The category is 'Memory'
Memory (43)
- All Manufacturers
- Access Time-Max
- I/O Type
- Ihs Manufacturer
- JESD-30 Code
- Memory Density
- Memory IC Type
- Memory Width
- Number of Terminals
- Number of Words
- Number of Words Code
- Organization
- Supply Current-Max
- Supply Current-Max:
0.19 mA
Image | Part Number | Manufacturer | Datasheet | Availability | Pricing(USD) | Quantity | RoHS | Surface Mount | Number of Terminals | Access Time-Max | Brand | Clock Frequency-Max (fCLK) | Date Of Intro | Factory Pack QuantityFactory Pack Quantity | Ihs Manufacturer | Manufacturer | Manufacturer Part Number | Moisture Sensitivity Levels | Number of Words | Number of Words Code | Operating Temperature-Max | Operating Temperature-Min | Package Body Material | Package Code | Package Description | Package Equivalence Code | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Reflow Temperature-Max (s) | Risk Rank | RoHS | Rohs Code | Supply Voltage-Nom (Vsup) | Packaging | Series | JESD-609 Code | Pbfree Code | ECCN Code | Terminal Finish | Additional Feature | HTS Code | Subcategory | Technology | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Terminal Pitch | Reach Compliance Code | Time@Peak Reflow Temperature-Max (s) | Pin Count | JESD-30 Code | Qualification Status | Supply Voltage-Max (Vsup) | Power Supplies | Temperature Grade | Supply Voltage-Min (Vsup) | Number of Ports | Operating Mode | Supply Current-Max | Organization | Output Characteristics | Seated Height-Max | Memory Width | Product Type | Standby Current-Max | Memory Density | Parallel/Serial | I/O Type | Memory IC Type | Output Format | Standby Voltage-Min | Output Enable | Refresh Cycles | Sequential Burst Length | Interleaved Burst Length | Access Mode | Self Refresh | Product Category | Length | Width |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | Mfr Part No H5TQ2G63BFR-H9C | Hynix | Datasheet | 864 | - | Min: 1 Mult: 1 | YES | 96 | 20 ns | 667 MHz | SK HYNIX INC | SK Hynix Inc | H5TQ2G63BFR-H9C | 134217728 words | 128000000 | 85 °C | PLASTIC/EPOXY | TFBGA | TFBGA, BGA96,9X16,32 | BGA96,9X16,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | BGA | NOT SPECIFIED | 5.79 | Yes | 1.5 V | EAR99 | AUTO/SELF REFRESH | 8542.32.00.36 | DRAMs | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 0.8 mm | unknown | 96 | R-PBGA-B96 | Not Qualified | 1.575 V | 1.5 V | OTHER | 1.425 V | 1 | SYNCHRONOUS | 0.19 mA | 128MX16 | 3-STATE | 1.2 mm | 16 | 0.012 A | 2147483648 bit | COMMON | DDR DRAM | 8192 | 4,8 | 4,8 | MULTI BANK PAGE BURST | YES | 13 mm | 9 mm | |||||||||||||||||||
| Mfr Part No GS84036AGT-100 | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | YES | 100 | 12 ns | 100 MHz | GSI TECHNOLOGY | GSI Technology | GS84036AGT-100 | 3 | 131072 words | 128000 | 70 °C | PLASTIC/EPOXY | LQFP | LQFP, QFP100,.63X.87 | QFP100,.63X.87 | RECTANGULAR | FLATPACK, LOW PROFILE | Obsolete | QFP | NOT SPECIFIED | 5.66 | Yes | 3.3 V | e3 | Yes | 3A991.B.2.B | PURE MATTE TIN | FLOW-THROUGH OR PIPELINED ARCHITECTURE | 8542.32.00.41 | SRAMs | CMOS | QUAD | GULL WING | 260 | 1 | 0.65 mm | compliant | 100 | R-PQFP-G100 | Not Qualified | 3.6 V | 2.5/3.3,3.3 V | COMMERCIAL | 3 V | SYNCHRONOUS | 0.19 mA | 128KX36 | 3-STATE | 1.6 mm | 36 | 0.02 A | 4718592 bit | PARALLEL | COMMON | CACHE SRAM | 3.14 V | 20 mm | 14 mm | |||||||||||||||||||
| Mfr Part No NT5CB64M16FP-DII | Nanya | Datasheet | 16 | - | Min: 1 Mult: 1 | YES | 96 | 0.225 ns | CTS Electronic Components | 800 MHz | 1000 | NANYA TECHNOLOGY CORP | CTS | NT5CB64M16FP-DII | 67108864 words | 64000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TFBGA | TFBGA, BGA96,9X16,32 | BGA96,9X16,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | NOT SPECIFIED | 5.63 | Details | Yes | 1.5 V | Reel | 532 | AUTO/SELF REFRESH | Oscillators | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 0.8 mm | compliant | R-PBGA-B96 | Not Qualified | 1.575 V | 1.35 V | INDUSTRIAL | 1.425 V | 1 | SYNCHRONOUS | 0.19 mA | 64MX16 | 3-STATE | 1.2 mm | 16 | TCXO | 0.01 A | 1073741824 bit | COMMON | DDR DRAM | Clipped Sine Wave | 8192 | 8 | 8 | MULTI BANK PAGE BURST | YES | TCXO Oscillators | 13 mm | 9 mm | ||||||||||||||
 | Mfr Part No KM6161002AT-20 | Samsung Semiconductor | Datasheet | - | - | Min: 1 Mult: 1 | YES | 44 | 20 ns | SAMSUNG SEMICONDUCTOR INC | 65536 words | 64000 | 70 °C | PLASTIC/EPOXY | TSOP2 | TSOP2, TSOP44,.46,32 | TSOP44,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | TSOP2 | No | 5 V | e0 | No | 3A991.B.2.B | TIN LEAD | TTL COMPATIBLE INPUTS/OUTPUTS/3.3V GTL COMPATIBLE I/O | 8542.32.00.41 | DUAL | GULL WING | 1 | 0.8 mm | unknown | 44 | R-PDSO-G44 | Not Qualified | 5.5 V | COMMERCIAL | 4.5 V | 1 | ASYNCHRONOUS | 0.19 mA | 64KX16 | 3-STATE | 1.2 mm | 16 | 0.01 A | 1048576 bit | PARALLEL | COMMON | STANDARD SRAM | 4.5 V | YES | 18.41 mm | 10.16 mm | |||||||||||||||||||||||||||
 | Mfr Part No M5M54R04AJ-10 | Mitsubishi Electric | Datasheet | - | - | Min: 1 Mult: 1 | YES | 32 | 10 ns | MITSUBISHI ELECTRIC CORP | 1048576 words | 1000000 | 70 °C | PLASTIC/EPOXY | SOJ | SOJ, SOJ32,.44 | SOJ32,.44 | RECTANGULAR | SMALL OUTLINE | Obsolete | SOJ | No | 3.3 V | e0 | 3A991.B.2.A | TIN LEAD | 8542.32.00.41 | DUAL | J BEND | 1 | 1.27 mm | unknown | 32 | R-PDSO-J32 | Not Qualified | 3.6 V | COMMERCIAL | 3 V | ASYNCHRONOUS | 0.19 mA | 1MX4 | 3-STATE | 3.55 mm | 4 | 0.01 A | 4194304 bit | PARALLEL | COMMON | STANDARD SRAM | 3.14 V | 20.95 mm | 10.16 mm | |||||||||||||||||||||||||||||||
| Mfr Part No T2316160A-45S | TM Technology Inc | Datasheet | - | - | Min: 1 Mult: 1 | YES | 44 | 45 ns | TM TECHNOLOGY INC | 1048576 words | 1000000 | 70 °C | PLASTIC/EPOXY | TSOP2 | TSOP2, TSOP44/50,.46,32 | TSOP44/50,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Contact Manufacturer | 5 V | EAR99 | RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH | 8542.32.00.02 | DUAL | GULL WING | 1 | 0.8 mm | unknown | R-PDSO-G44 | Not Qualified | 5.5 V | COMMERCIAL | 4.5 V | 1 | ASYNCHRONOUS | 0.19 mA | 1MX16 | 3-STATE | 1.2 mm | 16 | 0.001 A | 16777216 bit | COMMON | EDO DRAM | 1024 | FAST PAGE | NO | 20.95 mm | 10.16 mm | |||||||||||||||||||||||||||||||||
| Mfr Part No IDT10484S7C | Integrated Device Technology Inc | Datasheet | - | - | Min: 1 Mult: 1 | NO | 28 | 7 ns | INTEGRATED DEVICE TECHNOLOGY INC | 4096 words | 4000 | 70 °C | CERAMIC, METAL-SEALED COFIRED | DIP | DIP28,.4 | RECTANGULAR | IN-LINE | Obsolete | No | e0 | EAR99 | TIN LEAD | 8542.32.00.41 | DUAL | THROUGH-HOLE | 1 | 2.54 mm | not_compliant | R-CDIP-T28 | Not Qualified | COMMERCIAL | ASYNCHRONOUS | 0.19 mA | 4KX4 | OPEN-EMITTER | 4 | 16384 bit | PARALLEL | SEPARATE | STANDARD SRAM | ||||||||||||||||||||||||||||||||||||||||||
 | Mfr Part No HY57V281620ETP-7 | SK Hynix Inc | Datasheet | - | - | Min: 1 Mult: 1 | YES | 54 | 5.4 ns | 143 MHz | SK HYNIX INC | 8388608 words | 8000000 | 70 °C | PLASTIC/EPOXY | TSOP2 | TSOP2, TSOP54,.46,32 | TSOP54,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | TSOP2 | Yes | 3.3 V | e6 | EAR99 | TIN BISMUTH | AUTO/SELF REFRESH | 8542.32.00.02 | DUAL | GULL WING | 1 | 0.8 mm | unknown | 54 | R-PDSO-G54 | Not Qualified | 3.6 V | COMMERCIAL | 3 V | 1 | SYNCHRONOUS | 0.19 mA | 8MX16 | 3-STATE | 1.194 mm | 16 | 0.002 A | 134217728 bit | COMMON | SYNCHRONOUS DRAM | 4096 | 1,2,4,8,FP | 1,2,4,8 | FOUR BANK PAGE BURST | YES | 22.238 mm | 10.16 mm | |||||||||||||||||||||||||
| Mfr Part No T2316162A-45J | TM Technology Inc | Datasheet | - | - | Min: 1 Mult: 1 | YES | 42 | 45 ns | TM TECHNOLOGY INC | 1048576 words | 1000000 | 70 °C | PLASTIC/EPOXY | SOJ | SOJ, SOJ42,.44 | SOJ42,.44 | RECTANGULAR | SMALL OUTLINE | Contact Manufacturer | 5 V | EAR99 | RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH | 8542.32.00.02 | DUAL | J BEND | 1 | 1.27 mm | unknown | R-PDSO-J42 | Not Qualified | 5.5 V | COMMERCIAL | 4.5 V | 1 | ASYNCHRONOUS | 0.19 mA | 1MX16 | 3-STATE | 3.759 mm | 16 | 0.001 A | 16777216 bit | COMMON | EDO DRAM | 1024 | EDO PAGE | NO | 27.305 mm | 10.16 mm | |||||||||||||||||||||||||||||||||
| Mfr Part No PDM41256SA10SO | Paradigm Technology Inc | Datasheet | - | - | Min: 1 Mult: 1 | YES | 28 | 10 ns | PARADIGM TECHNOLOGY INC | 32768 words | 32000 | 70 °C | PLASTIC/EPOXY | SOJ | SOJ28,.34 | RECTANGULAR | SMALL OUTLINE | Transferred | No | 5 V | e0 | EAR99 | Tin/Lead (Sn/Pb) | 8542.32.00.41 | DUAL | J BEND | 1 | 1.27 mm | unknown | R-PDSO-J28 | Not Qualified | 5.25 V | COMMERCIAL | 4.75 V | 1 | ASYNCHRONOUS | 0.19 mA | 32KX8 | 3-STATE | 8 | 0.02 A | 262144 bit | PARALLEL | COMMON | STANDARD SRAM | 4.5 V | YES | |||||||||||||||||||||||||||||||||||
 | Mfr Part No IDT71321SA45L52 | Integrated Device Technology Inc | Datasheet | - | - | Min: 1 Mult: 1 | YES | 52 | 45 ns | INTEGRATED DEVICE TECHNOLOGY INC | 2048 words | 2000 | 70 °C | CERAMIC, METAL-SEALED COFIRED | QCCN | QCCN, LCC52,.75SQ | LCC52,.75SQ | SQUARE | CHIP CARRIER | Obsolete | LCC | No | 5 V | e0 | No | EAR99 | TIN LEAD | INTERRUPT FLAG; AUTOMATIC POWER-DOWN | 8542.32.00.41 | QUAD | NO LEAD | 1 | 1.27 mm | not_compliant | 52 | S-CQCC-N52 | Not Qualified | 5.5 V | COMMERCIAL | 4.5 V | 2 | ASYNCHRONOUS | 0.19 mA | 2KX8 | 3-STATE | 2.2098 mm | 8 | 0.015 A | 16384 bit | PARALLEL | COMMON | MULTI-PORT SRAM | 4.5 V | YES | 19.05 mm | 19.05 mm | |||||||||||||||||||||||||||
| Mfr Part No HY57V281620FTP-7 | SK Hynix Inc | Datasheet | - | - | Min: 1 Mult: 1 | YES | 54 | 5.4 ns | 143 MHz | SK HYNIX INC | 8388608 words | 8000000 | 70 °C | PLASTIC/EPOXY | TSOP2 | TSOP2, TSOP54,.46,32 | TSOP54,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | TSOP2 | Yes | 3.3 V | e6 | EAR99 | TIN BISMUTH | AUTO/SELF REFRESH | 8542.32.00.02 | DUAL | GULL WING | 1 | 0.8 mm | unknown | 54 | R-PDSO-G54 | Not Qualified | 3.6 V | COMMERCIAL | 3 V | 1 | SYNCHRONOUS | 0.19 mA | 8MX16 | 3-STATE | 1.194 mm | 16 | 0.002 A | 134217728 bit | COMMON | SYNCHRONOUS DRAM | 4096 | 1,2,4,8,FP | 1,2,4,8 | FOUR BANK PAGE BURST | YES | 22.238 mm | 10.16 mm | |||||||||||||||||||||||||
| Mfr Part No HY57V281620FTP-7I | SK Hynix Inc | Datasheet | - | - | Min: 1 Mult: 1 | YES | 54 | 5.4 ns | 143 MHz | SK HYNIX INC | 8388608 words | 8000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TSOP | TSOP, TSOP54,.46,32 | TSOP54,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | Yes | 3.3 V | EAR99 | 8542.32.00.02 | DUAL | GULL WING | 0.8 mm | unknown | R-PDSO-G54 | Not Qualified | INDUSTRIAL | 0.19 mA | 8MX16 | 3-STATE | 16 | 0.002 A | 134217728 bit | COMMON | SYNCHRONOUS DRAM | 4096 | 1,2,4,8,FP | 1,2,4,8 | |||||||||||||||||||||||||||||||||||||||
| Mfr Part No IS41LV16100S-45TI | Integrated Circuit Solution Inc | Datasheet | - | - | Min: 1 Mult: 1 | YES | 44 | 45 ns | INTEGRATED CIRCUIT SOLUTION INC | 1048576 words | 1000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TSOP | TSOP, TSOP44/50,.46,32 | TSOP44/50,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Transferred | No | 3.3 V | e0 | EAR99 | Tin/Lead (Sn/Pb) | 8542.32.00.02 | DUAL | GULL WING | 0.8 mm | unknown | R-PDSO-G44 | Not Qualified | INDUSTRIAL | 0.19 mA | 1MX16 | 3-STATE | 16 | 0.0005 A | 16777216 bit | COMMON | EDO DRAM | 1024 | YES | |||||||||||||||||||||||||||||||||||||||
 | Mfr Part No IDT70V24S25JI | Integrated Device Technology Inc | Datasheet | - | - | Min: 1 Mult: 1 | YES | 84 | 25 ns | INTEGRATED DEVICE TECHNOLOGY INC | 1 | 4096 words | 4000 | 85 °C | -40 °C | PLASTIC/EPOXY | QCCJ | QCCJ, LDCC84,1.2SQ | LDCC84,1.2SQ | SQUARE | CHIP CARRIER | Obsolete | LCC | No | 3.3 V | e0 | No | EAR99 | Tin/Lead (Sn85Pb15) | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN | 8542.32.00.41 | QUAD | J BEND | 225 | 1 | 2.54 mm | not_compliant | 30 | 84 | S-PQCC-J84 | Not Qualified | 3.6 V | INDUSTRIAL | 3 V | 2 | ASYNCHRONOUS | 0.19 mA | 4KX16 | 3-STATE | 4.572 mm | 16 | 0.005 A | 65536 bit | PARALLEL | COMMON | MULTI-PORT SRAM | 3 V | 29.3116 mm | 29.3116 mm | ||||||||||||||||||||||||
| Mfr Part No UPD444016LG5-A10Y-7JF-A | Renesas Electronics Corporation | Datasheet | - | - | Min: 1 Mult: 1 | YES | 44 | 10 ns | RENESAS ELECTRONICS CORP | 256 words | 256 | 85 °C | -40 °C | PLASTIC/EPOXY | TSOP2 | TSOP2, TSOP44,.46,32 | TSOP44,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | TSOP2 | Yes | 3.3 V | e6 | Yes | EAR99 | TIN BISMUTH | 8542.32.00.41 | DUAL | GULL WING | 1 | 0.8 mm | unknown | 44 | R-PDSO-G44 | Not Qualified | 3.6 V | INDUSTRIAL | 3 V | ASYNCHRONOUS | 0.19 mA | 256X16 | 3-STATE | 1.2 mm | 16 | 0.005 A | 4096 bit | PARALLEL | COMMON | STANDARD SRAM | 3 V | 18.41 mm | 10.16 mm | |||||||||||||||||||||||||||||
| Mfr Part No IS46R83200F-6BLA2 | Integrated Silicon Solution Inc | Datasheet | - | - | Min: 1 Mult: 1 | YES | 60 | 0.7 ns | 166 MHz | 2016-10-26 | INTEGRATED SILICON SOLUTION INC | 33554432 words | 32000000 | 105 °C | -40 °C | PLASTIC/EPOXY | TBGA | TBGA, BGA60,9X12,40/32 | BGA60,9X12,40/32 | RECTANGULAR | GRID ARRAY, THIN PROFILE | Active | 2.5 V | EAR99 | 8542.32.00.24 | BOTTOM | BALL | 260 | 1 | 1 mm | unknown | R-PBGA-B60 | 2.7 V | INDUSTRIAL | 2.3 V | 1 | SYNCHRONOUS | 0.19 mA | 32MX8 | 3-STATE | 1.2 mm | 8 | 0.03 A | 268435456 bit | COMMON | DDR1 DRAM | 2,4,8 | 2,4,8 | FOUR BANK PAGE BURST | YES | 13 mm | 8 mm | ||||||||||||||||||||||||||||||
| Mfr Part No TC558128BJ-12 | Toshiba America Electronic Components | Datasheet | - | - | Min: 1 Mult: 1 | YES | 32 | 12 ns | TOSHIBA CORP | 131072 words | 128000 | 70 °C | PLASTIC/EPOXY | SOJ | SOJ, SOJ32,.44 | SOJ32,.44 | RECTANGULAR | SMALL OUTLINE | Obsolete | SOJ | No | 5 V | e0 | 3A991.B.2.B | Tin/Lead (Sn/Pb) | 8542.32.00.41 | DUAL | J BEND | 1 | 1.27 mm | unknown | 32 | R-PDSO-J32 | Not Qualified | 5.5 V | COMMERCIAL | 4.5 V | ASYNCHRONOUS | 0.19 mA | 128KX8 | 3-STATE | 3.7 mm | 8 | 0.001 A | 1048576 bit | PARALLEL | COMMON | CACHE SRAM | 4.5 V | 20.96 mm | 10.16 mm | |||||||||||||||||||||||||||||||
| Mfr Part No H57V1262GTR-75J | SK Hynix Inc | Datasheet | - | - | Min: 1 Mult: 1 | YES | 54 | 5.4 ns | 133 MHz | SK HYNIX INC | 8388608 words | 8000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TSOP2 | TSOP2, TSOP54,.46,32 | TSOP54,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | TSOP2 | Yes | 3.3 V | e6 | EAR99 | Tin/Bismuth (Sn/Bi) | AUTO/SELF REFRESH | 8542.32.00.02 | DUAL | GULL WING | 260 | 1 | 0.8 mm | unknown | 20 | 54 | R-PDSO-G54 | Not Qualified | 3.6 V | INDUSTRIAL | 3 V | 1 | SYNCHRONOUS | 0.19 mA | 8MX16 | 3-STATE | 1.194 mm | 16 | 0.002 A | 134217728 bit | COMMON | SYNCHRONOUS DRAM | 4096 | 1,2,4,8,FP | 1,2,4,8 | FOUR BANK PAGE BURST | YES | 22.238 mm | 10.16 mm | ||||||||||||||||||||||
 | Mfr Part No KM684002BT-12 | Samsung Semiconductor | Datasheet | - | - | Min: 1 Mult: 1 | YES | 36 | 12 ns | SAMSUNG SEMICONDUCTOR INC | 524288 words | 512000 | 70 °C | PLASTIC/EPOXY | TSOP | TSOP, TSOP36,.46,40 | TSOP36,.46,40 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | TSOP2 | No | 5 V | e0 | No | 3A991.B.2.A | TIN LEAD | TTL COMPATIBLE INPUTS/OUTPUTS | 8542.32.00.41 | DUAL | GULL WING | 1 | 1 mm | unknown | 36 | R-PDSO-G36 | Not Qualified | 5.5 V | COMMERCIAL | 4.5 V | ASYNCHRONOUS | 0.19 mA | 512KX8 | 3-STATE | 1.2 mm | 8 | 0.01 A | 4194304 bit | PARALLEL | COMMON | STANDARD SRAM | 4.5 V | 18.41 mm | 10.16 mm |
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H5TQ2G63BFR-H9C
Hynix
Package:Memory
Price: please inquire
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GS84036AGT-100
GSI Technology
Package:Memory
Price: please inquire
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NT5CB64M16FP-DII
Nanya
Package:Memory
Price: please inquire
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KM6161002AT-20
Samsung Semiconductor
Package:Memory
Price: please inquire
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M5M54R04AJ-10
Mitsubishi Electric
Package:Memory
Price: please inquire
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T2316160A-45S
TM Technology Inc
Package:Memory
Price: please inquire
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IDT10484S7C
Integrated Device Technology Inc
Package:Memory
Price: please inquire
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HY57V281620ETP-7
SK Hynix Inc
Package:Memory
Price: please inquire
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T2316162A-45J
TM Technology Inc
Package:Memory
Price: please inquire
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PDM41256SA10SO
Paradigm Technology Inc
Package:Memory
Price: please inquire
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IDT71321SA45L52
Integrated Device Technology Inc
Package:Memory
Price: please inquire
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HY57V281620FTP-7
SK Hynix Inc
Package:Memory
Price: please inquire
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HY57V281620FTP-7I
SK Hynix Inc
Package:Memory
Price: please inquire
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IS41LV16100S-45TI
Integrated Circuit Solution Inc
Package:Memory
Price: please inquire
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IDT70V24S25JI
Integrated Device Technology Inc
Package:Memory
Price: please inquire
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UPD444016LG5-A10Y-7JF-A
Renesas Electronics Corporation
Package:Memory
Price: please inquire
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IS46R83200F-6BLA2
Integrated Silicon Solution Inc
Package:Memory
Price: please inquire
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TC558128BJ-12
Toshiba America Electronic Components
Package:Memory
Price: please inquire
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H57V1262GTR-75J
SK Hynix Inc
Package:Memory
Price: please inquire
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KM684002BT-12
Samsung Semiconductor
Package:Memory
Price: please inquire