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The category is 'Memory'

Memory (138)

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Supply Current-Max:
0.07 mA

Image	Part Number	Manufacturer	Datasheet	Availability	Pricing(USD)	Quantity	RoHS	Factory Lead Time	Lifecycle Status	Mounting Type	Package / Case	Surface Mount	Number of Pins	Supplier Device Package	Number of Terminals	Access Time-Max	Brand	Factory Pack QuantityFactory Pack Quantity	Ihs Manufacturer	Manufacturer	Manufacturer Part Number	Maximum Operating Supply Voltage	Memory Types	Mfr	Minimum Operating Supply Voltage	Moisture Sensitivity Levels	Mounting	Number of I/O Lines	Number of Words	Number of Words Code	Operating Temperature-Max	Operating Temperature-Min	Package	Package Body Material	Package Code	Package Description	Package Equivalence Code	Package Shape	Package Style	Part Life Cycle Code	Part Package Code	Product Status	Reflow Temperature-Max (s)	Risk Rank	RoHS	Rohs Code	Supplier Package	Supply Voltage-Nom (Vsup)	Timing Type	Typical Operating Supply Voltage	Usage Level	Operating Temperature	Packaging	Series	JESD-609 Code	Pbfree Code	ECCN Code	Type	Terminal Finish	Max Operating Temperature	Min Operating Temperature	Additional Feature	HTS Code	Subcategory	Technology	Voltage - Supply	Terminal Position	Terminal Form	Peak Reflow Temperature (Cel)	Number of Functions	Terminal Pitch	Reach Compliance Code	Pin Count	JESD-30 Code	Qualification Status	Operating Supply Voltage	Supply Voltage-Max (Vsup)	Power Supplies	Temperature Grade	Supply Voltage-Min (Vsup)	Voltage	Interface	Max Supply Voltage	Min Supply Voltage	Memory Size	Number of Ports	Nominal Supply Current	Operating Mode	Supply Current-Max	Access Time	Memory Format	Memory Interface	Organization	Output Characteristics	Seated Height-Max	Memory Width	Write Cycle Time - Word, Page	Address Bus Width	Product Type	Density	Standby Current-Max	Memory Density	Screening Level	Parallel/Serial	I/O Type	Sync/Async	Word Size	Memory IC Type	Programming Voltage	Endurance	Standby Voltage-Min	Data Polling	Toggle Bit	Command User Interface	Output Enable	Number of Sectors/Size	Sector Size	Page Size	Ready/Busy	Boot Block	Common Flash Interface	Reverse Pinout	Product Category	Memory Organization	Length	Width	Radiation Hardening
	Mfr Part No SRM20100LRM10	Seiko Epson Corporation	Datasheet	-	-	Min: 1 Mult: 1						YES			32	100 ns			SEIKO EPSON CORP										131072 words	128000	70 °C			PLASTIC/EPOXY	TSOP1-R	TSOP1-R, TSSOP32,.8,20	TSSOP32,.8,20	RECTANGULAR	SMALL OUTLINE, THIN PROFILE	Obsolete						No		5 V							e0		EAR99		Tin/Lead (Sn/Pb)				8542.32.00.41				DUAL	GULL WING		1	0.5 mm	unknown		R-PDSO-G32	Not Qualified		5.5 V		COMMERCIAL	4.5 V						1		ASYNCHRONOUS	0.07 mA				128KX8	3-STATE	1.2 mm	8					0.00005 A	1048576 bit		PARALLEL	COMMON			STANDARD SRAM			2 V				YES							YES			18.4 mm	8 mm
	Mfr Part No STK15C88-WF45I	Cypress Semiconductor	Datasheet	-	-	Min: 1 Mult: 1						NO			28	45 ns			SIMTEK CORP										32768 words	32000	85 °C	-40 °C		PLASTIC/EPOXY	DIP	DIP, DIP28,.6	DIP28,.6	RECTANGULAR	IN-LINE	Obsolete	DIP					Yes		5 V							e3	Yes	EAR99		MATTE TIN				8542.32.00.41				DUAL	THROUGH-HOLE	260	1	2.54 mm	unknown	28	R-PDIP-T28	Not Qualified		5.5 V		INDUSTRIAL	4.5 V								ASYNCHRONOUS	0.07 mA				32KX8		4.57 mm	8					0.0015 A	262144 bit		PARALLEL				NON-VOLATILE SRAM																	36.83 mm	15.24 mm
	Mfr Part No CY7C187-35PC	Cypress Semiconductor	Datasheet	4 In Stock	-	Min: 1 Mult: 1						NO			22	35 ns			CYPRESS SEMICONDUCTOR CORP	Cypress Semiconductor	CY7C187-35PC								65536 words	64000	70 °C			PLASTIC/EPOXY	DIP	0.300 INCH, PLASTIC, DIP-22	DIP22,.3	RECTANGULAR	IN-LINE	Obsolete	DIP		NOT SPECIFIED	8.65		No		5 V							e0		EAR99		Tin/Lead (Sn/Pb)			AUTOMATIC POWER-DOWN	8542.32.00.41	SRAMs	CMOS		DUAL	THROUGH-HOLE	NOT SPECIFIED	1	2.54 mm	not_compliant	22	R-PDIP-T22	Not Qualified		5.5 V	5 V	COMMERCIAL	4.5 V						1		ASYNCHRONOUS	0.07 mA				64KX1	3-STATE	4.826 mm	1					0.02 A	65536 bit		PARALLEL	SEPARATE			STANDARD SRAM			4.5 V				NO										27.813 mm	7.62 mm
	Mfr Part No M58WR064KB7AZB6F	Micron	Datasheet	-	-	Min: 1 Mult: 1			Obsolete (Last Updated: 2 years ago)			YES	56		56	70 ns			MICRON TECHNOLOGY INC	Micron Technology Inc	M58WR064KB7AZB6F		NOR						4194304 words	4000000	85 °C	-40 °C		PLASTIC/EPOXY	VFBGA	VFBGA, BGA56,7X8,30	BGA56,7X8,30	RECTANGULAR	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	Obsolete	BGA		30	5.33	Compliant	Yes		1.8 V					Tape & Reel		e1	Yes	3A991.B.1.A	NOR TYPE	TIN SILVER COPPER	85 °C	-40 °C	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	8542.32.00.51	Flash Memories	CMOS		BOTTOM	BALL	260	1	0.75 mm	compliant	56	R-PBGA-B56	Not Qualified	1.8 V	2 V	1.8 V	INDUSTRIAL	1.7 V	1.7 V	Parallel, Serial	2 V	1.7 V			30 mA	ASYNCHRONOUS	0.07 mA	70 ns			4MX16		1 mm	16		22 b		64 Mb	0.00005 A	67108864 bit		PARALLEL		Asynchronous	16 b	FLASH	1.8 V			NO	NO	YES		8,127	4K,32K	4 words		BOTTOM	YES				9 mm	7.7 mm	No
	Mfr Part No GS71108AU-12I	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		6 Weeks				YES			48	12 ns	GSI Technology	240	GSI TECHNOLOGY	GSI Technology	GS71108AU-12I	3.6 V			3 V	3	Surface Mount	8 Bit	128 kWords	128000	85 °C	-40 °C		PLASTIC/EPOXY	TFBGA	TFBGA, BGA48,6X8,30	BGA48,6X8,30	RECTANGULAR	GRID ARRAY, THIN PROFILE, FINE PITCH	Active	BGA		NOT SPECIFIED	5.22		No	FBGA	3.3 V	Asynchronous	3.3000 V	Industrial grade	-40 to 85 °C		GS71108AGU	e0	No	3A991.B.2.B		Tin/Lead (Sn/Pb)				8542.32.00.41	Memory & Data Storage	CMOS		BOTTOM	BALL	NOT SPECIFIED	1	0.75 mm	compliant	48	R-PBGA-B48	Not Qualified		3.6 V	3.3 V	INDUSTRIAL	3 V						1		ASYNCHRONOUS	0.07 mA				128KX8	3-STATE	1.2 mm	8		17 Bit	SRAM	1 Mbit	0.005 A	1048576 bit	Industrial	PARALLEL	COMMON			STANDARD SRAM			3 V												SRAM		8 mm	6 mm
	Mfr Part No M58WR064KB70ZB6F	Micron	Datasheet	2 In Stock	-	Min: 1 Mult: 1						YES			56	70 ns			MICRON TECHNOLOGY INC	Micron Technology Inc	M58WR064KB70ZB6F								4194304 words	4000000	85 °C	-40 °C		PLASTIC/EPOXY	VFBGA	VFBGA, BGA56,7X8,30	BGA56,7X8,30	RECTANGULAR	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	Obsolete	BGA		30	5.33		Yes		1.8 V							e1	Yes	3A991.B.1.A	NOR TYPE	TIN SILVER COPPER			SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	8542.32.00.51	Flash Memories	CMOS		BOTTOM	BALL	260	1	0.75 mm	compliant	56	R-PBGA-B56	Not Qualified		2 V	1.8 V	INDUSTRIAL	1.7 V								ASYNCHRONOUS	0.07 mA				4MX16		1 mm	16					0.00005 A	67108864 bit		PARALLEL				FLASH	1.8 V			NO	NO	YES		8,127	4K,32K	4 words		BOTTOM	YES				9 mm	7.7 mm
	Mfr Part No NM29N16S	National Semiconductor	Datasheet	-	-	Min: 1 Mult: 1						YES			40	48 ns			NATIONAL SEMICONDUCTOR CORP	National Semiconductor Corporation	NM29N16S								2097152 words	2000000	70 °C			PLASTIC/EPOXY	TSOP2	TSOP2, TSOP40/44,.46,32	TSOP40/44,.46,32	RECTANGULAR	SMALL OUTLINE, THIN PROFILE	Obsolete			NOT SPECIFIED	5.86		No		5 V							e0		EAR99		Tin/Lead (Sn/Pb)			100K WRITE/ERASE ENDURANCE MIN.	8542.32.00.51	Flash Memories	CMOS		DUAL	GULL WING	NOT SPECIFIED	1	0.8 mm	unknown		R-PDSO-G40	Not Qualified		5.25 V	5 V	COMMERCIAL	4.75 V								ASYNCHRONOUS	0.07 mA				2MX8	3-STATE	1.2 mm	8					0.0001 A	16777216 bit		PARALLEL				FLASH	5 V	100000 Write/Erase Cycles		NO	NO	YES		512	4K	256 words	YES						18.41 mm	10.16 mm
	Mfr Part No M58WR064KT70ZB6E	Micron	Datasheet	7196 In Stock	-	Min: 1 Mult: 1						YES			56	70 ns			MICRON TECHNOLOGY INC	Micron Technology Inc	M58WR064KT70ZB6E								4194304 words	4000000	85 °C	-40 °C		PLASTIC/EPOXY	VFBGA	7.70 X 9 MM, 0.75 MM PITCH, ROHS COMPLIANT, VFBGA-56	BGA56,7X8,30	RECTANGULAR	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	Obsolete	BGA		30	5.83		Yes		1.8 V							e1	Yes	3A991.B.1.A	NOR TYPE	TIN SILVER COPPER			SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	8542.32.00.51	Flash Memories	CMOS		BOTTOM	BALL	260	1	0.75 mm	compliant	56	R-PBGA-B56	Not Qualified		2 V	1.8 V	INDUSTRIAL	1.7 V								ASYNCHRONOUS	0.07 mA				4MX16		1 mm	16					0.00005 A	67108864 bit		PARALLEL				FLASH	1.8 V			NO	NO	YES		8,127	4K,32K	4 words		TOP	YES				9 mm	7.7 mm
	Mfr Part No M58WR032KB7AZB6F	Micron	Datasheet	-	-	Min: 1 Mult: 1						YES			56	70 ns			MICRON TECHNOLOGY INC	Micron Technology Inc	M58WR032KB7AZB6F								2097152 words	2000000	85 °C	-40 °C		PLASTIC/EPOXY	VFBGA	VFBGA, BGA56,7X8,30	BGA56,7X8,30	RECTANGULAR	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	Obsolete	BGA		30	5.33		Yes		1.8 V							e1	Yes	3A991.B.1.A	NOR TYPE	TIN SILVER COPPER			SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	8542.32.00.51	Flash Memories	CMOS		BOTTOM	BALL	260	1	0.75 mm	compliant	56	R-PBGA-B56	Not Qualified		2 V	1.8 V	INDUSTRIAL	1.7 V								ASYNCHRONOUS	0.07 mA				2MX16		1 mm	16					0.00005 A	33554432 bit		PARALLEL				FLASH	1.8 V			NO	NO	YES		8,63	4K,32K	4 words		BOTTOM	YES				9 mm	7.7 mm
	Mfr Part No M58WR032KT70ZB6E	Micron	Datasheet	-	-	Min: 1 Mult: 1						YES			56	70 ns			NUMONYX	Numonyx Memory Solutions	M58WR032KT70ZB6E								2097152 words	2000000	85 °C	-40 °C		PLASTIC/EPOXY	VFBGA	VFBGA, BGA56,7X8,30	BGA56,7X8,30	RECTANGULAR	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	Transferred	BGA		NOT SPECIFIED	5.21		Yes		1.8 V									3A991.B.1.A	NOR TYPE				SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	8542.32.00.51	Flash Memories	CMOS		BOTTOM	BALL	NOT SPECIFIED	1	0.75 mm	unknown	56	R-PBGA-B56	Not Qualified		2 V	1.8 V	INDUSTRIAL	1.7 V								ASYNCHRONOUS	0.07 mA				2MX16		1 mm	16					0.00005 A	33554432 bit		PARALLEL				FLASH	1.8 V			NO	NO	YES		8,63	4K,32K	4 words		TOP	YES				9 mm	7.7 mm
	Mfr Part No GS71108AU-12IT	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		6 Weeks				YES			48	12 ns			GSI TECHNOLOGY	GSI Technology	GS71108AU-12IT					3			131072 words	128000	85 °C	-40 °C		PLASTIC/EPOXY	TFBGA	TFBGA, BGA48,6X8,30	BGA48,6X8,30	RECTANGULAR	GRID ARRAY, THIN PROFILE, FINE PITCH	Active	BGA		NOT SPECIFIED	5.22	Compliant	No		3.3 V					Tape & Reel		e0	No	3A991.B.2.B		Tin/Lead (Sn/Pb)	85 °C	-40 °C		8542.32.00.41	SRAMs	CMOS		BOTTOM	BALL	NOT SPECIFIED	1	0.75 mm	compliant	48	R-PBGA-B48	Not Qualified	3.3 V	3.6 V	3.3 V	INDUSTRIAL	3 V						1		ASYNCHRONOUS	0.07 mA				128KX8	3-STATE	1.2 mm	8		17 b		1 Mb	0.005 A	1048576 bit		PARALLEL	COMMON			STANDARD SRAM			3 V														8 mm	6 mm	No
	Mfr Part No IS61WV6416DBLL-8TLI	ISSI	Datasheet	885 In Stock	-	Min: 1 Mult: 1						YES			44	8 ns			INTEGRATED SILICON SOLUTION INC	Integrated Silicon Solution Inc	IS61WV6416DBLL-8TLI								65536 words	64000	85 °C	-40 °C		PLASTIC/EPOXY	TSOP2	TSOP2, TSOP44,.46,32	TSOP44,.46,32	RECTANGULAR	SMALL OUTLINE, THIN PROFILE	Active	TSOP2			5.58		Yes		3 V									3A991.B.2.B						8542.32.00.41	SRAMs	CMOS		DUAL	GULL WING		1	0.8 mm	compliant	44	R-PDSO-G44	Not Qualified		3.6 V	2.5/3.3 V	INDUSTRIAL	2.4 V								ASYNCHRONOUS	0.07 mA				64KX16	3-STATE	1.2 mm	16					0.000055 A	1048576 bit		PARALLEL	COMMON			STANDARD SRAM			2 V														18.41 mm	10.16 mm
	Mfr Part No 8403606JA	Intersil	Datasheet	44 In Stock	-	Min: 1 Mult: 1				Through Hole	24-CDIP (0.600, 15.24mm)	NO		24-CERDIP	24	70 ns			INTERSIL CORP	Intersil Corporation	8403606JA		Volatile	Intersil					2048 words	2000	125 °C	-55 °C	Bulk	CERAMIC, GLASS-SEALED	DIP	DIP, DIP24,.6	DIP24,.6	RECTANGULAR	IN-LINE	Transferred	DIP	Active	NOT APPLICABLE	5.25	Compliant	No		5 V			Military grade	-55°C ~ 125°C (TA)	Bulk	-	e0	No	3A001.A.2.C		Tin/Lead (Sn/Pb) - hot dipped	125 °C	-55 °C		8542.32.00.41	SRAMs	SRAM - Asynchronous	4.5V ~ 5.5V	DUAL	THROUGH-HOLE	NOT APPLICABLE	1	2.54 mm	not_compliant	24	R-GDIP-T24	Qualified	5 V	5.5 V	5 V	MILITARY	4.5 V					16Kbit	1		ASYNCHRONOUS	0.07 mA	70 ns	SRAM	Parallel	2KX8	3-STATE	5.72 mm	8	70ns	11 b		16 kb	0.000025 A	16384 bit	MIL-STD-883	PARALLEL	COMMON			STANDARD SRAM			2 V													2K x 8		15.24 mm	No
	Mfr Part No M58WR064KT70ZB6F	Micron	Datasheet	-	-	Min: 1 Mult: 1						YES			56	70 ns			MICRON TECHNOLOGY INC	Micron Technology Inc	M58WR064KT70ZB6F								4194304 words	4000000	85 °C	-40 °C		PLASTIC/EPOXY	VFBGA	7.70 X 9 MM, 0.75 MM PITCH, ROHS COMPLIANT, VFBGA-56	BGA56,7X8,30	RECTANGULAR	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	Obsolete	BGA		30	5.83		Yes		1.8 V							e1	Yes	3A991.B.1.A	NOR TYPE	TIN SILVER COPPER			SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	8542.32.00.51	Flash Memories	CMOS		BOTTOM	BALL	260	1	0.75 mm	compliant	56	R-PBGA-B56	Not Qualified		2 V	1.8 V	INDUSTRIAL	1.7 V								ASYNCHRONOUS	0.07 mA				4MX16		1 mm	16					0.00005 A	67108864 bit		PARALLEL				FLASH	1.8 V			NO	NO	YES		8,127	4K,32K	4 words		TOP	YES				9 mm	7.7 mm
	Mfr Part No M5M51008DRV70HI	Renesas	Datasheet	25296 In Stock	-	Min: 1 Mult: 1						YES			32	70 ns			RENESAS ELECTRONICS CORP	Renesas Electronics Corporation	M5M51008DRV-70HI					2			131072 words	128000	85 °C	-40 °C		PLASTIC/EPOXY	TSOP1-R	8 X 20 MM, REVERSE, TSOP-32	TSSOP32,.8,20	RECTANGULAR	SMALL OUTLINE, THIN PROFILE	Transferred	TSOP		20	5.48		Yes		5 V									EAR99						8542.32.00.41	SRAMs	CMOS		DUAL	GULL WING	260	1	0.5 mm	unknown	32	R-PDSO-G32	Not Qualified		5.5 V	5 V	INDUSTRIAL	4.5 V								ASYNCHRONOUS	0.07 mA				128KX8	3-STATE	1.2 mm	8						1048576 bit		PARALLEL	COMMON			STANDARD SRAM			2 V											YES			18.4 mm	8 mm
	Mfr Part No M58WR032KT70ZB6F	Micron	Datasheet	-	-	Min: 1 Mult: 1						YES			56	70 ns			MICRON TECHNOLOGY INC	Micron Technology Inc	M58WR032KT70ZB6F								2097152 words	2000000	85 °C	-40 °C		PLASTIC/EPOXY	VFBGA	VFBGA, BGA56,7X8,30	BGA56,7X8,30	RECTANGULAR	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	Obsolete	BGA		30	5.82		Yes		1.8 V							e1	Yes	3A991.B.1.A	NOR TYPE	TIN SILVER COPPER			SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	8542.32.00.51	Flash Memories	CMOS		BOTTOM	BALL	260	1	0.75 mm	compliant	56	R-PBGA-B56	Not Qualified		2 V	1.8 V	INDUSTRIAL	1.7 V								ASYNCHRONOUS	0.07 mA				2MX16		1 mm	16					0.00005 A	33554432 bit		PARALLEL				FLASH	1.8 V			NO	NO	YES		8,63	4K,32K	4 words		TOP	YES				9 mm	7.7 mm
	Mfr Part No 5962-9232404MXC	Cypress Semiconductor	Datasheet	-	-	Min: 1 Mult: 1						NO			28	55 ns			SIMTEK CORP	Simtek Corporation	5962-9232404MXC								8192 words	8000	125 °C	-55 °C		CERAMIC, METAL-SEALED COFIRED	DIP	DIP, DIP28,.3	DIP28,.3	RECTANGULAR	IN-LINE	Transferred			NOT SPECIFIED	5.78		No		5 V			Military grade				e0		3A001.A.2.C		Tin/Lead (Sn85Pb15)			SOFTWARE STORE/RECALL	8542.32.00.41	SRAMs	CMOS		DUAL	THROUGH-HOLE	NOT SPECIFIED	1	2.54 mm	unknown		R-CDIP-T28	Not Qualified		5.5 V	5 V	MILITARY	4.5 V						1		ASYNCHRONOUS	0.07 mA				8KX8	3-STATE	4.14 mm	8					0.002 A	65536 bit	MIL-STD-883	PARALLEL				NON-VOLATILE SRAM							YES										35.56 mm	7.62 mm
	Mfr Part No NM29N16R	National Semiconductor	Datasheet	-	-	Min: 1 Mult: 1						YES			40	48 ns			NATIONAL SEMICONDUCTOR CORP	National Semiconductor Corporation	NM29N16R								2097152 words	2000000	70 °C			PLASTIC/EPOXY	TSOP2-R	TSOP2-R, TSOP40/44,.46,32	TSOP40/44,.46,32	RECTANGULAR	SMALL OUTLINE, THIN PROFILE	Obsolete			NOT SPECIFIED	5.91		No		5 V							e0		EAR99		Tin/Lead (Sn/Pb)			100K WRITE/ERASE ENDURANCE MIN.	8542.32.00.51	Flash Memories	CMOS		DUAL	GULL WING	NOT SPECIFIED	1	0.8 mm	unknown		R-PDSO-G40	Not Qualified		5.25 V	5 V	COMMERCIAL	4.75 V								ASYNCHRONOUS	0.07 mA				2MX8	3-STATE	1.2 mm	8					0.0001 A	16777216 bit		PARALLEL				FLASH	5 V	100000 Write/Erase Cycles		NO	NO	YES		512	4K	256 words	YES			YES			18.41 mm	10.16 mm

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