The category is 'Memory'
Memory (68)
- All Manufacturers
- Ihs Manufacturer
- JESD-30 Code
- Memory Density
- Memory IC Type
- Memory Width
- Number of Terminals
- Number of Words
- Number of Words Code
- Operating Temperature-Max
- Organization
- Package Code
- Supply Current-Max
- Supply Current-Max:
0.16 mA
Image | Part Number | Manufacturer | Datasheet | Availability | Pricing(USD) | Quantity | RoHS | Contact plating | Mount | Surface Mount | Number of pins | Number of Pins | Weight | Number of Terminals | Material - Frame | Material - Blade | Access Time-Max | Approvals | Clock Frequency-Max (fCLK) | Connector | Connector pinout layout | Contacts pitch | Electrical mounting | Gross weight | Ihs Manufacturer | Kind of connector | Lifetime @ Temp. | Manufacturer | Manufacturer Part Number | Moisture Sensitivity Levels | Number of Words | Number of Words Code | Operating Temperature-Max | Operating Temperature-Min | Package Body Material | Package Code | Package Description | Package Equivalence Code | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Reflow Temperature-Max (s) | Risk Rank | RoHS | Rohs Code | Row pitch | Spatial orientation | Supply Voltage-Nom (Vsup) | Type of connector | Usage Level | Voltage Rated | Operating temperature | Operating Temperature | Packaging | Series | Size / Dimension | JESD-609 Code | Pbfree Code | Part Status | Termination | ECCN Code | Terminal Finish | Max Operating Temperature | Min Operating Temperature | Power (Watts) | Additional Feature | HTS Code | Subcategory | Technology | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Ingress Protection | Terminal Pitch | Reach Compliance Code | Current rating | Current Rating | Frequency | Time@Peak Reflow Temperature-Max (s) | Pin Count | JESD-30 Code | Qualification Status | Operating Supply Voltage | Supply Voltage-Max (Vsup) | Power Supplies | Temperature Grade | Supply Voltage-Min (Vsup) | Max Supply Voltage | Min Supply Voltage | Memory Size | Number of Ports | Nominal Supply Current | Operating Mode | Supply Current-Max | Access Time | Organization | Output Characteristics | Seated Height-Max | Memory Width | Density | Standby Current-Max | RPM | Memory Density | Bearing Type | Fan Type | Air Flow | Noise | Voltage Range | Static Pressure | Screening Level | Parallel/Serial | I/O Type | Word Size | Memory IC Type | Standby Voltage-Min | Rated voltage | Output Enable | Refresh Cycles | Sequential Burst Length | Interleaved Burst Length | Access Mode | Profile | Saturation Current | Features | Self Refresh | Length | Width | Plating thickness | Flammability rating | Lead Free |
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 | Mfr Part No MT5C2568C-25/883C | Micross | Datasheet | - | - | Min: 1 Mult: 1 | NO | 28 | 25 ns | MICROSS COMPONENTS | Micross Components | MT5C2568C-25/883C | 32768 words | 32000 | 125 °C | -55 °C | CERAMIC, METAL-SEALED COFIRED | DIP | DIP, DIP28,.3 | DIP28,.3 | RECTANGULAR | IN-LINE | Active | DIP | NOT SPECIFIED | 5.33 | No | 5 V | Military grade | e0 | No | 3A001.A.2.C | TIN LEAD | TTL COMPATIBLE INPUT/OUTPUT; BATTERY BACKUP; LOW POWER STANDBY | 8542.32.00.41 | SRAMs | CMOS | DUAL | THROUGH-HOLE | NOT SPECIFIED | 1 | 2.54 mm | compliant | 28 | R-CDIP-T28 | Not Qualified | 5.5 V | 5 V | MILITARY | 4.5 V | ASYNCHRONOUS | 0.16 mA | 32KX8 | 3-STATE | 5.715 mm | 8 | 0.02 A | 262144 bit | MIL-STD-883 | PARALLEL | COMMON | STANDARD SRAM | 4.5 V | 35.56 mm | 7.62 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No CY7C1020-15ZC | Cypress Semiconductor | Datasheet | - | - | Min: 1 Mult: 1 | Surface Mount | YES | 44 | 44 | 15 ns | CYPRESS SEMICONDUCTOR CORP | Cypress Semiconductor | CY7C1020-15ZC | 3 | 32768 words | 32000 | 70 °C | PLASTIC/EPOXY | TSOP2 | TSOP2-44 | TSOP44,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | TSOP2 | 30 | 8.49 | Non-Compliant | No | 5 V | Bulk | e0 | 3A991.B.2.B | Tin/Lead (Sn/Pb) | 70 °C | 0 °C | AUTOMATIC POWER-DOWN | 8542.32.00.41 | SRAMs | CMOS | DUAL | GULL WING | 240 | 1 | 0.8 mm | not_compliant | 15 GHz | 44 | R-PDSO-G44 | Not Qualified | 5 V | 5.5 V | 5 V | COMMERCIAL | 4.5 V | 5.5 V | 4.5 V | 500 kB | 1 | 160 mA | ASYNCHRONOUS | 0.16 mA | 15 ns | 32KX16 | 3-STATE | 1.2 mm | 16 | 512 kb | 0.001 A | 524288 bit | PARALLEL | COMMON | 16 b | STANDARD SRAM | 4.5 V | YES | 18.41 mm | 10.16 mm | Contains Lead | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No W9725G6JB-18 | Winbond | Datasheet | - | - | Min: 1 Mult: 1 | YES | 84 | 0.35 ns | 533 MHz | WINBOND ELECTRONICS CORP | Winbond Electronics Corp | W9725G6JB-18 | 1 | 16777216 words | 16000000 | 85 °C | PLASTIC/EPOXY | TFBGA | TFBGA, BGA84,9X15,32 | BGA84,9X15,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | NOT SPECIFIED | 5.66 | Yes | 1.8 V | e3 | Yes | Matte Tin (Sn) | AUTO/SELF REFRESH | DRAMs | CMOS | BOTTOM | BALL | 225 | 1 | 0.8 mm | unknown | R-PBGA-B84 | Not Qualified | 1.9 V | 1.8 V | OTHER | 1.7 V | 1 | SYNCHRONOUS | 0.16 mA | 16MX16 | 3-STATE | 1.2 mm | 16 | 0.006 A | 268435456 bit | COMMON | DDR DRAM | 8192 | 4,8 | 4,8 | FOUR BANK PAGE BURST | YES | 12.5 mm | 8 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No AS7C34098A-12JI | Alliance Memory | Datasheet | - | - | Min: 1 Mult: 1 | YES | 0.187 lb (84.82g) | 44 | Polybutylene Terephthalate (PBT) | Polybutylene Terephthalate (PBT) | 12 ns | CE, cURus, TUV | ALLIANCE MEMORY INC | 70000 Hrs @ 40°C | Alliance Memory Inc | AS7C34098A-12JI | 262144 words | 256000 | 85 °C | -40 °C | PLASTIC/EPOXY | SOJ | SOJ, SOJ44,.44 | SOJ44,.44 | RECTANGULAR | SMALL OUTLINE | Obsolete | SOJ | 30 | 5.12 | Non-Compliant | No | 3.3 V | 12VDC | 14 ~ 158°F (-10 ~ 70°C) | CFM-80V | Square - 80mm L x 80mm H | No | Active | 3 Wire Leads | 3A991.B.2.A | 2.70W | 8542.32.00.41 | SRAMs | CMOS | DUAL | J BEND | 225 | 1 | -- | 1.27 mm | compliant | 0.225A | 44 | R-PDSO-J44 | Not Qualified | 3.6 V | 3.3 V | INDUSTRIAL | 3 V | ASYNCHRONOUS | 0.16 mA | 256KX16 | 3-STATE | 3.7592 mm | 16 | 0.008 A | 3900 RPM | 4194304 bit | omniCOOL™ Magnetic Sleeve | Tubeaxial | 45.0 CFM (1.26m³/min) | 43.0 dB(A) | 6 ~ 13.8VDC | 0.260 in H2O (64.8 Pa) | PARALLEL | COMMON | STANDARD SRAM | 3 V | Auto Restart | 28.575 mm | 20.00mm | |||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No AS7C32096A-12TI | Alliance Memory | Datasheet | - | - | Min: 1 Mult: 1 | YES | 44 | 12 ns | ALLIANCE MEMORY INC | Alliance Memory Inc | AS7C32096A-12TI | 262144 words | 256000 | 85 °C | -40 °C | PLASTIC/EPOXY | TSOP2 | TSOP2, TSOP44,.46,32 | TSOP44,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | TSOP2 | 30 | 5.61 | No | 3.3 V | e0 | No | 3A991.B.2.A | TIN LEAD | 8542.32.00.41 | SRAMs | CMOS | DUAL | GULL WING | 240 | 1 | 0.8 mm | compliant | 44 | R-PDSO-G44 | Not Qualified | 3.6 V | 3/3.3 V | INDUSTRIAL | 3 V | ASYNCHRONOUS | 0.16 mA | 256KX8 | 3-STATE | 1.2 mm | 8 | 0.008 A | 2097152 bit | PARALLEL | COMMON | STANDARD SRAM | 3 V | 18.415 mm | 10.16 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No IDT71V016SA10PHG | Renesas | Datasheet | - | - | Min: 1 Mult: 1 | YES | 44 | 10 ns | INTEGRATED DEVICE TECHNOLOGY INC | Integrated Device Technology Inc | IDT71V016SA10PHG | 3 | 65536 words | 64000 | 70 °C | PLASTIC/EPOXY | TSOP2 | TSOP2, TSOP44,.46,32 | TSOP44,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Active | TSOP2 | 30 | 5.08 | Yes | 3.3 V | e3 | Yes | 3A991.B.2.A | Matte Tin (Sn) - annealed | 8542.32.00.41 | SRAMs | CMOS | DUAL | GULL WING | 260 | 1 | 0.8 mm | compliant | 44 | R-PDSO-G44 | Not Qualified | 3.6 V | 3.3 V | COMMERCIAL | 3.15 V | 1 | ASYNCHRONOUS | 0.16 mA | 64KX16 | 3-STATE | 1.2 mm | 16 | 0.01 A | 1048576 bit | PARALLEL | COMMON | STANDARD SRAM | 3.15 V | YES | 18.41 mm | 10.16 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No IS41LV16105B-60TI | ISSI | Datasheet | - | - | Min: 1 Mult: 1 | YES | 44 | 60 ns | INTEGRATED SILICON SOLUTION INC | Integrated Silicon Solution Inc | IS41LV16105B-60TI | 3 | 1048576 words | 1000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TSOP2 | 0.400 INCH, PLASTIC, TSOP2-44/50 | TSOP44/50,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | TSOP2 | NOT SPECIFIED | 5.77 | No | 3.3 V | e0 | EAR99 | Tin/Lead (Sn/Pb) | RAS ONLY/CAS BEFORE RAS/HIDDEN/AUTO REFRESH | 8542.32.00.02 | DRAMs | CMOS | DUAL | GULL WING | NOT SPECIFIED | 1 | 0.8 mm | unknown | 44 | R-PDSO-G44 | Not Qualified | 3.6 V | 3.3 V | INDUSTRIAL | 3 V | 1 | ASYNCHRONOUS | 0.16 mA | 1MX16 | 3-STATE | 1.2 mm | 16 | 0.002 A | 16777216 bit | COMMON | FAST PAGE DRAM | 1024 | FAST PAGE | NO | 20.95 mm | 10.16 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No AS7C4098A-12TC | Alliance Memory | Datasheet | - | - | Min: 1 Mult: 1 | YES | 44 | 12 ns | ALLIANCE MEMORY INC | Alliance Memory Inc | AS7C4098A-12TC | 262144 words | 256000 | 70 °C | PLASTIC/EPOXY | TSOP2 | TSOP2, TSOP44,.46,32 | TSOP44,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | TSOP2 | 30 | 5.58 | No | 5 V | e0 | No | 3A991.B.2.A | TIN LEAD | 8542.32.00.41 | SRAMs | CMOS | DUAL | GULL WING | 240 | 1 | 0.8 mm | compliant | 44 | R-PDSO-G44 | Not Qualified | 5.5 V | 5 V | COMMERCIAL | 4.5 V | ASYNCHRONOUS | 0.16 mA | 256KX16 | 3-STATE | 1.2 mm | 16 | 0.01 A | 4194304 bit | PARALLEL | COMMON | STANDARD SRAM | 4.5 V | 18.415 mm | 10.16 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No M12L128168A-6TG | Elite Semiconductor Memory Technology Inc | Datasheet | - | - | Min: 1 Mult: 1 | gold-plated | YES | 88 | 54 | 5.4 ns | 166 MHz | socket | 2x44 | 2.54mm | THT | 8.05 g | ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC | female | 8388608 words | 8000000 | 70 °C | PLASTIC/EPOXY | TSOP2 | TSOP2, TSOP54,.46,32 | TSOP54,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Contact Manufacturer | TSOP2 | Yes | 2.54mm | straight | 3.3 V | pin strips | -40...163°C | EAR99 | AUTO/SELF REFRESH | 8542.32.00.02 | DUAL | GULL WING | 1 | 0.8 mm | unknown | 1.5A | 54 | R-PDSO-G54 | Not Qualified | 3.6 V | COMMERCIAL | 3 V | 1 | SYNCHRONOUS | 0.16 mA | 8MX16 | 3-STATE | 1.2 mm | 16 | 0.002 A | 134217728 bit | COMMON | SYNCHRONOUS DRAM | 60V | 4096 | 1,2,4,8,FP | 1,2,4,8 | FOUR BANK PAGE BURST | beryllium copper | YES | 22.22 mm | 10.16 mm | 0.75µm | UL94V-0 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr Part No TC59SM816CFT-75 | Toshiba America Electronic Components | Datasheet | - | - | Min: 1 Mult: 1 | YES | 54 | 5.4 ns | 133 MHz | TOSHIBA CORP | 16777216 words | 16000000 | 70 °C | PLASTIC/EPOXY | TSOP2 | TSOP2, TSOP54,.46,32 | TSOP54,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | TSOP2 | No | 3.3 V | e0 | EAR99 | Tin/Lead (Sn/Pb) | AUTO/SELF REFRESH | 8542.32.00.24 | DUAL | GULL WING | 1 | 0.8 mm | unknown | 54 | R-PDSO-G54 | Not Qualified | 3.6 V | COMMERCIAL | 3 V | 1 | SYNCHRONOUS | 0.16 mA | 16MX16 | 3-STATE | 1.2 mm | 16 | 0.001 A | 268435456 bit | COMMON | SYNCHRONOUS DRAM | 8192 | 1,2,4,8,FP | 1,2,4,8 | FOUR BANK PAGE BURST | YES | 22.22 mm | 10.16 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr Part No TMS2532-45JL | Texas Instruments | Datasheet | - | - | Min: 1 Mult: 1 | NO | 24 | 450 ns | TEXAS INSTRUMENTS INC | 4096 words | 4000 | 70 °C | CERAMIC, METAL-SEALED COFIRED | DIP | DIP, | RECTANGULAR | IN-LINE | Obsolete | DIP | No | 5 V | EAR99 | 8542.32.00.61 | DUAL | THROUGH-HOLE | NOT SPECIFIED | 1 | not_compliant | NOT SPECIFIED | 24 | R-CDIP-T24 | 5.25 V | COMMERCIAL | 4.75 V | ASYNCHRONOUS | 0.16 mA | 4KX8 | 8 | 32768 bit | PARALLEL | UVPROM CARD | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr Part No IDT7164S30L28 | Integrated Device Technology Inc | Datasheet | - | - | Min: 1 Mult: 1 | YES | 28 | 29 ns | INTEGRATED DEVICE TECHNOLOGY INC | 8192 words | 8000 | 70 °C | CERAMIC, METAL-SEALED COFIRED | QCCN | LCC-28 | LCC28,.45SQ | SQUARE | CHIP CARRIER | Obsolete | QLCC | No | 5 V | e0 | No | EAR99 | TIN LEAD | 8542.32.00.41 | QUAD | NO LEAD | 1 | 1.27 mm | not_compliant | 28 | S-CQCC-N28 | Not Qualified | 5.5 V | COMMERCIAL | 4.5 V | 1 | ASYNCHRONOUS | 0.16 mA | 8KX8 | 3-STATE | 2.54 mm | 8 | 0.015 A | 65536 bit | PARALLEL | COMMON | STANDARD SRAM | 4.5 V | YES | 11.43 mm | 11.43 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No IS45S83200D-7TLA1 | Integrated Silicon Solution Inc | Datasheet | - | - | Min: 1 Mult: 1 | YES | 54 | 5.4 ns | 143 MHz | INTEGRATED SILICON SOLUTION INC | 33554432 words | 32000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TSOP2 | TSOP2, TSOP54,.46,32 | TSOP54,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | TSOP2 | Yes | 3.3 V | e3 | Yes | EAR99 | MATTE TIN | AUTO/SELF REFRESH | 8542.32.00.24 | DUAL | GULL WING | 260 | 1 | 0.8 mm | compliant | 10 | 54 | R-PDSO-G54 | Not Qualified | 3.6 V | INDUSTRIAL | 3 V | 1 | SYNCHRONOUS | 0.16 mA | 32MX8 | 3-STATE | 1.2 mm | 8 | 0.003 A | 268435456 bit | COMMON | SYNCHRONOUS DRAM | 8192 | 1,2,4,8,FP | 1,2,4,8 | FOUR BANK PAGE BURST | YES | 22.22 mm | 10.16 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr Part No P4C188-15PC | Pyramid Semiconductor Corporation | Datasheet | - | - | Min: 1 Mult: 1 | NO | 22 | 15 ns | PYRAMID SEMICONDUCTOR CORP | 16384 words | 16000 | 70 °C | PLASTIC/EPOXY | DIP | 0.300 INCH, PLASTIC, DIP-22 | DIP22,.3 | RECTANGULAR | IN-LINE | Active | DIP | No | 5 V | e0 | No | EAR99 | TIN LEAD | 8542.32.00.41 | DUAL | THROUGH-HOLE | 1 | 2.54 mm | compliant | 22 | R-PDIP-T22 | Not Qualified | 5.5 V | COMMERCIAL | 4.5 V | ASYNCHRONOUS | 0.16 mA | 16KX4 | 3-STATE | 5.334 mm | 4 | 0.015 A | 65536 bit | PARALLEL | COMMON | STANDARD SRAM | 4.5 V | 29.337 mm | 7.62 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr Part No IS41C16100S-50K | Integrated Silicon Solution Inc | Datasheet | - | - | Min: 1 Mult: 1 | YES | 42 | 50 ns | INTEGRATED SILICON SOLUTION INC | 1048576 words | 1000000 | 70 °C | PLASTIC/EPOXY | SOJ | SOJ-42 | SOJ42,.44 | RECTANGULAR | SMALL OUTLINE | Obsolete | SOJ | No | 5 V | e0 | No | EAR99 | Tin/Lead (Sn/Pb) | RAS ONLY/CAS BEFORE RAS/HIDDEN /SELF REFRESH | 8542.32.00.02 | DUAL | J BEND | 1 | unknown | 42 | R-PDSO-J42 | Not Qualified | 5.5 V | COMMERCIAL | 4.5 V | 1 | ASYNCHRONOUS | 0.16 mA | 1MX16 | 3-STATE | 16 | 0.001 A | 16777216 bit | COMMON | EDO DRAM | 1024 | FAST PAGE WITH EDO | 3 | YES | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No KM48V8100J-6 | Samsung Semiconductor | Datasheet | - | - | Min: 1 Mult: 1 | YES | 34 | 60 ns | SAMSUNG SEMICONDUCTOR INC | 8388608 words | 8000000 | 70 °C | PLASTIC/EPOXY | SOJ | SOJ, SOJ34,.54 | SOJ34,.54 | RECTANGULAR | SMALL OUTLINE | Obsolete | SOJ | No | 3.3 V | e0 | EAR99 | Tin/Lead (Sn/Pb) | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | 8542.32.00.02 | DUAL | J BEND | 1 | 1.27 mm | unknown | 34 | R-PDSO-J34 | Not Qualified | 3.6 V | COMMERCIAL | 3 V | 1 | ASYNCHRONOUS | 0.16 mA | 8MX8 | 3-STATE | 3.76 mm | 8 | 0.0005 A | 67108864 bit | COMMON | FAST PAGE DRAM | 4096 | FAST PAGE | NO | 22.23 mm | 12.7 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr Part No KM416C1200BJ-5 | Samsung Semiconductor | Datasheet | - | - | Min: 1 Mult: 1 | YES | 42 | 50 ns | SAMSUNG SEMICONDUCTOR INC | 1048576 words | 1000000 | 70 °C | PLASTIC/EPOXY | SOJ | SOJ, SOJ42,.44 | SOJ42,.44 | RECTANGULAR | SMALL OUTLINE | Obsolete | SOJ | No | 5 V | e0 | No | EAR99 | TIN LEAD | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | 8542.32.00.02 | DUAL | J BEND | 1 | 1.27 mm | unknown | 42 | R-PDSO-J42 | Not Qualified | 5.5 V | COMMERCIAL | 4.5 V | 1 | ASYNCHRONOUS | 0.16 mA | 1MX16 | 3-STATE | 3.76 mm | 16 | 0.001 A | 16777216 bit | COMMON | FAST PAGE DRAM | 1024 | FAST PAGE | NO | 27.31 mm | 10.16 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr Part No IDT7165S45TCB | Integrated Device Technology Inc | Datasheet | - | - | Min: 1 Mult: 1 | NO | 28 | 45 ns | INTEGRATED DEVICE TECHNOLOGY INC | 8192 words | 8000 | 125 °C | -55 °C | CERAMIC, METAL-SEALED COFIRED | DIP | 0.300 INCH, THIN, SIDE BRAZED, DIP-28 | DIP28,.3 | RECTANGULAR | IN-LINE | Obsolete | DIP | No | 5 V | e0 | No | 3A001.A.2.C | TIN LEAD | 8542.32.00.41 | DUAL | THROUGH-HOLE | 1 | 2.54 mm | not_compliant | 28 | R-CDIP-T28 | Not Qualified | 5.5 V | MILITARY | 4.5 V | 1 | ASYNCHRONOUS | 0.16 mA | 8KX8 | 3-STATE | 5.08 mm | 8 | 0.02 A | 65536 bit | 38535Q/M;38534H;883B | PARALLEL | COMMON | STANDARD SRAM | 4.5 V | YES | 35.56 mm | 7.62 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No IS42R16320F-7TLI | Integrated Silicon Solution Inc | Datasheet | - | - | Min: 1 Mult: 1 | YES | 54 | 5.4 ns | 143 MHz | INTEGRATED SILICON SOLUTION INC | 33554432 words | 32000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TSOP2 | TSOP2, TSOP54,.46,32 | TSOP54,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Active | Yes | 2.5 V | EAR99 | PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH | 8542.32.00.28 | DUAL | GULL WING | 1 | 0.8 mm | compliant | R-PDSO-G54 | Not Qualified | 3.6 V | INDUSTRIAL | 2.3 V | 1 | SYNCHRONOUS | 0.16 mA | 32MX16 | 3-STATE | 1.2 mm | 16 | 0.004 A | 536870912 bit | COMMON | SYNCHRONOUS DRAM | 8192 | 1,2,4,8,FP | 1,2,4,8 | FOUR BANK PAGE BURST | YES | 22.22 mm | 10.16 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr Part No M5M5V4R08J-15 | Mitsubishi Electric | Datasheet | - | - | Min: 1 Mult: 1 | YES | 36 | 15 ns | MITSUBISHI ELECTRIC CORP | 524288 words | 512000 | 70 °C | PLASTIC/EPOXY | SOJ | SOJ, SOJ36,.44 | SOJ36,.44 | RECTANGULAR | SMALL OUTLINE | Obsolete | SOJ | No | 3.3 V | e0 | 3A991.B.2.A | Tin/Lead (Sn/Pb) | 8542.32.00.41 | DUAL | J BEND | 1 | 1.27 mm | unknown | 36 | R-PDSO-J36 | Not Qualified | 3.63 V | COMMERCIAL | 3.135 V | ASYNCHRONOUS | 0.16 mA | 512KX8 | 3-STATE | 8 | 0.01 A | 4194304 bit | PARALLEL | COMMON | STANDARD SRAM | 3.14 V |
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MT5C2568C-25/883C
Micross
Package:Memory
Price: please inquire
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CY7C1020-15ZC
Cypress Semiconductor
Package:Memory
Price: please inquire
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W9725G6JB-18
Winbond
Package:Memory
Price: please inquire
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AS7C34098A-12JI
Alliance Memory
Package:Memory
Price: please inquire
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AS7C32096A-12TI
Alliance Memory
Package:Memory
Price: please inquire
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IDT71V016SA10PHG
Renesas
Package:Memory
Price: please inquire
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IS41LV16105B-60TI
ISSI
Package:Memory
Price: please inquire
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AS7C4098A-12TC
Alliance Memory
Package:Memory
Price: please inquire
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M12L128168A-6TG
Elite Semiconductor Memory Technology Inc
Package:Memory
Price: please inquire
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TC59SM816CFT-75
Toshiba America Electronic Components
Package:Memory
Price: please inquire
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TMS2532-45JL
Texas Instruments
Package:Memory
Price: please inquire
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IDT7164S30L28
Integrated Device Technology Inc
Package:Memory
Price: please inquire
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IS45S83200D-7TLA1
Integrated Silicon Solution Inc
Package:Memory
Price: please inquire
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P4C188-15PC
Pyramid Semiconductor Corporation
Package:Memory
Price: please inquire
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IS41C16100S-50K
Integrated Silicon Solution Inc
Package:Memory
Price: please inquire
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KM48V8100J-6
Samsung Semiconductor
Package:Memory
Price: please inquire
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KM416C1200BJ-5
Samsung Semiconductor
Package:Memory
Price: please inquire
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IDT7165S45TCB
Integrated Device Technology Inc
Package:Memory
Price: please inquire
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IS42R16320F-7TLI
Integrated Silicon Solution Inc
Package:Memory
Price: please inquire
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M5M5V4R08J-15
Mitsubishi Electric
Package:Memory
Price: please inquire