The category is 'Memory'
Memory (29)
- All Manufacturers
- Ihs Manufacturer
- JESD-30 Code
- Memory Density
- Memory IC Type
- Memory Width
- Number of Terminals
- Number of Words
- Number of Words Code
- Operating Temperature-Max
- Organization
- Package Code
- Supply Current-Max
- Supply Current-Max:
0.125 mA
Image | Part Number | Manufacturer | Datasheet | Availability | Pricing(USD) | Quantity | RoHS | Mount | Mounting Type | Package / Case | Surface Mount | Number of Pins | Supplier Device Package | Number of Terminals | Access Time-Max | Clock Frequency-Max (fCLK) | Current - Continuous Drain (Id) @ 25℃ | Ihs Manufacturer | Manufacturer | Manufacturer Package Code | Manufacturer Part Number | Moisture Sensitivity Levels | Number of Words | Number of Words Code | Operating Temperature-Max | Operating Temperature-Min | Package Body Material | Package Code | Package Description | Package Equivalence Code | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Reflow Temperature-Max (s) | Risk Rank | RoHS | Rohs Code | Supply Voltage-Nom (Vsup) | Operating Temperature | Packaging | Series | JESD-609 Code | Pbfree Code | Part Status | ECCN Code | Terminal Finish | Max Operating Temperature | Min Operating Temperature | Additional Feature | HTS Code | Subcategory | Technology | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Terminal Pitch | Reach Compliance Code | Time@Peak Reflow Temperature-Max (s) | Pin Count | JESD-30 Code | Qualification Status | Brand Name | Operating Supply Voltage | Supply Voltage-Max (Vsup) | Power Supplies | Temperature Grade | Supply Voltage-Min (Vsup) | Max Supply Voltage | Min Supply Voltage | Element Configuration | Number of Ports | Nominal Supply Current | Operating Mode | Supply Current-Max | Power - Max | Access Time | Data Bus Width | FET Type | Rds On (Max) @ Id, Vgs | Direction | Vgs(th) (Max) @ Id | Organization | Output Characteristics | Seated Height-Max | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Memory Width | Drain to Source Voltage (Vdss) | Density | Standby Current-Max | Memory Density | Screening Level | Parallel/Serial | I/O Type | Sync/Async | Word Size | Memory IC Type | Programming Voltage | Bus Directional | Standby Voltage-Min | FET Feature | Output Enable | Cycle Time | Refresh Cycles | Sequential Burst Length | Interleaved Burst Length | Access Mode | Self Refresh | Length | Width | Thickness | Radiation Hardening | Lead Free |
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 | Mfr Part No MT5C1008DCJ-35L/IT | Micross | Datasheet | - | - | Min: 1 Mult: 1 | YES | 32 | 35 ns | MICROSS COMPONENTS | Micross Components | MT5C1008DCJ-35L/IT | 131072 words | 128000 | 85 °C | -40 °C | CERAMIC, METAL-SEALED COFIRED | SOJ | SOJ, SOJ32,.44 | SOJ32,.44 | RECTANGULAR | SMALL OUTLINE | End Of Life | SOJ | NOT SPECIFIED | 5.08 | No | 5 V | e0 | No | EAR99 | Tin/Lead (Sn/Pb) | TTL COMPATIBLE INPUTS/OUTPUTS, 2V DATA RETENTION, BATTERY BACKUP, LOW POWER STANDBY | 8542.32.00.41 | SRAMs | CMOS | DUAL | J BEND | NOT SPECIFIED | 1 | 1.27 mm | compliant | 32 | R-CDSO-J32 | Not Qualified | 5.5 V | 5 V | INDUSTRIAL | 4.5 V | ASYNCHRONOUS | 0.125 mA | 128KX8 | 3-STATE | 3.6576 mm | 8 | 0.001 A | 1048576 bit | PARALLEL | COMMON | STANDARD SRAM | 2 V | 20.828 mm | 10.414 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No 7202LA15SO | Renesas | Datasheet | - | - | Min: 1 Mult: 1 | Surface Mount | YES | 28 | 28 | 15 ns | 40 MHz | INTEGRATED DEVICE TECHNOLOGY INC | Integrated Device Technology Inc | PE28 | 7202LA15SO | 3 | 1024 words | 1000 | 70 °C | PLASTIC/EPOXY | SOP | SOIC-28 | SOP28,.5 | RECTANGULAR | SMALL OUTLINE | Obsolete | SOIC | NOT SPECIFIED | 5.09 | Compliant | No | 5 V | e0 | No | EAR99 | Tin/Lead (Sn85Pb15) | 70 °C | 0 °C | RETRANSMIT | 8542.32.00.71 | FIFOs | CMOS | DUAL | GULL WING | 225 | 1 | 1.27 mm | not_compliant | 28 | R-PDSO-G28 | Not Qualified | Integrated Device Technology | 5 V | 5.5 V | 5 V | COMMERCIAL | 4.5 V | 5.5 V | 4.5 V | Dual | 80 mA | ASYNCHRONOUS | 0.125 mA | 15 ns | 9 b | Unidirectional | 1KX9 | 3.048 mm | 9 | 9 kb | 0.0005 A | 9216 bit | PARALLEL | Asynchronous | 9 b | OTHER FIFO | Unidirectional | NO | 25 ns | 17.9 mm | 8.4 mm | 2.62 mm | No | Contains Lead | ||||||||||||||||||||||||||||||
| Mfr Part No 5962-3829411MZA | Temic Semiconductors | Datasheet | - | - | Min: 1 Mult: 1 | NO | 28 | 45 ns | TEMIC SEMICONDUCTORS | 8192 words | 8000 | 125 °C | -55 °C | CERAMIC, GLASS-SEALED | DIP | DIP-28 | DIP28,.3 | RECTANGULAR | IN-LINE | Transferred | No | 5 V | e0 | Tin/Lead (Sn/Pb) - hot dipped | DUAL | THROUGH-HOLE | 1 | 2.54 mm | unknown | R-GDIP-T28 | Not Qualified | MILITARY | 1 | ASYNCHRONOUS | 0.125 mA | 8KX8 | 3-STATE | 8 | 0.02 A | 65536 bit | MIL-STD-883 | PARALLEL | COMMON | STANDARD SRAM | 4.5 V | YES | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No M5M2167S-70 | Mitsubishi Electric | Datasheet | - | - | Min: 1 Mult: 1 | NO | 20 | 70 ns | MITSUBISHI ELECTRIC CORP | 16384 words | 16000 | 70 °C | CERAMIC | DIP | DIP, DIP20,.3 | DIP20,.3 | RECTANGULAR | IN-LINE | Obsolete | No | 5 V | e0 | EAR99 | Tin/Lead (Sn/Pb) | 8542.32.00.41 | DUAL | THROUGH-HOLE | 2.54 mm | unknown | R-XDIP-T20 | Not Qualified | COMMERCIAL | ASYNCHRONOUS | 0.125 mA | 16KX1 | 3-STATE | 1 | 16384 bit | PARALLEL | SEPARATE | STANDARD SRAM | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No M2732A-20F1 | STMicroelectronics | Datasheet | 2800 | - | Min: 1 Mult: 1 | NO | 24 | 200 ns | STMICROELECTRONICS | 4096 words | 4000 | 70 °C | CERAMIC, GLASS-SEALED | DIP | WINDOWED, FRIT SEALED, CERAMIC, DIP-24 | DIP24,.6 | RECTANGULAR | IN-LINE | Obsolete | DIP | No | 5 V | e0 | EAR99 | TIN LEAD | 21V PROGRAMMING VOLTAGE | 8542.32.00.61 | DUAL | THROUGH-HOLE | 1 | 2.54 mm | not_compliant | 24 | R-GDIP-T24 | Not Qualified | 5.5 V | COMMERCIAL | 4.5 V | ASYNCHRONOUS | 0.125 mA | 4KX8 | 3-STATE | 5.715 mm | 8 | 32768 bit | PARALLEL | COMMON | UVPROM | 21 V | 31.75 mm | 15.24 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No HM3-65764N-5 | Temic Semiconductors | Datasheet | - | - | Min: 1 Mult: 1 | NO | 28 | 55 ns | TEMIC SEMICONDUCTORS | 8192 words | 8000 | 70 °C | PLASTIC/EPOXY | DIP | DIP-28 | DIP28,.3 | RECTANGULAR | IN-LINE | Obsolete | No | 5 V | e0 | TIN LEAD | DUAL | THROUGH-HOLE | 1 | 2.54 mm | unknown | R-PDIP-T28 | Not Qualified | 5.5 V | COMMERCIAL | 4.5 V | 1 | ASYNCHRONOUS | 0.125 mA | 8KX8 | 3-STATE | 8 | 0.02 A | 65536 bit | PARALLEL | COMMON | STANDARD SRAM | 4.5 V | YES | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr Part No MSM5118165D-60TS-K | LAPIS Semiconductor Co Ltd | Datasheet | - | - | Min: 1 Mult: 1 | YES | 44 | 60 ns | LAPIS SEMICONDUCTOR CO LTD | 1048576 words | 1000000 | 70 °C | PLASTIC/EPOXY | TSOP2 | TSOP2, TSOP44/50,.46,32 | TSOP44/50,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | TSOP2 | 5 V | EAR99 | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | 8542.32.00.02 | DUAL | GULL WING | 1 | 0.8 mm | unknown | 50 | R-PDSO-G44 | Not Qualified | 5.5 V | COMMERCIAL | 4.5 V | 1 | ASYNCHRONOUS | 0.125 mA | 1MX16 | 3-STATE | 1.2 mm | 16 | 0.001 A | 16777216 bit | COMMON | EDO DRAM | 1024 | FAST PAGE WITH EDO | NO | 20.95 mm | 10.16 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No S128K8-55CC | Inova Microelectronics Corp | Datasheet | - | - | Min: 1 Mult: 1 | NO | 32 | 55 ns | INOVA MICROELECTRONICS CORP | 131072 words | 128000 | 70 °C | CERAMIC | DIP | DIP, DIP32,.6 | DIP32,.6 | RECTANGULAR | IN-LINE | Obsolete | No | 5 V | EAR99 | 8542.32.00.41 | DUAL | THROUGH-HOLE | 2.54 mm | unknown | R-XDIP-T32 | Not Qualified | COMMERCIAL | ASYNCHRONOUS | 0.125 mA | 128KX8 | 3-STATE | 8 | 0.004 A | 1048576 bit | PARALLEL | COMMON | STANDARD SRAM | 4.5 V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No IDT71256L30DB | Integrated Device Technology Inc | Datasheet | - | - | Min: 1 Mult: 1 | NO | 28 | 30 ns | INTEGRATED DEVICE TECHNOLOGY INC | 32768 words | 32000 | 125 °C | -55 °C | CERAMIC, GLASS-SEALED | DIP | 0.600 INCH, CERDIP-28 | DIP28,.6 | RECTANGULAR | IN-LINE | Obsolete | DIP | No | 5 V | e0 | 3A001.A.2.C | TIN LEAD | 8542.32.00.41 | DUAL | THROUGH-HOLE | 1 | 2.54 mm | not_compliant | 28 | R-GDIP-T28 | Not Qualified | 5.5 V | MILITARY | 4.5 V | 1 | ASYNCHRONOUS | 0.125 mA | 32KX8 | 3-STATE | 5.08 mm | 8 | 0.0005 A | 262144 bit | 38535Q/M;38534H;883B | PARALLEL | COMMON | STANDARD SRAM | 2 V | YES | 37.211 mm | 15.24 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No 7200L12SO | Renesas | Datasheet | - | - | Min: 1 Mult: 1 | Surface Mount | YES | 28 | 28 | 12 ns | 50 MHz | INTEGRATED DEVICE TECHNOLOGY INC | Integrated Device Technology Inc | PE28 | 7200L12SO | 3 | 256 words | 256 | 70 °C | PLASTIC/EPOXY | SOP | SOIC-28 | SOP28,.5 | RECTANGULAR | SMALL OUTLINE | Obsolete | SOIC | NOT SPECIFIED | 5.21 | Compliant | No | 5 V | e0 | No | EAR99 | Tin/Lead (Sn85Pb15) | 70 °C | 0 °C | RETRANSMIT | 8542.32.00.71 | FIFOs | CMOS | DUAL | GULL WING | 225 | 1 | 1.27 mm | not_compliant | 28 | R-PDSO-G28 | Not Qualified | Integrated Device Technology | 5 V | 5.5 V | 5 V | COMMERCIAL | 4.5 V | 5.5 V | 4.5 V | Dual | 80 mA | ASYNCHRONOUS | 0.125 mA | 12 ns | 9 b | Unidirectional | 256X9 | 3.048 mm | 9 | 2.3 kb | 0.0005 A | 2304 bit | PARALLEL | Asynchronous | 9 b | OTHER FIFO | Unidirectional | NO | 20 ns | 17.9 mm | 8.4 mm | 2.62 mm | No | Contains Lead | ||||||||||||||||||||||||||||||
| Mfr Part No 7201LA25SO8 | Renesas | Datasheet | - | - | Min: 1 Mult: 1 | YES | 28 | 25 ns | 28.5 MHz | INTEGRATED DEVICE TECHNOLOGY INC | Integrated Device Technology Inc | PE28 | 7201LA25SO8 | 3 | 512 words | 512 | 70 °C | PLASTIC/EPOXY | SOP | SOIC-28 | SOP28,.5 | RECTANGULAR | SMALL OUTLINE | Obsolete | SOIC | NOT SPECIFIED | 5.34 | No | 5 V | e0 | No | EAR99 | Tin/Lead (Sn85Pb15) | RETRANSMIT | 8542.32.00.71 | FIFOs | CMOS | DUAL | GULL WING | 225 | 1 | 1.27 mm | not_compliant | 28 | R-PDSO-G28 | Not Qualified | Integrated Device Technology | 5.5 V | 5 V | COMMERCIAL | 4.5 V | ASYNCHRONOUS | 0.125 mA | 512X9 | 3.048 mm | 9 | 0.0005 A | 4608 bit | PARALLEL | OTHER FIFO | NO | 35 ns | 18.3642 mm | 8.763 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No MT5C1008ECA-70/XT | Micross | Datasheet | - | - | Min: 1 Mult: 1 | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | YES | 8-SOIC | 32 | 45 ns | 7.6A | MICROSS COMPONENTS | Micross Components | MT5C1008ECA-70/XT | 131072 words | 128000 | 125 °C | -55 °C | CERAMIC, METAL-SEALED COFIRED | QCCN | QCCN, LCC32,.45X.55 | LCC32,.45X.55 | RECTANGULAR | CHIP CARRIER | End Of Life | QFJ | NOT SPECIFIED | 5.02 | No | 5 V | -55°C ~ 150°C (TJ) | Tape & Reel (TR) | -- | e0 | No | Active | 3A001.A.2.C | Tin/Lead (Sn/Pb) | TTL COMPATIBLE INPUTS/OUTPUTS, 2V DATA RETENTION, BATTERY BACKUP, LOW POWER STANDBY | 8542.32.00.41 | SRAMs | CMOS | QUAD | NO LEAD | NOT SPECIFIED | 1 | 1.27 mm | compliant | 32 | R-CQCC-N32 | Not Qualified | 5.5 V | 5 V | MILITARY | 4.5 V | ASYNCHRONOUS | 0.125 mA | 2W | 2 N-Channel (Dual) | 23 mOhm @ 7.6A, 10V | 1.1V @ 250µA | 128KX8 | 3-STATE | 3.048 mm | 630pF @ 15V | 12.5nC @ 10V | 8 | 20V | 0.01 A | 1048576 bit | PARALLEL | COMMON | STANDARD SRAM | 4.5 V | Logic Level Gate | 13.97 mm | 11.43 mm | ||||||||||||||||||||||||||||||||||||
| Mfr Part No 7201LA12SO | Renesas | Datasheet | - | - | Min: 1 Mult: 1 | Surface Mount | YES | 28 | 28 | 12 ns | 50 MHz | INTEGRATED DEVICE TECHNOLOGY INC | Integrated Device Technology Inc | PE28 | 7201LA12SO | 3 | 512 words | 512 | 70 °C | PLASTIC/EPOXY | SOP | SOIC-28 | SOP28,.5 | RECTANGULAR | SMALL OUTLINE | Obsolete | SOIC | NOT SPECIFIED | 5.3 | Non-Compliant | No | 5 V | e0 | No | EAR99 | Tin/Lead (Sn85Pb15) | 70 °C | 0 °C | RETRANSMIT | 8542.32.00.71 | FIFOs | CMOS | DUAL | GULL WING | 225 | 1 | 1.27 mm | not_compliant | 28 | R-PDSO-G28 | Not Qualified | Integrated Device Technology | 5 V | 5.5 V | 5 V | COMMERCIAL | 4.5 V | 5.5 V | 4.5 V | Dual | 80 mA | ASYNCHRONOUS | 0.125 mA | 12 ns | 9 b | Unidirectional | 512X9 | 3.048 mm | 9 | 4.5 kb | 0.0005 A | 4608 bit | PARALLEL | Asynchronous | 9 b | OTHER FIFO | Unidirectional | NO | 20 ns | 17.9 mm | 8.4 mm | 2.62 mm | No | Contains Lead | ||||||||||||||||||||||||||||||
| Mfr Part No 7200L25SO8 | Renesas | Datasheet | - | - | Min: 1 Mult: 1 | YES | 28 | 25 ns | 28.5 MHz | INTEGRATED DEVICE TECHNOLOGY INC | Integrated Device Technology Inc | PE28 | 7200L25SO8 | 3 | 256 words | 256 | 70 °C | PLASTIC/EPOXY | SOP | SOIC-28 | SOP28,.5 | RECTANGULAR | SMALL OUTLINE | Obsolete | SOIC | NOT SPECIFIED | 5.28 | Non-Compliant | No | 5 V | e0 | No | EAR99 | Tin/Lead (Sn85Pb15) | RETRANSMIT | 8542.32.00.71 | FIFOs | CMOS | DUAL | GULL WING | 225 | 1 | 1.27 mm | not_compliant | 28 | R-PDSO-G28 | Not Qualified | Integrated Device Technology | 5.5 V | 5 V | COMMERCIAL | 4.5 V | ASYNCHRONOUS | 0.125 mA | 256X9 | 3.048 mm | 9 | 0.0005 A | 2304 bit | PARALLEL | OTHER FIFO | NO | 35 ns | 18.3642 mm | 8.763 mm | |||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No 7201LA35SO8 | Renesas | Datasheet | - | - | Min: 1 Mult: 1 | YES | 28 | 35 ns | 22.2 MHz | INTEGRATED DEVICE TECHNOLOGY INC | Integrated Device Technology Inc | PE28 | 7201LA35SO8 | 3 | 512 words | 512 | 70 °C | PLASTIC/EPOXY | SOP | SOP, SOP28,.5 | SOP28,.5 | RECTANGULAR | SMALL OUTLINE | Obsolete | SOIC | NOT SPECIFIED | 5.49 | No | 5 V | e0 | No | EAR99 | Tin/Lead (Sn85Pb15) | RETRANSMIT | 8542.32.00.71 | FIFOs | CMOS | DUAL | GULL WING | 225 | 1 | 1.27 mm | not_compliant | 28 | R-PDSO-G28 | Not Qualified | Integrated Device Technology | 5.5 V | 5 V | COMMERCIAL | 4.5 V | ASYNCHRONOUS | 0.125 mA | 512X9 | 3.048 mm | 9 | 0.0005 A | 4608 bit | PARALLEL | OTHER FIFO | NO | 45 ns | 18.3642 mm | 8.763 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No K4S641632E-TP1H | Samsung Semiconductor | Datasheet | - | - | Min: 1 Mult: 1 | YES | 54 | 6 ns | 100 MHz | SAMSUNG SEMICONDUCTOR INC | 3 | 4194304 words | 4000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TSOP | TSOP, TSOP54,.46,32 | TSOP54,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | No | 3.3 V | e0 | No | EAR99 | TIN LEAD | 8542.32.00.02 | DUAL | GULL WING | 0.8 mm | unknown | R-PDSO-G54 | Not Qualified | INDUSTRIAL | 0.125 mA | 4MX16 | 3-STATE | 16 | 0.001 A | 67108864 bit | COMMON | SYNCHRONOUS DRAM | 4096 | 1,2,4,8,FP | 1,2,4,8 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No S128K8-85CC | Inova Microelectronics Corp | Datasheet | - | - | Min: 1 Mult: 1 | NO | 32 | 85 ns | INOVA MICROELECTRONICS CORP | 131072 words | 128000 | 70 °C | CERAMIC | DIP | DIP, DIP32,.6 | DIP32,.6 | RECTANGULAR | IN-LINE | Obsolete | No | 5 V | EAR99 | 8542.32.00.41 | DUAL | THROUGH-HOLE | 2.54 mm | unknown | R-XDIP-T32 | Not Qualified | COMMERCIAL | ASYNCHRONOUS | 0.125 mA | 128KX8 | 3-STATE | 8 | 0.004 A | 1048576 bit | PARALLEL | COMMON | STANDARD SRAM | 4.5 V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No H5TC1G43TFR-G7A | SK Hynix Inc | Datasheet | - | - | Min: 1 Mult: 1 | YES | 78 | 533 MHz | SK HYNIX INC | 268435456 words | 256000000 | 85 °C | PLASTIC/EPOXY | TFBGA | TFBGA, BGA78,9X13,32 | BGA78,9X13,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | BGA | Yes | 1.35 V | e1 | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | AUTO/SELF REFRESH | 8542.32.00.32 | BOTTOM | BALL | 260 | 1 | 0.8 mm | unknown | 20 | 78 | R-PBGA-B78 | Not Qualified | 1.45 V | OTHER | 1.283 V | 1 | SYNCHRONOUS | 0.125 mA | 256MX4 | 3-STATE | 1.2 mm | 4 | 1073741824 bit | COMMON | DDR3L DRAM | 8192 | 4,8 | 4,8 | MULTI BANK PAGE BURST | YES | 11 mm | 7.5 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr Part No VG2618160CJ-6 | Vanguard International Semiconductor Corporation | Datasheet | - | - | Min: 1 Mult: 1 | YES | 42 | 60 ns | VANGUARD INTERNATIONAL SEMICONDUCTOR CORP | 1048576 words | 1000000 | 70 °C | PLASTIC/EPOXY | SOJ | SOJ, SOJ42,.44 | SOJ42,.44 | RECTANGULAR | SMALL OUTLINE | Obsolete | SOJ | 5 V | EAR99 | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | 8542.32.00.02 | DUAL | J BEND | 1 | 1.27 mm | unknown | 42 | R-PDSO-J42 | Not Qualified | 5.5 V | COMMERCIAL | 4.5 V | 1 | ASYNCHRONOUS | 0.125 mA | 1MX16 | 3-STATE | 3.76 mm | 16 | 0.001 A | 16777216 bit | COMMON | FAST PAGE DRAM | 1024 | FAST PAGE | NO | 27.31 mm | 10.16 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No HMU-65764H-5 | Temic Semiconductors | Datasheet | - | - | Min: 1 Mult: 1 | YES | 28 | 25 ns | TEMIC SEMICONDUCTORS | 8192 words | 8000 | 70 °C | PLASTIC/EPOXY | SOJ | SOJ28,.34 | RECTANGULAR | SMALL OUTLINE | Obsolete | No | 5 V | e0 | TIN LEAD | DUAL | J BEND | 1 | 1.27 mm | unknown | R-PDSO-J28 | Not Qualified | 5.5 V | COMMERCIAL | 4.5 V | 1 | ASYNCHRONOUS | 0.125 mA | 8KX8 | 3-STATE | 8 | 0.02 A | 65536 bit | PARALLEL | COMMON | STANDARD SRAM | 4.5 V | YES |
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MT5C1008DCJ-35L/IT
Micross
Package:Memory
Price: please inquire
-
7202LA15SO
Renesas
Package:Memory
Price: please inquire
-
5962-3829411MZA
Temic Semiconductors
Package:Memory
Price: please inquire
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M5M2167S-70
Mitsubishi Electric
Package:Memory
Price: please inquire
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M2732A-20F1
STMicroelectronics
Package:Memory
Price: please inquire
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HM3-65764N-5
Temic Semiconductors
Package:Memory
Price: please inquire
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MSM5118165D-60TS-K
LAPIS Semiconductor Co Ltd
Package:Memory
Price: please inquire
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S128K8-55CC
Inova Microelectronics Corp
Package:Memory
Price: please inquire
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IDT71256L30DB
Integrated Device Technology Inc
Package:Memory
Price: please inquire
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7200L12SO
Renesas
Package:Memory
Price: please inquire
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7201LA25SO8
Renesas
Package:Memory
Price: please inquire
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MT5C1008ECA-70/XT
Micross
Package:Memory
Price: please inquire
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7201LA12SO
Renesas
Package:Memory
Price: please inquire
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7200L25SO8
Renesas
Package:Memory
Price: please inquire
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7201LA35SO8
Renesas
Package:Memory
Price: please inquire
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K4S641632E-TP1H
Samsung Semiconductor
Package:Memory
Price: please inquire
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S128K8-85CC
Inova Microelectronics Corp
Package:Memory
Price: please inquire
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H5TC1G43TFR-G7A
SK Hynix Inc
Package:Memory
Price: please inquire
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VG2618160CJ-6
Vanguard International Semiconductor Corporation
Package:Memory
Price: please inquire
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HMU-65764H-5
Temic Semiconductors
Package:Memory
Price: please inquire