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Memory (119)

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JESD-30 Code
Number of Terminals
Operating Temperature-Max
Package Body Material
Package Code
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Part Life Cycle Code
Reach Compliance Code
Supply Current-Max
Surface Mount

Supply Current-Max:
0.06 mA

Part Number	Manufacturer	Datasheet	Availability	Pricing(USD)	Quantity	Factory Lead Time	Package / Case	Surface Mount	Number of Terminals	Access Time-Max	Address Bus Width (bit)	Approvals	Automotive	Base Product Number	Chip Density (bit)	Clock Frequency-Max (fCLK)	Data Bus Width (bit)	Data Retention	DRAM Type	ECCN (US)	EU RoHS	Factory Pack QuantityFactory Pack Quantity	Ihs Manufacturer	Interface Type	Lead Shape	Manufacturer	Manufacturer Package Code	Manufacturer Part Number	Maximum Access Time (ns)	Maximum Clock Rate (MHz)	Maximum Operating Supply Voltage (V)	Maximum Operating Temperature	Maximum Operating Temperature (°C)	Mfr	Minimum Operating Supply Voltage (V)	Minimum Operating Temperature	Minimum Operating Temperature (°C)	Moisture Sensitive	Moisture Sensitivity Levels	Mounting	Number of Bits/Word (bit)	Number of I/O Lines (bit)	Number of Internal Banks	Number of Words	Number of Words Code	Number of Words per Bank	Operating Current (mA)	Operating Temperature-Max	Operating Temperature-Min	Package	Package Body Material	Package Code	Package Description	Package Equivalence Code	Package Height	Package Length	Package Shape	Package Style	Package Width	Part Life Cycle Code	Part Package Code	PCB changed	PPAP	Product Status	Reflow Temperature-Max (s)	Risk Rank	RoHS	Rohs Code	Standard Package Name	Supplier Package	Supply Voltage-Max	Supply Voltage-Min	Supply Voltage-Nom (Vsup)	Typical Operating Supply Voltage (V)	Unit Weight	Usage Level	Packaging	Series	JESD-609 Code	Pbfree Code	Part Status	ECCN Code	Type	Terminal Finish	Additional Feature	HTS Code	Subcategory	Technology	Terminal Position	Terminal Form	Peak Reflow Temperature (Cel)	Number of Functions	Terminal Pitch	Reach Compliance Code	Current Rating	Pin Count	JESD-30 Code	Qualification Status	Brand Name	Operating Supply Voltage	Supply Voltage-Max (Vsup)	Power Supplies	Temperature Grade	Supply Voltage-Min (Vsup)	Memory Size	Operating Supply Current	Operating Mode	Supply Current-Max	Access Time	Organization	Output Characteristics	Seated Height-Max	Memory Width	Standby Current-Max	Memory Density	Screening Level	Parallel/Serial	I/O Type	Memory IC Type	Programming Voltage	Endurance	Write Cycle Time-Max (tWC)	Data Retention Time-Min	Standby Voltage-Min	Alternate Memory Width	Data Polling	Toggle Bit	Command User Interface	Output Enable	Number of Sectors/Size	Sector Size	Page Size	Cycle Time	Ready/Busy	Boot Block	Refresh Cycles	Common Flash Interface	Sequential Burst Length	Interleaved Burst Length	Mixed Memory Type	Height	Length	Width
Mfr Part No AT28C64B-15DC	Atmel	Datasheet	-	-	Min: 1 Mult: 1			NO	28	150 ns													ATMEL CORP			Atmel Corporation		AT28C64B-15DC																8192 words	8000			70 °C			CERAMIC, GLASS-SEALED	DIP	DIP, DIP28,.6	DIP28,.6			RECTANGULAR	IN-LINE		Obsolete	DIP				NOT SPECIFIED	5.23		No					5 V						e0	No		EAR99		Tin/Lead (Sn/Pb)	HARDWARE & SOFTWARE DATA PROTECTION; DATA RETENTION = 10 YEARS	8542.32.00.51	EEPROMs	CMOS	DUAL	THROUGH-HOLE	NOT SPECIFIED	1	2.54 mm	compliant		28	R-GDIP-T28	Not Qualified			5.5 V	5 V	COMMERCIAL	4.5 V			ASYNCHRONOUS	0.06 mA		8KX8	3-STATE	5.72 mm	8	0.0001 A	65536 bit		PARALLEL		EEPROM	5 V	100000 Write/Erase Cycles	2 ms	10			YES	YES	NO				64 words										37.25 mm	15.24 mm
Mfr Part No AT28C64B-15DM/883	Atmel	Datasheet	-	-	Min: 1 Mult: 1			NO	28	150 ns													ATMEL CORP			Atmel Corporation		AT28C64B-15DM/883																8192 words	8000			125 °C	-55 °C		CERAMIC, GLASS-SEALED	DIP	DIP, DIP28,.6	DIP28,.6			RECTANGULAR	IN-LINE		Obsolete	DIP				NOT SPECIFIED	5.77		No					5 V			Military grade			e0	No		3A001.A.2.C		Tin/Lead (Sn/Pb)	HARDWARE & SOFTWARE DATA PROTECTION; DATA RETENTION = 10 YEARS	8542.32.00.51	EEPROMs	CMOS	DUAL	THROUGH-HOLE	NOT SPECIFIED	1	2.54 mm	unknown		28	R-GDIP-T28	Not Qualified			5.5 V	5 V	MILITARY	4.5 V			ASYNCHRONOUS	0.06 mA		8KX8	3-STATE	5.72 mm	8	0.0002 A	65536 bit	MIL-STD-883 Class B (Modified)	PARALLEL		EEPROM	5 V	100000 Write/Erase Cycles	2 ms	10			YES	YES	NO				64 words										37.25 mm	15.24 mm
Mfr Part No X28HC256JI12	Xicor	Datasheet	-	-	Min: 1 Mult: 1			YES	32	120 ns													XICOR INC			Xicor Inc		X28HC256JI-12																32768 words	32000			85 °C	-40 °C		PLASTIC/EPOXY	QCCJ	QCCJ, LDCC32,.5X.6	LDCC32,.5X.6			RECTANGULAR	CHIP CARRIER		Transferred						8.57		No					5 V						e0					Tin/Lead (Sn/Pb)	100000 ENDURANCE WRITE CYCLES; 100 YEARS DATA RETENTION		EEPROMs	CMOS	QUAD	J BEND		1	1.27 mm	unknown			R-PQCC-J32	Not Qualified			5.5 V	5 V	INDUSTRIAL	4.5 V			ASYNCHRONOUS	0.06 mA		32KX8	3-STATE	3.56 mm	8	0.0005 A	262144 bit		PARALLEL		EEPROM	5 V	1000000 Write/Erase Cycles	5 ms	100			YES	YES	NO				128 words										13.97 mm	11.43 mm
Mfr Part No X28HC256P-12	Intersil (Renesas Electronics America)	Datasheet	-	-	Min: 1 Mult: 1			NO	28	120 ns													XICOR INC			Xicor Inc		X28HC256P-12																32768 words	32000			70 °C			PLASTIC/EPOXY	DIP	DIP, DIP28,.6	DIP28,.6			RECTANGULAR	IN-LINE		Transferred						5.61							5 V												100000 ENDURANCE WRITE CYCLES; 100 YEARS DATA RETENTION		EEPROMs	CMOS	DUAL	THROUGH-HOLE		1	2.54 mm	unknown			R-PDIP-T28	Not Qualified			5.5 V	5 V	COMMERCIAL	4.5 V			ASYNCHRONOUS	0.06 mA		32KX8	3-STATE	4.82 mm	8	0.0005 A	262144 bit		PARALLEL		EEPROM	5 V	1000000 Write/Erase Cycles	5 ms	100			YES	YES	NO				128 words										36.45 mm	15.24 mm
Mfr Part No AM29LV320MT120REI	AMD	Datasheet	-	-	Min: 1 Mult: 1			YES	48	120 ns													ADVANCED MICRO DEVICES INC			AMD		AM29LV320MT120REI																2097152 words	2000000			85 °C	-40 °C		PLASTIC/EPOXY	TSOP1	TSOP1, TSSOP48,.8,20	TSSOP48,.8,20			RECTANGULAR	SMALL OUTLINE, THIN PROFILE		Transferred	TSOP1					5.16		No					3.3 V						e0			3A991.B.1.A	NOR TYPE	Tin/Lead (Sn/Pb)		8542.32.00.51	Flash Memories	CMOS	DUAL	GULL WING		1	0.5 mm	unknown		48	R-PDSO-G48	Not Qualified			3.6 V	3.3 V	INDUSTRIAL	3 V			ASYNCHRONOUS	0.06 mA		2MX16		1.2 mm	16	0.000005 A	33554432 bit		PARALLEL		FLASH	3 V					8	YES	YES	YES		8,63	8K,64K	4/8 words		YES	TOP		YES					18.4 mm	12 mm
Mfr Part No IS64C6416AL-15TA3	Integrated Silicon Solution, Inc. (ISSI)	Datasheet	-	-	Min: 1 Mult: 1			YES	44	15 ns													INTEGRATED SILICON SOLUTION INC			Integrated Silicon Solution Inc		IS64C6416AL-15TA3											3					65536 words	64000			125 °C	-40 °C		PLASTIC/EPOXY	TSOP2	PLASTIC, TSOP2-44	TSOP44,.46,32			RECTANGULAR	SMALL OUTLINE, THIN PROFILE		Obsolete	TSOP2				NOT SPECIFIED	5.64		No					5 V			Automotive grade			e0	No		3A991.B.2.B		Tin/Lead (Sn/Pb)		8542.32.00.41	SRAMs	CMOS	DUAL	GULL WING	NOT SPECIFIED	1	0.8 mm	compliant		44	R-PDSO-G44	Not Qualified			5.5 V	5 V	AUTOMOTIVE	4.5 V			ASYNCHRONOUS	0.06 mA		64KX16	3-STATE	1.2 mm	16	0.000125 A	1048576 bit	AEC-Q100	PARALLEL	COMMON	STANDARD SRAM					2 V																		18.415 mm	10.16 mm
Mfr Part No AM29LV640MH120RPCI	AMD	Datasheet	-	-	Min: 1 Mult: 1			YES	64	120 ns													ADVANCED MICRO DEVICES INC			AMD		AM29LV640MH120RPCI																4194304 words	4000000			85 °C	-40 °C		PLASTIC/EPOXY	LBGA	13 X 11 MM, 1 MM PITCH, BGA-64	BGA64,8X8,40			RECTANGULAR	GRID ARRAY, LOW PROFILE		Transferred	BGA					5.25		No					3.3 V						e0			3A991.B.1.A	NOR TYPE	Tin/Lead (Sn/Pb)		8542.32.00.51	Flash Memories	CMOS	BOTTOM	BALL		1	1 mm	unknown		64	R-PBGA-B64	Not Qualified			3.6 V	1.8/3.3,3/3.3 V	INDUSTRIAL	3 V			ASYNCHRONOUS	0.06 mA		4MX16		1.4 mm	16	0.000005 A	67108864 bit		PARALLEL		FLASH	3 V					8	YES	YES	YES		128	64K	4/8 words		YES	BOTTOM/TOP		YES					13 mm	11 mm
Mfr Part No GLS34HF32A4-70-4E-L1PE	Greenliant	Datasheet	-	-	Min: 1 Mult: 1			YES	56	70 ns				098830									GREENLIANT SYSTEMS LTD			Greenliant Systems Ltd		GLS34HF32A4-70-4E-L1PE						Molex														85 °C	-20 °C	Bulk	PLASTIC/EPOXY	FBGA	FBGA, BGA56,8X8,32	BGA56,8X8,32			SQUARE	GRID ARRAY, FINE PITCH		Contact Manufacturer				Active		5.67		Yes					3 V					*									Other Memory ICs	CMOS	BOTTOM	BALL			0.8 mm	compliant			S-PBGA-B56	Not Qualified				3 V	OTHER					0.06 mA						0.000115 A					MEMORY CIRCUIT																					FLASH+PSRAM
Mfr Part No 72T3675L5BBI	Renesas	Datasheet	-	-	Min: 1 Mult: 1			YES	208	3.6 ns						200 MHz							INTEGRATED DEVICE TECHNOLOGY INC			Integrated Device Technology Inc	BB208	72T3675L5BBI											3					8192 words	8000			85 °C	-40 °C		PLASTIC/EPOXY	BGA	17 X 17 MM, 1 MM PITCH, PLASTIC, BGA-208	BGA208,16X16,40			SQUARE	GRID ARRAY		Obsolete	PBGA				20	5.67		No					2.5 V						e0	No		EAR99		Tin/Lead (Sn63Pb37)	ASYNCHRONOUS OPERATION ALSO POSSIBLE	8542.32.00.71	FIFOs	CMOS	BOTTOM	BALL	225	1	1 mm	not_compliant		208	S-PBGA-B208	Not Qualified	Integrated Device Technology		2.625 V	1.5/2.5,2.5 V	INDUSTRIAL	2.375 V			SYNCHRONOUS	0.06 mA		8KX36		1.97 mm	36	0.01 A	294912 bit		PARALLEL		OTHER FIFO										YES				5 ns									17 mm	17 mm
Mfr Part No X28C256DI-25	Xicor	Datasheet	-	-	Min: 1 Mult: 1			NO	28	250 ns													XICOR INC			Xicor Inc		X28C256DI-25																32768 words	32000			85 °C	-40 °C		CERAMIC, GLASS-SEALED	DIP	HERMETIC SEALED, CERDIP-28	DIP28,.6			RECTANGULAR	IN-LINE		Obsolete					NOT SPECIFIED	8.54		No					5 V						e0					Tin/Lead (Sn/Pb)	PAGE WRITE		EEPROMs	CMOS	DUAL	THROUGH-HOLE	NOT SPECIFIED	1	2.54 mm	unknown			R-GDIP-T28	Not Qualified			5.5 V	5 V	INDUSTRIAL	4.5 V			ASYNCHRONOUS	0.06 mA		32KX8	3-STATE	5.9 mm	8	0.0005 A	262144 bit		PARALLEL		EEPROM	5 V	100000 Write/Erase Cycles	10 ms				YES	YES	NO				64 words										37.15 mm	15.24 mm
Mfr Part No X28HC256SI-15	Renesas	Datasheet	-	-	Min: 1 Mult: 1			YES	28	150 ns													INTERSIL CORP			Intersil Corporation		X28HC256SI-15											3					32768 words	32000			85 °C	-40 °C		PLASTIC/EPOXY	SOP	SOP, SOP28,.4	SOP28,.4			RECTANGULAR	SMALL OUTLINE		Obsolete	SOIC				NOT SPECIFIED	5.33		No					5 V						e0	No		EAR99		Tin/Lead (Sn/Pb)	100000 ENDURANCE WRITE CYCLES; 100 YEARS DATA RETENTION	8542.32.00.51	EEPROMs	CMOS	DUAL	GULL WING	240	1	1.27 mm	not_compliant		28	R-PDSO-G28	Not Qualified			5.5 V	5 V	INDUSTRIAL	4.5 V			ASYNCHRONOUS	0.06 mA		32KX8		2.65 mm	8	0.0005 A	262144 bit		PARALLEL		EEPROM	5 V	1000000 Write/Erase Cycles	5 ms	100			YES	YES	NO				128 words										17.9 mm	7.5 mm
Mfr Part No X28HC256JZ-90T1	Intersil (Renesas Electronics America)	Datasheet	-	-	Min: 1 Mult: 1	21 Weeks	PLCC-32	YES	32	90 ns								100 Year				750	INTERSIL CORP	Parallel				X28HC256JZ-90T1				+ 70 C				0 C		Yes	3					32768 words	32000			70 °C			PLASTIC/EPOXY	QCCJ	QCCJ, LDCC32,.5X.6	LDCC32,.5X.6			RECTANGULAR	CHIP CARRIER		Unknown	PDIP, PLCC, SOIC				40	5.46	Details				5.5 V	4.5 V	5 V		0.049031 oz		Reel		e3			EAR99		Matte Tin (Sn) - annealed		8542.32.00.51		CMOS	QUAD	J BEND	260	1	1.27 mm	compliant		28, 32, 28	R-PQCC-J32	Not Qualified	Intersil	5 V	5.5 V	5 V	COMMERCIAL	4.5 V	256 kbit	60 mA	ASYNCHRONOUS	0.06 mA	90 ns	32 k x 8		3.55 mm	8	0.0005 A	262144 bit		PARALLEL		EEPROM	4.5 V to 5.5 V	1000000 Write/Erase Cycles	5 ms				YES	YES	NO				128 words									0 mm	14 mm	11.4 mm
Mfr Part No K4S280832O-LC60	Samsung Semiconductor	Datasheet	-	-	Min: 1 Mult: 1			YES	54	5 ns	13		No		128M	166 MHz	8		SDRAM	EAR99	Compliant		SAMSUNG SEMICONDUCTOR INC	LVTTL	Gull-wing	Samsung Semiconductor		K4S280832O-LC60	5	333	3.6		70		3		0			Surface Mount	8	8	4	16777216 words	16000000	4M	60	85 °C			PLASTIC/EPOXY	TSOP	TSOP, TSOP54,.46,32	TSOP54,.46,32	1	22.62(Max)	RECTANGULAR	SMALL OUTLINE, THIN PROFILE	10.16	Obsolete		54	No			5.84		Yes	SOP	TSOP-II			3.3 V	3.3							Obsolete						DRAMs	CMOS	DUAL	GULL WING			0.8 mm	unknown		54	R-PDSO-G54	Not Qualified				3.3 V	OTHER					0.06 mA		16Mx8	3-STATE		8	0.002 A	134217728 bit			COMMON	SYNCHRONOUS DRAM																	4096		1,2,4,8,FP	1,2,4,8
Mfr Part No 72811L25PFI	Renesas	Datasheet	-	-	Min: 1 Mult: 1			YES	64	15 ns						40 MHz							INTEGRATED DEVICE TECHNOLOGY INC			Integrated Device Technology Inc	PN64	72811L25PFI											3					512 words	512			85 °C	-40 °C		PLASTIC/EPOXY	LQFP	TQFP-64	QFP64,.66SQ,32			SQUARE	FLATPACK, LOW PROFILE		Obsolete	TQFP				20	5.38		No					5 V						e0	No		EAR99		Tin/Lead (Sn85Pb15)		8542.32.00.71	FIFOs	CMOS	QUAD	GULL WING	240	2	0.8 mm	not_compliant		64	S-PQFP-G64	Not Qualified	Integrated Device Technology		5.5 V	5 V	INDUSTRIAL	4.5 V			SYNCHRONOUS	0.06 mA		512X9		1.6 mm	9	0.01 A	4608 bit		PARALLEL		OTHER FIFO										YES				25 ns									14 mm	14 mm
Mfr Part No AM29F017D-70EC	AMD	Datasheet	-	-	Min: 1 Mult: 1			YES	48	70 ns													ADVANCED MICRO DEVICES INC			McGill		100/BP-2																2097152 words	2000000			70 °C			PLASTIC/EPOXY	TSOP1	TSOP1, TSSOP48,.8,20	TSSOP48,.8,20			RECTANGULAR	SMALL OUTLINE, THIN PROFILE		Transferred	TSOP1					5.31		No					5 V						e0			EAR99	NOR TYPE	Tin/Lead (Sn/Pb)	MINIMUM 1000K PROGRAM/ERASE CYCLE ;20 YEAR DATA RETENTION	8542.32.00.51	Flash Memories	CMOS	DUAL	GULL WING		1	0.5 mm	unknown		48	R-PDSO-G48	Not Qualified			5.5 V	5 V	COMMERCIAL	4.5 V			ASYNCHRONOUS	0.06 mA		2MX8		1.2 mm	8	0.000005 A	16777216 bit		PARALLEL		FLASH	5 V			20			YES	YES	YES		32	64K			YES			YES					18.4 mm	12 mm
Mfr Part No AM29F800BT90SD	AMD	Datasheet	-	-	Min: 1 Mult: 1			YES	44	90 ns		CE, CSA, UL											ADVANCED MICRO DEVICES INC			Cutler Hammer, Div of Eaton Corp		PDG33M0600D5YN												Panel				524288 words	512000			70 °C			PLASTIC/EPOXY	SOP		SOP44,.63			RECTANGULAR	SMALL OUTLINE		Transferred						5.78		Yes					5 V										NOR TYPE				Flash Memories	CMOS	DUAL	GULL WING			1.27 mm	unknown	600 A		R-PDSO-G44	Not Qualified				5 V	COMMERCIAL					0.06 mA		512KX16			16	0.000005 A	8388608 bit		PARALLEL		FLASH		1000000 Write/Erase Cycles				8	YES	YES	YES		1,2,1,15	16K,8K,32K,64K			YES	TOP
Mfr Part No AM29F800B-150EC	AMD	Datasheet	-	-	Min: 1 Mult: 1			YES	48	150 ns													ADVANCED MICRO DEVICES INC			AMD		AM29F800B-150EC																524288 words	512000			70 °C			PLASTIC/EPOXY	TSOP1	TSOP1, TSSOP48,.8,20	TSSOP48,.8,20			RECTANGULAR	SMALL OUTLINE, THIN PROFILE		Obsolete	TSOP				NOT SPECIFIED	8.07		No					5 V						e0			EAR99	NOR TYPE	Tin/Lead (Sn/Pb)	100K WRITE/ERASE CYCLES MIN	8542.32.00.51	Flash Memories	CMOS	DUAL	GULL WING	NOT SPECIFIED	1	0.5 mm	unknown		48	R-PDSO-G48	Not Qualified			5.5 V	5 V	COMMERCIAL	4.5 V			ASYNCHRONOUS	0.06 mA		512KX16	3-STATE	1.2 mm	16	0.000005 A	8388608 bit		PARALLEL		FLASH	5 V	100000 Write/Erase Cycles				8	YES	YES	YES		1,2,1,15	16K,8K,32K,64K			YES	BOTTOM							18.4 mm	12 mm
Mfr Part No 72V815L15PFI	Renesas	Datasheet	-	-	Min: 1 Mult: 1			YES	128	10 ns													INTEGRATED DEVICE TECHNOLOGY INC			Integrated Device Technology Inc	PK128	72V815L15PFI											3					512 words	512			85 °C	-40 °C		PLASTIC/EPOXY	LFQFP	TQFP-128	QFP128,.63X.87,20			RECTANGULAR	FLATPACK, LOW PROFILE, FINE PITCH		Obsolete	TQFP				NOT SPECIFIED	5.45	Non-Compliant	No					3.3 V						e0	No		EAR99		Tin/Lead (Sn85Pb15)		8542.32.00.71	FIFOs	CMOS	QUAD	GULL WING	225	1	0.5 mm	not_compliant		128	R-PQFP-G128	Not Qualified	Integrated Device Technology		3.6 V	3.3 V	INDUSTRIAL	3 V			SYNCHRONOUS	0.06 mA		512X18		1.6 mm	18	0.01 A	9216 bit		PARALLEL		OTHER FIFO										YES				15 ns									20 mm	14 mm
Mfr Part No 5962-8961406MXA	E2V	Datasheet	-	-	Min: 1 Mult: 1			NO	32	120 ns				D38999/20SD									WAFERSCALE INTEGRATION INC			Waferscale Integration Inc		5962-8961406MXA						Corsair										131072 words	128000			125 °C	-55 °C	Bag	CERAMIC, GLASS-SEALED	WDIP	WINDOWED, CERAMIC, DIP-32	DIP32,.6			RECTANGULAR	IN-LINE, WINDOW		Obsolete				Active	NOT SPECIFIED	5.48		No					5 V			Military grade		*	e0					Tin/Lead (Sn/Pb) - hot dipped			EPROMs	CMOS	DUAL	THROUGH-HOLE	NOT SPECIFIED	1	2.54 mm	unknown			R-GDIP-T32	Not Qualified			5.5 V	5 V	MILITARY	4.5 V			ASYNCHRONOUS	0.06 mA		128KX8	3-STATE	5.588 mm	8	0.0001 A	1048576 bit	MIL-STD-883	PARALLEL	COMMON	UVPROM																							42.1005 mm	15.24 mm
Mfr Part No 5962-8764804XA	Micross	Datasheet	-	-	Min: 1 Mult: 1			NO	28	120 ns													TELEDYNE E2V (UK) LTD			e2v technologies		5962-8764804XA																65536 words	64000			125 °C	-55 °C		CERAMIC, GLASS-SEALED	WDIP	WDIP, DIP28,.6	DIP28,.6			RECTANGULAR	IN-LINE, WINDOW		Active						5.65							5 V			Military grade			e0			EAR99		TIN LEAD		8542.32.00.61	EPROMs	CMOS	DUAL	THROUGH-HOLE		1	2.54 mm	compliant			R-GDIP-T28	Not Qualified			5.5 V	5 V	MILITARY	4.5 V			ASYNCHRONOUS	0.06 mA		64KX8	3-STATE	5.72 mm	8	0.000325 A	524288 bit	38535Q/M;38534H;883B	PARALLEL	COMMON	UVPROM																							37.25 mm	15.24 mm

Memory (119)