The category is 'Memory'
Memory (16)
- All Manufacturers
- Access Time-Max
- I/O Type
- Ihs Manufacturer
- JESD-30 Code
- JESD-609 Code
- Memory Density
- Memory IC Type
- Memory Width
- Number of Terminals
- Number of Words
- Operating Temperature-Max
- Supply Current-Max
- Supply Current-Max:
0.165 mA
Image | Part Number | Manufacturer | Datasheet | Availability | Pricing(USD) | Quantity | RoHS | Factory Lead Time | Mount | Mounting Type | Package / Case | Surface Mount | Number of Pins | Supplier Device Package | Number of Terminals | Access Time-Max | Base Product Number | Clock Frequency-Max (fCLK) | Data Rate Architecture | Ihs Manufacturer | Manufacturer | Manufacturer Package Code | Manufacturer Part Number | Maximum Operating Supply Voltage | Memory Types | Mfr | Minimum Operating Supply Voltage | Moisture Sensitivity Levels | Mounting | Number of I/O Lines | Number of Words | Number of Words Code | Operating Temperature-Max | Operating Temperature-Min | Package | Package Body Material | Package Code | Package Description | Package Equivalence Code | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Product Status | Reflow Temperature-Max (s) | Risk Rank | RoHS | Rohs Code | Supplier Package | Supply Voltage-Nom (Vsup) | Timing Type | Typical Operating Supply Voltage | Usage Level | Operating Temperature | Series | JESD-609 Code | Pbfree Code | ECCN Code | Terminal Finish | Max Operating Temperature | Min Operating Temperature | Additional Feature | HTS Code | Subcategory | Technology | Voltage - Supply | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Terminal Pitch | Reach Compliance Code | Time@Peak Reflow Temperature-Max (s) | Pin Count | JESD-30 Code | Qualification Status | Brand Name | Operating Supply Voltage | Supply Voltage-Max (Vsup) | Power Supplies | Temperature Grade | Supply Voltage-Min (Vsup) | Interface | Max Supply Voltage | Min Supply Voltage | Memory Size | Number of Ports | Nominal Supply Current | Operating Mode | Supply Current-Max | Access Time | Memory Format | Memory Interface | Architecture | Organization | Output Characteristics | Seated Height-Max | Memory Width | Write Cycle Time - Word, Page | Address Bus Width | Density | Standby Current-Max | Memory Density | Screening Level | Parallel/Serial | I/O Type | Sync/Async | Word Size | Memory IC Type | Standby Voltage-Min | Output Enable | Refresh Cycles | Sequential Burst Length | Interleaved Burst Length | Access Mode | Self Refresh | Memory Organization | Length | Width | Thickness | Radiation Hardening | Lead Free |
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![]() | Mfr Part No CY7C025AV-25AC | Cypress Semiconductor | Datasheet | - | - | Min: 1 Mult: 1 | 1 Week | Surface Mount | 100-LQFP | YES | 100-TQFP (14x14) | 100 | 25 ns | CY7C025 | CYPRESS SEMICONDUCTOR CORP | Cypress Semiconductor | CY7C025AV-25AC | Volatile | Cypress Semiconductor Corp | 3 | 8192 words | 8000 | 70 °C | Bulk | PLASTIC/EPOXY | LFQFP | PLASTIC, MS-026, TQFP-100 | QFP100,.63SQ,20 | SQUARE | FLATPACK, LOW PROFILE, FINE PITCH | Obsolete | QFP | Active | NOT SPECIFIED | 5.73 | No | 3.3 V | 0°C ~ 70°C (TA) | - | e0 | EAR99 | Tin/Lead (Sn/Pb) | FLOW-THROUGH | 8542.32.00.41 | SRAMs | SRAM - Dual Port, Asynchronous | 3V ~ 3.6V | QUAD | GULL WING | 235 | 1 | 0.5 mm | not_compliant | 100 | S-PQFP-G100 | Not Qualified | 3.6 V | 3.3 V | COMMERCIAL | 3 V | 128Kbit | 2 | ASYNCHRONOUS | 0.165 mA | 25 ns | SRAM | Parallel | 8KX16 | 3-STATE | 1.6 mm | 16 | 25ns | 0.00005 A | 131072 bit | PARALLEL | COMMON | DUAL-PORT SRAM | 2 V | 8K x 16 | 14 mm | 14 mm | |||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No IDT70V05L25PF | Renesas | Datasheet | - | - | Min: 1 Mult: 1 | YES | 64 | 25 ns | INTEGRATED DEVICE TECHNOLOGY INC | Integrated Device Technology Inc | IDT70V05L25PF | RAM, SRAM | 3 | 8192 words | 8000 | 70 °C | PLASTIC/EPOXY | LQFP | 14 X 14 MM, 1.40 MM HEIGHT, TQFP-64 | QFP64,.66SQ,32 | SQUARE | FLATPACK, LOW PROFILE | Obsolete | QFP | 20 | 7.74 | Non-Compliant | No | 3.3 V | e0 | No | EAR99 | Tin/Lead (Sn85Pb15) | 70 °C | 0 °C | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN | 8542.32.00.41 | SRAMs | CMOS | QUAD | GULL WING | 240 | 1 | 0.8 mm | not_compliant | 64 | S-PQFP-G64 | Not Qualified | 3.6 V | 3.3 V | COMMERCIAL | 3 V | Parallel | 2 | ASYNCHRONOUS | 0.165 mA | 8KX8 | 3-STATE | 1.6 mm | 8 | 0.0025 A | 65536 bit | PARALLEL | COMMON | DUAL-PORT SRAM | 3 V | 14 mm | 14 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No 70V25L25G | Renesas | Datasheet | - | - | Min: 1 Mult: 1 | Through Hole | NO | 84 | 84 | 25 ns | INTEGRATED DEVICE TECHNOLOGY INC | Integrated Device Technology Inc | GU84 | 70V25L25G | 1 | 8000 | 8000 | 70 °C | CERAMIC, METAL-SEALED COFIRED | PGA | 1.120 X 1.120 INCH, 0.160 INCH HEIGHT, CERAMIC, PGA-84 | PGA84M,11X11 | SQUARE | GRID ARRAY | Obsolete | PGA | NOT SPECIFIED | 5.14 | Yes | No | 3.3 V | e0 | No | EAR99 | Tin/Lead (Sn/Pb) | 70 °C | 0 °C | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN | 8542.32.00.41 | SRAMs | CMOS | PERPENDICULAR | PIN/PEG | 240 | 1 | 2.54 mm | not_compliant | 84 | S-CPGA-P84 | Not Qualified | Integrated Device Technology | 3.3 V | 3.6 V | 3.3 V | COMMERCIAL | 3 V | 3.6 V | 3 V | 2 | 165 mA | ASYNCHRONOUS | 0.165 mA | 25 ns | 8KX16 | 3-STATE | 5.207 mm | 16 | 26 b | 128 kb | 0.0025 A | 131072 bit | PARALLEL | COMMON | Asynchronous | 16 b | DUAL-PORT SRAM | 3 V | 27.9 mm | 27.9 mm | 3.68 mm | No | Contains Lead | |||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No VG3617161BT-8 | Vanguard International Semiconductor Corporation | Datasheet | - | - | Min: 1 Mult: 1 | YES | 50 | 6 ns | 125 MHz | VANGUARD INTERNATIONAL SEMICONDUCTOR CORP | 1048576 words | 1000000 | 70 °C | PLASTIC/EPOXY | TSOP2 | TSOP2, TSOP50,.46,32 | TSOP50,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | TSOP2 | No | 3.3 V | e0 | EAR99 | TIN LEAD | AUTO/SELF REFRESH | 8542.32.00.02 | DUAL | GULL WING | 1 | 0.8 mm | unknown | 50 | R-PDSO-G50 | Not Qualified | 3.6 V | COMMERCIAL | 3 V | 1 | SYNCHRONOUS | 0.165 mA | 1MX16 | 3-STATE | 1.2 mm | 16 | 0.0035 A | 16777216 bit | COMMON | SYNCHRONOUS DRAM | 2048 | 1,2,4,8,FP | 1,2,4,8 | DUAL BANK PAGE BURST | YES | 20.95 mm | 10.16 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No VG3617161DT-8 | Vanguard International Semiconductor Corporation | Datasheet | - | - | Min: 1 Mult: 1 | YES | 50 | 6 ns | 125 MHz | VANGUARD INTERNATIONAL SEMICONDUCTOR CORP | 1048576 words | 1000000 | 70 °C | PLASTIC/EPOXY | TSOP2 | TSOP2, TSOP50,.46,32 | TSOP50,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | TSOP2 | No | 3.3 V | e0 | EAR99 | TIN LEAD | AUTO/SELF REFRESH | 8542.32.00.02 | DUAL | GULL WING | 1 | 0.8 mm | unknown | 50 | R-PDSO-G50 | Not Qualified | 3.6 V | COMMERCIAL | 3 V | 1 | SYNCHRONOUS | 0.165 mA | 1MX16 | 3-STATE | 1.2 mm | 16 | 0.0035 A | 16777216 bit | COMMON | SYNCHRONOUS DRAM | 4096 | 1,2,4,8,FP | 1,2,4,8 | DUAL BANK PAGE BURST | YES | 20.95 mm | 10.16 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No MCM6726WJ12 | Motorola Mobility LLC | Datasheet | - | - | Min: 1 Mult: 1 | YES | 32 | 12 ns | MOTOROLA INC | 131072 words | 128000 | 70 °C | PLASTIC/EPOXY | SOJ | SOJ, SOJ32,.44 | SOJ32,.44 | RECTANGULAR | SMALL OUTLINE | Obsolete | SOJ | 5 V | e0 | 3A991.B.2.B | Tin/Lead (Sn/Pb) | 8542.32.00.41 | DUAL | J BEND | 1 | 1.27 mm | unknown | 32 | R-PDSO-J32 | Not Qualified | 5.5 V | COMMERCIAL | 4.5 V | 1 | ASYNCHRONOUS | 0.165 mA | 128KX8 | 3-STATE | 3.75 mm | 8 | 1048576 bit | PARALLEL | COMMON | STANDARD SRAM | YES | 20.96 mm | 10.16 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No K4S56163LF-XN75 | Samsung Semiconductor | Datasheet | - | - | Min: 1 Mult: 1 | YES | 54 | 5.4 ns | 133 MHz | SAMSUNG SEMICONDUCTOR INC | 16777216 words | 16000000 | 85 °C | -25 °C | PLASTIC/EPOXY | FBGA | BGA54,9X9,32 | SQUARE | GRID ARRAY, FINE PITCH | Active | No | e0 | EAR99 | Tin/Lead (Sn/Pb) | 8542.32.00.24 | BOTTOM | BALL | 0.8 mm | compliant | S-PBGA-B54 | Not Qualified | OTHER | 0.165 mA | 16MX16 | 3-STATE | 16 | 0.0005 A | 268435456 bit | COMMON | SYNCHRONOUS DRAM | 8192 | 1,2,4,8,FP | 1,2,4,8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No H5PS5182FFP-Y5 | SK Hynix Inc | Datasheet | - | - | Min: 1 Mult: 1 | YES | 60 | 0.45 ns | 333 MHz | SK HYNIX INC | 67108864 words | 64000000 | 95 °C | PLASTIC/EPOXY | TFBGA | TFBGA, BGA60,9X11,32 | BGA60,9X11,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | BGA | Yes | 1.8 V | e1 | EAR99 | Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5) | AUTO/SELF REFRESH | 8542.32.00.28 | BOTTOM | BALL | 260 | 1 | 0.8 mm | compliant | 20 | 60 | R-PBGA-B60 | Not Qualified | 1.9 V | OTHER | 1.7 V | 1 | SYNCHRONOUS | 0.165 mA | 64MX8 | 3-STATE | 1.2 mm | 8 | 0.008 A | 536870912 bit | COMMON | DDR2 DRAM | 8192 | 4,8 | 4,8 | FOUR BANK PAGE BURST | YES | 10.5 mm | 10 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No K4S56163LC-RL75 | Samsung Semiconductor | Datasheet | - | - | Min: 1 Mult: 1 | YES | 54 | 5.4 ns | 133 MHz | SAMSUNG SEMICONDUCTOR INC | 16777216 words | 16000000 | 70 °C | -25 °C | PLASTIC/EPOXY | VFBGA | VFBGA, BGA54,9X9,32 | BGA54,9X9,32 | RECTANGULAR | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | Obsolete | BGA | No | 2.5 V | e0 | EAR99 | TIN LEAD | AUTO/SELF REFRESH | 8542.32.00.24 | BOTTOM | BALL | 1 | 0.8 mm | compliant | 54 | R-PBGA-B54 | Not Qualified | 2.7 V | OTHER | 2.3 V | 1 | SYNCHRONOUS | 0.165 mA | 16MX16 | 3-STATE | 1 mm | 16 | 0.0005 A | 268435456 bit | COMMON | SYNCHRONOUS DRAM | 8192 | 1,2,4,8,FP | 1,2,4,8 | FOUR BANK PAGE BURST | YES | 15.1 mm | 8.1 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No GS8321Z36AD-150IVT | GSI | Datasheet | - | - | Min: 1 Mult: 1 | 8 Weeks | YES | 165 | 7.5 ns | 150 MHz | SDR | GSI TECHNOLOGY | GSI Technology | GS8321Z36AD-150IVT | 2, 2.7 V | 1.7, 2.3 V | Surface Mount | 36 Bit | 1 MWords | 1000000 | 85 °C | -40 °C | PLASTIC/EPOXY | LBGA | LBGA, BGA165,11X15,40 | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | Active | BGA | NOT SPECIFIED | 5.16 | Non-Compliant | No | FBGA | 1.8 V | Synchronous | 1.8, 2.5 V | Industrial grade | -40 to 100 °C | e0 | No | 3A991.B.2.B | Tin/Lead (Sn/Pb) | ALSO OPERATES AT 2.5V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH | 8542.32.00.41 | SRAMs | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 1 mm | compliant | 165 | R-PBGA-B165 | Not Qualified | 2 V | 1.8/2.5 V | INDUSTRIAL | 1.7 V | 4 | SYNCHRONOUS | 0.165 mA | Flow-Through/Pipelined | 1MX36 | 3-STATE | 1.4 mm | 36 | 36 Mbit | 0.04 A | 37748736 bit | Industrial | PARALLEL | COMMON | ZBT SRAM | 1.7 V | 15 mm | 13 mm | ||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No M5M44260AJ-7 | Mitsubishi Electric | Datasheet | - | - | Min: 1 Mult: 1 | YES | 40 | 70 ns | MITSUBISHI ELECTRIC CORP | 262144 words | 256000 | 70 °C | PLASTIC/EPOXY | SOJ | SOJ, SOJ40,.44 | SOJ40,.44 | RECTANGULAR | SMALL OUTLINE | Obsolete | SOJ | No | 5 V | e0 | No | EAR99 | TIN LEAD | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | 8542.32.00.02 | DUAL | J BEND | 1 | 1.27 mm | unknown | 40 | R-PDSO-J40 | Not Qualified | 5.5 V | COMMERCIAL | 4.5 V | 1 | ASYNCHRONOUS | 0.165 mA | 256KX16 | 3-STATE | 3.55 mm | 16 | 0.001 A | 4194304 bit | COMMON | FAST PAGE DRAM | 512 | FAST PAGE | NO | 26.04 mm | 10.16 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No MCM6726WJ12 | Freescale Semiconductor | Datasheet | - | - | Min: 1 Mult: 1 | YES | 32 | 12 ns | MOTOROLA SEMICONDUCTOR PRODUCTS | 131072 words | 128000 | 70 °C | PLASTIC/EPOXY | SOJ | SOJ, SOJ32,.44 | SOJ32,.44 | RECTANGULAR | SMALL OUTLINE | Obsolete | No | 5 V | e0 | Tin/Lead (Sn/Pb) | DUAL | J BEND | 1.27 mm | unknown | R-PDSO-J32 | Not Qualified | 5 V | COMMERCIAL | ASYNCHRONOUS | 0.165 mA | 128KX8 | 3-STATE | 8 | 1048576 bit | PARALLEL | COMMON | STANDARD SRAM | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No IDT70V24L25PFG | Integrated Device Technology Inc | Datasheet | - | - | Min: 1 Mult: 1 | YES | 100 | 25 ns | INTEGRATED DEVICE TECHNOLOGY INC | 3 | 4096 words | 4000 | 70 °C | PLASTIC/EPOXY | LFQFP | LFQFP, QFP100,.63SQ,20 | QFP100,.63SQ,20 | SQUARE | FLATPACK, LOW PROFILE, FINE PITCH | Transferred | QFP | Yes | 3.3 V | e3 | Yes | EAR99 | Matte Tin (Sn) - annealed | 8542.32.00.41 | QUAD | GULL WING | 260 | 1 | 0.5 mm | compliant | 30 | 100 | S-PQFP-G100 | Not Qualified | 3.6 V | COMMERCIAL | 3 V | 2 | ASYNCHRONOUS | 0.165 mA | 4KX16 | 3-STATE | 1.6 mm | 16 | 0.0025 A | 65536 bit | PARALLEL | COMMON | MULTI-PORT SRAM | 3 V | 14 mm | 14 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No K6R4016V1C-JI12 | Samsung Semiconductor | Datasheet | - | - | Min: 1 Mult: 1 | YES | 44 | 12 ns | SAMSUNG SEMICONDUCTOR INC | 262144 words | 256000 | 85 °C | -40 °C | PLASTIC/EPOXY | SOJ | SOJ, SOJ44,.44 | SOJ44,.44 | RECTANGULAR | SMALL OUTLINE | Obsolete | SOJ | No | 3.3 V | e0 | No | 3A991.B.2.A | TIN LEAD | 8542.32.00.41 | DUAL | J BEND | 1 | 1.27 mm | unknown | 44 | R-PDSO-J44 | Not Qualified | 3.6 V | INDUSTRIAL | 3 V | ASYNCHRONOUS | 0.165 mA | 256KX16 | 3-STATE | 3.76 mm | 16 | 0.0007 A | 4194304 bit | PARALLEL | COMMON | STANDARD SRAM | 2 V | 28.58 mm | 10.16 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No CY7C038V-25AC | Cypress Semiconductor | Datasheet | - | - | Min: 1 Mult: 1 | YES | 100 | 25 ns | CYPRESS SEMICONDUCTOR CORP | Cypress Semiconductor | CY7C038V-25AC | 3 | 65536 words | 64000 | 70 °C | PLASTIC/EPOXY | LFQFP | PLASTIC, MS-026, TQFP-100 | QFP100,.63SQ,20 | SQUARE | FLATPACK, LOW PROFILE, FINE PITCH | Obsolete | QFP | 30 | 5.81 | No | 3.3 V | e0 | 3A991.B.2.A | Tin/Lead (Sn/Pb) | INTERRUPT FLAG | 8542.32.00.41 | SRAMs | CMOS | QUAD | GULL WING | 240 | 1 | 0.5 mm | not_compliant | 100 | S-PQFP-G100 | Not Qualified | 3.6 V | 3.3 V | COMMERCIAL | 3 V | 2 | ASYNCHRONOUS | 0.165 mA | 64KX18 | 3-STATE | 1.6 mm | 18 | 0.00005 A | 1179648 bit | PARALLEL | COMMON | DUAL-PORT SRAM | 2 V | 14 mm | 14 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No CY7C144AV-25ACT | Cypress Semiconductor | Datasheet | - | - | Min: 1 Mult: 1 | YES | 64 | 25 ns | CYPRESS SEMICONDUCTOR CORP | Cypress Semiconductor | CY7C144AV-25ACT | 3 | 8192 words | 8000 | 70 °C | PLASTIC/EPOXY | LQFP | 14 X 14 MM, 1.40 MM HEIGHT, PLASTIC, MS-026, TQFP-64 | QFP64,.66SQ,32 | SQUARE | FLATPACK, LOW PROFILE | Obsolete | QFP | NOT SPECIFIED | 5.84 | No | 3.3 V | e0 | EAR99 | TIN LEAD | 8542.32.00.41 | SRAMs | CMOS | QUAD | GULL WING | 235 | 1 | 0.8 mm | not_compliant | 64 | S-PQFP-G64 | Not Qualified | 3.6 V | 3.3 V | COMMERCIAL | 3 V | 2 | ASYNCHRONOUS | 0.165 mA | 8KX8 | 3-STATE | 1.6 mm | 8 | 0.00005 A | 65536 bit | PARALLEL | COMMON | DUAL-PORT SRAM | 2 V | 14 mm | 14 mm |
CY7C025AV-25AC
Cypress Semiconductor
Package:Memory
Price: please inquire
IDT70V05L25PF
Renesas
Package:Memory
Price: please inquire
70V25L25G
Renesas
Package:Memory
Price: please inquire
VG3617161BT-8
Vanguard International Semiconductor Corporation
Package:Memory
Price: please inquire
VG3617161DT-8
Vanguard International Semiconductor Corporation
Package:Memory
Price: please inquire
MCM6726WJ12
Motorola Mobility LLC
Package:Memory
Price: please inquire
K4S56163LF-XN75
Samsung Semiconductor
Package:Memory
Price: please inquire
H5PS5182FFP-Y5
SK Hynix Inc
Package:Memory
Price: please inquire
K4S56163LC-RL75
Samsung Semiconductor
Package:Memory
Price: please inquire
GS8321Z36AD-150IVT
GSI
Package:Memory
Price: please inquire
M5M44260AJ-7
Mitsubishi Electric
Package:Memory
Price: please inquire
MCM6726WJ12
Freescale Semiconductor
Package:Memory
Price: please inquire
IDT70V24L25PFG
Integrated Device Technology Inc
Package:Memory
Price: please inquire
K6R4016V1C-JI12
Samsung Semiconductor
Package:Memory
Price: please inquire
CY7C038V-25AC
Cypress Semiconductor
Package:Memory
Price: please inquire
CY7C144AV-25ACT
Cypress Semiconductor
Package:Memory
Price: please inquire
