The category is 'Memory'
Memory (52)
- All Manufacturers
- Access Time-Max
- I/O Type
- Ihs Manufacturer
- JESD-30 Code
- Memory Density
- Memory IC Type
- Memory Width
- Number of Terminals
- Number of Words
- Number of Words Code
- Output Characteristics
- Supply Current-Max
- Supply Current-Max:
0.13 mA
Image | Part Number | Manufacturer | Datasheet | Availability | Pricing(USD) | Quantity | RoHS | Factory Lead Time | Mounting Type | Package / Case | Surface Mount | Supplier Device Package | Number of Terminals | Access Time-Max | Base Product Number | Clock Frequency-Max (fCLK) | Ihs Manufacturer | Manufacturer | Manufacturer Part Number | Maximum Operating Supply Voltage | Memory Types | Mfr | Minimum Operating Supply Voltage | Moisture Sensitivity Levels | Mounting | Number of I/O Lines | Number of Words | Number of Words Code | Operating Temperature-Max | Operating Temperature-Min | Package | Package Body Material | Package Code | Package Description | Package Equivalence Code | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Product Status | Reflow Temperature-Max (s) | Risk Rank | Rohs Code | Supplier Package | Supply Voltage-Nom (Vsup) | Timing Type | Typical Operating Supply Voltage | Usage Level | Operating Temperature | Series | JESD-609 Code | Pbfree Code | ECCN Code | Terminal Finish | Additional Feature | HTS Code | Subcategory | Technology | Voltage - Supply | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Terminal Pitch | Reach Compliance Code | Pin Count | JESD-30 Code | Qualification Status | Supply Voltage-Max (Vsup) | Power Supplies | Temperature Grade | Supply Voltage-Min (Vsup) | Memory Size | Number of Ports | Operating Mode | Supply Current-Max | Access Time | Memory Format | Memory Interface | Organization | Output Characteristics | Seated Height-Max | Memory Width | Write Cycle Time - Word, Page | Address Bus Width | Density | Standby Current-Max | Memory Density | Screening Level | Parallel/Serial | I/O Type | Memory IC Type | Standby Voltage-Min | Output Enable | Refresh Cycles | Sequential Burst Length | Interleaved Burst Length | Access Mode | Self Refresh | Memory Organization | Length | Width |
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 | Mfr Part No IS42S16800D-7TL | ISSI | Datasheet | 647 | - | Min: 1 Mult: 1 | YES | 54 | 5.4 ns | 143 MHz | INTEGRATED SILICON SOLUTION INC | Integrated Silicon Solution Inc | IS42S16800D-7TL | 3 | 8388608 words | 8000000 | 70 °C | PLASTIC/EPOXY | TSOP2 | TSOP2, TSOP54,.46,32 | TSOP54,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | TSOP2 | 10 | 5.04 | Yes | 3.3 V | e3 | EAR99 | Matte Tin (Sn) - annealed | AUTO/SELF REFRESH | 8542.32.00.02 | DRAMs | CMOS | DUAL | GULL WING | 260 | 1 | 0.8 mm | compliant | 54 | R-PDSO-G54 | Not Qualified | 3.6 V | 3.3 V | COMMERCIAL | 3 V | 1 | SYNCHRONOUS | 0.13 mA | 8MX16 | 3-STATE | 1.2 mm | 16 | 0.001 A | 134217728 bit | COMMON | SYNCHRONOUS DRAM | 4096 | 1,2,4,8,FP | 1,2,4,8 | FOUR BANK PAGE BURST | YES | 22.22 mm | 10.16 mm | |||||||||||||||||||||||||||||||||||
| Mfr Part No K4S561632H-UC75 | Samsung | Datasheet | 6 | - | Min: 1 Mult: 1 | YES | 54 | 5.4 ns | 133 MHz | SAMSUNG SEMICONDUCTOR INC | Samsung Semiconductor | K4S561632H-UC75 | 3 | 16777216 words | 16000000 | 70 °C | PLASTIC/EPOXY | TSOP2 | TSOP2, TSOP54,.56,32 | TSOP54,.56,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | NOT SPECIFIED | 5.79 | Yes | 3.3 V | e6 | Yes | Tin/Bismuth (Sn97Bi3) | AUTO/SELF REFRESH | DRAMs | CMOS | DUAL | GULL WING | 260 | 1 | 0.8 mm | unknown | R-PDSO-G54 | Not Qualified | 3.6 V | 3.3 V | COMMERCIAL | 3 V | 1 | SYNCHRONOUS | 0.13 mA | 16MX16 | 3-STATE | 1.2 mm | 16 | 0.002 A | 268435456 bit | COMMON | SYNCHRONOUS DRAM | 8192 | 1,2,4,8,FP | 1,2,4,8 | FOUR BANK PAGE BURST | YES | 22.22 mm | 10.16 mm | ||||||||||||||||||||||||||||||||||||||
| Mfr Part No MT5C1008CW-25/IT | Micross | Datasheet | - | - | Min: 1 Mult: 1 | NO | 32 | 25 ns | MICROSS COMPONENTS | Micross Components | MT5C1008CW-25/IT | 131072 words | 128000 | 85 °C | -40 °C | CERAMIC, METAL-SEALED COFIRED | DIP | DIP, DIP32,.6 | DIP32,.6 | RECTANGULAR | IN-LINE | End Of Life | DIP | NOT SPECIFIED | 5.36 | No | 5 V | e0 | No | EAR99 | Tin/Lead (Sn/Pb) | TTL COMPATIBLE INPUTS/OUTPUTS, 2V DATA RETENTION, BATTERY BACKUP, LOW POWER STANDBY | 8542.32.00.41 | SRAMs | CMOS | DUAL | THROUGH-HOLE | NOT SPECIFIED | 1 | 2.54 mm | compliant | 32 | R-CDIP-T32 | Not Qualified | 5.5 V | 5 V | INDUSTRIAL | 4.5 V | ASYNCHRONOUS | 0.13 mA | 128KX8 | 3-STATE | 4.34 mm | 8 | 0.01 A | 1048576 bit | PARALLEL | COMMON | STANDARD SRAM | 4.5 V | 40.64 mm | 15.24 mm | |||||||||||||||||||||||||||||||||||||||
| Mfr Part No MT5C1008CW-25L/IT | Micross | Datasheet | - | - | Min: 1 Mult: 1 | NO | 32 | 25 ns | MICROSS COMPONENTS | Micross Components | MT5C1008CW-25L/IT | 131072 words | 128000 | 85 °C | -40 °C | CERAMIC, METAL-SEALED COFIRED | DIP | DIP, DIP32,.6 | DIP32,.6 | RECTANGULAR | IN-LINE | End Of Life | DIP | NOT SPECIFIED | 5.36 | No | 5 V | e0 | No | EAR99 | Tin/Lead (Sn/Pb) | TTL COMPATIBLE INPUTS/OUTPUTS, 2V DATA RETENTION, BATTERY BACKUP, LOW POWER STANDBY | 8542.32.00.41 | SRAMs | CMOS | DUAL | THROUGH-HOLE | NOT SPECIFIED | 1 | 2.54 mm | compliant | 32 | R-CDIP-T32 | Not Qualified | 5.5 V | 5 V | INDUSTRIAL | 4.5 V | ASYNCHRONOUS | 0.13 mA | 128KX8 | 3-STATE | 4.34 mm | 8 | 0.001 A | 1048576 bit | PARALLEL | COMMON | STANDARD SRAM | 2 V | 40.64 mm | 15.24 mm | |||||||||||||||||||||||||||||||||||||||
| Mfr Part No IS42S32400D-7TL | ISSI | Datasheet | 439 | - | Min: 1 Mult: 1 | YES | 86 | 5.4 ns | 143 MHz | INTEGRATED SILICON SOLUTION INC | Integrated Silicon Solution Inc | IS42S32400D-7TL | 3 | 4194304 words | 4000000 | 70 °C | PLASTIC/EPOXY | SOP | SOP, TSSOP86,.46,20 | TSSOP86,.46,20 | RECTANGULAR | SMALL OUTLINE | Obsolete | TSOP2 | 40 | 5.08 | Yes | 3.3 V | e3 | EAR99 | Matte Tin (Sn) - annealed | AUTO/SELF REFRESH | 8542.32.00.02 | DRAMs | CMOS | DUAL | GULL WING | 260 | 1 | 0.5 mm | compliant | 86 | R-PDSO-G86 | Not Qualified | 3.6 V | 3.3 V | COMMERCIAL | 3 V | 1 | SYNCHRONOUS | 0.13 mA | 4MX32 | 3-STATE | 1.2 mm | 32 | 0.001 A | 134217728 bit | COMMON | SYNCHRONOUS DRAM | 4096 | 1,2,4,8,FP | 1,2,4,8 | FOUR BANK PAGE BURST | YES | 22.22 mm | 10.16 mm | |||||||||||||||||||||||||||||||||||
| Mfr Part No AS7C32096A-15TC | Alliance Memory | Datasheet | - | - | Min: 1 Mult: 1 | YES | 44 | 15 ns | ALLIANCE MEMORY INC | Fluke | 4184249 | 262144 words | 256000 | 70 °C | PLASTIC/EPOXY | TSOP2 | TSOP2, TSOP44,.46,32 | TSOP44,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | TSOP2 | 30 | 5.51 | No | 3.3 V | e0 | No | 3A991.B.2.A | TIN LEAD | 8542.32.00.41 | SRAMs | CMOS | DUAL | GULL WING | 240 | 1 | 0.8 mm | compliant | 44 | R-PDSO-G44 | Not Qualified | 3.6 V | 3/3.3 V | COMMERCIAL | 3 V | ASYNCHRONOUS | 0.13 mA | 256KX8 | 3-STATE | 1.2 mm | 8 | 0.008 A | 2097152 bit | PARALLEL | COMMON | STANDARD SRAM | 3 V | 18.415 mm | 10.16 mm | |||||||||||||||||||||||||||||||||||||||||
| Mfr Part No CY7C1021BNL-15ZSXA | Infineon | Datasheet | - | - | Min: 1 Mult: 1 | 1 Week | Surface Mount | 44-TSOP (0.400, 10.16mm Width) | YES | 44-TSOP II | 44 | 15 ns | CY7C1021 | CYPRESS SEMICONDUCTOR CORP | Cypress Semiconductor | CY7C1021BNL-15ZSXA | 5.5 V | Volatile | Infineon Technologies | 4.5 V | 3 | Surface Mount | 16 Bit | 64 kWords | 64000 | 85 °C | -40 °C | Tray | PLASTIC/EPOXY | TSOP2 | TSOP2, TSOP44,.46,32 | TSOP44,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | TSOP2 | Obsolete | 30 | 5.57 | Yes | TSOP-II | 5 V | Asynchronous | 5.0000 V | Automotive grade | -40 to 85 °C | - | e4 | Yes | 3A991.B.2.B | Nickel/Palladium/Gold (Ni/Pd/Au) | 8542.32.00.41 | SRAMs | SRAM - Asynchronous | 4.5V ~ 5.5V | DUAL | GULL WING | 260 | 1 | 0.8 mm | compliant | 44 | R-PDSO-G44 | Not Qualified | 5.5 V | 5 V | INDUSTRIAL | 4.5 V | 1Mbit | 1 | ASYNCHRONOUS | 0.13 mA | 15 ns | SRAM | Parallel | 64KX16 | 3-STATE | 1.194 mm | 16 | 15ns | 16 Bit | 1 Mb | 0.0005 A | 1048576 bit | Automotive | PARALLEL | COMMON | STANDARD SRAM | 4.5 V | 64K x 16 | 18.415 mm | 10.16 mm | |||||||||
| Mfr Part No A43L2616BV-6F | AMIC Technology | Datasheet | - | - | Min: 1 Mult: 1 | YES | 54 | 5 ns | 166 MHz | AMIC TECHNOLOGY CORP | AMIC Technology | A43L2616BV-6F | 4194304 words | 4000000 | 70 °C | PLASTIC/EPOXY | TSOP2 | ROHS COMPLIANT, TSOP2-54 | TSOP54,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Contact Manufacturer | TSOP2 | NOT SPECIFIED | 5.7 | Yes | 3.3 V | Yes | EAR99 | AUTO/SELF REFRESH | 8542.32.00.02 | DRAMs | CMOS | DUAL | GULL WING | NOT SPECIFIED | 1 | 0.8 mm | unknown | 54 | R-PDSO-G54 | Not Qualified | 3.6 V | 3.3 V | COMMERCIAL | 3 V | 1 | SYNCHRONOUS | 0.13 mA | 4MX16 | 3-STATE | 1.2 mm | 16 | 0.002 A | 67108864 bit | COMMON | SYNCHRONOUS DRAM | 4096 | 1,2,4,8,FP | 1,2,4,8 | FOUR BANK PAGE BURST | Yes | 22.22 mm | 10.16 mm | |||||||||||||||||||||||||||||||||||||
| Mfr Part No MCM6226BWJ15 | Motorola Semiconductor Products | Datasheet | - | - | Min: 1 Mult: 1 | YES | 32 | 15 ns | MOTOROLA INC | 131072 words | 128000 | 70 °C | PLASTIC/EPOXY | SOJ | 0.400 INCH, SOJ-32 | SOJ32,.44 | RECTANGULAR | SMALL OUTLINE | Obsolete | No | 5 V | e0 | 3A991.B.2.B | TIN LEAD | 8542.32.00.41 | DUAL | J BEND | 1 | 1.27 mm | unknown | R-PDSO-J32 | Not Qualified | 5.5 V | COMMERCIAL | 4.5 V | 1 | ASYNCHRONOUS | 0.13 mA | 128KX8 | 3-STATE | 3.75 mm | 8 | 0.005 A | 1048576 bit | PARALLEL | COMMON | STANDARD SRAM | 4.5 V | YES | 20.96 mm | 10.16 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No MCM6226BWJ15 | Freescale Semiconductor | Datasheet | - | - | Min: 1 Mult: 1 | YES | 32 | 15 ns | MOTOROLA SEMICONDUCTOR PRODUCTS | 131072 words | 128000 | 70 °C | PLASTIC/EPOXY | SOJ | SOJ, SOJ32,.44 | SOJ32,.44 | RECTANGULAR | SMALL OUTLINE | Obsolete | No | 5 V | e0 | Tin/Lead (Sn/Pb) | DUAL | J BEND | 1.27 mm | unknown | R-PDSO-J32 | Not Qualified | 5 V | COMMERCIAL | ASYNCHRONOUS | 0.13 mA | 128KX8 | 3-STATE | 8 | 0.005 A | 1048576 bit | PARALLEL | COMMON | STANDARD SRAM | 4.5 V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr Part No R1RW0416DSB-2PI | Renesas Electronics Corporation | Datasheet | - | - | Min: 1 Mult: 1 | YES | 44 | 12 ns | RENESAS ELECTRONICS CORP | 2 | 262144 words | 256000 | 85 °C | -40 °C | PLASTIC/EPOXY | SOP | SOP, TSOP44,.46,32 | TSOP44,.46,32 | RECTANGULAR | SMALL OUTLINE | Active | TSOP2 | Yes | 3.3 V | Yes | EAR99 | 8542.32.00.41 | DUAL | GULL WING | 1 | 0.8 mm | compliant | 44 | R-PDSO-G44 | Not Qualified | 3.6 V | INDUSTRIAL | 3 V | ASYNCHRONOUS | 0.13 mA | 256KX16 | 3-STATE | 1.2 mm | 16 | 0.005 A | 4194304 bit | PARALLEL | COMMON | STANDARD SRAM | 3 V | 18.41 mm | 10.16 mm | |||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No UPD431231LGF-A8 | Renesas Electronics Corporation | Datasheet | - | - | Min: 1 Mult: 1 | YES | 100 | 8 ns | 66 MHz | RENESAS ELECTRONICS CORP | 32768 words | 32000 | 70 °C | PLASTIC/EPOXY | QFP | QFP100,.63X.87 | RECTANGULAR | FLATPACK | Obsolete | No | e0 | 3A991.B.2.B | Tin/Lead (Sn/Pb) | 8542.32.00.41 | QUAD | GULL WING | 0.635 mm | unknown | R-PQFP-G100 | Not Qualified | COMMERCIAL | SYNCHRONOUS | 0.13 mA | 32KX32 | 3-STATE | 32 | 0.001 A | 1048576 bit | PARALLEL | COMMON | STANDARD SRAM | 3.1 V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No M5M465165DJ-6 | Mitsubishi Electric | Datasheet | - | - | Min: 1 Mult: 1 | YES | 50 | 60 ns | MITSUBISHI ELECTRIC CORP | 4194304 words | 4000000 | 70 °C | PLASTIC/EPOXY | SOJ | SOJ, SOJ50,.44,32 | SOJ50,.44,32 | RECTANGULAR | SMALL OUTLINE | Obsolete | SOJ | No | 3.3 V | e0 | EAR99 | Tin/Lead (Sn/Pb) | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | 8542.32.00.02 | DUAL | J BEND | 1 | 0.8 mm | unknown | 50 | R-PDSO-J50 | Not Qualified | 3.6 V | COMMERCIAL | 3 V | 1 | ASYNCHRONOUS | 0.13 mA | 4MX16 | 3-STATE | 3.55 mm | 16 | 0.0005 A | 67108864 bit | COMMON | EDO DRAM | 4096 | FAST PAGE WITH EDO | NO | 20.95 mm | 10.16 mm | |||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr Part No R1RP0404DGE-2PR | Renesas Electronics Corporation | Datasheet | - | - | Min: 1 Mult: 1 | YES | 32 | 12 ns | RENESAS ELECTRONICS CORP | 2 | 1048576 words | 1000000 | 70 °C | PLASTIC/EPOXY | SOJ | SOJ, SOJ32,.44 | SOJ32,.44 | RECTANGULAR | SMALL OUTLINE | Obsolete | SOJ | Yes | 5 V | Yes | 3A991.B.2.A | 8542.32.00.41 | DUAL | J BEND | 1 | 1.27 mm | compliant | 32 | R-PDSO-J32 | Not Qualified | 5.5 V | COMMERCIAL | 4.5 V | ASYNCHRONOUS | 0.13 mA | 1MX4 | 3-STATE | 3.55 mm | 4 | 0.005 A | 4194304 bit | PARALLEL | COMMON | STANDARD SRAM | 4.5 V | 20.95 mm | 10.16 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr Part No K4F151611D-TL60 | Samsung Semiconductor | Datasheet | - | - | Min: 1 Mult: 1 | YES | 44 | 60 ns | SAMSUNG SEMICONDUCTOR INC | 1048576 words | 1000000 | 70 °C | PLASTIC/EPOXY | TSOP2 | TSOP2, TSOP44/50,.46,32 | TSOP44/50,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | TSOP2 | No | 5 V | e0 | EAR99 | TIN LEAD | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH | 8542.32.00.02 | DUAL | GULL WING | 1 | 0.8 mm | unknown | 50 | R-PDSO-G44 | Not Qualified | 5.5 V | COMMERCIAL | 4.5 V | 1 | ASYNCHRONOUS | 0.13 mA | 1MX16 | 3-STATE | 1.2 mm | 16 | 0.0002 A | 16777216 bit | COMMON | FAST PAGE DRAM | 1024 | FAST PAGE | YES | 20.95 mm | 10.16 mm | |||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr Part No IS45R16160D-75CTNA2 | Integrated Silicon Solution Inc | Datasheet | - | - | Min: 1 Mult: 1 | YES | 54 | 5.4 ns | 133 MHz | INTEGRATED SILICON SOLUTION INC | 16777216 words | 16000000 | 105 °C | -40 °C | PLASTIC/EPOXY | TSOP2 | TSOP2, TSOP54,.46,32 | TSOP54,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | TSOP2 | Yes | 2.5 V | e4 | Yes | EAR99 | NICKEL PALLADIUM GOLD | AUTO/SELF REFRESH | 8542.32.00.24 | DUAL | GULL WING | 1 | 0.8 mm | compliant | 54 | R-PDSO-G54 | Not Qualified | 2.7 V | INDUSTRIAL | 2.3 V | 1 | SYNCHRONOUS | 0.13 mA | 16MX16 | 3-STATE | 1.2 mm | 16 | 0.003 A | 268435456 bit | COMMON | SYNCHRONOUS DRAM | 8192 | 1,2,4,8,FP | 1,2,4,8 | FOUR BANK PAGE BURST | YES | 22.22 mm | 10.16 mm | ||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No CY7C1041V33-25ZC | Cypress Semiconductor | Datasheet | - | - | Min: 1 Mult: 1 | YES | 44 | 25 ns | CYPRESS SEMICONDUCTOR CORP | 3 | 262144 words | 256000 | 70 °C | PLASTIC/EPOXY | SOP | TSOP2-44 | TSOP44,.46,32 | RECTANGULAR | SMALL OUTLINE | Obsolete | TSOP2 | No | 3.3 V | e0 | No | 3A991.B.2.A | TIN LEAD | AUTOMATIC POWER DOWN | 8542.32.00.41 | DUAL | GULL WING | 1 | 0.8 mm | compliant | 44 | R-PDSO-G44 | Not Qualified | 3.6 V | COMMERCIAL | 3 V | ASYNCHRONOUS | 0.13 mA | 256KX16 | 3-STATE | 16 | 0.008 A | 4194304 bit | PARALLEL | COMMON | STANDARD SRAM | 3 V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No MCM6264NJ20 | Freescale Semiconductor | Datasheet | - | - | Min: 1 Mult: 1 | YES | 28 | 20 ns | MOTOROLA SEMICONDUCTOR PRODUCTS | 8192 words | 8000 | 70 °C | PLASTIC/EPOXY | SOJ | SOJ, SOJ28,.34 | SOJ28,.34 | RECTANGULAR | SMALL OUTLINE | Obsolete | No | 5 V | e0 | Tin/Lead (Sn/Pb) | DUAL | J BEND | 1.27 mm | unknown | R-PDSO-J28 | Not Qualified | 5 V | COMMERCIAL | ASYNCHRONOUS | 0.13 mA | 8KX8 | 3-STATE | 8 | 0.02 A | 65536 bit | PARALLEL | COMMON | STANDARD SRAM | 4.5 V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr Part No MSM518126-45JS | LAPIS Semiconductor Co Ltd | Datasheet | - | - | Min: 1 Mult: 1 | YES | 24 | 45 ns | LAPIS SEMICONDUCTOR CO LTD | 131072 words | 128000 | 70 °C | PLASTIC/EPOXY | SOJ | SOJ, SOJ24/26,.34 | SOJ24/26,.34 | RECTANGULAR | SMALL OUTLINE | Obsolete | SOJ | No | 5 V | e0 | EAR99 | TIN LEAD | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | 8542.32.00.02 | DUAL | J BEND | 1 | 1.27 mm | unknown | 24 | R-PDSO-J24 | Not Qualified | 5.25 V | COMMERCIAL | 4.75 V | 1 | ASYNCHRONOUS | 0.13 mA | 128KX8 | 3-STATE | 3.55 mm | 8 | 0.001 A | 1048576 bit | COMMON | FAST PAGE DRAM | 256 | FAST PAGE | 17.15 mm | 7.62 mm | ||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No MT5C2568C-20/883C | Micron Technology Inc | Datasheet | - | - | Min: 1 Mult: 1 | NO | 28 | 20 ns | MICRON TECHNOLOGY INC | 32768 words | 32000 | 125 °C | -55 °C | CERAMIC | DIP | DIP28,.3 | RECTANGULAR | IN-LINE | Obsolete | No | 5 V | e0 | 3A001.A.2.C | Tin/Lead (Sn/Pb) | 8542.32.00.41 | DUAL | THROUGH-HOLE | 2.54 mm | not_compliant | R-XDIP-T28 | Not Qualified | MILITARY | ASYNCHRONOUS | 0.13 mA | 32KX8 | 3-STATE | 8 | 0.01 A | 262144 bit | 38535Q/M;38534H;883B | PARALLEL | COMMON | STANDARD SRAM | 4.5 V |
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IS42S16800D-7TL
ISSI
Package:Memory
Price: please inquire
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K4S561632H-UC75
Samsung
Package:Memory
Price: please inquire
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MT5C1008CW-25/IT
Micross
Package:Memory
Price: please inquire
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MT5C1008CW-25L/IT
Micross
Package:Memory
Price: please inquire
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IS42S32400D-7TL
ISSI
Package:Memory
Price: please inquire
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AS7C32096A-15TC
Alliance Memory
Package:Memory
Price: please inquire
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CY7C1021BNL-15ZSXA
Infineon
Package:Memory
Price: please inquire
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A43L2616BV-6F
AMIC Technology
Package:Memory
Price: please inquire
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MCM6226BWJ15
Motorola Semiconductor Products
Package:Memory
Price: please inquire
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MCM6226BWJ15
Freescale Semiconductor
Package:Memory
Price: please inquire
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R1RW0416DSB-2PI
Renesas Electronics Corporation
Package:Memory
Price: please inquire
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UPD431231LGF-A8
Renesas Electronics Corporation
Package:Memory
Price: please inquire
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M5M465165DJ-6
Mitsubishi Electric
Package:Memory
Price: please inquire
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R1RP0404DGE-2PR
Renesas Electronics Corporation
Package:Memory
Price: please inquire
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K4F151611D-TL60
Samsung Semiconductor
Package:Memory
Price: please inquire
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IS45R16160D-75CTNA2
Integrated Silicon Solution Inc
Package:Memory
Price: please inquire
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CY7C1041V33-25ZC
Cypress Semiconductor
Package:Memory
Price: please inquire
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MCM6264NJ20
Freescale Semiconductor
Package:Memory
Price: please inquire
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MSM518126-45JS
LAPIS Semiconductor Co Ltd
Package:Memory
Price: please inquire
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MT5C2568C-20/883C
Micron Technology Inc
Package:Memory
Price: please inquire