The category is 'Memory'
Memory (119)
- All Manufacturers
- Ihs Manufacturer
- JESD-30 Code
- Number of Terminals
- Operating Temperature-Max
- Package Body Material
- Package Code
- Package Shape
- Package Style
- Part Life Cycle Code
- Reach Compliance Code
- Supply Current-Max
- Surface Mount
- Supply Current-Max:
0.06 mA
Image | Part Number | Manufacturer | Datasheet | Availability | Pricing(USD) | Quantity | RoHS | Surface Mount | Number of Terminals | Access Time-Max | Base Product Number | Clock Frequency-Max (fCLK) | Ihs Manufacturer | Manufacturer | Manufacturer Package Code | Manufacturer Part Number | Mfr | Moisture Sensitivity Levels | Number of Words | Number of Words Code | Operating Temperature-Max | Operating Temperature-Min | Package | Package Body Material | Package Code | Package Description | Package Equivalence Code | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Product Status | Reflow Temperature-Max (s) | Risk Rank | RoHS | Rohs Code | Supply Voltage-Nom (Vsup) | Usage Level | Series | JESD-609 Code | Pbfree Code | ECCN Code | Type | Terminal Finish | Additional Feature | HTS Code | Subcategory | Technology | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Terminal Pitch | Reach Compliance Code | Pin Count | JESD-30 Code | Qualification Status | Brand Name | Supply Voltage-Max (Vsup) | Power Supplies | Temperature Grade | Supply Voltage-Min (Vsup) | Number of Ports | Operating Mode | Supply Current-Max | Organization | Output Characteristics | Seated Height-Max | Memory Width | Standby Current-Max | Memory Density | Screening Level | Parallel/Serial | I/O Type | Memory IC Type | Programming Voltage | Endurance | Write Cycle Time-Max (tWC) | Data Retention Time-Min | Standby Voltage-Min | Alternate Memory Width | Data Polling | Toggle Bit | Command User Interface | Output Enable | Number of Sectors/Size | Sector Size | Page Size | Cycle Time | Ready/Busy | Boot Block | Refresh Cycles | Common Flash Interface | Sequential Burst Length | Interleaved Burst Length | Access Mode | Mixed Memory Type | Length | Width |
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 | Mfr Part No GLS34HF32A4-70-4E-L1PE | Greenliant | Datasheet | - | - | Min: 1 Mult: 1 | YES | 56 | 70 ns | 098830 | GREENLIANT SYSTEMS LTD | Greenliant Systems Ltd | GLS34HF32A4-70-4E-L1PE | Molex | 85 °C | -20 °C | Bulk | PLASTIC/EPOXY | FBGA | FBGA, BGA56,8X8,32 | BGA56,8X8,32 | SQUARE | GRID ARRAY, FINE PITCH | Contact Manufacturer | Active | 5.67 | Yes | 3 V | * | Other Memory ICs | CMOS | BOTTOM | BALL | 0.8 mm | compliant | S-PBGA-B56 | Not Qualified | 3 V | OTHER | 0.06 mA | 0.000115 A | MEMORY CIRCUIT | FLASH+PSRAM | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No AM29LV640MH120RPCI | AMD | Datasheet | - | - | Min: 1 Mult: 1 | YES | 64 | 120 ns | ADVANCED MICRO DEVICES INC | AMD | AM29LV640MH120RPCI | 4194304 words | 4000000 | 85 °C | -40 °C | PLASTIC/EPOXY | LBGA | 13 X 11 MM, 1 MM PITCH, BGA-64 | BGA64,8X8,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | Transferred | BGA | 5.25 | No | 3.3 V | e0 | 3A991.B.1.A | NOR TYPE | Tin/Lead (Sn/Pb) | 8542.32.00.51 | Flash Memories | CMOS | BOTTOM | BALL | 1 | 1 mm | unknown | 64 | R-PBGA-B64 | Not Qualified | 3.6 V | 1.8/3.3,3/3.3 V | INDUSTRIAL | 3 V | ASYNCHRONOUS | 0.06 mA | 4MX16 | 1.4 mm | 16 | 0.000005 A | 67108864 bit | PARALLEL | FLASH | 3 V | 8 | YES | YES | YES | 128 | 64K | 4/8 words | YES | BOTTOM/TOP | YES | 13 mm | 11 mm | |||||||||||||||||||||||||||||||
| Mfr Part No X28C256DI-25 | Xicor | Datasheet | - | - | Min: 1 Mult: 1 | NO | 28 | 250 ns | XICOR INC | Xicor Inc | X28C256DI-25 | 32768 words | 32000 | 85 °C | -40 °C | CERAMIC, GLASS-SEALED | DIP | HERMETIC SEALED, CERDIP-28 | DIP28,.6 | RECTANGULAR | IN-LINE | Obsolete | NOT SPECIFIED | 8.54 | No | 5 V | e0 | Tin/Lead (Sn/Pb) | PAGE WRITE | EEPROMs | CMOS | DUAL | THROUGH-HOLE | NOT SPECIFIED | 1 | 2.54 mm | unknown | R-GDIP-T28 | Not Qualified | 5.5 V | 5 V | INDUSTRIAL | 4.5 V | ASYNCHRONOUS | 0.06 mA | 32KX8 | 3-STATE | 5.9 mm | 8 | 0.0005 A | 262144 bit | PARALLEL | EEPROM | 5 V | 100000 Write/Erase Cycles | 10 ms | YES | YES | NO | 64 words | 37.15 mm | 15.24 mm | ||||||||||||||||||||||||||||||||||||
| Mfr Part No 72T3675L5BBI | Renesas | Datasheet | - | - | Min: 1 Mult: 1 | YES | 208 | 3.6 ns | 200 MHz | INTEGRATED DEVICE TECHNOLOGY INC | Integrated Device Technology Inc | BB208 | 72T3675L5BBI | 3 | 8192 words | 8000 | 85 °C | -40 °C | PLASTIC/EPOXY | BGA | 17 X 17 MM, 1 MM PITCH, PLASTIC, BGA-208 | BGA208,16X16,40 | SQUARE | GRID ARRAY | Obsolete | PBGA | 20 | 5.67 | No | 2.5 V | e0 | No | EAR99 | Tin/Lead (Sn63Pb37) | ASYNCHRONOUS OPERATION ALSO POSSIBLE | 8542.32.00.71 | FIFOs | CMOS | BOTTOM | BALL | 225 | 1 | 1 mm | not_compliant | 208 | S-PBGA-B208 | Not Qualified | Integrated Device Technology | 2.625 V | 1.5/2.5,2.5 V | INDUSTRIAL | 2.375 V | SYNCHRONOUS | 0.06 mA | 8KX36 | 1.97 mm | 36 | 0.01 A | 294912 bit | PARALLEL | OTHER FIFO | YES | 5 ns | 17 mm | 17 mm | |||||||||||||||||||||||||||||||||
| Mfr Part No 5962-8961406MXA | E2V | Datasheet | - | - | Min: 1 Mult: 1 | NO | 32 | 120 ns | D38999/20SD | WAFERSCALE INTEGRATION INC | Waferscale Integration Inc | 5962-8961406MXA | Corsair | 131072 words | 128000 | 125 °C | -55 °C | Bag | CERAMIC, GLASS-SEALED | WDIP | WINDOWED, CERAMIC, DIP-32 | DIP32,.6 | RECTANGULAR | IN-LINE, WINDOW | Obsolete | Active | NOT SPECIFIED | 5.48 | No | 5 V | Military grade | * | e0 | Tin/Lead (Sn/Pb) - hot dipped | EPROMs | CMOS | DUAL | THROUGH-HOLE | NOT SPECIFIED | 1 | 2.54 mm | unknown | R-GDIP-T32 | Not Qualified | 5.5 V | 5 V | MILITARY | 4.5 V | ASYNCHRONOUS | 0.06 mA | 128KX8 | 3-STATE | 5.588 mm | 8 | 0.0001 A | 1048576 bit | MIL-STD-883 | PARALLEL | COMMON | UVPROM | 42.1005 mm | 15.24 mm | ||||||||||||||||||||||||||||||||||||
| Mfr Part No 5962-8764804XA | Micross | Datasheet | - | - | Min: 1 Mult: 1 | NO | 28 | 120 ns | TELEDYNE E2V (UK) LTD | e2v technologies | 5962-8764804XA | 65536 words | 64000 | 125 °C | -55 °C | CERAMIC, GLASS-SEALED | WDIP | WDIP, DIP28,.6 | DIP28,.6 | RECTANGULAR | IN-LINE, WINDOW | Active | 5.65 | 5 V | Military grade | e0 | EAR99 | TIN LEAD | 8542.32.00.61 | EPROMs | CMOS | DUAL | THROUGH-HOLE | 1 | 2.54 mm | compliant | R-GDIP-T28 | Not Qualified | 5.5 V | 5 V | MILITARY | 4.5 V | ASYNCHRONOUS | 0.06 mA | 64KX8 | 3-STATE | 5.72 mm | 8 | 0.000325 A | 524288 bit | 38535Q/M;38534H;883B | PARALLEL | COMMON | UVPROM | 37.25 mm | 15.24 mm | ||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No 72V815L15PFI | Renesas | Datasheet | - | - | Min: 1 Mult: 1 | YES | 128 | 10 ns | INTEGRATED DEVICE TECHNOLOGY INC | Integrated Device Technology Inc | PK128 | 72V815L15PFI | 3 | 512 words | 512 | 85 °C | -40 °C | PLASTIC/EPOXY | LFQFP | TQFP-128 | QFP128,.63X.87,20 | RECTANGULAR | FLATPACK, LOW PROFILE, FINE PITCH | Obsolete | TQFP | NOT SPECIFIED | 5.45 | Non-Compliant | No | 3.3 V | e0 | No | EAR99 | Tin/Lead (Sn85Pb15) | 8542.32.00.71 | FIFOs | CMOS | QUAD | GULL WING | 225 | 1 | 0.5 mm | not_compliant | 128 | R-PQFP-G128 | Not Qualified | Integrated Device Technology | 3.6 V | 3.3 V | INDUSTRIAL | 3 V | SYNCHRONOUS | 0.06 mA | 512X18 | 1.6 mm | 18 | 0.01 A | 9216 bit | PARALLEL | OTHER FIFO | YES | 15 ns | 20 mm | 14 mm | ||||||||||||||||||||||||||||||||||
| Mfr Part No X28HC256J-12 | Renesas | Datasheet | - | - | Min: 1 Mult: 1 | YES | 32 | 120 ns | XICOR INC | Xicor Inc | X28HC256J-12 | 32768 words | 32000 | 70 °C | PLASTIC/EPOXY | QCCJ | QCCJ, LDCC32,.5X.6 | LDCC32,.5X.6 | RECTANGULAR | CHIP CARRIER | Transferred | 8.57 | No | 5 V | e0 | Tin/Lead (Sn/Pb) | 100000 ENDURANCE WRITE CYCLES; 100 YEARS DATA RETENTION | EEPROMs | CMOS | QUAD | J BEND | 1 | 1.27 mm | unknown | R-PQCC-J32 | Not Qualified | 5.5 V | 5 V | COMMERCIAL | 4.5 V | ASYNCHRONOUS | 0.06 mA | 32KX8 | 3-STATE | 3.56 mm | 8 | 0.0005 A | 262144 bit | PARALLEL | EEPROM | 5 V | 1000000 Write/Erase Cycles | 5 ms | 100 | YES | YES | NO | 128 words | 13.97 mm | 11.43 mm | ||||||||||||||||||||||||||||||||||||||
| Mfr Part No X28HC256J-15 | Renesas | Datasheet | - | - | Min: 1 Mult: 1 | YES | 32 | 150 ns | INTERSIL CORP | Intersil Corporation | X28HC256J-15 | 3 | 32768 words | 32000 | 70 °C | PLASTIC/EPOXY | QCCJ | QCCJ, LDCC32,.5X.6 | LDCC32,.5X.6 | RECTANGULAR | CHIP CARRIER | Obsolete | QFJ | NOT SPECIFIED | 5.45 | No | 5 V | e0 | No | EAR99 | Tin/Lead (Sn/Pb) | 100000 ENDURANCE WRITE CYCLES; 100 YEARS DATA RETENTION | 8542.32.00.51 | EEPROMs | CMOS | QUAD | J BEND | 240 | 1 | 1.27 mm | not_compliant | 32 | R-PQCC-J32 | Not Qualified | 5.5 V | 5 V | COMMERCIAL | 4.5 V | ASYNCHRONOUS | 0.06 mA | 32KX8 | 3.55 mm | 8 | 0.0005 A | 262144 bit | PARALLEL | EEPROM | 5 V | 1000000 Write/Erase Cycles | 5 ms | 100 | YES | YES | NO | 128 words | 13.97 mm | 11.43 mm | |||||||||||||||||||||||||||||||
| Mfr Part No X28HC256SI-15 | Renesas | Datasheet | - | - | Min: 1 Mult: 1 | YES | 28 | 150 ns | INTERSIL CORP | Intersil Corporation | X28HC256SI-15 | 3 | 32768 words | 32000 | 85 °C | -40 °C | PLASTIC/EPOXY | SOP | SOP, SOP28,.4 | SOP28,.4 | RECTANGULAR | SMALL OUTLINE | Obsolete | SOIC | NOT SPECIFIED | 5.33 | No | 5 V | e0 | No | EAR99 | Tin/Lead (Sn/Pb) | 100000 ENDURANCE WRITE CYCLES; 100 YEARS DATA RETENTION | 8542.32.00.51 | EEPROMs | CMOS | DUAL | GULL WING | 240 | 1 | 1.27 mm | not_compliant | 28 | R-PDSO-G28 | Not Qualified | 5.5 V | 5 V | INDUSTRIAL | 4.5 V | ASYNCHRONOUS | 0.06 mA | 32KX8 | 2.65 mm | 8 | 0.0005 A | 262144 bit | PARALLEL | EEPROM | 5 V | 1000000 Write/Erase Cycles | 5 ms | 100 | YES | YES | NO | 128 words | 17.9 mm | 7.5 mm | ||||||||||||||||||||||||||||||
| Mfr Part No X28HC256EMB-70 | Xicor Inc | Datasheet | - | - | Min: 1 Mult: 1 | YES | 32 | 70 ns | XICOR INC | 32768 words | 32000 | 125 °C | -55 °C | CERAMIC, METAL-SEALED COFIRED | QCCN | QCCN, LCC32,.45X.55 | LCC32,.45X.55 | RECTANGULAR | CHIP CARRIER | Obsolete | No | 5 V | e0 | Tin/Lead (Sn/Pb) | 100000 ENDURANCE WRITE CYCLES; 100 YEARS DATA RETENTION | QUAD | NO LEAD | 1 | 1.27 mm | unknown | R-CQCC-N32 | Not Qualified | 5.5 V | MILITARY | 4.5 V | ASYNCHRONOUS | 0.06 mA | 32KX8 | 3-STATE | 3.048 mm | 8 | 0.0005 A | 262144 bit | 38535Q/M;38534H;883B | PARALLEL | EEPROM | 5 V | 1000000 Write/Erase Cycles | 5 ms | 100 | YES | YES | NO | 128 words | 13.97 mm | 11.43 mm | ||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No X28HC256EMB-70 | Intersil Corporation | Datasheet | - | - | Min: 1 Mult: 1 | YES | 32 | 70 ns | INTERSIL CORP | 32768 words | 32000 | 125 °C | -55 °C | CERAMIC, METAL-SEALED COFIRED | QCCN | QCCN, LCC32,.45X.55 | LCC32,.45X.55 | RECTANGULAR | CHIP CARRIER | Obsolete | QFJ | No | 5 V | e0 | 3A001.A.2.C | Tin/Lead (Sn/Pb) | 100000 ENDURANCE WRITE CYCLES; 100 YEARS DATA RETENTION | 8542.32.00.51 | QUAD | NO LEAD | 1 | 1.27 mm | not_compliant | 32 | R-CQCC-N32 | Not Qualified | 5.5 V | MILITARY | 4.5 V | ASYNCHRONOUS | 0.06 mA | 32KX8 | 3-STATE | 3.048 mm | 8 | 0.0005 A | 262144 bit | 38535Q/M;38534H;883B | PARALLEL | EEPROM | 5 V | 1000000 Write/Erase Cycles | 5 ms | 100 | YES | YES | NO | 128 words | 13.97 mm | 11.43 mm | ||||||||||||||||||||||||||||||||||||||
| Mfr Part No X28HC256KMB-70 | Xicor Inc | Datasheet | - | - | Min: 1 Mult: 1 | NO | 28 | 70 ns | XICOR INC | 32768 words | 32000 | 125 °C | -55 °C | CERAMIC, METAL-SEALED COFIRED | PGA | PGA, PGA28,5X6 | PGA28,5X6 | RECTANGULAR | GRID ARRAY | Obsolete | No | 5 V | e0 | Tin/Lead (Sn/Pb) | 100000 ENDURANCE WRITE CYCLES; 100 YEARS DATA RETENTION | PERPENDICULAR | PIN/PEG | 1 | 2.54 mm | unknown | R-CPGA-P28 | Not Qualified | 5.5 V | MILITARY | 4.5 V | ASYNCHRONOUS | 0.06 mA | 32KX8 | 3-STATE | 4.62 mm | 8 | 0.0005 A | 262144 bit | 38535Q/M;38534H;883B | PARALLEL | EEPROM | 5 V | 1000000 Write/Erase Cycles | 5 ms | 100 | YES | YES | NO | 128 words | 16.51 mm | 14 mm | ||||||||||||||||||||||||||||||||||||||||||
 | Mfr Part No CXK581100TM-10LL | Sony Semiconductor | Datasheet | - | - | Min: 1 Mult: 1 | YES | 32 | 100 ns | SONY CORP | 131072 words | 128000 | 70 °C | PLASTIC/EPOXY | TSOP1 | TSOP1, TSSOP32,.8,20 | TSSOP32,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | TSOP | No | 5 V | e0 | No | EAR99 | TIN LEAD | 8542.32.00.41 | DUAL | GULL WING | 1 | 0.5 mm | unknown | 32 | R-PDSO-G32 | Not Qualified | 5.5 V | COMMERCIAL | 4.5 V | 1 | ASYNCHRONOUS | 0.06 mA | 128KX8 | 3-STATE | 1.2 mm | 8 | 1048576 bit | PARALLEL | COMMON | STANDARD SRAM | 2 V | YES | 18.4 mm | 8 mm | |||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No X28C256EMB | Xicor Inc | Datasheet | - | - | Min: 1 Mult: 1 | YES | 32 | 300 ns | XICOR INC | 32768 words | 32000 | 125 °C | -55 °C | CERAMIC, METAL-SEALED COFIRED | QCCN | QCCN, LCC32,.45X.55 | LCC32,.45X.55 | RECTANGULAR | CHIP CARRIER | Obsolete | No | 5 V | e0 | TIN LEAD | 100000 ENDURANCE WRITE CYCLES; 100 YEARS DATA RETENTION | QUAD | NO LEAD | 1 | 1.27 mm | unknown | R-CQCC-N32 | Not Qualified | 5.5 V | MILITARY | 4.5 V | ASYNCHRONOUS | 0.06 mA | 32KX8 | 3-STATE | 3.05 mm | 8 | 0.0005 A | 262144 bit | MIL-STD-883 | PARALLEL | EEPROM | 5 V | 100000 Write/Erase Cycles | 10 ms | 100 | YES | YES | NO | 64 words | 13.97 mm | 11.43 mm | ||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No K4M64163PH-RF75 | Samsung Semiconductor | Datasheet | - | - | Min: 1 Mult: 1 | YES | 54 | 6 ns | 133 MHz | SAMSUNG SEMICONDUCTOR INC | 4194304 words | 4000000 | 70 °C | -25 °C | PLASTIC/EPOXY | FBGA | BGA54,9X9,32 | SQUARE | GRID ARRAY, FINE PITCH | Active | No | 1.8 V | e0 | EAR99 | Tin/Lead (Sn/Pb) | 8542.32.00.02 | BOTTOM | BALL | 0.8 mm | compliant | S-PBGA-B54 | Not Qualified | OTHER | 0.06 mA | 4MX16 | 3-STATE | 16 | 0.0003 A | 67108864 bit | COMMON | SYNCHRONOUS DRAM | 4096 | 1,2,4,8,FP | 1,2,4,8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No KM44C256BJ-10 | Samsung Semiconductor | Datasheet | - | - | Min: 1 Mult: 1 | YES | 20 | 100 ns | SAMSUNG SEMICONDUCTOR INC | 262144 words | 256000 | 70 °C | PLASTIC/EPOXY | SOJ | SOJ, SOJ20/26,.34 | SOJ20/26,.34 | RECTANGULAR | SMALL OUTLINE | Obsolete | SOJ | No | 5 V | e0 | No | EAR99 | TIN LEAD | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | 8542.32.00.02 | DUAL | J BEND | 1 | 1.27 mm | unknown | 20 | R-PDSO-J20 | Not Qualified | 5.5 V | COMMERCIAL | 4.5 V | 1 | ASYNCHRONOUS | 0.06 mA | 256KX4 | 3-STATE | 3.68 mm | 4 | 0.001 A | 1048576 bit | COMMON | FAST PAGE DRAM | 512 | FAST PAGE | 17.145 mm | 7.62 mm | ||||||||||||||||||||||||||||||||||||||||||||
 | Mfr Part No AM27C291-25DC | AMD | Datasheet | 320 | - | Min: 1 Mult: 1 | NO | 24 | 25 ns | ADVANCED MICRO DEVICES INC | 2048 words | 2000 | 75 °C | CERAMIC, GLASS-SEALED | DIP | DIP, DIP24(UNSPEC) | DIP24(UNSPEC) | RECTANGULAR | IN-LINE | Obsolete | DIP | No | 5 V | e0 | No | EAR99 | TIN LEAD | 8542.32.00.61 | DUAL | THROUGH-HOLE | 1 | unknown | 24 | R-GDIP-T24 | Not Qualified | 5.5 V | COMMERCIAL EXTENDED | 4.5 V | ASYNCHRONOUS | 0.06 mA | 2KX8 | 3-STATE | 8 | 16384 bit | PARALLEL | COMMON | UVPROM | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No HM628512BLP-5SL | Renesas Electronics Corporation | Datasheet | - | - | Min: 1 Mult: 1 | NO | 32 | 55 ns | RENESAS ELECTRONICS CORP | 524288 words | 512000 | 70 °C | -20 °C | PLASTIC/EPOXY | DIP | DIP-32 | DIP32,.6 | RECTANGULAR | IN-LINE | Obsolete | 5 V | 3A991.B.2.A | LG-MAX | 8542.32.00.41 | DUAL | THROUGH-HOLE | 1 | 2.54 mm | compliant | R-PDIP-T32 | Not Qualified | 5.5 V | OTHER | 4.5 V | ASYNCHRONOUS | 0.06 mA | 512KX8 | 3-STATE | 5.08 mm | 8 | 0.00001 A | 4194304 bit | PARALLEL | COMMON | STANDARD SRAM | 2 V | 42.5 mm | 15.24 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No TC511002P-10 | Toshiba America Electronic Components | Datasheet | - | - | Min: 1 Mult: 1 | NO | 18 | 100 ns | TOSHIBA CORP | 1048576 words | 1000000 | 70 °C | PLASTIC/EPOXY | DIP | DIP, DIP18,.3 | DIP18,.3 | RECTANGULAR | IN-LINE | Obsolete | No | 5 V | e0 | EAR99 | Tin/Lead (Sn/Pb) | 8542.32.00.41 | DUAL | THROUGH-HOLE | 2.54 mm | unknown | R-PDIP-T18 | Not Qualified | COMMERCIAL | 0.06 mA | 1MX1 | 3-STATE | 1 | 0.001 A | 1048576 bit | SEPARATE | STATIC COLUMN DRAM | 512 |
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GLS34HF32A4-70-4E-L1PE
Greenliant
Package:Memory
Price: please inquire
-
AM29LV640MH120RPCI
AMD
Package:Memory
Price: please inquire
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X28C256DI-25
Xicor
Package:Memory
Price: please inquire
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72T3675L5BBI
Renesas
Package:Memory
Price: please inquire
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5962-8961406MXA
E2V
Package:Memory
Price: please inquire
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5962-8764804XA
Micross
Package:Memory
Price: please inquire
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72V815L15PFI
Renesas
Package:Memory
Price: please inquire
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X28HC256J-12
Renesas
Package:Memory
Price: please inquire
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X28HC256J-15
Renesas
Package:Memory
Price: please inquire
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X28HC256SI-15
Renesas
Package:Memory
Price: please inquire
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X28HC256EMB-70
Xicor Inc
Package:Memory
Price: please inquire
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X28HC256EMB-70
Intersil Corporation
Package:Memory
Price: please inquire
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X28HC256KMB-70
Xicor Inc
Package:Memory
Price: please inquire
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CXK581100TM-10LL
Sony Semiconductor
Package:Memory
Price: please inquire
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X28C256EMB
Xicor Inc
Package:Memory
Price: please inquire
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K4M64163PH-RF75
Samsung Semiconductor
Package:Memory
Price: please inquire
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KM44C256BJ-10
Samsung Semiconductor
Package:Memory
Price: please inquire
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AM27C291-25DC
AMD
Package:Memory
Price: please inquire
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HM628512BLP-5SL
Renesas Electronics Corporation
Package:Memory
Price: please inquire
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TC511002P-10
Toshiba America Electronic Components
Package:Memory
Price: please inquire