The category is 'Memory'
Memory (66)
- All Manufacturers
- Ihs Manufacturer
- JESD-30 Code
- Memory Density
- Number of Terminals
- Operating Temperature-Max
- Package Body Material
- Package Code
- Package Equivalence Code
- Package Shape
- Package Style
- Qualification Status
- Supply Current-Max
- Supply Current-Max:
0.15 mA
Image | Part Number | Manufacturer | Datasheet | Availability | Pricing(USD) | Quantity | RoHS | Mounting Type | Package / Case | Surface Mount | Supplier Device Package | Material | Shape | Package Cooled | Material Finish | Number of Terminals | Access Time-Max | Base Product Number | Clock Frequency-Max (fCLK) | Ihs Manufacturer | Manufacturer | Manufacturer Part Number | Mfr | Moisture Sensitivity Levels | Number of Words | Number of Words Code | Operating Temperature-Max | Operating Temperature-Min | Package | Package Body Material | Package Code | Package Description | Package Equivalence Code | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Product Status | Reflow Temperature-Max (s) | Risk Rank | RoHS | Rohs Code | Supply Voltage-Nom (Vsup) | Usage Level | Operating Temperature | Packaging | Series | Size / Dimension | Tolerance | JESD-609 Code | Pbfree Code | Part Status | Number of Terminations | ECCN Code | Temperature Coefficient | Type | Resistance | Terminal Finish | Composition | Power (Watts) | Additional Feature | HTS Code | Capacitance | Subcategory | Technology | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Terminal Pitch | Reach Compliance Code | Frequency | Frequency Stability | Pin Count | JESD-30 Code | Qualification Status | ESR (Equivalent Series Resistance) | Failure Rate | Supply Voltage-Max (Vsup) | Power Supplies | Temperature Grade | Supply Voltage-Min (Vsup) | Voltage | Attachment Method | Height Off Base (Height of Fin) | Thermal Resistance @ Forced Air Flow | Load Capacitance | Number of Ports | Operating Mode | Frequency Tolerance | Supply Current-Max | Organization | Output Characteristics | Seated Height-Max | Memory Width | Standby Current-Max | Memory Density | Screening Level | Parallel/Serial | I/O Type | Memory IC Type | Programming Voltage | Endurance | Write Cycle Time-Max (tWC) | Data Retention Time-Min | Write Protection | Standby Voltage-Min | Data Polling | Toggle Bit | Command User Interface | Output Enable | Page Size | Cycle Time | Refresh Cycles | Sequential Burst Length | Interleaved Burst Length | Thermal Resistance @ Natural | Access Mode | Power Dissipation @ Temperature Rise | Features | Reverse Pinout | Self Refresh | Diameter | Height Seated (Max) | Length | Width | Ratings |
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![]() | Mfr Part No K4S643232H-UC60 | Samsung | Datasheet | 2 | - | Min: 1 Mult: 1 | YES | 86 | 5.5 ns | 166 MHz | SAMSUNG SEMICONDUCTOR INC | Samsung Semiconductor | K4S643232H-UC60 | 3 | 2097152 words | 2000000 | 70 °C | PLASTIC/EPOXY | TSSOP | TSSOP86,.46,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | Obsolete | 40 | 5.52 | Yes | 3.3 V | e6 | Tin/Bismuth (Sn97Bi3) | DRAMs | CMOS | DUAL | GULL WING | 260 | 0.5 mm | unknown | R-PDSO-G86 | Not Qualified | 3.3 V | COMMERCIAL | 0.15 mA | 2MX32 | 3-STATE | 32 | 0.002 A | 67108864 bit | COMMON | SYNCHRONOUS DRAM | 4096 | 1,2,4,8,FP | 1,2,4,8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No W9412G6JH-5 | Winbond | Datasheet | 520 | - | Min: 1 Mult: 1 | YES | 66 | 0.7 ns | 200 MHz | WINBOND ELECTRONICS CORP | Winbond Electronics Corp | W9412G6JH-5 | 8388608 words | 8000000 | 70 °C | PLASTIC/EPOXY | TSOP2 | TSOP2, TSSOP66,.46 | TSSOP66,.46 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | TSOP2 | NOT SPECIFIED | 7.66 | Yes | 2.5 V | e3 | EAR99 | Tin (Sn) | AUTO/SELF REFRESH | 8542.32.00.02 | DRAMs | CMOS | DUAL | GULL WING | NOT SPECIFIED | 1 | 0.65 mm | unknown | 66 | R-PDSO-G66 | Not Qualified | 2.7 V | 2.5 V | COMMERCIAL | 2.3 V | 1 | SYNCHRONOUS | 0.15 mA | 8MX16 | 3-STATE | 1.2 mm | 16 | 0.005 A | 134217728 bit | COMMON | DDR DRAM | 4096 | 2,4,8 | 2,4,8 | FOUR BANK PAGE BURST | YES | 22.22 mm | 10.16 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No NAND16GAH0HZA5E | Micron | Datasheet | - | - | Min: 1 Mult: 1 | YES | 169 | MICRON TECHNOLOGY INC | Micron Technology Inc | NAND16GAH0HZA5E | 85 °C | -25 °C | PLASTIC/EPOXY | FBGA | FBGA, BGA169,14X28,20 | BGA169,14X28,20 | RECTANGULAR | GRID ARRAY, FINE PITCH | Active | 5.69 | Yes | Other Memory ICs | CMOS | BOTTOM | BALL | 0.5 mm | compliant | R-PBGA-B169 | Not Qualified | 1.8/3.3,3.3 V | OTHER | 0.15 mA | 17179869184 bit | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No MT5C2568C-20/XT | Micross | Datasheet | - | - | Min: 1 Mult: 1 | NO | 28 | 20 ns | MICROSS COMPONENTS | Micross Components | MT5C2568C-20/XT | 32768 words | 32000 | 125 °C | -55 °C | CERAMIC, METAL-SEALED COFIRED | DIP | DIP, DIP28,.3 | DIP28,.3 | RECTANGULAR | IN-LINE | Active | DIP | NOT SPECIFIED | 5.02 | No | 5 V | e0 | No | 3A001.A.2.C | TIN LEAD | 8542.32.00.41 | SRAMs | CMOS | DUAL | THROUGH-HOLE | NOT SPECIFIED | 1 | 2.54 mm | compliant | 28 | R-CDIP-T28 | Not Qualified | 5.5 V | 5 V | MILITARY | 4.5 V | ASYNCHRONOUS | 0.15 mA | 32KX8 | 3-STATE | 5.715 mm | 8 | 0.005 A | 262144 bit | PARALLEL | COMMON | STANDARD SRAM | 4.5 V | 7.62 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No CY7C197BN-15VCT | Cypress Semiconductor | Datasheet | 768 | - | Min: 1 Mult: 1 | YES | 24 | 15 ns | CYPRESS SEMICONDUCTOR CORP | Cypress Semiconductor | CY7C197BN-15VCT | 1 | 262144 words | 256000 | 70 °C | PLASTIC/EPOXY | SOJ | 8 X 15 MM, 3.50 MM HEIGHT, MO-088, SOJ-24 | SOJ24,.34 | RECTANGULAR | SMALL OUTLINE | Obsolete | SOJ | NOT SPECIFIED | 5.76 | No | 5 V | No | EAR99 | 8542.32.00.41 | SRAMs | CMOS | DUAL | J BEND | 225 | 1 | 1.27 mm | not_compliant | 24 | R-PDSO-J24 | Not Qualified | 5.5 V | 5 V | COMMERCIAL | 4.5 V | ASYNCHRONOUS | 0.15 mA | 256KX1 | 3-STATE | 3.55 mm | 1 | 0.01 A | 262144 bit | PARALLEL | SEPARATE | STANDARD SRAM | 4.5 V | 15.365 mm | 7.505 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No CY7C4251-10JC | Cypress | Datasheet | - | - | Min: 1 Mult: 1 | Terminal: ¼in Combos: 2, 3 or 4, w/Resistor | YES | 32 | 8 ns | 100 MHz | CYPRESS SEMICONDUCTOR CORP | BARKER MICROFARADS INC | CY7C4251-10JC | 3 | 8192 words | 8000 | 70 °C | PLASTIC/EPOXY | QCCJ | PLASTIC, LCC-32 | LDCC32,.5X.6 | RECTANGULAR | CHIP CARRIER | Obsolete | QFJ | 30 | 8.69 | Y | No | 5 V | 2.00in Round Case | ±10% | e0 | EAR99 | TIN LEAD | 8542.32.00.71 | 506uF | FIFOs | CMOS | QUAD | J BEND | 225 | 1 | 1.27 mm | not_compliant | 32 | R-PQCC-J32 | Not Qualified | 5.5 V | 5 V | COMMERCIAL | 4.5 V | 440VAC | SYNCHRONOUS | 0.15 mA | 8KX9 | 3-STATE | 3.55 mm | 9 | 0.03 A | 73728 bit | PARALLEL | OTHER FIFO | YES | 10 ns | 13.97 mm | 11.43 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No CY7C199-35LMB | Cypress | Datasheet | 112 | - | Min: 1 Mult: 1 | Panel mounting hole | YES | 28 | 35 ns | CYPRESS SEMICONDUCTOR CORP | ECE/EXCEL CELL ELECTRONIC CORP | CY7C199-35LMB | 32768 words | 32000 | 125 °C | -55 °C | CERAMIC, METAL-SEALED COFIRED | QCCN | LCC-28 | LCC28,.35X.55 | RECTANGULAR | CHIP CARRIER | Obsolete | QLCC | 30 | 8.35 | No | 5 V | Military grade | Packed by set, 10 sets per box | Compact Size, NO - 1, NC - 0 | e0 | 3A001.A.2.C | Tin/Lead (Sn/Pb) | AUTOMATIC POWER-DOWN | 8542.32.00.41 | SRAMs | CMOS | QUAD | NO LEAD | 240 | 1 | 1.27 mm | not_compliant | 28 | R-CQCC-N28 | Not Qualified | 5.5 V | 5 V | MILITARY | 4.5 V | 6V AC/DC | 1 | ASYNCHRONOUS | 0.15 mA | 32KX8 | 3-STATE | 1.905 mm | 8 | 0.015 A | 262144 bit | 38535Q/M;38534H;883B | PARALLEL | COMMON | STANDARD SRAM | 4.5 V | YES | 13.97 mm | 8.89 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No 5962-8866205UA | Analog Devices | Datasheet | - | - | Min: 1 Mult: 1 | Axial | YES | Axial | 28 | 35 ns | RLR05 | TELEDYNE E2V (UK) LTD | e2v technologies | 5962-8866205UA | Vishay Dale | 32768 words | 32000 | 125 °C | -55 °C | Tape & Reel (TR) | CERAMIC, METAL-SEALED COFIRED | QCCN | QCCN, LCC28,.35X.55 | LCC28,.35X.55 | RECTANGULAR | CHIP CARRIER | Active | Active | 5.55 | 5 V | Military grade | -65°C ~ 150°C | Military, MIL-PRF-39017/05, RLR05 | 0.066 Dia x 0.150 L (1.68mm x 3.81mm) | ±1% | e0 | 2 | 3A001.A.2.C | ±100ppm/°C | 80.6 kOhms | TIN LEAD | Metal Film | 0.125W, 1/8W | 8542.32.00.41 | SRAMs | CMOS | QUAD | NO LEAD | 1 | 1.27 mm | compliant | R-CQCC-N28 | Qualified | M (1%) | 5.5 V | 5 V | MILITARY | 4.5 V | ASYNCHRONOUS | 0.15 mA | 32KX8 | 3-STATE | 3.048 mm | 8 | 0.02 A | 262144 bit | 38535Q/M;38534H;883B | PARALLEL | COMMON | STANDARD SRAM | 4.5 V | Military, Moisture Resistant, Weldable | - | 13.97 mm | 8.89 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No AS7C34098A-12JC | Alliance Memory | Datasheet | - | - | Min: 1 Mult: 1 | YES | Aluminum | Square, Fins | Assorted (BGA, LGA, CPU, ASIC...) | Blue Anodized | 44 | 12 ns | ALLIANCE MEMORY INC | Alliance Memory Inc | AS7C34098A-12JC | 262144 words | 256000 | 70 °C | PLASTIC/EPOXY | SOJ | SOJ, SOJ44,.44 | SOJ44,.44 | RECTANGULAR | SMALL OUTLINE | Obsolete | SOJ | 30 | 5.1 | No | 3.3 V | pushPIN™ | No | Active | 3A991.B.2.A | Top Mount | 8542.32.00.41 | SRAMs | CMOS | DUAL | J BEND | 225 | 1 | 1.27 mm | compliant | 44 | R-PDSO-J44 | Not Qualified | 3.6 V | 3.3 V | COMMERCIAL | 3 V | Push Pin | 1.181 (30.00mm) | 4.91°C/W @ 100 LFM | ASYNCHRONOUS | 0.15 mA | 256KX16 | 3-STATE | 3.7592 mm | 16 | 0.008 A | 4194304 bit | PARALLEL | COMMON | STANDARD SRAM | 3 V | -- | -- | -- | 1.181 (30.00mm) | 1.181 (30.00mm) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No 5962-8866203YA | Renesas | Datasheet | 177 | - | Min: 1 Mult: 1 | Surface Mount | 4-SOJ, 5.5mm pitch | YES | 32 | 55 ns | INTEGRATED DEVICE TECHNOLOGY INC | Integrated Device Technology Inc | 5962-8866203YA | Suntsu Electronics, Inc. | 32768 words | 32000 | 125 °C | -55 °C | Bulk | CERAMIC, METAL-SEALED COFIRED | QCCN | QCCN, LCC32,.45X.55 | LCC32,.45X.55 | RECTANGULAR | CHIP CARRIER | Obsolete | QFJ | Active | 30 | 8.05 | Non-Compliant | No | 5 V | Military grade | -40°C ~ 85°C | SXT834 | 0.315 L x 0.150 W (8.00mm x 3.80mm) | e0 | No | 3A001.A.2.C | MHz Crystal | TIN LEAD | 8542.32.00.41 | SRAMs | CMOS | QUAD | NO LEAD | 225 | 1 | 1.27 mm | compliant | 32 MHz | ±25ppm | 32 | R-CQCC-N32 | Not Qualified | 40 Ohms | 5.5 V | 5 V | MILITARY | 4.5 V | 18pF | 1 | Fundamental | ±25ppm | 0.15 mA | 32KX8 | 3-STATE | 3.048 mm | 8 | 0.02 A | 262144 bit | 38535Q/M;38534H;883B | PARALLEL | COMMON | STANDARD SRAM | 4.5 V | YES | 0.098 (2.50mm) | 13.97 mm | 11.43 mm | - | ||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No NAND08GAH0JZC5F | Micron Technology | Datasheet | - | - | Min: 1 Mult: 1 | YES | 153 | MICRON TECHNOLOGY INC | Micron Technology Inc | NAND08GAH0JZC5F | 85 °C | -25 °C | PLASTIC/EPOXY | FBGA | FBGA, BGA153,14X14,20 | BGA153,14X14,20 | SQUARE | GRID ARRAY, FINE PITCH | Obsolete | 5.83 | Yes | Other Memory ICs | CMOS | BOTTOM | BALL | 0.5 mm | unknown | S-PBGA-B153 | Not Qualified | 1.8/3.3,3.3 V | OTHER | 0.15 mA | 8589934592 bit | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No KM416V1200BJ-6 | Samsung Semiconductor | Datasheet | - | - | Min: 1 Mult: 1 | YES | 42 | 60 ns | SAMSUNG SEMICONDUCTOR INC | 1048576 words | 1000000 | 70 °C | PLASTIC/EPOXY | SOJ | SOJ, SOJ42,.44 | SOJ42,.44 | RECTANGULAR | SMALL OUTLINE | Obsolete | SOJ | No | 3.3 V | e0 | No | EAR99 | TIN LEAD | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | 8542.32.00.02 | DUAL | J BEND | 1 | 1.27 mm | unknown | 42 | R-PDSO-J42 | Not Qualified | 3.6 V | COMMERCIAL | 3 V | 1 | ASYNCHRONOUS | 0.15 mA | 1MX16 | 3-STATE | 3.76 mm | 16 | 0.001 A | 16777216 bit | COMMON | FAST PAGE DRAM | 1024 | FAST PAGE | NO | 27.31 mm | 10.16 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No TC55VZM216AJJN12 | Toshiba America Electronic Components | Datasheet | - | - | Min: 1 Mult: 1 | YES | 44 | 12 ns | TOSHIBA CORP | 262144 words | 256000 | 70 °C | PLASTIC/EPOXY | SOJ | 0.400 INCH, 1.27 MM PITCH, PLASTIC, SOJ-44 | SOJ44,.44 | RECTANGULAR | SMALL OUTLINE | Obsolete | SOJ | No | 3.3 V | e0 | 3A991.B.2.A | Tin/Lead (Sn/Pb) | 8542.32.00.41 | DUAL | J BEND | 1 | 1.27 mm | unknown | 44 | R-PDSO-J44 | Not Qualified | 3.6 V | COMMERCIAL | 3 V | ASYNCHRONOUS | 0.15 mA | 256KX16 | 3-STATE | 3.7 mm | 16 | 0.004 A | 4194304 bit | PARALLEL | COMMON | CACHE SRAM | 3 V | 28.58 mm | 10.16 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No K4S56323LF-FL1L | Samsung Semiconductor | Datasheet | - | - | Min: 1 Mult: 1 | YES | 90 | 7 ns | 111 MHz | SAMSUNG SEMICONDUCTOR INC | 8388608 words | 8000000 | 70 °C | -25 °C | PLASTIC/EPOXY | FBGA | BGA90,9X15,32 | RECTANGULAR | GRID ARRAY, FINE PITCH | Active | No | 2.5 V | e0 | EAR99 | Tin/Lead (Sn/Pb) | 8542.32.00.24 | BOTTOM | BALL | 0.8 mm | compliant | R-PBGA-B90 | Not Qualified | OTHER | 0.15 mA | 8MX32 | 32 | 0.0005 A | 268435456 bit | COMMON | SYNCHRONOUS DRAM | 4096 | 1,2,4,8,FP | 1,2,4,8 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No KM68257BJ-15 | Samsung Semiconductor | Datasheet | - | - | Min: 1 Mult: 1 | YES | 28 | 15 ns | SAMSUNG SEMICONDUCTOR INC | 32768 words | 32000 | 70 °C | PLASTIC/EPOXY | SOJ | SOJ, SOJ28,.34 | SOJ28,.34 | RECTANGULAR | SMALL OUTLINE | Obsolete | SOJ | No | 5 V | e0 | No | EAR99 | TIN LEAD | 8542.32.00.41 | DUAL | J BEND | 1 | 1.27 mm | unknown | 28 | R-PDSO-J28 | Not Qualified | 5.5 V | COMMERCIAL | 4.5 V | 1 | ASYNCHRONOUS | 0.15 mA | 32KX8 | 3-STATE | 3.76 mm | 8 | 0.002 A | 262144 bit | PARALLEL | COMMON | STANDARD SRAM | 4.5 V | YES | 18.42 mm | 7.62 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No KM681002J-20 | Samsung Semiconductor | Datasheet | - | - | Min: 1 Mult: 1 | YES | 32 | 20 ns | SAMSUNG SEMICONDUCTOR INC | 131072 words | 128000 | 70 °C | PLASTIC/EPOXY | SOJ | 0.400 INCH, PLASTIC, SOJ-32 | SOJ32,.44 | RECTANGULAR | SMALL OUTLINE | Obsolete | SOJ | No | 5 V | e0 | No | 3A991.B.2.B | TIN LEAD | 8542.32.00.41 | DUAL | J BEND | 1 | 1.27 mm | unknown | 32 | R-PDSO-J32 | Not Qualified | 5.5 V | COMMERCIAL | 4.5 V | 1 | ASYNCHRONOUS | 0.15 mA | 128KX8 | 3-STATE | 3.76 mm | 8 | 0.01 A | 1048576 bit | PARALLEL | COMMON | STANDARD SRAM | 4.5 V | YES | 20.96 mm | 10.16 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No X2864BDM-12 | Xicor Inc | Datasheet | - | - | Min: 1 Mult: 1 | NO | 28 | 120 ns | XICOR INC | 8192 words | 8000 | 125 °C | -55 °C | CERAMIC, GLASS-SEALED | DIP | DIP, DIP28,.6 | DIP28,.6 | RECTANGULAR | IN-LINE | Obsolete | No | 5 V | e0 | Tin/Lead (Sn/Pb) | DUAL | THROUGH-HOLE | 1 | 2.54 mm | unknown | R-GDIP-T28 | Not Qualified | 5.5 V | MILITARY | 4.5 V | ASYNCHRONOUS | 0.15 mA | 8KX8 | 3-STATE | 7.24 mm | 8 | 65536 bit | PARALLEL | EEPROM | 5 V | 10000 Write/Erase Cycles | 5 ms | 10 | HARDWARE | YES | NO | NO | 32 words | NO | 37.15 mm | 15.24 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No HM514280JP-8 | Hitachi Ltd | Datasheet | - | - | Min: 1 Mult: 1 | YES | 40 | 80 ns | HITACHI LTD | 262144 words | 256000 | 70 °C | PLASTIC/EPOXY | SOJ | SOJ, SOJ40,.44 | SOJ40,.44 | RECTANGULAR | SMALL OUTLINE | Obsolete | SOJ | No | 5 V | e0 | No | EAR99 | TIN LEAD | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | 8542.32.00.02 | DUAL | J BEND | 1 | 1.27 mm | unknown | 40 | R-PDSO-J40 | Not Qualified | 5.5 V | COMMERCIAL | 4.5 V | 1 | ASYNCHRONOUS | 0.15 mA | 256KX18 | 3-STATE | 3.76 mm | 18 | 0.001 A | 4718592 bit | COMMON | FAST PAGE DRAM | 512 | FAST PAGE | NO | 25.8 mm | 10.16 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No PDM41256SA25D | Paradigm Technology Inc | Datasheet | - | - | Min: 1 Mult: 1 | NO | 28 | 25 ns | PARADIGM TECHNOLOGY INC | 32768 words | 32000 | 70 °C | CERAMIC, GLASS-SEALED | DIP | DIP, DIP28,.3 | DIP28,.3 | RECTANGULAR | IN-LINE | Obsolete | No | 5 V | e0 | No | EAR99 | TIN LEAD | 8542.32.00.41 | DUAL | THROUGH-HOLE | 1 | 2.54 mm | unknown | R-GDIP-T28 | Not Qualified | 5.5 V | COMMERCIAL | 4.5 V | 1 | ASYNCHRONOUS | 0.15 mA | 32KX8 | 3-STATE | 8 | 0.01 A | 262144 bit | PARALLEL | COMMON | STANDARD SRAM | 4.5 V | YES | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No M5M4V18160DJ-6 | Mitsubishi Electric | Datasheet | - | - | Min: 1 Mult: 1 | YES | 42 | 60 ns | MITSUBISHI ELECTRIC CORP | 1048576 words | 1000000 | 70 °C | PLASTIC/EPOXY | SOJ | SOJ, SOJ42,.44 | SOJ42,.44 | RECTANGULAR | SMALL OUTLINE | Obsolete | No | 3.3 V | e0 | EAR99 | Tin/Lead (Sn/Pb) | 8542.32.00.02 | DUAL | J BEND | 1.27 mm | unknown | R-PDSO-J42 | Not Qualified | COMMERCIAL | 0.15 mA | 1MX16 | 3-STATE | 16 | 0.0005 A | 16777216 bit | COMMON | FAST PAGE DRAM | 1024 | NO |
K4S643232H-UC60
Samsung
Package:Memory
Price: please inquire
W9412G6JH-5
Winbond
Package:Memory
Price: please inquire
NAND16GAH0HZA5E
Micron
Package:Memory
Price: please inquire
MT5C2568C-20/XT
Micross
Package:Memory
Price: please inquire
CY7C197BN-15VCT
Cypress Semiconductor
Package:Memory
Price: please inquire
CY7C4251-10JC
Cypress
Package:Memory
Price: please inquire
CY7C199-35LMB
Cypress
Package:Memory
Price: please inquire
5962-8866205UA
Analog Devices
Package:Memory
Price: please inquire
AS7C34098A-12JC
Alliance Memory
Package:Memory
Price: please inquire
5962-8866203YA
Renesas
Package:Memory
Price: please inquire
NAND08GAH0JZC5F
Micron Technology
Package:Memory
Price: please inquire
KM416V1200BJ-6
Samsung Semiconductor
Package:Memory
Price: please inquire
TC55VZM216AJJN12
Toshiba America Electronic Components
Package:Memory
Price: please inquire
K4S56323LF-FL1L
Samsung Semiconductor
Package:Memory
Price: please inquire
KM68257BJ-15
Samsung Semiconductor
Package:Memory
Price: please inquire
KM681002J-20
Samsung Semiconductor
Package:Memory
Price: please inquire
X2864BDM-12
Xicor Inc
Package:Memory
Price: please inquire
HM514280JP-8
Hitachi Ltd
Package:Memory
Price: please inquire
PDM41256SA25D
Paradigm Technology Inc
Package:Memory
Price: please inquire
M5M4V18160DJ-6
Mitsubishi Electric
Package:Memory
Price: please inquire
