The category is 'Memory'
Memory (46)
- All Manufacturers
- Access Time-Max
- Ihs Manufacturer
- JESD-30 Code
- Memory Density
- Memory IC Type
- Memory Width
- Number of Terminals
- Number of Words
- Number of Words Code
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- Package Code
- Supply Current-Max
- Supply Current-Max:
0.17 mA
Image | Part Number | Manufacturer | Datasheet | Availability | Pricing(USD) | Quantity | RoHS | Package / Case | Surface Mount | Number of Pins | Supplier Device Package | Number of Terminals | Access Time-Max | Approvals | Base Product Number | Clock Frequency-Max (fCLK) | EU RoHS | HTS | Ihs Manufacturer | Manufacturer | Manufacturer Part Number | Mfr | Moisture Sensitivity Levels | Mounting | Number of Words | Number of Words Code | Operating Temperature-Max | Operating Temperature-Min | Package | Package Body Material | Package Code | Package Description | Package Equivalence Code | Package Height | Package Length | Package Shape | Package Style | Package Width | Part Life Cycle Code | Part Package Code | PCB changed | Product Status | Reflow Temperature-Max (s) | Risk Rank | RoHS | Rohs Code | Standard Package Name | Supplier Package | Supply Voltage-Nom (Vsup) | Operating Temperature | Series | Size / Dimension | Tolerance | JESD-609 Code | Pbfree Code | Part Status | Number of Terminations | ECCN Code | Temperature Coefficient | Resistance | Terminal Finish | Max Operating Temperature | Min Operating Temperature | Composition | Power (Watts) | Additional Feature | HTS Code | Subcategory | Technology | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Terminal Pitch | Reach Compliance Code | Current Rating | Time@Peak Reflow Temperature-Max (s) | Pin Count | JESD-30 Code | Qualification Status | Operating Supply Voltage | Supply Voltage-Max (Vsup) | Power Supplies | Temperature Grade | Supply Voltage-Min (Vsup) | Number of Ports | Operating Mode | Supply Current-Max | Access Time | Data Bus Width | Organization | Output Characteristics | Seated Height-Max | Memory Width | Address Bus Width | Density | Standby Current-Max | Memory Density | Max Frequency | Screening Level | Parallel/Serial | I/O Type | Memory IC Type | Standby Voltage-Min | Output Enable | Refresh Cycles | Sequential Burst Length | Interleaved Burst Length | Access Mode | Features | Self Refresh | Mixed Memory Type | Height Seated (Max) | Length | Width | Radiation Hardening | Lead Free |
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 | Mfr Part No K4B1G1646G-BCH9 | Samsung | Datasheet | 724 | - | Min: 1 Mult: 1 | YES | 96 | 0.255 ns | 667 MHz | SAMSUNG SEMICONDUCTOR INC | Samsung Semiconductor | K4B1G1646G-BCH9 | 3 | 67108864 words | 64000000 | PLASTIC/EPOXY | FBGA | FBGA, BGA96,9X16,32 | BGA96,9X16,32 | RECTANGULAR | GRID ARRAY, FINE PITCH | Obsolete | NOT SPECIFIED | 8.58 | Yes | 1.5 V | e1 | Yes | Tin/Silver/Copper (Sn/Ag/Cu) | DRAMs | CMOS | BOTTOM | BALL | 225 | 0.8 mm | compliant | R-PBGA-B96 | Not Qualified | 1.5 V | 0.17 mA | 64MX16 | 3-STATE | 16 | 0.01 A | 1073741824 bit | COMMON | DDR DRAM | 8192 | 4,8 | 4,8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No MT47H16M16BG-37E | Micron | Datasheet | 568 | - | Min: 1 Mult: 1 | YES | 84 | 84 | 0.5 ns | 266 MHz | MICRON TECHNOLOGY INC | Micron Technology Inc | MT47H16M16BG-37E | 16777216 words | 16000000 | 85 °C | PLASTIC/EPOXY | LFBGA | LFBGA, BGA84,9X15,32 | BGA84,9X15,32 | RECTANGULAR | GRID ARRAY, LOW PROFILE, FINE PITCH | Obsolete | BGA | 30 | 5.81 | Compliant | Yes | 1.8 V | e1 | Yes | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | 85 °C | 0 °C | AUTO/SELF REFRESH | 8542.32.00.24 | DRAMs | CMOS | BOTTOM | BALL | 260 | 1 | 0.8 mm | compliant | 84 | R-PBGA-B84 | Not Qualified | 1.8 V | 1.9 V | 1.8 V | OTHER | 1.7 V | 1 | SYNCHRONOUS | 0.17 mA | 500 ps | 16 b | 16MX16 | 3-STATE | 1.3 mm | 16 | 15 b | 256 Mb | 0.005 A | 268435456 bit | 533 MHz | COMMON | DDR DRAM | 8192 | 4,8 | 4,8 | FOUR BANK PAGE BURST | YES | 14 mm | 8 mm | No | Lead Free | ||||||||||||||||||||||||||||||||||||||
| Mfr Part No W9712G6JB-25 | Winbond | Datasheet | 1337 | - | Min: 1 Mult: 1 | YES | 84 | 0.4 ns | 400 MHz | WINBOND ELECTRONICS CORP | Winbond Electronics Corp | W9712G6JB-25 | 8388608 words | 8000000 | 85 °C | PLASTIC/EPOXY | TFBGA | TFBGA, BGA84,9X15,32 | BGA84,9X15,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | BGA | NOT SPECIFIED | 5.67 | Yes | 1.8 V | EAR99 | AUTO/SELF REFRESH | 8542.32.00.02 | DRAMs | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 0.8 mm | compliant | 84 | R-PBGA-B84 | Not Qualified | 1.9 V | 1.8 V | OTHER | 1.7 V | 1 | SYNCHRONOUS | 0.17 mA | 8MX16 | 3-STATE | 1.2 mm | 16 | 0.005 A | 134217728 bit | COMMON | DDR DRAM | 4096 | 4,8 | 4,8 | FOUR BANK PAGE BURST | YES | 12.5 mm | 8 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No MR4A08BMYS35 | Everspin Technologies, Inc. | Datasheet | - | - | Min: 1 Mult: 1 | YES | 44 | 35 ns | Compliant | 8542.32.00.71 | EVERSPIN TECHNOLOGIES INC | Everspin Technologies | MR4A08BMYS35 | Surface Mount | 2097152 words | 2000000 | 125 °C | -40 °C | PLASTIC/EPOXY | TSOP2 | TSOP2, TSOP44,.46,32 | TSOP44,.46,32 | 1.05(Max) | 18.54(Max) | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | 10.29(Max) | Obsolete | TSOP2 | 44 | NOT SPECIFIED | 5.64 | Yes | SOP | TSOP | 3.3 V | Yes | Unconfirmed | EAR99 | 8542.32.00.71 | SRAMs | CMOS | DUAL | GULL WING | NOT SPECIFIED | 1 | 0.8 mm | compliant | 44 | R-PDSO-G44 | Not Qualified | 3.6 V | 3.3 V | AUTOMOTIVE | 3 V | ASYNCHRONOUS | 0.17 mA | 2MX8 | 1.2 mm | 8 | 0.014 A | 16777216 bit | MEMORY CIRCUIT | N/A | 18.41 mm | 10.16 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No IDT70V08L25PF | Renesas | Datasheet | - | - | Min: 1 Mult: 1 | YES | 100 | 25 ns | CE, CSA, UL | INTEGRATED DEVICE TECHNOLOGY INC | Cutler Hammer, Div of Eaton Corp | PDG33F0400E5ML | 3 | Panel | 65536 words | 64000 | 70 °C | PLASTIC/EPOXY | LFQFP | 14 X 14 MM, 1.40 MM HEIGHT, TQFP-100 | QFP100,.63SQ,20 | SQUARE | FLATPACK, LOW PROFILE, FINE PITCH | Obsolete | QFP | 20 | 7.89 | No | 3.3 V | e0 | No | EAR99 | Tin/Lead (Sn85Pb15) | SEMAPHORE | 8542.32.00.41 | SRAMs | CMOS | QUAD | GULL WING | 240 | 1 | 0.5 mm | not_compliant | 400 A | 100 | S-PQFP-G100 | Not Qualified | 3.6 V | 3.3 V | COMMERCIAL | 3 V | 2 | ASYNCHRONOUS | 0.17 mA | 64KX8 | 3-STATE | 1.6 mm | 8 | 0.003 A | 524288 bit | PARALLEL | COMMON | DUAL-PORT SRAM | 3 V | 14 mm | 14 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No AS7C32098A-10TC | Alliance Memory | Datasheet | - | - | Min: 1 Mult: 1 | 0805 (2012 Metric) | YES | 0805 | 44 | 10 ns | RN732A | ALLIANCE MEMORY INC | Alliance Memory Inc | AS7C32098A-10TC | KOA Speer Electronics, Inc. | 131072 words | 128000 | 70 °C | Tape & Reel (TR) | PLASTIC/EPOXY | TSOP2 | TSOP2, TSOP44,.46,32 | TSOP44,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | TSOP2 | Obsolete | 30 | 5.49 | No | 3.3 V | -55°C ~ 155°C | RN73 | 0.079 L x 0.049 W (2.00mm x 1.25mm) | ±1% | e0 | No | 2 | 3A991.B.2.A | ±100ppm/°C | 569 kOhms | TIN LEAD | Thin Film | 0.1W, 1/10W | 8542.32.00.41 | SRAMs | CMOS | DUAL | GULL WING | 240 | 1 | 0.8 mm | compliant | 44 | R-PDSO-G44 | Not Qualified | 3.6 V | 3.3 V | COMMERCIAL | 3 V | ASYNCHRONOUS | 0.17 mA | 128KX16 | 3-STATE | 1.2 mm | 16 | 0.008 A | 2097152 bit | PARALLEL | COMMON | STANDARD SRAM | 3 V | Moisture Resistant | 0.024 (0.60mm) | 18.415 mm | 10.16 mm | |||||||||||||||||||||||||||||||||||||||
| Mfr Part No AS7C32096A-10TC | Alliance Memory | Datasheet | - | - | Min: 1 Mult: 1 | YES | 44 | 10 ns | ALLIANCE MEMORY INC | Brad Harrison | 35631 | 262144 words | 256000 | 70 °C | PLASTIC/EPOXY | TSOP2 | TSOP2, TSOP44,.46,32 | TSOP44,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | TSOP2 | 30 | 5.61 | No | 3.3 V | e0 | No | 3A991.B.2.A | TIN LEAD | 8542.32.00.41 | SRAMs | CMOS | DUAL | GULL WING | 240 | 1 | 0.8 mm | compliant | 44 | R-PDSO-G44 | Not Qualified | 3.6 V | 3/3.3 V | COMMERCIAL | 3 V | ASYNCHRONOUS | 0.17 mA | 256KX8 | 3-STATE | 1.2 mm | 8 | 0.008 A | 2097152 bit | PARALLEL | COMMON | STANDARD SRAM | 3 V | 18.415 mm | 10.16 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr Part No IS61SP25618-133TQ | Integrated Silicon Solution Inc | Datasheet | - | - | Min: 1 Mult: 1 | YES | 100 | 4 ns | 133 MHz | INTEGRATED SILICON SOLUTION INC | 262144 words | 256000 | 70 °C | PLASTIC/EPOXY | LQFP | TQFP-100 | QFP100,.63X.87 | RECTANGULAR | FLATPACK, LOW PROFILE | Obsolete | QFP | No | 3.3 V | e0 | No | 3A991.B.2.A | TIN LEAD | SELF-TIMED WRITE; BURST COUNTER; BYTE WRITE; LINEAR/INTERLEAVED BURST SEQUENCE | 8542.32.00.41 | QUAD | GULL WING | 1 | 0.65 mm | compliant | 100 | R-PQFP-G100 | Not Qualified | 3.63 V | COMMERCIAL | 3.135 V | SYNCHRONOUS | 0.17 mA | 256KX18 | 3-STATE | 1.6 mm | 18 | 0.015 A | 4718592 bit | PARALLEL | COMMON | CACHE SRAM | 3.14 V | 20 mm | 14 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No T2316160A-60S | TM Technology Inc | Datasheet | - | - | Min: 1 Mult: 1 | YES | 44 | 60 ns | TM TECHNOLOGY INC | 1048576 words | 1000000 | 70 °C | PLASTIC/EPOXY | TSOP2 | TSOP2, TSOP44/50,.46,32 | TSOP44/50,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Contact Manufacturer | 5 V | EAR99 | RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH | 8542.32.00.02 | DUAL | GULL WING | 1 | 0.8 mm | unknown | R-PDSO-G44 | Not Qualified | 5.5 V | COMMERCIAL | 4.5 V | 1 | ASYNCHRONOUS | 0.17 mA | 1MX16 | 3-STATE | 1.2 mm | 16 | 0.001 A | 16777216 bit | COMMON | EDO DRAM | 1024 | FAST PAGE | NO | 20.95 mm | 10.16 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr Part No HY57V561620FLT-H | SK Hynix Inc | Datasheet | - | - | Min: 1 Mult: 1 | YES | 54 | 5.4 ns | 133 MHz | SK HYNIX INC | 16777216 words | 16000000 | 70 °C | PLASTIC/EPOXY | TSOP2 | TSOP2, TSOP54,.46,32 | TSOP54,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | TSOP2 | No | 3.3 V | No | EAR99 | AUTO/SELF REFRESH | 8542.32.00.24 | DUAL | GULL WING | NOT SPECIFIED | 1 | 0.8 mm | compliant | NOT SPECIFIED | 54 | R-PDSO-G54 | Not Qualified | 3.6 V | COMMERCIAL | 3 V | 1 | SYNCHRONOUS | 0.17 mA | 16MX16 | 3-STATE | 1.2 mm | 16 | 0.001 A | 268435456 bit | COMMON | SYNCHRONOUS DRAM | 8192 | 1,2,4,8,FP | 1,2,4,8 | FOUR BANK PAGE BURST | YES | 22.22 mm | 10.16 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No NT5SV16M8CT-8B | Nanya Technology Corporation | Datasheet | - | - | Min: 1 Mult: 1 | YES | 54 | 6 ns | 125 MHz | NANYA TECHNOLOGY CORP | 16777216 words | 16000000 | 70 °C | PLASTIC/EPOXY | TSOP | TSOP, TSOP54,.46,32 | TSOP54,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Active | No | 3.3 V | e0 | EAR99 | Tin/Lead (Sn/Pb) | 8542.32.00.02 | DUAL | GULL WING | 0.8 mm | unknown | R-PDSO-G54 | Not Qualified | COMMERCIAL | 0.17 mA | 16MX8 | 3-STATE | 8 | 0.002 A | 134217728 bit | COMMON | SYNCHRONOUS DRAM | 4096 | 1,2,4,8 | 1,2,4,8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr Part No KM68V4002BJI-10 | Samsung Semiconductor | Datasheet | - | - | Min: 1 Mult: 1 | YES | 36 | 10 ns | SAMSUNG SEMICONDUCTOR INC | 524288 words | 512000 | 85 °C | -40 °C | PLASTIC/EPOXY | SOJ | SOJ, SOJ36,.44 | SOJ36,.44 | RECTANGULAR | SMALL OUTLINE | Obsolete | SOJ | No | 3.3 V | e0 | 3A991.B.2.A | TIN LEAD | 8542.32.00.41 | DUAL | J BEND | 1 | 1.27 mm | unknown | 36 | R-PDSO-J36 | Not Qualified | 3.6 V | INDUSTRIAL | 3 V | ASYNCHRONOUS | 0.17 mA | 512KX8 | 3-STATE | 3.76 mm | 8 | 0.01 A | 4194304 bit | PARALLEL | COMMON | STANDARD SRAM | 3 V | 23.5 mm | 10.16 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No MT5C2568C-20/883C | Micross Components | Datasheet | - | - | Min: 1 Mult: 1 | NO | 28 | 20 ns | MICROSS COMPONENTS | 32768 words | 32000 | 125 °C | -55 °C | CERAMIC, METAL-SEALED COFIRED | DIP | DIP, DIP28,.3 | DIP28,.3 | RECTANGULAR | IN-LINE | Active | DIP | No | 5 V | e0 | No | 3A001.A.2.C | TIN LEAD | TTL COMPATIBLE INPUT/OUTPUT; BATTERY BACKUP; LOW POWER STANDBY | 8542.32.00.41 | DUAL | THROUGH-HOLE | 1 | 2.54 mm | compliant | 28 | R-CDIP-T28 | Not Qualified | 5.5 V | MILITARY | 4.5 V | ASYNCHRONOUS | 0.17 mA | 32KX8 | 3-STATE | 5.715 mm | 8 | 0.02 A | 262144 bit | MIL-STD-883 | PARALLEL | COMMON | STANDARD SRAM | 4.5 V | 35.56 mm | 7.62 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr Part No TC55VZM216AFTN08 | Toshiba America Electronic Components | Datasheet | - | - | Min: 1 Mult: 1 | YES | 44 | 8 ns | TOSHIBA CORP | 262144 words | 256000 | 70 °C | PLASTIC/EPOXY | TSOP2 | TSOP2, TSOP44,.46,32 | TSOP44,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | TSOP2 | No | 3.3 V | e0 | 3A991.B.2.A | Tin/Lead (Sn/Pb) | 8542.32.00.41 | DUAL | GULL WING | 1 | 0.8 mm | unknown | 44 | R-PDSO-G44 | Not Qualified | 3.6 V | COMMERCIAL | 3 V | ASYNCHRONOUS | 0.17 mA | 256KX16 | 3-STATE | 1.2 mm | 16 | 0.004 A | 4194304 bit | PARALLEL | COMMON | CACHE SRAM | 3 V | 18.41 mm | 10.16 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No IS61SF12832-12TQ | Integrated Silicon Solution Inc | Datasheet | - | - | Min: 1 Mult: 1 | YES | 100 | 12 ns | INTEGRATED SILICON SOLUTION INC | 131072 words | 128000 | 70 °C | PLASTIC/EPOXY | LQFP | TQFP-100 | QFP100,.63X.87 | RECTANGULAR | FLATPACK, LOW PROFILE | Obsolete | QFP | No | 3.3 V | e0 | No | 3A991.B.2.A | TIN LEAD | INTERNAL SELF TIMED WRITE CYCLE; INDIVIDUAL BYTE WRITE CONTROL | 8542.32.00.41 | QUAD | GULL WING | 1 | 0.65 mm | compliant | 100 | R-PQFP-G100 | Not Qualified | 3.63 V | COMMERCIAL | 3.135 V | SYNCHRONOUS | 0.17 mA | 128KX32 | 3-STATE | 1.6 mm | 32 | 0.02 A | 4194304 bit | PARALLEL | COMMON | CACHE SRAM | 3.14 V | 20 mm | 14 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No IC61C1024L-15JI | Integrated Circuit Solution Inc | Datasheet | - | - | Min: 1 Mult: 1 | YES | 32 | 15 ns | INTEGRATED CIRCUIT SOLUTION INC | 131072 words | 128000 | 85 °C | -40 °C | PLASTIC/EPOXY | SOJ | SOJ, SOJ32,.34 | SOJ32,.34 | RECTANGULAR | SMALL OUTLINE | Transferred | No | 5 V | e0 | 3A991.B.2.B | Tin/Lead (Sn/Pb) | 8542.32.00.41 | DUAL | J BEND | 1.27 mm | unknown | R-PDSO-J32 | Not Qualified | INDUSTRIAL | ASYNCHRONOUS | 0.17 mA | 128KX8 | 3-STATE | 8 | 0.00075 A | 1048576 bit | PARALLEL | COMMON | STANDARD SRAM | 4.5 V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No CY7C109-45DMB | Cypress Semiconductor | Datasheet | - | - | Min: 1 Mult: 1 | NO | 32 | 45 ns | CYPRESS SEMICONDUCTOR CORP | 131072 words | 128000 | 125 °C | -55 °C | CERAMIC, METAL-SEALED COFIRED | DIP | 0.400 INCH, SIDE BRAZED, CERAMIC, DIP-32 | DIP32,.4 | RECTANGULAR | IN-LINE | Obsolete | DIP | No | 5 V | e0 | 3A001.A.2.C | Tin/Lead (Sn/Pb) | AUTOMATIC POWER-DOWN | 8542.32.00.41 | DUAL | THROUGH-HOLE | 1 | 2.54 mm | not_compliant | 32 | R-CDIP-T32 | Not Qualified | 5.5 V | MILITARY | 4.5 V | 1 | ASYNCHRONOUS | 0.17 mA | 128KX8 | 3-STATE | 5.08 mm | 8 | 0.05 A | 1048576 bit | 38535Q/M;38534H;883B | PARALLEL | COMMON | STANDARD SRAM | 4.5 V | YES | 40.4622 mm | 10.16 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr Part No IDT7164S25E | Integrated Device Technology Inc | Datasheet | - | - | Min: 1 Mult: 1 | YES | 28 | 25 ns | INTEGRATED DEVICE TECHNOLOGY INC | 8192 words | 8000 | 70 °C | CERAMIC, GLASS-SEALED | DFP | CERPACK-28 | FL28,.4 | RECTANGULAR | FLATPACK | Obsolete | DFP | No | 5 V | e0 | No | EAR99 | TIN LEAD | 8542.32.00.41 | DUAL | FLAT | 1 | 1.27 mm | not_compliant | 28 | R-GDFP-F28 | Not Qualified | 5.5 V | COMMERCIAL | 4.5 V | 1 | ASYNCHRONOUS | 0.17 mA | 8KX8 | 3-STATE | 2.921 mm | 8 | 0.015 A | 65536 bit | PARALLEL | COMMON | STANDARD SRAM | 4.5 V | YES | 18.288 mm | 12.446 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No 71V424S12Y | Renesas | Datasheet | - | - | Min: 1 Mult: 1 | YES | 36 | 12 ns | INTEGRATED DEVICE TECHNOLOGY INC | Integrated Device Technology Inc | 71V424S12Y | 3 | 524288 words | 512000 | 70 °C | PLASTIC/EPOXY | SOJ | SOJ36,.44 | RECTANGULAR | SMALL OUTLINE | Obsolete | NOT SPECIFIED | 5.91 | No | 3.3 V | e0 | No | Tin/Lead (Sn85Pb15) | SRAMs | CMOS | DUAL | J BEND | 225 | 1.27 mm | not_compliant | R-PDSO-J36 | Not Qualified | 3.3 V | COMMERCIAL | ASYNCHRONOUS | 0.17 mA | 512KX8 | 3-STATE | 8 | 0.02 A | 4194304 bit | PARALLEL | COMMON | STANDARD SRAM | 3 V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No 71V416L12PHI | Renesas | Datasheet | - | - | Min: 1 Mult: 1 | YES | 44 | 12 ns | INTEGRATED DEVICE TECHNOLOGY INC | Integrated Device Technology Inc | 71V416L12PHI | 3 | 262144 words | 256000 | 85 °C | -40 °C | PLASTIC/EPOXY | TSOP2 | 0.400 INCH, TSOP2-44 | TSOP44,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | TSOP2 | 5.36 | No | 3.3 V | e0 | 3A991.B.2.A | Tin/Lead (Sn85Pb15) | 8542.32.00.41 | SRAMs | CMOS | DUAL | GULL WING | 1 | 0.8 mm | not_compliant | 44 | R-PDSO-G44 | Not Qualified | 3.6 V | 3.3 V | INDUSTRIAL | 3 V | ASYNCHRONOUS | 0.17 mA | 256KX16 | 3-STATE | 1.2 mm | 16 | 0.01 A | 4194304 bit | PARALLEL | COMMON | STANDARD SRAM | 3 V | 18.41 mm | 10.16 mm |
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K4B1G1646G-BCH9
Samsung
Package:Memory
Price: please inquire
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MT47H16M16BG-37E
Micron
Package:Memory
Price: please inquire
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W9712G6JB-25
Winbond
Package:Memory
Price: please inquire
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MR4A08BMYS35
Everspin Technologies, Inc.
Package:Memory
Price: please inquire
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IDT70V08L25PF
Renesas
Package:Memory
Price: please inquire
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AS7C32098A-10TC
Alliance Memory
Package:Memory
Price: please inquire
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AS7C32096A-10TC
Alliance Memory
Package:Memory
Price: please inquire
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IS61SP25618-133TQ
Integrated Silicon Solution Inc
Package:Memory
Price: please inquire
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T2316160A-60S
TM Technology Inc
Package:Memory
Price: please inquire
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HY57V561620FLT-H
SK Hynix Inc
Package:Memory
Price: please inquire
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NT5SV16M8CT-8B
Nanya Technology Corporation
Package:Memory
Price: please inquire
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KM68V4002BJI-10
Samsung Semiconductor
Package:Memory
Price: please inquire
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MT5C2568C-20/883C
Micross Components
Package:Memory
Price: please inquire
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TC55VZM216AFTN08
Toshiba America Electronic Components
Package:Memory
Price: please inquire
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IS61SF12832-12TQ
Integrated Silicon Solution Inc
Package:Memory
Price: please inquire
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IC61C1024L-15JI
Integrated Circuit Solution Inc
Package:Memory
Price: please inquire
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CY7C109-45DMB
Cypress Semiconductor
Package:Memory
Price: please inquire
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IDT7164S25E
Integrated Device Technology Inc
Package:Memory
Price: please inquire
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71V424S12Y
Renesas
Package:Memory
Price: please inquire
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71V416L12PHI
Renesas
Package:Memory
Price: please inquire