The category is 'Memory'
Memory (72)
- All Manufacturers
- Access Time-Max
- Ihs Manufacturer
- JESD-30 Code
- Memory IC Type
- Memory Width
- Number of Terminals
- Number of Words
- Number of Words Code
- Operating Temperature-Max
- Organization
- Package Code
- Supply Current-Max
- Supply Current-Max:
0.14 mA
Image | Part Number | Manufacturer | Datasheet | Availability | Pricing(USD) | Quantity | RoHS | Factory Lead Time | Mount | Surface Mount | Number of Pins | Number of Terminals | Access Time-Max | Clock Frequency-Max (fCLK) | Ihs Manufacturer | Manufacturer | Manufacturer Part Number | Moisture Sensitivity Levels | Number of Words | Number of Words Code | Operating Temperature-Max | Operating Temperature-Min | Package Body Material | Package Code | Package Description | Package Equivalence Code | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Reflow Temperature-Max (s) | Risk Rank | RoHS | Rohs Code | Supply Voltage-Nom (Vsup) | JESD-609 Code | Pbfree Code | ECCN Code | Terminal Finish | Max Operating Temperature | Min Operating Temperature | Additional Feature | HTS Code | Subcategory | Technology | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Terminal Pitch | Reach Compliance Code | Pin Count | JESD-30 Code | Qualification Status | Operating Supply Voltage | Supply Voltage-Max (Vsup) | Power Supplies | Temperature Grade | Supply Voltage-Min (Vsup) | Max Supply Voltage | Min Supply Voltage | Number of Ports | Nominal Supply Current | Operating Mode | Supply Current-Max | Data Bus Width | Organization | Output Characteristics | Seated Height-Max | Memory Width | Address Bus Width | Density | Standby Current-Max | Memory Density | Max Frequency | Parallel/Serial | I/O Type | Memory IC Type | Programming Voltage | Data Retention Time-Min | Standby Voltage-Min | Data Polling | Toggle Bit | Command User Interface | Page Size | Refresh Cycles | Sequential Burst Length | Interleaved Burst Length | Access Mode | Self Refresh | Length | Width | Radiation Hardening | Lead Free |
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![]() | Mfr Part No MT46H64M16LFCK-6IT:A | Micron | Datasheet | 6841 | - | Min: 1 Mult: 1 | YES | 60 | 5.5 ns | 166 MHz | MICRON TECHNOLOGY INC | Micron Technology Inc | MT46H64M16LFCK-6IT:A | 67108864 words | 64000000 | 85 °C | -40 °C | PLASTIC/EPOXY | VFBGA | VFBGA, BGA60,9X10,32 | BGA60,9X10,32 | RECTANGULAR | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | Obsolete | BGA | 30 | 5.45 | Yes | 1.8 V | e1 | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | AUTO/SELF REFRESH | 8542.32.00.32 | DRAMs | CMOS | BOTTOM | BALL | 260 | 1 | 0.8 mm | unknown | 60 | R-PBGA-B60 | Not Qualified | 1.95 V | 1.8 V | INDUSTRIAL | 1.7 V | 1 | SYNCHRONOUS | 0.14 mA | 64MX16 | 3-STATE | 1 mm | 16 | 0.0006 A | 1073741824 bit | COMMON | DDR DRAM | 8192 | 2,4,8 | 2,4,8 | FOUR BANK PAGE BURST | YES | 11.5 mm | 10 mm | |||||||||||||||||||||||||||
![]() | Mfr Part No GS74117AX-8IT | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 6 Weeks | YES | 48 | 8 ns | GSI TECHNOLOGY | GSI Technology | GS74117AX-8IT | 3 | 262144 words | 256000 | 85 °C | -40 °C | PLASTIC/EPOXY | TFBGA | TFBGA, BGA48,6X8,30 | BGA48,6X8,30 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Active | BGA | NOT SPECIFIED | 5.23 | No | 3.3 V | No | 3A991.B.2.B | 8542.32.00.41 | SRAMs | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 0.75 mm | compliant | 48 | R-PBGA-B48 | Not Qualified | 3.6 V | 3.3 V | INDUSTRIAL | 3 V | ASYNCHRONOUS | 0.14 mA | 256KX16 | 3-STATE | 1.2 mm | 16 | 0.02 A | 4194304 bit | PARALLEL | COMMON | STANDARD SRAM | 3 V | 10 mm | 6 mm | ||||||||||||||||||||||||||||||||
![]() | Mfr Part No MT46H16M32LFCM-6:B | Micron | Datasheet | 682 | - | Min: 1 Mult: 1 | Surface Mount | YES | 90 | 90 | 6 ns | 166 MHz | MICRON TECHNOLOGY INC | Micron Technology Inc | MT46H16M32LFCM-6:B | 16777216 words | 16000000 | 70 °C | PLASTIC/EPOXY | VFBGA | VFBGA, BGA90,9X15,32 | BGA90,9X15,32 | RECTANGULAR | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | Obsolete | BGA | 30 | 5.59 | Compliant | Yes | 1.8 V | e1 | Yes | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | 70 °C | 0 °C | AUTO/SELF REFRESH | 8542.32.00.28 | DRAMs | CMOS | BOTTOM | BALL | 260 | 1 | 0.8 mm | unknown | 90 | R-PBGA-B90 | Not Qualified | 1.8 V | 1.95 V | 1.8 V | COMMERCIAL | 1.7 V | 1.95 V | 1.7 V | 1 | 115 mA | SYNCHRONOUS | 0.14 mA | 32 b | 16MX32 | 3-STATE | 1 mm | 32 | 15 b | 512 Mb | 0.00001 A | 536870912 bit | 166 MHz | COMMON | DDR DRAM | 8192 | 2,4,8 | 2,4,8 | FOUR BANK PAGE BURST | YES | 13 mm | 10 mm | No | Lead Free | ||||||||||||
![]() | Mfr Part No MT46H16M32LFCM-6IT | Micron | Datasheet | 4 | - | Min: 1 Mult: 1 | Surface Mount | YES | 90 | 90 | 5.5 ns | 166 MHz | MICRON TECHNOLOGY INC | Micron Technology Inc | MT46H16M32LFCM-6IT | 16777216 words | 16000000 | 85 °C | -40 °C | PLASTIC/EPOXY | VFBGA | VFBGA, BGA90,9X15,32 | BGA90,9X15,32 | RECTANGULAR | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | Obsolete | BGA | NOT SPECIFIED | 5.6 | Compliant | Yes | 1.8 V | e1 | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | 85 °C | -40 °C | AUTO/SELF REFRESH | 8542.32.00.28 | DRAMs | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 0.8 mm | compliant | 90 | R-PBGA-B90 | Not Qualified | 1.8 V | 1.95 V | 1.8 V | INDUSTRIAL | 1.7 V | 1.95 V | 1.7 V | 1 | 115 mA | SYNCHRONOUS | 0.14 mA | 32 b | 16MX32 | 3-STATE | 1 mm | 32 | 15 b | 512 Mb | 0.00001 A | 536870912 bit | 166 MHz | COMMON | DDR DRAM | 8192 | 2,4,8 | 2,4,8 | FOUR BANK PAGE BURST | YES | 13 mm | 10 mm | No | Lead Free | ||||||||||||
![]() | Mfr Part No MT46H64M16LFCK-75:A | Micron | Datasheet | - | - | Min: 1 Mult: 1 | YES | 60 | 6 ns | 133 MHz | MICRON TECHNOLOGY INC | Micron Technology Inc | MT46H64M16LFCK-75:A | 67108864 words | 64000000 | 70 °C | PLASTIC/EPOXY | VFBGA | VFBGA, BGA60,9X10,32 | BGA60,9X10,32 | RECTANGULAR | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | Obsolete | BGA | 30 | 5.18 | Yes | 1.8 V | e1 | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | AUTO/SELF REFRESH | 8542.32.00.32 | DRAMs | CMOS | BOTTOM | BALL | 260 | 1 | 0.8 mm | unknown | 60 | R-PBGA-B60 | Not Qualified | 1.95 V | 1.8 V | COMMERCIAL | 1.7 V | 1 | SYNCHRONOUS | 0.14 mA | 64MX16 | 3-STATE | 1 mm | 16 | 0.0006 A | 1073741824 bit | COMMON | DDR DRAM | 8192 | 2,4,8 | 2,4,8 | FOUR BANK PAGE BURST | YES | 11.5 mm | 10 mm | ||||||||||||||||||||||||||||
![]() | Mfr Part No X2816BP | Xicor | Datasheet | 54 | - | Min: 1 Mult: 1 | NO | 24 | 300 ns | XICOR INC | Xicor Inc | X2816BP | 2048 words | 2000 | 70 °C | PLASTIC/EPOXY | DIP | DIP, DIP24,.6 | DIP24,.6 | RECTANGULAR | IN-LINE | Obsolete | NOT SPECIFIED | 5.85 | No | 5 V | e0 | Tin/Lead (Sn/Pb) | 16 BYTE PAGE WRITE; OVER 100 YEARS DATA RETENTION | EEPROMs | NMOS | DUAL | THROUGH-HOLE | NOT SPECIFIED | 1 | 2.54 mm | unknown | R-PDIP-T24 | Not Qualified | 5.5 V | 5 V | COMMERCIAL | 4.5 V | ASYNCHRONOUS | 0.14 mA | 2KX8 | 3-STATE | 4.82 mm | 8 | 0.07 A | 16384 bit | PARALLEL | EEPROM | 5 V | 100 | YES | NO | NO | 16 words | 31.56 mm | 15.24 mm | |||||||||||||||||||||||||||||||||
![]() | Mfr Part No GS74116ATP-8I | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | YES | 44 | 8 ns | GSI TECHNOLOGY | GSI Technology | GS74116ATP-8I | 3 | 262144 words | 256000 | 85 °C | -40 °C | PLASTIC/EPOXY | TSOP2 | TSOP2, TSOP44,.46,32 | TSOP44,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | TSOP2 | NOT SPECIFIED | 5.32 | Non-Compliant | No | 3.3 V | e0 | No | 3A991.B.2.B | Tin/Lead (Sn/Pb) | 8542.32.00.41 | SRAMs | CMOS | DUAL | GULL WING | NOT SPECIFIED | 1 | 0.8 mm | compliant | 44 | R-PDSO-G44 | Not Qualified | 3.6 V | 3.3 V | INDUSTRIAL | 3 V | ASYNCHRONOUS | 0.14 mA | 256KX16 | 3-STATE | 1.2 mm | 16 | 0.02 A | 4194304 bit | PARALLEL | COMMON | STANDARD SRAM | 3 V | 18.41 mm | 10.16 mm | ||||||||||||||||||||||||||||||
![]() | Mfr Part No GS74116AGP-8IT | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 9 Weeks, 2 Days | YES | 44 | 8 ns | GSI TECHNOLOGY | GSI Technology | GS74116AGP-8IT | 3 | 262144 words | 256000 | 85 °C | -40 °C | PLASTIC/EPOXY | TSOP2 | TSOP2, TSOP44,.46,32 | TSOP44,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Active | TSOP2 | NOT SPECIFIED | 5.34 | Compliant | Yes | 3.3 V | e3 | Yes | 3A991.B.2.B | PURE MATTE TIN | 8542.32.00.41 | SRAMs | CMOS | DUAL | GULL WING | 260 | 1 | 0.8 mm | compliant | 44 | R-PDSO-G44 | Not Qualified | 3.6 V | 3.3 V | INDUSTRIAL | 3 V | ASYNCHRONOUS | 0.14 mA | 256KX16 | 3-STATE | 1.2 mm | 16 | 0.02 A | 4194304 bit | PARALLEL | COMMON | STANDARD SRAM | 3 V | 18.41 mm | 10.16 mm | |||||||||||||||||||||||||||||
![]() | Mfr Part No GS74116AGX-8IT | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 6 Weeks | YES | 48 | 8 ns | GSI TECHNOLOGY | GSI Technology | GS74116AGX-8IT | 3 | 262144 words | 256000 | 85 °C | -40 °C | PLASTIC/EPOXY | TFBGA | TFBGA, BGA48,6X8,30 | BGA48,6X8,30 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Active | BGA | NOT SPECIFIED | 5.2 | Yes | 3.3 V | e1 | Yes | 3A991.B.2.B | Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5) | 8542.32.00.41 | SRAMs | CMOS | BOTTOM | BALL | 260 | 1 | 0.75 mm | compliant | 48 | R-PBGA-B48 | Not Qualified | 3.6 V | 3.3 V | INDUSTRIAL | 3 V | ASYNCHRONOUS | 0.14 mA | 256KX16 | 3-STATE | 1.2 mm | 16 | 0.02 A | 4 | PARALLEL | COMMON | STANDARD SRAM | 3 V | 10 mm | 6 mm | ||||||||||||||||||||||||||||||
![]() | Mfr Part No CY7C1021BV33L-15BAC | Cypress Semiconductor | Datasheet | - | - | Min: 1 Mult: 1 | YES | 48 | 15 ns | CYPRESS SEMICONDUCTOR CORP | Cypress Semiconductor | CY7C1021BV33L-15BAC | 65536 words | 64000 | 70 °C | PLASTIC/EPOXY | TFBGA | 7 X 7 MM, 1.20 MM HEIGHT, FBGA-48 | BGA48,6X8,30 | SQUARE | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | BGA | 7.92 | No | 3.3 V | e0 | 3A991.B.2.B | Tin/Lead (Sn/Pb) | 8542.32.00.41 | SRAMs | CMOS | BOTTOM | BALL | 1 | 0.75 mm | not_compliant | 48 | S-PBGA-B48 | Not Qualified | 3.63 V | 3.3 V | COMMERCIAL | 2.97 V | ASYNCHRONOUS | 0.14 mA | 64KX16 | 3-STATE | 1.2 mm | 16 | 0.0001 A | 1048576 bit | PARALLEL | COMMON | STANDARD SRAM | 2 V | 7 mm | 7 mm | ||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No MT46H8M32LGB5-6:A | Micron | Datasheet | - | - | Min: 1 Mult: 1 | YES | 90 | 90 | 5 ns | 166 MHz | MICRON TECHNOLOGY INC | Micron Technology Inc | MT46H8M32LGB5-6:A | 8388608 words | 8000000 | 70 °C | PLASTIC/EPOXY | VFBGA | VFBGA, BGA90,9X15,32 | BGA90,9X15,32 | RECTANGULAR | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | Obsolete | BGA | 30 | 5.73 | Compliant | Yes | 1.8 V | e1 | Yes | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | 70 °C | 0 °C | AUTO/SELF REFRESH | 8542.32.00.24 | DRAMs | CMOS | BOTTOM | BALL | 260 | 1 | 0.8 mm | compliant | 90 | R-PBGA-B90 | Not Qualified | 1.8 V | 1.95 V | 1.8 V | COMMERCIAL | 1.7 V | 1 | SYNCHRONOUS | 0.14 mA | 32 b | 8MX32 | 3-STATE | 1 mm | 32 | 14 b | 256 Mb | 268435456 bit | 166 MHz | COMMON | DDR DRAM | 4096 | 2,4,8 | 2,4,8 | FOUR BANK PAGE BURST | YES | 13 mm | 8 mm | No | Lead Free | |||||||||||||||||
![]() | Mfr Part No 71024S20YI | Integrated Device Technology | Datasheet | - | - | Min: 1 Mult: 1 | YES | 32 | 20 ns | INTEGRATED DEVICE TECHNOLOGY INC | Integrated Device Technology Inc | 71024S20YI | 3 | 131072 words | 128000 | 85 °C | -40 °C | PLASTIC/EPOXY | SOJ | 0.400 INCH, PLASTIC, SOJ-32 | SOJ32,.44 | RECTANGULAR | SMALL OUTLINE | Obsolete | SOJ | 30 | 5.19 | No | 5 V | e0 | No | 3A991.B.2.B | Tin/Lead (Sn85Pb15) | 8542.32.00.41 | SRAMs | CMOS | DUAL | J BEND | 225 | 1 | 1.27 mm | not_compliant | 32 | R-PDSO-J32 | Not Qualified | 5.5 V | 5 V | INDUSTRIAL | 4.5 V | ASYNCHRONOUS | 0.14 mA | 128KX8 | 3-STATE | 3.683 mm | 8 | 0.01 A | 1048576 bit | PARALLEL | COMMON | STANDARD SRAM | 4.5 V | 20.96 mm | 10.16 mm |
MT46H64M16LFCK-6IT:A
Micron
Package:Memory
Price: please inquire
GS74117AX-8IT
GSI Technology
Package:Memory
Price: please inquire
MT46H16M32LFCM-6:B
Micron
Package:Memory
Price: please inquire
MT46H16M32LFCM-6IT
Micron
Package:Memory
Price: please inquire
MT46H64M16LFCK-75:A
Micron
Package:Memory
Price: please inquire
X2816BP
Xicor
Package:Memory
Price: please inquire
GS74116ATP-8I
GSI Technology
Package:Memory
Price: please inquire
GS74116AGP-8IT
GSI Technology
Package:Memory
Price: please inquire
GS74116AGX-8IT
GSI Technology
Package:Memory
Price: please inquire
CY7C1021BV33L-15BAC
Cypress Semiconductor
Package:Memory
Price: please inquire
MT46H8M32LGB5-6:A
Micron
Package:Memory
Price: please inquire
71024S20YI
Integrated Device Technology
Package:Memory
Price: please inquire
