The category is 'Memory'
Memory (144)
- All Manufacturers
- Ihs Manufacturer
- JESD-30 Code
- Memory Density
- Memory IC Type
- Memory Width
- Number of Terminals
- Number of Words
- Number of Words Code
- Operating Temperature-Max
- Organization
- Package Code
- Supply Current-Max
- Supply Current-Max:
0.05 mA
Image | Part Number | Manufacturer | Datasheet | Availability | Pricing(USD) | Quantity | RoHS | Surface Mount | Number of Terminals | Access Time-Max | Ihs Manufacturer | Manufacturer | Manufacturer Part Number | Number of Words | Number of Words Code | Operating Temperature-Max | Operating Temperature-Min | Package Body Material | Package Code | Package Description | Package Equivalence Code | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Reflow Temperature-Max (s) | Risk Rank | RoHS | Rohs Code | Supply Voltage-Nom (Vsup) | Usage Level | JESD-609 Code | Pbfree Code | ECCN Code | Type | Terminal Finish | Additional Feature | HTS Code | Subcategory | Technology | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Terminal Pitch | Reach Compliance Code | Pin Count | JESD-30 Code | Qualification Status | Supply Voltage-Max (Vsup) | Power Supplies | Temperature Grade | Supply Voltage-Min (Vsup) | Operating Mode | Supply Current-Max | Organization | Output Characteristics | Seated Height-Max | Memory Width | Standby Current-Max | Memory Density | Screening Level | Parallel/Serial | I/O Type | Memory IC Type | Programming Voltage | Data Polling | Toggle Bit | Command User Interface | Number of Sectors/Size | Sector Size | Page Size | Boot Block | Common Flash Interface | Length | Width |
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 | Mfr Part No M58BW16FB4ZA3T | Micron | Datasheet | - | - | Min: 1 Mult: 1 | YES | 80 | 45 ns | NUMONYX | Numonyx Memory Solutions | M58BW16FB4ZA3T | 524288 words | 512000 | 125 °C | -40 °C | PLASTIC/EPOXY | LBGA | 10 X 12 MM, 1 MM PITCH, LBGA-80 | BGA80,8X10,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | Transferred | BGA | 5.48 | No | 3.3 V | EAR99 | NOR TYPE | SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; BOTTOM BOOT BLOCK | 8542.32.00.51 | Flash Memories | CMOS | BOTTOM | BALL | 1 | 1 mm | unknown | 80 | R-PBGA-B80 | Not Qualified | 3.6 V | 2.5/3.3,3/3.3 V | AUTOMOTIVE | 2.7 V | ASYNCHRONOUS | 0.05 mA | 512KX32 | 1.6 mm | 32 | 0.00015 A | 16777216 bit | PARALLEL | FLASH | 3.3 V | NO | NO | YES | 8,31 | 2K,16K | BOTTOM | YES | 12 mm | 10 mm | ||||||||||||
| Mfr Part No M58BW32FB4ZA3T | Micron | Datasheet | - | - | Min: 1 Mult: 1 | YES | 80 | 45 ns | STMICROELECTRONICS | STMicroelectronics | M58BW32FB4ZA3T | 524288 words | 512000 | 125 °C | -40 °C | PLASTIC/EPOXY | LBGA | 10 X 12 MM, 1 MM PITCH, LBGA-80 | BGA80,8X10,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | Transferred | BGA | 5.71 | No | 3.3 V | Automotive grade | EAR99 | NOR TYPE | 8542.32.00.51 | Flash Memories | CMOS | BOTTOM | BALL | 1 | 1 mm | not_compliant | 80 | R-PBGA-B80 | Not Qualified | 3.6 V | 3/3.3 V | AUTOMOTIVE | 2.7 V | SYNCHRONOUS | 0.05 mA | 512KX32 | 1.7 mm | 32 | 0.00015 A | 16777216 bit | AEC-Q100 | PARALLEL | FLASH | 3.3 V | NO | NO | YES | 4,8,62 | 4K,2K,16K | 4 words | BOTTOM | YES | 12 mm | 10 mm | ||||||||||
| Mfr Part No NM27C210Q-150 | National Semiconductor | Datasheet | 4 | - | Min: 1 Mult: 1 | NO | 40 | 150 ns | NATIONAL SEMICONDUCTOR CORP | Texas | NM27C210Q150 | 65536 words | 64000 | 70 °C | CERAMIC, GLASS-SEALED | WDIP | WDIP, DIP40,.6 | DIP40,.6 | RECTANGULAR | IN-LINE, WINDOW | Transferred | DIP | 5.26 | Non-Compliant | No | 5 V | e0 | EAR99 | Tin/Lead (Sn/Pb) | 8542.32.00.61 | EPROMs | CMOS | DUAL | THROUGH-HOLE | 1 | 2.54 mm | unknown | 40 | R-GDIP-T40 | Not Qualified | 5.5 V | 5 V | COMMERCIAL | 4.5 V | ASYNCHRONOUS | 0.05 mA | 64KX16 | 3-STATE | 5.969 mm | 16 | 0.0001 A | 1048576 bit | PARALLEL | COMMON | UVPROM | 15.24 mm | |||||||||||||||||||
| Mfr Part No M58WR064HB70ZB6E | Micron | Datasheet | - | - | Min: 1 Mult: 1 | YES | 56 | 70 ns | MICRON TECHNOLOGY INC | Micron Technology Inc | M58WR064HB70ZB6E | 4194304 words | 4000000 | 85 °C | -40 °C | PLASTIC/EPOXY | VFBGA | VFBGA, BGA56,7X8,30 | BGA56,7X8,30 | RECTANGULAR | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | Obsolete | BGA | 30 | 5.21 | Yes | 1.8 V | e1 | Yes | 3A991.B.1.A | NOR TYPE | TIN SILVER COPPER | SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE | 8542.32.00.51 | Flash Memories | CMOS | BOTTOM | BALL | 260 | 1 | 0.75 mm | compliant | 56 | R-PBGA-B56 | Not Qualified | 2 V | 1.8,1.8/2 V | INDUSTRIAL | 1.7 V | ASYNCHRONOUS | 0.05 mA | 4MX16 | 1 mm | 16 | 0.00005 A | 67108864 bit | PARALLEL | FLASH | 1.8 V | NO | NO | YES | 8,127 | 4K,32K | 4 words | BOTTOM | YES | 9 mm | 7.7 mm |