The category is 'Memory'
Memory (72)
- All Manufacturers
- Access Time-Max
- Ihs Manufacturer
- JESD-30 Code
- Memory IC Type
- Memory Width
- Number of Terminals
- Number of Words
- Number of Words Code
- Operating Temperature-Max
- Organization
- Package Code
- Supply Current-Max
- Supply Current-Max:
0.14 mA
Image | Part Number | Manufacturer | Datasheet | Availability | Pricing(USD) | Quantity | RoHS | Lifecycle Status | Mount | Surface Mount | Number of Pins | Number of Terminals | Access Time-Max | Clock Frequency-Max (fCLK) | Ihs Manufacturer | Manufacturer | Manufacturer Part Number | Moisture Sensitivity Levels | Number of Words | Number of Words Code | Operating Temperature-Max | Operating Temperature-Min | Package Body Material | Package Code | Package Description | Package Equivalence Code | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Reflow Temperature-Max (s) | Risk Rank | RoHS | Rohs Code | Supply Voltage-Nom (Vsup) | Voltage Rating (DC) | JESD-609 Code | Pbfree Code | ECCN Code | Terminal Finish | Max Operating Temperature | Min Operating Temperature | Additional Feature | HTS Code | Subcategory | Technology | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Terminal Pitch | Reach Compliance Code | Frequency | Time@Peak Reflow Temperature-Max (s) | Pin Count | JESD-30 Code | Qualification Status | Operating Supply Voltage | Supply Voltage-Max (Vsup) | Power Supplies | Temperature Grade | Supply Voltage-Min (Vsup) | Voltage | Max Supply Voltage | Min Supply Voltage | Number of Ports | Nominal Supply Current | Operating Mode | Supply Current-Max | Organization | Output Characteristics | Seated Height-Max | Memory Width | Address Bus Width | Density | Standby Current-Max | Memory Density | Max Frequency | Screening Level | Parallel/Serial | I/O Type | Memory IC Type | Standby Voltage-Min | Data Polling | Toggle Bit | Command User Interface | Output Enable | Page Size | Cycle Time | Refresh Cycles | Sequential Burst Length | Interleaved Burst Length | Clock Rate | Access Mode | Nominal Supply Voltage (DC) | Self Refresh | Length | Width | Lead Free |
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 | Mfr Part No X2816BP-45 | Xicor Inc | Datasheet | - | - | Min: 1 Mult: 1 | NO | 24 | 450 ns | XICOR INC | 2048 words | 2000 | 70 °C | PLASTIC/EPOXY | DIP | DIP24,.6 | RECTANGULAR | IN-LINE | Obsolete | No | 5 V | e0 | EAR99 | Tin/Lead (Sn/Pb) | 8542.32.00.51 | DUAL | THROUGH-HOLE | 2.54 mm | unknown | R-PDIP-T24 | Not Qualified | COMMERCIAL | 0.14 mA | 2KX8 | 8 | 0.07 A | 16384 bit | PARALLEL | EEPROM | YES | NO | NO | 16 words | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No X2816BJ-20 | Xicor Inc | Datasheet | - | - | Min: 1 Mult: 1 | YES | 32 | 200 ns | XICOR INC | 2048 words | 2000 | 70 °C | PLASTIC/EPOXY | QCCJ | LDCC32,.5X.6 | RECTANGULAR | CHIP CARRIER | Obsolete | No | 5 V | e0 | EAR99 | Tin/Lead (Sn/Pb) | 8542.32.00.51 | QUAD | J BEND | 1.27 mm | unknown | R-PQCC-J32 | Not Qualified | COMMERCIAL | 0.14 mA | 2KX8 | 8 | 0.07 A | 16384 bit | PARALLEL | EEPROM | YES | NO | NO | 16 words | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No X2816BDI-35 | Xicor Inc | Datasheet | - | - | Min: 1 Mult: 1 | NO | 24 | 350 ns | XICOR INC | 2048 words | 2000 | 85 °C | -40 °C | CERAMIC | DIP | DIP24,.6 | RECTANGULAR | IN-LINE | Obsolete | No | 5 V | e0 | EAR99 | Tin/Lead (Sn/Pb) | 8542.32.00.51 | DUAL | THROUGH-HOLE | 2.54 mm | unknown | R-XDIP-T24 | Not Qualified | INDUSTRIAL | 0.14 mA | 2KX8 | 8 | 0.07 A | 16384 bit | PARALLEL | EEPROM | YES | NO | NO | 16 words | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No T431616B-10C | TM Technology Inc | Datasheet | - | - | Min: 1 Mult: 1 | YES | 60 | 7 ns | 100 MHz | TM TECHNOLOGY INC | 1048576 words | 1000000 | 85 °C | -10 °C | PLASTIC/EPOXY | VFBGA | VFBGA, BGA60,7X15,25 | BGA60,7X15,25 | RECTANGULAR | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | Contact Manufacturer | 3.3 V | EAR99 | AUTO/SELF REFRESH | 8542.32.00.02 | BOTTOM | BALL | 1 | 0.65 mm | unknown | R-PBGA-B60 | Not Qualified | 3.6 V | OTHER | 2.7 V | 1 | SYNCHRONOUS | 0.14 mA | 1MX16 | 3-STATE | 1 mm | 16 | 0.002 A | 16777216 bit | COMMON | SYNCHRONOUS DRAM | 2048 | 1,2,4,8,FP | 1,2,4,8 | DUAL BANK PAGE BURST | YES | 10.1 mm | 6.4 mm | |||||||||||||||||||||||||||||||||||||||||||||
 | Mfr Part No AS7C1024A-20JI | Alliance Semiconductor Corporation | Datasheet | - | - | Min: 1 Mult: 1 | YES | 32 | 20 ns | ALLIANCE SEMICONDUCTOR CORP | 131072 words | 128000 | 85 °C | -40 °C | PLASTIC/EPOXY | SOJ | SOJ, SOJ32,.44 | SOJ32,.44 | RECTANGULAR | SMALL OUTLINE | Obsolete | SOJ | No | 5 V | e0 | 3A991.B.2.B | TIN LEAD | 8542.32.00.41 | DUAL | J BEND | 225 | 1 | 1.27 mm | unknown | 32 | R-PDSO-J32 | Not Qualified | 5.5 V | INDUSTRIAL | 4.5 V | ASYNCHRONOUS | 0.14 mA | 128KX8 | 3-STATE | 3.683 mm | 8 | 0.01 A | 1048576 bit | PARALLEL | COMMON | STANDARD SRAM | 4.5 V | 20.955 mm | 10.16 mm | |||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No MD51V65805E-50TA | LAPIS Semiconductor Co Ltd | Datasheet | - | - | Min: 1 Mult: 1 | YES | 32 | 50 ns | LAPIS SEMICONDUCTOR CO LTD | 8388608 words | 8000000 | 70 °C | PLASTIC/EPOXY | TSOP | TSOP, TSOP32,.46 | TSOP32,.46 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | 3.3 V | EAR99 | 8542.32.00.02 | DUAL | GULL WING | 1.27 mm | unknown | R-PDSO-G32 | Not Qualified | COMMERCIAL | 0.14 mA | 8MX8 | 3-STATE | 8 | 0.0005 A | 67108864 bit | COMMON | FAST PAGE DRAM | 4096 | NO | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No MT5C1601-20 | Micron Technology Inc | Datasheet | - | - | Min: 1 Mult: 1 | NO | 20 | 20 ns | MICRON TECHNOLOGY INC | 16384 words | 16000 | 70 °C | PLASTIC/EPOXY | DIP | DIP20,.3 | RECTANGULAR | IN-LINE | Obsolete | No | 5 V | e0 | EAR99 | Tin/Lead (Sn/Pb) | 8542.32.00.41 | DUAL | THROUGH-HOLE | 2.54 mm | not_compliant | R-PDIP-T20 | Not Qualified | COMMERCIAL | ASYNCHRONOUS | 0.14 mA | 16KX1 | 3-STATE | 1 | 0.003 A | 16384 bit | PARALLEL | SEPARATE | STANDARD SRAM | 4.5 V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr Part No K4S641632E-TC70 | Samsung Semiconductor | Datasheet | - | - | Min: 1 Mult: 1 | YES | 54 | 6 ns | 143 MHz | SAMSUNG SEMICONDUCTOR INC | 4194304 words | 4000000 | 70 °C | PLASTIC/EPOXY | TSOP2 | TSOP2, TSOP54,.46,32 | TSOP54,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | TSOP2 | No | 3.3 V | e0 | EAR99 | TIN LEAD | AUTO/SELF REFRESH | 8542.32.00.02 | DUAL | GULL WING | 1 | 0.8 mm | unknown | 54 | R-PDSO-G54 | Not Qualified | 3.6 V | COMMERCIAL | 3 V | 1 | SYNCHRONOUS | 0.14 mA | 4MX16 | 3-STATE | 1.2 mm | 16 | 0.001 A | 67108864 bit | COMMON | SYNCHRONOUS DRAM | 4096 | 1,2,4,8,FP | 1,2,4,8 | FOUR BANK PAGE BURST | YES | 22.22 mm | 10.16 mm | |||||||||||||||||||||||||||||||||||||||||
 | Mfr Part No IDT7130LA55PFI | Integrated Device Technology Inc | Datasheet | - | - | Min: 1 Mult: 1 | YES | 64 | 55 ns | INTEGRATED DEVICE TECHNOLOGY INC | 3 | 1024 words | 1000 | 85 °C | -40 °C | PLASTIC/EPOXY | LQFP | TQFP-64 | QFP64,.66SQ,32 | SQUARE | FLATPACK, LOW PROFILE | Obsolete | QFP | No | 5 V | e0 | No | EAR99 | TIN LEAD | 8542.32.00.41 | QUAD | GULL WING | 240 | 1 | 0.8 mm | not_compliant | 30 | 64 | S-PQFP-G64 | Not Qualified | 5.5 V | INDUSTRIAL | 4.5 V | 2 | ASYNCHRONOUS | 0.14 mA | 1KX8 | 3-STATE | 1.6 mm | 8 | 0.004 A | 8192 bit | PARALLEL | COMMON | MULTI-PORT SRAM | 2 V | 14 mm | 14 mm | |||||||||||||||||||||||||||||||||||||||||
| Mfr Part No MT5C1009EC-25/883C | Micron Technology Inc | Datasheet | - | - | Min: 1 Mult: 1 | YES | 32 | 25 ns | MICRON TECHNOLOGY INC | 131072 words | 128000 | 125 °C | -55 °C | CERAMIC | SON | SOLCC32,.4 | RECTANGULAR | SMALL OUTLINE | Obsolete | No | 5 V | 3A001.A.2.C | 8542.32.00.41 | DUAL | NO LEAD | 1.27 mm | unknown | R-XDSO-N32 | Not Qualified | MILITARY | ASYNCHRONOUS | 0.14 mA | 128KX8 | 3-STATE | 8 | 0.01 A | 1048576 bit | 38535Q/M;38534H;883B | PARALLEL | COMMON | STANDARD SRAM | 4.5 V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr Part No IDT6116LA15Y | Integrated Device Technology Inc | Datasheet | - | - | Min: 1 Mult: 1 | YES | 24 | 15 ns | INTEGRATED DEVICE TECHNOLOGY INC | 3 | 2048 words | 2000 | 70 °C | PLASTIC/EPOXY | SOJ | 0.300 INCH, 1.27 MM PITCH, SOJ-24 | SOJ24,.34 | RECTANGULAR | SMALL OUTLINE | Obsolete | SOJ | No | 5 V | e0 | EAR99 | TIN LEAD | 8542.32.00.41 | DUAL | J BEND | 225 | 1 | 1.27 mm | not_compliant | 30 | 24 | R-PDSO-J24 | Not Qualified | 5.5 V | COMMERCIAL | 4.5 V | 1 | ASYNCHRONOUS | 0.14 mA | 2KX8 | 3-STATE | 3.76 mm | 8 | 0.00002 A | 16384 bit | PARALLEL | COMMON | STANDARD SRAM | 2 V | YES | 15.88 mm | 7.62 mm | ||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No MT46H16M32LFCM-6 | Micron Technology | Datasheet | - | - | Min: 1 Mult: 1 | Obsolete (Last Updated: 2 years ago) | Surface Mount | YES | 90 | 90 | 5.5 ns | 166 MHz | MICRON TECHNOLOGY INC | Micron Technology Inc | MT46H16M32LFCM-6 | 16777216 words | 16000000 | 70 °C | PLASTIC/EPOXY | VFBGA | VFBGA, BGA90,9X15,32 | BGA90,9X15,32 | RECTANGULAR | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | Obsolete | BGA | 30 | 5.62 | Compliant | Yes | 1.8 V | 1.8 V | e1 | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | 70 °C | 0 °C | AUTO/SELF REFRESH | 8542.32.00.28 | DRAMs | CMOS | BOTTOM | BALL | 260 | 1 | 0.8 mm | compliant | 167 MHz | 90 | R-PBGA-B90 | Not Qualified | 1.8 V | 1.95 V | 1.8 V | COMMERCIAL | 1.7 V | 1.8 V | 1.95 V | 1.7 V | 1 | 115 mA | SYNCHRONOUS | 0.14 mA | 16MX32 | 3-STATE | 1 mm | 32 | 15 b | 512 Mb | 0.00001 A | 536870912 bit | 166 MHz | COMMON | DDR DRAM | 6 ns | 8192 | 2,4,8 | 2,4,8 | 167 MHz | FOUR BANK PAGE BURST | 1.8 V | YES | 13 mm | 10 mm | Lead Free | |||||||||||||
| Mfr Part No IS64WV20488BLL-10TA3 | Integrated Silicon Solution Inc | Datasheet | - | - | Min: 1 Mult: 1 | YES | 44 | 10 ns | INTEGRATED SILICON SOLUTION INC | 3 | 2097152 words | 2000000 | 125 °C | -40 °C | PLASTIC/EPOXY | TSOP2 | 0.400 INCH, TSOP2-44 | TSOP44,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | TSOP2 | No | 3 V | e0 | No | 3A991.B.2.A | TIN LEAD | 8542.32.00.41 | DUAL | GULL WING | 1 | 0.8 mm | compliant | 44 | R-PDSO-G44 | Not Qualified | 3.6 V | AUTOMOTIVE | 2.4 V | ASYNCHRONOUS | 0.14 mA | 2MX8 | 3-STATE | 1.2 mm | 8 | 0.06 A | 16777216 bit | AEC-Q100 | PARALLEL | COMMON | STANDARD SRAM | 1.2 V | 18.41 mm | 10.16 mm | |||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No KM48V8004AK-6 | Samsung Semiconductor | Datasheet | - | - | Min: 1 Mult: 1 | YES | 32 | 60 ns | SAMSUNG SEMICONDUCTOR INC | 8388608 words | 8000000 | 70 °C | PLASTIC/EPOXY | SOJ | SOJ, SOJ32,.44 | SOJ32,.44 | RECTANGULAR | SMALL OUTLINE | Obsolete | SOJ | No | 3.3 V | e0 | No | EAR99 | TIN LEAD | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | 8542.32.00.02 | DUAL | J BEND | 1 | 1.27 mm | unknown | 32 | R-PDSO-J32 | Not Qualified | 3.6 V | COMMERCIAL | 3 V | 1 | ASYNCHRONOUS | 0.14 mA | 8MX8 | 3-STATE | 3.76 mm | 8 | 0.0005 A | 67108864 bit | COMMON | EDO DRAM | 8192 | FAST PAGE WITH EDO | NO | 20.96 mm | 10.16 mm | |||||||||||||||||||||||||||||||||||||||||||
 | Mfr Part No IS45VM32400E-75BLA1 | Integrated Silicon Solution Inc | Datasheet | - | - | Min: 1 Mult: 1 | YES | 90 | 5.4 ns | 133 MHz | INTEGRATED SILICON SOLUTION INC | 4194304 words | 4000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TFBGA | TFBGA, BGA90,9X15,32 | BGA90,9X15,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Active | DSBGA | Yes | 1.8 V | EAR99 | AUTO/SELF REFRESH | 8542.32.00.02 | BOTTOM | BALL | 1 | 0.8 mm | compliant | 90 | R-PBGA-B90 | Not Qualified | 1.95 V | INDUSTRIAL | 1.7 V | 1 | SYNCHRONOUS | 0.14 mA | 4MX32 | 3-STATE | 1.2 mm | 32 | 0.000015 A | 134217728 bit | AEC-Q100 | COMMON | SYNCHRONOUS DRAM | 4096 | 1,2,4,8,FP | 1,2,4,8 | FOUR BANK PAGE BURST | YES | 13 mm | 8 mm | |||||||||||||||||||||||||||||||||||||||||
| Mfr Part No SN54S301J | Texas Instruments | Datasheet | - | - | Min: 1 Mult: 1 | NO | 16 | 85 ns | TEXAS INSTRUMENTS INC | 256 words | 256 | 125 °C | -55 °C | CERAMIC | DIP | DIP, DIP16,.3 | DIP16,.3 | RECTANGULAR | IN-LINE | Obsolete | No | 5 V | 3A001.A.2.C | 8542.32.00.41 | DUAL | THROUGH-HOLE | NOT SPECIFIED | 2.54 mm | not_compliant | NOT SPECIFIED | R-XDIP-T16 | Not Qualified | MILITARY | ASYNCHRONOUS | 0.14 mA | 256X1 | OPEN-COLLECTOR | 1 | PARALLEL | STANDARD SRAM | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No UPD431001LE-20 | Renesas Electronics Corporation | Datasheet | - | - | Min: 1 Mult: 1 | YES | 28 | 20 ns | RENESAS ELECTRONICS CORP | 1048576 words | 1000000 | 70 °C | PLASTIC/EPOXY | SOJ | SOJ28,.44 | RECTANGULAR | SMALL OUTLINE | Obsolete | SOJ | No | 5 V | e0 | No | 3A991.B.2.B | Tin/Lead (Sn/Pb) | 8542.32.00.41 | DUAL | J BEND | 1.27 mm | unknown | 28 | R-PDSO-J28 | Not Qualified | COMMERCIAL | ASYNCHRONOUS | 0.14 mA | 1MX1 | 3-STATE | 1 | 0.002 A | 1048576 bit | PARALLEL | COMMON | STANDARD SRAM | 4.5 V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr Part No M12L16161A-7T | Elite Semiconductor Memory Technology Inc | Datasheet | - | - | Min: 1 Mult: 1 | YES | 50 | 6 ns | 143 MHz | ELITE SEMICONDUCTOR MICROELECTRONICS TECHNOLOGYINC | 1048576 words | 1000000 | 70 °C | PLASTIC/EPOXY | TSOP2 | 0.400 X 0.825 INCH, 0.80 MM PITCH, TSOP2-50 | TSOP50,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | TSOP2 | 3.3 V | EAR99 | AUTO/SELF REFRESH | 8542.32.00.02 | DUAL | GULL WING | 1 | 0.8 mm | unknown | 50 | R-PDSO-G50 | Not Qualified | 3.6 V | COMMERCIAL | 3 V | 1 | SYNCHRONOUS | 0.14 mA | 1MX16 | 3-STATE | 1.2 mm | 16 | 0.002 A | 16777216 bit | COMMON | SYNCHRONOUS DRAM | 2048 | 1,2,4,8,FP | 1,2,4,8 | DUAL BANK PAGE BURST | YES | 20.95 mm | 10.16 mm | ||||||||||||||||||||||||||||||||||||||||||||
 | Mfr Part No IDT7198S35DB | Integrated Device Technology Inc | Datasheet | - | - | Min: 1 Mult: 1 | NO | 24 | 35 ns | INTEGRATED DEVICE TECHNOLOGY INC | 16384 words | 16000 | 125 °C | -55 °C | CERAMIC, GLASS-SEALED | DIP | 0.300 INCH, CERDIP-24 | DIP24,.3 | RECTANGULAR | IN-LINE | Obsolete | DIP | No | 5 V | e0 | 3A001.A.2.C | Tin/Lead (Sn/Pb) | 8542.32.00.41 | DUAL | THROUGH-HOLE | 1 | 2.54 mm | not_compliant | 24 | R-GDIP-T24 | Not Qualified | 5.5 V | MILITARY | 4.5 V | 1 | ASYNCHRONOUS | 0.14 mA | 16KX4 | 3-STATE | 5.08 mm | 4 | 0.02 A | 65536 bit | 38535Q/M;38534H;883B | PARALLEL | COMMON | STANDARD SRAM | 4.5 V | YES | 32.004 mm | 7.62 mm | |||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No MCM6226AWJ45 | Freescale Semiconductor | Datasheet | - | - | Min: 1 Mult: 1 | YES | 32 | 45 ns | MOTOROLA SEMICONDUCTOR PRODUCTS | 131072 words | 128000 | 70 °C | PLASTIC/EPOXY | SOJ | SOJ, SOJ32,.44 | SOJ32,.44 | RECTANGULAR | SMALL OUTLINE | Obsolete | No | 5 V | e0 | Tin/Lead (Sn/Pb) | DUAL | J BEND | 1.27 mm | unknown | R-PDSO-J32 | Not Qualified | 5 V | COMMERCIAL | ASYNCHRONOUS | 0.14 mA | 128KX8 | 3-STATE | 8 | 0.015 A | 1048576 bit | PARALLEL | COMMON | STANDARD SRAM | 4.5 V |
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X2816BP-45
Xicor Inc
Package:Memory
Price: please inquire
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X2816BJ-20
Xicor Inc
Package:Memory
Price: please inquire
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X2816BDI-35
Xicor Inc
Package:Memory
Price: please inquire
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T431616B-10C
TM Technology Inc
Package:Memory
Price: please inquire
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AS7C1024A-20JI
Alliance Semiconductor Corporation
Package:Memory
Price: please inquire
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MD51V65805E-50TA
LAPIS Semiconductor Co Ltd
Package:Memory
Price: please inquire
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MT5C1601-20
Micron Technology Inc
Package:Memory
Price: please inquire
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K4S641632E-TC70
Samsung Semiconductor
Package:Memory
Price: please inquire
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IDT7130LA55PFI
Integrated Device Technology Inc
Package:Memory
Price: please inquire
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MT5C1009EC-25/883C
Micron Technology Inc
Package:Memory
Price: please inquire
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IDT6116LA15Y
Integrated Device Technology Inc
Package:Memory
Price: please inquire
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MT46H16M32LFCM-6
Micron Technology
Package:Memory
Price: please inquire
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IS64WV20488BLL-10TA3
Integrated Silicon Solution Inc
Package:Memory
Price: please inquire
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KM48V8004AK-6
Samsung Semiconductor
Package:Memory
Price: please inquire
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IS45VM32400E-75BLA1
Integrated Silicon Solution Inc
Package:Memory
Price: please inquire
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SN54S301J
Texas Instruments
Package:Memory
Price: please inquire
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UPD431001LE-20
Renesas Electronics Corporation
Package:Memory
Price: please inquire
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M12L16161A-7T
Elite Semiconductor Memory Technology Inc
Package:Memory
Price: please inquire
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IDT7198S35DB
Integrated Device Technology Inc
Package:Memory
Price: please inquire
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MCM6226AWJ45
Freescale Semiconductor
Package:Memory
Price: please inquire