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The category is 'Memory'

Memory (52)

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Access Time-Max
I/O Type
Ihs Manufacturer
JESD-30 Code
Memory Density
Memory IC Type
Memory Width
Number of Terminals
Number of Words
Number of Words Code
Output Characteristics
Supply Current-Max

Supply Current-Max:
0.13 mA

Image	Part Number	Manufacturer	Datasheet	Availability	Pricing(USD)	Quantity	RoHS	Factory Lead Time	Mount	Surface Mount	Number of Pins	Number of Terminals	Access Time-Max	Clock Frequency-Max (fCLK)	Ihs Manufacturer	Manufacturer	Manufacturer Part Number	Maximum Operating Supply Voltage	Minimum Operating Supply Voltage	Moisture Sensitivity Levels	Mounting	Number of I/O Lines	Number of Words	Number of Words Code	Operating Temperature-Max	Operating Temperature-Min	Package Body Material	Package Code	Package Description	Package Equivalence Code	Package Shape	Package Style	Part Life Cycle Code	Part Package Code	Reflow Temperature-Max (s)	Risk Rank	RoHS	Rohs Code	Supplier Package	Supply Voltage-Nom (Vsup)	Timing Type	Typical Operating Supply Voltage	Usage Level	Operating Temperature	JESD-609 Code	Pbfree Code	ECCN Code	Terminal Finish	Max Operating Temperature	Min Operating Temperature	Additional Feature	HTS Code	Subcategory	Technology	Terminal Position	Terminal Form	Peak Reflow Temperature (Cel)	Number of Functions	Terminal Pitch	Reach Compliance Code	Pin Count	JESD-30 Code	Qualification Status	Operating Supply Voltage	Supply Voltage-Max (Vsup)	Power Supplies	Temperature Grade	Supply Voltage-Min (Vsup)	Max Supply Voltage	Min Supply Voltage	Number of Ports	Nominal Supply Current	Operating Mode	Supply Current-Max	Data Bus Width	Organization	Output Characteristics	Seated Height-Max	Memory Width	Address Bus Width	Density	Standby Current-Max	Memory Density	Max Frequency	Screening Level	Parallel/Serial	I/O Type	Memory IC Type	Standby Voltage-Min	Output Enable	Refresh Cycles	Sequential Burst Length	Interleaved Burst Length	Access Mode	Self Refresh	Length	Width	Radiation Hardening	Lead Free
	Mfr Part No M5M465805ATP-5	Mitsubishi Electric	Datasheet	-	-	Min: 1 Mult: 1				YES		32	50 ns		MITSUBISHI ELECTRIC CORP								8388608 words	8000000	70 °C		PLASTIC/EPOXY	TSOP2	TSOP2, TSOP32,.46	TSOP32,.46	RECTANGULAR	SMALL OUTLINE, THIN PROFILE	Obsolete	TSOP2				No		3.3 V					e0	No	EAR99	TIN LEAD			RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	8542.32.00.02			DUAL	GULL WING		1	1.27 mm	unknown	32	R-PDSO-G32	Not Qualified		3.6 V		COMMERCIAL	3 V			1		ASYNCHRONOUS	0.13 mA		8MX8	3-STATE	1.2 mm	8			0.0005 A	67108864 bit				COMMON	EDO DRAM			4096			FAST PAGE WITH EDO	NO	20.95 mm	10.16 mm
	Mfr Part No M10B11664A-35J	Elite Semiconductor Memory Technology Inc	Datasheet	-	-	Min: 1 Mult: 1				YES		40	35 ns		ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC								65536 words	64000	70 °C		PLASTIC/EPOXY	SOJ	SOJ, SOJ40,.44	SOJ40,.44	RECTANGULAR	SMALL OUTLINE	Obsolete							5 V							EAR99				RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	8542.32.00.02			DUAL	J BEND		1	1.27 mm	unknown		R-PDSO-J40	Not Qualified		5.5 V		COMMERCIAL	4.5 V			1		ASYNCHRONOUS	0.13 mA		64KX16	3-STATE	3.76 mm	16			0.002 A	1048576 bit				COMMON	FAST PAGE DRAM			256			FAST PAGE	NO	26.04 mm	10.16 mm
	Mfr Part No PDM41256LA15SO	Paradigm Technology Inc	Datasheet	-	-	Min: 1 Mult: 1				YES		28	15 ns		PARADIGM TECHNOLOGY INC								32768 words	32000	70 °C		PLASTIC/EPOXY	SOJ	SOJ, SOJ28,.34	SOJ28,.34	RECTANGULAR	SMALL OUTLINE	Transferred					No		5 V					e0		EAR99	Tin/Lead (Sn/Pb)				8542.32.00.41			DUAL	J BEND		1	1.27 mm	unknown		R-PDSO-J28	Not Qualified		5.5 V		COMMERCIAL	4.5 V			1		ASYNCHRONOUS	0.13 mA		32KX8	3-STATE		8			0.0005 A	262144 bit			PARALLEL	COMMON	STANDARD SRAM	2 V	YES
	Mfr Part No HM624100HCLJP-12	Renesas Electronics Corporation	Datasheet	-	-	Min: 1 Mult: 1				YES		32	12 ns		RENESAS TECHNOLOGY CORP								1048576 words	1000000	70 °C		PLASTIC/EPOXY	SOJ	SOJ, SOJ32,.44	SOJ32,.44	RECTANGULAR	SMALL OUTLINE	Obsolete	SOJ						5 V							3A991.B.2.A					8542.32.00.41			DUAL	J BEND		1	1.27 mm	unknown	32	R-PDSO-J32	Not Qualified		5.5 V		COMMERCIAL	4.5 V					ASYNCHRONOUS	0.13 mA		1MX4	3-STATE	3.76 mm	4				4194304 bit			PARALLEL	COMMON	STANDARD SRAM	2 V							20.71 mm	10.16 mm
	Mfr Part No P4C169-20PC	Pyramid Semiconductor Corporation	Datasheet	-	-	Min: 1 Mult: 1				NO		20	20 ns		PYRAMID SEMICONDUCTOR CORP								4096 words	4000	70 °C		PLASTIC/EPOXY	DIP	0.300 INCH, PLASTIC, DIP-20	DIP20,.3	RECTANGULAR	IN-LINE	Active	DIP				No		5 V					e0	No	EAR99	TIN LEAD			FAST CHIP SELECT CONTROL	8542.32.00.41			DUAL	THROUGH-HOLE		1	2.54 mm	compliant	20	R-PDIP-T20	Not Qualified		5.5 V		COMMERCIAL	4.5 V					ASYNCHRONOUS	0.13 mA		4KX4	3-STATE	5.08 mm	4				16384 bit			PARALLEL	COMMON	STANDARD SRAM	4.5 V							25.908 mm	7.62 mm
	Mfr Part No MT48LC8M16LFB4-75M:G	Micron	Datasheet	-	-	Min: 1 Mult: 1			Surface Mount	YES	54	54	5.4 ns	133 MHz	MICRON TECHNOLOGY INC	Micron Technology Inc	MT48LC8M16LFB4-75M:G						8388608 words	8000000	70 °C		PLASTIC/EPOXY	VFBGA	VFBGA, BGA54,9X9,32	BGA54,9X9,32	SQUARE	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	Obsolete	BGA	30	5.79	Compliant	Yes		3.3 V					e1		EAR99	Tin/Silver/Copper (Sn/Ag/Cu)	70 °C	0 °C	AUTO/SELF REFRESH	8542.32.00.02	DRAMs	CMOS	BOTTOM	BALL	260	1	0.8 mm	compliant	54	S-PBGA-B54	Not Qualified	3.3 V	3.6 V	3.3 V	COMMERCIAL	3 V	3.6 V	3 V	1	115 mA	SYNCHRONOUS	0.13 mA	16 b	8MX16	3-STATE	1 mm	16	14 b	128 Mb	0.00045 A	134217728 bit	133 MHz			COMMON	SYNCHRONOUS DRAM			4096	1,2,4,8,FP	1,2,4,8	FOUR BANK PAGE BURST	YES	8 mm	8 mm		Lead Free
	Mfr Part No GS71116AGP-8IT	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		6 Weeks		YES		44	8 ns		GSI TECHNOLOGY	GSI Technology	GS71116AGP-8IT	3.6 V	3 V	3	Surface Mount	16 Bit	64 kWords	64000	85 °C	-40 °C	PLASTIC/EPOXY	TSOP2	TSOP2, TSOP44,.46,32	TSOP44,.46,32	RECTANGULAR	SMALL OUTLINE, THIN PROFILE	Active	TSOP2	NOT SPECIFIED	5.46		Yes	TSOP-II	3.3 V	Asynchronous	3.3000 V	Industrial grade	-40 to 85 °C	e3	Yes	3A991.B.2.B	PURE MATTE TIN				8542.32.00.41	SRAMs	CMOS	DUAL	GULL WING	260	1	0.8 mm	compliant	44	R-PDSO-G44	Not Qualified		3.6 V	3.3 V	INDUSTRIAL	3 V			1		ASYNCHRONOUS	0.13 mA		64KX16	3-STATE	1.2 mm	16	16 Bit	1 Mbit	0.005 A	1048576 bit		Industrial	PARALLEL	COMMON	STANDARD SRAM	3 V							18.41 mm	10.16 mm
	Mfr Part No MT48V8M16LFB4-8AT:G	Micron	Datasheet	-	-	Min: 1 Mult: 1				YES		54	7 ns	125 MHz	MICRON TECHNOLOGY INC	Micron Technology Inc	MT48V8M16LFB4-8AT:G						8388608 words	8000000	105 °C	-40 °C	PLASTIC/EPOXY	VFBGA	VFBGA, BGA54,9X9,32	BGA54,9X9,32	SQUARE	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	Obsolete	BGA	30	5.79	Compliant	Yes		2.5 V					e1		EAR99	Tin/Silver/Copper (Sn/Ag/Cu)			AUTO/SELF REFRESH	8542.32.00.02	DRAMs	CMOS	BOTTOM	BALL	260	1	0.8 mm	compliant	54	S-PBGA-B54	Not Qualified	2.5 V	2.7 V	1.8/2.5,2.5 V	INDUSTRIAL	2.3 V			1		SYNCHRONOUS	0.13 mA		8MX16	3-STATE	1 mm	16			0.00045 A	134217728 bit				COMMON	SYNCHRONOUS DRAM			4096	1,2,4,8,FP	1,2,4,8	FOUR BANK PAGE BURST	YES	8 mm	8 mm		Lead Free
	Mfr Part No K4B1G0846G-BCH9000	Samsung	Datasheet	-	-	Min: 1 Mult: 1				YES		78	0.255 ns	667 MHz	SAMSUNG SEMICONDUCTOR INC	Samsung Semiconductor	K4B1G0846G-BCH9000						134217728 words	128000000			PLASTIC/EPOXY	FBGA	FBGA, BGA78,9X13,32	BGA78,9X13,32	RECTANGULAR	GRID ARRAY, FINE PITCH	Obsolete			5.84		Yes		1.5 V													DRAMs	CMOS	BOTTOM	BALL			0.8 mm	compliant		R-PBGA-B78	Not Qualified			1.5 V								0.13 mA		128MX8	3-STATE		8				1073741824 bit				COMMON	DDR DRAM			8192	4,8	4,8
	Mfr Part No MT5C1008ECA-25L/IT	Micross	Datasheet	-	-	Min: 1 Mult: 1				YES		32	25 ns		MICROSS COMPONENTS	Micross Components	MT5C1008ECA-25L/IT						131072 words	128000	85 °C	-40 °C	CERAMIC, METAL-SEALED COFIRED	QCCN	QCCN, LCC32,.45X.55	LCC32,.45X.55	RECTANGULAR	CHIP CARRIER	End Of Life	QFJ	NOT SPECIFIED	5	Compliant	No		5 V					e0	No	EAR99	Tin/Lead (Sn/Pb)	85 °C	-40 °C	TTL COMPATIBLE INPUTS/OUTPUTS, 2V DATA RETENTION, BATTERY BACKUP, LOW POWER STANDBY	8542.32.00.41	SRAMs	CMOS	QUAD	NO LEAD	NOT SPECIFIED	1	1.27 mm	compliant	32	R-CQCC-N32	Not Qualified	5 V	5.5 V	5 V	INDUSTRIAL	4.5 V			1		ASYNCHRONOUS	0.13 mA		128KX8	3-STATE	3.048 mm	8	17 b	1 Mb	0.001 A	1048576 bit			PARALLEL	COMMON	STANDARD SRAM	2 V							13.97 mm	11.43 mm	No
	Mfr Part No MT5C1008F-25/IT	Micross	Datasheet	-	-	Min: 1 Mult: 1				YES	32	32	25 ns		MICROSS COMPONENTS	Micross Components	MT5C1008F-25/IT						131072 words	128000	85 °C	-40 °C	CERAMIC, METAL-SEALED COFIRED	SOF	FLATPACK-32	FL32,.4	RECTANGULAR	SMALL OUTLINE	End Of Life	DFP	NOT SPECIFIED	5.02	Compliant	No		5 V					e0	No	EAR99	Tin/Lead (Sn/Pb)	85 °C	-40 °C	TTL COMPATIBLE INPUTS/OUTPUTS, 2V DATA RETENTION, BATTERY BACKUP, LOW POWER STANDBY	8542.32.00.41	SRAMs	CMOS	DUAL	FLAT	NOT SPECIFIED	1	1.27 mm	compliant	32	R-CDSO-F32	Not Qualified	5 V	5.5 V	5 V	INDUSTRIAL	4.5 V			1		ASYNCHRONOUS	0.13 mA		128KX8	3-STATE	3.175 mm	8	17 b	1 Mb	0.01 A	1048576 bit			PARALLEL	COMMON	STANDARD SRAM	4.5 V								10.414 mm	No
	Mfr Part No MT5C1008F-25L/IT	Micross	Datasheet	-	-	Min: 1 Mult: 1				YES	32	32	25 ns		MICROSS COMPONENTS	Micross Components	MT5C1008F-25L/IT						131072 words	128000	85 °C	-40 °C	CERAMIC, METAL-SEALED COFIRED	SOF	FLATPACK-32	FL32,.4	RECTANGULAR	SMALL OUTLINE	End Of Life	DFP	NOT SPECIFIED	5.02	Compliant	No		5 V					e0	No	EAR99	Tin/Lead (Sn/Pb)	85 °C	-40 °C	TTL COMPATIBLE INPUTS/OUTPUTS, 2V DATA RETENTION, BATTERY BACKUP, LOW POWER STANDBY	8542.32.00.41	SRAMs	CMOS	DUAL	FLAT	NOT SPECIFIED	1	1.27 mm	compliant	32	R-CDSO-F32	Not Qualified	5 V	5.5 V	5 V	INDUSTRIAL	4.5 V			1		ASYNCHRONOUS	0.13 mA		128KX8	3-STATE	3.175 mm	8	17 b	1 Mb	0.001 A	1048576 bit			PARALLEL	COMMON	STANDARD SRAM	2 V								10.414 mm	No

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