The category is 'Memory'
Memory (7)
- All Manufacturers
- Access Time-Max
- Ihs Manufacturer
- JESD-30 Code
- Memory Density
- Memory IC Type
- Memory Width
- Number of Terminals
- Number of Words
- Number of Words Code
- Organization
- Package Body Material
- Supply Current-Max
- Supply Current-Max:
0.195 mA
Image | Part Number | Manufacturer | Datasheet | Availability | Pricing(USD) | Quantity | RoHS | Mounting Type | Surface Mount | Number of Terminals | Access Time-Max | Clock Frequency-Max (fCLK) | EEPROM | Ihs Manufacturer | Manufacturer | Manufacturer Part Number | Moisture Sensitivity Levels | MSL | Number of Words | Number of Words Code | Operating Temperature-Max | Operating Temperature-Min | Package Body Material | Package Code | Package Description | Package Equivalence Code | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | RAM | Reflow Temperature-Max (s) | Risk Rank | RoHS | Rohs Code | Samacsys Description | Supply Voltage-Nom (Vsup) | Series | JESD-609 Code | Pbfree Code | ECCN Code | Terminal Finish | Additional Feature | HTS Code | Subcategory | Technology | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Terminal Pitch | Reach Compliance Code | Pin Count | JESD-30 Code | Qualification Status | Supply Voltage-Max (Vsup) | Power Supplies | Temperature Grade | Supply Voltage-Min (Vsup) | Note | Number of Ports | Operating Mode | Supply Current-Max | Organization | Output Characteristics | Seated Height-Max | Memory Width | Standby Current-Max | Memory Density | Parallel/Serial | I/O Type | Memory IC Type | Standby Voltage-Min | Refresh Cycles | Sequential Burst Length | Interleaved Burst Length | Access Mode | Self Refresh | Length | Width |
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![]() | Mfr Part No W971GG6JB-3 | Winbond | Datasheet | - | - | Min: 1 Mult: 1 | YES | 84 | 0.45 ns | 333 MHz | WINBOND ELECTRONICS CORP | Winbond Electronics Corp | W971GG6JB-3 | 67108864 words | 64000000 | 85 °C | PLASTIC/EPOXY | TFBGA | TFBGA, BGA84,9X15,32 | BGA84,9X15,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | BGA | NOT SPECIFIED | 5.45 | Yes | 1.8 V | EAR99 | AUTO/SELF REFRESH | 8542.32.00.02 | DRAMs | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 0.8 mm | compliant | 84 | R-PBGA-B84 | Not Qualified | 1.9 V | 1.8 V | OTHER | 1.7 V | 1 | SYNCHRONOUS | 0.195 mA | 64MX16 | 3-STATE | 1.2 mm | 16 | 0.01 A | 1073741824 bit | COMMON | DDR DRAM | 8192 | 4,8 | 4,8 | MULTI BANK PAGE BURST | YES | 12.5 mm | 8 mm | ||||||||||||||||
![]() | Mfr Part No IDT70V25L20PFGI | Renesas | Datasheet | - | - | Min: 1 Mult: 1 | SMD | YES | 100 | 20 ns | 256 x 8 | INTEGRATED DEVICE TECHNOLOGY INC | Integrated Device Technology Inc | IDT70V25L20PFGI | 3 | n/a | 8192 words | 8000 | 85 °C | -40 °C | PLASTIC/EPOXY | LFQFP | LFQFP, QFP100,.63SQ,20 | QFP100,.63SQ,20 | SQUARE | FLATPACK, LOW PROFILE, FINE PITCH | Active | QFP | 512 x 8 | 30 | 5.15 | Yes | Yes | IDT IDT70V25L20PFGI SRAM Memory, 128kbit, 3 u2192 3.6 V, 20ns 100-Pin TQFP | 3.3 V | PIC18 | e3 | Yes | EAR99 | Matte Tin (Sn) - annealed | 8542.32.00.41 | SRAMs | CMOS | QUAD | GULL WING | 260 | 1 | 0.5 mm | compliant | 100 | S-PQFP-G100 | Not Qualified | 3.6 V | 3.3 V | INDUSTRIAL | 3 V | - | 2 | ASYNCHRONOUS | 0.195 mA | 8KX16 | 3-STATE | 1.6 mm | 16 | 0.005 A | 131072 bit | PARALLEL | COMMON | DUAL-PORT SRAM | 3 V | 14 mm | 14 mm | ||||||||
![]() | Mfr Part No MCM6706BRJ8 | Freescale Semiconductor | Datasheet | - | - | Min: 1 Mult: 1 | YES | 32 | 8 ns | MOTOROLA SEMICONDUCTOR PRODUCTS | 32768 words | 32000 | 70 °C | PLASTIC/EPOXY | SOJ | SOJ, SOJ32,.34 | SOJ32,.34 | RECTANGULAR | SMALL OUTLINE | Obsolete | No | 5 V | e0 | Tin/Lead (Sn/Pb) | DUAL | J BEND | 1.27 mm | unknown | R-PDSO-J32 | Not Qualified | 5 V | COMMERCIAL | ASYNCHRONOUS | 0.195 mA | 32KX8 | 3-STATE | 8 | 262144 bit | PARALLEL | COMMON | STANDARD SRAM | |||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No MCM6946YJ8 | Freescale Semiconductor | Datasheet | - | - | Min: 1 Mult: 1 | YES | 36 | 8 ns | MOTOROLA SEMICONDUCTOR PRODUCTS | 524288 words | 512000 | 70 °C | PLASTIC/EPOXY | SOJ | SOJ, SOJ36,.44 | SOJ36,.44 | RECTANGULAR | SMALL OUTLINE | Obsolete | No | 3.3 V | e0 | Tin/Lead (Sn/Pb) | DUAL | J BEND | 1.27 mm | unknown | R-PDSO-J36 | Not Qualified | 3.3 V | COMMERCIAL | ASYNCHRONOUS | 0.195 mA | 512KX8 | 3-STATE | 8 | 0.005 A | 4194304 bit | PARALLEL | COMMON | STANDARD SRAM | 3 V | |||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No HM5316123F-7 | Hitachi Ltd | Datasheet | - | - | Min: 1 Mult: 1 | YES | 64 | 70 ns | HITACHI LTD | 131072 words | 128000 | 70 °C | PLASTIC/EPOXY | SOP | SOP, SOP64,.54,32 | SOP64,.54,32 | RECTANGULAR | SMALL OUTLINE | Obsolete | SSOP | 5 V | EAR99 | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 256 X 16 SAM PORT | 8542.32.00.02 | DUAL | GULL WING | 1 | 0.8 mm | unknown | 64 | R-PDSO-G64 | Not Qualified | 5.5 V | COMMERCIAL | 4.5 V | 2 | ASYNCHRONOUS | 0.195 mA | 128KX16 | 3-STATE | 16 | 0.085 A | 2097152 bit | VIDEO DRAM | 512 | FAST PAGE | |||||||||||||||||||||||||||||||||
![]() | Mfr Part No K4B1G1646G-BCK0 | Samsung | Datasheet | 23 | - | Min: 1 Mult: 1 | YES | 96 | 0.225 ns | 800 MHz | SAMSUNG SEMICONDUCTOR INC | Samsung Semiconductor | K4B1G1646G-BCK0 | 1 | 67108864 words | 64000000 | PLASTIC/EPOXY | FBGA | FBGA, BGA96,9X16,32 | BGA96,9X16,32 | RECTANGULAR | GRID ARRAY, FINE PITCH | Obsolete | NOT SPECIFIED | 5.8 | Yes | 1.5 V | e3 | Yes | MATTE TIN | DRAMs | CMOS | BOTTOM | BALL | 225 | 0.8 mm | compliant | R-PBGA-B96 | Not Qualified | 1.5 V | 0.195 mA | 64MX16 | 3-STATE | 16 | 0.01 A | 1073741824 bit | COMMON | DDR DRAM | 8192 | 4,8 | 4,8 | |||||||||||||||||||||||||||||
![]() | Mfr Part No CY7C009V-20AI | Cypress Semiconductor | Datasheet | - | - | Min: 1 Mult: 1 | YES | 100 | 20 ns | CYPRESS SEMICONDUCTOR CORP | Cypress Semiconductor | CY7C009V-20AI | 3 | 131072 words | 128000 | 85 °C | -40 °C | PLASTIC/EPOXY | LFQFP | PLASTIC, TQFP-100 | QFP100,.63SQ,20 | SQUARE | FLATPACK, LOW PROFILE, FINE PITCH | Obsolete | QFP | 30 | 5.84 | No | 3.3 V | e0 | 3A991.B.2.B | TIN LEAD | AUTOMATIC POWER-DOWN | 8542.32.00.41 | SRAMs | CMOS | QUAD | GULL WING | 240 | 1 | 0.5 mm | not_compliant | 100 | S-PQFP-G100 | Not Qualified | 3.6 V | 3.3 V | INDUSTRIAL | 3 V | 2 | ASYNCHRONOUS | 0.195 mA | 128KX8 | 3-STATE | 1.6 mm | 8 | 0.00005 A | 1048576 bit | PARALLEL | COMMON | DUAL-PORT SRAM | 3 V | 14 mm | 14 mm |
W971GG6JB-3
Winbond
Package:Memory
Price: please inquire
IDT70V25L20PFGI
Renesas
Package:Memory
Price: please inquire
MCM6706BRJ8
Freescale Semiconductor
Package:Memory
Price: please inquire
MCM6946YJ8
Freescale Semiconductor
Package:Memory
Price: please inquire
HM5316123F-7
Hitachi Ltd
Package:Memory
Price: please inquire
K4B1G1646G-BCK0
Samsung
Package:Memory
Price: please inquire
CY7C009V-20AI
Cypress Semiconductor
Package:Memory
Price: please inquire
