The category is 'Memory'
Memory (46)
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- Access Time-Max
- Ihs Manufacturer
- JESD-30 Code
- Memory Density
- Memory IC Type
- Memory Width
- Number of Terminals
- Number of Words
- Number of Words Code
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- Package Code
- Supply Current-Max
- Supply Current-Max:
0.17 mA
Image | Part Number | Manufacturer | Datasheet | Availability | Pricing(USD) | Quantity | RoHS | Factory Lead Time | Mount | Surface Mount | Number of Pins | Number of Terminals | Access Time-Max | Clock Frequency-Max (fCLK) | Ihs Manufacturer | Manufacturer | Manufacturer Part Number | Moisture Sensitivity Levels | Number of Words | Number of Words Code | Operating Temperature-Max | Package Body Material | Package Code | Package Description | Package Equivalence Code | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Reflow Temperature-Max (s) | Risk Rank | RoHS | Rohs Code | Supply Voltage-Nom (Vsup) | JESD-609 Code | Pbfree Code | ECCN Code | Terminal Finish | Max Operating Temperature | Min Operating Temperature | Additional Feature | HTS Code | Subcategory | Technology | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Terminal Pitch | Reach Compliance Code | Pin Count | JESD-30 Code | Qualification Status | Operating Supply Voltage | Supply Voltage-Max (Vsup) | Power Supplies | Temperature Grade | Supply Voltage-Min (Vsup) | Max Supply Voltage | Min Supply Voltage | Number of Ports | Nominal Supply Current | Operating Mode | Supply Current-Max | Access Time | Data Bus Width | Organization | Output Characteristics | Seated Height-Max | Memory Width | Address Bus Width | Density | Standby Current-Max | Memory Density | Max Frequency | Parallel/Serial | I/O Type | Sync/Async | Word Size | Memory IC Type | Standby Voltage-Min | Output Enable | Refresh Cycles | Sequential Burst Length | Interleaved Burst Length | Access Mode | Self Refresh | Length | Width | Radiation Hardening | Lead Free |
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![]() | Mfr Part No CY7C1020-12VC | Cypress Semiconductor | Datasheet | 508 | - | Min: 1 Mult: 1 | Surface Mount | YES | 44 | 44 | 12 ns | CYPRESS SEMICONDUCTOR CORP | Cypress Semiconductor | CY7C1020-12VC | 1 | 32000 | 32000 | 70 °C | PLASTIC/EPOXY | SOJ | 0.400 INCH, PLASTIC, SOJ-44 | SOJ44,.44 | RECTANGULAR | SMALL OUTLINE | Obsolete | SOJ | 30 | 8.48 | Compliant | No | 5 V | e0 | 3A991.B.2.B | Tin/Lead (Sn/Pb) | 70 °C | 0 °C | AUTOMATIC POWER-DOWN | 8542.32.00.41 | SRAMs | CMOS | DUAL | J BEND | 225 | 1 | 1.27 mm | not_compliant | 44 | R-PDSO-J44 | Not Qualified | 5 V | 5.5 V | 5 V | COMMERCIAL | 4.5 V | 5.5 V | 4.5 V | 1 | 170 mA | ASYNCHRONOUS | 0.17 mA | 12 ns | 32KX16 | 3-STATE | 3.7592 mm | 16 | 15 b | 512 kb | 0.001 A | 524288 bit | PARALLEL | COMMON | 16 b | STANDARD SRAM | 4.5 V | YES | 28.575 mm | 10.16 mm | ||||||||||||||
![]() | Mfr Part No CY7C136-25JCT | Cypress Semiconductor | Datasheet | - | - | Min: 1 Mult: 1 | Surface Mount | YES | 52 | 52 | 25 ns | CYPRESS SEMICONDUCTOR CORP | Cypress Semiconductor | CY7C136-25JCT | 3 | 2000 | 2000 | 70 °C | PLASTIC/EPOXY | QCCJ | PLASTIC, LCC-52 | LDCC52,.8SQ | SQUARE | CHIP CARRIER | Obsolete | LCC | 30 | 8.7 | Compliant | No | 5 V | e0 | EAR99 | TIN LEAD | 70 °C | 0 °C | AUTOMATIC POWER-DOWN; INTERRUPT FLAG | 8542.32.00.41 | SRAMs | CMOS | QUAD | J BEND | 225 | 1 | 1.27 mm | not_compliant | 52 | S-PQCC-J52 | Not Qualified | 5 V | 5.5 V | 5 V | COMMERCIAL | 4.5 V | 5.5 V | 4.5 V | 2 | 170 mA | ASYNCHRONOUS | 0.17 mA | 25 ns | 2KX8 | 3-STATE | 5.08 mm | 8 | 22 b | 16 kb | 0.015 A | 16384 bit | PARALLEL | COMMON | Asynchronous | 8 b | DUAL-PORT SRAM | 4.5 V | YES | 19.1262 mm | 19.1262 mm | No | ||||||||||||
![]() | Mfr Part No K4S643232H-UC50 | Samsung | Datasheet | 60800 | - | Min: 1 Mult: 1 | YES | 86 | 4.5 ns | 200 MHz | SAMSUNG SEMICONDUCTOR INC | Samsung Semiconductor | K4S643232H-UC50 | 3 | 2097152 words | 2000000 | 70 °C | PLASTIC/EPOXY | TSSOP | TSSOP86,.46,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | Obsolete | 40 | 5.64 | Yes | 3.3 V | e6 | Tin/Bismuth (Sn96Bi4) | DRAMs | CMOS | DUAL | GULL WING | 260 | 0.5 mm | unknown | R-PDSO-G86 | Not Qualified | 3.3 V | COMMERCIAL | 0.17 mA | 2MX32 | 3-STATE | 32 | 0.002 A | 67108864 bit | COMMON | SYNCHRONOUS DRAM | 4096 | 1,2,4,8,FP | 1,2,4,8 | ||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No MT47H16M16BG-37E:B | Micron | Datasheet | 442 | - | Min: 1 Mult: 1 | Surface Mount | YES | 84 | 84 | 0.5 ns | 266 MHz | MICRON TECHNOLOGY INC | Micron Technology Inc | MT47H16M16BG-37E:B | 3 | 16777216 words | 16000000 | 85 °C | PLASTIC/EPOXY | TFBGA | TFBGA, BGA84,9X15,32 | BGA84,9X15,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | BGA | 30 | 8.59 | Compliant | Yes | 1.8 V | e1 | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | 85 °C | 0 °C | AUTO/SELF REFRESH | 8542.32.00.24 | DRAMs | CMOS | BOTTOM | BALL | 260 | 1 | 0.8 mm | not_compliant | 84 | R-PBGA-B84 | Not Qualified | 1.8 V | 1.9 V | 1.8 V | OTHER | 1.7 V | 1.9 V | 1.7 V | 1 | 180 mA | SYNCHRONOUS | 0.17 mA | 500 ps | 16 b | 16MX16 | 3-STATE | 1.2 mm | 16 | 15 b | 256 Mb | 0.005 A | 268435456 bit | 533 MHz | COMMON | DDR DRAM | 8192 | 4,8 | 4,8 | FOUR BANK PAGE BURST | YES | 14 mm | 8 mm | No | Lead Free | ||||||||
![]() | Mfr Part No GS88032CGT-200T | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 8 Weeks | YES | 100 | 6.5 ns | GSI TECHNOLOGY | GSI Technology | GS88032CGT-200T | 3 | 262144 words | 256000 | 70 °C | PLASTIC/EPOXY | LQFP | LQFP, QFP100,.63X.87 | QFP100,.63X.87 | RECTANGULAR | FLATPACK, LOW PROFILE | Active | QFP | NOT SPECIFIED | 5.61 | Yes | 2.5 V | e3 | Yes | 3A991.B.2.B | PURE MATTE TIN | FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY | 8542.32.00.41 | SRAMs | CMOS | QUAD | GULL WING | 260 | 1 | 0.65 mm | compliant | 100 | R-PQFP-G100 | Not Qualified | 2.7 V | 2.5/3.3 V | COMMERCIAL | 2.3 V | SYNCHRONOUS | 0.17 mA | 256KX32 | 3-STATE | 1.6 mm | 32 | 0.025 A | 8388608 bit | PARALLEL | COMMON | CACHE SRAM | 2.3 V | 20 mm | 14 mm | |||||||||||||||||||||||||||
![]() | Mfr Part No CY7C136-25NCT | Cypress Semiconductor | Datasheet | - | - | Min: 1 Mult: 1 | Surface Mount | YES | 52 | 52 | 25 ns | CYPRESS SEMICONDUCTOR CORP | Cypress Semiconductor | CY7C136-25NCT | 3 | 2000 | 2000 | 70 °C | PLASTIC/EPOXY | QFP | PLASTIC, QFP-52 | QFP52,.52SQ | SQUARE | FLATPACK | Obsolete | QFP | 30 | 5.81 | Compliant | No | 5 V | e0 | EAR99 | TIN LEAD | 70 °C | 0 °C | AUTOMATIC POWER-DOWN; INTERRUPT FLAG | 8542.32.00.41 | SRAMs | CMOS | QUAD | GULL WING | 240 | 1 | 0.65 mm | not_compliant | 52 | S-PQFP-G52 | Not Qualified | 5 V | 5.5 V | 5 V | COMMERCIAL | 4.5 V | 5.5 V | 4.5 V | 2 | 170 mA | ASYNCHRONOUS | 0.17 mA | 25 ns | 2KX8 | 3-STATE | 2.45 mm | 8 | 22 b | 16 kb | 0.015 A | 16384 bit | PARALLEL | COMMON | Asynchronous | 8 b | DUAL-PORT SRAM | 4.5 V | YES | 10 mm | 10 mm | No |
CY7C1020-12VC
Cypress Semiconductor
Package:Memory
Price: please inquire
CY7C136-25JCT
Cypress Semiconductor
Package:Memory
Price: please inquire
K4S643232H-UC50
Samsung
Package:Memory
Price: please inquire
MT47H16M16BG-37E:B
Micron
Package:Memory
Price: please inquire
GS88032CGT-200T
GSI Technology
Package:Memory
Price: please inquire
CY7C136-25NCT
Cypress Semiconductor
Package:Memory
Price: please inquire
