The category is 'Memory'
Memory (20)
- All Manufacturers
- Access Time-Max
- Ihs Manufacturer
- JESD-30 Code
- Memory IC Type
- Memory Width
- Number of Terminals
- Number of Words
- Number of Words Code
- Operating Temperature-Max
- Organization
- Package Body Material
- Supply Current-Max
- Supply Current-Max:
0.105 mA
Image | Part Number | Manufacturer | Datasheet | Availability | Pricing(USD) | Quantity | RoHS | Factory Lead Time | Mounting Type | Package / Case | Surface Mount | Supplier Device Package | Number of Terminals | Access Time-Max | Base Product Number | Ihs Manufacturer | Manufacturer | Manufacturer Part Number | Memory Types | Mfr | Moisture Sensitivity Levels | Number of Words | Number of Words Code | Operating Temperature-Max | Operating Temperature-Min | Package | Package Body Material | Package Code | Package Description | Package Equivalence Code | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Product Status | Reflow Temperature-Max (s) | Risk Rank | RoHS | Rohs Code | Supply Voltage-Nom (Vsup) | Usage Level | Operating Temperature | Series | JESD-609 Code | Pbfree Code | ECCN Code | Terminal Finish | Additional Feature | HTS Code | Subcategory | Technology | Voltage - Supply | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Terminal Pitch | Reach Compliance Code | Time@Peak Reflow Temperature-Max (s) | Pin Count | JESD-30 Code | Qualification Status | Supply Voltage-Max (Vsup) | Power Supplies | Temperature Grade | Supply Voltage-Min (Vsup) | Memory Size | Number of Ports | Operating Mode | Supply Current-Max | Access Time | Memory Format | Memory Interface | Organization | Output Characteristics | Seated Height-Max | Memory Width | Write Cycle Time - Word, Page | Standby Current-Max | Memory Density | Screening Level | Parallel/Serial | I/O Type | Memory IC Type | Standby Voltage-Min | Output Enable | Refresh Cycles | Access Mode | Self Refresh | Memory Organization | Length | Width |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | Mfr Part No AM27S07A/B2A | Advanced Micro Devices | Datasheet | - | - | Min: 1 Mult: 1 | 1 Week | Surface Mount | 20-CLCC | YES | 20-CLCC | 20 | 30 ns | AM27S07A | ADVANCED MICRO DEVICES INC | AMD | AM27S07A/B2A | Volatile | Advanced Micro Devices | 16 words | 16 | 125 °C | -55 °C | Bulk | CERAMIC | QCCN | QCCN, LCC20,.35SQ | LCC20,.35SQ | SQUARE | CHIP CARRIER | Obsolete | Active | 5.85 | No | Military grade | -55°C ~ 125°C (TA) | - | e0 | Tin/Lead (Sn/Pb) | SRAMs | 4.5V ~ 5.5V | QUAD | NO LEAD | 1.27 mm | unknown | S-XQCC-N20 | Not Qualified | MILITARY | 64bit | ASYNCHRONOUS | 0.105 mA | 30 ns | RAM | Parallel | 16X4 | 3-STATE | 4 | - | 38535Q/M;38534H;883B | PARALLEL | STANDARD SRAM | 16 x 4 | ||||||||||||||||||||||||||||||
 | Mfr Part No IDT7188L35D | Integrated Device Technology Inc | Datasheet | - | - | Min: 1 Mult: 1 | NO | 22 | 35 ns | INTEGRATED DEVICE TECHNOLOGY INC | 16384 words | 16000 | 70 °C | CERAMIC, GLASS-SEALED | DIP | 0.300 INCH, CERDIP-22 | DIP22,.3 | RECTANGULAR | IN-LINE | Obsolete | DIP | No | 5 V | e0 | No | EAR99 | TIN LEAD | 8542.32.00.41 | DUAL | THROUGH-HOLE | 1 | 2.54 mm | not_compliant | 22 | R-GDIP-T22 | Not Qualified | 5.5 V | COMMERCIAL | 4.5 V | 1 | ASYNCHRONOUS | 0.105 mA | 16KX4 | 3-STATE | 5.08 mm | 4 | 0.00015 A | 65536 bit | PARALLEL | COMMON | STANDARD SRAM | 2 V | NO | 27.051 mm | 7.62 mm | |||||||||||||||||||||||||||||||||||||
 | Mfr Part No IDT7198L85CB | Integrated Device Technology Inc | Datasheet | - | - | Min: 1 Mult: 1 | NO | 24 | 85 ns | INTEGRATED DEVICE TECHNOLOGY INC | 16384 words | 16000 | 125 °C | -55 °C | CERAMIC, METAL-SEALED COFIRED | DIP | 0.300 INCH, SIDE BRAZED, DIP-24 | DIP24,.3 | RECTANGULAR | IN-LINE | Obsolete | DIP | No | 5 V | e0 | No | 3A001.A.2.C | TIN LEAD | 8542.32.00.41 | DUAL | THROUGH-HOLE | 1 | 2.54 mm | not_compliant | 24 | R-CDIP-T24 | Not Qualified | 5.5 V | MILITARY | 4.5 V | 1 | ASYNCHRONOUS | 0.105 mA | 16KX4 | 3-STATE | 5.08 mm | 4 | 0.0006 A | 65536 bit | 38535Q/M;38534H;883B | PARALLEL | COMMON | STANDARD SRAM | 2 V | YES | 30.607 mm | 7.62 mm | |||||||||||||||||||||||||||||||||||
| Mfr Part No MT5C1009C-55L | Micron Technology Inc | Datasheet | - | - | Min: 1 Mult: 1 | NO | 32 | 55 ns | MICRON TECHNOLOGY INC | 131072 words | 128000 | 70 °C | CERAMIC | DIP | DIP32,.4 | RECTANGULAR | IN-LINE | Obsolete | No | 5 V | e0 | EAR99 | Tin/Lead (Sn/Pb) | 8542.32.00.41 | DUAL | THROUGH-HOLE | 2.54 mm | not_compliant | R-XDIP-T32 | Not Qualified | COMMERCIAL | ASYNCHRONOUS | 0.105 mA | 128KX8 | 3-STATE | 8 | 0.0005 A | 1048576 bit | PARALLEL | COMMON | STANDARD SRAM | 2 V | |||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No M5M4C264P-12 | Mitsubishi Electric | Datasheet | - | - | Min: 1 Mult: 1 | NO | 24 | 120 ns | MITSUBISHI ELECTRIC CORP | 65536 words | 64000 | 70 °C | PLASTIC/EPOXY | DIP | DIP, DIP24,.4 | DIP24,.4 | RECTANGULAR | IN-LINE | Obsolete | DIP | No | 5 V | e0 | No | EAR99 | TIN LEAD | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 256 X 4 SAM PORT | 8542.32.00.02 | DUAL | THROUGH-HOLE | 1 | 2.54 mm | unknown | 24 | R-PDIP-T24 | Not Qualified | COMMERCIAL | 2 | ASYNCHRONOUS | 0.105 mA | 64KX4 | 3-STATE | 4.8 mm | 4 | 262144 bit | VIDEO DRAM | 256 | PAGE | 29.6 mm | 10.16 mm | |||||||||||||||||||||||||||||||||||||||||
| Mfr Part No UPD42S4800V-70 | Renesas Electronics Corporation | Datasheet | - | - | Min: 1 Mult: 1 | NO | 28 | 70 ns | RENESAS ELECTRONICS CORP | 524288 words | 512000 | 70 °C | PLASTIC/EPOXY | ZIP | ZIP, ZIP28,.1 | ZIP28,.1 | RECTANGULAR | IN-LINE | Obsolete | No | 5 V | e0 | EAR99 | Tin/Lead (Sn/Pb) | 8542.32.00.02 | ZIG-ZAG | THROUGH-HOLE | 1.27 mm | unknown | R-PZIP-T28 | Not Qualified | COMMERCIAL | 0.105 mA | 512KX8 | 3-STATE | 8 | 0.00015 A | 4194304 bit | COMMON | FAST PAGE DRAM | 1024 | YES | |||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No MT5C1009CW-70 | Micron Technology Inc | Datasheet | - | - | Min: 1 Mult: 1 | NO | 32 | 70 ns | MICRON TECHNOLOGY INC | 131072 words | 128000 | 70 °C | CERAMIC | DIP | DIP32,.6 | RECTANGULAR | IN-LINE | Obsolete | No | 5 V | e0 | EAR99 | Tin/Lead (Sn/Pb) | 8542.32.00.41 | DUAL | THROUGH-HOLE | 2.54 mm | not_compliant | R-XDIP-T32 | Not Qualified | COMMERCIAL | ASYNCHRONOUS | 0.105 mA | 128KX8 | 3-STATE | 8 | 0.007 A | 1048576 bit | PARALLEL | COMMON | STANDARD SRAM | 4.5 V | |||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr Part No MB81V4265S-60PFTN | FUJITSU Limited | Datasheet | - | - | Min: 1 Mult: 1 | YES | 40 | 60 ns | FUJITSU LTD | 262144 words | 256000 | 70 °C | PLASTIC/EPOXY | TSOP2 | TSOP2, TSOP40/44,.46,32 | TSOP40/44,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | TSOP2 | No | 3.3 V | e0 | EAR99 | TIN LEAD | RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH | 8542.32.00.02 | DUAL | GULL WING | 1 | 0.8 mm | unknown | 44 | R-PDSO-G40 | Not Qualified | 3.6 V | COMMERCIAL | 3 V | 1 | ASYNCHRONOUS | 0.105 mA | 256KX16 | 3-STATE | 1.2 mm | 16 | 0.001 A | 4194304 bit | COMMON | EDO DRAM | 512 | FAST PAGE WITH EDO | YES | 18.41 mm | 10.16 mm | |||||||||||||||||||||||||||||||||||||
| Mfr Part No A42L0616V-50UF | AMIC Technology | Datasheet | - | - | Min: 1 Mult: 1 | YES | 44 | 50 ns | AMIC TECHNOLOGY CORP | AMIC Technology | A42L0616V-50UF | 1048576 words | 1000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TSOP2 | TSOP2-50/44 | TSOP44/50,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | 5.82 | Yes | 3.3 V | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH | DRAMs | CMOS | DUAL | GULL WING | 1 | 0.8 mm | unknown | R-PDSO-G44 | Not Qualified | 3.6 V | 3.3 V | INDUSTRIAL | 3 V | 1 | ASYNCHRONOUS | 0.105 mA | 1MX16 | 3-STATE | 1.2 mm | 16 | 0.001 A | 16777216 bit | COMMON | EDO DRAM | 1024 | FAST PAGE | YES | 20.95 mm | 10.16 mm | ||||||||||||||||||||||||||||||||||||
| Mfr Part No IDT6116LA35L24B | Integrated Device Technology Inc | Datasheet | - | - | Min: 1 Mult: 1 | YES | 24 | 35 ns | INTEGRATED DEVICE TECHNOLOGY INC | 2048 words | 2000 | 125 °C | -55 °C | CERAMIC, METAL-SEALED COFIRED | QCCN | LCC-24 | LCC24,.3X.4 | RECTANGULAR | CHIP CARRIER | Obsolete | LCC | No | 5 V | e0 | No | 3A001.A.2.C | TIN LEAD | 8542.32.00.41 | QUAD | NO LEAD | 1 | 1.27 mm | not_compliant | 24 | R-CQCC-N24 | Not Qualified | 5.5 V | MILITARY | 4.5 V | 1 | ASYNCHRONOUS | 0.105 mA | 2KX8 | 3-STATE | 3.048 mm | 8 | 0.0002 A | 16384 bit | 38535Q/M;38534H;883B | PARALLEL | COMMON | STANDARD SRAM | 2 V | YES | 10.16 mm | 7.62 mm | |||||||||||||||||||||||||||||||||||
 | Mfr Part No M5M417800AJ-7 | Mitsubishi Electric | Datasheet | - | - | Min: 1 Mult: 1 | YES | 28 | 70 ns | MITSUBISHI ELECTRIC CORP | 2097152 words | 2000000 | 70 °C | PLASTIC/EPOXY | SOJ | SOJ, SOJ28,.44 | SOJ28,.44 | RECTANGULAR | SMALL OUTLINE | Obsolete | SOJ | No | 5 V | e0 | No | EAR99 | TIN LEAD | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | 8542.32.00.02 | DUAL | J BEND | 1 | 1.27 mm | unknown | 28 | R-PDSO-J28 | Not Qualified | 5.5 V | COMMERCIAL | 4.5 V | 1 | ASYNCHRONOUS | 0.105 mA | 2MX8 | 3-STATE | 3.55 mm | 8 | 0.001 A | 16777216 bit | COMMON | FAST PAGE DRAM | 2048 | FAST PAGE | NO | 18.41 mm | 10.16 mm | ||||||||||||||||||||||||||||||||||||
| Mfr Part No MT5C1009CW-45L | Micron Technology Inc | Datasheet | - | - | Min: 1 Mult: 1 | NO | 32 | 45 ns | MICRON TECHNOLOGY INC | 131072 words | 128000 | 70 °C | CERAMIC | DIP | DIP32,.6 | RECTANGULAR | IN-LINE | Obsolete | No | 5 V | e0 | EAR99 | Tin/Lead (Sn/Pb) | 8542.32.00.41 | DUAL | THROUGH-HOLE | 2.54 mm | not_compliant | R-XDIP-T32 | Not Qualified | COMMERCIAL | ASYNCHRONOUS | 0.105 mA | 128KX8 | 3-STATE | 8 | 0.0005 A | 1048576 bit | PARALLEL | COMMON | STANDARD SRAM | 2 V | |||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No T14L1024N-12J | TM Technology Inc | Datasheet | - | - | Min: 1 Mult: 1 | YES | 32 | 12 ns | TM TECHNOLOGY INC | 131072 words | 128000 | 70 °C | PLASTIC/EPOXY | SOJ | SOJ, SOJ32,.34 | SOJ32,.34 | RECTANGULAR | SMALL OUTLINE | Contact Manufacturer | 3.3 V | 3A991.B.2.B | 8542.32.00.41 | DUAL | J BEND | 1 | 1.27 mm | unknown | R-PDSO-J32 | Not Qualified | 3.6 V | COMMERCIAL | 3 V | ASYNCHRONOUS | 0.105 mA | 128KX8 | 3-STATE | 3.556 mm | 8 | 0.005 A | 1048576 bit | PARALLEL | COMMON | STANDARD SRAM | 3 V | 20.904 mm | 7.62 mm | |||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No IDT71256L55J | Integrated Device Technology Inc | Datasheet | - | - | Min: 1 Mult: 1 | YES | 32 | 55 ns | INTEGRATED DEVICE TECHNOLOGY INC | 1 | 32768 words | 32000 | 70 °C | PLASTIC/EPOXY | QCCJ | QCCJ, LDCC32,.5X.6 | LDCC32,.5X.6 | RECTANGULAR | CHIP CARRIER | Obsolete | QFJ | No | 5 V | e0 | EAR99 | TIN LEAD | 8542.32.00.41 | QUAD | J BEND | 225 | 1 | 1.27 mm | not_compliant | 20 | 32 | R-PQCC-J32 | Not Qualified | 5.5 V | COMMERCIAL | 4.5 V | 1 | ASYNCHRONOUS | 0.105 mA | 32KX8 | 3-STATE | 3.55 mm | 8 | 0.00012 A | 262144 bit | PARALLEL | COMMON | STANDARD SRAM | 2 V | YES | 13.97 mm | 11.43 mm | |||||||||||||||||||||||||||||||||||
| Mfr Part No UPD42S4170LE-80 | Renesas Electronics Corporation | Datasheet | - | - | Min: 1 Mult: 1 | YES | 40 | 80 ns | RENESAS ELECTRONICS CORP | 262144 words | 256000 | 70 °C | PLASTIC/EPOXY | SOJ | SOJ, SOJ40,.44 | SOJ40,.44 | RECTANGULAR | SMALL OUTLINE | Obsolete | No | 5 V | e0 | EAR99 | Tin/Lead (Sn/Pb) | 8542.32.00.02 | DUAL | J BEND | 1.27 mm | unknown | R-PDSO-J40 | Not Qualified | COMMERCIAL | 0.105 mA | 256KX16 | 3-STATE | 16 | 0.0002 A | 4194304 bit | COMMON | FAST PAGE DRAM | 1024 | YES | |||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No IS64LV6416L-12TA2 | Integrated Silicon Solution Inc | Datasheet | - | - | Min: 1 Mult: 1 | YES | 44 | 12 ns | INTEGRATED SILICON SOLUTION INC | 65536 words | 64000 | 105 °C | -40 °C | PLASTIC/EPOXY | TSOP2 | PLASTIC, TSOP2-44 | TSOP44,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | TSOP2 | No | 3.3 V | e0 | No | 3A991.B.2.B | TIN LEAD | 8542.32.00.41 | DUAL | GULL WING | 1 | 0.8 mm | compliant | 44 | R-PDSO-G44 | Not Qualified | 3.63 V | INDUSTRIAL | 2.97 V | ASYNCHRONOUS | 0.105 mA | 64KX16 | 3-STATE | 1.2 mm | 16 | 0.003 A | 1048576 bit | AEC-Q100 | PARALLEL | COMMON | STANDARD SRAM | 2 V | 18.415 mm | 10.16 mm | |||||||||||||||||||||||||||||||||||||
 | Mfr Part No IS64LV6416L-12BA2 | Integrated Silicon Solution Inc | Datasheet | - | - | Min: 1 Mult: 1 | YES | 48 | 12 ns | INTEGRATED SILICON SOLUTION INC | 3 | 65536 words | 64000 | 105 °C | -40 °C | PLASTIC/EPOXY | TFBGA | TFBGA, BGA48,6X8,30 | BGA48,6X8,30 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Active | BGA | No | 3.3 V | e0 | No | 3A991.B.2.B | TIN LEAD | 8542.32.00.41 | BOTTOM | BALL | 1 | 0.75 mm | compliant | 48 | R-PBGA-B48 | Not Qualified | 3.63 V | INDUSTRIAL | 2.97 V | ASYNCHRONOUS | 0.105 mA | 64KX16 | 3-STATE | 1.2 mm | 16 | 0.003 A | 1048576 bit | AEC-Q100 | PARALLEL | COMMON | STANDARD SRAM | 2 V | 8 mm | 6 mm | ||||||||||||||||||||||||||||||||||||
| Mfr Part No IDT6116SA20PGI | Integrated Device Technology Inc | Datasheet | - | - | Min: 1 Mult: 1 | NO | 24 | 19 ns | INTEGRATED DEVICE TECHNOLOGY INC | 2048 words | 2000 | 85 °C | -40 °C | PLASTIC/EPOXY | DIP | 0.600 INCH, PLASTIC, DIP-24 | DIP24,.6 | RECTANGULAR | IN-LINE | Obsolete | DIP | Yes | 5 V | e3 | EAR99 | MATTE TIN | 8542.32.00.41 | DUAL | THROUGH-HOLE | 1 | 2.54 mm | unknown | 24 | R-PDIP-T24 | Not Qualified | 5.5 V | INDUSTRIAL | 4.5 V | ASYNCHRONOUS | 0.105 mA | 2KX8 | 3-STATE | 4.699 mm | 8 | 0.002 A | 16384 bit | PARALLEL | COMMON | STANDARD SRAM | 4.5 V | 31.75 mm | 15.24 mm | |||||||||||||||||||||||||||||||||||||||
| Mfr Part No GS72116AT-10I | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 12 Weeks | YES | 44 | 10 ns | GSI TECHNOLOGY | GSI Technology | GS72116AT-10I | 3 | 131072 words | 128000 | 85 °C | -40 °C | PLASTIC/EPOXY | QFP | QFP, QFP44,.47SQ,32 | QFP44,.47SQ,32 | SQUARE | FLATPACK | Obsolete | QFP | NOT SPECIFIED | 5.77 | Non-Compliant | No | 3.3 V | 3A991.B.2.B | 8542.32.00.41 | SRAMs | CMOS | QUAD | GULL WING | NOT SPECIFIED | 1 | 0.8 mm | compliant | 44 | S-PQFP-G44 | Not Qualified | 3.6 V | 3.3 V | INDUSTRIAL | 3 V | ASYNCHRONOUS | 0.105 mA | 128KX16 | 3-STATE | 16 | 0.01 A | 2 | PARALLEL | COMMON | STANDARD SRAM | 3 V | 10 mm | 10 mm | |||||||||||||||||||||||||||||||
| Mfr Part No GS74116AGP-10T | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 6 Weeks | YES | 44 | 10 ns | GSI TECHNOLOGY | GSI Technology | GS74116AGP-10T | 3 | 262144 words | 256000 | 70 °C | PLASTIC/EPOXY | TSOP2 | TSOP2, TSOP44,.46,32 | TSOP44,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Active | TSOP2 | NOT SPECIFIED | 5.16 | Compliant | Yes | 3.3 V | Yes | 3A991.B.2.B | Pure Matte Tin (Sn) | 8542.32.00.41 | SRAMs | CMOS | DUAL | GULL WING | 260 | 1 | 0.8 mm | compliant | 44 | R-PDSO-G44 | Not Qualified | 3.6 V | 3.3 V | COMMERCIAL | 3 V | ASYNCHRONOUS | 0.105 mA | 256KX16 | 3-STATE | 1.2 mm | 16 | 0.01 A | 4194304 bit | PARALLEL | COMMON | STANDARD SRAM | 3 V | 18.41 mm | 10.16 mm |
-
AM27S07A/B2A
Advanced Micro Devices
Package:Memory
Price: please inquire
-
IDT7188L35D
Integrated Device Technology Inc
Package:Memory
Price: please inquire
-
IDT7198L85CB
Integrated Device Technology Inc
Package:Memory
Price: please inquire
-
MT5C1009C-55L
Micron Technology Inc
Package:Memory
Price: please inquire
-
M5M4C264P-12
Mitsubishi Electric
Package:Memory
Price: please inquire
-
UPD42S4800V-70
Renesas Electronics Corporation
Package:Memory
Price: please inquire
-
MT5C1009CW-70
Micron Technology Inc
Package:Memory
Price: please inquire
-
MB81V4265S-60PFTN
FUJITSU Limited
Package:Memory
Price: please inquire
-
A42L0616V-50UF
AMIC Technology
Package:Memory
Price: please inquire
-
IDT6116LA35L24B
Integrated Device Technology Inc
Package:Memory
Price: please inquire
-
M5M417800AJ-7
Mitsubishi Electric
Package:Memory
Price: please inquire
-
MT5C1009CW-45L
Micron Technology Inc
Package:Memory
Price: please inquire
-
T14L1024N-12J
TM Technology Inc
Package:Memory
Price: please inquire
-
IDT71256L55J
Integrated Device Technology Inc
Package:Memory
Price: please inquire
-
UPD42S4170LE-80
Renesas Electronics Corporation
Package:Memory
Price: please inquire
-
IS64LV6416L-12TA2
Integrated Silicon Solution Inc
Package:Memory
Price: please inquire
-
IS64LV6416L-12BA2
Integrated Silicon Solution Inc
Package:Memory
Price: please inquire
-
IDT6116SA20PGI
Integrated Device Technology Inc
Package:Memory
Price: please inquire
-
GS72116AT-10I
GSI Technology
Package:Memory
Price: please inquire
-
GS74116AGP-10T
GSI Technology
Package:Memory
Price: please inquire