The category is 'Memory'
Memory (5)
- All Manufacturers
- Access Time-Max
- Additional Feature
- ECCN Code
- HTS Code
- I/O Type
- Ihs Manufacturer
- JESD-30 Code
- Length
- Memory Density
- Memory IC Type
- Number of Functions
- Supply Current-Max
- Supply Current-Max:
0.205 mA
Image | Part Number | Manufacturer | Datasheet | Availability | Pricing(USD) | Quantity | RoHS | Surface Mount | Number of Terminals | Access Time-Max | Clock Frequency-Max (fCLK) | Ihs Manufacturer | Manufacturer | Manufacturer Part Number | Moisture Sensitivity Levels | Number of Words | Number of Words Code | Operating Temperature-Max | Operating Temperature-Min | Package Body Material | Package Code | Package Description | Package Equivalence Code | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Reflow Temperature-Max (s) | Risk Rank | RoHS | Rohs Code | Supply Voltage-Nom (Vsup) | JESD-609 Code | Pbfree Code | ECCN Code | Terminal Finish | Additional Feature | HTS Code | Subcategory | Technology | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Terminal Pitch | Reach Compliance Code | Time@Peak Reflow Temperature-Max (s) | Pin Count | JESD-30 Code | Qualification Status | Supply Voltage-Max (Vsup) | Power Supplies | Temperature Grade | Supply Voltage-Min (Vsup) | Number of Ports | Operating Mode | Supply Current-Max | Organization | Output Characteristics | Seated Height-Max | Memory Width | Standby Current-Max | Memory Density | Parallel/Serial | I/O Type | Memory IC Type | Standby Voltage-Min | Refresh Cycles | Sequential Burst Length | Interleaved Burst Length | Access Mode | Self Refresh | Length | Width |
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![]() | Mfr Part No HYB25D512800CE-6 | Infineon | Datasheet | - | - | Min: 1 Mult: 1 | YES | 66 | 0.7 ns | 166 MHz | QIMONDA AG | Qimonda AG | HYB25D512800CE-6 | 1 | 67108864 words | 64000000 | 85 °C | PLASTIC/EPOXY | TSOP2 | TSOP2, TSSOP66,.46 | TSSOP66,.46 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | TSOP2 | 40 | 5.63 | Non-Compliant | Yes | 2.5 V | e3 | EAR99 | Matte Tin (Sn) | AUTO/SELF REFRESH | 8542.32.00.28 | DRAMs | CMOS | DUAL | GULL WING | 260 | 1 | 0.65 mm | unknown | 66 | R-PDSO-G66 | Not Qualified | 2.7 V | 2.5 V | OTHER | 2.3 V | 1 | SYNCHRONOUS | 0.205 mA | 64MX8 | 3-STATE | 1.2 mm | 8 | 0.0046 A | 536870912 bit | COMMON | DDR DRAM | 8192 | 2,4,8 | 2,4,8 | FOUR BANK PAGE BURST | YES | 22.22 mm | 10.16 mm | ||||||
![]() | Mfr Part No CY7C1214F-100AC | Cypress Semiconductor | Datasheet | - | - | Min: 1 Mult: 1 | YES | 100 | 8.5 ns | 100 MHz | CYPRESS SEMICONDUCTOR CORP | 3 | 32768 words | 32000 | 70 °C | PLASTIC/EPOXY | LQFP | LQFP, QFP100,.63X.87 | QFP100,.63X.87 | RECTANGULAR | FLATPACK, LOW PROFILE | Obsolete | QFP | No | 3.3 V | e0 | 3A991.B.2.B | TIN LEAD | FLOW-THROUGH ARCHITECTURE | 8542.32.00.41 | QUAD | GULL WING | 1 | 0.65 mm | not_compliant | 100 | R-PQFP-G100 | Not Qualified | 3.6 V | COMMERCIAL | 3.135 V | SYNCHRONOUS | 0.205 mA | 32KX32 | 3-STATE | 1.6 mm | 32 | 0.018 A | 1048576 bit | PARALLEL | COMMON | CACHE SRAM | 3.14 V | 20 mm | 14 mm | |||||||||||||||||||
![]() | Mfr Part No CY7C1325G-133AXI | Cypress Semiconductor | Datasheet | - | - | Min: 1 Mult: 1 | YES | 100 | 6.5 ns | CYPRESS SEMICONDUCTOR CORP | 3 | 262144 words | 256000 | 85 °C | -40 °C | PLASTIC/EPOXY | LQFP | 14 X 20 MM, 1.40 MM HEIGHT, LEAD FREE, TQFP-100 | QFP100,.63X.87 | RECTANGULAR | FLATPACK, LOW PROFILE | Obsolete | QFP | Yes | 3.3 V | e3 | 3A991.B.2.A | MATTE TIN | FLOW-THROUGH ARCHITECTURE | 8542.32.00.41 | QUAD | GULL WING | 260 | 1 | 0.65 mm | unknown | 40 | 100 | R-PQFP-G100 | Not Qualified | 3.63 V | INDUSTRIAL | 3.135 V | SYNCHRONOUS | 0.205 mA | 256KX18 | 3-STATE | 1.6 mm | 18 | 0.04 A | 4718592 bit | PARALLEL | COMMON | CACHE SRAM | 3.14 V | 20 mm | 14 mm | |||||||||||||||||
![]() | Mfr Part No H5TC4G63AFR-RDI | SK Hynix Inc | Datasheet | - | - | Min: 1 Mult: 1 | YES | 96 | 0.195 ns | 933 MHz | SK HYNIX INC | 268435456 words | 256000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TFBGA | TFBGA, BGA96,9X16,32 | BGA96,9X16,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | BGA | Yes | 1.35 V | EAR99 | AUTO/SELF REFRESH | 8542.32.00.36 | BOTTOM | BALL | NOT SPECIFIED | 1 | 0.8 mm | unknown | NOT SPECIFIED | 96 | R-PBGA-B96 | Not Qualified | 1.45 V | INDUSTRIAL | 1.283 V | 1 | SYNCHRONOUS | 0.205 mA | 256MX16 | 3-STATE | 1.2 mm | 16 | 0.013 A | 4294967296 bit | COMMON | DDR3L DRAM | 8192 | 4,8 | 4,8 | MULTI BANK PAGE BURST | YES | 13 mm | 9 mm | |||||||||||||||
![]() | Mfr Part No GS816032BGT-150 | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | YES | 100 | 7.5 ns | 150 MHz | GSI TECHNOLOGY | GSI Technology | GS816032BGT-150 | 3 | 524288 words | 512000 | 70 °C | PLASTIC/EPOXY | LQFP | LQFP, QFP100,.63X.87 | QFP100,.63X.87 | RECTANGULAR | FLATPACK, LOW PROFILE | Obsolete | QFP | NOT SPECIFIED | 5.67 | Yes | 2.5 V | e3 | Yes | 3A991.B.2.B | PURE MATTE TIN | FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY | 8542.32.00.41 | SRAMs | CMOS | QUAD | GULL WING | 260 | 1 | 0.65 mm | compliant | 100 | R-PQFP-G100 | Not Qualified | 2.7 V | 2.5/3.3 V | COMMERCIAL | 2.3 V | SYNCHRONOUS | 0.205 mA | 512KX32 | 3-STATE | 1.6 mm | 32 | 16777216 bit | PARALLEL | COMMON | CACHE SRAM | 2.3 V | 20 mm | 14 mm |
HYB25D512800CE-6
Infineon
Package:Memory
Price: please inquire
CY7C1214F-100AC
Cypress Semiconductor
Package:Memory
Price: please inquire
CY7C1325G-133AXI
Cypress Semiconductor
Package:Memory
Price: please inquire
H5TC4G63AFR-RDI
SK Hynix Inc
Package:Memory
Price: please inquire
GS816032BGT-150
GSI Technology
Package:Memory
Price: please inquire
