The category is 'Memory'
Memory (144)
- All Manufacturers
- Ihs Manufacturer
- JESD-30 Code
- Memory Density
- Memory IC Type
- Memory Width
- Number of Terminals
- Number of Words
- Number of Words Code
- Operating Temperature-Max
- Organization
- Package Code
- Supply Current-Max
- Supply Current-Max:
0.05 mA
Image | Part Number | Manufacturer | Datasheet | Availability | Pricing(USD) | Quantity | RoHS | Package / Case | Surface Mount | Supplier Device Package | Number of Terminals | Access Time-Max | Clock Frequency-Max (fCLK) | Ihs Manufacturer | Manufacturer | Manufacturer Part Number | Moisture Sensitivity Levels | Number of Words | Number of Words Code | Operating Temperature-Max | Operating Temperature-Min | Package Body Material | Package Code | Package Description | Package Equivalence Code | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Reflow Temperature-Max (s) | Risk Rank | Rohs Code | Supply Voltage-Nom (Vsup) | Usage Level | Operating Temperature | Packaging | Series | Size / Dimension | Tolerance | JESD-609 Code | Pbfree Code | Part Status | Number of Terminations | ECCN Code | Temperature Coefficient | Type | Resistance | Terminal Finish | Composition | Color | Power (Watts) | Additional Feature | HTS Code | Subcategory | Technology | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Terminal Pitch | Reach Compliance Code | Time@Peak Reflow Temperature-Max (s) | Pin Count | JESD-30 Code | Qualification Status | Failure Rate | Supply Voltage-Max (Vsup) | Power Supplies | Temperature Grade | Supply Voltage-Min (Vsup) | Number of Ports | Operating Mode | Supply Current-Max | Organization | Output Characteristics | Seated Height-Max | Memory Width | Standby Current-Max | Memory Density | Screening Level | Parallel/Serial | I/O Type | Memory IC Type | Programming Voltage | Endurance | Write Cycle Time-Max (tWC) | Standby Voltage-Min | Data Polling | Toggle Bit | Command User Interface | Output Enable | Number of Sectors/Size | Sector Size | Page Size | Boot Block | Refresh Cycles | Sequential Burst Length | Interleaved Burst Length | Access Mode | Features | Self Refresh | Height Seated (Max) | Length | Width |
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 | Mfr Part No X28C010J-25 | Intersil (Renesas Electronics America) | Datasheet | - | - | Min: 1 Mult: 1 | YES | 32 | 250 ns | XICOR INC | X28C010J-25 | 131072 words | 128000 | 70 °C | PLASTIC/EPOXY | QCCJ | PLASTIC, LCC-32 | LDCC32,.5X.6 | RECTANGULAR | CHIP CARRIER | Obsolete | NOT SPECIFIED | 5.7 | No | 5 V | e0 | Tin/Lead (Sn/Pb) | PAGE WRITE | QUAD | J BEND | NOT SPECIFIED | 1 | 1.27 mm | unknown | R-PQCC-J32 | Not Qualified | 5.5 V | 5 V | COMMERCIAL | 4.5 V | ASYNCHRONOUS | 0.05 mA | 128KX8 | 3-STATE | 3.56 mm | 8 | 0.0005 A | 1048576 bit | PARALLEL | EEPROM | 5 V | 10 ms | YES | YES | NO | 256 words | 13.97 mm | 11.43 mm | ||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No AT28C256E-25JI | Microchip | Datasheet | - | - | Min: 1 Mult: 1 | YES | 32 | 250 ns | ATMEL CORP | AT28C256E-25JI | 2 | 32768 words | 32000 | 85 °C | -40 °C | PLASTIC/EPOXY | QCCJ | QCCJ, LDCC32,.5X.6 | LDCC32,.5X.6 | RECTANGULAR | CHIP CARRIER | Obsolete | QFJ | 30 | 5.7 | No | 5 V | Military grade | e0 | EAR99 | Tin/Lead (Sn/Pb) | AUTOMATIC WRITE | 8542.32.00.51 | QUAD | J BEND | 225 | 1 | 1.27 mm | compliant | 32 | R-PQCC-J32 | Not Qualified | 5.5 V | 5 V | INDUSTRIAL | 4.5 V | ASYNCHRONOUS | 0.05 mA | 32KX8 | 3-STATE | 3.556 mm | 8 | 0.0002 A | 262144 bit | MIL-STD-883 | PARALLEL | EEPROM | 5 V | 100000 Write/Erase Cycles | 10 ms | YES | YES | NO | 64 words | 13.97 mm | 11.43 mm | |||||||||||||||||||||||||||||||||||||
| Mfr Part No AT28C256-25PI | Microchip | Datasheet | - | - | Min: 1 Mult: 1 | NO | 28 | 250 ns | ATMEL CORP | AT28C256-25PI | 32768 words | 32000 | 85 °C | -40 °C | PLASTIC/EPOXY | DIP | DIP, DIP28,.6 | DIP28,.6 | RECTANGULAR | IN-LINE | Obsolete | DIP | 30 | 5.74 | No | 5 V | Military grade | e0 | EAR99 | Tin/Lead (Sn/Pb) | AUTOMATIC WRITE | 8542.32.00.51 | DUAL | THROUGH-HOLE | 240 | 1 | 2.54 mm | unknown | 28 | R-PDIP-T28 | Not Qualified | 5.5 V | 5 V | INDUSTRIAL | 4.5 V | ASYNCHRONOUS | 0.05 mA | 32KX8 | 3-STATE | 4.826 mm | 8 | 0.0002 A | 262144 bit | MIL-STD-883 | PARALLEL | EEPROM | 5 V | 10000 Write/Erase Cycles | 10 ms | YES | YES | NO | 64 words | 37.0205 mm | 15.24 mm | ||||||||||||||||||||||||||||||||||||||
| Mfr Part No AT28C256-20TC | Microchip | Datasheet | - | - | Min: 1 Mult: 1 | YES | 28 | 200 ns | ATMEL CORP | AT28C256-20TC | 3 | 32768 words | 32000 | 70 °C | PLASTIC/EPOXY | TSOP1 | TSOP1, TSSOP28,.53,22 | TSSOP28,.53,22 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | TSOP1 | 30 | 5.7 | No | 5 V | Military grade | e0 | No | EAR99 | Tin/Lead (Sn/Pb) | AUTOMATIC WRITE | 8542.32.00.51 | DUAL | GULL WING | 240 | 1 | 0.55 mm | compliant | 28 | R-PDSO-G28 | Not Qualified | 5.5 V | 5 V | COMMERCIAL | 4.5 V | ASYNCHRONOUS | 0.05 mA | 32KX8 | 3-STATE | 1.2 mm | 8 | 0.0002 A | 262144 bit | MIL-STD-883 | PARALLEL | EEPROM | 5 V | 10000 Write/Erase Cycles | 10 ms | YES | YES | NO | 64 words | 11.8 mm | 8 mm | |||||||||||||||||||||||||||||||||||||
| Mfr Part No AT28C256F-20JC | Microchip | Datasheet | - | - | Min: 1 Mult: 1 | YES | 32 | 200 ns | ATMEL CORP | AT28C256F-20JC | 2 | 32768 words | 32000 | 70 °C | PLASTIC/EPOXY | QCCJ | QCCJ, LDCC32,.5X.6 | LDCC32,.5X.6 | RECTANGULAR | CHIP CARRIER | Obsolete | QFJ | 30 | 5.72 | No | 5 V | Military grade | e0 | EAR99 | Tin/Lead (Sn/Pb) | AUTOMATIC WRITE | 8542.32.00.51 | QUAD | J BEND | 225 | 1 | 1.27 mm | compliant | 32 | R-PQCC-J32 | Not Qualified | 5.5 V | 5 V | COMMERCIAL | 4.5 V | ASYNCHRONOUS | 0.05 mA | 32KX8 | 3-STATE | 3.556 mm | 8 | 0.0002 A | 262144 bit | MIL-STD-883 | PARALLEL | EEPROM | 5 V | 10000 Write/Erase Cycles | 3 ms | YES | YES | NO | 64 words | 13.97 mm | 11.43 mm | ||||||||||||||||||||||||||||||||||||||
| Mfr Part No AT28C256F-20SI | Microchip | Datasheet | - | - | Min: 1 Mult: 1 | YES | 28 | 200 ns | ATMEL CORP | AT28C256F-20SI | 2 | 32768 words | 32000 | 85 °C | -40 °C | PLASTIC/EPOXY | SOP | SOP, SOP28,.4 | SOP28,.4 | RECTANGULAR | SMALL OUTLINE | Obsolete | SOIC | 30 | 5.74 | No | 5 V | Military grade | e0 | No | EAR99 | Tin/Lead (Sn/Pb) | AUTOMATIC WRITE | 8542.32.00.51 | DUAL | GULL WING | 240 | 1 | 1.27 mm | compliant | 28 | R-PDSO-G28 | Not Qualified | 5.5 V | 5 V | INDUSTRIAL | 4.5 V | ASYNCHRONOUS | 0.05 mA | 32KX8 | 3-STATE | 2.65 mm | 8 | 0.0002 A | 262144 bit | MIL-STD-883 | PARALLEL | EEPROM | 5 V | 10000 Write/Erase Cycles | 3 ms | YES | YES | NO | 64 words | 17.9 mm | 7.5 mm | ||||||||||||||||||||||||||||||||||||
| Mfr Part No LP62S1664CU-55LLTF | AMIC Technology | Datasheet | - | - | Min: 1 Mult: 1 | Axial | YES | Axial | 48 | 55 ns | AMIC TECHNOLOGY CORP | AMIC Technology | LP62S1664CU-55LLTF | 65536 words | 64000 | 85 °C | -25 °C | PLASTIC/EPOXY | TFBGA | TFBGA, BGA48,6X8,30 | BGA48,6X8,30 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Contact Manufacturer | 5.58 | Yes | 3 V | -65°C ~ 275°C | Bulk | CP | 1.378 L x 0.394 W (35.00mm x 10.00mm) | ±5% | Active | 2 | ±400ppm/°C | 62 Ohms | Wirewound | 7W | SRAMs | CMOS | BOTTOM | BALL | 1 | 0.75 mm | unknown | R-PBGA-B48 | Not Qualified | -- | 3.6 V | 3/3.3 V | OTHER | 2.7 V | ASYNCHRONOUS | 0.05 mA | 64KX16 | 3-STATE | 1.2 mm | 16 | 0.000003 A | 1048576 bit | PARALLEL | COMMON | STANDARD SRAM | 2 V | YES | Flame Proof, Safety | -- | 8 mm | 6 mm | ||||||||||||||||||||||||||||||||||
| Mfr Part No CY62256NLL-70SNXCT | Alliance Memory | Datasheet | - | - | Min: 1 Mult: 1 | YES | 28 | 70 ns | CYPRESS SEMICONDUCTOR CORP | Cypress Semiconductor | CY62256NLL-70SNXCT | 3 | 32768 words | 32000 | 70 °C | PLASTIC/EPOXY | SOP | SOP, SOP28,.45 | SOP28,.45 | RECTANGULAR | SMALL OUTLINE | Obsolete | SOIC | 30 | 5.79 | Yes | 5 V | e4 | Yes | EAR99 | Nickel/Palladium/Gold (Ni/Pd/Au) | 8542.32.00.41 | SRAMs | CMOS | DUAL | GULL WING | 260 | 1 | 1.27 mm | compliant | 28 | R-PDSO-G28 | Not Qualified | 5.5 V | 5 V | COMMERCIAL | 4.5 V | ASYNCHRONOUS | 0.05 mA | 32KX8 | 3-STATE | 2.794 mm | 8 | 0.000005 A | 262144 bit | PARALLEL | COMMON | STANDARD SRAM | 2 V | 17.9324 mm | 7.5057 mm | ||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No MX29F004BTC-12 | Macronix | Datasheet | - | - | Min: 1 Mult: 1 | YES | 32 | 120 ns | MACRONIX INTERNATIONAL CO LTD | Macronix International Co Ltd | MX29F004BTC-12 | 524288 words | 512000 | 70 °C | PLASTIC/EPOXY | TSOP1 | TSOP1, TSSOP32,.8,20 | TSSOP32,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | TSOP1 | NOT SPECIFIED | 5.91 | No | 5 V | e0 | EAR99 | NOR TYPE | Tin/Lead (Sn/Pb) | Red | 8542.32.00.51 | Flash Memories | CMOS | DUAL | GULL WING | NOT SPECIFIED | 1 | 0.5 mm | unknown | 32 | R-PDSO-G32 | Not Qualified | 5.5 V | 5 V | COMMERCIAL | 4.5 V | ASYNCHRONOUS | 0.05 mA | 512KX8 | 1.2 mm | 8 | 0.000005 A | 4194304 bit | PARALLEL | FLASH | 5 V | YES | YES | YES | 1,2,1,7 | 16K,8K,32K,64K | BOTTOM | 18.4 mm | 8 mm | ||||||||||||||||||||||||||||||||||||||
| Mfr Part No MX29F004BPC-70 | Macronix | Datasheet | - | - | Min: 1 Mult: 1 | NO | 32 | 70 ns | MACRONIX INTERNATIONAL CO LTD | Macronix International Co Ltd | MX29F004BPC-70 | 524288 words | 512000 | 70 °C | PLASTIC/EPOXY | DIP | DIP, DIP32,.6 | DIP32,.6 | RECTANGULAR | IN-LINE | Obsolete | DIP | NOT SPECIFIED | 5.91 | No | 5 V | e0 | EAR99 | NOR TYPE | Tin/Lead (Sn/Pb) | 8542.32.00.51 | Flash Memories | CMOS | DUAL | THROUGH-HOLE | NOT SPECIFIED | 1 | 2.54 mm | unknown | 32 | R-PDIP-T32 | Not Qualified | 5.5 V | 5 V | COMMERCIAL | 4.5 V | ASYNCHRONOUS | 0.05 mA | 512KX8 | 4.9 mm | 8 | 0.000005 A | 4194304 bit | PARALLEL | FLASH | 5 V | YES | YES | YES | 1,2,1,7 | 16K,8K,32K,64K | BOTTOM | 41.91 mm | 15.24 mm | |||||||||||||||||||||||||||||||||||||||
| Mfr Part No LP62S1664CV-55LLTF | AMIC Technology | Datasheet | - | - | Min: 1 Mult: 1 | YES | 44 | 55 ns | AMIC TECHNOLOGY CORP | AMIC Technology | LP62S1664CV-55LLTF | 65536 words | 64000 | 85 °C | -25 °C | PLASTIC/EPOXY | TSOP2 | TSOP2, TSOP44,.46,32 | TSOP44,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Contact Manufacturer | 5.57 | Yes | 3 V | SRAMs | CMOS | DUAL | GULL WING | 1 | 0.8 mm | unknown | R-PDSO-G44 | Not Qualified | 3.6 V | 3/3.3 V | OTHER | 2.7 V | ASYNCHRONOUS | 0.05 mA | 64KX16 | 3-STATE | 1.2 mm | 16 | 0.000003 A | 1048576 bit | PARALLEL | COMMON | STANDARD SRAM | 2 V | YES | 18.41 mm | 10.16 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr Part No WS57C128FB-70DM | STMicroelectronics | Datasheet | - | - | Min: 1 Mult: 1 | NO | 28 | 70 ns | STMICROELECTRONICS | 16384 words | 16000 | 125 °C | -55 °C | CERAMIC, GLASS-SEALED | WDIP | WDIP, DIP28,.6 | DIP28,.6 | RECTANGULAR | IN-LINE, WINDOW | Obsolete | DIP | No | 5 V | e0 | 3A001.A.2.C | TIN LEAD | 8542.32.00.61 | DUAL | THROUGH-HOLE | 1 | 2.54 mm | not_compliant | 28 | R-GDIP-T28 | Not Qualified | 5.5 V | MILITARY | 4.5 V | ASYNCHRONOUS | 0.05 mA | 16KX8 | 3-STATE | 5.72 mm | 8 | 0.0005 A | 131072 bit | PARALLEL | COMMON | UVPROM | 12.75 V | 37.215 mm | 15.24 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No K4S561632N-LL75 | Samsung Semiconductor | Datasheet | - | - | Min: 1 Mult: 1 | YES | 54 | 5.4 ns | 133 MHz | SAMSUNG SEMICONDUCTOR INC | 3 | 16777216 words | 16000000 | 70 °C | PLASTIC/EPOXY | TSOP2 | TSOP2, TSOP54,.46,32 | TSOP54,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | Yes | 3.3 V | e6 | Yes | EAR99 | TIN BISMUTH | AUTO/SELF REFRESH | 8542.32.00.24 | DUAL | GULL WING | 260 | 1 | 0.8 mm | unknown | R-PDSO-G54 | Not Qualified | 3.6 V | COMMERCIAL | 3 V | 1 | SYNCHRONOUS | 0.05 mA | 16MX16 | 3-STATE | 1.2 mm | 16 | 0.002 A | 268435456 bit | COMMON | SYNCHRONOUS DRAM | 8192 | 1,2,4,8,FP | 1,2,4,8 | FOUR BANK PAGE BURST | YES | 22.22 mm | 10.16 mm | |||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No UPD41416-15 | Renesas Electronics Corporation | Datasheet | - | - | Min: 1 Mult: 1 | NO | 18 | 150 ns | RENESAS ELECTRONICS CORP | 16384 words | 16000 | 70 °C | PLASTIC/EPOXY | DIP | DIP, DIP18,.3 | DIP18,.3 | RECTANGULAR | IN-LINE | Obsolete | No | e0 | EAR99 | Tin/Lead (Sn/Pb) | 8542.32.00.02 | DUAL | THROUGH-HOLE | 2.54 mm | unknown | R-PDIP-T18 | Not Qualified | COMMERCIAL | 0.05 mA | 16KX4 | 3-STATE | 4 | 65536 bit | COMMON | PAGE MODE DRAM | 128 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr Part No KM616FS2000TI-12 | Samsung Semiconductor | Datasheet | - | - | Min: 1 Mult: 1 | YES | 44 | 120 ns | SAMSUNG SEMICONDUCTOR INC | 131072 words | 128000 | 85 °C | -40 °C | PLASTIC/EPOXY | TSOP2 | TSOP2, TSOP44,.46,32 | TSOP44,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | TSOP2 | No | 2.5 V | e0 | 3A991.B.2.A | TIN LEAD | 8542.32.00.41 | DUAL | GULL WING | 1 | 0.8 mm | unknown | 44 | R-PDSO-G44 | Not Qualified | 3.3 V | INDUSTRIAL | 2.3 V | ASYNCHRONOUS | 0.05 mA | 128KX16 | 3-STATE | 1.2 mm | 16 | 0.00001 A | 2097152 bit | PARALLEL | COMMON | STANDARD SRAM | 1.5 V | 18.41 mm | 10.16 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No X28C010DM-25 | Xicor Inc | Datasheet | - | - | Min: 1 Mult: 1 | NO | 32 | 250 ns | XICOR INC | 131072 words | 128000 | 125 °C | -55 °C | CERAMIC, GLASS-SEALED | DIP | HERMETIC SEALED, CERDIP-32 | DIP32,.6 | RECTANGULAR | IN-LINE | Obsolete | No | 5 V | e0 | TIN LEAD | PAGE WRITE | DUAL | THROUGH-HOLE | 1 | 2.54 mm | unknown | R-GDIP-T32 | Not Qualified | 5.5 V | MILITARY | 4.5 V | ASYNCHRONOUS | 0.05 mA | 128KX8 | 3-STATE | 5.9 mm | 8 | 0.0005 A | 1048576 bit | PARALLEL | EEPROM | 5 V | 10 ms | YES | YES | NO | 256 words | 15.24 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No CXK5864BSP-12L | Sony Semiconductor | Datasheet | - | - | Min: 1 Mult: 1 | NO | 28 | 120 ns | SONY CORP | 8192 words | 8000 | 70 °C | PLASTIC/EPOXY | DIP | DIP, DIP28,.3 | DIP28,.3 | RECTANGULAR | IN-LINE | Obsolete | DIP | No | 5 V | e0 | No | EAR99 | TIN LEAD | 8542.32.00.41 | DUAL | THROUGH-HOLE | 1 | 2.54 mm | unknown | 28 | R-PDIP-T28 | Not Qualified | 5.5 V | COMMERCIAL | 4.5 V | 1 | ASYNCHRONOUS | 0.05 mA | 8KX8 | 3-STATE | 4.4 mm | 8 | 0.000035 A | 65536 bit | PARALLEL | COMMON | STANDARD SRAM | 2 V | YES | 35.1 mm | 7.62 mm | |||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No K4M64163PK-BC90 | Samsung Semiconductor | Datasheet | - | - | Min: 1 Mult: 1 | YES | 54 | 7 ns | 111 MHz | SAMSUNG SEMICONDUCTOR INC | 1 | 4194304 words | 4000000 | 70 °C | -25 °C | PLASTIC/EPOXY | FBGA | FBGA, BGA54,9X9,32 | BGA54,9X9,32 | SQUARE | GRID ARRAY, FINE PITCH | Obsolete | Yes | 1.8 V | e3 | Yes | EAR99 | MATTE TIN | 8542.32.00.02 | BOTTOM | BALL | 0.8 mm | compliant | S-PBGA-B54 | Not Qualified | OTHER | 0.05 mA | 4MX16 | 3-STATE | 16 | 0.0003 A | 67108864 bit | COMMON | SYNCHRONOUS DRAM | 4096 | 1,2,4,8,FP | 1,2,4,8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No LC36256AL-10 | SANYO Electric Co Ltd | Datasheet | - | - | Min: 1 Mult: 1 | NO | 28 | 100 ns | SANYO ELECTRIC CO LTD | 32768 words | 32000 | 70 °C | PLASTIC/EPOXY | DIP | DIP, DIP28,.6 | DIP28,.6 | RECTANGULAR | IN-LINE | Obsolete | DIP | No | 5 V | e0 | EAR99 | TIN LEAD | 8542.32.00.41 | DUAL | THROUGH-HOLE | 1 | 2.54 mm | unknown | 28 | R-PDIP-T28 | Not Qualified | 5.5 V | COMMERCIAL | 4.5 V | 1 | ASYNCHRONOUS | 0.05 mA | 32KX8 | 3-STATE | 5.1 mm | 8 | 0.00001 A | 262144 bit | PARALLEL | COMMON | STANDARD SRAM | 2 V | YES | 37.9 mm | 15.24 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No LY625128RL-70LL | Lyontek Inc | Datasheet | - | - | Min: 1 Mult: 1 | YES | 32 | 70 ns | LYONTEK INC | 3 | 524288 words | 512000 | 70 °C | PLASTIC/EPOXY | LSSOP | LSSOP, TSSOP32,.56,20 | TSSOP32,.56,20 | RECTANGULAR | SMALL OUTLINE, LOW PROFILE, SHRINK PITCH | Contact Manufacturer | Yes | 5 V | e3 | 3A991.B.2.A | Tin (Sn) | 8542.32.00.41 | DUAL | GULL WING | 260 | 1 | 0.5 mm | compliant | 30 | R-PDSO-G32 | Not Qualified | 5.5 V | COMMERCIAL | 4.5 V | 1 | ASYNCHRONOUS | 0.05 mA | 512KX8 | 3-STATE | 1.25 mm | 8 | 0.00003 A | 4194304 bit | PARALLEL | COMMON | STANDARD SRAM | 1.5 V | YES | 11.8 mm | 8 mm |
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X28C010J-25
Intersil (Renesas Electronics America)
Package:Memory
Price: please inquire
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AT28C256E-25JI
Microchip
Package:Memory
Price: please inquire
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AT28C256-25PI
Microchip
Package:Memory
Price: please inquire
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AT28C256-20TC
Microchip
Package:Memory
Price: please inquire
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AT28C256F-20JC
Microchip
Package:Memory
Price: please inquire
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AT28C256F-20SI
Microchip
Package:Memory
Price: please inquire
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LP62S1664CU-55LLTF
AMIC Technology
Package:Memory
Price: please inquire
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CY62256NLL-70SNXCT
Alliance Memory
Package:Memory
Price: please inquire
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MX29F004BTC-12
Macronix
Package:Memory
Price: please inquire
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MX29F004BPC-70
Macronix
Package:Memory
Price: please inquire
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LP62S1664CV-55LLTF
AMIC Technology
Package:Memory
Price: please inquire
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WS57C128FB-70DM
STMicroelectronics
Package:Memory
Price: please inquire
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K4S561632N-LL75
Samsung Semiconductor
Package:Memory
Price: please inquire
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UPD41416-15
Renesas Electronics Corporation
Package:Memory
Price: please inquire
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KM616FS2000TI-12
Samsung Semiconductor
Package:Memory
Price: please inquire
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X28C010DM-25
Xicor Inc
Package:Memory
Price: please inquire
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CXK5864BSP-12L
Sony Semiconductor
Package:Memory
Price: please inquire
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K4M64163PK-BC90
Samsung Semiconductor
Package:Memory
Price: please inquire
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LC36256AL-10
SANYO Electric Co Ltd
Package:Memory
Price: please inquire
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LY625128RL-70LL
Lyontek Inc
Package:Memory
Price: please inquire