The category is 'Memory'
Memory (144)
- All Manufacturers
- Ihs Manufacturer
- JESD-30 Code
- Memory Density
- Memory IC Type
- Memory Width
- Number of Terminals
- Number of Words
- Number of Words Code
- Operating Temperature-Max
- Organization
- Package Code
- Supply Current-Max
- Supply Current-Max:
0.05 mA
Image | Part Number | Manufacturer | Datasheet | Availability | Pricing(USD) | Quantity | RoHS | Factory Lead Time | Lifecycle Status | Mount | Surface Mount | Number of Pins | Number of Terminals | Access Time-Max | Clock Frequency-Max (fCLK) | Ihs Manufacturer | Manufacturer | Manufacturer Part Number | Memory Types | Moisture Sensitivity Levels | Number of Words | Number of Words Code | Operating Temperature-Max | Operating Temperature-Min | Package Body Material | Package Code | Package Description | Package Equivalence Code | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Reflow Temperature-Max (s) | Risk Rank | RoHS | Rohs Code | Supply Voltage-Nom (Vsup) | Usage Level | JESD-609 Code | Pbfree Code | ECCN Code | Type | Terminal Finish | Max Operating Temperature | Min Operating Temperature | Additional Feature | HTS Code | Subcategory | Technology | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Terminal Pitch | Reach Compliance Code | Pin Count | JESD-30 Code | Qualification Status | Operating Supply Voltage | Supply Voltage-Max (Vsup) | Power Supplies | Temperature Grade | Supply Voltage-Min (Vsup) | Interface | Max Supply Voltage | Min Supply Voltage | Memory Size | Number of Ports | Operating Mode | Supply Current-Max | Access Time | Data Bus Width | Organization | Output Characteristics | Seated Height-Max | Memory Width | Address Bus Width | Density | Standby Current-Max | Memory Density | Max Frequency | Screening Level | Parallel/Serial | I/O Type | Sync/Async | Word Size | Memory IC Type | Programming Voltage | Endurance | Write Cycle Time-Max (tWC) | Standby Voltage-Min | Data Polling | Toggle Bit | Command User Interface | Output Enable | Number of Sectors/Size | Sector Size | Page Size | Ready/Busy | Boot Block | Refresh Cycles | Sequential Burst Length | Interleaved Burst Length | Access Mode | Nominal Supply Voltage (DC) | Total Dose | Self Refresh | Length | Width |
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![]() | Mfr Part No AT28C256E-20TI | Atmel | Datasheet | 16000 | - | Min: 1 Mult: 1 | YES | 28 | 200 ns | ATMEL CORP | Atmel Corporation | AT28C256E-20TI | 3 | 32768 words | 32000 | 85 °C | -40 °C | PLASTIC/EPOXY | TSOP1 | TSOP1, TSSOP28,.53,22 | TSSOP28,.53,22 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | TSOP1 | 30 | 8.59 | No | 5 V | Military grade | e0 | No | EAR99 | Tin/Lead (Sn/Pb) | AUTOMATIC WRITE | 8542.32.00.51 | EEPROMs | CMOS | DUAL | GULL WING | 240 | 1 | 0.55 mm | compliant | 28 | R-PDSO-G28 | Not Qualified | 5.5 V | 5 V | INDUSTRIAL | 4.5 V | ASYNCHRONOUS | 0.05 mA | 32KX8 | 3-STATE | 1.2 mm | 8 | 0.0002 A | 262144 bit | MIL-STD-883 | PARALLEL | EEPROM | 5 V | 100000 Write/Erase Cycles | 10 ms | YES | YES | NO | 64 words | 11.8 mm | 8 mm | ||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No CAT28C513GI-12 | ON Semiconductor | Datasheet | - | - | Min: 1 Mult: 1 | YES | 32 | 120 ns | ON SEMICONDUCTOR | ON Semiconductor | CAT28C513GI-12 | 3 | 65536 words | 64000 | 85 °C | -40 °C | PLASTIC/EPOXY | QCCJ | LEAD AND HALOGEN FREE, PLASTIC, LCC-32 | LDCC32,.5X.6 | RECTANGULAR | CHIP CARRIER | Obsolete | QFJ | 40 | 5.68 | Yes | 5 V | e3 | MATTE TIN | EEPROMs | CMOS | QUAD | J BEND | 260 | 1 | 1.27 mm | compliant | 32 | R-PQCC-J32 | Not Qualified | 5.5 V | 5 V | INDUSTRIAL | 4.5 V | ASYNCHRONOUS | 0.05 mA | 64KX8 | 3.55 mm | 8 | 0.0002 A | 524288 bit | PARALLEL | EEPROM | 5 V | 100000 Write/Erase Cycles | 5 ms | YES | YES | NO | 128 words | 13.97 mm | 11.43 mm | |||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No AT28C256E-20JC | Atmel | Datasheet | 1200 | - | Min: 1 Mult: 1 | YES | 32 | 200 ns | ATMEL CORP | Atmel Corporation | AT28C256E-20JC | 2 | 32768 words | 32000 | 70 °C | PLASTIC/EPOXY | QCCJ | QCCJ, LDCC32,.5X.6 | LDCC32,.5X.6 | RECTANGULAR | CHIP CARRIER | Obsolete | QFJ | 30 | 5.7 | No | 5 V | Military grade | e0 | EAR99 | Tin/Lead (Sn/Pb) | AUTOMATIC WRITE | 8542.32.00.51 | EEPROMs | CMOS | QUAD | J BEND | 225 | 1 | 1.27 mm | compliant | 32 | R-PQCC-J32 | Not Qualified | 5.5 V | 5 V | COMMERCIAL | 4.5 V | ASYNCHRONOUS | 0.05 mA | 32KX8 | 3-STATE | 3.556 mm | 8 | 0.0002 A | 262144 bit | MIL-STD-883 | PARALLEL | EEPROM | 5 V | 100000 Write/Erase Cycles | 10 ms | YES | YES | NO | 64 words | 13.97 mm | 11.43 mm | ||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No MT29F32G08CBABAWP:B | Micron | Datasheet | 582 | - | Min: 1 Mult: 1 | Obsolete (Last Updated: 2 years ago) | Surface Mount | YES | 48 | 48 | 20 ns | MICRON TECHNOLOGY INC | Micron Technology Inc | MT29F32G08CBABAWP:B | NAND | 4294967296 words | 4000000000 | 70 °C | PLASTIC/EPOXY | TSSOP | TSSOP48,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | Obsolete | 8.6 | Compliant | Yes | MLC NAND TYPE | 70 °C | 0 °C | Flash Memories | CMOS | DUAL | GULL WING | 0.5 mm | unknown | R-PDSO-G48 | Not Qualified | 3.3 V | 3/3.3 V | COMMERCIAL | Parallel, Serial | 3.6 V | 2.7 V | 3.7 GB | 0.05 mA | 4GX8 | 8 | 22 b | 32 Gb | 0.00005 A | 34359738368 bit | PARALLEL | Asynchronous | 8 b | FLASH | NO | NO | YES | 4K | 1M | 4K words | YES | 3.3 V | ||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No AT28C256E-25JC | Atmel | Datasheet | 641 | - | Min: 1 Mult: 1 | YES | 32 | 250 ns | ATMEL CORP | Atmel Corporation | AT28C256E-25JC | 2 | 32768 words | 32000 | 70 °C | PLASTIC/EPOXY | QCCJ | QCCJ, LDCC32,.5X.6 | LDCC32,.5X.6 | RECTANGULAR | CHIP CARRIER | Obsolete | QFJ | 30 | 8.6 | No | 5 V | Military grade | e0 | EAR99 | Tin/Lead (Sn/Pb) | AUTOMATIC WRITE | 8542.32.00.51 | EEPROMs | CMOS | QUAD | J BEND | 225 | 1 | 1.27 mm | compliant | 32 | R-PQCC-J32 | Not Qualified | 5.5 V | 5 V | COMMERCIAL | 4.5 V | ASYNCHRONOUS | 0.05 mA | 32KX8 | 3-STATE | 3.556 mm | 8 | 0.0002 A | 262144 bit | MIL-STD-883 | PARALLEL | EEPROM | 5 V | 100000 Write/Erase Cycles | 10 ms | YES | YES | NO | 64 words | 13.97 mm | 11.43 mm | ||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No CY62256L-70SNI | Cypress Semiconductor | Datasheet | 16071 | - | Min: 1 Mult: 1 | YES | 28 | 70 ns | CYPRESS SEMICONDUCTOR CORP | Cypress Semiconductor | CY62256L-70SNI | 1 | 32768 words | 32000 | 85 °C | -40 °C | PLASTIC/EPOXY | SOP | 0.300 INCH, SOIC-28 | SOP28,.5 | RECTANGULAR | SMALL OUTLINE | Obsolete | SOIC | 30 | 5.11 | No | 5 V | e0 | EAR99 | Tin/Lead (Sn/Pb) | 8542.32.00.41 | SRAMs | CMOS | DUAL | GULL WING | 225 | 1 | 1.27 mm | not_compliant | 28 | R-PDSO-G28 | Not Qualified | 5.5 V | 5 V | INDUSTRIAL | 4.5 V | 1 | ASYNCHRONOUS | 0.05 mA | 32KX8 | 3-STATE | 2.794 mm | 8 | 0.00005 A | 262144 bit | PARALLEL | COMMON | STANDARD SRAM | 2 V | YES | 17.9324 mm | 7.5057 mm | |||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No AT49BV512-12JI | Atmel | Datasheet | 144 | - | Min: 1 Mult: 1 | YES | 32 | 120 ns | ATMEL CORP | Atmel Corporation | AT49BV512-12JI | 2 | 65536 words | 64000 | 85 °C | -40 °C | PLASTIC/EPOXY | QCCJ | QCCJ, LDCC32,.5X.6 | LDCC32,.5X.6 | RECTANGULAR | CHIP CARRIER | Obsolete | QFJ | 30 | 5.82 | No | 3 V | e0 | EAR99 | NOR TYPE | Tin/Lead (Sn/Pb) | HARDWARE DATA PROTECTION | 8542.32.00.51 | Flash Memories | CMOS | QUAD | J BEND | 225 | 1 | 1.27 mm | compliant | 32 | R-PQCC-J32 | Not Qualified | 3.6 V | 3/3.3 V | INDUSTRIAL | 2.7 V | ASYNCHRONOUS | 0.05 mA | 64KX8 | 3.56 mm | 8 | 0.00005 A | 524288 bit | PARALLEL | FLASH | 2.7 V | YES | YES | YES | 1,1 | 8K,56K | BOTTOM | 13.97 mm | 11.43 mm | |||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No AT28C256E-20JI | Atmel | Datasheet | 2433 | - | Min: 1 Mult: 1 | YES | 32 | 200 ns | ATMEL CORP | Atmel Corporation | AT28C256E-20JI | 2 | 32768 words | 32000 | 85 °C | -40 °C | PLASTIC/EPOXY | QCCJ | QCCJ, LDCC32,.5X.6 | LDCC32,.5X.6 | RECTANGULAR | CHIP CARRIER | Obsolete | QFJ | 30 | 5.74 | No | 5 V | Military grade | e0 | EAR99 | Tin/Lead (Sn/Pb) | AUTOMATIC WRITE | 8542.32.00.51 | EEPROMs | CMOS | QUAD | J BEND | 225 | 1 | 1.27 mm | unknown | 32 | R-PQCC-J32 | Not Qualified | 5.5 V | 5 V | INDUSTRIAL | 4.5 V | ASYNCHRONOUS | 0.05 mA | 32KX8 | 3-STATE | 3.556 mm | 8 | 0.0002 A | 262144 bit | MIL-STD-883 | PARALLEL | EEPROM | 5 V | 100000 Write/Erase Cycles | 10 ms | YES | YES | NO | 64 words | 13.97 mm | 11.43 mm | |||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No E28F016SC-120 | Intel | Datasheet | - | - | Min: 1 Mult: 1 | YES | 40 | 120 ns | INTEL CORP | Intel Corporation | E28F016SC-120 | 2097152 words | 2000000 | 70 °C | PLASTIC/EPOXY | TSOP1 | TSOP1, TSSOP40,.8,20 | TSSOP40,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | TSOP | NOT SPECIFIED | 5.86 | No | 3.3 V | e0 | EAR99 | NOR TYPE | Tin/Lead (Sn/Pb) | ALSO CAN BE OPERATED IN 4.5V TO 5.5V | 8542.32.00.51 | Flash Memories | MOS | DUAL | GULL WING | NOT SPECIFIED | 1 | 0.5 mm | unknown | 40 | R-PDSO-G40 | Not Qualified | 3.6 V | 3/5 V | COMMERCIAL | 3 V | ASYNCHRONOUS | 0.05 mA | 2MX8 | 3-STATE | 1.2 mm | 8 | 0.00001 A | 16777216 bit | PARALLEL | FLASH | 3.3 V | NO | NO | YES | 32 | 64K | YES | 18.4 mm | 10 mm | ||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No MX28F1000PC-15 | Macronix | Datasheet | 7198 | - | Min: 1 Mult: 1 | NO | 32 | 150 ns | MACRONIX INTERNATIONAL CO LTD | Macronix International Co Ltd | MX28F1000PC-15 | 131072 words | 128000 | 70 °C | PLASTIC/EPOXY | DIP | DIP, DIP32,.6 | DIP32,.6 | RECTANGULAR | IN-LINE | Obsolete | DIP | NOT SPECIFIED | 5.51 | Non-Compliant | No | 5 V | e0 | No | EAR99 | NOR TYPE | Tin/Lead (Sn/Pb) | AUTOMATIC WRITE | 8542.32.00.51 | Flash Memories | CMOS | DUAL | THROUGH-HOLE | NOT SPECIFIED | 1 | 2.54 mm | unknown | 32 | R-PDIP-T32 | Not Qualified | 5.5 V | 5 V | COMMERCIAL | 4.5 V | ASYNCHRONOUS | 0.05 mA | 128KX8 | 3-STATE | 5.33 mm | 8 | 0.0001 A | 1048576 bit | PARALLEL | FLASH | 12 V | YES | YES | YES | 8 | 16K | 41.91 mm | 15.24 mm | |||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No MX29F002BQC-70 | Macronix | Datasheet | - | - | Min: 1 Mult: 1 | YES | 32 | 70 ns | MACRONIX INTERNATIONAL CO LTD | Macronix International Co Ltd | MX29F002BQC-70 | 262144 words | 256000 | 70 °C | PLASTIC/EPOXY | QCCJ | QCCJ, LDCC32,.5X.6 | LDCC32,.5X.6 | RECTANGULAR | CHIP CARRIER | Obsolete | LCC | NOT SPECIFIED | 7.9 | No | 5 V | e0 | EAR99 | NOR TYPE | Tin/Lead (Sn/Pb) | 8542.32.00.51 | Flash Memories | CMOS | QUAD | J BEND | NOT SPECIFIED | 1 | 1.27 mm | unknown | 32 | R-PQCC-J32 | Not Qualified | 5.5 V | 5 V | COMMERCIAL | 4.5 V | ASYNCHRONOUS | 0.05 mA | 256KX8 | 3.55 mm | 8 | 0.000005 A | 2097152 bit | PARALLEL | FLASH | 5 V | 100000 Write/Erase Cycles | YES | YES | YES | 1,2,1,3 | 16K,8K,32K,64K | BOTTOM | 14.05 mm | 11.43 mm | |||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No 79C0408RPFE-12 | Maxwell Technologies | Datasheet | - | - | Min: 1 Mult: 1 | YES | 40 | 120 ns | MAXWELL TECHNOLOGIES INC | Maxwell Technologies | 79C0408RPFE-12 | 524288 words | 512000 | 125 °C | -55 °C | UNSPECIFIED | DFP | DFP, FL40,1,40 | FL40,1,40 | RECTANGULAR | FLATPACK | Transferred | DFP | 7.51 | 5 V | 3A001.A.2.C | 8542.32.00.51 | EEPROMs | CMOS | DUAL | FLAT | 1 | 1.016 mm | compliant | 40 | R-XDFP-F40 | Not Qualified | 5.5 V | 5 V | MILITARY | 4.5 V | ASYNCHRONOUS | 0.05 mA | 512KX8 | 7.62 mm | 8 | 0.00008 A | 4194304 bit | PARALLEL | EEPROM MODULE | 5 V | 10 ms | YES | YES | 128 words | YES | 100k Rad(Si) V | 25.273 mm | 21.59 mm | |||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No IS42VS16100E-10TLI | ISSI | Datasheet | - | - | Min: 1 Mult: 1 | 14 Weeks | YES | 50 | 7 ns | 100 MHz | INTEGRATED SILICON SOLUTION INC | Integrated Silicon Solution Inc | IS42VS16100E-10TLI | 3 | 1048576 words | 1000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TSOP2 | TSOP2, TSOP50,.46,32 | TSOP50,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Active | TSOP2 | 10 | 5.36 | Yes | Yes | 1.8 V | e3 | Yes | EAR99 | Matte Tin (Sn) - annealed | 85 °C | -40 °C | AUTO/SELF REFRESH | 8542.32.00.02 | DRAMs | CMOS | DUAL | GULL WING | 260 | 1 | 0.8 mm | compliant | 50 | R-PDSO-G50 | Not Qualified | 1.9 V | 1.8 V | INDUSTRIAL | 1.7 V | 1.9 V | 1.7 V | 2 MB | 1 | SYNCHRONOUS | 0.05 mA | 7 ns | 16 b | 1MX16 | 3-STATE | 1.2 mm | 16 | 0.00001 A | 16777216 bit | 100 MHz | COMMON | SYNCHRONOUS DRAM | 2048 | 1,2,4,8,FP | 1,2,4,8 | DUAL BANK PAGE BURST | YES | 20.95 mm | 10.16 mm | ||||||||||||||||||||||||||||||
![]() | Mfr Part No AT28C256-20SC | Microchip | Datasheet | - | - | Min: 1 Mult: 1 | YES | 28 | 200 ns | ATMEL CORP | AT28C256-20SC | 2 | 32768 words | 32000 | 70 °C | PLASTIC/EPOXY | SOP | SOP, SOP28,.4 | SOP28,.4 | RECTANGULAR | SMALL OUTLINE | Obsolete | SOIC | 30 | 5.7 | No | 5 V | Military grade | e0 | No | EAR99 | Tin/Lead (Sn/Pb) | AUTOMATIC WRITE | 8542.32.00.51 | DUAL | GULL WING | 240 | 1 | 1.27 mm | compliant | 28 | R-PDSO-G28 | Not Qualified | 5.5 V | 5 V | COMMERCIAL | 4.5 V | ASYNCHRONOUS | 0.05 mA | 32KX8 | 3-STATE | 2.65 mm | 8 | 0.0002 A | 262144 bit | MIL-STD-883 | PARALLEL | EEPROM | 5 V | 10000 Write/Erase Cycles | 10 ms | YES | YES | NO | 64 words | 17.9 mm | 7.5 mm | ||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No AT28C256E-20SI | Microchip | Datasheet | - | - | Min: 1 Mult: 1 | YES | 28 | 200 ns | ATMEL CORP | AT28C256E-20SI | 2 | 32768 words | 32000 | 85 °C | -40 °C | PLASTIC/EPOXY | SOP | SOP, SOP28,.4 | SOP28,.4 | RECTANGULAR | SMALL OUTLINE | Obsolete | SOIC | 30 | 5.74 | No | 5 V | Military grade | e0 | No | EAR99 | Tin/Lead (Sn/Pb) | AUTOMATIC WRITE | 8542.32.00.51 | DUAL | GULL WING | 240 | 1 | 1.27 mm | compliant | 28 | R-PDSO-G28 | Not Qualified | 5.5 V | 5 V | INDUSTRIAL | 4.5 V | ASYNCHRONOUS | 0.05 mA | 32KX8 | 3-STATE | 2.65 mm | 8 | 0.0002 A | 262144 bit | MIL-STD-883 | PARALLEL | EEPROM | 5 V | 100000 Write/Erase Cycles | 10 ms | YES | YES | NO | 64 words | 17.9 mm | 7.5 mm | |||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No AT28C256-20SI | Microchip | Datasheet | - | - | Min: 1 Mult: 1 | YES | 28 | 200 ns | ATMEL CORP | AT28C256-20SI | 2 | 32768 words | 32000 | 85 °C | -40 °C | PLASTIC/EPOXY | SOP | SOP, SOP28,.4 | SOP28,.4 | RECTANGULAR | SMALL OUTLINE | Obsolete | SOIC | 30 | 5.72 | No | 5 V | Military grade | e0 | No | EAR99 | Tin/Lead (Sn/Pb) | AUTOMATIC WRITE | 8542.32.00.51 | DUAL | GULL WING | 240 | 1 | 1.27 mm | compliant | 28 | R-PDSO-G28 | Not Qualified | 5.5 V | 5 V | INDUSTRIAL | 4.5 V | ASYNCHRONOUS | 0.05 mA | 32KX8 | 3-STATE | 2.65 mm | 8 | 0.0002 A | 262144 bit | MIL-STD-883 | PARALLEL | EEPROM | 5 V | 10000 Write/Erase Cycles | 10 ms | YES | YES | NO | 64 words | 17.9 mm | 7.5 mm | |||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No CY7C187-45LC | Cypress Semiconductor | Datasheet | - | - | Min: 1 Mult: 1 | YES | 22 | 45 ns | CYPRESS SEMICONDUCTOR CORP | 65536 words | 64000 | 70 °C | CERAMIC, METAL-SEALED COFIRED | QCCN | QCCN, LCC22,.3X.5 | LCC22,.3X.5 | RECTANGULAR | CHIP CARRIER | Obsolete | LCC | No | 5 V | e0 | EAR99 | Tin/Lead (Sn/Pb) | AUTOMATIC POWER-DOWN | 8542.32.00.41 | QUAD | NO LEAD | 1 | 1.27 mm | not_compliant | 22 | R-CQCC-N22 | Not Qualified | 5.5 V | COMMERCIAL | 4.5 V | 1 | ASYNCHRONOUS | 0.05 mA | 64KX1 | 3-STATE | 1.905 mm | 1 | 0.02 A | 65536 bit | PARALLEL | SEPARATE | STANDARD SRAM | 4.5 V | NO | 12.446 mm | 7.366 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No X28C010FMB-12 | Intersil Corporation | Datasheet | - | - | Min: 1 Mult: 1 | YES | 32 | 120 ns | INTERSIL CORP | 131072 words | 128000 | 125 °C | -55 °C | CERAMIC, METAL-SEALED COFIRED | DFP | DFP, FL32,.5 | FL32,.5 | RECTANGULAR | FLATPACK | Obsolete | DFP | Yes | 5 V | e3 | 3A001.A.2.C | MATTE TIN | 8542.32.00.51 | DUAL | FLAT | 1 | 1.27 mm | compliant | 32 | R-CDFP-F32 | Not Qualified | 5.5 V | MILITARY | 4.5 V | ASYNCHRONOUS | 0.05 mA | 128KX8 | 3.05 mm | 8 | 0.0005 A | 1048576 bit | 38535Q/M;38534H;883B | PARALLEL | EEPROM | 5 V | 10 ms | YES | YES | NO | 256 words | 11.049 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No X28C010FMB-12 | Xicor Inc | Datasheet | - | - | Min: 1 Mult: 1 | YES | 32 | 120 ns | XICOR INC | 131072 words | 128000 | 125 °C | -55 °C | CERAMIC, METAL-SEALED COFIRED | DFP | CERAMIC, FP-32 | FL32,.5 | RECTANGULAR | FLATPACK | Obsolete | No | 5 V | e0 | TIN LEAD | PAGE WRITE | DUAL | FLAT | 1 | 1.27 mm | unknown | R-CDFP-F32 | Not Qualified | 5.5 V | MILITARY | 4.5 V | ASYNCHRONOUS | 0.05 mA | 128KX8 | 3-STATE | 3.05 mm | 8 | 0.0005 A | 1048576 bit | 38535Q/M;38534H;883B | PARALLEL | EEPROM | 5 V | 10 ms | YES | YES | NO | 256 words | 11.6586 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No IS62LV1024LL-45H | Integrated Silicon Solution Inc | Datasheet | - | - | Min: 1 Mult: 1 | YES | 32 | 45 ns | INTEGRATED SILICON SOLUTION INC | 131072 words | 128000 | 70 °C | PLASTIC/EPOXY | TSOP1 | 8 X 13.40 MM, STSOP1-32 | TSSOP32,.56,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | TSOP1 | No | 3 V | e0 | EAR99 | TIN LEAD | TTL COMPATIBLE INPUTS AND OUTPUTS | 8542.32.00.41 | DUAL | GULL WING | 1 | 0.5 mm | unknown | 32 | R-PDSO-G32 | Not Qualified | 3.15 V | COMMERCIAL | 2.85 V | ASYNCHRONOUS | 0.05 mA | 128KX8 | 3-STATE | 1.2 mm | 8 | 0.000025 A | 1048576 bit | PARALLEL | COMMON | STANDARD SRAM | 2 V | 11.8 mm | 8 mm |
AT28C256E-20TI
Atmel
Package:Memory
Price: please inquire
CAT28C513GI-12
ON Semiconductor
Package:Memory
Price: please inquire
AT28C256E-20JC
Atmel
Package:Memory
Price: please inquire
MT29F32G08CBABAWP:B
Micron
Package:Memory
Price: please inquire
AT28C256E-25JC
Atmel
Package:Memory
Price: please inquire
CY62256L-70SNI
Cypress Semiconductor
Package:Memory
Price: please inquire
AT49BV512-12JI
Atmel
Package:Memory
Price: please inquire
AT28C256E-20JI
Atmel
Package:Memory
Price: please inquire
E28F016SC-120
Intel
Package:Memory
Price: please inquire
MX28F1000PC-15
Macronix
Package:Memory
Price: please inquire
MX29F002BQC-70
Macronix
Package:Memory
Price: please inquire
79C0408RPFE-12
Maxwell Technologies
Package:Memory
Price: please inquire
IS42VS16100E-10TLI
ISSI
Package:Memory
Price: please inquire
AT28C256-20SC
Microchip
Package:Memory
Price: please inquire
AT28C256E-20SI
Microchip
Package:Memory
Price: please inquire
AT28C256-20SI
Microchip
Package:Memory
Price: please inquire
CY7C187-45LC
Cypress Semiconductor
Package:Memory
Price: please inquire
X28C010FMB-12
Intersil Corporation
Package:Memory
Price: please inquire
X28C010FMB-12
Xicor Inc
Package:Memory
Price: please inquire
IS62LV1024LL-45H
Integrated Silicon Solution Inc
Package:Memory
Price: please inquire
