Shop the Latest Memory at Richard Electronics - Browse Our Product List Now

Sorry! No search result....

Sign In

Sorry! No search result....

The category is 'Memory'

Memory (119)

All Manufacturers
Ihs Manufacturer
JESD-30 Code
Number of Terminals
Operating Temperature-Max
Package Body Material
Package Code
Package Shape
Package Style
Part Life Cycle Code
Reach Compliance Code
Supply Current-Max
Surface Mount

Supply Current-Max:
0.06 mA

Image	Part Number	Manufacturer	Datasheet	Availability	Pricing(USD)	Quantity	RoHS	Factory Lead Time	Surface Mount	Number of Pins	Number of Terminals	Access Time-Max	Ihs Manufacturer	Manufacturer	Manufacturer Part Number	Moisture Sensitivity Levels	Number of Words	Number of Words Code	Operating Temperature-Max	Operating Temperature-Min	Package Body Material	Package Code	Package Description	Package Equivalence Code	Package Shape	Package Style	Part Life Cycle Code	Part Package Code	Reflow Temperature-Max (s)	Risk Rank	RoHS	Rohs Code	Supply Voltage-Nom (Vsup)	Packaging	JESD-609 Code	Pbfree Code	ECCN Code	Type	Terminal Finish	Max Operating Temperature	Min Operating Temperature	Additional Feature	HTS Code	Subcategory	Technology	Terminal Position	Terminal Form	Peak Reflow Temperature (Cel)	Number of Functions	Terminal Pitch	Reach Compliance Code	Frequency	Pin Count	JESD-30 Code	Qualification Status	Brand Name	Operating Supply Voltage	Supply Voltage-Max (Vsup)	Power Supplies	Temperature Grade	Supply Voltage-Min (Vsup)	Memory Size	Number of Ports	Operating Mode	Supply Current-Max	Access Time	Organization	Output Characteristics	Seated Height-Max	Memory Width	Address Bus Width	Density	Standby Current-Max	Memory Density	Parallel/Serial	I/O Type	Memory IC Type	Programming Voltage	Endurance	Write Cycle Time-Max (tWC)	Data Retention Time-Min	Standby Voltage-Min	Alternate Memory Width	Data Polling	Toggle Bit	Command User Interface	Number of Sectors/Size	Sector Size	Page Size	Ready/Busy	Boot Block	Common Flash Interface	Length	Width	Radiation Hardening	Lead Free
	Mfr Part No MX23L12810TC-12	Macronix International Co Ltd	Datasheet	-	-	Min: 1 Mult: 1			YES		48	120 ns	MACRONIX INTERNATIONAL CO LTD				8388608 words	8000000	70 °C		PLASTIC/EPOXY	TSOP1	TSOP1, TSSOP48,.8,20	TSSOP48,.8,20	RECTANGULAR	SMALL OUTLINE, THIN PROFILE	Obsolete	TSOP1				No	3.3 V		e0		EAR99		TIN LEAD				8542.32.00.71			DUAL	GULL WING		1	0.5 mm	unknown		48	R-PDSO-G48	Not Qualified			3.6 V		COMMERCIAL	3 V			ASYNCHRONOUS	0.06 mA		8MX16		1.2 mm	16			0.000005 A	134217728 bit	PARALLEL		MASK ROM						8										18.4 mm	12 mm
	Mfr Part No MX23C8100TC-10	Macronix International Co Ltd	Datasheet	-	-	Min: 1 Mult: 1			YES		48	100 ns	MACRONIX INTERNATIONAL CO LTD				524288 words	512000	70 °C		PLASTIC/EPOXY	TSOP1	TSOP1, TSSOP48,.8,20	TSSOP48,.8,20	RECTANGULAR	SMALL OUTLINE, THIN PROFILE	Obsolete	TSOP1				No	5 V		e0		EAR99		TIN LEAD				8542.32.00.71			DUAL	GULL WING		1	0.5 mm	unknown		48	R-PDSO-G48	Not Qualified			5.5 V		COMMERCIAL	4.5 V			ASYNCHRONOUS	0.06 mA		512KX16		1.2 mm	16			0.00005 A	8388608 bit	PARALLEL		MASK ROM																18.4 mm	12 mm
	Mfr Part No MX23L12811MC-12	Macronix International Co Ltd	Datasheet	-	-	Min: 1 Mult: 1			YES		44	120 ns	MACRONIX INTERNATIONAL CO LTD				8388608 words	8000000	70 °C		PLASTIC/EPOXY	SOP	SOP, SOP44,.63	SOP44,.63	RECTANGULAR	SMALL OUTLINE	Obsolete	SOIC				No	3.3 V		e0		EAR99		TIN LEAD				8542.32.00.71			DUAL	GULL WING		1	1.27 mm	unknown		44	R-PDSO-G44	Not Qualified			3.6 V		COMMERCIAL	3 V			ASYNCHRONOUS	0.06 mA		8MX16		3 mm	16			0.000005 A	134217728 bit	PARALLEL		MASK ROM																28.5 mm	12.6 mm
	Mfr Part No KM23C32000A-15	Samsung Semiconductor	Datasheet	-	-	Min: 1 Mult: 1			NO		42	150 ns	SAMSUNG SEMICONDUCTOR INC				2097152 words	2000000	70 °C		PLASTIC/EPOXY	DIP	DIP, DIP42,.6	DIP42,.6	RECTANGULAR	IN-LINE	Obsolete	DIP				No	5 V		e0		EAR99		Tin/Lead (Sn/Pb)				8542.32.00.71			DUAL	THROUGH-HOLE		1	2.54 mm	unknown		42	R-PDIP-T42	Not Qualified			5.5 V		COMMERCIAL	4.5 V			ASYNCHRONOUS	0.06 mA		2MX16		5.08 mm	16			0.00005 A	33554432 bit	PARALLEL		MASK ROM																52.25 mm	15.24 mm
	Mfr Part No MX23C1610PC-10	Macronix International Co Ltd	Datasheet	-	-	Min: 1 Mult: 1			NO		42	100 ns	MACRONIX INTERNATIONAL CO LTD				1048576 words	1000000	70 °C		PLASTIC/EPOXY	DIP	DIP, DIP42,.6	DIP42,.6	RECTANGULAR	IN-LINE	Obsolete	DIP				No	5 V		e0		EAR99		TIN LEAD				8542.32.00.71			DUAL	THROUGH-HOLE		1	2.54 mm	unknown		42	R-PDIP-T42	Not Qualified			5.5 V		COMMERCIAL	4.5 V			ASYNCHRONOUS	0.06 mA		1MX16	3-STATE	4.9 mm	16			0.00005 A	16777216 bit	PARALLEL		MASK ROM						8										51.94 mm	15.24 mm
	Mfr Part No X28HC256SIZ-90	Intersil	Datasheet	-	-	Min: 1 Mult: 1		21 Weeks	YES		28	90 ns	INTERSIL CORP	Intersil Corporation	X28HC256SIZ-90	3	32768 words	32000	85 °C	-40 °C	PLASTIC/EPOXY	SOP	SOP, SOP28,.4	SOP28,.4	RECTANGULAR	SMALL OUTLINE	Unknown	PDIP, PLCC, SOIC	40	5.53			5 V		e3		EAR99		Matte Tin (Sn) - annealed				8542.32.00.51	EEPROMs	CMOS	DUAL	GULL WING	260	1	1.27 mm	compliant		28, 32, 28	R-PDSO-G28	Not Qualified	Intersil		5.5 V	5 V	INDUSTRIAL	4.5 V			ASYNCHRONOUS	0.06 mA		32KX8		2.65 mm	8			0.0005 A	262144 bit	PARALLEL		EEPROM	5 V	1000000 Write/Erase Cycles	5 ms				YES	YES	NO			128 words				17.9 mm	7.5 mm
	Mfr Part No X28HC256JI-90T1	Intersil	Datasheet	-	-	Min: 1 Mult: 1			YES		32	90 ns	INTERSIL CORP	Intersil Corporation	X28HC256JI-90T1	3	32768 words	32000	85 °C	-40 °C	PLASTIC/EPOXY	QCCJ	QCCJ, LDCC32,.5X.6	LDCC32,.5X.6	RECTANGULAR	CHIP CARRIER	Obsolete	PDIP, PLCC, SOIC	NOT SPECIFIED	5.46		No	5 V		e0		EAR99		Tin/Lead (Sn/Pb)			100000 ENDURANCE WRITE CYCLES; 100 YEARS DATA RETENTION	8542.32.00.51	EEPROMs	CMOS	QUAD	J BEND	240	1	1.27 mm	not_compliant		28, 32, 28	R-PQCC-J32	Not Qualified	Intersil		5.5 V	5 V	INDUSTRIAL	4.5 V			ASYNCHRONOUS	0.06 mA		32KX8		3.55 mm	8			0.0005 A	262144 bit	PARALLEL		EEPROM	5 V	1000000 Write/Erase Cycles	5 ms	100			YES	YES	NO			128 words				13.97 mm	11.43 mm
	Mfr Part No X28C64P-15	Xicor	Datasheet	-	-	Min: 1 Mult: 1			NO		28	150 ns	INTERSIL CORP	Intersil Corporation	X28C64P-15		8192 words	8000	70 °C		PLASTIC/EPOXY	DIP	DIP, DIP28,.6	DIP28,.6	RECTANGULAR	IN-LINE	Obsolete	DIP		5.29			5 V		e0		EAR99		Tin/Lead (Sn/Pb)			PAGE WRITE	8542.32.00.51	EEPROMs	CMOS	DUAL	THROUGH-HOLE		1	2.54 mm	unknown		28	R-PDIP-T28	Not Qualified			5.5 V	5 V	COMMERCIAL	4.5 V			ASYNCHRONOUS	0.06 mA		8KX8	3-STATE	4.82 mm	8			0.0002 A	65536 bit	PARALLEL		EEPROM	5 V	100000 Write/Erase Cycles	10 ms				YES	YES	NO			64 words				36.32 mm	15.24 mm
	Mfr Part No AM29F400BB-55SF	Cypress Semiconductor	Datasheet	-	-	Min: 1 Mult: 1			YES		44	55 ns	SPANSION INC	Spansion	AM29F400BB-55SF	3	262144 words	256000	85 °C	-40 °C	PLASTIC/EPOXY	SOP	LEAD FREE, MO-180AAA, SOP-44	SOP44,.63	RECTANGULAR	SMALL OUTLINE	Obsolete	SOIC	40	5.62		Yes	5 V		e3	Yes	EAR99	NOR TYPE	Matte Tin (Sn)			BOTTOM BOOT BLOCK	8542.32.00.51	Flash Memories	CMOS	DUAL	GULL WING	260	1	1.27 mm	unknown		44	R-PDSO-G44	Not Qualified			5.25 V	5 V	INDUSTRIAL	4.75 V			ASYNCHRONOUS	0.06 mA		256KX16		2.8 mm	16			0.000005 A	4194304 bit	PARALLEL		FLASH	5 V	1000000 Write/Erase Cycles				8	YES	YES	YES	1,2,1,7	16K,8K,32K,64K		YES	BOTTOM		28.2 mm	13.3 mm
	Mfr Part No AM29F200BT70EI	AMD	Datasheet	-	-	Min: 1 Mult: 1			YES		48	70 ns	ADVANCED MICRO DEVICES INC	AMD	AM29F200BT-70EI		131072 words	128000	85 °C	-40 °C	PLASTIC/EPOXY	TSOP1	TSOP1, TSSOP48,.8,20	TSSOP48,.8,20	RECTANGULAR	SMALL OUTLINE, THIN PROFILE	Transferred	TSOP1		5.1		No	5 V		e0		EAR99	NOR TYPE	Tin/Lead (Sn/Pb)			MINIMUM 1000K WRITE/ERASE CYCLE ;20 YEAR DATA RETENTION	8542.32.00.51	Flash Memories	CMOS	DUAL	GULL WING		1	0.5 mm	unknown		48	R-PDSO-G48	Not Qualified			5.5 V	5 V	INDUSTRIAL	4.5 V			ASYNCHRONOUS	0.06 mA		128KX16		1.2 mm	16			0.000005 A	2097152 bit	PARALLEL		FLASH	5 V	1000000 Write/Erase Cycles		20		8	YES	YES	YES	1,2,1,3	16K,8K,32K,64K		YES	TOP		18.4 mm	12 mm
	Mfr Part No X28HC256DI-12	Rochester Electronics	Datasheet	-	-	Min: 1 Mult: 1			NO	28	28	120 ns	XICOR INC	Xicor Inc	X28HC256DI-12		32768 words	32000	85 °C	-40 °C	CERAMIC, GLASS-SEALED	DIP	DIP, DIP28,.6	DIP28,.6	RECTANGULAR	IN-LINE	Transferred			5.65	Non-Compliant	No	5 V	Bulk	e0				Tin/Lead (Sn/Pb)			100000 ENDURANCE WRITE CYCLES; 100 YEARS DATA RETENTION		EEPROMs	CMOS	DUAL	THROUGH-HOLE		1	2.54 mm	unknown	120 GHz		R-GDIP-T28	Not Qualified			5.5 V	5 V	INDUSTRIAL	4.5 V	250 kB		ASYNCHRONOUS	0.06 mA	120 ns	32KX8	3-STATE	7.24 mm	8			0.0005 A	262144 bit	PARALLEL		EEPROM	5 V	1000000 Write/Erase Cycles	5 ms	100			YES	YES	NO			128 words				37.15 mm	15.24 mm		Contains Lead
	Mfr Part No X28HC256P-15	Intersil	Datasheet	-	-	Min: 1 Mult: 1			NO		28	150 ns	XICOR INC	Xicor Inc	X28HC256P-15		32768 words	32000	70 °C		PLASTIC/EPOXY	DIP	DIP, DIP28,.6	DIP28,.6	RECTANGULAR	IN-LINE	Transferred			5.65		No	5 V		e0				Tin/Lead (Sn/Pb)			100000 ENDURANCE WRITE CYCLES; 100 YEARS DATA RETENTION		EEPROMs	CMOS	DUAL	THROUGH-HOLE		1	2.54 mm	unknown			R-PDIP-T28	Not Qualified			5.5 V	5 V	COMMERCIAL	4.5 V			ASYNCHRONOUS	0.06 mA		32KX8	3-STATE	4.82 mm	8			0.0005 A	262144 bit	PARALLEL		EEPROM	5 V	1000000 Write/Erase Cycles	5 ms	100			YES	YES	NO			128 words				36.45 mm	15.24 mm
	Mfr Part No AM29F400BB-45EC	AMD	Datasheet	-	-	Min: 1 Mult: 1			YES		48	45 ns	ADVANCED MICRO DEVICES INC	AMD	AM29F400BB-45EC		262144 words	256000	70 °C		PLASTIC/EPOXY	TSOP1	TSOP1, TSSOP48,.8,20	TSSOP48,.8,20	RECTANGULAR	SMALL OUTLINE, THIN PROFILE	Transferred	TSOP1		7.92	Non-Compliant	No	5 V		e0		EAR99	NOR TYPE	Tin/Lead (Sn/Pb)			MINIMUM 1000K PROGRAM/ERASE CYCLE ;20 YEAR DATA RETENTION	8542.32.00.51	Flash Memories	CMOS	DUAL	GULL WING		1	0.5 mm	unknown		48	R-PDSO-G48	Not Qualified			5.25 V	5 V	COMMERCIAL	4.75 V			ASYNCHRONOUS	0.06 mA		256KX16		1.2 mm	16			0.000005 A	4194304 bit	PARALLEL		FLASH	5 V	1000000 Write/Erase Cycles		20		8	YES	YES	YES	1,2,1,7	16K,8K,32K,64K		YES	BOTTOM		18.4 mm	12 mm
	Mfr Part No M58WR032KU70ZA6U	Micron	Datasheet	-	-	Min: 1 Mult: 1			YES		44	70 ns	NUMONYX	Numonyx Memory Solutions	M58WR032KU70ZA6U		2097152 words	2000000	85 °C	-40 °C	PLASTIC/EPOXY	VFBGA	7.50 X 5 MM, 0.50 MM PITCH, ROHS COMPLIANT, VFBGA-44	BGA44,8X14,20	RECTANGULAR	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	Transferred	BGA	NOT SPECIFIED	5.41		Yes	1.8 V				3A991.B.1.A	NOR TYPE				SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	8542.32.00.51	Flash Memories	CMOS	BOTTOM	BALL	NOT SPECIFIED	1	0.5 mm	unknown		44	R-PBGA-B44	Not Qualified			2 V	1.8 V	INDUSTRIAL	1.7 V			ASYNCHRONOUS	0.06 mA		2MX16		1 mm	16			0.00001 A	33554432 bit	PARALLEL		FLASH	1.8 V						NO	NO	YES	8,63	4K,32K	4 words		TOP	YES	7.5 mm	5 mm
	Mfr Part No M58WR032KL70ZA6U	Micron	Datasheet	-	-	Min: 1 Mult: 1			YES		44	70 ns	STMICROELECTRONICS	STMicroelectronics	M58WR032KL70ZA6U		2097152 words	2000000	85 °C	-40 °C	PLASTIC/EPOXY	VFBGA	7.50 X 5 MM, 0.50 MM PITCH, ROHS COMPLIANT, VFBGA-44	BGA44,8X14,20	RECTANGULAR	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	Transferred	BGA	40	5.4		Yes	1.8 V				3A991.B.1.A	NOR TYPE				SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	8542.32.00.51	Flash Memories	CMOS	BOTTOM	BALL	260	1	0.5 mm	compliant		44	R-PBGA-B44	Not Qualified			2 V	1.8 V	INDUSTRIAL	1.7 V			ASYNCHRONOUS	0.06 mA		2MX16		1 mm	16			0.00001 A	33554432 bit	PARALLEL		FLASH	1.8 V						NO	NO	YES	8,63	4K,32K	4 words		BOTTOM	YES	7.5 mm	5 mm
	Mfr Part No AM29F200BB-55EF	Cypress Semiconductor	Datasheet	-	-	Min: 1 Mult: 1			YES		48	55 ns	SPANSION INC	Spansion	AM29F200BB-55EF	3	131072 words	128000	85 °C	-40 °C	PLASTIC/EPOXY	TSSOP	LEAD FREE, MO-142DD, TSOP-48	TSSOP48,.8,20	RECTANGULAR	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	Obsolete	TSOP1	40	5.62		Yes	5 V		e3	Yes	EAR99	NOR TYPE	Matte Tin (Sn)			BOTTOM BOOT BLOCK	8542.32.00.51	Flash Memories	CMOS	DUAL	GULL WING	260	1	0.5 mm	unknown		48	R-PDSO-G48	Not Qualified			5.5 V	5 V	INDUSTRIAL	4.5 V			ASYNCHRONOUS	0.06 mA		128KX16		1.2 mm	16			0.000005 A	2097152 bit	PARALLEL		FLASH	5 V	1000000 Write/Erase Cycles				8	YES	YES	YES	1,2,1,3	16K,8K,32K,64K		YES	BOTTOM		18.4 mm	12 mm
	Mfr Part No AS5LC512K8DJ-12L/XT	Micross	Datasheet	-	-	Min: 1 Mult: 1			YES	36	36	12 ns	MICROSS COMPONENTS	Micross Components	AS5LC512K8DJ-12L/XT		524288 words	512000	125 °C	-55 °C	PLASTIC/EPOXY	SOJ	PLASTIC, PSOJ-36	SOJ36,.44	RECTANGULAR	SMALL OUTLINE	Obsolete	SOJ		5.27	Non-Compliant		3.3 V				3A001.A.2.C			125 °C	-55 °C		8542.32.00.41	SRAMs	CMOS	DUAL	J BEND		1	1.27 mm	compliant		36	R-PDSO-J36	Not Qualified		3.3 V	3.6 V	3.3 V	MILITARY	3 V		1	ASYNCHRONOUS	0.06 mA		512KX8	3-STATE	3.79 mm	8	19 b	4 Mb	0.0065 A	4194304 bit	PARALLEL	COMMON	STANDARD SRAM					2 V											23.72 mm	10 mm	No
	Mfr Part No AM29F032B-75ED	Cypress Semiconductor	Datasheet	-	-	Min: 1 Mult: 1			YES		40	70 ns	ADVANCED MICRO DEVICES INC	AMD	AM29F032B-75ED		4194304 words	4000000	70 °C		PLASTIC/EPOXY	TSSOP	TSSOP, TSSOP40,.8,20	TSSOP40,.8,20	RECTANGULAR	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	Transferred			5.79		Yes	5 V					NOR TYPE						Flash Memories	CMOS	DUAL	GULL WING			0.5 mm	unknown			R-PDSO-G40	Not Qualified				5 V	COMMERCIAL		4 MB			0.06 mA		4MX8			8			0.000005 A	33554432 bit	PARALLEL		FLASH							YES	YES	YES	64	64K		YES
	Mfr Part No AM29F400BB-45EF	Cypress Semiconductor	Datasheet	-	-	Min: 1 Mult: 1			YES		48	45 ns	SPANSION INC	Spansion	AM29F400BB-45EF	3	262144 words	256000	85 °C	-40 °C	PLASTIC/EPOXY	TSOP1	LEAD FREE, MO-142BDD, TSOP-48	TSSOP48,.8,20	RECTANGULAR	SMALL OUTLINE, THIN PROFILE	Obsolete	TSOP1	40	5.63		Yes	5 V		e3	Yes	EAR99	NOR TYPE	Matte Tin (Sn)			BOTTOM BOOT BLOCK	8542.32.00.51	Flash Memories	CMOS	DUAL	GULL WING	260	1	0.5 mm	unknown		48	R-PDSO-G48	Not Qualified			5.25 V	5 V	INDUSTRIAL	4.75 V			ASYNCHRONOUS	0.06 mA		256KX16		1.2 mm	16			0.000005 A	4194304 bit	PARALLEL		FLASH	5 V	1000000 Write/Erase Cycles				8	YES	YES	YES	1,2,1,7	16K,8K,32K,64K		YES	BOTTOM		18.4 mm	12 mm

1
2
3
4
5
6

...
2
3
4
5
6