The category is 'Memory'
Memory (117)
- All Manufacturers
- Access Time-Max
- Ihs Manufacturer
- JESD-30 Code
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- Memory Width
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- Number of Words
- Number of Words Code
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- Package Body Material
- Supply Current-Max
- Supply Current-Max:
0.1 mA
Image | Part Number | Manufacturer | Datasheet | Availability | Pricing(USD) | Quantity | RoHS | Factory Lead Time | Mount | Mounting Type | Package / Case | Surface Mount | Mounting Feature | Number of Pins | Shell Material | Supplier Device Package | Number of Terminals | Access Time-Max | Address Bus | Clock Freq | Clock Frequency-Max (fCLK) | Contact Finish Mating | Contact Materials | Current - Average Rectified (Io) (per Diode) | Ihs Manufacturer | Manufacturer | Manufacturer Part Number | Maximum Operating Supply Voltage | Mfr | Minimum Operating Supply Voltage | Moisture Sensitivity Levels | Mounting | Number of I/O Lines | Number of Words | Number of Words Code | Operating Supply Voltage (Max) | Operating Supply Voltage (Min) | Operating Supply Voltage (Typ) | Operating Temp Range | Operating Temperature Classification | Operating Temperature-Max | Operating Temperature-Min | Package | Package Body Material | Package Code | Package Description | Package Equivalence Code | Package Shape | Package Style | Package Type | Part Life Cycle Code | Part Package Code | Primary Material | Product Status | Rad Hardened | Reflow Temperature-Max (s) | Risk Rank | RoHS | Rohs Code | Supplier Package | Supply Voltage-Nom (Vsup) | Timing Type | Typical Operating Supply Voltage | Usage Level | Operating Temperature | Packaging | Series | JESD-609 Code | Pbfree Code | Part Status | Termination | ECCN Code | Connector Type | Terminal Finish | Max Operating Temperature | Min Operating Temperature | Color | Additional Feature | HTS Code | Fastening Type | Subcategory | Technology | Terminal Position | Orientation | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Terminal Pitch | Reach Compliance Code | Frequency | Shell Finish | Pin Count | JESD-30 Code | Qualification Status | Operating Supply Voltage | Supply Voltage-Max (Vsup) | Power Supplies | Temperature Grade | Supply Voltage-Min (Vsup) | Number of Ports | Speed | Diode Type | Current - Reverse Leakage @ Vr | Operating Mode | Voltage - Forward (Vf) (Max) @ If | Supply Current-Max | Access Time | Architecture | Operating Temperature - Junction | Organization | Output Characteristics | Seated Height-Max | Memory Width | Voltage - DC Reverse (Vr) (Max) | Address Bus Width | Density | Standby Current-Max | Memory Density | Screening Level | Access Time (Max) | Parallel/Serial | I/O Type | Sync/Async | Diode Configuration | Word Size | Memory IC Type | Programming Voltage | Standby Voltage-Min | Output Enable | Refresh Cycles | Sequential Burst Length | Interleaved Burst Length | Access Mode | Self Refresh | Supply Current | Length | Width | Radiation Hardening | Lead Free |
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 | Mfr Part No MT46H32M16LFCK-75LIT | Micron | Datasheet | 1872 | - | Min: 1 Mult: 1 | YES | 60 | 6 ns | 133 MHz | MICRON TECHNOLOGY INC | Micron Technology Inc | MT46H32M16LFCK-75LIT | 33554432 words | 32000000 | 85 °C | -40 °C | PLASTIC/EPOXY | VFBGA | 10 X 11.5 MM, LEAD FREE, PLASTIC, VFBGA-60 | BGA60,9X10,32 | RECTANGULAR | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | Active | BGA | 30 | 5.12 | Yes | 1.8 V | e1 | Yes | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | AUTO/SELF REFRESH | 8542.32.00.28 | DRAMs | CMOS | BOTTOM | BALL | 260 | 1 | 0.8 mm | compliant | 60 | R-PBGA-B60 | Not Qualified | 1.95 V | 1.8 V | INDUSTRIAL | 1.7 V | 1 | SYNCHRONOUS | 0.1 mA | 32MX16 | 3-STATE | 1 mm | 16 | 0.00001 A | 536870912 bit | COMMON | DDR DRAM | 8192 | 2,4,8 | 2,4,8 | FOUR BANK PAGE BURST | YES | 11.5 mm | 10 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No K4S510832B-UC75 | Samsung | Datasheet | - | - | Min: 1 Mult: 1 | YES | 54 | 54 | 5.4 ns | 133 MHz | SAMSUNG SEMICONDUCTOR INC | Samsung Semiconductor | K4S510832B-UC75 | 3 | 67108864 words | 64000000 | 70 °C | PLASTIC/EPOXY | TSOP | TSOP, TSOP54,.46,32 | TSOP54,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | NOT SPECIFIED | 5.84 | Compliant | Yes | 3.3 V | e6 | Yes | Tin/Bismuth (Sn/Bi) | DRAMs | CMOS | DUAL | GULL WING | 260 | 0.8 mm | compliant | R-PDSO-G54 | Not Qualified | 3.3 V | COMMERCIAL | 0.1 mA | 7.5 ns | 64MX8 | 3-STATE | 8 | 0.002 A | 536870912 bit | COMMON | SYNCHRONOUS DRAM | 8192 | 1,2,4,8 | 1,2,4,8 | Lead Free | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No NTE2114 | NTE Electronics, Inc. | Datasheet | 624 | - | Min: 1 Mult: 1 | NO | 18 | 300 ns | 10(b) | Not Required(MHz) | NTE ELECTRONICS INC | NTE Electronics | NTE2114 | Through Hole | 4 | 1K | 1000 | 5.5(V) | 4.5(V) | 5(V) | 0C to 70C | Commercial | 70 °C | PLASTIC/EPOXY | DIP | DIP, DIP18,.3 | DIP18,.3 | RECTANGULAR | IN-LINE | PDIP | Active | DIP | No | NOT SPECIFIED | 2.34 | Yes | 5 V | e0 | EAR99 | Tin/Lead (Sn/Pb) | 8542.32.00.41 | SRAMs | NMOS | DUAL | THROUGH-HOLE | NOT SPECIFIED | 1 | 2.54 mm | unknown | 18 | R-PDIP-T18 | Not Qualified | 5.25 V | 5 V | COMMERCIAL | 4.75 V | 1 | ASYNCHRONOUS | 0.1 mA | 300 | Not Required | 1KX4 | 3-STATE | 4 | 4096(Bit) | 0.1 A | 4096 bit | PARALLEL | COMMON | Asynchronous | 4(b) | STANDARD SRAM | 5 V | 100 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No K4S560432H-UC75 | Samsung | Datasheet | 3072 | - | Min: 1 Mult: 1 | YES | 54 | 5.4 ns | 133 MHz | SAMSUNG SEMICONDUCTOR INC | Samsung Semiconductor | K4S560432H-UC75 | 3 | 67108864 words | 64000000 | 70 °C | PLASTIC/EPOXY | TSOP2 | TSOP2, TSOP54,.46,32 | TSOP54,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | NOT SPECIFIED | 5.81 | Non-Compliant | Yes | 3.3 V | e6 | Yes | Tin/Bismuth (Sn97Bi3) | AUTO/SELF REFRESH | DRAMs | CMOS | DUAL | GULL WING | 260 | 1 | 0.8 mm | unknown | 133 MHz | R-PDSO-G54 | Not Qualified | 3.6 V | 3.3 V | COMMERCIAL | 3 V | 1 | SYNCHRONOUS | 0.1 mA | 7.5 ns | 64MX4 | 3-STATE | 1.2 mm | 4 | 0.002 A | 268435456 bit | COMMON | SYNCHRONOUS DRAM | 8192 | 1,2,4,8,FP | 1,2,4,8 | FOUR BANK PAGE BURST | YES | 22.22 mm | 10.16 mm | Lead Free | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No GS74116AGP-12I | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 6 Weeks | YES | 44 | 44 | 12 ns | GSI TECHNOLOGY | GSI Technology | GS74116AGP-12I | 3.6 V | 3 V | 3 | Surface Mount | 16 Bit | 256 kWords | 256000 | 85 °C | -40 °C | PLASTIC/EPOXY | TSOP2 | TSOP2, TSOP44,.46,32 | TSOP44,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Active | TSOP2 | NOT SPECIFIED | 1.73 | Compliant | Yes | TSOP-II | 3.3 V | Asynchronous | 3.3000 V | Industrial grade | -40 to 85 °C | e3 | Yes | 3A991.B.2.B | PURE MATTE TIN | 85 °C | -40 °C | 8542.32.00.41 | SRAMs | CMOS | DUAL | GULL WING | 260 | 1 | 0.8 mm | compliant | 44 | R-PDSO-G44 | Not Qualified | 3.3 V | 3.6 V | 3.3 V | INDUSTRIAL | 3 V | 1 | ASYNCHRONOUS | 0.1 mA | 256KX16 | 3-STATE | 1.2 mm | 16 | 18 Bit | 4 Mbit | 0.02 A | 4194304 bit | Industrial | PARALLEL | COMMON | STANDARD SRAM | 3 V | 18.41 mm | 10.16 mm | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No 6116SA45TP | Renesas | Datasheet | - | - | Min: 1 Mult: 1 | NO | 24 | 45 ns | INTEGRATED DEVICE TECHNOLOGY INC | Integrated Device Technology Inc | 6116SA45TP | 2048 words | 2000 | 70 °C | PLASTIC/EPOXY | DIP | 0.300 INCH, PLASTIC, DIP-24 | DIP24,.3 | RECTANGULAR | IN-LINE | Obsolete | DIP | 30 | 7.81 | No | 5 V | e0 | EAR99 | Tin/Lead (Sn85Pb15) | 8542.32.00.41 | SRAMs | CMOS | DUAL | THROUGH-HOLE | 225 | 1 | 2.54 mm | not_compliant | 24 | R-PDIP-T24 | Not Qualified | 5.5 V | 5 V | COMMERCIAL | 4.5 V | ASYNCHRONOUS | 0.1 mA | 2KX8 | 3-STATE | 4.191 mm | 8 | 0.002 A | 16384 bit | PARALLEL | COMMON | STANDARD SRAM | 4.5 V | 31.75 mm | 7.62 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No IDT7164S20YG | Renesas | Datasheet | - | - | Min: 1 Mult: 1 | YES | 28 | 19 ns | INTEGRATED DEVICE TECHNOLOGY INC | Integrated Device Technology Inc | IDT7164S20YG | 3 | 8192 words | 8000 | 70 °C | PLASTIC/EPOXY | SOJ | SOJ, SOJ28,.34 | SOJ28,.34 | RECTANGULAR | SMALL OUTLINE | Active | SOJ | 30 | 5.08 | Yes | 5 V | e3 | Yes | EAR99 | Matte Tin (Sn) - annealed | 8542.32.00.41 | SRAMs | CMOS | DUAL | J BEND | 260 | 1 | 1.27 mm | compliant | 28 | R-PDSO-J28 | Not Qualified | 5.5 V | 5 V | COMMERCIAL | 4.5 V | ASYNCHRONOUS | 0.1 mA | 8KX8 | 3-STATE | 3.556 mm | 8 | 0.015 A | 65536 bit | PARALLEL | COMMON | STANDARD SRAM | 4.5 V | 17.9324 mm | 7.5184 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No HM6208HLP-35 | HITACHI | Datasheet | - | - | Min: 1 Mult: 1 | NO | 24 | 35 ns | HITACHI LTD | Hitachi Ltd | HM6208HLP-35 | 65536 words | 64000 | 70 °C | PLASTIC/EPOXY | DIP | DIP, DIP24,.3 | DIP24,.3 | RECTANGULAR | IN-LINE | Obsolete | DIP | NOT SPECIFIED | 5.8 | No | 5 V | e0 | EAR99 | Tin/Lead (Sn/Pb) | 8542.32.00.41 | SRAMs | CMOS | DUAL | THROUGH-HOLE | NOT SPECIFIED | 1 | 2.54 mm | unknown | 24 | R-PDIP-T24 | Not Qualified | 5.5 V | 5 V | COMMERCIAL | 4.5 V | 1 | ASYNCHRONOUS | 0.1 mA | 64KX4 | 3-STATE | 5.08 mm | 4 | 262144 bit | PARALLEL | COMMON | STANDARD SRAM | 2 V | NO | 29.88 mm | 7.62 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No AM27256-1DC | AMD | Datasheet | - | - | Min: 1 Mult: 1 | Surface Mount | PRM2-SL | NO | PRM2-SL | 28 | 170 ns | 40A | ADVANCED MICRO DEVICES INC | AMD | AM27256-1DC | 32768 words | 32000 | 70 °C | CERAMIC, GLASS-SEALED | WDIP | WDIP, DIP28,.6 | DIP28,.6 | RECTANGULAR | IN-LINE, WINDOW | Obsolete | DIP | NOT SPECIFIED | 8.21 | Non-Compliant | No | 5 V | Bulk | -- | e0 | No | Active | EAR99 | Tin/Lead (Sn/Pb) | 8542.32.00.61 | EPROMs | NMOS | DUAL | THROUGH-HOLE | NOT SPECIFIED | 1 | 2.54 mm | unknown | 28 | R-GDIP-T28 | Not Qualified | 5.25 V | 5 V | COMMERCIAL | 4.75 V | Fast Recovery = 200mA (Io) | Schottky | 5mA @ 60V | ASYNCHRONOUS | 620mV @ 40A | 0.1 mA | -55°C ~ 125°C | 32KX8 | 3-STATE | 5.588 mm | 8 | 60V | 262144 bit | PARALLEL | COMMON | 1 Pair Common Cathode | UVPROM | 12.5 V | 37.1475 mm | 15.24 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No CY6116A45DMB | Cypress | Datasheet | - | - | Min: 1 Mult: 1 | Panel Mount, Through Hole | NO | Flange | Aluminum | 24 | 45 ns | 11(b) | Not Required(MHz) | Gold | Copper Alloy | CYPRESS SEMICONDUCTOR CORP | Cypress Semiconductor | CY6116A-45DMB | Glenair | Through Hole | 8 | 2K | 2000 | 5.5(V) | 4.5(V) | 5(V) | -55C to 125C | Military | 125 °C | -55 °C | Retail Package | PLASTIC/EPOXY | DIP | DIP, DIP24,.6 | DIP24,.6 | RECTANGULAR | IN-LINE | CDIP | Obsolete | DIP | Metal | Active | No | 5.29 | No | 5 V | Military grade | -65°C ~ 175°C | 806 | e0 | Solder | 3A001.A.2.C | Plug, Male Pins | Tin/Lead (Sn/Pb) | Olive Drab | AUTOMATIC POWER-DOWN | 8542.32.00.41 | Threaded | SRAMs | CMOS | DUAL | A | THROUGH-HOLE | 1 | 2.54 mm | not_compliant | Olive Drab Cadmium | 24 | R-PDIP-T24 | Not Qualified | 5.5 V | 5 V | MILITARY | 4.5 V | 1 | ASYNCHRONOUS | 0.1 mA | 45 | Not Required | 2KX8 | 3-STATE | 5.715 mm | 8 | 16384(Bit) | 0.02 A | 16384 bit | 38535Q/M;38534H;883B | 45ns | PARALLEL | COMMON | Asynchronous | 8(b) | STANDARD SRAM | 4.5 V | YES | 100 | 31.877 mm | 15.24 mm | ||||||||||||||||||||||||||||||||||||||||
| Mfr Part No K4E640412C-TL60 | Samsung | Datasheet | - | - | Min: 1 Mult: 1 | Surface Mount | YES | 32 | 32 | 60 ns | SAMSUNG SEMICONDUCTOR INC | Samsung Semiconductor | K4E640412C-TL60 | 16777216 words | 16000000 | 70 °C | PLASTIC/EPOXY | TSOP2 | TSOP2, TSOP32,.46 | TSOP32,.46 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | TSOP2 | NOT SPECIFIED | 5.92 | Non-Compliant | No | 3.3 V | e0 | EAR99 | Tin/Lead (Sn/Pb) | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH | 8542.32.00.02 | DRAMs | CMOS | DUAL | GULL WING | NOT SPECIFIED | 1 | 1.27 mm | unknown | 32 | R-PDSO-G32 | Not Qualified | 3.6 V | 3.3 V | COMMERCIAL | 3 V | 1 | ASYNCHRONOUS | 0.1 mA | 16MX4 | 3-STATE | 1.2 mm | 4 | 0.0002 A | 67108864 bit | COMMON | EDO DRAM | 4096 | FAST PAGE WITH EDO | YES | 20.95 mm | 10.16 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No MB81V17405B-60PFTN | FUJITSU Limited | Datasheet | - | - | Min: 1 Mult: 1 | YES | 24 | 60 ns | FUJITSU LTD | 4194304 words | 4000000 | 70 °C | PLASTIC/EPOXY | TSOP2 | TSOP2, TSOP24/26,.36 | TSOP24/26,.36 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | No | 3.3 V | e0 | EAR99 | TIN LEAD | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | 8542.32.00.02 | DUAL | GULL WING | 1 | 1.27 mm | unknown | R-PDSO-G24 | Not Qualified | 3.6 V | COMMERCIAL | 3 V | 1 | ASYNCHRONOUS | 0.1 mA | 4MX4 | 3-STATE | 1.2 mm | 4 | 0.0005 A | 16777216 bit | COMMON | EDO DRAM | 2048 | FAST PAGE WITH EDO | NO | 17.14 mm | 7.62 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No GM71C4100CJ-70 | SK Hynix Inc | Datasheet | - | - | Min: 1 Mult: 1 | YES | 20 | 70 ns | SK HYNIX INC | 4194304 words | 4000000 | 70 °C | PLASTIC/EPOXY | SOJ | SOJ-26 | SOJ20/26,.34 | RECTANGULAR | SMALL OUTLINE | Obsolete | No | 5 V | e0 | EAR99 | Tin/Lead (Sn/Pb) | 8542.32.00.02 | DUAL | J BEND | 1.27 mm | compliant | R-PDSO-J20 | Not Qualified | COMMERCIAL | 0.1 mA | 4MX1 | 3-STATE | 1 | 0.001 A | 4194304 bit | SEPARATE | FAST PAGE DRAM | 1024 | NO | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No IS45VM16320D-75BLA2-TR | Integrated Silicon Solution Inc | Datasheet | - | - | Min: 1 Mult: 1 | YES | 54 | 6 ns | 133 MHz | INTEGRATED SILICON SOLUTION INC | 1 | 33554432 words | 32000000 | 105 °C | -40 °C | PLASTIC/EPOXY | TFBGA | TFBGA, BGA54,9X9,32 | BGA54,9X9,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Not Recommended | Yes | 1.8 V | e3 | Yes | EAR99 | MATTE TIN | AUTO/SELF REFRESH | 8542.32.00.28 | BOTTOM | BALL | 1 | 0.8 mm | compliant | R-PBGA-B54 | Not Qualified | 1.95 V | INDUSTRIAL | 1.7 V | 1 | SYNCHRONOUS | 0.1 mA | 32MX16 | 3-STATE | 1.2 mm | 16 | 0.002 A | 536870912 bit | AEC-Q100 | COMMON | CACHE DRAM MODULE | 8192 | 1,2,4,8,FP | 1,2,4,8 | FOUR BANK PAGE BURST | YES | 13 mm | 8 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No TC5165805BFT-50 | Toshiba America Electronic Components | Datasheet | - | - | Min: 1 Mult: 1 | YES | 32 | 50 ns | TOSHIBA CORP | 8388608 words | 8000000 | 70 °C | PLASTIC/EPOXY | TSOP2 | TSOP2, TSOP32,.46 | TSOP32,.46 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | TSOP2 | No | 3.3 V | e0 | EAR99 | Tin/Lead (Sn/Pb) | 8542.32.00.02 | DUAL | GULL WING | 1 | 1.27 mm | unknown | 32 | R-PDSO-G32 | Not Qualified | 3.6 V | COMMERCIAL | 3 V | 1 | ASYNCHRONOUS | 0.1 mA | 8MX8 | 3-STATE | 1.2 mm | 8 | 0.0005 A | 67108864 bit | COMMON | EDO DRAM | 4096 | FAST PAGE WITH EDO | NO | 20.95 mm | 10.16 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No MT5C2561EC-55 | Micron Technology Inc | Datasheet | - | - | Min: 1 Mult: 1 | YES | 28 | 55 ns | MICRON TECHNOLOGY INC | 262144 words | 256000 | 70 °C | CERAMIC | QCCN | LCC28,.35X.55 | RECTANGULAR | CHIP CARRIER | Obsolete | No | 5 V | e0 | EAR99 | Tin/Lead (Sn/Pb) | 8542.32.00.41 | QUAD | NO LEAD | 1.27 mm | not_compliant | R-XQCC-N28 | Not Qualified | COMMERCIAL | ASYNCHRONOUS | 0.1 mA | 256KX1 | 3-STATE | 1 | 0.01 A | 262144 bit | PARALLEL | SEPARATE | STANDARD SRAM | 4.5 V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No GVT73128A8J-15 | Cypress Semiconductor | Datasheet | - | - | Min: 1 Mult: 1 | YES | 32 | 15 ns | CYPRESS SEMICONDUCTOR CORP | 131072 words | 128000 | 70 °C | PLASTIC/EPOXY | SOJ | SOJ32,.44 | RECTANGULAR | SMALL OUTLINE | Obsolete | No | 3.3 V | e0 | 3A991.B.2.B | Tin/Lead (Sn/Pb) | 8542.32.00.41 | DUAL | J BEND | 1.27 mm | unknown | R-PDSO-J32 | Not Qualified | COMMERCIAL | ASYNCHRONOUS | 0.1 mA | 128KX8 | 3-STATE | 8 | 0.01 A | 1048576 bit | PARALLEL | COMMON | STANDARD SRAM | 3 V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No AP9A128-12VC | Integrated Silicon Solution Inc | Datasheet | - | - | Min: 1 Mult: 1 | YES | 28 | 12 ns | INTEGRATED SILICON SOLUTION INC | 32768 words | 32000 | 70 °C | PLASTIC/EPOXY | SOJ | 0.300 INCH, SOJ-28 | SOJ28,.4 | RECTANGULAR | SMALL OUTLINE | Obsolete | No | 5 V | e0 | EAR99 | Tin/Lead (Sn/Pb) | 8542.32.00.41 | DUAL | J BEND | 1 | 1.27 mm | compliant | R-PDSO-J28 | Not Qualified | 5.5 V | COMMERCIAL | 4.5 V | ASYNCHRONOUS | 0.1 mA | 32KX8 | 3-STATE | 3.556 mm | 8 | 0.01 A | 262144 bit | PARALLEL | COMMON | STANDARD SRAM | 4.5 V | 17.907 mm | 7.518 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No IDT6116SA55L32 | Integrated Device Technology Inc | Datasheet | - | - | Min: 1 Mult: 1 | YES | 32 | 55 ns | INTEGRATED DEVICE TECHNOLOGY INC | 2048 words | 2000 | 70 °C | CERAMIC | QCCN | LCC32,.45X.55 | RECTANGULAR | CHIP CARRIER | Obsolete | No | 5 V | e0 | EAR99 | Tin/Lead (Sn/Pb) | 8542.32.00.41 | QUAD | NO LEAD | 1.27 mm | unknown | R-XQCC-N32 | Not Qualified | COMMERCIAL | ASYNCHRONOUS | 0.1 mA | 2KX8 | 3-STATE | 8 | 0.002 A | 16384 bit | PARALLEL | COMMON | STANDARD SRAM | 4.5 V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No AM27128A-2DI | AMD | Datasheet | - | - | Min: 1 Mult: 1 | NO | 28 | 200 ns | ADVANCED MICRO DEVICES INC | 16384 words | 16000 | 85 °C | -40 °C | CERAMIC, GLASS-SEALED | WDIP | WDIP, DIP28,.6 | DIP28,.6 | RECTANGULAR | IN-LINE, WINDOW | Obsolete | DIP | No | 5 V | e0 | No | EAR99 | TIN LEAD | 8542.32.00.71 | DUAL | THROUGH-HOLE | 1 | 2.54 mm | unknown | 28 | R-GDIP-T28 | Not Qualified | 5.25 V | INDUSTRIAL | 4.75 V | ASYNCHRONOUS | 0.1 mA | 16KX8 | 3-STATE | 5.588 mm | 8 | 131072 bit | PARALLEL | COMMON | OTP ROM | 12.5 V | 37.1475 mm | 15.24 mm |
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MT46H32M16LFCK-75LIT
Micron
Package:Memory
Price: please inquire
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K4S510832B-UC75
Samsung
Package:Memory
Price: please inquire
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NTE2114
NTE Electronics, Inc.
Package:Memory
Price: please inquire
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K4S560432H-UC75
Samsung
Package:Memory
Price: please inquire
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GS74116AGP-12I
GSI Technology
Package:Memory
Price: please inquire
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6116SA45TP
Renesas
Package:Memory
Price: please inquire
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IDT7164S20YG
Renesas
Package:Memory
Price: please inquire
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HM6208HLP-35
HITACHI
Package:Memory
Price: please inquire
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AM27256-1DC
AMD
Package:Memory
Price: please inquire
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CY6116A45DMB
Cypress
Package:Memory
Price: please inquire
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K4E640412C-TL60
Samsung
Package:Memory
Price: please inquire
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MB81V17405B-60PFTN
FUJITSU Limited
Package:Memory
Price: please inquire
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GM71C4100CJ-70
SK Hynix Inc
Package:Memory
Price: please inquire
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IS45VM16320D-75BLA2-TR
Integrated Silicon Solution Inc
Package:Memory
Price: please inquire
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TC5165805BFT-50
Toshiba America Electronic Components
Package:Memory
Price: please inquire
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MT5C2561EC-55
Micron Technology Inc
Package:Memory
Price: please inquire
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GVT73128A8J-15
Cypress Semiconductor
Package:Memory
Price: please inquire
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AP9A128-12VC
Integrated Silicon Solution Inc
Package:Memory
Price: please inquire
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IDT6116SA55L32
Integrated Device Technology Inc
Package:Memory
Price: please inquire
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AM27128A-2DI
AMD
Package:Memory
Price: please inquire