The category is 'Memory'
Memory (119)
- All Manufacturers
- Ihs Manufacturer
- JESD-30 Code
- Number of Terminals
- Operating Temperature-Max
- Package Body Material
- Package Code
- Package Shape
- Package Style
- Part Life Cycle Code
- Reach Compliance Code
- Supply Current-Max
- Surface Mount
- Supply Current-Max:
0.06 mA
Image | Part Number | Manufacturer | Datasheet | Availability | Pricing(USD) | Quantity | RoHS | Factory Lead Time | Lifecycle Status | Mount | Mounting Type | Package / Case | Surface Mount | Number of Pins | Supplier Device Package | Housing Material | Number of Terminals | Access Time-Max | Brand | Clock Frequency-Max (fCLK) | Contact Materials | Current - Saturation (Isat) | Current-IEC | Current-UL | Factory Pack QuantityFactory Pack Quantity | Frequency-Self-Resonant | Ihs Manufacturer | Inductance Frequency-Test | Manufacturer | Manufacturer Part Number | Material-Core | Memory Types | Mfr | Moisture Sensitivity Levels | Mounting Styles | Number of Words | Number of Words Code | Operating Temperature-Max | Operating Temperature-Min | Package | Package Body Material | Package Code | Package Description | Package Equivalence Code | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Product Status | Reflow Temperature-Max (s) | Risk Rank | RoHS | Rohs Code | Supply Voltage-Nom (Vsup) | Torque-Screw | Usage Level | Voltage-UL | Operating Temperature | Packaging | Series | Size / Dimension | Tolerance | JESD-609 Code | Pbfree Code | Part Status | Number of Terminations | ECCN Code | Temperature Coefficient | Type | Resistance | Number of Positions | Terminal Finish | Max Operating Temperature | Min Operating Temperature | Composition | Color | Power (Watts) | Additional Feature | HTS Code | Subcategory | Current Rating (Amps) | Pitch | Technology | Terminal Position | Terminal Form | Shielding | Peak Reflow Temperature (Cel) | Number of Functions | Ingress Protection | Terminal Pitch | Insulation Height | Reach Compliance Code | Frequency | Pin Count | Termination Style | JESD-30 Code | Qualification Status | Brand Name | Operating Supply Voltage | Failure Rate | Supply Voltage-Max (Vsup) | Power Supplies | Temperature Grade | Supply Voltage-Min (Vsup) | Voltage | Contact Tail Length | Inductance | Interface | Max Supply Voltage | Min Supply Voltage | Memory Size | DC Resistance (DCR) | Number of Levels | Nominal Supply Current | Operating Mode | Supply Current-Max | Q @ Freq | Contact Mating Finish | Access Time | Data Bus Width | Wire Gauge or Range - AWG | Organization | Output Characteristics | Positions Per Level | Seated Height-Max | Memory Width | Plug Wire Entry | Header Orientation | Address Bus Width | Wire Gauge or Range - mm² | Product Type | Wire Strip Length | Density | Standby Current-Max | Memory Density | Screw Size | Screening Level | Parallel/Serial | I/O Type | Sync/Async | Word Size | Memory IC Type | Programming Voltage | Serial Bus Type | Endurance | Write Cycle Time-Max (tWC) | Data Retention Time-Min | Write Protection | Alternate Memory Width | Data Polling | Toggle Bit | Command User Interface | Number of Sectors/Size | Sector Size | Page Size | Ready/Busy | Boot Block | Common Flash Interface | Features | Reverse Pinout | Product Category | Height Seated (Max) | Length | Width | Material Flammability Rating | Radiation Hardening | Ratings |
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 | Mfr Part No AM29F016D-90E4F | AMD | Datasheet | - | - | Min: 1 Mult: 1 | Surface Mount | Axial | YES | 40 | Axial | 40 | 90 ns | ADVANCED MICRO DEVICES INC | AMD | AM29F016D-90E4F | NOR | 2097152 words | 2000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TSSOP | TSSOP40,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | Transferred | 5.79 | Compliant | Yes | 5 V | -65°C ~ 175°C | Bulk | Military, MIL-R-10509/3, RN70 | 0.180 Dia x 0.562 L (4.57mm x 14.27mm) | ±1% | Active | 2 | ±100ppm/°C | NOR TYPE | 115 Ohms | 85 °C | -40 °C | Metal Film | 0.75W, 3/4W | Flash Memories | CMOS | DUAL | GULL WING | 0.5 mm | unknown | R-PDSO-G40 | Not Qualified | 5 V | -- | 5 V | INDUSTRIAL | Parallel | 5.5 V | 4.5 V | 2 MB | 40 mA | 0.06 mA | 90 ns | 8 b | 2MX8 | 8 | 21 b | 16 Mb | 0.000005 A | 16777216 bit | PARALLEL | Asynchronous | 8 b | FLASH | YES | YES | YES | 32 | 64K | YES | YES | Flame Retardant Coating, Military, Moisture Resistant, Safety | -- | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No AM29F800BT-70EI | AMD | Datasheet | - | - | Min: 1 Mult: 1 | Surface Mount | YES | 48 | 48 | 70 ns | SPANSION INC | Spansion | AM29F800BT-70EI | NOR | 3 | 524288 words | 512000 | 85 °C | -40 °C | PLASTIC/EPOXY | TSSOP | MO-142DD, TSOP-48 | TSSOP48,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | Obsolete | TSOP1 | 30 | 8.29 | Compliant | No | 5 V | e0 | No | EAR99 | NOR TYPE | Tin/Lead (Sn/Pb) | 85 °C | -40 °C | TOP BOOT BLOCK | 8542.32.00.51 | Flash Memories | CMOS | DUAL | GULL WING | 240 | 1 | 0.5 mm | not_compliant | 48 | R-PDSO-G48 | Not Qualified | 5 V | 5.5 V | 5 V | INDUSTRIAL | 4.5 V | Parallel | 5.5 V | 4.5 V | 1 MB | 50 mA | ASYNCHRONOUS | 0.06 mA | 70 ns | 16 b | 512KX16 | 1.2 mm | 16 | 8 Mb | 0.001 A | 8388608 bit | PARALLEL | Asynchronous | FLASH | 5 V | 1000000 Write/Erase Cycles | 8 | YES | YES | YES | 1,2,1,15 | 16K,8K,32K,64K | YES | TOP | 18.4 mm | 12 mm | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No X28C64D-25 | Intersil (Renesas Electronics America) | Datasheet | - | - | Min: 1 Mult: 1 | NO | 28 | 250 ns | XICOR INC | X28C64D-25 | 8192 words | 8000 | 70 °C | CERAMIC, GLASS-SEALED | DIP | HERMETIC SEALED, CERDIP-28 | DIP28,.6 | RECTANGULAR | IN-LINE | Obsolete | 7.99 | No | 5 V | e0 | Tin/Lead (Sn/Pb) | PAGE WRITE | DUAL | THROUGH-HOLE | 1 | 2.54 mm | unknown | R-GDIP-T28 | Not Qualified | 5.5 V | 5 V | COMMERCIAL | 4.5 V | ASYNCHRONOUS | 0.06 mA | 8KX8 | 3-STATE | 7.24 mm | 8 | 0.0002 A | 65536 bit | PARALLEL | EEPROM | 5 V | 100000 Write/Erase Cycles | 10 ms | YES | YES | NO | 64 words | 37.15 mm | 15.24 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No AM29F800B-120EC | AMD | Datasheet | - | - | Min: 1 Mult: 1 | Through Hole | Axial | YES | Axial | 48 | 120 ns | - | - | SPANSION INC | 1 kHz | Spansion | AM29F800B-120EC | Ferrite | Signal Transformer | 3 | 524288 words | 512000 | 70 °C | Tape & Reel (TR);Cut Tape (CT);Digi-Reel®; | PLASTIC/EPOXY | TSSOP | TSOP-48 | TSSOP48,.8,20 | RECTANGULAR | SMALL OUTLINE | Obsolete | TSOP | Active | 5.32 | No | 5 V | -40°C ~ 125°C | SFAPI | 0.260 Dia x 0.650 L (6.60mm x 16.50mm) | ±10% | e0 | EAR99 | - | Tin/Lead (Sn/Pb) | BOTTOM BOOT BLOCK | 8542.32.00.51 | Flash Memories | 125 mA | CMOS | DUAL | GULL WING | Unshielded | 1 | 0.5 mm | not_compliant | 48 | R-PDSO-G48 | Not Qualified | 5.5 V | 5 V | COMMERCIAL | 4.5 V | 3.3 mH | 6.56Ohm Max | ASYNCHRONOUS | 0.06 mA | - | 512KX16 | 1.2 mm | 16 | 0.000005 A | 8388608 bit | PARALLEL | FLASH | 5 V | 100000 Write/Erase Cycles | 0.00012 ms | 8 | YES | YES | YES | 1,2,1,15 | 16K,8K,32K,64K | YES | BOTTOM | - | - | 18.4 mm | 12 mm | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No MT25QU01GBBA8E12-0SIT | Micron Technology | Datasheet | - | - | Min: 1 Mult: 1 | Obsolete (Last Updated: 2 years ago) | YES | 24 | 24 | 133 MHz | MICRON TECHNOLOGY INC | Micron Technology Inc | MT25QU01GBBA8E12-0SIT | 134217728 words | 128000000 | 85 °C | -40 °C | PLASTIC/EPOXY | BGA | BGA, BGA24,5X5,40 | BGA24,5X5,40 | SQUARE | GRID ARRAY | Obsolete | 5.82 | Non-Compliant | Yes | 1.8 V | NOR TYPE | Flash Memories | CMOS | BOTTOM | BALL | 1 mm | compliant | 133 MHz | S-PBGA-B24 | Not Qualified | 1.8 V | INDUSTRIAL | 1.7 V | Serial (SPI) | 2 V | 1.7 V | 0.06 mA | 6 | 128MX8 | 8 | 1 Gb | 0.00005 A | 1 | SERIAL | FLASH | SPI | 100000 Write/Erase Cycles | 20 | HARDWARE/SOFTWARE | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No AM29F800BT90SE | AMD | Datasheet | - | - | Min: 1 Mult: 1 | YES | 44 | 90 ns | ADVANCED MICRO DEVICES INC | AMD | AM29F800BT-90SE | 524288 words | 512000 | 125 °C | -55 °C | PLASTIC/EPOXY | SOP | SOP, SOP44,.63 | SOP44,.63 | RECTANGULAR | SMALL OUTLINE | Transferred | SOIC | NOT SPECIFIED | 5.22 | No | 5 V | e0 | 3A001.A.2.C | NOR TYPE | Tin/Lead (Sn/Pb) | MINIMUM 1,000,000 PROGRAM/ERASE CYCLES PER SECTOR; 20-YEAR DATA RETENTION | 8542.32.00.51 | Flash Memories | CMOS | DUAL | GULL WING | NOT SPECIFIED | 1 | 1.27 mm | unknown | 44 | R-PDSO-G44 | Not Qualified | 5.5 V | 5 V | MILITARY | 4.5 V | ASYNCHRONOUS | 0.06 mA | 512KX16 | 3-STATE | 2.8 mm | 16 | 0.000005 A | 8388608 bit | PARALLEL | FLASH | 5 V | 1000000 Write/Erase Cycles | 20 | 8 | YES | YES | YES | 1,2,1,15 | 16K,8K,32K,64K | YES | TOP | 28.2 mm | 13.3 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No AM29F016D-120ED | AMD | Datasheet | - | - | Min: 1 Mult: 1 | YES | 48 | 120 ns | ADVANCED MICRO DEVICES INC | AMD | AM29F016D-120ED | 2097152 words | 2000000 | 70 °C | PLASTIC/EPOXY | TSSOP | TSSOP, TSSOP48,.8,20 | TSSOP48,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | Transferred | 5.77 | Yes | 5 V | NOR TYPE | Flash Memories | CMOS | DUAL | GULL WING | 0.5 mm | unknown | R-PDSO-G48 | Not Qualified | 5 V | COMMERCIAL | 0.06 mA | 2MX8 | 8 | 0.000005 A | 16777216 bit | PARALLEL | FLASH | YES | YES | YES | 32 | 64K | YES | YES | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No AM29F400BB-70FE | Cypress | Datasheet | - | - | Min: 1 Mult: 1 | YES | 48 | 70 ns | ADVANCED MICRO DEVICES INC | AMD | AM29F400BB-70FE | 262144 words | 256000 | 125 °C | -55 °C | PLASTIC/EPOXY | TSOP1-R | TSOP1-R, TSSOP48,.8,20 | TSSOP48,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Transferred | TSOP1 | 5.11 | No | 5 V | e0 | 3A001.A.2.C | NOR TYPE | Tin/Lead (Sn/Pb) | MINIMUM 1000K PROGRAM/ERASE CYCLE ;20 YEAR DATA RETENTION | 8542.32.00.51 | Flash Memories | CMOS | DUAL | GULL WING | 1 | 0.5 mm | unknown | 48 | R-PDSO-G48 | Not Qualified | 5.5 V | 5 V | MILITARY | 4.5 V | ASYNCHRONOUS | 0.06 mA | 256KX16 | 3-STATE | 1.2 mm | 16 | 0.000005 A | 4194304 bit | PARALLEL | FLASH | 5 V | 1000000 Write/Erase Cycles | 20 | 8 | YES | YES | YES | 1,2,1,7 | 16K,8K,32K,64K | YES | BOTTOM | YES | 18.4 mm | 12 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No MT42C4064-10 | Micron Technology | Datasheet | - | - | Min: 1 Mult: 1 | NO | 24 | 100 ns | MICRON TECHNOLOGY INC | Micron Technology Inc | MT42C4064-10 | 65536 words | 64000 | 70 °C | PLASTIC/EPOXY | DIP | DIP24,.4 | RECTANGULAR | IN-LINE | Active | 2.34 | No | 5 V | e0 | Tin/Lead (Sn/Pb) | 8542.32.00.71 | Other Memory ICs | CMOS | DUAL | THROUGH-HOLE | 2.54 mm | unknown | R-PDIP-T24 | Not Qualified | 5 V | COMMERCIAL | 0.06 mA | 64KX4 | 4 | 0.004 A | 262144 bit | MEMORY CIRCUIT | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No 5962-8764803XA | Texas Instruments | Datasheet | - | - | Min: 1 Mult: 1 | NO | 28 | 250 ns | TELEDYNE E2V (UK) LTD | e2v technologies | 5962-8764803XA | 65536 words | 64000 | 125 °C | -55 °C | CERAMIC, GLASS-SEALED | DIP | DIP, DIP28,.6 | DIP28,.6 | RECTANGULAR | IN-LINE | Active | DIP | 5.61 | Non-Compliant | 5 V | Military grade | e0 | EAR99 | TIN LEAD | 8542.32.00.61 | EPROMs | CMOS | DUAL | THROUGH-HOLE | 1 | 2.54 mm | compliant | 28 | R-GDIP-T28 | Not Qualified | 5.5 V | 5 V | MILITARY | 4.5 V | ASYNCHRONOUS | 0.06 mA | 64KX8 | 3-STATE | 8 | 0.000325 A | 524288 bit | 38535Q/M;38534H;883B | PARALLEL | COMMON | UVPROM | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No 5962-8680505QA | E2V | Datasheet | - | - | Min: 1 Mult: 1 | NO | 40 | 90 ns | TELEDYNE E2V (UK) LTD | e2v technologies | 5962-8680505QA | 65536 words | 64000 | 125 °C | -55 °C | CERAMIC, GLASS-SEALED | DIP | DIP, DIP40,.6 | DIP40,.6 | RECTANGULAR | IN-LINE | Obsolete | DIP | 5.74 | 5 V | Military grade | e0 | EAR99 | TIN LEAD | 8542.32.00.61 | EPROMs | CMOS | DUAL | THROUGH-HOLE | 1 | 2.54 mm | compliant | 40 | R-GDIP-T40 | Qualified | 5.5 V | 5 V | MILITARY | 4.5 V | ASYNCHRONOUS | 0.06 mA | 64KX16 | 3-STATE | 16 | 0.00012 A | 1048576 bit | 38535Q/M;38534H;883B | PARALLEL | COMMON | UVPROM | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No AM29F200BB-90ED | AMD | Datasheet | - | - | Min: 1 Mult: 1 | Surface Mount | Free Hanging (In-Line) | YES | 48 | Thermoplastic | 48 | 90 ns | Phosphor Bronze | -- | 10A | ADVANCED MICRO DEVICES INC | AMD | AM29F200BB-90ED | NOR | 256000 | 128000 | 70 °C | PLASTIC/EPOXY | TSSOP | TSSOP48,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | Transferred | 5.76 | Compliant | Yes | 5 V | -- | 300V | -40°C ~ 115°C | Bulk | HW | Active | Plug, Female Sockets | 5 | 70 °C | 0 °C | Green | Flash Memories | 0.200 (5.08mm) | CMOS | DUAL | GULL WING | -- | 0.5 mm | 0.591 (15.00mm) | unknown | Screwless - Leg Spring, Push-In Spring | R-PDSO-G48 | Not Qualified | 5 V | 5 V | COMMERCIAL | -- | Parallel | 5.5 V | 4.5 V | 244.1 kB | 1 | 50 mA | 0.06 mA | Tin | 90 ns | 12-26 AWG | 128KX16 | 5 | 16 | 180° | -- | -- | 9-10mm | 2 Mb | 0.000005 A | 2097152 bit | -- | PARALLEL | Asynchronous | FLASH | 1000000 Write/Erase Cycles | 8 | YES | YES | YES | 1,2,1,3 | 16K,8K,32K,64K | YES | BOTTOM | Mating Flange, Retention Latches (Non-Wire Side) | UL94 V-0 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No AM29F100B120SE | AMD | Datasheet | - | - | Min: 1 Mult: 1 | YES | 44 | 120 ns | ADVANCED MICRO DEVICES INC | Toshiba | AM29F100B-120SE | 131072 words | 128000 | 125 °C | -55 °C | PLASTIC/EPOXY | SOP | SOP, SOP44,.63 | SOP44,.63 | RECTANGULAR | SMALL OUTLINE | Obsolete | SOIC | NOT SPECIFIED | 5.88 | Non-Compliant | No | 5 V | e0 | 3A001.A.2.C | NOR TYPE | Tin/Lead (Sn/Pb) | 100K PROGRAM/ERASE CYCLES MIN ;CAN BE CONFG AS 64K X 16; BOTTOM BOOT BLOCK | 8542.32.00.51 | Flash Memories | CMOS | DUAL | GULL WING | NOT SPECIFIED | 1 | 1.27 mm | unknown | 44 | R-PDSO-G44 | Not Qualified | 5.5 V | 5 V | MILITARY | 4.5 V | ASYNCHRONOUS | 0.06 mA | 128KX8 | 3-STATE | 8 | 0.0001 A | 1048576 bit | PARALLEL | FLASH | 5 V | 8 | YES | YES | YES | 1,2,1,1 | 16K,8K,32K,64K | YES | BOTTOM | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No WMF2M8-120DAC5 | Microchip | Datasheet | - | - | Min: 1 Mult: 1 | YES | 56 | 120 ns | Royalohm | 4000 | MERCURY SYSTEMS INC | Royalohm | WMF2M8-120DAC5 | PCB Mount | 2097152 words | 2000000 | 70 °C | CERAMIC, METAL-SEALED COFIRED | SSOP | SSOP, SOP56,.6,32 | SOP56,.6,32 | RECTANGULAR | SMALL OUTLINE, SHRINK PITCH | Active | 5.72 | 5 V | Reel | High Quality Automotive Thick Film - HQ | NOR TYPE | Resistors | Thick Film | DUAL | GULL WING | 1 | 0.8 mm | unknown | R-CDSO-G56 | 5.5 V | COMMERCIAL | 4.5 V | ASYNCHRONOUS | 0.06 mA | 2MX8 | 4.06 mm | 8 | Thick Film Resistors | 0.002 A | 16777216 bit | PARALLEL | FLASH | 5 V | 100000 Write/Erase Cycles | YES | YES | 32 | 64K | YES | Thick Film Resistors - SMD | 23.63 mm | 12.96 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No AM29F800BB-120EI | AMD | Datasheet | - | - | Min: 1 Mult: 1 | YES | 48 | 120 ns | ADVANCED MICRO DEVICES INC | AMD | AM29F800BB-120EI | 524288 words | 512000 | 85 °C | -40 °C | PLASTIC/EPOXY | TSOP1 | TSOP1, TSSOP48,.8,20 | TSSOP48,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Transferred | TSOP1 | 8.12 | Non-Compliant | No | 5 V | e0 | EAR99 | NOR TYPE | Tin/Lead (Sn/Pb) | MINIMUM 1,000,000 PROGRAM/ERASE CYCLES PER SECTOR; 20-YEAR DATA RETENTION | 8542.32.00.51 | Flash Memories | CMOS | DUAL | GULL WING | 1 | 0.5 mm | unknown | 48 | R-PDSO-G48 | Not Qualified | 5.5 V | 5 V | INDUSTRIAL | 4.5 V | ASYNCHRONOUS | 0.06 mA | 512KX16 | 3-STATE | 1.2 mm | 16 | 0.000005 A | 8388608 bit | PARALLEL | FLASH | 5 V | 1000000 Write/Erase Cycles | 20 | 8 | YES | YES | YES | 1,2,1,15 | 16K,8K,32K,64K | YES | BOTTOM | 18.4 mm | 12 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No M50FLW080ANB5TG | STMicroelectronics | Datasheet | - | - | Min: 1 Mult: 1 | YES | 32 | 11 ns | STMICROELECTRONICS | STMicroelectronics | M50FLW080ANB5TG | 1048576 words | 1000000 | 85 °C | -20 °C | PLASTIC/EPOXY | TSOP1 | 8 X 14 MM, ROHS COMPLIANT, PLASTIC, TSOP-32 | TSSOP32,.56,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | TSOP | NOT SPECIFIED | 5.74 | Yes | 3.3 V | e3/e6 | EAR99 | NOR TYPE | TIN/TIN BISMUTH | 8542.32.00.51 | Flash Memories | CMOS | DUAL | GULL WING | NOT SPECIFIED | 1 | 0.5 mm | compliant | 32 | R-PDSO-G32 | Not Qualified | 3.6 V | 3.3 V | OTHER | 3 V | SYNCHRONOUS | 0.06 mA | 1MX8 | 1.2 mm | 8 | 0.0001 A | 8388608 bit | PARALLEL | FLASH | 3 V | NO | NO | YES | 48,13 | 4K,64K | 12.4 mm | 8 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No X28HC256S-90 | Renesas | Datasheet | - | - | Min: 1 Mult: 1 | YES | 28 | 90 ns | XICOR INC | Xicor Inc | X28HC256S-90 | 32768 words | 32000 | 70 °C | PLASTIC/EPOXY | SOP | SOP, SOP28,.45 | SOP28,.45 | RECTANGULAR | SMALL OUTLINE | Transferred | 5.66 | No | 5 V | e0 | Tin/Lead (Sn/Pb) | 100000 ENDURANCE WRITE CYCLES; 100 YEARS DATA RETENTION | EEPROMs | CMOS | DUAL | GULL WING | 1 | 1.27 mm | unknown | R-PDSO-G28 | Not Qualified | 5.5 V | 5 V | COMMERCIAL | 4.5 V | ASYNCHRONOUS | 0.06 mA | 32KX8 | 3-STATE | 2.65 mm | 8 | 0.0005 A | 262144 bit | PARALLEL | EEPROM | 5 V | 1000000 Write/Erase Cycles | 5 ms | 100 | YES | YES | NO | 128 words | 17.9 mm | 7.5 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No X28HC256EMB-15 | Intersil | Datasheet | - | - | Min: 1 Mult: 1 | YES | 32 | 150 ns | XICOR INC | Xicor Inc | X28HC256EMB-15 | 32768 words | 32000 | 125 °C | -55 °C | CERAMIC, METAL-SEALED COFIRED | QCCN | QCCN, LCC32,.45X.55 | LCC32,.45X.55 | RECTANGULAR | CHIP CARRIER | Transferred | NOT SPECIFIED | 5.69 | No | 5 V | Military grade | e0 | Tin/Lead (Sn/Pb) | 100000 ENDURANCE WRITE CYCLES; 100 YEARS DATA RETENTION | EEPROMs | CMOS | QUAD | NO LEAD | NOT SPECIFIED | 1 | 1.27 mm | unknown | R-CQCC-N32 | Not Qualified | 5.5 V | 5 V | MILITARY | 4.5 V | ASYNCHRONOUS | 0.06 mA | 32KX8 | 3-STATE | 3.048 mm | 8 | 0.0005 A | 262144 bit | 38535Q/M;38534H;883B | PARALLEL | EEPROM | 5 V | 1000000 Write/Erase Cycles | 5 ms | 100 | YES | YES | NO | 128 words | 13.97 mm | 11.43 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No X28HC256JI-15 | Renesas | Datasheet | - | - | Min: 1 Mult: 1 | YES | 32 | 150 ns | INTERSIL CORP | Intersil Corporation | X28HC256JI-15 | 3 | 32768 words | 32000 | 85 °C | -40 °C | PLASTIC/EPOXY | QCCJ | QCCJ, LDCC32,.5X.6 | LDCC32,.5X.6 | RECTANGULAR | CHIP CARRIER | Obsolete | QFJ | NOT SPECIFIED | 5.46 | No | 5 V | e0 | No | EAR99 | Tin/Lead (Sn/Pb) | 100000 ENDURANCE WRITE CYCLES; 100 YEARS DATA RETENTION | 8542.32.00.51 | EEPROMs | CMOS | QUAD | J BEND | 240 | 1 | 1.27 mm | not_compliant | 32 | R-PQCC-J32 | Not Qualified | 5.5 V | 5 V | INDUSTRIAL | 4.5 V | ASYNCHRONOUS | 0.06 mA | 32KX8 | 3.55 mm | 8 | 0.0005 A | 262144 bit | PARALLEL | EEPROM | 5 V | 1000000 Write/Erase Cycles | 5 ms | 100 | YES | YES | NO | 128 words | 13.97 mm | 11.43 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No X28HC256PZ-15 | Intersil | Datasheet | - | - | Min: 1 Mult: 1 | 21 Weeks | NO | 28 | 150 ns | INTERSIL CORP | Intersil Corporation | X28HC256PZ-15 | 32768 words | 32000 | 70 °C | PLASTIC/EPOXY | DIP | DIP, DIP28,.6 | DIP28,.6 | RECTANGULAR | IN-LINE | Unknown | PDIP, PLCC, SOIC | NOT APPLICABLE | 5.55 | 5 V | e3 | EAR99 | Matte Tin (Sn) - annealed | 8542.32.00.51 | EEPROMs | CMOS | DUAL | THROUGH-HOLE | NOT APPLICABLE | 1 | 2.54 mm | compliant | 28, 32, 28 | R-PDIP-T28 | Not Qualified | Intersil | 5.5 V | 5 V | COMMERCIAL | 4.5 V | ASYNCHRONOUS | 0.06 mA | 32KX8 | 6.35 mm | 8 | 0.0005 A | 262144 bit | PARALLEL | EEPROM | 5 V | 1000000 Write/Erase Cycles | 5 ms | YES | YES | NO | 128 words | 37.4 mm | 15.24 mm |
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