The category is 'Memory'
Memory (70)
- All Manufacturers
- Access Time-Max
- Ihs Manufacturer
- JESD-30 Code
- Memory Density
- Memory IC Type
- Memory Width
- Number of Terminals
- Number of Words
- Number of Words Code
- Operating Temperature-Max
- Package Body Material
- Supply Current-Max
- Supply Current-Max:
0.09 mA
Image | Part Number | Manufacturer | Datasheet | Availability | Pricing(USD) | Quantity | RoHS | Factory Lead Time | Lifecycle Status | Mounting Type | Surface Mount | Number of Terminals | Core Material | Access Time-Max | Clock Frequency-Max (fCLK) | Ihs Manufacturer | Manufacturer | Manufacturer Part Number | Moisture Sensitivity Levels | MSL | Number of Words | Number of Words Code | Operating Temperature-Max | Operating Temperature-Min | Package Body Material | Package Code | Package Description | Package Equivalence Code | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Reflow Temperature-Max (s) | Risk Rank | RoHS | Rohs Code | Shield | Supply Voltage-Nom (Vsup) | Operating Temperature | Series | Tolerance | JESD-609 Code | Pbfree Code | ECCN Code | Type | Terminal Finish | Additional Feature | HTS Code | Subcategory | Technology | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Terminal Pitch | Reach Compliance Code | Time@Peak Reflow Temperature-Max (s) | Pin Count | JESD-30 Code | Qualification Status | Supply Voltage-Max (Vsup) | Power Supplies | Temperature Grade | Supply Voltage-Min (Vsup) | Note | Inductance | Test Frequency | Number of Ports | Operating Mode | Supply Current-Max | Organization | Output Characteristics | Seated Height-Max | Memory Width | Size | Standby Current-Max | Memory Density | Screening Level | Parallel/Serial | I/O Type | Memory IC Type | Self Resonant Frequency | Programming Voltage | Standby Voltage-Min | Alternate Memory Width | Data Polling | Toggle Bit | Command User Interface | Output Enable | Number of Sectors/Size | Sector Size | Boot Block | Refresh Cycles | Sequential Burst Length | Interleaved Burst Length | Access Mode | Features | Reverse Pinout | Self Refresh | Length | Width |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | Mfr Part No AT49F4096A-90TI | Atmel | Datasheet | 8 | - | Min: 1 Mult: 1 | YES | 48 | 90 ns | ATMEL CORP | Atmel Corporation | AT49F4096A-90TI | 3 | 262144 words | 256000 | 85 °C | -40 °C | PLASTIC/EPOXY | TSOP1 | 12 X 20 MM, PLASTIC, MO-142DD, TSOP1-48 | TSSOP48,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | TSOP1 | 30 | 5.85 | No | 5 V | e0 | EAR99 | NOR TYPE | Tin/Lead (Sn/Pb) | BYTE PROGRAMMABLE; HARDWARE DATA PROTECTION; BOTTOM BOOT BLOCK; CONFIGURABLE AS 256K X 16 | 8542.32.00.51 | Flash Memories | CMOS | DUAL | GULL WING | 240 | 1 | 0.5 mm | compliant | 48 | R-PDSO-G48 | Not Qualified | 5.5 V | 5 V | INDUSTRIAL | 4.5 V | ASYNCHRONOUS | 0.09 mA | 256KX16 | 1.2 mm | 16 | 0.0001 A | 4194304 bit | PARALLEL | FLASH | 5 V | 8 | YES | YES | YES | 1,2,1 | 16K,8K,480K | BOTTOM | 18.4 mm | 12 mm | ||||||||||||||||||||||||||||||||
| Mfr Part No MT48H32M16LFBF-75:B | Micron | Datasheet | 20 | - | Min: 1 Mult: 1 | YES | 54 | 5.4 ns | 133 MHz | MICRON TECHNOLOGY INC | Micron Technology Inc | MT48H32M16LFBF-75:B | 33554432 words | 32000000 | 70 °C | PLASTIC/EPOXY | VFBGA | VFBGA, BGA54,9X9,32 | BGA54,9X9,32 | RECTANGULAR | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | Obsolete | BGA | 30 | 7.82 | Yes | 1.8 V | e1 | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | AUTO/SELF REFRESH | 8542.32.00.28 | DRAMs | CMOS | BOTTOM | BALL | 260 | 1 | 0.8 mm | unknown | 54 | R-PBGA-B54 | Not Qualified | 1.95 V | 1.8 V | COMMERCIAL | 1.7 V | 1 | SYNCHRONOUS | 0.09 mA | 32MX16 | 3-STATE | 1 mm | 16 | 0.00001 A | 536870912 bit | COMMON | SYNCHRONOUS DRAM | 8192 | 1,2,4,8,FP | 1,2,4,8 | FOUR BANK PAGE BURST | YES | 9 mm | 8 mm | |||||||||||||||||||||||||||||||||||
| Mfr Part No AT49F040T-90JC | Atmel | Datasheet | - | - | Min: 1 Mult: 1 | YES | 32 | 90 ns | ATMEL CORP | Miscellaneous | AT49F040T-90JC | 2 | 524288 words | 512000 | 70 °C | PLASTIC/EPOXY | QCCJ | PLASTIC, MS-016AE, LCC-32 | LDCC32,.5X.6 | RECTANGULAR | CHIP CARRIER | Obsolete | QFJ | NOT SPECIFIED | 8.75 | No | 5 V | e0 | EAR99 | NOR TYPE | Tin/Lead (Sn/Pb) | 8542.32.00.51 | Flash Memories | CMOS | QUAD | J BEND | 225 | 1 | 1.27 mm | unknown | 32 | R-PQCC-J32 | Not Qualified | 5.5 V | 5 V | COMMERCIAL | 4.5 V | ASYNCHRONOUS | 0.09 mA | 512KX8 | 3.55 mm | 8 | 0.0001 A | 4194304 bit | PARALLEL | FLASH | 5 V | YES | YES | YES | 1,1 | 16K,496K | TOP | 13.97 mm | 11.43 mm | |||||||||||||||||||||||||||||||||||
| Mfr Part No IS45S16400J-5TLA1 | ISSI | Datasheet | - | - | Min: 1 Mult: 1 | 12 Weeks | Production (Last Updated: 2 years ago) | SMD | YES | 54 | Ferrite | 4.8 ns | 200 MHz | INTEGRATED SILICON SOLUTION INC | Integrated Silicon Solution Inc | IS45S16400J-5TLA1 | n/a | 4194304 words | 4000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TSOP2 | TSOP2, TSOP54,.46,32 | TSOP54,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Active | 5.65 | Yes | Yes | Unshielded | 3.3 V | -40...+85°C | 1206F | ±5 % | AUTO/SELF REFRESH | CMOS | DUAL | GULL WING | 1 | 0.8 mm | compliant | R-PDSO-G54 | Not Qualified | 3.6 V | INDUSTRIAL | 3 V | n/a | 18 uH | 2,5 MHz | 1 | SYNCHRONOUS | 0.09 mA | 4MX16 | 3-STATE | 1.2 mm | 16 | 1206 | 67108864 bit | COMMON | SYNCHRONOUS DRAM | 75 MHz | 4096 | 1,2,4,8,FP | 1,2,4,8 | FOUR BANK PAGE BURST | - | NO | YES | 22.22 mm | 10.16 mm | ||||||||||||||||||||||||||||
 | Mfr Part No STK10C68-S25 | Cypress Semiconductor | Datasheet | - | - | Min: 1 Mult: 1 | YES | 28 | 25 ns | SIMTEK CORP | 8192 words | 8000 | 70 °C | PLASTIC/EPOXY | SOP | SOP, SOP28,.5 | SOP28,.5 | RECTANGULAR | SMALL OUTLINE | Obsolete | SOIC | No | 5 V | e0 | EAR99 | TIN LEAD | HARDWARE STORE/RECALL; AUTOMATIC STORE TIMING | 8542.32.00.41 | DUAL | GULL WING | 240 | 1 | 1.27 mm | unknown | 28 | R-PDSO-G28 | Not Qualified | 5.5 V | COMMERCIAL | 4.5 V | 1 | ASYNCHRONOUS | 0.09 mA | 8KX8 | 3-STATE | 2.54 mm | 8 | 0.00075 A | 65536 bit | PARALLEL | NON-VOLATILE SRAM | YES | 18.085 mm | 8.765 mm | |||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr Part No IS42VS32200E-10TLI | Integrated Silicon Solution Inc | Datasheet | - | - | Min: 1 Mult: 1 | YES | 86 | 8 ns | 100 MHz | INTEGRATED SILICON SOLUTION INC | 2097152 words | 2000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TSSOP | TSSOP, TSSOP86,.46,20 | TSSOP86,.46,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | Obsolete | TSOP2 | Yes | 1.8 V | e3 | Yes | EAR99 | MATTE TIN | AUTO/SELF REFRESH | 8542.32.00.02 | DUAL | GULL WING | 260 | 1 | 0.5 mm | compliant | 10 | 86 | R-PDSO-G86 | Not Qualified | 1.9 V | INDUSTRIAL | 1.7 V | 1 | SYNCHRONOUS | 0.09 mA | 2MX32 | 3-STATE | 1.2 mm | 32 | 0.001 A | 67108864 bit | COMMON | SYNCHRONOUS DRAM | 4096 | 1,2,4,8,FP | 1,2,4,8 | FOUR BANK PAGE BURST | YES | 22.22 mm | 10.16 mm | |||||||||||||||||||||||||||||||||||||||
 | Mfr Part No AS5C512K8F-20L | Micross Components | Datasheet | - | - | Min: 1 Mult: 1 | YES | 36 | 20 ns | MICROSS COMPONENTS | 524288 words | 512000 | 125 °C | -55 °C | CERAMIC, METAL-SEALED COFIRED | DFP | DFP, | RECTANGULAR | FLATPACK | Active | DFP | No | 5 V | e0 | No | 3A001.A.2.C | TIN LEAD | 8542.32.00.41 | DUAL | FLAT | 1 | 1.27 mm | compliant | 36 | R-CDFP-F36 | Not Qualified | 5.5 V | MILITARY | 4.5 V | ASYNCHRONOUS | 0.09 mA | 512KX8 | 3.175 mm | 8 | 4194304 bit | MIL-STD-883 | PARALLEL | STANDARD SRAM | 23.368 mm | 12.954 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No N341256LSJ-15 | Nkk Micro Devices Inc | Datasheet | - | - | Min: 1 Mult: 1 | YES | 28 | 15 ns | NKK MICRO DEVICES INC | 32768 words | 32000 | 70 °C | PLASTIC/EPOXY | SOJ | SOJ, SOJ28,.34 | SOJ28,.34 | RECTANGULAR | SMALL OUTLINE | Obsolete | No | 3.3 V | e0 | EAR99 | Tin/Lead (Sn/Pb) | 8542.32.00.41 | DUAL | J BEND | 1.27 mm | unknown | R-PDSO-J28 | Not Qualified | COMMERCIAL | ASYNCHRONOUS | 0.09 mA | 32KX8 | 3-STATE | 8 | 0.001 A | 262144 bit | PARALLEL | COMMON | STANDARD SRAM | 3 V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No T14M256A-15J | TM Technology Inc | Datasheet | - | - | Min: 1 Mult: 1 | YES | 28 | 15 ns | TM TECHNOLOGY INC | 32768 words | 32000 | 70 °C | PLASTIC/EPOXY | SOJ | SOJ, SOJ28,.34 | SOJ28,.34 | RECTANGULAR | SMALL OUTLINE | Contact Manufacturer | 5 V | EAR99 | 8542.32.00.41 | DUAL | J BEND | 1.27 mm | unknown | R-PDSO-J28 | Not Qualified | COMMERCIAL | ASYNCHRONOUS | 0.09 mA | 32KX8 | 3-STATE | 8 | 0.002 A | 262144 bit | PARALLEL | COMMON | STANDARD SRAM | 4.5 V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr Part No CY7C172-25DC | Cypress Semiconductor | Datasheet | - | - | Min: 1 Mult: 1 | NO | 24 | 25 ns | CYPRESS SEMICONDUCTOR CORP | 4096 words | 4000 | 70 °C | CERAMIC, GLASS-SEALED | DIP | 0.300 INCH, CERDIP-24 | DIP24,.3 | RECTANGULAR | IN-LINE | Obsolete | DIP | No | 5 V | e0 | EAR99 | Tin/Lead (Sn/Pb) | AUTOMATIC POWER-DOWN | 8542.32.00.41 | DUAL | THROUGH-HOLE | 1 | 2.54 mm | not_compliant | 24 | R-GDIP-T24 | Not Qualified | 5.5 V | COMMERCIAL | 4.5 V | 1 | ASYNCHRONOUS | 0.09 mA | 4KX4 | 3-STATE | 5.08 mm | 4 | 0.015 A | 16384 bit | PARALLEL | SEPARATE | STANDARD SRAM | 4.5 V | NO | 31.877 mm | 7.62 mm | ||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No MT5C2565C-45 | Micron Technology Inc | Datasheet | - | - | Min: 1 Mult: 1 | NO | 28 | 45 ns | MICRON TECHNOLOGY INC | 65536 words | 64000 | 70 °C | CERAMIC | DIP | DIP28,.3 | RECTANGULAR | IN-LINE | Obsolete | No | 5 V | e0 | EAR99 | Tin/Lead (Sn/Pb) | 8542.32.00.41 | DUAL | THROUGH-HOLE | 2.54 mm | not_compliant | R-XDIP-T28 | Not Qualified | COMMERCIAL | ASYNCHRONOUS | 0.09 mA | 64KX4 | 3-STATE | 4 | 0.007 A | 262144 bit | PARALLEL | COMMON | STANDARD SRAM | 4.5 V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No MSM51V17800D-60TS-K | LAPIS Semiconductor Co Ltd | Datasheet | - | - | Min: 1 Mult: 1 | YES | 28 | 60 ns | LAPIS SEMICONDUCTOR CO LTD | 2097152 words | 2000000 | 70 °C | PLASTIC/EPOXY | TSOP2 | TSOP2, TSOP28,.46 | TSOP28,.46 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | TSOP | No | 3.3 V | e0 | EAR99 | Tin/Lead (Sn/Pb) | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | 8542.32.00.02 | DUAL | GULL WING | 1 | 1.27 mm | unknown | 28 | R-PDSO-G28 | Not Qualified | 3.6 V | COMMERCIAL | 3 V | 1 | ASYNCHRONOUS | 0.09 mA | 2MX8 | 3-STATE | 1.2 mm | 8 | 0.0005 A | 16777216 bit | COMMON | FAST PAGE DRAM | 2048 | FAST PAGE | NO | 18.41 mm | 10.16 mm | ||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No HM3-65767N-5 | Temic Semiconductors | Datasheet | - | - | Min: 1 Mult: 1 | NO | 20 | 40 ns | TEMIC SEMICONDUCTORS | 16384 words | 16000 | 70 °C | PLASTIC/EPOXY | DIP | DIP20,.3 | RECTANGULAR | IN-LINE | Obsolete | No | 5 V | e0 | EAR99 | Tin/Lead (Sn/Pb) | 8542.32.00.41 | DUAL | THROUGH-HOLE | 2.54 mm | unknown | R-PDIP-T20 | Not Qualified | COMMERCIAL | ASYNCHRONOUS | 0.09 mA | 16KX1 | 3-STATE | 1 | 0.03 A | 16384 bit | PARALLEL | SEPARATE | STANDARD SRAM | 4.5 V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No IS61WV204816ALL-10TL | Integrated Silicon Solution Inc | Datasheet | - | - | Min: 1 Mult: 1 | YES | 48 | 10 ns | INTEGRATED SILICON SOLUTION INC | 2097152 words | 2000000 | 70 °C | PLASTIC/EPOXY | TSSOP | TSOP1, | TSSOP48,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | Active | 1.8 V | 3A991.B.2.A | 8542.32.00.41 | DUAL | GULL WING | NOT SPECIFIED | 1 | 0.5 mm | unknown | NOT SPECIFIED | R-PDSO-G48 | 2.2 V | COMMERCIAL | 1.65 V | 1 | ASYNCHRONOUS | 0.09 mA | 2MX16 | 3-STATE | 1.2 mm | 16 | 0.05 A | 33554432 bit | PARALLEL | COMMON | STANDARD SRAM | 1.65 V | YES | 18.4 mm | 12 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr Part No K6R1016V1C-TC20 | Samsung Semiconductor | Datasheet | - | - | Min: 1 Mult: 1 | YES | 44 | 20 ns | SAMSUNG SEMICONDUCTOR INC | 65536 words | 64000 | 70 °C | PLASTIC/EPOXY | TSOP2 | 0.400 INCH, TSOP2-44 | TSOP44,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | TSOP2 | No | 3.3 V | e0 | 3A991.B.2.B | TIN LEAD | 8542.32.00.41 | DUAL | GULL WING | 1 | 0.8 mm | unknown | 44 | R-PDSO-G44 | Not Qualified | 3.6 V | COMMERCIAL | 3 V | ASYNCHRONOUS | 0.09 mA | 64KX16 | 3-STATE | 1.2 mm | 16 | 0.005 A | 1048576 bit | PARALLEL | COMMON | STANDARD SRAM | 3 V | 18.41 mm | 10.16 mm | |||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No MSM5117805D-60TS-K | LAPIS Semiconductor Co Ltd | Datasheet | - | - | Min: 1 Mult: 1 | YES | 28 | 60 ns | LAPIS SEMICONDUCTOR CO LTD | 2097152 words | 2000000 | 70 °C | PLASTIC/EPOXY | TSOP | TSOP, TSOP28,.46 | TSOP28,.46 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | No | 5 V | e0 | EAR99 | Tin/Lead (Sn/Pb) | 8542.32.00.02 | DUAL | GULL WING | 1.27 mm | unknown | R-PDSO-G28 | Not Qualified | COMMERCIAL | 0.09 mA | 2MX8 | 3-STATE | 8 | 0.001 A | 16777216 bit | COMMON | EDO DRAM | 2048 | NO | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No M5M4V16400CTP-6 | Mitsubishi Electric | Datasheet | - | - | Min: 1 Mult: 1 | YES | 24 | 60 ns | MITSUBISHI ELECTRIC CORP | 4194304 words | 4000000 | 70 °C | PLASTIC/EPOXY | TSOP2 | TSOP2, TSOP24/26,.36 | TSOP24/26,.36 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | TSOP2 | No | 3.3 V | e0 | No | EAR99 | TIN LEAD | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | 8542.32.00.02 | DUAL | GULL WING | 1 | 1.27 mm | unknown | 26 | R-PDSO-G24 | Not Qualified | 3.6 V | COMMERCIAL | 3 V | 1 | ASYNCHRONOUS | 0.09 mA | 4MX4 | 3-STATE | 1.2 mm | 4 | 0.0005 A | 16777216 bit | COMMON | FAST PAGE DRAM | 4096 | FAST PAGE | NO | 17.14 mm | 7.62 mm | |||||||||||||||||||||||||||||||||||||||||||||
 | Mfr Part No CY7C170-25PC | Cypress Semiconductor | Datasheet | - | - | Min: 1 Mult: 1 | NO | 22 | 25 ns | CYPRESS SEMICONDUCTOR CORP | 4096 words | 4000 | 70 °C | PLASTIC/EPOXY | DIP | 0.300 INCH, PLASTIC, DIP-22 | DIP22,.3 | RECTANGULAR | IN-LINE | Obsolete | DIP | No | 5 V | e0 | EAR99 | Tin/Lead (Sn/Pb) | 8542.32.00.41 | DUAL | THROUGH-HOLE | 1 | 2.54 mm | not_compliant | 22 | R-PDIP-T22 | Not Qualified | 5.5 V | COMMERCIAL | 4.5 V | 1 | ASYNCHRONOUS | 0.09 mA | 4KX4 | 3-STATE | 4.826 mm | 4 | 0.09 A | 16384 bit | PARALLEL | COMMON | STANDARD SRAM | 4.5 V | YES | 27.813 mm | 7.62 mm | |||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No KM416C254DT-6 | Samsung Semiconductor | Datasheet | - | - | Min: 1 Mult: 1 | YES | 40 | 60 ns | SAMSUNG SEMICONDUCTOR INC | 262144 words | 256000 | 70 °C | PLASTIC/EPOXY | TSOP2 | TSOP2, TSOP40/44,.46,32 | TSOP40/44,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | TSOP2 | No | 5 V | e0 | EAR99 | TIN LEAD | CAS BEFORE RAS/RAS ONLY/HIDDEN REFRESH | 8542.32.00.02 | DUAL | GULL WING | 1 | 0.8 mm | unknown | 44 | R-PDSO-G40 | Not Qualified | 5.5 V | COMMERCIAL | 4.5 V | 1 | ASYNCHRONOUS | 0.09 mA | 256KX16 | 3-STATE | 1.2 mm | 16 | 0.001 A | 4194304 bit | COMMON | EDO DRAM | 512 | FAST PAGE WITH EDO | NO | 18.41 mm | 10.16 mm | ||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No MT4LC4M4E8DJ-7 | Micron Technology Inc | Datasheet | - | - | Min: 1 Mult: 1 | YES | 24 | 70 ns | MICRON TECHNOLOGY INC | 4194304 words | 4000000 | 70 °C | PLASTIC/EPOXY | SOJ | 0.300 INCH, PLASTIC, SOJ-26/24 | SOJ24/26,.34 | RECTANGULAR | SMALL OUTLINE | Obsolete | SOJ | No | 3.3 V | e0 | No | EAR99 | TIN LEAD | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | 8542.32.00.02 | DUAL | J BEND | 1 | 1.27 mm | not_compliant | 24 | R-PDSO-J24 | Not Qualified | 3.6 V | COMMERCIAL | 3 V | 1 | ASYNCHRONOUS | 0.09 mA | 4MX4 | 3-STATE | 3.61 mm | 4 | 0.0005 A | 16777216 bit | COMMON | EDO DRAM | 2048 | FAST PAGE WITH EDO | NO | 17.17 mm | 7.67 mm |
-
AT49F4096A-90TI
Atmel
Package:Memory
Price: please inquire
-
MT48H32M16LFBF-75:B
Micron
Package:Memory
Price: please inquire
-
AT49F040T-90JC
Atmel
Package:Memory
Price: please inquire
-
IS45S16400J-5TLA1
ISSI
Package:Memory
Price: please inquire
-
STK10C68-S25
Cypress Semiconductor
Package:Memory
Price: please inquire
-
IS42VS32200E-10TLI
Integrated Silicon Solution Inc
Package:Memory
Price: please inquire
-
AS5C512K8F-20L
Micross Components
Package:Memory
Price: please inquire
-
N341256LSJ-15
Nkk Micro Devices Inc
Package:Memory
Price: please inquire
-
T14M256A-15J
TM Technology Inc
Package:Memory
Price: please inquire
-
CY7C172-25DC
Cypress Semiconductor
Package:Memory
Price: please inquire
-
MT5C2565C-45
Micron Technology Inc
Package:Memory
Price: please inquire
-
MSM51V17800D-60TS-K
LAPIS Semiconductor Co Ltd
Package:Memory
Price: please inquire
-
HM3-65767N-5
Temic Semiconductors
Package:Memory
Price: please inquire
-
IS61WV204816ALL-10TL
Integrated Silicon Solution Inc
Package:Memory
Price: please inquire
-
K6R1016V1C-TC20
Samsung Semiconductor
Package:Memory
Price: please inquire
-
MSM5117805D-60TS-K
LAPIS Semiconductor Co Ltd
Package:Memory
Price: please inquire
-
M5M4V16400CTP-6
Mitsubishi Electric
Package:Memory
Price: please inquire
-
CY7C170-25PC
Cypress Semiconductor
Package:Memory
Price: please inquire
-
KM416C254DT-6
Samsung Semiconductor
Package:Memory
Price: please inquire
-
MT4LC4M4E8DJ-7
Micron Technology Inc
Package:Memory
Price: please inquire