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Memory (72)

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Ihs Manufacturer
JESD-30 Code
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Supply Current-Max

Supply Current-Max:
0.14 mA

Part Number	Manufacturer	Datasheet	Availability	Pricing(USD)	Quantity	Factory Lead Time	Surface Mount	Number of Pins	Number of Terminals	Access Time-Max	Clock Frequency-Max (fCLK)	Ihs Manufacturer	Manufacturer	Manufacturer Part Number	Moisture Sensitivity Levels	Number of Words	Number of Words Code	Operating Temperature-Max	Operating Temperature-Min	Package Body Material	Package Code	Package Description	Package Equivalence Code	Package Shape	Package Style	Part Life Cycle Code	Part Package Code	Reflow Temperature-Max (s)	Risk Rank	RoHS	Rohs Code	Supply Voltage-Nom (Vsup)	JESD-609 Code	Pbfree Code	ECCN Code	Terminal Finish	Max Operating Temperature	Min Operating Temperature	Additional Feature	HTS Code	Subcategory	Technology	Terminal Position	Terminal Form	Peak Reflow Temperature (Cel)	Number of Functions	Terminal Pitch	Reach Compliance Code	Time@Peak Reflow Temperature-Max (s)	Pin Count	JESD-30 Code	Qualification Status	Operating Supply Voltage	Supply Voltage-Max (Vsup)	Power Supplies	Temperature Grade	Supply Voltage-Min (Vsup)	Number of Ports	Operating Mode	Supply Current-Max	Data Bus Width	Organization	Output Characteristics	Seated Height-Max	Memory Width	Address Bus Width	Density	Standby Current-Max	Memory Density	Max Frequency	Screening Level	Parallel/Serial	I/O Type	Memory IC Type	Programming Voltage	Data Retention Time-Min	Standby Voltage-Min	Alternate Memory Width	Data Polling	Toggle Bit	Command User Interface	Output Enable	Page Size	Refresh Cycles	Sequential Burst Length	Interleaved Burst Length	Access Mode	Self Refresh	Length	Width	Radiation Hardening
Mfr Part No MCM6226AWJ45	Motorola Semiconductor Products	Datasheet	-	-	Min: 1 Mult: 1		YES		32	45 ns		MOTOROLA INC				131072 words	128000	70 °C		PLASTIC/EPOXY	SOJ	0.400 INCH, SOJ-32	SOJ32,.44	RECTANGULAR	SMALL OUTLINE	Obsolete					No	5 V	e0		EAR99	Tin/Lead (Sn/Pb)				8542.32.00.41			DUAL	J BEND		1	1.27 mm	unknown			R-PDSO-J32	Not Qualified		5.5 V		COMMERCIAL	4.5 V	1	ASYNCHRONOUS	0.14 mA		128KX8	3-STATE	3.75 mm	8			0.015 A	1048576 bit			PARALLEL	COMMON	STANDARD SRAM			4.5 V					YES							20.96 mm	10.16 mm
Mfr Part No X2816BDM	Xicor Inc	Datasheet	-	-	Min: 1 Mult: 1		NO		24	300 ns		XICOR INC				2048 words	2000	125 °C	-55 °C	CERAMIC, GLASS-SEALED	DIP	DIP, DIP24,.6	DIP24,.6	RECTANGULAR	IN-LINE	Obsolete					No	5 V	e0			TIN LEAD			16 BYTE PAGE WRITE; OVER 100 YEARS DATA RETENTION				DUAL	THROUGH-HOLE		1	2.54 mm	unknown			R-GDIP-T24	Not Qualified		5.5 V		MILITARY	4.5 V		ASYNCHRONOUS	0.14 mA		2KX8		5.72 mm	8			0.07 A	16384 bit			PARALLEL		EEPROM	5 V	100			YES	NO	NO		16 words						32.07 mm	15.24 mm
Mfr Part No MT5C1008EC-25/883C	Micron Technology Inc	Datasheet	-	-	Min: 1 Mult: 1		YES		32	25 ns		MICRON TECHNOLOGY INC				131072 words	128000	125 °C	-55 °C	CERAMIC	SON		SOLCC32,.4	RECTANGULAR	SMALL OUTLINE	Obsolete					No	5 V	e0		3A001.A.2.C	Tin/Lead (Sn/Pb)				8542.32.00.41			DUAL	NO LEAD			1.27 mm	not_compliant			R-XDSO-N32	Not Qualified				MILITARY			ASYNCHRONOUS	0.14 mA		128KX8	3-STATE		8			0.01 A	1048576 bit		38535Q/M;38534H;883B	PARALLEL	COMMON	STANDARD SRAM			4.5 V
Mfr Part No MT5C1008EC-25/883C	Micross Components	Datasheet	-	-	Min: 1 Mult: 1		YES		32	25 ns		MICROSS COMPONENTS				131072 words	128000	125 °C	-55 °C	CERAMIC, METAL-SEALED COFIRED	SON	SON, SOLCC32,.4	SOLCC32,.4	RECTANGULAR	SMALL OUTLINE	End Of Life	DLCC				No	5 V	e0	No	3A001.A.2.C	TIN LEAD			TTL COMPATIBLE INPUTS/OUTPUTS, 2V DATA RETENTION, BATTERY BACKUP, LOW POWER STANDBY	8542.32.00.41			DUAL	NO LEAD		1	1.27 mm	compliant		32	R-CDSO-N32	Not Qualified		5.5 V		MILITARY	4.5 V		ASYNCHRONOUS	0.14 mA		128KX8	3-STATE	2.54 mm	8			0.01 A	1048576 bit		MIL-STD-883 Class C	PARALLEL	COMMON	STANDARD SRAM			4.5 V												20.828 mm	10.16 mm
Mfr Part No KM416V1204AT-7	Samsung Semiconductor	Datasheet	-	-	Min: 1 Mult: 1		YES		44	70 ns		SAMSUNG SEMICONDUCTOR INC				1048576 words	1000000	70 °C		PLASTIC/EPOXY	TSOP2	TSOP2, TSOP44/50,.46,32	TSOP44/50,.46,32	RECTANGULAR	SMALL OUTLINE, THIN PROFILE	Obsolete	TSOP2				No	3.3 V	e0		EAR99	TIN LEAD			RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	8542.32.00.02			DUAL	GULL WING		1	0.8 mm	unknown		44	R-PDSO-G44	Not Qualified		3.6 V		COMMERCIAL	3 V	1	ASYNCHRONOUS	0.14 mA		1MX16	3-STATE	1.2 mm	16			0.001 A	16777216 bit				COMMON	EDO DRAM										1024			FAST PAGE WITH EDO	NO	18.41 mm	10.16 mm
Mfr Part No M12L128168A-7TG	Elite Semiconductor Memory Technology Inc	Datasheet	-	-	Min: 1 Mult: 1		YES		54	5.4 ns	143 MHz	ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC				8388608 words	8000000	70 °C		PLASTIC/EPOXY	TSOP2	TSOP2, TSOP54,.46,32	TSOP54,.46,32	RECTANGULAR	SMALL OUTLINE, THIN PROFILE	Contact Manufacturer	TSOP2				Yes	3.3 V			EAR99				AUTO/SELF REFRESH	8542.32.00.02			DUAL	GULL WING		1	0.8 mm	unknown		54	R-PDSO-G54	Not Qualified		3.6 V		COMMERCIAL	3 V	1	SYNCHRONOUS	0.14 mA		8MX16	3-STATE	1.2 mm	16			0.002 A	134217728 bit				COMMON	SYNCHRONOUS DRAM										4096	1,2,4,8,FP	1,2,4,8	FOUR BANK PAGE BURST	YES	22.22 mm	10.16 mm
Mfr Part No IS46LR32160C-5BLA1	Integrated Silicon Solution Inc	Datasheet	-	-	Min: 1 Mult: 1		YES		90	5 ns	200 MHz	INTEGRATED SILICON SOLUTION INC				16777216 words	16000000	85 °C	-40 °C	PLASTIC/EPOXY	TFBGA	TFBGA, BGA90,9X15,32	BGA90,9X15,32	RECTANGULAR	GRID ARRAY, THIN PROFILE, FINE PITCH	Active					Yes	1.8 V			EAR99				AUTO/SELF REFRESH	8542.32.00.28			BOTTOM	BALL		1	0.8 mm	compliant			R-PBGA-B90	Not Qualified		1.95 V		INDUSTRIAL	1.7 V	1	SYNCHRONOUS	0.14 mA		16MX32	3-STATE	1.2 mm	32			0.00001 A	536870912 bit		AEC-Q100		COMMON	DDR1 DRAM										8192	2,4,8,16	2,4,8,16	FOUR BANK PAGE BURST	YES	13 mm	8 mm
Mfr Part No IS45VM32400E-75BLA2	Integrated Silicon Solution Inc	Datasheet	-	-	Min: 1 Mult: 1		YES		90	5.4 ns	133 MHz	INTEGRATED SILICON SOLUTION INC				4194304 words	4000000	105 °C	-40 °C	PLASTIC/EPOXY	TFBGA	TFBGA, BGA90,9X15,32	BGA90,9X15,32	RECTANGULAR	GRID ARRAY, THIN PROFILE, FINE PITCH	Active	DSBGA				Yes	1.8 V			EAR99				AUTO/SELF REFRESH	8542.32.00.02			BOTTOM	BALL		1	0.8 mm	compliant		90	R-PBGA-B90	Not Qualified		1.95 V		INDUSTRIAL	1.7 V	1	SYNCHRONOUS	0.14 mA		4MX32	3-STATE	1.2 mm	32			0.000015 A	134217728 bit		AEC-Q100		COMMON	SYNCHRONOUS DRAM										4096	1,2,4,8,FP	1,2,4,8	FOUR BANK PAGE BURST	YES	13 mm	8 mm
Mfr Part No M5M465165ATP-5	Mitsubishi Electric	Datasheet	-	-	Min: 1 Mult: 1		YES		44	50 ns		MITSUBISHI ELECTRIC CORP				4194304 words	4000000	70 °C		PLASTIC/EPOXY	TSOP2	TSOP2, TSOP50,.46,32	TSOP50,.46,32	RECTANGULAR	SMALL OUTLINE, THIN PROFILE	Obsolete	TSOP2				No	3.3 V	e0		EAR99	TIN LEAD			RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	8542.32.00.02			DUAL	GULL WING		1	0.8 mm	unknown		50	R-PDSO-G44	Not Qualified		3.6 V		COMMERCIAL	3 V	1	ASYNCHRONOUS	0.14 mA		4MX16	3-STATE	1.2 mm	16			0.0005 A	67108864 bit				COMMON	EDO DRAM				8						4096			FAST PAGE WITH EDO	NO	20.95 mm	10.16 mm
Mfr Part No MCM6323TS15	Freescale Semiconductor	Datasheet	-	-	Min: 1 Mult: 1		YES		44	15 ns		MOTOROLA SEMICONDUCTOR PRODUCTS				65536 words	64000	70 °C		PLASTIC/EPOXY	TSOP	TSOP, TSOP44,.46,32	TSOP44,.46,32	RECTANGULAR	SMALL OUTLINE, THIN PROFILE	Obsolete					No	3.3 V	e0			Tin/Lead (Sn/Pb)							DUAL	GULL WING	NOT SPECIFIED	1	0.8 mm	unknown	NOT SPECIFIED		R-PDSO-G44	Not Qualified		3.6 V	3.3 V	COMMERCIAL	3 V	1	ASYNCHRONOUS	0.14 mA		64KX16	3-STATE	1.2 mm	16			0.005 A	1048576 bit			PARALLEL	COMMON	STANDARD SRAM			3 V					YES							18.41 mm	10.16 mm
Mfr Part No NN511662TT-50	United Microelectronics Corporation	Datasheet	-	-	Min: 1 Mult: 1		YES		40	50 ns		NIPPON STEEL SEMICONDUCTOR CORP				65536 words	64000	70 °C		PLASTIC/EPOXY	TSOP	TSOP, TSOP40/44,.46,32	TSOP40/44,.46,32	RECTANGULAR	SMALL OUTLINE	Obsolete					No	5 V	e0		EAR99	TIN LEAD			RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	8542.32.00.02			DUAL	GULL WING		1	0.8 mm	unknown			R-PDSO-G40	Not Qualified		5.5 V		COMMERCIAL	4.5 V	1	ASYNCHRONOUS	0.14 mA		64KX16	3-STATE		16			0.001 A	1048576 bit				COMMON	EDO DRAM										256			FAST PAGE WITH EDO	NO
Mfr Part No IDT7164L30L28	Integrated Device Technology Inc	Datasheet	-	-	Min: 1 Mult: 1		YES		28	29 ns		INTEGRATED DEVICE TECHNOLOGY INC				8192 words	8000	70 °C		CERAMIC, METAL-SEALED COFIRED	QCCN	LCC-28	LCC28,.45SQ	SQUARE	CHIP CARRIER	Obsolete	QLCC				No	5 V	e0	No	EAR99	TIN LEAD				8542.32.00.41			QUAD	NO LEAD		1	1.27 mm	not_compliant		28	S-CQCC-N28	Not Qualified		5.5 V		COMMERCIAL	4.5 V	1	ASYNCHRONOUS	0.14 mA		8KX8	3-STATE	2.54 mm	8			0.00006 A	65536 bit			PARALLEL	COMMON	STANDARD SRAM			2 V					YES							11.43 mm	11.43 mm
Mfr Part No IS42S16800J-6BL	Integrated Silicon Solution Inc	Datasheet	-	-	Min: 1 Mult: 1	12 Weeks	YES		54	5.4 ns	166 MHz	INTEGRATED SILICON SOLUTION INC			3	8388608 words	8000000	70 °C		PLASTIC/EPOXY	TFBGA	TFBGA-54	BGA54,9X9,32	SQUARE	GRID ARRAY, THIN PROFILE, FINE PITCH	Active					Yes	3.3 V	e1		EAR99	TIN SILVER COPPER			AUTO/SELF REFRESH	8542.32.00.02			BOTTOM	BALL		1	0.8 mm	compliant			S-PBGA-B54			3.6 V		COMMERCIAL	3 V	1	SYNCHRONOUS	0.14 mA		8MX16	3-STATE	1.2 mm	16			0.03 A	134217728 bit				COMMON	SYNCHRONOUS DRAM										4096	1,2,4,8,FP	1,2,4,8	FOUR BANK PAGE BURST	YES	8 mm	8 mm
Mfr Part No HYB39L256160AC-8	Infineon Technologies AG	Datasheet	-	-	Min: 1 Mult: 1		YES		54	6 ns	125 MHz	INFINEON TECHNOLOGIES AG				16777216 words	16000000	70 °C		PLASTIC/EPOXY	TFBGA	12 X 8 MM, 0.80 MM PITCH, PLASTIC, TFBGA-54	BGA54,9X9,32	RECTANGULAR	GRID ARRAY, THIN PROFILE, FINE PITCH	Obsolete	BGA				No	3.3 V	e0		EAR99	TIN LEAD			AUTO/SELF REFRESH	8542.32.00.24			BOTTOM	BALL		1	0.8 mm	not_compliant		54	R-PBGA-B54	Not Qualified		3.6 V		COMMERCIAL	2.7 V	1	SYNCHRONOUS	0.14 mA		16MX16	3-STATE	1.2 mm	16			0.000475 A	268435456 bit				COMMON	SYNCHRONOUS DRAM										8192	1,2,4,8,FP	1,2,4,8	FOUR BANK PAGE BURST	YES	12 mm	8 mm
Mfr Part No M628032-12PS1	STMicroelectronics	Datasheet	-	-	Min: 1 Mult: 1		NO		28	12 ns		STMICROELECTRONICS				32768 words	32000	70 °C		PLASTIC/EPOXY	DIP	0.300 INCH, SKINNY, PLASTIC, DIP-28	DIP28,.3	RECTANGULAR	IN-LINE	Obsolete	DIP				No	5 V	e0		EAR99	TIN LEAD				8542.32.00.41			DUAL	THROUGH-HOLE		1	2.54 mm	not_compliant		28	R-PDIP-T28	Not Qualified		5.5 V		COMMERCIAL	4.5 V	1	ASYNCHRONOUS	0.14 mA		32KX8	3-STATE	4.57 mm	8			0.001 A	262144 bit			PARALLEL	COMMON	STANDARD SRAM			2 V					YES							34.67 mm	7.62 mm
Mfr Part No KM48V8100AK-6	Samsung Semiconductor	Datasheet	-	-	Min: 1 Mult: 1		YES		32	60 ns		SAMSUNG SEMICONDUCTOR INC				8388608 words	8000000	70 °C		PLASTIC/EPOXY	SOJ	SOJ, SOJ32,.44	SOJ32,.44	RECTANGULAR	SMALL OUTLINE	Obsolete	SOJ				No	3.3 V	e0	No	EAR99	TIN LEAD			RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	8542.32.00.02			DUAL	J BEND		1	1.27 mm	unknown		32	R-PDSO-J32	Not Qualified		3.6 V		COMMERCIAL	3 V	1	ASYNCHRONOUS	0.14 mA		8MX8	3-STATE	3.76 mm	8			0.0005 A	67108864 bit				COMMON	FAST PAGE DRAM										4096			FAST PAGE	NO	20.96 mm	10.16 mm
Mfr Part No KM44C16104AS-6	Samsung Semiconductor	Datasheet	-	-	Min: 1 Mult: 1		YES		32	60 ns		SAMSUNG SEMICONDUCTOR INC				16777216 words	16000000	70 °C		PLASTIC/EPOXY	TSOP2	TSOP2, TSOP32,.46	TSOP32,.46	RECTANGULAR	SMALL OUTLINE, THIN PROFILE	Obsolete	TSOP2				No	5 V	e0		EAR99	TIN LEAD			RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	8542.32.00.02			DUAL	GULL WING		1	1.27 mm	unknown		32	R-PDSO-G32	Not Qualified		5.5 V		COMMERCIAL	4.5 V	1	ASYNCHRONOUS	0.14 mA		16MX4	3-STATE	1.2 mm	4			0.001 A	67108864 bit				COMMON	EDO DRAM										4096			FAST PAGE WITH EDO	NO	20.95 mm	10.16 mm
Mfr Part No TD27128	Intel Corporation	Datasheet	-	-	Min: 1 Mult: 1		NO		28	250 ns		INTEL CORP				16384 words	16000	85 °C	-40 °C	CERAMIC, GLASS-SEALED	WDIP	HERMETIC SEALED, CERAMIC, DIP-28	DIP28,.6	RECTANGULAR	IN-LINE, WINDOW	Obsolete	DIP				No	5 V	e0		EAR99	TIN LEAD				8542.32.00.61			DUAL	THROUGH-HOLE		1	2.54 mm	unknown		28	R-GDIP-T28	Not Qualified		5.25 V		INDUSTRIAL	4.75 V		ASYNCHRONOUS	0.14 mA		16KX8	3-STATE	5.08 mm	8				131072 bit			PARALLEL	COMMON	UVPROM	21 V														37.084 mm	15.24 mm
Mfr Part No PDM31532LA12TI	Paradigm Technology Inc	Datasheet	-	-	Min: 1 Mult: 1		YES		44	12 ns		PARADIGM TECHNOLOGY INC				131072 words	128000	85 °C	-40 °C	PLASTIC/EPOXY	TSOP		TSOP44,.46,32	RECTANGULAR	SMALL OUTLINE	Transferred					No	3.3 V	e0		3A991.B.2.B	Tin/Lead (Sn/Pb)				8542.32.00.41			DUAL	GULL WING		1	0.8 mm	unknown			R-PDSO-G44	Not Qualified		3.6 V		INDUSTRIAL	3 V	1	ASYNCHRONOUS	0.14 mA		128KX8	3-STATE		8			0.005 A	1048576 bit			PARALLEL	COMMON	STANDARD SRAM			3 V					YES
Mfr Part No K4X51323PE-8GC6	Samsung	Datasheet	1227 In Stock	-	Min: 1 Mult: 1		YES	90	90	5.5 ns	166 MHz	SAMSUNG SEMICONDUCTOR INC	Samsung Semiconductor	K4X51323PE-8GC6	3	16777216 words	16000000	85 °C	-25 °C	PLASTIC/EPOXY	VFBGA	VFBGA, BGA90,9X15,32	BGA90,9X15,32	RECTANGULAR	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	Obsolete		NOT SPECIFIED	5.84	Compliant	Yes	1.8 V	e1	Yes		Tin/Silver/Copper (Sn/Ag/Cu)	85 °C	-25 °C	AUTO/SELF REFRESH		DRAMs	CMOS	BOTTOM	BALL	260	1	0.8 mm	compliant			R-PBGA-B90	Not Qualified	1.8 V	1.95 V	1.8 V	OTHER	1.7 V	1	SYNCHRONOUS	0.14 mA	32 b	16MX32	3-STATE	1 mm	32	15 b	512 Mb	0.0003 A	536870912 bit	333 MHz			COMMON	DDR DRAM										8192	2,4,8,16	2,4,8,16	FOUR BANK PAGE BURST	YES	13 mm	9 mm	No

Memory (72)