The category is 'Memory'
Memory (119)
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- Ihs Manufacturer
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- Supply Current-Max:
0.06 mA
Image | Part Number | Manufacturer | Datasheet | Availability | Pricing(USD) | Quantity | RoHS | Factory Lead Time | Surface Mount | Number of Pins | Number of Terminals | Access Time-Max | Ihs Manufacturer | Manufacturer | Manufacturer Part Number | Moisture Sensitivity Levels | Number of Words | Number of Words Code | Operating Temperature-Max | Operating Temperature-Min | Package Body Material | Package Code | Package Description | Package Equivalence Code | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Reflow Temperature-Max (s) | Risk Rank | RoHS | Rohs Code | Supply Voltage-Nom (Vsup) | Packaging | JESD-609 Code | Pbfree Code | ECCN Code | Type | Terminal Finish | Max Operating Temperature | Min Operating Temperature | Additional Feature | HTS Code | Subcategory | Technology | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Terminal Pitch | Reach Compliance Code | Frequency | Pin Count | JESD-30 Code | Qualification Status | Brand Name | Operating Supply Voltage | Supply Voltage-Max (Vsup) | Power Supplies | Temperature Grade | Supply Voltage-Min (Vsup) | Memory Size | Number of Ports | Operating Mode | Supply Current-Max | Access Time | Organization | Output Characteristics | Seated Height-Max | Memory Width | Address Bus Width | Density | Standby Current-Max | Memory Density | Parallel/Serial | I/O Type | Memory IC Type | Programming Voltage | Endurance | Write Cycle Time-Max (tWC) | Data Retention Time-Min | Standby Voltage-Min | Alternate Memory Width | Data Polling | Toggle Bit | Command User Interface | Number of Sectors/Size | Sector Size | Page Size | Ready/Busy | Boot Block | Common Flash Interface | Length | Width | Radiation Hardening | Lead Free |
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![]() | Mfr Part No MX23L12810TC-12 | Macronix International Co Ltd | Datasheet | - | - | Min: 1 Mult: 1 | YES | 48 | 120 ns | MACRONIX INTERNATIONAL CO LTD | 8388608 words | 8000000 | 70 °C | PLASTIC/EPOXY | TSOP1 | TSOP1, TSSOP48,.8,20 | TSSOP48,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | TSOP1 | No | 3.3 V | e0 | EAR99 | TIN LEAD | 8542.32.00.71 | DUAL | GULL WING | 1 | 0.5 mm | unknown | 48 | R-PDSO-G48 | Not Qualified | 3.6 V | COMMERCIAL | 3 V | ASYNCHRONOUS | 0.06 mA | 8MX16 | 1.2 mm | 16 | 0.000005 A | 134217728 bit | PARALLEL | MASK ROM | 8 | 18.4 mm | 12 mm | ||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No MX23C8100TC-10 | Macronix International Co Ltd | Datasheet | - | - | Min: 1 Mult: 1 | YES | 48 | 100 ns | MACRONIX INTERNATIONAL CO LTD | 524288 words | 512000 | 70 °C | PLASTIC/EPOXY | TSOP1 | TSOP1, TSSOP48,.8,20 | TSSOP48,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | TSOP1 | No | 5 V | e0 | EAR99 | TIN LEAD | 8542.32.00.71 | DUAL | GULL WING | 1 | 0.5 mm | unknown | 48 | R-PDSO-G48 | Not Qualified | 5.5 V | COMMERCIAL | 4.5 V | ASYNCHRONOUS | 0.06 mA | 512KX16 | 1.2 mm | 16 | 0.00005 A | 8388608 bit | PARALLEL | MASK ROM | 18.4 mm | 12 mm | |||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No MX23L12811MC-12 | Macronix International Co Ltd | Datasheet | - | - | Min: 1 Mult: 1 | YES | 44 | 120 ns | MACRONIX INTERNATIONAL CO LTD | 8388608 words | 8000000 | 70 °C | PLASTIC/EPOXY | SOP | SOP, SOP44,.63 | SOP44,.63 | RECTANGULAR | SMALL OUTLINE | Obsolete | SOIC | No | 3.3 V | e0 | EAR99 | TIN LEAD | 8542.32.00.71 | DUAL | GULL WING | 1 | 1.27 mm | unknown | 44 | R-PDSO-G44 | Not Qualified | 3.6 V | COMMERCIAL | 3 V | ASYNCHRONOUS | 0.06 mA | 8MX16 | 3 mm | 16 | 0.000005 A | 134217728 bit | PARALLEL | MASK ROM | 28.5 mm | 12.6 mm | |||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No KM23C32000A-15 | Samsung Semiconductor | Datasheet | - | - | Min: 1 Mult: 1 | NO | 42 | 150 ns | SAMSUNG SEMICONDUCTOR INC | 2097152 words | 2000000 | 70 °C | PLASTIC/EPOXY | DIP | DIP, DIP42,.6 | DIP42,.6 | RECTANGULAR | IN-LINE | Obsolete | DIP | No | 5 V | e0 | EAR99 | Tin/Lead (Sn/Pb) | 8542.32.00.71 | DUAL | THROUGH-HOLE | 1 | 2.54 mm | unknown | 42 | R-PDIP-T42 | Not Qualified | 5.5 V | COMMERCIAL | 4.5 V | ASYNCHRONOUS | 0.06 mA | 2MX16 | 5.08 mm | 16 | 0.00005 A | 33554432 bit | PARALLEL | MASK ROM | 52.25 mm | 15.24 mm | |||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No MX23C1610PC-10 | Macronix International Co Ltd | Datasheet | - | - | Min: 1 Mult: 1 | NO | 42 | 100 ns | MACRONIX INTERNATIONAL CO LTD | 1048576 words | 1000000 | 70 °C | PLASTIC/EPOXY | DIP | DIP, DIP42,.6 | DIP42,.6 | RECTANGULAR | IN-LINE | Obsolete | DIP | No | 5 V | e0 | EAR99 | TIN LEAD | 8542.32.00.71 | DUAL | THROUGH-HOLE | 1 | 2.54 mm | unknown | 42 | R-PDIP-T42 | Not Qualified | 5.5 V | COMMERCIAL | 4.5 V | ASYNCHRONOUS | 0.06 mA | 1MX16 | 3-STATE | 4.9 mm | 16 | 0.00005 A | 16777216 bit | PARALLEL | MASK ROM | 8 | 51.94 mm | 15.24 mm | |||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No X28HC256SIZ-90 | Intersil | Datasheet | - | - | Min: 1 Mult: 1 | 21 Weeks | YES | 28 | 90 ns | INTERSIL CORP | Intersil Corporation | X28HC256SIZ-90 | 3 | 32768 words | 32000 | 85 °C | -40 °C | PLASTIC/EPOXY | SOP | SOP, SOP28,.4 | SOP28,.4 | RECTANGULAR | SMALL OUTLINE | Unknown | PDIP, PLCC, SOIC | 40 | 5.53 | 5 V | e3 | EAR99 | Matte Tin (Sn) - annealed | 8542.32.00.51 | EEPROMs | CMOS | DUAL | GULL WING | 260 | 1 | 1.27 mm | compliant | 28, 32, 28 | R-PDSO-G28 | Not Qualified | Intersil | 5.5 V | 5 V | INDUSTRIAL | 4.5 V | ASYNCHRONOUS | 0.06 mA | 32KX8 | 2.65 mm | 8 | 0.0005 A | 262144 bit | PARALLEL | EEPROM | 5 V | 1000000 Write/Erase Cycles | 5 ms | YES | YES | NO | 128 words | 17.9 mm | 7.5 mm | |||||||||||||||||||||||||||||
![]() | Mfr Part No X28HC256JI-90T1 | Intersil | Datasheet | - | - | Min: 1 Mult: 1 | YES | 32 | 90 ns | INTERSIL CORP | Intersil Corporation | X28HC256JI-90T1 | 3 | 32768 words | 32000 | 85 °C | -40 °C | PLASTIC/EPOXY | QCCJ | QCCJ, LDCC32,.5X.6 | LDCC32,.5X.6 | RECTANGULAR | CHIP CARRIER | Obsolete | PDIP, PLCC, SOIC | NOT SPECIFIED | 5.46 | No | 5 V | e0 | EAR99 | Tin/Lead (Sn/Pb) | 100000 ENDURANCE WRITE CYCLES; 100 YEARS DATA RETENTION | 8542.32.00.51 | EEPROMs | CMOS | QUAD | J BEND | 240 | 1 | 1.27 mm | not_compliant | 28, 32, 28 | R-PQCC-J32 | Not Qualified | Intersil | 5.5 V | 5 V | INDUSTRIAL | 4.5 V | ASYNCHRONOUS | 0.06 mA | 32KX8 | 3.55 mm | 8 | 0.0005 A | 262144 bit | PARALLEL | EEPROM | 5 V | 1000000 Write/Erase Cycles | 5 ms | 100 | YES | YES | NO | 128 words | 13.97 mm | 11.43 mm | |||||||||||||||||||||||||||
![]() | Mfr Part No X28C64P-15 | Xicor | Datasheet | - | - | Min: 1 Mult: 1 | NO | 28 | 150 ns | INTERSIL CORP | Intersil Corporation | X28C64P-15 | 8192 words | 8000 | 70 °C | PLASTIC/EPOXY | DIP | DIP, DIP28,.6 | DIP28,.6 | RECTANGULAR | IN-LINE | Obsolete | DIP | 5.29 | 5 V | e0 | EAR99 | Tin/Lead (Sn/Pb) | PAGE WRITE | 8542.32.00.51 | EEPROMs | CMOS | DUAL | THROUGH-HOLE | 1 | 2.54 mm | unknown | 28 | R-PDIP-T28 | Not Qualified | 5.5 V | 5 V | COMMERCIAL | 4.5 V | ASYNCHRONOUS | 0.06 mA | 8KX8 | 3-STATE | 4.82 mm | 8 | 0.0002 A | 65536 bit | PARALLEL | EEPROM | 5 V | 100000 Write/Erase Cycles | 10 ms | YES | YES | NO | 64 words | 36.32 mm | 15.24 mm | |||||||||||||||||||||||||||||||||
![]() | Mfr Part No AM29F400BB-55SF | Cypress Semiconductor | Datasheet | - | - | Min: 1 Mult: 1 | YES | 44 | 55 ns | SPANSION INC | Spansion | AM29F400BB-55SF | 3 | 262144 words | 256000 | 85 °C | -40 °C | PLASTIC/EPOXY | SOP | LEAD FREE, MO-180AAA, SOP-44 | SOP44,.63 | RECTANGULAR | SMALL OUTLINE | Obsolete | SOIC | 40 | 5.62 | Yes | 5 V | e3 | Yes | EAR99 | NOR TYPE | Matte Tin (Sn) | BOTTOM BOOT BLOCK | 8542.32.00.51 | Flash Memories | CMOS | DUAL | GULL WING | 260 | 1 | 1.27 mm | unknown | 44 | R-PDSO-G44 | Not Qualified | 5.25 V | 5 V | INDUSTRIAL | 4.75 V | ASYNCHRONOUS | 0.06 mA | 256KX16 | 2.8 mm | 16 | 0.000005 A | 4194304 bit | PARALLEL | FLASH | 5 V | 1000000 Write/Erase Cycles | 8 | YES | YES | YES | 1,2,1,7 | 16K,8K,32K,64K | YES | BOTTOM | 28.2 mm | 13.3 mm | ||||||||||||||||||||||||
![]() | Mfr Part No AM29F200BT70EI | AMD | Datasheet | - | - | Min: 1 Mult: 1 | YES | 48 | 70 ns | ADVANCED MICRO DEVICES INC | AMD | AM29F200BT-70EI | 131072 words | 128000 | 85 °C | -40 °C | PLASTIC/EPOXY | TSOP1 | TSOP1, TSSOP48,.8,20 | TSSOP48,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Transferred | TSOP1 | 5.1 | No | 5 V | e0 | EAR99 | NOR TYPE | Tin/Lead (Sn/Pb) | MINIMUM 1000K WRITE/ERASE CYCLE ;20 YEAR DATA RETENTION | 8542.32.00.51 | Flash Memories | CMOS | DUAL | GULL WING | 1 | 0.5 mm | unknown | 48 | R-PDSO-G48 | Not Qualified | 5.5 V | 5 V | INDUSTRIAL | 4.5 V | ASYNCHRONOUS | 0.06 mA | 128KX16 | 1.2 mm | 16 | 0.000005 A | 2097152 bit | PARALLEL | FLASH | 5 V | 1000000 Write/Erase Cycles | 20 | 8 | YES | YES | YES | 1,2,1,3 | 16K,8K,32K,64K | YES | TOP | 18.4 mm | 12 mm | |||||||||||||||||||||||||||
![]() | Mfr Part No X28HC256DI-12 | Rochester Electronics | Datasheet | - | - | Min: 1 Mult: 1 | NO | 28 | 28 | 120 ns | XICOR INC | Xicor Inc | X28HC256DI-12 | 32768 words | 32000 | 85 °C | -40 °C | CERAMIC, GLASS-SEALED | DIP | DIP, DIP28,.6 | DIP28,.6 | RECTANGULAR | IN-LINE | Transferred | 5.65 | Non-Compliant | No | 5 V | Bulk | e0 | Tin/Lead (Sn/Pb) | 100000 ENDURANCE WRITE CYCLES; 100 YEARS DATA RETENTION | EEPROMs | CMOS | DUAL | THROUGH-HOLE | 1 | 2.54 mm | unknown | 120 GHz | R-GDIP-T28 | Not Qualified | 5.5 V | 5 V | INDUSTRIAL | 4.5 V | 250 kB | ASYNCHRONOUS | 0.06 mA | 120 ns | 32KX8 | 3-STATE | 7.24 mm | 8 | 0.0005 A | 262144 bit | PARALLEL | EEPROM | 5 V | 1000000 Write/Erase Cycles | 5 ms | 100 | YES | YES | NO | 128 words | 37.15 mm | 15.24 mm | Contains Lead | |||||||||||||||||||||||||||
![]() | Mfr Part No X28HC256P-15 | Intersil | Datasheet | - | - | Min: 1 Mult: 1 | NO | 28 | 150 ns | XICOR INC | Xicor Inc | X28HC256P-15 | 32768 words | 32000 | 70 °C | PLASTIC/EPOXY | DIP | DIP, DIP28,.6 | DIP28,.6 | RECTANGULAR | IN-LINE | Transferred | 5.65 | No | 5 V | e0 | Tin/Lead (Sn/Pb) | 100000 ENDURANCE WRITE CYCLES; 100 YEARS DATA RETENTION | EEPROMs | CMOS | DUAL | THROUGH-HOLE | 1 | 2.54 mm | unknown | R-PDIP-T28 | Not Qualified | 5.5 V | 5 V | COMMERCIAL | 4.5 V | ASYNCHRONOUS | 0.06 mA | 32KX8 | 3-STATE | 4.82 mm | 8 | 0.0005 A | 262144 bit | PARALLEL | EEPROM | 5 V | 1000000 Write/Erase Cycles | 5 ms | 100 | YES | YES | NO | 128 words | 36.45 mm | 15.24 mm | |||||||||||||||||||||||||||||||||||
![]() | Mfr Part No AM29F400BB-45EC | AMD | Datasheet | - | - | Min: 1 Mult: 1 | YES | 48 | 45 ns | ADVANCED MICRO DEVICES INC | AMD | AM29F400BB-45EC | 262144 words | 256000 | 70 °C | PLASTIC/EPOXY | TSOP1 | TSOP1, TSSOP48,.8,20 | TSSOP48,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Transferred | TSOP1 | 7.92 | Non-Compliant | No | 5 V | e0 | EAR99 | NOR TYPE | Tin/Lead (Sn/Pb) | MINIMUM 1000K PROGRAM/ERASE CYCLE ;20 YEAR DATA RETENTION | 8542.32.00.51 | Flash Memories | CMOS | DUAL | GULL WING | 1 | 0.5 mm | unknown | 48 | R-PDSO-G48 | Not Qualified | 5.25 V | 5 V | COMMERCIAL | 4.75 V | ASYNCHRONOUS | 0.06 mA | 256KX16 | 1.2 mm | 16 | 0.000005 A | 4194304 bit | PARALLEL | FLASH | 5 V | 1000000 Write/Erase Cycles | 20 | 8 | YES | YES | YES | 1,2,1,7 | 16K,8K,32K,64K | YES | BOTTOM | 18.4 mm | 12 mm | |||||||||||||||||||||||||||
![]() | Mfr Part No M58WR032KU70ZA6U | Micron | Datasheet | - | - | Min: 1 Mult: 1 | YES | 44 | 70 ns | NUMONYX | Numonyx Memory Solutions | M58WR032KU70ZA6U | 2097152 words | 2000000 | 85 °C | -40 °C | PLASTIC/EPOXY | VFBGA | 7.50 X 5 MM, 0.50 MM PITCH, ROHS COMPLIANT, VFBGA-44 | BGA44,8X14,20 | RECTANGULAR | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | Transferred | BGA | NOT SPECIFIED | 5.41 | Yes | 1.8 V | 3A991.B.1.A | NOR TYPE | SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE | 8542.32.00.51 | Flash Memories | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 0.5 mm | unknown | 44 | R-PBGA-B44 | Not Qualified | 2 V | 1.8 V | INDUSTRIAL | 1.7 V | ASYNCHRONOUS | 0.06 mA | 2MX16 | 1 mm | 16 | 0.00001 A | 33554432 bit | PARALLEL | FLASH | 1.8 V | NO | NO | YES | 8,63 | 4K,32K | 4 words | TOP | YES | 7.5 mm | 5 mm | |||||||||||||||||||||||||||||
![]() | Mfr Part No M58WR032KL70ZA6U | Micron | Datasheet | - | - | Min: 1 Mult: 1 | YES | 44 | 70 ns | STMICROELECTRONICS | STMicroelectronics | M58WR032KL70ZA6U | 2097152 words | 2000000 | 85 °C | -40 °C | PLASTIC/EPOXY | VFBGA | 7.50 X 5 MM, 0.50 MM PITCH, ROHS COMPLIANT, VFBGA-44 | BGA44,8X14,20 | RECTANGULAR | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | Transferred | BGA | 40 | 5.4 | Yes | 1.8 V | 3A991.B.1.A | NOR TYPE | SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE | 8542.32.00.51 | Flash Memories | CMOS | BOTTOM | BALL | 260 | 1 | 0.5 mm | compliant | 44 | R-PBGA-B44 | Not Qualified | 2 V | 1.8 V | INDUSTRIAL | 1.7 V | ASYNCHRONOUS | 0.06 mA | 2MX16 | 1 mm | 16 | 0.00001 A | 33554432 bit | PARALLEL | FLASH | 1.8 V | NO | NO | YES | 8,63 | 4K,32K | 4 words | BOTTOM | YES | 7.5 mm | 5 mm | |||||||||||||||||||||||||||||
![]() | Mfr Part No AM29F200BB-55EF | Cypress Semiconductor | Datasheet | - | - | Min: 1 Mult: 1 | YES | 48 | 55 ns | SPANSION INC | Spansion | AM29F200BB-55EF | 3 | 131072 words | 128000 | 85 °C | -40 °C | PLASTIC/EPOXY | TSSOP | LEAD FREE, MO-142DD, TSOP-48 | TSSOP48,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | Obsolete | TSOP1 | 40 | 5.62 | Yes | 5 V | e3 | Yes | EAR99 | NOR TYPE | Matte Tin (Sn) | BOTTOM BOOT BLOCK | 8542.32.00.51 | Flash Memories | CMOS | DUAL | GULL WING | 260 | 1 | 0.5 mm | unknown | 48 | R-PDSO-G48 | Not Qualified | 5.5 V | 5 V | INDUSTRIAL | 4.5 V | ASYNCHRONOUS | 0.06 mA | 128KX16 | 1.2 mm | 16 | 0.000005 A | 2097152 bit | PARALLEL | FLASH | 5 V | 1000000 Write/Erase Cycles | 8 | YES | YES | YES | 1,2,1,3 | 16K,8K,32K,64K | YES | BOTTOM | 18.4 mm | 12 mm | ||||||||||||||||||||||||
![]() | Mfr Part No AM29F032B-75ED | Cypress Semiconductor | Datasheet | - | - | Min: 1 Mult: 1 | YES | 40 | 70 ns | ADVANCED MICRO DEVICES INC | AMD | AM29F032B-75ED | 4194304 words | 4000000 | 70 °C | PLASTIC/EPOXY | TSSOP | TSSOP, TSSOP40,.8,20 | TSSOP40,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | Transferred | 5.79 | Yes | 5 V | NOR TYPE | Flash Memories | CMOS | DUAL | GULL WING | 0.5 mm | unknown | R-PDSO-G40 | Not Qualified | 5 V | COMMERCIAL | 4 MB | 0.06 mA | 4MX8 | 8 | 0.000005 A | 33554432 bit | PARALLEL | FLASH | YES | YES | YES | 64 | 64K | YES | ||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No AS5LC512K8DJ-12L/XT | Micross | Datasheet | - | - | Min: 1 Mult: 1 | YES | 36 | 36 | 12 ns | MICROSS COMPONENTS | Micross Components | AS5LC512K8DJ-12L/XT | 524288 words | 512000 | 125 °C | -55 °C | PLASTIC/EPOXY | SOJ | PLASTIC, PSOJ-36 | SOJ36,.44 | RECTANGULAR | SMALL OUTLINE | Obsolete | SOJ | 5.27 | Non-Compliant | 3.3 V | 3A001.A.2.C | 125 °C | -55 °C | 8542.32.00.41 | SRAMs | CMOS | DUAL | J BEND | 1 | 1.27 mm | compliant | 36 | R-PDSO-J36 | Not Qualified | 3.3 V | 3.6 V | 3.3 V | MILITARY | 3 V | 1 | ASYNCHRONOUS | 0.06 mA | 512KX8 | 3-STATE | 3.79 mm | 8 | 19 b | 4 Mb | 0.0065 A | 4194304 bit | PARALLEL | COMMON | STANDARD SRAM | 2 V | 23.72 mm | 10 mm | No | |||||||||||||||||||||||||||||||
![]() | Mfr Part No AM29F400BB-45EF | Cypress Semiconductor | Datasheet | - | - | Min: 1 Mult: 1 | YES | 48 | 45 ns | SPANSION INC | Spansion | AM29F400BB-45EF | 3 | 262144 words | 256000 | 85 °C | -40 °C | PLASTIC/EPOXY | TSOP1 | LEAD FREE, MO-142BDD, TSOP-48 | TSSOP48,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | TSOP1 | 40 | 5.63 | Yes | 5 V | e3 | Yes | EAR99 | NOR TYPE | Matte Tin (Sn) | BOTTOM BOOT BLOCK | 8542.32.00.51 | Flash Memories | CMOS | DUAL | GULL WING | 260 | 1 | 0.5 mm | unknown | 48 | R-PDSO-G48 | Not Qualified | 5.25 V | 5 V | INDUSTRIAL | 4.75 V | ASYNCHRONOUS | 0.06 mA | 256KX16 | 1.2 mm | 16 | 0.000005 A | 4194304 bit | PARALLEL | FLASH | 5 V | 1000000 Write/Erase Cycles | 8 | YES | YES | YES | 1,2,1,7 | 16K,8K,32K,64K | YES | BOTTOM | 18.4 mm | 12 mm |
MX23L12810TC-12
Macronix International Co Ltd
Package:Memory
Price: please inquire
MX23C8100TC-10
Macronix International Co Ltd
Package:Memory
Price: please inquire
MX23L12811MC-12
Macronix International Co Ltd
Package:Memory
Price: please inquire
KM23C32000A-15
Samsung Semiconductor
Package:Memory
Price: please inquire
MX23C1610PC-10
Macronix International Co Ltd
Package:Memory
Price: please inquire
X28HC256SIZ-90
Intersil
Package:Memory
Price: please inquire
X28HC256JI-90T1
Intersil
Package:Memory
Price: please inquire
X28C64P-15
Xicor
Package:Memory
Price: please inquire
AM29F400BB-55SF
Cypress Semiconductor
Package:Memory
Price: please inquire
AM29F200BT70EI
AMD
Package:Memory
Price: please inquire
X28HC256DI-12
Rochester Electronics
Package:Memory
Price: please inquire
X28HC256P-15
Intersil
Package:Memory
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AM29F400BB-45EC
AMD
Package:Memory
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M58WR032KU70ZA6U
Micron
Package:Memory
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M58WR032KL70ZA6U
Micron
Package:Memory
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AM29F200BB-55EF
Cypress Semiconductor
Package:Memory
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AM29F032B-75ED
Cypress Semiconductor
Package:Memory
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AS5LC512K8DJ-12L/XT
Micross
Package:Memory
Price: please inquire
AM29F400BB-45EF
Cypress Semiconductor
Package:Memory
Price: please inquire
