The category is 'Memory'
Memory (61)
- All Manufacturers
- Ihs Manufacturer
- JESD-30 Code
- Memory Density
- Memory IC Type
- Memory Width
- Number of Terminals
- Number of Words
- Number of Words Code
- Operating Temperature-Max
- Organization
- Package Code
- Supply Current-Max
- Supply Current-Max:
0.035 mA
Image | Part Number | Manufacturer | Datasheet | Availability | Pricing(USD) | Quantity | RoHS | Factory Lead Time | Surface Mount | Material | Number of Terminals | Access Time-Max | Clock Frequency-Max (fCLK) | Ihs Manufacturer | Manufacturer | Manufacturer Package Code | Manufacturer Part Number | Moisture Sensitivity Levels | Number of Words | Number of Words Code | Operating Temperature-Max | Operating Temperature-Min | Package Body Material | Package Code | Package Description | Package Equivalence Code | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Reflow Temperature-Max (s) | Risk Rank | RoHS | Rohs Code | Supply Voltage-Nom (Vsup) | JESD-609 Code | Pbfree Code | ECCN Code | Type | Terminal Finish | Additional Feature | HTS Code | Subcategory | Technology | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Terminal Pitch | Reach Compliance Code | Time@Peak Reflow Temperature-Max (s) | Pin Count | JESD-30 Code | Qualification Status | Brand Name | Supply Voltage-Max (Vsup) | Power Supplies | Temperature Grade | Supply Voltage-Min (Vsup) | Operating Mode | Supply Current-Max | Organization | Output Characteristics | Seated Height-Max | Memory Width | Standby Current-Max | Memory Density | Screening Level | Parallel/Serial | I/O Type | Memory IC Type | Programming Voltage | Serial Bus Type | Endurance | Write Cycle Time-Max (tWC) | Write Protection | Standby Voltage-Min | Alternate Memory Width | Data Polling | Toggle Bit | Command User Interface | Output Enable | Number of Sectors/Size | Sector Size | Page Size | Cycle Time | Ready/Busy | Boot Block | Common Flash Interface | Reverse Pinout | Length | Width |
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 | Mfr Part No MT29F2G08AADWP:D | Micron | Datasheet | - | - | Min: 1 Mult: 1 | YES | 48 | 20 ns | MICRON TECHNOLOGY INC | Micron Technology Inc | MT29F2G08AADWP:D | 268435456 words | 256000000 | 70 °C | PLASTIC/EPOXY | TSOP1 | TSOP1, TSSOP48,.8,20 | TSSOP48,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | TSOP1 | 30 | 5.8 | Yes | 3.3 V | e3 | SLC NAND TYPE | Matte Tin (Sn) | Flash Memories | CMOS | DUAL | GULL WING | 260 | 1 | 0.5 mm | unknown | 48 | R-PDSO-G48 | Not Qualified | 3.6 V | 3/3.3 V | COMMERCIAL | 2.7 V | ASYNCHRONOUS | 0.035 mA | 256MX8 | 1.2 mm | 8 | 0.00005 A | 2147483648 bit | PARALLEL | FLASH | 3.3 V | NO | NO | YES | 2K | 128K | 2K words | YES | 18.4 mm | 12 mm | ||||||||||||||||||||||||||||
| Mfr Part No MBM29LV160BE90TN | Fujitsu | Datasheet | - | - | Min: 1 Mult: 1 | YES | 48 | 90 ns | FUJITSU LTD | FUJITSU Limited | MBM29LV160BE90TN | 1048576 words | 1000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TSOP1 | TSOP1, TSSOP48,.8,20 | TSSOP48,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | TSOP1 | 5.56 | No | 3 V | e0 | EAR99 | NOR TYPE | Tin/Lead (Sn/Pb) | 8542.32.00.51 | Flash Memories | CMOS | DUAL | GULL WING | 1 | 0.5 mm | unknown | 48 | R-PDSO-G48 | Not Qualified | 3.6 V | 3/3.3 V | INDUSTRIAL | 2.7 V | ASYNCHRONOUS | 0.035 mA | 1MX16 | 1.2 mm | 16 | 0.000005 A | 16777216 bit | PARALLEL | FLASH | 3 V | 8 | YES | YES | YES | 1,2,1,31 | 16K,8K,32K,64K | YES | BOTTOM | YES | 18.4 mm | 12 mm | |||||||||||||||||||||||||
| Mfr Part No MT45W4MW16BCGB-701IT | Micron | Datasheet | - | - | Min: 1 Mult: 1 | YES | 54 | 70 ns | MICRON TECHNOLOGY INC | Micron Technology Inc | MT45W4MW16BCGB-701IT | 4194304 words | 4000000 | 85 °C | -40 °C | PLASTIC/EPOXY | VFBGA | VFBGA, BGA54,6X9,30 | BGA54,6X9,30 | RECTANGULAR | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | Obsolete | BGA | 30 | 5.78 | Yes | 1.8 V | e1 | Yes | 3A991.B.2.A | Tin/Silver/Copper (Sn/Ag/Cu) | 8542.32.00.41 | Other Memory ICs | CMOS | BOTTOM | BALL | 260 | 1 | 0.75 mm | compliant | 54 | R-PBGA-B54 | Not Qualified | 1.95 V | 1.8,1.8/3 V | INDUSTRIAL | 1.7 V | SYNCHRONOUS | 0.035 mA | 4MX16 | 3-STATE | 1 mm | 16 | 0.00014 A | 67108864 bit | PARALLEL | COMMON | PSEUDO STATIC RAM | 8 mm | 6 mm | |||||||||||||||||||||||||||||||
| Mfr Part No IS62WV51216BLL-55TI | ISSI | Datasheet | 113 | - | Min: 1 Mult: 1 | 12 Weeks | YES | 44 | 55 ns | INTEGRATED SILICON SOLUTION INC | Integrated Silicon Solution Inc | IS62WV51216BLL-55TI | 3 | 524288 words | 512000 | 85 °C | -40 °C | PLASTIC/EPOXY | TSOP2 | PLASTIC, TSOP2-44 | TSOP44,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | TSOP2 | NOT SPECIFIED | 5.51 | No | 3 V | e0 | No | 3A991.B.2.A | Tin/Lead (Sn/Pb) | 8542.32.00.41 | SRAMs | CMOS | DUAL | GULL WING | NOT SPECIFIED | 1 | 0.8 mm | compliant | 44 | R-PDSO-G44 | Not Qualified | 3.6 V | 3/3.3 V | INDUSTRIAL | 2.5 V | ASYNCHRONOUS | 0.035 mA | 512KX16 | 3-STATE | 1.2 mm | 16 | 0.00002 A | 8 | PARALLEL | COMMON | STANDARD SRAM | 1.2 V | 18.415 mm | 10.16 mm | ||||||||||||||||||||||||||||
| Mfr Part No K6F1008V2C-YF55 | Samsung | Datasheet | - | - | Min: 1 Mult: 1 | YES | 32 | 55 ns | SAMSUNG SEMICONDUCTOR INC | Samsung Semiconductor | K6F1008V2C-YF55 | 131072 words | 128000 | 85 °C | -40 °C | PLASTIC/EPOXY | TSOP1 | TSOP1, TSSOP32,.56,20 | TSSOP32,.56,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | TSOP1 | NOT SPECIFIED | 5.83 | No | 3.3 V | e0 | EAR99 | Tin/Lead (Sn/Pb) | 8542.32.00.41 | SRAMs | CMOS | DUAL | GULL WING | NOT SPECIFIED | 1 | 0.5 mm | unknown | 32 | R-PDSO-G32 | Not Qualified | 3.6 V | 3.3 V | INDUSTRIAL | 3 V | ASYNCHRONOUS | 0.035 mA | 128KX8 | 3-STATE | 1.2 mm | 8 | 0.000001 A | 1048576 bit | PARALLEL | COMMON | STANDARD SRAM | 1.5 V | 11.8 mm | 8 mm | |||||||||||||||||||||||||||||||
| Mfr Part No JS29F04G08AANB1 | Intel | Datasheet | - | - | Min: 1 Mult: 1 | YES | 48 | 20 ns | INTEL CORP | Intel Corporation | JS29F04G08AANB1 | 524288 words | 512000 | 85 °C | -25 °C | PLASTIC/EPOXY | TSOP1 | TSOP1, TSSOP48,.8,20 | TSSOP48,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | TSOP | NOT SPECIFIED | 5.8 | Yes | 3 V | e3 | EAR99 | Matte Tin (Sn) | 8542.32.00.51 | Flash Memories | CMOS | DUAL | GULL WING | NOT SPECIFIED | 1 | 0.5 mm | compliant | 48 | R-PDSO-G48 | Not Qualified | 3.6 V | 3/3.3 V | COMMERCIAL EXTENDED | 2.7 V | SYNCHRONOUS | 0.035 mA | 512KX8 | 1.2 mm | 8 | 0.00005 A | 4194304 bit | PARALLEL | FLASH | 3.3 V | NO | NO | YES | 4K | 128K | 2K words | YES | 18.4 mm | 12 mm | ||||||||||||||||||||||||||
| Mfr Part No AT45DB041-TC | Atmel | Datasheet | - | - | Min: 1 Mult: 1 | YES | Aluminum | 28 | 5 MHz | ATMEL CORP | Atmel Corporation | AT45DB041-TC | 3 | 540672 words | 528000 | 70 °C | PLASTIC/EPOXY | TSOP1 | TSOP1, TSSOP28,.53,22 | TSSOP28,.53,22 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Transferred | TSOP | 30 | 8.48 | No | 2.7 V | e0 | No | EAR99 | Blind Threaded Inserts - MaxTite® | Tin/Lead (Sn/Pb) | HARDWARE DATA PROTECTION; SPI COMPATIBLE | 8542.32.00.51 | Flash Memories | CMOS | DUAL | GULL WING | 240 | 1 | 0.55 mm | compliant | 28 | R-PDSO-G28 | Not Qualified | 3.6 V | 3/3.3 V | COMMERCIAL | 2.7 V | SYNCHRONOUS | 0.035 mA | 528KX8 | 1.2 mm | 8 | 0.00002 A | 4325376 bit | SERIAL | FLASH | 2.7 V | SPI | HARDWARE | 11.8 mm | 8 mm | |||||||||||||||||||||||||||
| Mfr Part No CAT28C16AKI-20 | Emerson | Datasheet | - | - | Min: 1 Mult: 1 | YES | 24 | 200 ns | CATALYST SEMICONDUCTOR INC | Catalyst Semiconductor | CAT28C16AKI-20 | 1 | 2048 words | 2000 | 85 °C | -40 °C | PLASTIC/EPOXY | SOP | SOP, SOP24,.45 | SOP24,.45 | RECTANGULAR | SMALL OUTLINE | Transferred | SOIC | 30 | 5.08 | Yes | No | 5 V | e0 | EAR99 | Tin/Lead (Sn/Pb) | AUTOMATIC WRITE | 8542.32.00.51 | EEPROMs | CMOS | DUAL | GULL WING | 240 | 1 | 1.27 mm | unknown | 24 | R-PDSO-G24 | Not Qualified | 5.5 V | 5 V | INDUSTRIAL | 4.5 V | ASYNCHRONOUS | 0.035 mA | 2KX8 | 2.65 mm | 8 | 0.0001 A | 16384 bit | PARALLEL | EEPROM | 5 V | 10000 Write/Erase Cycles | 10 ms | YES | NO | NO | 15.4 mm | 7.5 mm | |||||||||||||||||||||||||
| Mfr Part No FM27C256VE120 | ON Semiconductor | Datasheet | - | - | Min: 1 Mult: 1 | YES | 32 | 120 ns | FAIRCHILD SEMICONDUCTOR CORP | Fairchild Semiconductor Corporation | FM27C256VE120 | 32768 words | 32000 | 85 °C | -40 °C | PLASTIC/EPOXY | QCCJ | QCCJ, LDCC32,.5X.6 | LDCC32,.5X.6 | RECTANGULAR | CHIP CARRIER | Obsolete | QFJ | 5.17 | No | 5 V | e0 | EAR99 | Tin/Lead (Sn/Pb) | 8542.32.00.71 | OTP ROMs | CMOS | QUAD | J BEND | 1 | 1.27 mm | unknown | 32 | R-PQCC-J32 | Not Qualified | 5.5 V | 5 V | INDUSTRIAL | 4.5 V | ASYNCHRONOUS | 0.035 mA | 32KX8 | 3-STATE | 3.56 mm | 8 | 0.0001 A | 262144 bit | PARALLEL | COMMON | OTP ROM | 12.75 V | 13.995 mm | 11.455 mm | |||||||||||||||||||||||||||||||||
| Mfr Part No GT28F160B3B90 | Intel | Datasheet | - | - | Min: 1 Mult: 1 | YES | 48 | 90 ns | INTEL CORP | Intel Corporation | GT28F160B3B90 | 1048576 words | 1000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TBGA | CSP, MICRO, BGA-48 | BGA46,6X8,30 | RECTANGULAR | GRID ARRAY, THIN PROFILE | Transferred | BGA | 30 | 8.5 | No | 3 V | EAR99 | NOR TYPE | USER-SELECTABLE 12V VPP; BOTTOM BOOT BLOCK | 8542.32.00.51 | Flash Memories | MOS | BOTTOM | BALL | 240 | 1 | 1 mm | compliant | 48 | R-PBGA-B48 | Not Qualified | 3.6 V | 1.8/3.6,3/3.3 V | INDUSTRIAL | 2.7 V | ASYNCHRONOUS | 0.035 mA | 1MX16 | 1.2 mm | 16 | 0.000005 A | 16777216 bit | PARALLEL | FLASH | 2.7 V | NO | NO | YES | 8,31 | 4K,32K | BOTTOM | 13 mm | 10 mm | |||||||||||||||||||||||||||
| Mfr Part No LP62S16128BV-55LLMF | AMIC Technology | Datasheet | - | - | Min: 1 Mult: 1 | YES | 44 | 55 ns | AMIC TECHNOLOGY CORP | AMIC Technology | LP62S16128BV-55LLMF | 131072 words | 128000 | 105 °C | -40 °C | PLASTIC/EPOXY | TSOP2 | TSOP2, TSOP44,.46,32 | TSOP44,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Contact Manufacturer | 5.8 | Yes | 3 V | SRAMs | CMOS | DUAL | GULL WING | 1 | 0.8 mm | unknown | R-PDSO-G44 | Not Qualified | 3.6 V | 3/3.3 V | INDUSTRIAL | 2.7 V | ASYNCHRONOUS | 0.035 mA | 128KX16 | 3-STATE | 1.2 mm | 16 | 0.000003 A | 2097152 bit | PARALLEL | COMMON | STANDARD SRAM | 2 V | YES | 18.41 mm | 10.16 mm | ||||||||||||||||||||||||||||||||||||||
| Mfr Part No K9K8G08U0A-PCB00 | Samsung | Datasheet | - | - | Min: 1 Mult: 1 | YES | 48 | 20 ns | SAMSUNG SEMICONDUCTOR INC | Samsung Semiconductor | K9K8G08U0A-PCB00 | 3 | 1073741824 words | 1000000000 | 70 °C | PLASTIC/EPOXY | TSSOP | TSSOP, TSSOP48,.8,20 | TSSOP48,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | Obsolete | TSOP1 | NOT SPECIFIED | 5.75 | Yes | 3.3 V | e6 | 3A991.B.1.A | Tin/Bismuth (Sn97Bi3) | CONTAINS ADDITIONAL 256M BIT SPARE MEMORY | 8542.32.00.51 | Flash Memories | CMOS | DUAL | GULL WING | 260 | 1 | 0.5 mm | unknown | 48 | R-PDSO-G48 | Not Qualified | 3.6 V | 3/3.3 V | COMMERCIAL | 2.7 V | ASYNCHRONOUS | 0.035 mA | 1GX8 | 1.2 mm | 8 | 0.0001 A | 8589934592 bit | PARALLEL | FLASH | 2.7 V | NO | NO | YES | 8K | 128K | 2K words | YES | 18.4 mm | 12 mm | |||||||||||||||||||||||||
| Mfr Part No HY62V8100BLLG-85 | SK Hynix Inc | Datasheet | - | - | Min: 1 Mult: 1 | YES | 32 | 85 ns | SK HYNIX INC | 131072 words | 128000 | 70 °C | PLASTIC/EPOXY | SOP | 0.525 INCH, SOP-32 | SOP32,.56 | RECTANGULAR | SMALL OUTLINE | Obsolete | SOIC | No | 3.3 V | EAR99 | 8542.32.00.41 | DUAL | GULL WING | 1 | 1.27 mm | unknown | 32 | R-PDSO-G32 | Not Qualified | 3.6 V | COMMERCIAL | 3 V | ASYNCHRONOUS | 0.035 mA | 128KX8 | 3-STATE | 3.048 mm | 8 | 0.00001 A | 1048576 bit | PARALLEL | COMMON | STANDARD SRAM | 2 V | 20.498 mm | 11.2015 mm | ||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No IS65C256AL-25TA3 | Integrated Silicon Solution Inc | Datasheet | - | - | Min: 1 Mult: 1 | YES | 28 | 25 ns | INTEGRATED SILICON SOLUTION INC | 3 | 32768 words | 32000 | 125 °C | -40 °C | PLASTIC/EPOXY | TSOP1 | PLASTIC, TSOP1-28 | TSSOP28,.53,22 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | TSOP | No | 5 V | e0 | No | EAR99 | TIN LEAD | 8542.32.00.41 | DUAL | GULL WING | 1 | 0.55 mm | compliant | 28 | R-PDSO-G28 | Not Qualified | 5.5 V | AUTOMOTIVE | 4.5 V | ASYNCHRONOUS | 0.035 mA | 32KX8 | 3-STATE | 1.2 mm | 8 | 0.00005 A | 262144 bit | AEC-Q100 | PARALLEL | COMMON | STANDARD SRAM | 2 V | 11.8 mm | 8 mm | ||||||||||||||||||||||||||||||||||||
| Mfr Part No K6T0808V1D-RD70 | Samsung Semiconductor | Datasheet | - | - | Min: 1 Mult: 1 | YES | 28 | 70 ns | SAMSUNG SEMICONDUCTOR INC | 32768 words | 32000 | 85 °C | -25 °C | PLASTIC/EPOXY | TSOP1-R | TSOP1-R, TSSOP28,.53,22 | TSSOP28,.53,22 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | TSOP | No | 3.3 V | e0 | EAR99 | TIN LEAD | 8542.32.00.41 | DUAL | GULL WING | 1 | 0.55 mm | compliant | 28 | R-PDSO-G28 | Not Qualified | 3.6 V | OTHER | 3 V | ASYNCHRONOUS | 0.035 mA | 32KX8 | 3-STATE | 1.2 mm | 8 | 262144 bit | PARALLEL | COMMON | STANDARD SRAM | 2 V | YES | 11.8 mm | 8 mm | |||||||||||||||||||||||||||||||||||||||
 | Mfr Part No IS62LV1288LL-45Q | Integrated Silicon Solution Inc | Datasheet | - | - | Min: 1 Mult: 1 | YES | 32 | 45 ns | INTEGRATED SILICON SOLUTION INC | 131072 words | 128000 | 70 °C | PLASTIC/EPOXY | SOP | 0.450 INCH, PLASTIC, SOP-32 | SOP32,.56 | RECTANGULAR | SMALL OUTLINE | Obsolete | SOIC | No | 3 V | e0 | EAR99 | TIN LEAD | 8542.32.00.41 | DUAL | GULL WING | 1 | 1.27 mm | unknown | 32 | R-PDSO-G32 | Not Qualified | 3.15 V | COMMERCIAL | 2.85 V | ASYNCHRONOUS | 0.035 mA | 128KX8 | 3-STATE | 3 mm | 8 | 0.000008 A | 1048576 bit | PARALLEL | COMMON | STANDARD SRAM | 2 V | 20.4285 mm | 11.303 mm | ||||||||||||||||||||||||||||||||||||||||
| Mfr Part No R1LP5256ESA-5SI | Renesas Electronics Corporation | Datasheet | - | - | Min: 1 Mult: 1 | YES | 28 | 55 ns | RENESAS ELECTRONICS CORP | 2 | 32768 words | 32000 | 85 °C | -40 °C | PLASTIC/EPOXY | SOP | SOP, TSSOP28,.53,22 | TSSOP28,.53,22 | RECTANGULAR | SMALL OUTLINE | Active | Yes | 5 V | e2 | Yes | 3A991 | TIN COPPER | 8542.32.00.41 | DUAL | GULL WING | 260 | 1 | 0.55 mm | compliant | 20 | R-PDSO-G28 | Not Qualified | 5.5 V | INDUSTRIAL | 4.5 V | ASYNCHRONOUS | 0.035 mA | 32KX8 | 3-STATE | 8 | 0.000002 A | 262144 bit | PARALLEL | COMMON | STANDARD SRAM | 4.5 V | ||||||||||||||||||||||||||||||||||||||||
 | Mfr Part No R1LV0816ASA-5SI | Renesas Electronics Corporation | Datasheet | - | - | Min: 1 Mult: 1 | YES | 48 | 70 ns | RENESAS ELECTRONICS CORP | 524288 words | 512000 | 85 °C | -40 °C | PLASTIC/EPOXY | SOP | SOP, TSSOP48,.8,20 | TSSOP48,.8,20 | RECTANGULAR | SMALL OUTLINE | Obsolete | TSOP1 | 3 V | EAR99 | 8542.32.00.41 | DUAL | GULL WING | 1 | 0.5 mm | compliant | 48 | R-PDSO-G48 | Not Qualified | 3.6 V | INDUSTRIAL | 2.4 V | ASYNCHRONOUS | 0.035 mA | 512KX16 | 3-STATE | 16 | 0.000004 A | 8388608 bit | PARALLEL | COMMON | STANDARD SRAM | 1.5 V | 8 | ||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No UPD43256AGU-15LL | Renesas Electronics Corporation | Datasheet | - | - | Min: 1 Mult: 1 | YES | 28 | 150 ns | RENESAS ELECTRONICS CORP | 32768 words | 32000 | 70 °C | PLASTIC/EPOXY | SOP | SOP28,.5 | RECTANGULAR | SMALL OUTLINE | Obsolete | SOIC | No | 5 V | e0 | No | EAR99 | Tin/Lead (Sn/Pb) | 8542.32.00.41 | DUAL | GULL WING | 1.27 mm | unknown | 28 | R-PDSO-G28 | Not Qualified | COMMERCIAL | ASYNCHRONOUS | 0.035 mA | 32KX8 | 3-STATE | 8 | 0.00002 A | 262144 bit | PARALLEL | COMMON | STANDARD SRAM | 2 V | ||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No 72421L15PFI | Renesas | Datasheet | - | - | Min: 1 Mult: 1 | YES | 32 | 10 ns | 66.7 MHz | INTEGRATED DEVICE TECHNOLOGY INC | Integrated Device Technology Inc | PR32 | 72421L15PFI | 3 | 64 words | 64 | 85 °C | -40 °C | PLASTIC/EPOXY | LQFP | TQFP-32 | QFP32,.35SQ,32 | SQUARE | FLATPACK, LOW PROFILE | Obsolete | TQFP | NOT SPECIFIED | 5.21 | Non-Compliant | No | 5 V | e0 | No | EAR99 | Tin/Lead (Sn85Pb15) | 8542.32.00.71 | FIFOs | CMOS | QUAD | GULL WING | 240 | 1 | 0.8 mm | not_compliant | 32 | S-PQFP-G32 | Not Qualified | Integrated Device Technology | 5.5 V | 5 V | INDUSTRIAL | 4.5 V | SYNCHRONOUS | 0.035 mA | 64X9 | 1.6 mm | 9 | 0.005 A | 576 bit | PARALLEL | OTHER FIFO | YES | 15 ns | 7 mm | 7 mm |
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MT29F2G08AADWP:D
Micron
Package:Memory
Price: please inquire
-
MBM29LV160BE90TN
Fujitsu
Package:Memory
Price: please inquire
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MT45W4MW16BCGB-701IT
Micron
Package:Memory
Price: please inquire
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IS62WV51216BLL-55TI
ISSI
Package:Memory
Price: please inquire
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K6F1008V2C-YF55
Samsung
Package:Memory
Price: please inquire
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JS29F04G08AANB1
Intel
Package:Memory
Price: please inquire
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AT45DB041-TC
Atmel
Package:Memory
Price: please inquire
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CAT28C16AKI-20
Emerson
Package:Memory
Price: please inquire
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FM27C256VE120
ON Semiconductor
Package:Memory
Price: please inquire
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GT28F160B3B90
Intel
Package:Memory
Price: please inquire
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LP62S16128BV-55LLMF
AMIC Technology
Package:Memory
Price: please inquire
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K9K8G08U0A-PCB00
Samsung
Package:Memory
Price: please inquire
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HY62V8100BLLG-85
SK Hynix Inc
Package:Memory
Price: please inquire
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IS65C256AL-25TA3
Integrated Silicon Solution Inc
Package:Memory
Price: please inquire
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K6T0808V1D-RD70
Samsung Semiconductor
Package:Memory
Price: please inquire
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IS62LV1288LL-45Q
Integrated Silicon Solution Inc
Package:Memory
Price: please inquire
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R1LP5256ESA-5SI
Renesas Electronics Corporation
Package:Memory
Price: please inquire
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R1LV0816ASA-5SI
Renesas Electronics Corporation
Package:Memory
Price: please inquire
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UPD43256AGU-15LL
Renesas Electronics Corporation
Package:Memory
Price: please inquire
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72421L15PFI
Renesas
Package:Memory
Price: please inquire