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Supply Current-Max:
0.18 mA

Part Number	Manufacturer	Datasheet	Availability	Pricing(USD)	Quantity	Lifecycle Status	Mounting Type	Package / Case	Surface Mount	Number of Pins	Supplier Device Package	Material	Number of Terminals	Access Time-Max	Automotive	Chip Density (bit)	Clock Frequency-Max (fCLK)	Data Bus Width (bit)	DRAM Type	ECCN (US)	EU RoHS	Ihs Manufacturer	Lead Shape	Manufacturer	Manufacturer Part Number	Maximum Operating Supply Voltage (V)	Memory Types	Minimum Operating Supply Voltage (V)	Moisture Sensitivity Levels	Mounting	Number of Bits/Word (bit)	Number of Internal Banks	Number of Words	Number of Words Code	Number of Words per Bank	Operating Temperature-Max	Operating Temperature-Min	Package Body Material	Package Code	Package Description	Package Equivalence Code	Package Height	Package Length	Package Shape	Package Style	Package Width	Part Life Cycle Code	Part Package Code	PCB changed	PPAP	Reflow Temperature-Max (s)	Risk Rank	RoHS	Rohs Code	Standard Package Name	Supplier Package	Supply Voltage-Nom (Vsup)	Typical Operating Supply Voltage (V)	Usage Level	Operating Temperature	Packaging	Series	JESD-609 Code	Pbfree Code	Part Status	ECCN Code	Terminal Finish	Max Operating Temperature	Min Operating Temperature	Applications	Additional Feature	HTS Code	Subcategory	Technology	Voltage - Supply	Terminal Position	Terminal Form	Peak Reflow Temperature (Cel)	Number of Functions	Terminal Pitch	Reach Compliance Code	Pin Count	JESD-30 Code	Qualification Status	Supply Voltage-Max (Vsup)	Power Supplies	Temperature Grade	Supply Voltage-Min (Vsup)	Note	Interface	Number of Ports	Output Configuration	Operating Mode	Supply Current-Max	Organization	Output Characteristics	Seated Height-Max	Memory Width	Standby Current-Max	Memory Density	Voltage - Load	Current - Output / Channel	Fault Protection	Screening Level	Parallel/Serial	I/O Type	Memory IC Type	Rds On (Typ)	Standby Voltage-Min	Output Enable	Refresh Cycles	Sequential Burst Length	Interleaved Burst Length	Current - Peak Output	Access Mode	Load Type	Features	Self Refresh	Enclosure Type	IP Rating	Length	Width
Mfr Part No K4S561632E-UC75	Samsung	Datasheet	159 In Stock	-	Min: 1 Mult: 1				YES				54	5.4 ns			133 MHz					SAMSUNG SEMICONDUCTOR INC		Samsung Semiconductor	K4S561632E-UC75				3				16777216 words	16000000		70 °C		PLASTIC/EPOXY	TSOP2	TSOP2, TSOP54,.46,32	TSOP54,.46,32			RECTANGULAR	SMALL OUTLINE, THIN PROFILE		Obsolete				NOT SPECIFIED	5.66		Yes			3.3 V						e6	Yes			Tin/Bismuth (Sn96Bi4)				AUTO/SELF REFRESH		DRAMs	CMOS		DUAL	GULL WING	260	1	0.8 mm	unknown		R-PDSO-G54	Not Qualified	3.6 V	3.3 V	COMMERCIAL	3 V			1		SYNCHRONOUS	0.18 mA	16MX16	3-STATE	1.2 mm	16	0.002 A	268435456 bit						COMMON	SYNCHRONOUS DRAM				8192	1,2,4,8,FP	1,2,4,8		FOUR BANK PAGE BURST			YES			22.22 mm	10.16 mm
Mfr Part No MT47H16M16BG-3E	Micron	Datasheet	-	-	Min: 1 Mult: 1				YES				84	0.45 ns			333 MHz					MICRON TECHNOLOGY INC		Micron Technology Inc	MT47H16M16BG-3E								16777216 words	16000000				PLASTIC/EPOXY	FBGA	FBGA, BGA84,9X15,32	BGA84,9X15,32			RECTANGULAR	GRID ARRAY, FINE PITCH		Obsolete					5.83		Yes			1.8 V																DRAMs	CMOS		BOTTOM	BALL			0.8 mm	compliant		R-PBGA-B84	Not Qualified		1.8 V								0.18 mA	16MX16	3-STATE		16	0.005 A	268435456 bit						COMMON	DDR DRAM				8192	4,8	4,8
Mfr Part No MT5C1008DCJ-15/IT	Micross	Datasheet	-	-	Min: 1 Mult: 1				YES				32	15 ns								MICROSS COMPONENTS		Micross Components	MT5C1008DCJ-15/IT								131072 words	128000		85 °C	-40 °C	CERAMIC, METAL-SEALED COFIRED	SOJ	SOJ, SOJ32,.44	SOJ32,.44			RECTANGULAR	SMALL OUTLINE		End Of Life	SOJ			NOT SPECIFIED	5.33		No			5 V						e0	No		3A991.B.2.B	Tin/Lead (Sn/Pb)				TTL COMPATIBLE INPUTS/OUTPUTS, 2V DATA RETENTION, BATTERY BACKUP, LOW POWER STANDBY	8542.32.00.41	SRAMs	CMOS		DUAL	J BEND	NOT SPECIFIED	1	1.27 mm	compliant	32	R-CDSO-J32	Not Qualified	5.5 V	5 V	INDUSTRIAL	4.5 V					ASYNCHRONOUS	0.18 mA	128KX8	3-STATE	3.6576 mm	8	0.01 A	1048576 bit					PARALLEL	COMMON	STANDARD SRAM		4.5 V												20.828 mm	10.414 mm
Mfr Part No K4S561632J-UI75	Samsung	Datasheet	364 In Stock	-	Min: 1 Mult: 1				YES				54	5.4 ns			133 MHz					SAMSUNG SEMICONDUCTOR INC		Samsung Semiconductor	K4S561632J-UI75				3				16777216 words	16000000		85 °C	-40 °C	PLASTIC/EPOXY	TSOP2	TSOP2, TSOP54,.46,32	TSOP54,.46,32			RECTANGULAR	SMALL OUTLINE, THIN PROFILE		Obsolete				NOT SPECIFIED	5.82		Yes			3.3 V						e6	Yes			Tin/Bismuth (Sn97Bi3)				AUTO/SELF REFRESH		DRAMs	CMOS		DUAL	GULL WING	260	1	0.8 mm	unknown		R-PDSO-G54	Not Qualified	3.6 V	3.3 V	INDUSTRIAL	3 V			1		SYNCHRONOUS	0.18 mA	16MX16	3-STATE	1.2 mm	16	0.002 A	268435456 bit						COMMON	SYNCHRONOUS DRAM				8192	1,2,4,8,FP	1,2,4,8		FOUR BANK PAGE BURST			YES			22.22 mm	10.16 mm
Mfr Part No MT5C2568C-15/883C	Micross	Datasheet	-	-	Min: 1 Mult: 1				NO				28	15 ns								MICROSS COMPONENTS		Micross Components	MT5C2568C-15/883C								32768 words	32000		125 °C	-55 °C	CERAMIC, METAL-SEALED COFIRED	DIP	DIP, DIP28,.3	DIP28,.3			RECTANGULAR	IN-LINE		Active	DIP			NOT SPECIFIED	5.04		No			5 V		Military grade				e0	No		3A001.A.2.C	TIN LEAD					8542.32.00.41	SRAMs	CMOS		DUAL	THROUGH-HOLE	NOT SPECIFIED	1	2.54 mm	compliant	28	R-CDIP-T28	Not Qualified	5.5 V	5 V	MILITARY	4.5 V					ASYNCHRONOUS	0.18 mA	32KX8	3-STATE	5.715 mm	8	0.02 A	262144 bit				MIL-STD-883	PARALLEL	COMMON	STANDARD SRAM		4.5 V												35.56 mm	7.62 mm
Mfr Part No W9751G6JB-3	Winbond	Datasheet	35 In Stock	-	Min: 1 Mult: 1				YES				84	0.45 ns			333 MHz					WINBOND ELECTRONICS CORP		Winbond Electronics Corp	W9751G6JB-3								33554432 words	32000000		85 °C		PLASTIC/EPOXY	TFBGA	TFBGA, BGA84,9X15,32	BGA84,9X15,32			RECTANGULAR	GRID ARRAY		Active	BGA			NOT SPECIFIED	5.45		Yes			1.8 V									EAR99					AUTO/SELF REFRESH	8542.32.00.28	DRAMs	CMOS		BOTTOM	BALL	NOT SPECIFIED	1	0.8 mm	compliant	84	R-PBGA-B84	Not Qualified	1.9 V	1.8 V	OTHER	1.7 V			1		SYNCHRONOUS	0.18 mA	32MX16	3-STATE	1.2 mm	16	0.008 A	536870912 bit						COMMON	DDR DRAM				8192	4,8	4,8		FOUR BANK PAGE BURST			YES			12.5 mm	8 mm
Mfr Part No CY7C1360B-166AJC	Cypress Semiconductor	Datasheet	255 In Stock	-	Min: 1 Mult: 1				YES				100	3.5 ns			166 MHz					CYPRESS SEMICONDUCTOR CORP		Cypress Semiconductor	CY7C1360B-166AJC				3				262144 words	256000		70 °C		PLASTIC/EPOXY	LQFP	14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100	QFP100,.63X.87			RECTANGULAR	FLATPACK		Obsolete	QFP			30	7.88		No			3.3 V						e0			3A991.B.2.A	TIN LEAD (800)				PIPELINED ARCHITECTURE	8542.32.00.41	SRAMs	CMOS		QUAD	GULL WING	225	1	0.65 mm	compliant	100	R-PQFP-G100	Not Qualified	3.6 V	2.5/3.3,3.3 V	COMMERCIAL	3.135 V					SYNCHRONOUS	0.18 mA	256KX36	3-STATE	1.6 mm	36	0.03 A	9437184 bit					PARALLEL	COMMON	CACHE SRAM		3.14 V												20 mm	14 mm
Mfr Part No K4S561632E-TC75T00	Samsung Semiconductor	Datasheet	-	-	Min: 1 Mult: 1				YES				54	5.4 ns	No	256M	133 MHz	16	SDRAM	EAR99	Not Compliant	SAMSUNG SEMICONDUCTOR INC	Gull-wing	Samsung Semiconductor	K4S561632E-TC75T00	3.6		3	1	Surface Mount	16	4	16777216 words	16000000	4M	70 °C		PLASTIC/EPOXY	TSOP	TSOP, TSOP54,.46,32	TSOP54,.46,32	1	22.62(Max)	RECTANGULAR	SMALL OUTLINE, THIN PROFILE	10.16	Obsolete		54	No	NOT SPECIFIED	5.69		No	SOP	TSOP-II	3.3 V	3.3						No	Obsolete								DRAMs	CMOS		DUAL	GULL WING	225		0.8 mm	compliant	54	R-PDSO-G54	Not Qualified		3.3 V	COMMERCIAL							0.18 mA	16Mx16	3-STATE		16	0.002 A	268435456 bit						COMMON	SYNCHRONOUS DRAM				8192	1,2,4,8,FP	1,2,4,8
Mfr Part No 5962-0520804QYC	Microchip	Datasheet	-	-	Min: 1 Mult: 1	Production (Last Updated: 2 years ago)			YES				36	15 ns								MICROCHIP TECHNOLOGY INC		Microchip Technology Inc	5962-0520804QYC								524288 words	512000		125 °C	-55 °C	UNSPECIFIED	DFP	DFP, FL36,.5	FL36,.5			RECTANGULAR	FLATPACK		Active					5.48	Non-Compliant	Yes			3.3 V		Military grade							3A001.A.2.C						8542.32.00.41	SRAMs	CMOS		DUAL	FLAT		1	1.27 mm	compliant		R-XDFP-F36	Qualified	3.6 V	3.3 V	MILITARY	3 V					ASYNCHRONOUS	0.18 mA	512KX8	3-STATE	3.05 mm	8	0.0015 A	4194304 bit				MIL-PRF-38535 Class Q	PARALLEL	COMMON	STANDARD SRAM		2 V													12.195 mm
Mfr Part No IDT71V416S12PHG8	Renesas	Datasheet	-	-	Min: 1 Mult: 1		Surface Mount	12-VFDFN Exposed Pad	YES	44	12-DFN (4x3)		44	12 ns								INTEGRATED DEVICE TECHNOLOGY INC		Integrated Device Technology Inc	IDT71V416S12PHG8		RAM, SRAM - Asynchronous		3				262144 words	256000		70 °C		PLASTIC/EPOXY	TSOP2	TSOP2, TSOP44,.46,32	TSOP44,.46,32			RECTANGULAR	SMALL OUTLINE, THIN PROFILE		Active	TSOP2			30	5.09	Compliant	Yes			3.3 V			-40°C ~ 85°C (TA)	Tube	--	e3	Yes	Obsolete	3A991.B.2.A	Matte Tin (Sn) - annealed	70 °C	0 °C	General Purpose		8542.32.00.41	SRAMs	--	4.5 V ~ 5.5 V	DUAL	GULL WING	260	1	0.8 mm	compliant	44	R-PDSO-G44	Not Qualified	3.6 V	3.3 V	COMMERCIAL	3 V		2-Wire	1	Half Bridge	ASYNCHRONOUS	0.18 mA	256KX16	3-STATE	1.2 mm	16	0.02 A	4194304 bit	5.6 V ~ 12.6 V	--	--		PARALLEL	COMMON	STANDARD SRAM	--	3 V	YES				6A		Inductive	--				18.41 mm	10.16 mm
Mfr Part No IS42S16400F-5BLI	ISSI	Datasheet	-	-	Min: 1 Mult: 1				YES			AL	54	5 ns			200 MHz					INTEGRATED SILICON SOLUTION INC		Integrated Silicon Solution Inc	IS42S16400F-5BLI				3				4194304 words	4000000		85 °C	-40 °C	PLASTIC/EPOXY	TFBGA	TFBGA, BGA54,9X9,32	BGA54,9X9,32			SQUARE	GRID ARRAY, THIN PROFILE, FINE PITCH		Obsolete	BGA			10	5.64	Yes	Yes			3.3 V					1590	e1	Yes		EAR99	Tin/Silver/Copper (Sn/Ag/Cu)				AUTO/SELF REFRESH	8542.32.00.02	DRAMs	CMOS		BOTTOM	BALL	260	1	0.8 mm	compliant	54	S-PBGA-B54	Not Qualified	3.6 V	3.3 V	INDUSTRIAL	3 V	-		1		SYNCHRONOUS	0.18 mA	4MX16	3-STATE	1.2 mm	16	0.003 A	67108864 bit						COMMON	SYNCHRONOUS DRAM				4096	1,2,4,8,FP	1,2,4,8		FOUR BANK PAGE BURST			YES	Multipurpose	IP65	8 mm	8 mm
Mfr Part No M12L64164A-7T	Elite Semiconductor Memory Technology Inc	Datasheet	-	-	Min: 1 Mult: 1				YES				54	6 ns			143 MHz					ELITE SEMICONDUCTOR MICROELECTRONICS TECHNOLOGYINC											4194304 words	4000000		70 °C		PLASTIC/EPOXY	TSOP		TSOP54,.46,32			RECTANGULAR	SMALL OUTLINE, THIN PROFILE		Obsolete							No			3.3 V									EAR99						8542.32.00.02				DUAL	GULL WING			0.8 mm	unknown		R-PDSO-G54	Not Qualified			COMMERCIAL							0.18 mA	4MX16	3-STATE		16	0.001 A	67108864 bit						COMMON	SYNCHRONOUS DRAM				4096	1,2,4,8,FP	1,2,4,8
Mfr Part No HY57V561620FLTP-6	SK Hynix Inc	Datasheet	-	-	Min: 1 Mult: 1				YES				54	5.4 ns			166 MHz					SK HYNIX INC											16777216 words	16000000		70 °C		PLASTIC/EPOXY	TSOP2	TSOP2, TSOP54,.46,32	TSOP54,.46,32			RECTANGULAR	SMALL OUTLINE, THIN PROFILE		Obsolete	TSOP2						Yes			3.3 V						e6	Yes		EAR99	TIN BISMUTH				AUTO/SELF REFRESH	8542.32.00.24				DUAL	GULL WING		1	0.8 mm	compliant	54	R-PDSO-G54	Not Qualified	3.6 V		COMMERCIAL	3 V			1		SYNCHRONOUS	0.18 mA	16MX16	3-STATE	1.2 mm	16	0.001 A	268435456 bit						COMMON	SYNCHRONOUS DRAM				8192	1,2,4,8,FP	1,2,4,8		FOUR BANK PAGE BURST			YES			22.22 mm	10.16 mm
Mfr Part No IS61VF12836A-6.5B2I	Integrated Silicon Solution Inc	Datasheet	-	-	Min: 1 Mult: 1				YES				119	6.5 ns			133 MHz					INTEGRATED SILICON SOLUTION INC							3				131072 words	128000		85 °C	-40 °C	PLASTIC/EPOXY	BGA	BGA, BGA119,7X17,50	BGA119,7X17,50			RECTANGULAR	GRID ARRAY		Active	BGA						No			2.5 V						e0	No		3A991.B.2.A	TIN LEAD				FLOW-THROUGH ARCHITECTURE	8542.32.00.41				BOTTOM	BALL		1	1.27 mm	compliant	119	R-PBGA-B119	Not Qualified	2.75 V		INDUSTRIAL	2.375 V					SYNCHRONOUS	0.18 mA	128KX36	3-STATE	2.41 mm	36	0.035 A	4718592 bit					PARALLEL	COMMON	CACHE SRAM		2.38 V												22 mm	14 mm
Mfr Part No NMC2147HJ-2	National Semiconductor Corporation	Datasheet	-	-	Min: 1 Mult: 1				NO				18	45 ns								NATIONAL SEMICONDUCTOR CORP											4096 words	4000		70 °C		CERAMIC, GLASS-SEALED	DIP	DIP, DIP18,.3	DIP18,.3			RECTANGULAR	IN-LINE		Obsolete							No			5 V						e0			EAR99	TIN LEAD					8542.32.00.41				DUAL	THROUGH-HOLE		1	2.54 mm	unknown		R-GDIP-T18	Not Qualified	5.5 V		COMMERCIAL	4.5 V			1		ASYNCHRONOUS	0.18 mA	4KX1	3-STATE	5.08 mm	1		4096 bit					PARALLEL	SEPARATE	STANDARD SRAM		4.5 V	NO												7.62 mm
Mfr Part No IDT71321SA55L52	Integrated Device Technology Inc	Datasheet	-	-	Min: 1 Mult: 1				YES				52	55 ns								INTEGRATED DEVICE TECHNOLOGY INC											2048 words	2000		70 °C		CERAMIC, METAL-SEALED COFIRED	QCCN	QCCN, LCC52,.75SQ	LCC52,.75SQ			SQUARE	CHIP CARRIER		Obsolete	LCC						No			5 V						e0	No		EAR99	TIN LEAD				INTERRUPT FLAG; AUTOMATIC POWER-DOWN	8542.32.00.41				QUAD	NO LEAD		1	1.27 mm	not_compliant	52	S-CQCC-N52	Not Qualified	5.5 V		COMMERCIAL	4.5 V			2		ASYNCHRONOUS	0.18 mA	2KX8	3-STATE	2.2098 mm	8	0.015 A	16384 bit					PARALLEL	COMMON	MULTI-PORT SRAM		4.5 V	YES											19.05 mm	19.05 mm
Mfr Part No IDT7030LA25P	Integrated Device Technology Inc	Datasheet	-	-	Min: 1 Mult: 1				NO				48	25 ns								INTEGRATED DEVICE TECHNOLOGY INC											1024 words	1000		70 °C		PLASTIC/EPOXY	DIP	DIP, DIP48,.6	DIP48,.6			RECTANGULAR	IN-LINE		Obsolete	DIP						No			5 V						e0	No		EAR99	TIN LEAD				BATTERY BACK-UP	8542.32.00.41				DUAL	THROUGH-HOLE		1	2.54 mm	not_compliant	48	R-PDIP-T48	Not Qualified	5.5 V		COMMERCIAL	4.5 V			2		ASYNCHRONOUS	0.18 mA	1KX8	3-STATE	5.08 mm	8	0.0015 A	8192 bit					PARALLEL	COMMON	MULTI-PORT SRAM		2 V												61.849 mm	15.24 mm
Mfr Part No HM621664HBLJP-15	Hitachi Ltd	Datasheet	-	-	Min: 1 Mult: 1				YES				44	15 ns								HITACHI LTD											65536 words	64000		70 °C		PLASTIC/EPOXY	SOJ	0.400 INCH, PLASTIC, SOJ-44	SOJ44,.44			RECTANGULAR	SMALL OUTLINE		Obsolete	SOJ									5 V														TTL COMPATIBLE INPUTS/OUTPUTS					DUAL	J BEND		1	1.27 mm	unknown	44	R-PDSO-J44	Not Qualified	5.5 V	5 V	COMMERCIAL	4.5 V					ASYNCHRONOUS	0.18 mA	64KX16	3-STATE	3.76 mm	16	0.00008 A	1048576 bit					PARALLEL	COMMON	CACHE SRAM		2 V												28.33 mm	10.16 mm
Mfr Part No IS61LF12832A-6.5TQI	Integrated Silicon Solution Inc	Datasheet	-	-	Min: 1 Mult: 1				YES				100	6.5 ns			133 MHz					INTEGRATED SILICON SOLUTION INC							3				131072 words	128000		85 °C	-40 °C	PLASTIC/EPOXY	LQFP	TQFP-100	QFP100,.63X.87			RECTANGULAR	FLATPACK, LOW PROFILE		Obsolete	QFP						No			3.3 V						e0	No		3A991.B.2.A	TIN LEAD				FLOW-THROUGH ARCHITECTURE	8542.32.00.41				QUAD	GULL WING		1	0.65 mm	compliant	100	R-PQFP-G100	Not Qualified	3.465 V		INDUSTRIAL	3.135 V					SYNCHRONOUS	0.18 mA	128KX32	3-STATE	1.6 mm	32	0.035 A	4194304 bit					PARALLEL	COMMON	CACHE SRAM		3.14 V												20 mm	14 mm
Mfr Part No IDT7132LA70L48B	Integrated Device Technology Inc	Datasheet	-	-	Min: 1 Mult: 1				YES				48	70 ns								INTEGRATED DEVICE TECHNOLOGY INC											2048 words	2000		125 °C	-55 °C	CERAMIC, METAL-SEALED COFIRED	QCCN	LCC-48	LCC48,.56SQ,40			SQUARE	CHIP CARRIER		Obsolete	LCC						No			5 V						e0	No		3A001.A.2.C	TIN LEAD				AUTOMATIC POWER-DOWN	8542.32.00.41				QUAD	NO LEAD		1	1.016 mm	not_compliant	48	S-CQCC-N48	Not Qualified	5.5 V		MILITARY	4.5 V			2		ASYNCHRONOUS	0.18 mA	2KX8	3-STATE	3.048 mm	8	0.004 A	16384 bit				38535Q/M;38534H;883B	PARALLEL	COMMON	MULTI-PORT SRAM		2 V	YES											14.3002 mm	14.3002 mm

Memory (71)