The category is 'Memory'
Memory (43)
- All Manufacturers
- Access Time-Max
- I/O Type
- Ihs Manufacturer
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- Memory Density
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- Number of Words
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- Supply Current-Max
- Supply Current-Max:
0.19 mA
Image | Part Number | Manufacturer | Datasheet | Availability | Pricing(USD) | Quantity | RoHS | Factory Lead Time | Surface Mount | Number of Terminals | Access Time-Max | Clock Frequency-Max (fCLK) | Ihs Manufacturer | Manufacturer | Manufacturer Part Number | Moisture Sensitivity Levels | Number of Words | Number of Words Code | Operating Temperature-Max | Operating Temperature-Min | Package Body Material | Package Code | Package Description | Package Equivalence Code | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Reflow Temperature-Max (s) | Risk Rank | RoHS | Rohs Code | Supply Voltage-Nom (Vsup) | JESD-609 Code | Pbfree Code | ECCN Code | Terminal Finish | Max Operating Temperature | Min Operating Temperature | Additional Feature | HTS Code | Subcategory | Technology | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Terminal Pitch | Reach Compliance Code | Time@Peak Reflow Temperature-Max (s) | Pin Count | JESD-30 Code | Qualification Status | Operating Supply Voltage | Supply Voltage-Max (Vsup) | Power Supplies | Temperature Grade | Supply Voltage-Min (Vsup) | Number of Ports | Operating Mode | Supply Current-Max | Organization | Output Characteristics | Seated Height-Max | Memory Width | Address Bus Width | Density | Standby Current-Max | Memory Density | Parallel/Serial | I/O Type | Memory IC Type | Standby Voltage-Min | Output Enable | Refresh Cycles | Sequential Burst Length | Interleaved Burst Length | Access Mode | Self Refresh | Length | Width | Radiation Hardening |
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![]() | Mfr Part No IDT70V27L35PFG | Integrated Device Technology Inc | Datasheet | - | - | Min: 1 Mult: 1 | YES | 100 | 35 ns | INTEGRATED DEVICE TECHNOLOGY INC | 3 | 32768 words | 32000 | 70 °C | PLASTIC/EPOXY | LFQFP | LFQFP, QFP100,.63SQ,20 | QFP100,.63SQ,20 | SQUARE | FLATPACK, LOW PROFILE, FINE PITCH | Transferred | QFP | Yes | 3.3 V | e3 | Yes | EAR99 | Matte Tin (Sn) - annealed | 8542.32.00.41 | QUAD | GULL WING | 260 | 1 | 0.5 mm | compliant | 30 | 100 | S-PQFP-G100 | Not Qualified | 3.6 V | COMMERCIAL | 3 V | 2 | ASYNCHRONOUS | 0.19 mA | 32KX16 | 3-STATE | 1.6 mm | 16 | 0.003 A | 524288 bit | PARALLEL | COMMON | MULTI-PORT SRAM | 3 V | 14 mm | 14 mm | |||||||||||||||||||||||||
![]() | Mfr Part No M5M51288BJ-15 | Mitsubishi Electric | Datasheet | - | - | Min: 1 Mult: 1 | YES | 32 | 15 ns | MITSUBISHI ELECTRIC CORP | 131072 words | 128000 | 70 °C | PLASTIC/EPOXY | SOJ | SOJ, SOJ32,.44 | SOJ32,.44 | RECTANGULAR | SMALL OUTLINE | Obsolete | SOJ | No | 5 V | e0 | No | 3A991.B.2.B | TIN LEAD | 8542.32.00.41 | DUAL | J BEND | 1 | 1.27 mm | unknown | 32 | R-PDSO-J32 | Not Qualified | 5.5 V | COMMERCIAL | 4.5 V | 1 | ASYNCHRONOUS | 0.19 mA | 128KX8 | 3-STATE | 8 | 0.01 A | 1048576 bit | PARALLEL | COMMON | STANDARD SRAM | 4.5 V | YES | ||||||||||||||||||||||||||||||
![]() | Mfr Part No NN5118165AJ-50 | United Microelectronics Corporation | Datasheet | - | - | Min: 1 Mult: 1 | YES | 42 | 50 ns | NIPPON STEEL SEMICONDUCTOR CORP | 1048576 words | 1000000 | 70 °C | PLASTIC/EPOXY | SOJ | SOJ, SOJ42,.44 | SOJ42,.44 | RECTANGULAR | SMALL OUTLINE | Obsolete | No | 5 V | e0 | EAR99 | TIN LEAD | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | 8542.32.00.02 | DUAL | J BEND | 1 | 1.27 mm | unknown | R-PDSO-J42 | Not Qualified | 5.5 V | COMMERCIAL | 4.5 V | 1 | ASYNCHRONOUS | 0.19 mA | 1MX16 | 3-STATE | 16 | 0.001 A | 16777216 bit | COMMON | EDO DRAM | 1024 | FAST PAGE WITH EDO | NO | ||||||||||||||||||||||||||||||||
![]() | Mfr Part No IS41LV16100S-45TI | Integrated Silicon Solution Inc | Datasheet | - | - | Min: 1 Mult: 1 | YES | 44 | 45 ns | INTEGRATED SILICON SOLUTION INC | 1048576 words | 1000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TSOP2 | TSOP2-50/44 | TSOP44/50,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | No | 3.3 V | e0 | EAR99 | Tin/Lead (Sn/Pb) | RAS ONLY/CAS BEFORE RAS/HIDDEN /SELF REFRESH | 8542.32.00.02 | DUAL | GULL WING | 1 | compliant | R-PDSO-G44 | Not Qualified | 3.6 V | INDUSTRIAL | 3 V | 1 | ASYNCHRONOUS | 0.19 mA | 1MX16 | 3-STATE | 16 | 0.0005 A | 16777216 bit | COMMON | EDO DRAM | 1024 | FAST PAGE WITH EDO | YES | ||||||||||||||||||||||||||||||||
![]() | Mfr Part No NT5CC256M8GN-CG | Nanya Technology Corporation | Datasheet | - | - | Min: 1 Mult: 1 | YES | 78 | 0.255 ns | 667 MHz | NANYA TECHNOLOGY CORP | 268435456 words | 256000000 | 85 °C | PLASTIC/EPOXY | TFBGA | TFBGA, BGA78,9X13,32 | BGA78,9X13,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | BGA | Yes | 1.35 V | EAR99 | AUTO/SELF REFRESH | 8542.32.00.36 | BOTTOM | BALL | NOT SPECIFIED | 1 | 0.8 mm | unknown | NOT SPECIFIED | 78 | R-PBGA-B78 | Not Qualified | 1.45 V | OTHER | 1.283 V | 1 | SYNCHRONOUS | 0.19 mA | 256MX8 | 3-STATE | 1.2 mm | 8 | 0.01 A | 2147483648 bit | COMMON | DDR3L DRAM | 8192 | 4,8 | 4,8 | MULTI BANK PAGE BURST | YES | 10.5 mm | 8 mm | ||||||||||||||||||||||||
![]() | Mfr Part No IS41C16256-45KI | Integrated Silicon Solution Inc | Datasheet | - | - | Min: 1 Mult: 1 | YES | 40 | 45 ns | INTEGRATED SILICON SOLUTION INC | 262144 words | 256000 | 85 °C | -40 °C | PLASTIC/EPOXY | SOJ | SOJ, SOJ40,.44 | SOJ40,.44 | RECTANGULAR | SMALL OUTLINE | Active | No | 5 V | e0 | EAR99 | Tin/Lead (Sn/Pb) | 8542.32.00.02 | DUAL | J BEND | 1.27 mm | compliant | R-PDSO-J40 | Not Qualified | INDUSTRIAL | 0.19 mA | 256KX16 | 3-STATE | 16 | 0.001 A | 4194304 bit | COMMON | EDO DRAM | 512 | NO | ||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No NT5CB64M16FP-DIH | Nanya Technology Corporation | Datasheet | - | - | Min: 1 Mult: 1 | YES | 96 | 0.225 ns | 800 MHz | NANYA TECHNOLOGY CORP | 67108864 words | 64000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TFBGA | TFBGA, BGA96,9X16,32 | BGA96,9X16,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | Yes | 1.5 V | EAR99 | AUTO/SELF REFRESH | 8542.32.00.32 | BOTTOM | BALL | NOT SPECIFIED | 1 | 0.8 mm | compliant | NOT SPECIFIED | R-PBGA-B96 | Not Qualified | 1.575 V | INDUSTRIAL | 1.425 V | 1 | SYNCHRONOUS | 0.19 mA | 64MX16 | 3-STATE | 1.2 mm | 16 | 0.01 A | 1073741824 bit | COMMON | DDR3 DRAM | 8192 | 8 | 8 | MULTI BANK PAGE BURST | YES | 13 mm | 9 mm | |||||||||||||||||||||||||
![]() | Mfr Part No IDT7130SA45L52 | Integrated Device Technology Inc | Datasheet | - | - | Min: 1 Mult: 1 | YES | 52 | 45 ns | INTEGRATED DEVICE TECHNOLOGY INC | 1024 words | 1000 | 70 °C | CERAMIC, METAL-SEALED COFIRED | QCCN | QCCN, LCC52,.75SQ | LCC52,.75SQ | SQUARE | CHIP CARRIER | Obsolete | LCC | No | 5 V | e0 | No | EAR99 | TIN LEAD | INTERRUPT FLAG; AUTOMATIC POWER-DOWN | 8542.32.00.41 | QUAD | NO LEAD | 1 | 1.27 mm | not_compliant | 52 | S-CQCC-N52 | Not Qualified | 5.5 V | COMMERCIAL | 4.5 V | 2 | ASYNCHRONOUS | 0.19 mA | 1KX8 | 3-STATE | 2.2098 mm | 8 | 0.015 A | 8192 bit | PARALLEL | COMMON | MULTI-PORT SRAM | 4.5 V | YES | 19.05 mm | 19.05 mm | ||||||||||||||||||||||||||
![]() | Mfr Part No GS84032AGT-100 | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | YES | 100 | 12 ns | 100 MHz | GSI TECHNOLOGY | GSI Technology | GS84032AGT-100 | 3 | 131072 words | 128000 | 70 °C | PLASTIC/EPOXY | LQFP | LQFP, QFP100,.63X.87 | QFP100,.63X.87 | RECTANGULAR | FLATPACK, LOW PROFILE | Obsolete | QFP | NOT SPECIFIED | 5.67 | Yes | 3.3 V | e3 | Yes | 3A991.B.2.B | PURE MATTE TIN | FLOW-THROUGH OR PIPELINED ARCHITECTURE | 8542.32.00.41 | SRAMs | CMOS | QUAD | GULL WING | 260 | 1 | 0.65 mm | compliant | 100 | R-PQFP-G100 | Not Qualified | 3.6 V | 2.5/3.3,3.3 V | COMMERCIAL | 3 V | SYNCHRONOUS | 0.19 mA | 128KX32 | 3-STATE | 1.6 mm | 32 | 0.02 A | 4194304 bit | PARALLEL | COMMON | CACHE SRAM | 3.14 V | 20 mm | 14 mm | ||||||||||||||||||
![]() | Mfr Part No GS840H18AB-100 | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | YES | 119 | 12 ns | 100 MHz | GSI TECHNOLOGY | GSI Technology | GS840H18AB-100 | 3 | 262144 words | 256000 | 70 °C | PLASTIC/EPOXY | BGA | BGA, BGA119,7X17,50 | BGA119,7X17,50 | RECTANGULAR | GRID ARRAY | Active | BGA | NOT SPECIFIED | 5.21 | Compliant | No | 3.3 V | e0 | No | 3A991.B.2.B | Tin/Lead (Sn/Pb) | 70 °C | 0 °C | FLOW-THROUGH OR PIPELINED ARCHITECTURE | 8542.32.00.41 | SRAMs | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 1.27 mm | compliant | 119 | R-PBGA-B119 | Not Qualified | 3.3 V | 3.6 V | 2.5/3.3,3.3 V | COMMERCIAL | 3 V | 2 | SYNCHRONOUS | 0.19 mA | 256KX18 | 3-STATE | 2.19 mm | 18 | 18 b | 4.5 Mb | 0.02 A | 4.5 | PARALLEL | COMMON | CACHE SRAM | 3.14 V | 22 mm | 14 mm | No | ||||||||||
![]() | Mfr Part No GS840H32AB-100 | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | YES | 119 | 12 ns | 100 MHz | GSI TECHNOLOGY | GSI Technology | GS840H32AB-100 | 3 | 131072 words | 128000 | 70 °C | PLASTIC/EPOXY | BGA | BGA, BGA119,7X17,50 | BGA119,7X17,50 | RECTANGULAR | GRID ARRAY | Active | BGA | NOT SPECIFIED | 5.21 | No | 3.3 V | e0 | No | 3A991.B.2.B | Tin/Lead (Sn/Pb) | FLOW-THROUGH OR PIPELINED ARCHITECTURE | 8542.32.00.41 | SRAMs | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 1.27 mm | compliant | 119 | R-PBGA-B119 | Not Qualified | 3.6 V | 2.5/3.3,3.3 V | COMMERCIAL | 3 V | SYNCHRONOUS | 0.19 mA | 128KX32 | 3-STATE | 2.19 mm | 32 | 0.02 A | 4194304 bit | PARALLEL | COMMON | CACHE SRAM | 3.14 V | 22 mm | 14 mm | ||||||||||||||||||
![]() | Mfr Part No GS840H18AGT-100 | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 8 Weeks | YES | 100 | 12 ns | 100 MHz | GSI TECHNOLOGY | GSI Technology | GS840H18AGT-100 | 3 | 262144 words | 256000 | 70 °C | PLASTIC/EPOXY | LQFP | LQFP, QFP100,.63X.87 | QFP100,.63X.87 | RECTANGULAR | FLATPACK, LOW PROFILE | Obsolete | QFP | NOT SPECIFIED | 5.7 | Yes | 3.3 V | e3 | Yes | 3A991.B.2.B | PURE MATTE TIN | FLOW-THROUGH OR PIPELINED ARCHITECTURE | 8542.32.00.41 | SRAMs | CMOS | QUAD | GULL WING | 260 | 1 | 0.65 mm | compliant | 100 | R-PQFP-G100 | Not Qualified | 3.6 V | 2.5/3.3,3.3 V | COMMERCIAL | 3 V | SYNCHRONOUS | 0.19 mA | 256KX18 | 3-STATE | 1.6 mm | 18 | 0.02 A | 4718592 bit | PARALLEL | COMMON | CACHE SRAM | 3.14 V | 20 mm | 14 mm | |||||||||||||||||
![]() | Mfr Part No GS840H36AGT-100 | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 8 Weeks | YES | 100 | 12 ns | 100 MHz | GSI TECHNOLOGY | GSI Technology | GS840H36AGT-100 | 3 | 131072 words | 128000 | 70 °C | PLASTIC/EPOXY | LQFP | LQFP, QFP100,.63X.87 | QFP100,.63X.87 | RECTANGULAR | FLATPACK, LOW PROFILE | Obsolete | QFP | NOT SPECIFIED | 5.69 | Compliant | Yes | 3.3 V | e3 | Yes | 3A991.B.2.B | PURE MATTE TIN | 70 °C | 0 °C | FLOW-THROUGH OR PIPELINED ARCHITECTURE | 8542.32.00.41 | SRAMs | CMOS | QUAD | GULL WING | 260 | 1 | 0.65 mm | compliant | 100 | R-PQFP-G100 | Not Qualified | 3.3 V | 3.6 V | 2.5/3.3,3.3 V | COMMERCIAL | 3 V | 4 | SYNCHRONOUS | 0.19 mA | 128KX36 | 3-STATE | 1.6 mm | 36 | 17 b | 4.5 Mb | 0.02 A | 4718592 bit | PARALLEL | COMMON | CACHE SRAM | 3.14 V | 20 mm | 14 mm | No | |||||||||
![]() | Mfr Part No GS840H32AGT-100 | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 8 Weeks | YES | 100 | 12 ns | 100 MHz | GSI TECHNOLOGY | GSI Technology | GS840H32AGT-100 | 3 | 131072 words | 128000 | 70 °C | PLASTIC/EPOXY | LQFP | LQFP, QFP100,.63X.87 | QFP100,.63X.87 | RECTANGULAR | FLATPACK, LOW PROFILE | Obsolete | QFP | NOT SPECIFIED | 5.7 | Compliant | Yes | 3.3 V | e3 | Yes | 3A991.B.2.B | PURE MATTE TIN | 70 °C | 0 °C | FLOW-THROUGH OR PIPELINED ARCHITECTURE | 8542.32.00.41 | SRAMs | CMOS | QUAD | GULL WING | 260 | 1 | 0.65 mm | compliant | 100 | R-PQFP-G100 | Not Qualified | 3.3 V | 3.6 V | 2.5/3.3,3.3 V | COMMERCIAL | 3 V | 4 | SYNCHRONOUS | 0.19 mA | 128KX32 | 3-STATE | 1.6 mm | 32 | 17 b | 4 Mb | 0.02 A | 4194304 bit | PARALLEL | COMMON | CACHE SRAM | 3.14 V | 20 mm | 14 mm | No | |||||||||
![]() | Mfr Part No GS840H36AB-100 | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 8 Weeks | YES | 119 | 12 ns | 100 MHz | GSI TECHNOLOGY | GSI Technology | GS840H36AB-100 | 3 | 131072 words | 128000 | 70 °C | PLASTIC/EPOXY | BGA | BGA, BGA119,7X17,50 | BGA119,7X17,50 | RECTANGULAR | GRID ARRAY | Active | BGA | NOT SPECIFIED | 5.28 | No | 3.3 V | e0 | No | 3A991.B.2.B | Tin/Lead (Sn/Pb) | FLOW-THROUGH OR PIPELINED ARCHITECTURE | 8542.32.00.41 | SRAMs | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 1.27 mm | compliant | 119 | R-PBGA-B119 | Not Qualified | 3.6 V | 2.5/3.3,3.3 V | COMMERCIAL | 3 V | SYNCHRONOUS | 0.19 mA | 128KX36 | 3-STATE | 2.19 mm | 36 | 0.02 A | 4718592 bit | PARALLEL | COMMON | CACHE SRAM | 3.14 V | 22 mm | 14 mm | |||||||||||||||||
![]() | Mfr Part No UPD444016G5-12-7JF(A) | Renesas | Datasheet | - | - | Min: 1 Mult: 1 | YES | 44 | 12 ns | RENESAS ELECTRONICS CORP | Renesas Electronics Corporation | UPD444016G5-12-7JF-A | 256 words | 256 | 70 °C | PLASTIC/EPOXY | VSSOP | VSSOP, TSOP44,.46,32 | TSOP44,.46,32 | RECTANGULAR | SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH | Obsolete | TSOP2 | NOT SPECIFIED | 5.53 | Non-Compliant | Yes | 5 V | e6 | Yes | EAR99 | TIN BISMUTH | 8542.32.00.41 | SRAMs | CMOS | DUAL | GULL WING | NOT SPECIFIED | 1 | 0.8 mm | unknown | 44 | R-PDSO-G44 | Not Qualified | 5.5 V | 5 V | COMMERCIAL | 4.5 V | SYNCHRONOUS | 0.19 mA | 256X16 | 3-STATE | 0.97 mm | 16 | 0.01 A | 4096 bit | PARALLEL | COMMON | STANDARD SRAM | 4.5 V | 18.63 mm | 10.16 mm | ||||||||||||||||||||
![]() | Mfr Part No GS832036T-166I | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | YES | 100 | 8 ns | 166 MHz | GSI TECHNOLOGY | GSI Technology | GS832036T-166I | 3 | 1048576 words | 1000000 | 85 °C | -40 °C | PLASTIC/EPOXY | LQFP | LQFP, QFP100,.63X.87 | QFP100,.63X.87 | RECTANGULAR | FLATPACK, LOW PROFILE | Obsolete | QFP | NOT SPECIFIED | 5.77 | Non-Compliant | No | 2.5 V | 3A991.B.2.B | FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY | 8542.32.00.41 | SRAMs | CMOS | QUAD | GULL WING | NOT SPECIFIED | 1 | 0.65 mm | compliant | 100 | R-PQFP-G100 | Not Qualified | 2.7 V | 2.5/3.3 V | INDUSTRIAL | 2.3 V | SYNCHRONOUS | 0.19 mA | 1MX36 | 3-STATE | 1.6 mm | 36 | 0.08 A | 37748736 bit | PARALLEL | COMMON | CACHE SRAM | 3.14 V | 20 mm | 14 mm | |||||||||||||||||||
![]() | Mfr Part No GS8321Z36GE-133 | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | YES | 165 | 8.5 ns | 133 MHz | GSI TECHNOLOGY | GSI Technology | GS8321Z36GE-133 | 3 | 1048576 words | 1000000 | 70 °C | PLASTIC/EPOXY | LBGA | 15 X 17 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165 | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | Obsolete | BGA | NOT SPECIFIED | 8.45 | Yes | 2.5 V | e1 | Yes | 3A991.B.2.B | Tin/Silver/Copper (Sn/Ag/Cu) | FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY | 8542.32.00.41 | SRAMs | CMOS | BOTTOM | BALL | 260 | 1 | 1 mm | compliant | 165 | R-PBGA-B165 | Not Qualified | 2.7 V | 2.5/3.3 V | COMMERCIAL | 2.3 V | SYNCHRONOUS | 0.19 mA | 1MX36 | 3-STATE | 1.5 mm | 36 | 0.06 A | 37748736 bit | PARALLEL | COMMON | ZBT SRAM | 2.3 V | 17 mm | 15 mm | ||||||||||||||||||
![]() | Mfr Part No GS8321Z36E-133 | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | YES | 165 | 8.5 ns | 133 MHz | GSI TECHNOLOGY | GSI Technology | GS8321Z36E-133 | 3 | 1048576 words | 1000000 | 70 °C | PLASTIC/EPOXY | LBGA | 15 X 17 MM, 1 MM PITCH, FPBGA-165 | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | Obsolete | BGA | NOT SPECIFIED | 5.68 | Compliant | No | 2.5 V | No | 3A991.B.2.B | 70 °C | 0 °C | FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY | 8542.32.00.41 | SRAMs | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 1 mm | compliant | 165 | R-PBGA-B165 | Not Qualified | 2.7 V | 2.5/3.3 V | COMMERCIAL | 2.3 V | 1 | SYNCHRONOUS | 0.19 mA | 1MX36 | 3-STATE | 1.5 mm | 36 | 20 b | 36 Mb | 0.06 A | 37748736 bit | PARALLEL | COMMON | ZBT SRAM | 2.3 V | 17 mm | 15 mm | No | |||||||||||||
![]() | Mfr Part No GS84018AB-100 | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | YES | 119 | 12 ns | 100 MHz | GSI TECHNOLOGY | GSI Technology | GS84018AB-100 | 3 | 262144 words | 256000 | 70 °C | PLASTIC/EPOXY | BGA | BGA, BGA119,7X17,50 | BGA119,7X17,50 | RECTANGULAR | GRID ARRAY | Obsolete | BGA | NOT SPECIFIED | 5.72 | No | 3.3 V | e0 | No | 3A991.B.2.B | Tin/Lead (Sn/Pb) | FLOW-THROUGH OR PIPELINED ARCHITECTURE | 8542.32.00.41 | SRAMs | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 1.27 mm | compliant | 119 | R-PBGA-B119 | Not Qualified | 3.6 V | 2.5/3.3,3.3 V | COMMERCIAL | 3 V | SYNCHRONOUS | 0.19 mA | 256KX18 | 3-STATE | 2.19 mm | 18 | 0.02 A | 4718592 bit | PARALLEL | COMMON | CACHE SRAM | 3.14 V | 22 mm | 14 mm |
IDT70V27L35PFG
Integrated Device Technology Inc
Package:Memory
Price: please inquire
M5M51288BJ-15
Mitsubishi Electric
Package:Memory
Price: please inquire
NN5118165AJ-50
United Microelectronics Corporation
Package:Memory
Price: please inquire
IS41LV16100S-45TI
Integrated Silicon Solution Inc
Package:Memory
Price: please inquire
NT5CC256M8GN-CG
Nanya Technology Corporation
Package:Memory
Price: please inquire
IS41C16256-45KI
Integrated Silicon Solution Inc
Package:Memory
Price: please inquire
NT5CB64M16FP-DIH
Nanya Technology Corporation
Package:Memory
Price: please inquire
IDT7130SA45L52
Integrated Device Technology Inc
Package:Memory
Price: please inquire
GS84032AGT-100
GSI Technology
Package:Memory
Price: please inquire
GS840H18AB-100
GSI Technology
Package:Memory
Price: please inquire
GS840H32AB-100
GSI Technology
Package:Memory
Price: please inquire
GS840H18AGT-100
GSI Technology
Package:Memory
Price: please inquire
GS840H36AGT-100
GSI Technology
Package:Memory
Price: please inquire
GS840H32AGT-100
GSI Technology
Package:Memory
Price: please inquire
GS840H36AB-100
GSI Technology
Package:Memory
Price: please inquire
UPD444016G5-12-7JF(A)
Renesas
Package:Memory
Price: please inquire
GS832036T-166I
GSI Technology
Package:Memory
Price: please inquire
GS8321Z36GE-133
GSI Technology
Package:Memory
Price: please inquire
GS8321Z36E-133
GSI Technology
Package:Memory
Price: please inquire
GS84018AB-100
GSI Technology
Package:Memory
Price: please inquire
