The category is 'Memory'
Memory (52)
- All Manufacturers
- Access Time-Max
- I/O Type
- Ihs Manufacturer
- JESD-30 Code
- Memory Density
- Memory IC Type
- Memory Width
- Number of Terminals
- Number of Words
- Number of Words Code
- Output Characteristics
- Supply Current-Max
- Supply Current-Max:
0.13 mA
Image | Part Number | Manufacturer | Datasheet | Availability | Pricing(USD) | Quantity | RoHS | Surface Mount | Number of Terminals | Access Time-Max | Clock Frequency-Max (fCLK) | Ihs Manufacturer | Manufacturer | Manufacturer Part Number | Mfr | Moisture Sensitivity Levels | Number of Words | Number of Words Code | Operating Temperature-Max | Operating Temperature-Min | Package | Package Body Material | Package Code | Package Description | Package Equivalence Code | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Product Status | Reflow Temperature-Max (s) | Risk Rank | Rohs Code | Supply Voltage-Nom (Vsup) | Series | JESD-609 Code | Pbfree Code | ECCN Code | Terminal Finish | Additional Feature | HTS Code | Subcategory | Technology | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Terminal Pitch | Reach Compliance Code | Time@Peak Reflow Temperature-Max (s) | Pin Count | JESD-30 Code | Qualification Status | Supply Voltage-Max (Vsup) | Power Supplies | Temperature Grade | Supply Voltage-Min (Vsup) | Number of Ports | Operating Mode | Supply Current-Max | Organization | Output Characteristics | Seated Height-Max | Memory Width | Standby Current-Max | Memory Density | Screening Level | Parallel/Serial | I/O Type | Memory IC Type | Programming Voltage | Standby Voltage-Min | Alternate Memory Width | Output Enable | Refresh Cycles | Sequential Burst Length | Interleaved Burst Length | Access Mode | Total Dose | Self Refresh | Length | Width |
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![]() | Mfr Part No IDT71V321S25TF | Renesas | Datasheet | - | - | Min: 1 Mult: 1 | YES | 64 | 25 ns | INTEGRATED DEVICE TECHNOLOGY INC | Integrated Device Technology Inc | IDT71V321S25TF | 3 | 2048 words | 2000 | 70 °C | PLASTIC/EPOXY | LFQFP | STQFP-64 | QFP64,.47SQ,20 | SQUARE | FLATPACK, LOW PROFILE, FINE PITCH | Obsolete | QFP | 20 | 5.15 | No | 3.3 V | e0 | No | EAR99 | Tin/Lead (Sn85Pb15) | BATTERY BACKUP;AUTOMATIC POWER DOWN | 8542.32.00.41 | SRAMs | CMOS | QUAD | GULL WING | 240 | 1 | 0.5 mm | not_compliant | 64 | S-PQFP-G64 | Not Qualified | 3.6 V | 3.3 V | COMMERCIAL | 3 V | 2 | ASYNCHRONOUS | 0.13 mA | 2KX8 | 3-STATE | 1.6 mm | 8 | 0.005 A | 16384 bit | PARALLEL | COMMON | DUAL-PORT SRAM | 3 V | 10 mm | 10 mm | ||||||||||||||||||
![]() | Mfr Part No IDT71V124SA12YG | Renesas | Datasheet | - | - | Min: 1 Mult: 1 | YES | 32 | 12 ns | INTEGRATED DEVICE TECHNOLOGY INC | Integrated Device Technology Inc | IDT71V124SA12YG | PEI-Genesis | 3 | 131072 words | 128000 | 70 °C | Bulk | PLASTIC/EPOXY | SOJ | SOJ, SOJ32,.44 | SOJ32,.44 | RECTANGULAR | SMALL OUTLINE | Active | SOJ | Active | 30 | 1.9 | Yes | 3.3 V | * | e3 | Yes | 3A991.B.2.A | Matte Tin (Sn) - annealed | 8542.32.00.41 | SRAMs | CMOS | DUAL | J BEND | 260 | 1 | 1.27 mm | compliant | 32 | R-PDSO-J32 | Not Qualified | 3.6 V | 3.3 V | COMMERCIAL | 3.15 V | ASYNCHRONOUS | 0.13 mA | 128KX8 | 3-STATE | 3.683 mm | 8 | 0.01 A | 1048576 bit | PARALLEL | COMMON | STANDARD SRAM | 3 V | 20.955 mm | 10.16 mm | ||||||||||||||||
![]() | Mfr Part No A43L2616BV-6UF | AMIC Technology | Datasheet | - | - | Min: 1 Mult: 1 | YES | 54 | 5 ns | 166 MHz | AMIC TECHNOLOGY CORP | Crouse-Hinds Industrial Products | W16R D03050 | 4194304 words | 4000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TSOP2 | ROHS COMPLIANT, TSOP2-54 | TSOP54,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Contact Manufacturer | TSOP2 | NOT SPECIFIED | 5.72 | Yes | 3.3 V | Yes | EAR99 | AUTO/SELF REFRESH | 8542.32.00.02 | DRAMs | CMOS | DUAL | GULL WING | NOT SPECIFIED | 1 | 0.8 mm | unknown | 54 | R-PDSO-G54 | Not Qualified | 3.6 V | 3.3 V | INDUSTRIAL | 3 V | 1 | SYNCHRONOUS | 0.13 mA | 4MX16 | 3-STATE | 1.2 mm | 16 | 0.002 A | 67108864 bit | COMMON | SYNCHRONOUS DRAM | 4096 | 1,2,4,8,FP | 1,2,4,8 | FOUR BANK PAGE BURST | Yes | 22.22 mm | 10.16 mm | ||||||||||||||||
![]() | Mfr Part No AS7C32098A-15TC | Alliance Memory | Datasheet | - | - | Min: 1 Mult: 1 | YES | 44 | 15 ns | ALLIANCE MEMORY INC | ABB | ACH550-VCR-031A-2+F267+K451+L511 | 131072 words | 128000 | 70 °C | PLASTIC/EPOXY | TSOP2 | TSOP2, TSOP44,.46,32 | TSOP44,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | TSOP2 | 30 | 5.49 | No | 3.3 V | e0 | No | 3A991.B.2.A | TIN LEAD | 8542.32.00.41 | SRAMs | CMOS | DUAL | GULL WING | 240 | 1 | 0.8 mm | compliant | 44 | R-PDSO-G44 | Not Qualified | 3.6 V | 3.3 V | COMMERCIAL | 3 V | ASYNCHRONOUS | 0.13 mA | 128KX16 | 3-STATE | 1.2 mm | 16 | 0.008 A | 2097152 bit | PARALLEL | COMMON | STANDARD SRAM | 3 V | 18.415 mm | 10.16 mm | |||||||||||||||||||||
![]() | Mfr Part No M10B11664A-35J | Elite Semiconductor Memory Technology Inc | Datasheet | - | - | Min: 1 Mult: 1 | YES | 40 | 35 ns | ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC | 65536 words | 64000 | 70 °C | PLASTIC/EPOXY | SOJ | SOJ, SOJ40,.44 | SOJ40,.44 | RECTANGULAR | SMALL OUTLINE | Obsolete | 5 V | EAR99 | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | 8542.32.00.02 | DUAL | J BEND | 1 | 1.27 mm | unknown | R-PDSO-J40 | Not Qualified | 5.5 V | COMMERCIAL | 4.5 V | 1 | ASYNCHRONOUS | 0.13 mA | 64KX16 | 3-STATE | 3.76 mm | 16 | 0.002 A | 1048576 bit | COMMON | FAST PAGE DRAM | 256 | FAST PAGE | NO | 26.04 mm | 10.16 mm | ||||||||||||||||||||||||||||||||
![]() | Mfr Part No PDM41256LA15SO | Paradigm Technology Inc | Datasheet | - | - | Min: 1 Mult: 1 | YES | 28 | 15 ns | PARADIGM TECHNOLOGY INC | 32768 words | 32000 | 70 °C | PLASTIC/EPOXY | SOJ | SOJ, SOJ28,.34 | SOJ28,.34 | RECTANGULAR | SMALL OUTLINE | Transferred | No | 5 V | e0 | EAR99 | Tin/Lead (Sn/Pb) | 8542.32.00.41 | DUAL | J BEND | 1 | 1.27 mm | unknown | R-PDSO-J28 | Not Qualified | 5.5 V | COMMERCIAL | 4.5 V | 1 | ASYNCHRONOUS | 0.13 mA | 32KX8 | 3-STATE | 8 | 0.0005 A | 262144 bit | PARALLEL | COMMON | STANDARD SRAM | 2 V | YES | |||||||||||||||||||||||||||||||||
![]() | Mfr Part No M5M465805ATP-5 | Mitsubishi Electric | Datasheet | - | - | Min: 1 Mult: 1 | YES | 32 | 50 ns | MITSUBISHI ELECTRIC CORP | 8388608 words | 8000000 | 70 °C | PLASTIC/EPOXY | TSOP2 | TSOP2, TSOP32,.46 | TSOP32,.46 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | TSOP2 | No | 3.3 V | e0 | No | EAR99 | TIN LEAD | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | 8542.32.00.02 | DUAL | GULL WING | 1 | 1.27 mm | unknown | 32 | R-PDSO-G32 | Not Qualified | 3.6 V | COMMERCIAL | 3 V | 1 | ASYNCHRONOUS | 0.13 mA | 8MX8 | 3-STATE | 1.2 mm | 8 | 0.0005 A | 67108864 bit | COMMON | EDO DRAM | 4096 | FAST PAGE WITH EDO | NO | 20.95 mm | 10.16 mm | ||||||||||||||||||||||||||
![]() | Mfr Part No IS42S81600F-5TL | Integrated Silicon Solution Inc | Datasheet | - | - | Min: 1 Mult: 1 | YES | 54 | 5 ns | 200 MHz | INTEGRATED SILICON SOLUTION INC | 16777216 words | 16000000 | 70 °C | PLASTIC/EPOXY | TSOP2 | TSOP2, TSOP54,.46,32 | TSOP54,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | TSOP2 | Yes | 3.3 V | EAR99 | AUTO/SELF REFRESH | 8542.32.00.02 | DUAL | GULL WING | 1 | 0.8 mm | compliant | 54 | R-PDSO-G54 | Not Qualified | 3.6 V | COMMERCIAL | 3 V | 1 | SYNCHRONOUS | 0.13 mA | 16MX8 | 3-STATE | 1.2 mm | 8 | 0.002 A | 134217728 bit | COMMON | SYNCHRONOUS DRAM | 4096 | 1,2,4,8,FP | 1,2,4,8 | FOUR BANK PAGE BURST | YES | 22.22 mm | 10.16 mm | ||||||||||||||||||||||||||
![]() | Mfr Part No HM624100HCLJP-12 | Renesas Electronics Corporation | Datasheet | - | - | Min: 1 Mult: 1 | YES | 32 | 12 ns | RENESAS TECHNOLOGY CORP | 1048576 words | 1000000 | 70 °C | PLASTIC/EPOXY | SOJ | SOJ, SOJ32,.44 | SOJ32,.44 | RECTANGULAR | SMALL OUTLINE | Obsolete | SOJ | 5 V | 3A991.B.2.A | 8542.32.00.41 | DUAL | J BEND | 1 | 1.27 mm | unknown | 32 | R-PDSO-J32 | Not Qualified | 5.5 V | COMMERCIAL | 4.5 V | ASYNCHRONOUS | 0.13 mA | 1MX4 | 3-STATE | 3.76 mm | 4 | 4194304 bit | PARALLEL | COMMON | STANDARD SRAM | 2 V | 20.71 mm | 10.16 mm | ||||||||||||||||||||||||||||||||||
![]() | Mfr Part No 5962H9215305Q9C | Honeywell Microelectronics & Precision Sensors | Datasheet | - | - | Min: 1 Mult: 1 | YES | 28 | 60 ns | HONEYWELL MICROELECTRONICS AND PRECISION SENSORS | 32768 words | 32000 | 125 °C | -55 °C | UNSPECIFIED | DFP | DFP, FL28,.5 | FL28,.5 | RECTANGULAR | FLATPACK | Obsolete | 5 V | e4 | 3A001.A.1.A | GOLD | 8542.32.00.41 | DUAL | FLAT | 1 | 1.27 mm | unknown | R-XDFP-F28 | Not Qualified | 5.5 V | MILITARY | 4.5 V | 1 | ASYNCHRONOUS | 0.13 mA | 32KX8 | 3-STATE | 3.81 mm | 8 | 0.0004 A | 262144 bit | MIL-PRF-38535 Class Q | PARALLEL | COMMON | STANDARD SRAM | 2.5 V | YES | 1M Rad(Si) V | 18.285 mm | 13.465 mm | ||||||||||||||||||||||||||||
![]() | Mfr Part No MCM6265NJ20 | Motorola Mobility LLC | Datasheet | - | - | Min: 1 Mult: 1 | YES | 28 | 20 ns | MOTOROLA INC | 8192 words | 8000 | 70 °C | PLASTIC/EPOXY | SOJ | SOJ, SOJ28,.34 | SOJ28,.34 | RECTANGULAR | SMALL OUTLINE | Obsolete | SOJ | No | 5 V | e0 | No | EAR99 | TIN LEAD | 8542.32.00.41 | DUAL | J BEND | 1 | 1.27 mm | unknown | 28 | R-PDSO-J28 | Not Qualified | 5.5 V | COMMERCIAL | 4.5 V | 1 | ASYNCHRONOUS | 0.13 mA | 8KX9 | 3-STATE | 3.75 mm | 9 | 0.02 A | 73728 bit | PARALLEL | COMMON | STANDARD SRAM | 4.5 V | YES | 18.415 mm | 7.62 mm | |||||||||||||||||||||||||||
![]() | Mfr Part No MCM6265NJ20 | Freescale Semiconductor | Datasheet | - | - | Min: 1 Mult: 1 | YES | 28 | 20 ns | MOTOROLA SEMICONDUCTOR PRODUCTS | 8192 words | 8000 | 70 °C | PLASTIC/EPOXY | SOJ | SOJ, SOJ28,.34 | SOJ28,.34 | RECTANGULAR | SMALL OUTLINE | Obsolete | No | 5 V | e0 | Tin/Lead (Sn/Pb) | DUAL | J BEND | 1.27 mm | unknown | R-PDSO-J28 | Not Qualified | 5 V | COMMERCIAL | ASYNCHRONOUS | 0.13 mA | 8KX9 | 3-STATE | 9 | 0.02 A | 73728 bit | PARALLEL | COMMON | STANDARD SRAM | 4.5 V | |||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No IS42S81600F-5TLI | Integrated Silicon Solution Inc | Datasheet | - | - | Min: 1 Mult: 1 | YES | 54 | 5 ns | 200 MHz | INTEGRATED SILICON SOLUTION INC | 16777216 words | 16000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TSOP2 | TSOP2, TSOP54,.46,32 | TSOP54,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | TSOP2 | Yes | 3.3 V | EAR99 | AUTO/SELF REFRESH | 8542.32.00.02 | DUAL | GULL WING | 1 | 0.8 mm | compliant | 54 | R-PDSO-G54 | Not Qualified | 3.6 V | INDUSTRIAL | 3 V | 1 | SYNCHRONOUS | 0.13 mA | 16MX8 | 3-STATE | 1.2 mm | 8 | 0.002 A | 134217728 bit | COMMON | SYNCHRONOUS DRAM | 4096 | 1,2,4,8,FP | 1,2,4,8 | FOUR BANK PAGE BURST | YES | 22.22 mm | 10.16 mm | |||||||||||||||||||||||||
![]() | Mfr Part No CY7C274-55QMB | Cypress Semiconductor | Datasheet | - | - | Min: 1 Mult: 1 | YES | 32 | 55 ns | CYPRESS SEMICONDUCTOR CORP | 32768 words | 32000 | 125 °C | -55 °C | CERAMIC, METAL-SEALED COFIRED | WQCCN | WINDOWED, LCC-32 | LCC32,.45X.55 | RECTANGULAR | CHIP CARRIER, WINDOW | Obsolete | QFJ | No | 5 V | e0 | 3A001.A.2.C | TIN LEAD | POWER SWITCHED PROM | 8542.32.00.61 | QUAD | NO LEAD | 1 | 1.27 mm | not_compliant | 32 | R-CQCC-N32 | Not Qualified | 5.5 V | MILITARY | 4.5 V | ASYNCHRONOUS | 0.13 mA | 32KX8 | 3-STATE | 3.048 mm | 8 | 0.04 A | 262144 bit | 38535Q/M;38534H;883B | PARALLEL | COMMON | UVPROM | 12.5 V | 13.97 mm | 11.43 mm | |||||||||||||||||||||||||||
![]() | Mfr Part No MCM6264NJ20 | Motorola Semiconductor Products | Datasheet | - | - | Min: 1 Mult: 1 | YES | 28 | 20 ns | MOTOROLA INC | 8192 words | 8000 | 70 °C | PLASTIC/EPOXY | SOJ | SOJ, SOJ28,.34 | SOJ28,.34 | RECTANGULAR | SMALL OUTLINE | Obsolete | No | 5 V | e0 | EAR99 | TIN LEAD | 8542.32.00.41 | DUAL | J BEND | 1 | 1.27 mm | unknown | R-PDSO-J28 | Not Qualified | 5.5 V | COMMERCIAL | 4.5 V | 1 | ASYNCHRONOUS | 0.13 mA | 8KX8 | 3-STATE | 3.75 mm | 8 | 0.02 A | 65536 bit | PARALLEL | COMMON | STANDARD SRAM | 4.5 V | YES | 18.415 mm | 7.62 mm | ||||||||||||||||||||||||||||||
![]() | Mfr Part No K4S641632N-LC50 | Samsung Semiconductor | Datasheet | - | - | Min: 1 Mult: 1 | YES | 54 | 4.5 ns | 200 MHz | SAMSUNG SEMICONDUCTOR INC | 4194304 words | 4000000 | 70 °C | PLASTIC/EPOXY | TSOP | TSOP, TSOP54,.46,32 | TSOP54,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | Yes | 3.3 V | EAR99 | 8542.32.00.02 | DUAL | GULL WING | 0.8 mm | unknown | R-PDSO-G54 | Not Qualified | COMMERCIAL | 0.13 mA | 4MX16 | 3-STATE | 16 | 0.002 A | 67108864 bit | COMMON | SYNCHRONOUS DRAM | 4096 | 1,2,4,8,FP | 1,2,4,8 | |||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No P4C169-20PC | Pyramid Semiconductor Corporation | Datasheet | - | - | Min: 1 Mult: 1 | NO | 20 | 20 ns | PYRAMID SEMICONDUCTOR CORP | 4096 words | 4000 | 70 °C | PLASTIC/EPOXY | DIP | 0.300 INCH, PLASTIC, DIP-20 | DIP20,.3 | RECTANGULAR | IN-LINE | Active | DIP | No | 5 V | e0 | No | EAR99 | TIN LEAD | FAST CHIP SELECT CONTROL | 8542.32.00.41 | DUAL | THROUGH-HOLE | 1 | 2.54 mm | compliant | 20 | R-PDIP-T20 | Not Qualified | 5.5 V | COMMERCIAL | 4.5 V | ASYNCHRONOUS | 0.13 mA | 4KX4 | 3-STATE | 5.08 mm | 4 | 16384 bit | PARALLEL | COMMON | STANDARD SRAM | 4.5 V | 25.908 mm | 7.62 mm | |||||||||||||||||||||||||||||
![]() | Mfr Part No M5M416165CTP-6 | Mitsubishi Electric | Datasheet | - | - | Min: 1 Mult: 1 | YES | 44 | 60 ns | MITSUBISHI ELECTRIC CORP | 1048576 words | 1000000 | 70 °C | PLASTIC/EPOXY | TSOP2 | TSOP2, TSOP44/50,.46,32 | TSOP44/50,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | TSOP2 | No | 5 V | e0 | No | EAR99 | TIN LEAD | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | 8542.32.00.02 | DUAL | GULL WING | 1 | 0.8 mm | unknown | 50 | R-PDSO-G44 | Not Qualified | 5.5 V | COMMERCIAL | 4.5 V | 1 | ASYNCHRONOUS | 0.13 mA | 1MX16 | 3-STATE | 1.2 mm | 16 | 0.001 A | 16777216 bit | COMMON | EDO DRAM | 8 | 4096 | FAST PAGE WITH EDO | NO | 20.95 mm | 10.16 mm | |||||||||||||||||||||||||
![]() | Mfr Part No KM416V1204CJ-6 | Samsung Semiconductor | Datasheet | - | - | Min: 1 Mult: 1 | YES | 42 | 60 ns | SAMSUNG SEMICONDUCTOR INC | 1048576 words | 1000000 | 70 °C | PLASTIC/EPOXY | SOJ | SOJ, SOJ42,.44 | SOJ42,.44 | RECTANGULAR | SMALL OUTLINE | Obsolete | SOJ | No | 3.3 V | e0 | EAR99 | Tin/Lead (Sn/Pb) | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | 8542.32.00.02 | DUAL | J BEND | 1 | 1.27 mm | unknown | 42 | R-PDSO-J42 | Not Qualified | 3.6 V | COMMERCIAL | 3 V | 1 | ASYNCHRONOUS | 0.13 mA | 1MX16 | 3-STATE | 3.76 mm | 16 | 0.0005 A | 16777216 bit | COMMON | EDO DRAM | 1024 | FAST PAGE WITH EDO | NO | 27.31 mm | 10.16 mm | |||||||||||||||||||||||||||
![]() | Mfr Part No IDT7165L35J | Integrated Device Technology Inc | Datasheet | - | - | Min: 1 Mult: 1 | YES | 32 | 35 ns | INTEGRATED DEVICE TECHNOLOGY INC | 1 | 8192 words | 8000 | 70 °C | PLASTIC/EPOXY | QCCJ | PLASTIC, LCC-32 | LDCC32,.5X.6 | RECTANGULAR | CHIP CARRIER | Obsolete | QFJ | No | 5 V | e0 | EAR99 | TIN LEAD | 8542.32.00.41 | QUAD | J BEND | 225 | 1 | 1.27 mm | not_compliant | 20 | 32 | R-PQCC-J32 | Not Qualified | 5.5 V | COMMERCIAL | 4.5 V | 1 | ASYNCHRONOUS | 0.13 mA | 8KX8 | 3-STATE | 3.55 mm | 8 | 0.00006 A | 65536 bit | PARALLEL | COMMON | STANDARD SRAM | 2 V | YES | 13.97 mm | 11.43 mm |
IDT71V321S25TF
Renesas
Package:Memory
Price: please inquire
IDT71V124SA12YG
Renesas
Package:Memory
Price: please inquire
A43L2616BV-6UF
AMIC Technology
Package:Memory
Price: please inquire
AS7C32098A-15TC
Alliance Memory
Package:Memory
Price: please inquire
M10B11664A-35J
Elite Semiconductor Memory Technology Inc
Package:Memory
Price: please inquire
PDM41256LA15SO
Paradigm Technology Inc
Package:Memory
Price: please inquire
M5M465805ATP-5
Mitsubishi Electric
Package:Memory
Price: please inquire
IS42S81600F-5TL
Integrated Silicon Solution Inc
Package:Memory
Price: please inquire
HM624100HCLJP-12
Renesas Electronics Corporation
Package:Memory
Price: please inquire
5962H9215305Q9C
Honeywell Microelectronics & Precision Sensors
Package:Memory
Price: please inquire
MCM6265NJ20
Motorola Mobility LLC
Package:Memory
Price: please inquire
MCM6265NJ20
Freescale Semiconductor
Package:Memory
Price: please inquire
IS42S81600F-5TLI
Integrated Silicon Solution Inc
Package:Memory
Price: please inquire
CY7C274-55QMB
Cypress Semiconductor
Package:Memory
Price: please inquire
MCM6264NJ20
Motorola Semiconductor Products
Package:Memory
Price: please inquire
K4S641632N-LC50
Samsung Semiconductor
Package:Memory
Price: please inquire
P4C169-20PC
Pyramid Semiconductor Corporation
Package:Memory
Price: please inquire
M5M416165CTP-6
Mitsubishi Electric
Package:Memory
Price: please inquire
KM416V1204CJ-6
Samsung Semiconductor
Package:Memory
Price: please inquire
IDT7165L35J
Integrated Device Technology Inc
Package:Memory
Price: please inquire
