The category is 'Memory'
Memory (144)
- All Manufacturers
- Ihs Manufacturer
- JESD-30 Code
- Memory Density
- Memory IC Type
- Memory Width
- Number of Terminals
- Number of Words
- Number of Words Code
- Operating Temperature-Max
- Organization
- Package Code
- Supply Current-Max
- Supply Current-Max:
0.05 mA
Image | Part Number | Manufacturer | Datasheet | Availability | Pricing(USD) | Quantity | RoHS | Factory Lead Time | Mount | Mounting Type | Package / Case | Surface Mount | Number of Pins | Supplier Device Package | Number of Terminals | Access Time-Max | Base Product Number | Ihs Manufacturer | Manufacturer | Manufacturer Part Number | Memory Types | Mfr | Moisture Sensitivity Levels | Number of Words | Number of Words Code | Operating Temperature-Max | Operating Temperature-Min | Package | Package Body Material | Package Code | Package Description | Package Equivalence Code | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Product Status | Reflow Temperature-Max (s) | Risk Rank | RoHS | Rohs Code | Schedule B | Supply Voltage-Nom (Vsup) | Usage Level | Operating Temperature | Series | JESD-609 Code | Pbfree Code | ECCN Code | Type | Terminal Finish | Max Operating Temperature | Min Operating Temperature | Additional Feature | HTS Code | Subcategory | Technology | Voltage - Supply | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Terminal Pitch | Reach Compliance Code | Pin Count | JESD-30 Code | Qualification Status | Brand Name | Operating Supply Voltage | Supply Voltage-Max (Vsup) | Power Supplies | Temperature Grade | Supply Voltage-Min (Vsup) | Interface | Max Supply Voltage | Min Supply Voltage | Memory Size | Operating Supply Current | Nominal Supply Current | Operating Mode | Supply Current-Max | Access Time | Memory Format | Memory Interface | Data Bus Width | Organization | Output Characteristics | Seated Height-Max | Memory Width | Write Cycle Time - Word, Page | Address Bus Width | Density | Standby Current-Max | Memory Density | Screening Level | Parallel/Serial | Sync/Async | Word Size | Memory IC Type | Programming Voltage | Endurance | Write Cycle Time-Max (tWC) | Alternate Memory Width | Data Polling | Toggle Bit | Command User Interface | Number of Sectors/Size | Sector Size | Page Size | Ready/Busy | Boot Block | Common Flash Interface | Memory Organization | Length | Width | Radiation Hardening | Lead Free |
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 | Mfr Part No AT28C256-20PI | Atmel | Datasheet | 447 | - | Min: 1 Mult: 1 | NO | 28 | 200 ns | ATMEL CORP | Atmel Corporation | AT28C256-20PI | 1 | 32768 words | 32000 | 85 °C | -40 °C | PLASTIC/EPOXY | DIP | DIP, DIP28,.6 | DIP28,.6 | RECTANGULAR | IN-LINE | Obsolete | DIP | NOT SPECIFIED | 5.74 | No | 5 V | Military grade | e0 | EAR99 | Tin/Lead (Sn/Pb) | AUTOMATIC WRITE | 8542.32.00.51 | EEPROMs | CMOS | DUAL | THROUGH-HOLE | NOT SPECIFIED | 1 | 2.54 mm | unknown | 28 | R-PDIP-T28 | Not Qualified | 5.5 V | 5 V | INDUSTRIAL | 4.5 V | ASYNCHRONOUS | 0.05 mA | 32KX8 | 3-STATE | 4.826 mm | 8 | 0.0002 A | 262144 bit | MIL-STD-883 | PARALLEL | EEPROM | 5 V | 10000 Write/Erase Cycles | 10 ms | YES | YES | NO | 64 words | 37.0205 mm | 15.24 mm | |||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No AT28C256-25PC | Atmel | Datasheet | 960 | - | Min: 1 Mult: 1 | NO | 28 | 250 ns | ATMEL CORP | Atmel Corporation | AT28C256-25PC | 1 | 32768 words | 32000 | 70 °C | PLASTIC/EPOXY | DIP | DIP, DIP28,.6 | DIP28,.6 | RECTANGULAR | IN-LINE | Obsolete | DIP | 30 | 8.6 | No | 5 V | Military grade | e0 | EAR99 | Tin/Lead (Sn/Pb) | AUTOMATIC WRITE | 8542.32.00.51 | EEPROMs | CMOS | DUAL | THROUGH-HOLE | 225 | 1 | 2.54 mm | compliant | 28 | R-PDIP-T28 | Not Qualified | 5.5 V | 5 V | COMMERCIAL | 4.5 V | ASYNCHRONOUS | 0.05 mA | 32KX8 | 3-STATE | 4.826 mm | 8 | 0.0002 A | 262144 bit | MIL-STD-883 | PARALLEL | EEPROM | 5 V | 10000 Write/Erase Cycles | 10 ms | YES | YES | NO | 64 words | 37.0205 mm | 15.24 mm | ||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No CAT28C512GI-15 | ON Semiconductor | Datasheet | - | - | Min: 1 Mult: 1 | YES | 32 | 150 ns | CATALYST SEMICONDUCTOR INC | Catalyst Semiconductor | CAT28C512GI-15 | 3 | 65536 words | 64000 | 85 °C | -40 °C | PLASTIC/EPOXY | QCCJ | QCCJ, LDCC32,.5X.6 | LDCC32,.5X.6 | RECTANGULAR | CHIP CARRIER | Transferred | QFJ | 40 | 5.11 | Yes | 5 V | e3 | EAR99 | MATTE TIN | 8542.32.00.51 | EEPROMs | CMOS | QUAD | J BEND | 260 | 1 | 1.27 mm | unknown | 32 | R-PQCC-J32 | Not Qualified | 5.5 V | 5 V | INDUSTRIAL | 4.5 V | ASYNCHRONOUS | 0.05 mA | 64KX8 | 3.55 mm | 8 | 0.0002 A | 524288 bit | PARALLEL | EEPROM | 5 V | 100000 Write/Erase Cycles | 5 ms | YES | YES | NO | 128 words | 13.97 mm | 11.43 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No AT49LV001N-70VI | Atmel | Datasheet | - | - | Min: 1 Mult: 1 | YES | 32 | 70 ns | ATMEL CORP | Atmel Corporation | AT49LV001N-70VI | 3 | 131072 words | 128000 | 85 °C | -40 °C | PLASTIC/EPOXY | TSOP1 | 8 X 14 MM, PLASTIC, MO-142BA, TSOP1-32 | TSSOP32,.56,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | TSOP1 | 30 | 5.9 | No | 3.3 V | e0 | EAR99 | NOR TYPE | Tin/Lead (Sn/Pb) | 8542.32.00.51 | Flash Memories | CMOS | DUAL | GULL WING | 240 | 1 | 0.5 mm | compliant | 32 | R-PDSO-G32 | Not Qualified | 3.6 V | 3.3 V | INDUSTRIAL | 3 V | ASYNCHRONOUS | 0.05 mA | 128KX8 | 1.2 mm | 8 | 0.00005 A | 1048576 bit | PARALLEL | FLASH | 3 V | YES | YES | YES | 1,2,1,1 | 16K,8K,32K,64K | BOTTOM | 12.4 mm | 8 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No K8D3216UBC-DI07 | Samsung | Datasheet | 560 | - | Min: 1 Mult: 1 | YES | 48 | 70 ns | SAMSUNG SEMICONDUCTOR INC | Samsung Semiconductor | K8D3216UBC-DI07 | NOR | 2097152 words | 2000000 | 85 °C | -40 °C | PLASTIC/EPOXY | FBGA | FBGA, BGA48,6X8,32 | BGA48,6X8,32 | RECTANGULAR | GRID ARRAY, FINE PITCH | Obsolete | 5.82 | Non-Compliant | Yes | NOR TYPE | 85 °C | -40 °C | Flash Memories | CMOS | BOTTOM | BALL | 0.8 mm | compliant | R-PBGA-B48 | Not Qualified | 3.3 V | 3/3.3 V | INDUSTRIAL | Parallel | 0.05 mA | 2MX16 | 16 | 32 Mb | 0.000018 A | 33554432 bit | PARALLEL | FLASH | 2.7 V | 8 | YES | YES | YES | 8,63 | 8K,64K | YES | BOTTOM | YES | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No AT28C256E-20TC | Atmel | Datasheet | 800 | - | Min: 1 Mult: 1 | YES | 28 | 200 ns | MICROCHIP TECHNOLOGY INC | Microchip Technology Inc | AT28C256E-20TC | 3 | 32768 words | 32000 | 70 °C | PLASTIC/EPOXY | TSOP1 | 8 X 13.40 MM, PLASTIC, MO-183, TSOP1-28 | TSSOP28,.53,22 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | 30 | 5.74 | No | 5 V | Military grade | e0 | EAR99 | TIN LEAD | AUTOMATIC WRITE | 8542.32.00.51 | EEPROMs | CMOS | DUAL | GULL WING | 240 | 1 | 0.55 mm | unknown | R-PDSO-G28 | Not Qualified | 5.5 V | 5 V | COMMERCIAL | 4.5 V | ASYNCHRONOUS | 0.05 mA | 32KX8 | 3-STATE | 1.2 mm | 8 | 0.0002 A | 262144 bit | MIL-STD-883 | PARALLEL | EEPROM | 5 V | 100000 Write/Erase Cycles | 10 ms | YES | YES | NO | 64 words | 11.8 mm | 8 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No M58BW32FB4T3F | Micron | Datasheet | 342 | - | Min: 1 Mult: 1 | YES | 80 | 45 ns | NUMONYX | Numonyx Memory Solutions | M58BW32FB4T3F | 1048576 words | 1000000 | 125 °C | -40 °C | PLASTIC/EPOXY | QFP | QFP, QFP80,.7X.9,32 | QFP80,.7X.9,32 | RECTANGULAR | FLATPACK | Transferred | QFP | NOT SPECIFIED | 5.52 | Yes | 3.3 V | 3A991.B.1.A | NOR TYPE | SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; BOTTOM BOOT BLOCK | 8542.32.00.51 | Flash Memories | CMOS | QUAD | GULL WING | NOT SPECIFIED | 1 | 0.8 mm | unknown | 80 | R-PQFP-G80 | Not Qualified | 3.6 V | 3/3.3 V | AUTOMOTIVE | 2.7 V | ASYNCHRONOUS | 0.05 mA | 1MX32 | 3.4 mm | 32 | 0.00015 A | 33554432 bit | PARALLEL | FLASH | 3.3 V | NO | NO | YES | 4,8,62 | 4K,2K,16K | 4 words | BOTTOM | YES | 20 mm | 14 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No AT28C256-20LM/883 | Adesto Technologies | Datasheet | - | - | Min: 1 Mult: 1 | 18 Weeks | YES | 32 | 200 ns | MICROCHIP TECHNOLOGY INC | Microchip Technology Inc | AT28C256-20LM/883 | 32768 words | 32000 | 125 °C | -55 °C | CERAMIC, METAL-SEALED COFIRED | QCCN | CERAMIC, LCC-32 | LCC32,.45X.55 | RECTANGULAR | CHIP CARRIER | Active | 30 | 5.6 | No | 5 V | Military grade | e0 | No | Tin/Lead (Sn/Pb) | AUTOMATIC WRITE | EEPROMs | CMOS | QUAD | NO LEAD | 225 | 1 | 1.27 mm | unknown | R-CQCC-N32 | Not Qualified | 5.5 V | 5 V | MILITARY | 4.5 V | ASYNCHRONOUS | 0.05 mA | 32KX8 | 3-STATE | 2.54 mm | 8 | 0.0003 A | 262144 bit | MIL-STD-883 Class C | PARALLEL | EEPROM | 5 V | 10000 Write/Erase Cycles | 10 ms | YES | YES | NO | 64 words | 13.97 mm | 11.43 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No MT29F32G08CBABAWP-IT:B | Micron | Datasheet | 265 | - | Min: 1 Mult: 1 | YES | 48 | 20 ns | MICRON TECHNOLOGY INC | Micron Technology Inc | MT29F32G08CBABAWP-IT:B | 4294967296 words | 4000000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TSOP1 | LEAD FREE, PLASTIC, TSOP1-48 | TSSOP48,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | 5.8 | Yes | 3.3 V | MLC NAND TYPE | Flash Memories | CMOS | DUAL | GULL WING | 1 | 0.5 mm | unknown | R-PDSO-G48 | Not Qualified | 3.6 V | 3/3.3 V | INDUSTRIAL | 2.7 V | ASYNCHRONOUS | 0.05 mA | 4GX8 | 1.2 mm | 8 | 0.00005 A | 34359738368 bit | PARALLEL | FLASH | 3.3 V | NO | NO | YES | 4K | 1M | 4K words | YES | 18.4 mm | 12 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No MT29F32G08CBCBBH1-12:B | Micron | Datasheet | - | - | Min: 1 Mult: 1 | YES | 100 | 20 ns | MICRON TECHNOLOGY INC | Micron Technology Inc | MT29F32G08CBCBBH1-12:B | 4294967296 words | 4000000000 | 70 °C | PLASTIC/EPOXY | BGA | BGA100,10X17,40 | RECTANGULAR | GRID ARRAY | Obsolete | 5.81 | Yes | MLC NAND TYPE | Flash Memories | CMOS | BOTTOM | BALL | 1 mm | unknown | R-PBGA-B100 | Not Qualified | 1.8,3/3.3 V | COMMERCIAL | 0.05 mA | 4GX8 | 8 | 0.00005 A | 34359738368 bit | PARALLEL | FLASH | NO | NO | YES | 4K | 1M | 4K words | YES | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No E28F008SA-85 | Intel | Datasheet | 1000 | - | Min: 1 Mult: 1 | YES | 40 | 85 ns | INTEL CORP | Intel Corporation | E28F008SA-85 | 1048576 words | 1000000 | 70 °C | PLASTIC/EPOXY | TSOP1 | 10 X 20 MM, TSOP-40 | TSSOP40,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | TSOP | NOT SPECIFIED | 8.72 | No | 5 V | e0 | EAR99 | NOR TYPE | Tin/Lead (Sn/Pb) | DEEP POWER-DOWN | 8542.32.00.51 | Flash Memories | MOS | DUAL | GULL WING | NOT SPECIFIED | 1 | 0.5 mm | unknown | 40 | R-PDSO-G40 | Not Qualified | 5.5 V | 5 V | COMMERCIAL | 4.5 V | ASYNCHRONOUS | 0.05 mA | 1MX8 | 3-STATE | 1.2 mm | 8 | 0.0000012 A | 8388608 bit | PARALLEL | FLASH | 12 V | NO | NO | YES | 16 | 64K | YES | 18.4 mm | 10 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No M58BW16FB5T3F | Micron | Datasheet | - | - | Min: 1 Mult: 1 | YES | 80 | 55 ns | MICRON TECHNOLOGY INC | Micron Technology Inc | M58BW16FB5T3F | 524288 words | 512000 | 125 °C | -40 °C | PLASTIC/EPOXY | QFP | QFP-60 | QFP80,.7X.9,32 | RECTANGULAR | FLATPACK | Obsolete | QFP | 30 | 5.83 | Yes | 2.7 V | Automotive grade | Yes | EAR99 | NOR TYPE | SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; BOTTOM BOOT BLOCK | 8542.32.00.51 | Flash Memories | CMOS | QUAD | GULL WING | 260 | 1 | 0.8 mm | compliant | 80 | R-PQFP-G80 | Not Qualified | 3.3 V | 2.5/3.3,3/3.3 V | AUTOMOTIVE | 2.5 V | ASYNCHRONOUS | 0.05 mA | 512KX32 | 3.4 mm | 32 | 0.00015 A | 16777216 bit | AEC-Q100 | PARALLEL | FLASH | 3.3 V | NO | NO | YES | 8,31 | 2K,16K | BOTTOM | YES | 20 mm | 14 mm | ||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No M58BW16FB4T3F | Micron | Datasheet | 255 | - | Min: 1 Mult: 1 | YES | 80 | 45 ns | MICRON TECHNOLOGY INC | Micron Technology Inc | M58BW16FB4T3F | 524288 words | 512000 | 125 °C | -40 °C | PLASTIC/EPOXY | QFP | QFP, QFP80,.7X.9,32 | QFP80,.7X.9,32 | RECTANGULAR | FLATPACK | Obsolete | QFP | NOT SPECIFIED | 5.82 | Yes | 3.3 V | Automotive grade | Yes | EAR99 | NOR TYPE | SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE | 8542.32.00.51 | Flash Memories | CMOS | QUAD | GULL WING | NOT SPECIFIED | 1 | 0.8 mm | compliant | 80 | R-PQFP-G80 | Not Qualified | 3.6 V | 2.5/3.3,3/3.3 V | AUTOMOTIVE | 2.7 V | ASYNCHRONOUS | 0.05 mA | 512KX32 | 3.4 mm | 32 | 0.00015 A | 16777216 bit | AEC-Q100 | PARALLEL | FLASH | 3.3 V | NO | NO | YES | 8,31 | 2K,16K | BOTTOM | YES | 20 mm | 14 mm | ||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No M58BW32FB5T3F | Micron | Datasheet | 216 | - | Min: 1 Mult: 1 | YES | 80 | 55 ns | MICRON TECHNOLOGY INC | Micron Technology Inc | M58BW32FB5T3F | 1048576 words | 1000000 | 125 °C | -40 °C | PLASTIC/EPOXY | QFP | QFP-60 | QFP80,.7X.9,32 | RECTANGULAR | FLATPACK | Obsolete | QFP | 30 | 5.55 | Yes | 2.7 V | Automotive grade | Yes | 3A991.B.1.A | NOR TYPE | SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; BOTTOM BOOT BLOCK | 8542.32.00.51 | Flash Memories | CMOS | QUAD | GULL WING | 260 | 1 | 0.8 mm | compliant | 80 | R-PQFP-G80 | Not Qualified | 3.3 V | 3/3.3 V | AUTOMOTIVE | 2.5 V | ASYNCHRONOUS | 0.05 mA | 1MX32 | 3.4 mm | 32 | 0.00015 A | 33554432 bit | AEC-Q100 | PARALLEL | FLASH | 3.3 V | NO | NO | YES | 4,8,62 | 4K,2K,16K | 4 words | BOTTOM | YES | 20 mm | 14 mm | |||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No E28F008SA-120 | Intel | Datasheet | 274 | - | Min: 1 Mult: 1 | YES | 40 | 120 ns | INTEL CORP | Intel Corporation | E28F008SA-120 | 1048576 words | 1000000 | 70 °C | PLASTIC/EPOXY | TSOP1 | 10 X 20 MM, TSOP-40 | TSSOP40,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | TSOP | NOT SPECIFIED | 8.67 | No | 5 V | e0 | EAR99 | NOR TYPE | Tin/Lead (Sn/Pb) | DEEP POWER-DOWN | 8542.32.00.51 | Flash Memories | MOS | DUAL | GULL WING | NOT SPECIFIED | 1 | 0.5 mm | unknown | 40 | R-PDSO-G40 | Not Qualified | 5.5 V | 5 V | COMMERCIAL | 4.5 V | ASYNCHRONOUS | 0.05 mA | 1MX8 | 3-STATE | 1.2 mm | 8 | 0.0000012 A | 8388608 bit | PARALLEL | FLASH | 12 V | NO | NO | YES | 16 | 64K | YES | 18.4 mm | 10 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No AM29F160DB70EF | Cypress Semiconductor | Datasheet | - | - | Min: 1 Mult: 1 | YES | 48 | 70 ns | SPANSION INC | Spansion | AM29F160DB70EF | 3 | 1048576 words | 1000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TSSOP | LEAD FREE, MO-142DD, TSOP-48 | TSSOP48,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | Obsolete | TSOP1 | 40 | 5.69 | Yes | 5 V | e3 | Yes | EAR99 | NOR TYPE | Matte Tin (Sn) | MIN 1000K WRITE CYCLE; CAN ALSO BE CONFG AS 2M X 8; BOTTOM BOOT BLOCK | 8542.32.00.51 | Flash Memories | CMOS | DUAL | GULL WING | 260 | 1 | 0.5 mm | unknown | 48 | R-PDSO-G48 | Not Qualified | 5.5 V | 5 V | INDUSTRIAL | 4.5 V | ASYNCHRONOUS | 0.05 mA | 1MX16 | 1.2 mm | 16 | 0.000005 A | 16777216 bit | PARALLEL | FLASH | 5 V | 70 ms | 8 | YES | YES | YES | 1,2,1,31 | 16K,8K,32K,64K | YES | BOTTOM | YES | 18.4 mm | 12 mm | ||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No MT29F32G08ABCABH1-10IT:A | Micron | Datasheet | - | - | Min: 1 Mult: 1 | Surface Mount | YES | 100 | 100 | 20 ns | MICRON TECHNOLOGY INC | Micron Technology Inc | MT29F32G08ABCABH1-10IT:A | 4294967296 words | 4000000000 | 85 °C | -40 °C | PLASTIC/EPOXY | BGA | BGA100,10X17,40 | RECTANGULAR | GRID ARRAY | Obsolete | 5.82 | Compliant | Yes | SLC NAND TYPE | 85 °C | -40 °C | Flash Memories | CMOS | BOTTOM | BALL | 1 mm | compliant | R-PBGA-B100 | Not Qualified | 3.3 V | 1.8,3/3.3 V | INDUSTRIAL | Parallel, Serial | 3.6 V | 2.7 V | 3.7 GB | 50 mA | 0.05 mA | 4GX8 | 8 | 34 b | 32 Gb | 0.00001 A | 34359738368 bit | PARALLEL | Asynchronous | 8 b | FLASH | NO | NO | YES | 4K | 1M | 8K words | YES | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No HN58C1001T-15E | Renesas | Datasheet | - | - | Min: 1 Mult: 1 | YES | 32 | 150 ns | RENESAS TECHNOLOGY CORP | Renesas Electronics Corporation | HN58C1001T-15E | 131072 words | 128000 | 70 °C | PLASTIC/EPOXY | TSSOP | TSSOP, TSSOP32,.56,20 | TSSOP32,.56,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | Obsolete | TSOP | NOT SPECIFIED | 5.76 | Yes | 5 V | Yes | EAR99 | 8542.32.00.51 | EEPROMs | CMOS | DUAL | GULL WING | NOT SPECIFIED | 1 | 0.5 mm | unknown | 32 | R-PDSO-G32 | Not Qualified | 5.5 V | 5 V | COMMERCIAL | 4.5 V | ASYNCHRONOUS | 0.05 mA | 128KX8 | 1.2 mm | 8 | 0.00002 A | 1048576 bit | PARALLEL | EEPROM | 5 V | 10 ms | YES | YES | NO | 128 words | YES | 12.4 mm | 8 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No HN58C1001FP-15E | Renesas | Datasheet | - | - | Min: 1 Mult: 1 | YES | 32 | 150 ns | RENESAS TECHNOLOGY CORP | Renesas Electronics Corporation | HN58C1001FP-15E | 131072 words | 128000 | 70 °C | PLASTIC/EPOXY | SOP | SOP, SOP32,.56 | SOP32,.56 | RECTANGULAR | SMALL OUTLINE | Transferred | SOIC | 16 | 5.6 | Non-Compliant | Yes | 5 V | e4 | Yes | EAR99 | NICKEL PALLADIUM GOLD | 8542.32.00.51 | EEPROMs | CMOS | DUAL | GULL WING | 255 | 1 | 1.27 mm | unknown | 32 | R-PDSO-G32 | Not Qualified | 5.5 V | 5 V | COMMERCIAL | 4.5 V | ASYNCHRONOUS | 0.05 mA | 128KX8 | 3 mm | 8 | 0.00002 A | 1048576 bit | PARALLEL | EEPROM | 5 V | 10 ms | YES | YES | NO | 128 words | YES | 20.45 mm | 11.3 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No BQ4013LYMA-70N | Texas Instruments | Datasheet | 805 |
| Min: 1 Mult: 1 | 1 Week | Through Hole | Through Hole | 32-DIP Module (0.610, 15.49mm) | NO | 32 | 32-DIP Module (18.42x42.8) | 32 | 70 ns | BQ4013 | Texas INC | Texas | BQ4013LYMA-70N | Non-Volatile, RAM, SRAM | Texas Instruments | 131072 words | 128000 | 85 °C | -40 °C | Tube | PLASTIC/EPOXY | DIP | ROHS COMPLIANT, PLASTIC, DIP-32 | DIP32,.6 | RECTANGULAR | MICROELECTRONIC ASSEMBLY | Obsolete | MODULE | Obsolete | NOT SPECIFIED | 5.8 | Compliant | Yes | 8542320040 | 3.3 V | -40°C ~ 85°C (TA) | - | No | EAR99 | 85 °C | -40 °C | 8542.32.00.41 | SRAMs | NVSRAM (Non-Volatile SRAM) | 3V ~ 3.6V | DUAL | PIN/PEG | NOT SPECIFIED | 1 | 2.54 mm | compliant | 32 | R-PDMA-P32 | Not Qualified | Texas | 3.3 V | 3.6 V | 3.3 V | INDUSTRIAL | 3 V | Parallel | 3.6 V | 3 V | 128 kB | 50 mA | 50 mA | ASYNCHRONOUS | 0.05 mA | 70 ns | NVSRAM | Parallel | 8 b | 128KX8 | 9.53 mm | 8 | 70ns | 1 Mb | 0.001 A | 1048576 bit | PARALLEL | 8 b | NON-VOLATILE SRAM MODULE | 128K x 8 | 42.8 mm | 15.24 mm | No | Contains Lead |
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AT28C256-20PI
Atmel
Package:Memory
Price: please inquire
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AT28C256-25PC
Atmel
Package:Memory
Price: please inquire
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CAT28C512GI-15
ON Semiconductor
Package:Memory
Price: please inquire
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AT49LV001N-70VI
Atmel
Package:Memory
Price: please inquire
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K8D3216UBC-DI07
Samsung
Package:Memory
Price: please inquire
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AT28C256E-20TC
Atmel
Package:Memory
Price: please inquire
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M58BW32FB4T3F
Micron
Package:Memory
Price: please inquire
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AT28C256-20LM/883
Adesto Technologies
Package:Memory
Price: please inquire
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MT29F32G08CBABAWP-IT:B
Micron
Package:Memory
Price: please inquire
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MT29F32G08CBCBBH1-12:B
Micron
Package:Memory
Price: please inquire
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E28F008SA-85
Intel
Package:Memory
Price: please inquire
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M58BW16FB5T3F
Micron
Package:Memory
Price: please inquire
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M58BW16FB4T3F
Micron
Package:Memory
Price: please inquire
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M58BW32FB5T3F
Micron
Package:Memory
Price: please inquire
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E28F008SA-120
Intel
Package:Memory
Price: please inquire
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AM29F160DB70EF
Cypress Semiconductor
Package:Memory
Price: please inquire
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MT29F32G08ABCABH1-10IT:A
Micron
Package:Memory
Price: please inquire
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HN58C1001T-15E
Renesas
Package:Memory
Price: please inquire
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HN58C1001FP-15E
Renesas
Package:Memory
Price: please inquire
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BQ4013LYMA-70N
Texas Instruments
Package:Memory
29.727231