The category is 'Memory'
Memory (138)
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- Supply Current-Max:
0.07 mA
Image | Part Number | Manufacturer | Datasheet | Availability | Pricing(USD) | Quantity | RoHS | Factory Lead Time | Contact plating | Mounting Type | Package / Case | Surface Mount | Number of pins | Supplier Device Package | Diode Element Material | Number of Terminals | Access Time-Max | Base Product Number | Breakdown Voltage-Nom | Bus Type | Clock Frequency-Max (fCLK) | Connector | Connector pinout layout | Contacts pitch | Dimensions | Electrical mounting | Factory Pack QuantityFactory Pack Quantity | Gross weight | Ihs Manufacturer | Interface Type | Kind of connector | Manufacturer | Manufacturer Part Number | Maximum Operating Supply Voltage | Maximum Operating Temperature | Memory Types | Mfr | Minimum Operating Supply Voltage | Minimum Operating Temperature | Moisture Sensitive | Moisture Sensitivity Levels | Mounting | Mounting Styles | Number of Elements | Number of Words | Number of Words Code | Operating Temperature-Max | Operating Temperature-Min | Package | Package Body Material | Package Code | Package Description | Package Equivalence Code | Package Shape | Package Style | Package Type | Part Life Cycle Code | Part Package Code | Power Dissipation (Max) | Product Status | Reflow Temperature-Max (s) | Risk Rank | RoHS | Rohs Code | Spatial orientation | Supplier Package | Supply Voltage-Max | Supply Voltage-Min | Supply Voltage-Nom (Vsup) | Type of connector | Unit Weight | Usage Level | Operating temperature | Operating Temperature | Packaging | Series | JESD-609 Code | Pbfree Code | ECCN Code | Type | Terminal Finish | Additional Feature | HTS Code | Subcategory | Technology | Voltage - Supply | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Terminal Pitch | Reach Compliance Code | Current rating | Time@Peak Reflow Temperature-Max (s) | Pin Count | JESD-30 Code | Qualification Status | Operating Supply Voltage | Polarity | Supply Voltage-Max (Vsup) | Power Supplies | Temperature Grade | Supply Voltage-Min (Vsup) | Configuration | Memory Size | Number of Ports | Diode Type | Operating Mode | Case Connection | Supply Current-Max | Access Time | Memory Format | Memory Interface | Data Bus Width | Organization | Output Characteristics | Seated Height-Max | Memory Width | Write Cycle Time - Word, Page | Density | Standby Current-Max | Rep Pk Reverse Voltage-Max | Memory Density | Screening Level | Parallel/Serial | Non-rep Peak Rev Power Dis-Max | I/O Type | Memory IC Type | Programming Voltage | Standby Voltage-Min | Rated voltage | Output Enable | Breakdown Voltage-Min | Refresh Cycles | Clamping Voltage-Max | Sequential Burst Length | Interleaved Burst Length | Breakdown Voltage-Max | Access Mode | Profile | Self Refresh | Memory Organization | Height | Length | Width | Plating thickness | Flammability rating |
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 | Mfr Part No M5M51008DFP-70HIST | Renesas | Datasheet | 160 | - | Min: 1 Mult: 1 | YES | 32 | 70 ns | RENESAS TECHNOLOGY CORP | Renesas Electronics Corporation | M5M51008DFP-70HI#ST | 131072 words | 128000 | 85 °C | -40 °C | PLASTIC/EPOXY | SOP | SOP, SOP32,.56 | SOP32,.56 | RECTANGULAR | SMALL OUTLINE | Transferred | SOIC | 5.33 | Yes | 5 V | EAR99 | 8542.32.00.41 | SRAMs | CMOS | DUAL | GULL WING | 1 | 1.27 mm | unknown | 32 | R-PDSO-G32 | Not Qualified | 5.5 V | 5 V | INDUSTRIAL | 4.5 V | ASYNCHRONOUS | 0.07 mA | 128KX8 | 3-STATE | 3.05 mm | 8 | 1048576 bit | PARALLEL | COMMON | STANDARD SRAM | 2 V | 20.75 mm | 11.4 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No LP621024DM-55LLF | AMIC Technology | Datasheet | - | - | Min: 1 Mult: 1 | YES | 32 | 55 ns | AMIC TECHNOLOGY CORP | AMIC Technology | LP621024DM-55LLF | 131072 words | 128000 | 70 °C | PLASTIC/EPOXY | SOP | SOP, SOP32,.56 | SOP32,.56 | RECTANGULAR | SMALL OUTLINE | Contact Manufacturer | SOIC | 5.45 | Yes | 5 V | Yes | EAR99 | 8542.32.00.41 | SRAMs | CMOS | DUAL | GULL WING | NOT SPECIFIED | 1 | 1.27 mm | unknown | NOT SPECIFIED | 32 | R-PDSO-G32 | Not Qualified | 5.5 V | 5 V | COMMERCIAL | 4.5 V | ASYNCHRONOUS | 0.07 mA | 128KX8 | 3-STATE | 3 mm | 8 | 0.00001 A | 1048576 bit | PARALLEL | COMMON | STANDARD SRAM | 2 V | YES | 20.45 mm | 11.3 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No LP621024DX-70LLF | AMIC Technology | Datasheet | - | - | Min: 1 Mult: 1 | NO | SILICON | 2 | 70 ns | 9.1 | AMIC TECHNOLOGY CORP | AMIC Technology | LP621024DX-70LLF | 1 | 131072 words | 128000 | 70 °C | UNSPECIFIED | LSSOP | LSSOP, TSSOP32,.56,20 | TSSOP32,.56,20 | ROUND | LONG FORM | Obsolete | TSSOP | 1 | NOT SPECIFIED | 5.75 | Yes | 5 V | Yes | EAR99 | 8542.32.00.41 | SRAMs | AVALANCHE | AXIAL | WIRE | NOT SPECIFIED | 1 | 0.5 mm | unknown | NOT SPECIFIED | 32 | O-XALF-W2 | Not Qualified | UNIDIRECTIONAL | 5.5 V | 5 V | COMMERCIAL | 4.5 V | SINGLE | TRANS VOLTAGE SUPPRESSOR DIODE | ASYNCHRONOUS | ISOLATED | 0.07 mA | 128KX8 | 3-STATE | 1.25 mm | 8 | 0.00001 A | 7.78 | 1048576 bit | PARALLEL | 400 | COMMON | STANDARD SRAM | 2 V | 8.65 | 13.4 | 9.55 | 11.8 mm | 8 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No CY14B104LA-ZS25XI | Infineon Technologies | Datasheet | 240 |
| Min: 1 Mult: 1 | 1 Week | Surface Mount | TSOP-44 | YES | 44-TSOP II | 44 | 25 ns | CY14B104 | 18.51 x 10.26 x 1.04mm | 270 | CYPRESS SEMICONDUCTOR CORP | Parallel | CY14B104LA-ZS25XI | 3.6 V | +85 °C | Non-Volatile | Infineon Technologies | 2.7 V | -40 °C | Yes | 3 | 512K | 512000 | 85 °C | -40 °C | Tray | PLASTIC/EPOXY | TSOP2 | TSOP2, TSOP44,.46,32 | TSOP44,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | TSOP | Active | TSOP2 | Active | 30 | 1.68 | Details | Yes | 3 V | 0.147880 oz | -40°C ~ 85°C (TA) | Tray | CY14B104LA | e4 | 3A991.B.2.A | Nickel/Palladium/Gold (Ni/Pd/Au) | 8542.32.00.41 | NVSRAM (Non-Volatile SRAM) | 2.7V ~ 3.6V | DUAL | GULL WING | 260 | 1 | 0.8 mm | compliant | 44 | R-PDSO-G44 | Not Qualified | 3.6 V | 3/3.3 V | INDUSTRIAL | 2.7 V | 4Mbit | ASYNCHRONOUS | 0.07 mA | 25 ns | NVSRAM | Parallel | 8bit | 512KX8 | 1.194 mm | 8 | 25ns | 0.005 A | 4194304 bit | PARALLEL | NON-VOLATILE SRAM | 512K x 8 | 1.04mm | 18.51mm | 10.26mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No CY14B104LA-ZS20XIT | Infineon Technologies | Datasheet | 16 |
| Min: 1 Mult: 1 | Surface Mount | 44-TSOP (0.400, 10.16mm Width) | YES | 44-TSOP II | 44 | 20 ns | CY14B104 | 1000 | CYPRESS SEMICONDUCTOR CORP | CY14B104LA-ZS20XIT | Non-Volatile | Infineon Technologies | Yes | 3 | 524288 words | 512000 | 85 °C | -40 °C | Tape & Reel (TR) | PLASTIC/EPOXY | TSOP2 | TSOP2, TSOP44,.46,32 | TSOP44,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Active | TSOP2 | Active | 30 | 5.45 | Details | Yes | 3 V | -40°C ~ 85°C (TA) | Reel | CY14B104LA | e4 | Yes | 3A991.B.2.B | Nickel/Palladium/Gold (Ni/Pd/Au) | 8542.32.00.41 | NVSRAM (Non-Volatile SRAM) | 2.7V ~ 3.6V | DUAL | GULL WING | 260 | 1 | 0.8 mm | compliant | 44 | R-PDSO-G44 | Not Qualified | 3.6 V | 3/3.3 V | INDUSTRIAL | 2.7 V | 4Mbit | ASYNCHRONOUS | 0.07 mA | 20 ns | NVSRAM | Parallel | 512KX8 | 1.194 mm | 8 | 20ns | 0.005 A | 4194304 bit | PARALLEL | NON-VOLATILE SRAM | 512K x 8 | 18.415 mm | 10.16 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No CY14B104NA-ZS20XIT | Infineon Technologies | Datasheet | 39 |
| Min: 1 Mult: 1 | Surface Mount | 44-TSOP (0.400, 10.16mm Width) | YES | 44-TSOP II | 44 | 20 ns | CY14B104 | 1000 | CYPRESS SEMICONDUCTOR CORP | CY14B104NA-ZS20XIT | Non-Volatile | Infineon Technologies | Yes | 3 | 262144 words | 256000 | 85 °C | -40 °C | Tape & Reel (TR) | PLASTIC/EPOXY | TSOP2 | TSOP2, TSOP44,.46,32 | TSOP44,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Active | TSOP2 | Active | 30 | 5.45 | Details | Yes | 3 V | -40°C ~ 85°C (TA) | Reel | CY14B104NA | e4 | 3A991.B.2.B | Nickel/Palladium/Gold (Ni/Pd/Au) | 8542.32.00.41 | NVSRAM (Non-Volatile SRAM) | 2.7V ~ 3.6V | DUAL | GULL WING | 260 | 1 | 0.8 mm | compliant | 44 | R-PDSO-G44 | Not Qualified | 3.6 V | 3/3.3 V | INDUSTRIAL | 2.7 V | 4Mbit | ASYNCHRONOUS | 0.07 mA | 20 ns | NVSRAM | Parallel | 256KX16 | 1.194 mm | 16 | 20ns | 0.005 A | 4194304 bit | PARALLEL | NON-VOLATILE SRAM | 256K x 16 | 18.415 mm | 10.16 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No CY14B104M-ZSP25XI | Infineon Technologies | Datasheet | 30 |
| Min: 1 Mult: 1 | 1 Week | Surface Mount | TSOP II-54 | YES | 54-TSOP II | 54 | 25 ns | CY14B104 | Parallel | 1080 | CYPRESS SEMICONDUCTOR CORP | CY14B104M-ZSP25XI | + 85 C | Non-Volatile | Infineon Technologies | - 40 C | Yes | 3 | Surface Mount | SMD/SMT | 262144 words | 256000 | 85 °C | -40 °C | Tray | PLASTIC/EPOXY | TSOP2 | TSOP2, TSOP54,.46,32 | TSOP54,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Active | TSOP2 | Active | 30 | 1.91 | Details | Yes | TSOP-II | 3.6 V | 2.7 V | 3 V | Industrial grade | -40 to 85 °C | Tray | CY14B104M | e3 | 3A991.B.2.A | NVSRAM | Matte Tin (Sn) | 8542.32.00.41 | NVSRAM (Non-Volatile SRAM) | 2.7V ~ 3.6V | DUAL | GULL WING | 260 | 1 | 0.8 mm | compliant | 54 | R-PDSO-G54 | Not Qualified | 3.3 V | 3.6 V | 3/3.3 V | INDUSTRIAL | 2.7 V | 4Mbit | ASYNCHRONOUS | 0.07 mA | 25 ns | NVSRAM | Parallel | 16 Bit | 256Kx16 | 1.2 mm | 16 | 25ns | 4 Mbit | 0.005 A | 4194304 bit | Industrial | PARALLEL | NON-VOLATILE SRAM | 256K x 16 | 22.415 mm | 10.16 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No LP621024DM-70LLIF | AMIC Technology | Datasheet | - | - | Min: 1 Mult: 1 | YES | 32 | 70 ns | AMIC TECHNOLOGY CORP | AMIC Technology | LP621024DM-70LLIF | 131072 words | 128000 | 85 °C | -40 °C | PLASTIC/EPOXY | SOP | SOP, SOP32,.56 | SOP32,.56 | RECTANGULAR | SMALL OUTLINE | Contact Manufacturer | 5.76 | Yes | 5 V | SRAMs | CMOS | DUAL | GULL WING | 1 | 1.27 mm | unknown | R-PDSO-G32 | Not Qualified | 5.5 V | 5 V | INDUSTRIAL | 4.5 V | ASYNCHRONOUS | 0.07 mA | 128KX8 | 3-STATE | 3 mm | 8 | 0.00002 A | 1048576 bit | PARALLEL | COMMON | STANDARD SRAM | 2 V | YES | 20.45 mm | 11.3 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No AS7C256A-12TC | Alliance Memory | Datasheet | - | - | Min: 1 Mult: 1 | YES | 28 | 12 ns | ALLIANCE SEMICONDUCTOR CORP | Alliance Semiconductor Corporation | AS7C256A-12TC | 32768 words | 32000 | 70 °C | PLASTIC/EPOXY | TSOP1 | TSOP1, TSSOP28,.53,22 | TSSOP28,.53,22 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Transferred | TSOP | NOT SPECIFIED | 5.42 | No | 5 V | e0 | EAR99 | Tin/Lead (Sn/Pb) | 8542.32.00.41 | SRAMs | CMOS | DUAL | GULL WING | NOT SPECIFIED | 1 | 0.55 mm | unknown | 28 | R-PDSO-G28 | Not Qualified | 5.5 V | 5 V | COMMERCIAL | 4.5 V | ASYNCHRONOUS | 0.07 mA | 32KX8 | 3-STATE | 1.2 mm | 8 | 0.002 A | 262144 bit | PARALLEL | COMMON | STANDARD SRAM | 4.5 V | 11.8 mm | 8 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No M5M5256AP-70L | Mitsubishi Electric | Datasheet | - | - | Min: 1 Mult: 1 | NO | 28 | 70 ns | MITSUBISHI ELECTRIC CORP | 32768 words | 32000 | 70 °C | PLASTIC/EPOXY | DIP | DIP, DIP28,.6 | DIP28,.6 | RECTANGULAR | IN-LINE | Obsolete | No | 5 V | e0 | EAR99 | Tin/Lead (Sn/Pb) | 8542.32.00.41 | DUAL | THROUGH-HOLE | 1 | 2.54 mm | unknown | R-PDIP-T28 | Not Qualified | 5.5 V | COMMERCIAL | 4.5 V | ASYNCHRONOUS | 0.07 mA | 32KX8 | 3-STATE | 8 | 0.00005 A | 262144 bit | PARALLEL | COMMON | STANDARD SRAM | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No NN514256J-60 | United Microelectronics Corporation | Datasheet | - | - | Min: 1 Mult: 1 | YES | 20 | 60 ns | NIPPON STEEL SEMICONDUCTOR CORP | 262144 words | 256000 | 70 °C | PLASTIC/EPOXY | SOJ | SOJ, SOJ20/26,.34 | SOJ20/26,.34 | RECTANGULAR | SMALL OUTLINE | Obsolete | No | 5 V | e0 | EAR99 | TIN LEAD | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | 8542.32.00.02 | DUAL | J BEND | 1 | 1.27 mm | unknown | R-PDSO-J20 | Not Qualified | 5.5 V | COMMERCIAL | 4.5 V | 1 | ASYNCHRONOUS | 0.07 mA | 256KX4 | 3-STATE | 4 | 0.001 A | 1048576 bit | COMMON | FAST PAGE DRAM | 512 | FAST PAGE | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr Part No W9864G6JB-7 | Winbond Electronics Corp | Datasheet | - | - | Min: 1 Mult: 1 | YES | 60 | 5.5 ns | 143 MHz | WINBOND ELECTRONICS CORP | 4194304 words | 4000000 | 70 °C | PLASTIC/EPOXY | TFBGA | TFBGA, | BGA60,7X15,25 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Not Recommended | BGA | Yes | 3.3 V | EAR99 | AUTO/SELF REFRESH | 8542.32.00.02 | BOTTOM | BALL | NOT SPECIFIED | 1 | 0.65 mm | compliant | NOT SPECIFIED | 60 | R-PBGA-B60 | 3.6 V | COMMERCIAL | 3 V | 1 | SYNCHRONOUS | 0.07 mA | 4MX16 | 3-STATE | 1.1 mm | 16 | 0.002 A | 67108864 bit | COMMON | SYNCHRONOUS DRAM | 4096 | 1,2,4,8,FP | 1,2,4,8 | FOUR BANK PAGE BURST | YES | 10.1 mm | 6.4 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr Part No AM9044DDCB | AMD | Datasheet | 508 | - | Min: 1 Mult: 1 | NO | 18 | 250 ns | ADVANCED MICRO DEVICES INC | 4096 words | 4000 | 70 °C | CERAMIC, GLASS-SEALED | DIP | DIP, DIP18,.3 | DIP18,.3 | RECTANGULAR | IN-LINE | Obsolete | DIP | No | 5 V | e0 | No | EAR99 | TIN LEAD | 8542.32.00.41 | DUAL | THROUGH-HOLE | 1 | 2.54 mm | unknown | 18 | R-GDIP-T18 | Not Qualified | 5.5 V | COMMERCIAL | 4.5 V | 1 | ASYNCHRONOUS | 0.07 mA | 4KX1 | 3-STATE | 5.08 mm | 1 | 4096 bit | PARALLEL | SEPARATE | STANDARD SRAM | 4.5 V | NO | 22.86 mm | 7.62 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No TC55V400AFT-55 | Toshiba America Electronic Components | Datasheet | - | - | Min: 1 Mult: 1 | YES | 48 | 55 ns | TOSHIBA CORP | 262144 words | 256000 | 85 °C | -40 °C | PLASTIC/EPOXY | TSOP1 | TSOP1, TSSOP48,.55,20 | TSSOP48,.55,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | TSOP1 | No | 3 V | 3A991.B.2.A | 8542.32.00.41 | DUAL | GULL WING | NOT SPECIFIED | 1 | 0.5 mm | unknown | NOT SPECIFIED | 48 | R-PDSO-G48 | Not Qualified | 3.6 V | INDUSTRIAL | 2.3 V | ASYNCHRONOUS | 0.07 mA | 256KX16 | 3-STATE | 1.2 mm | 16 | 4194304 bit | PARALLEL | COMMON | STANDARD SRAM | 1.5 V | 12.4 mm | 12 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr Part No M5M51008DFP-70HI | Mitsubishi Electric | Datasheet | - | - | Min: 1 Mult: 1 | tinned | YES | 17 | 32 | 70 ns | socket | 1x17 | 1.27mm | THT | 1.14 g | MITSUBISHI ELECTRIC CORP | female | 131072 words | 128000 | 85 °C | -40 °C | PLASTIC/EPOXY | SOP | SOP, SOP32,.56 | SOP32,.56 | RECTANGULAR | SMALL OUTLINE | Transferred | SOIC | No | straight | 5 V | pin strips | -40...163°C | e0 | EAR99 | Tin/Lead (Sn/Pb) | 8542.32.00.41 | DUAL | GULL WING | 1 | 1.27 mm | unknown | 1.5A | 32 | R-PDSO-G32 | Not Qualified | 5.5 V | INDUSTRIAL | 4.5 V | ASYNCHRONOUS | 0.07 mA | 128KX8 | 3-STATE | 3.05 mm | 8 | 1048576 bit | PARALLEL | COMMON | STANDARD SRAM | 2 V | 125V | bronze | 20.75 mm | 11.4 mm | 4µm | UL94V-0 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No M5M41000BP-8 | Mitsubishi Electric | Datasheet | - | - | Min: 1 Mult: 1 | NO | 18 | 80 ns | MITSUBISHI ELECTRIC CORP | 1048576 words | 1000000 | 70 °C | PLASTIC/EPOXY | DIP | DIP, DIP18,.3 | DIP18,.3 | RECTANGULAR | IN-LINE | Obsolete | DIP | No | 5 V | e0 | No | EAR99 | TIN LEAD | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | 8542.32.00.02 | DUAL | THROUGH-HOLE | 1 | 2.54 mm | unknown | 18 | R-PDIP-T18 | Not Qualified | 5.5 V | COMMERCIAL | 4.5 V | 1 | ASYNCHRONOUS | 0.07 mA | 1MX1 | 3-STATE | 4.7 mm | 1 | 0.0005 A | 1048576 bit | SEPARATE | FAST PAGE DRAM | 512 | FAST PAGE | 22 mm | 7.62 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr Part No TC55257CSPL-10 | Toshiba America Electronic Components | Datasheet | - | - | Min: 1 Mult: 1 | NO | 28 | 100 ns | TOSHIBA CORP | 32768 words | 32000 | 70 °C | PLASTIC/EPOXY | DIP | DIP, DIP28,.3 | DIP28,.3 | RECTANGULAR | IN-LINE | Active | DIP | No | 5 V | e0 | No | EAR99 | TIN LEAD | 8542.32.00.41 | DUAL | THROUGH-HOLE | 1 | 2.54 mm | unknown | 28 | R-PDIP-T28 | Not Qualified | 5.5 V | COMMERCIAL | 4.5 V | ASYNCHRONOUS | 0.07 mA | 32KX8 | 3-STATE | 4.45 mm | 8 | 0.00005 A | 262144 bit | PARALLEL | COMMON | STANDARD SRAM | 2 V | 34.9 mm | 7.62 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No AM2764A-25DI | AMD | Datasheet | 517 | - | Min: 1 Mult: 1 | NO | 28 | 250 ns | ADVANCED MICRO DEVICES INC | 8192 words | 8000 | 85 °C | -40 °C | CERAMIC, GLASS-SEALED | WDIP | WDIP, DIP28,.6 | DIP28,.6 | RECTANGULAR | IN-LINE, WINDOW | Obsolete | DIP | No | 5 V | e0 | No | EAR99 | TIN LEAD | 8542.32.00.71 | DUAL | THROUGH-HOLE | 1 | 2.54 mm | unknown | 28 | R-GDIP-T28 | Not Qualified | 5.5 V | INDUSTRIAL | 4.5 V | ASYNCHRONOUS | 0.07 mA | 8KX8 | 3-STATE | 5.588 mm | 8 | 65536 bit | PARALLEL | COMMON | OTP ROM | 12.5 V | 37.1475 mm | 15.24 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No MCM511001AP80 | Freescale Semiconductor | Datasheet | - | - | Min: 1 Mult: 1 | NO | 18 | 80 ns | MOTOROLA SEMICONDUCTOR PRODUCTS | 1048576 words | 1000000 | 70 °C | PLASTIC/EPOXY | DIP | DIP, DIP18,.3 | DIP18,.3 | RECTANGULAR | IN-LINE | Obsolete | No | 5 V | e0 | Tin/Lead (Sn/Pb) | DUAL | THROUGH-HOLE | 2.54 mm | unknown | R-PDIP-T18 | Not Qualified | 5 V | COMMERCIAL | 0.07 mA | 1MX1 | 3-STATE | 1 | 0.001 A | 1048576 bit | SEPARATE | NIBBLE MODE DRAM | 512 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr Part No CY7C171-45DMB | Cypress Semiconductor | Datasheet | - | - | Min: 1 Mult: 1 | NO | 24 | 45 ns | CYPRESS SEMICONDUCTOR CORP | 4096 words | 4000 | 125 °C | -55 °C | CERAMIC, GLASS-SEALED | DIP | 0.300 INCH, CERDIP-24 | DIP24,.3 | RECTANGULAR | IN-LINE | Obsolete | DIP | No | 5 V | e0 | 3A001.A.2.C | Tin/Lead (Sn/Pb) | AUTOMATIC POWER-DOWN; TRANSPARENT WRITE | 8542.32.00.41 | DUAL | THROUGH-HOLE | 1 | 2.54 mm | not_compliant | 24 | R-GDIP-T24 | Not Qualified | 5.5 V | MILITARY | 4.5 V | 1 | ASYNCHRONOUS | 0.07 mA | 4KX4 | 3-STATE | 5.08 mm | 4 | 0.02 A | 16384 bit | 38535Q/M;38534H;883B | PARALLEL | SEPARATE | STANDARD SRAM | 4.5 V | NO | 31.877 mm | 7.62 mm |
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M5M51008DFP-70HIST
Renesas
Package:Memory
Price: please inquire
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LP621024DM-55LLF
AMIC Technology
Package:Memory
Price: please inquire
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LP621024DX-70LLF
AMIC Technology
Package:Memory
Price: please inquire
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CY14B104LA-ZS25XI
Infineon Technologies
Package:Memory
36.607252
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CY14B104LA-ZS20XIT
Infineon Technologies
Package:Memory
44.349558
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CY14B104NA-ZS20XIT
Infineon Technologies
Package:Memory
44.349558
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CY14B104M-ZSP25XI
Infineon Technologies
Package:Memory
33.975588
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LP621024DM-70LLIF
AMIC Technology
Package:Memory
Price: please inquire
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AS7C256A-12TC
Alliance Memory
Package:Memory
Price: please inquire
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M5M5256AP-70L
Mitsubishi Electric
Package:Memory
Price: please inquire
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NN514256J-60
United Microelectronics Corporation
Package:Memory
Price: please inquire
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W9864G6JB-7
Winbond Electronics Corp
Package:Memory
Price: please inquire
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AM9044DDCB
AMD
Package:Memory
Price: please inquire
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