The category is 'Memory'
Memory (30)
- All Manufacturers
- Access Time-Max
- ECCN Code
- HTS Code
- I/O Type
- Ihs Manufacturer
- JESD-30 Code
- Memory Density
- Memory IC Type
- Memory Width
- Number of Terminals
- Number of Words Code
- Supply Current-Max
- Supply Current-Max:
0.21 mA
Image | Part Number | Manufacturer | Datasheet | Availability | Pricing(USD) | Quantity | RoHS | Mount | Surface Mount | Number of Pins | Number of Terminals | Access Time-Max | Clock Frequency-Max (fCLK) | Ihs Manufacturer | Manufacturer | Manufacturer Part Number | Memory Types | Moisture Sensitivity Levels | Number of Words | Number of Words Code | Operating Temperature-Max | Operating Temperature-Min | Package Body Material | Package Code | Package Description | Package Equivalence Code | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Reflow Temperature-Max (s) | Risk Rank | RoHS | Rohs Code | Supply Voltage-Nom (Vsup) | JESD-609 Code | Pbfree Code | ECCN Code | Terminal Finish | Max Operating Temperature | Min Operating Temperature | Additional Feature | HTS Code | Subcategory | Technology | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Terminal Pitch | Reach Compliance Code | Time@Peak Reflow Temperature-Max (s) | Pin Count | JESD-30 Code | Qualification Status | Operating Supply Voltage | Supply Voltage-Max (Vsup) | Power Supplies | Temperature Grade | Supply Voltage-Min (Vsup) | Interface | Max Supply Voltage | Min Supply Voltage | Number of Ports | Nominal Supply Current | Operating Mode | Supply Current-Max | Data Bus Width | Organization | Output Characteristics | Seated Height-Max | Memory Width | Address Bus Width | Density | Standby Current-Max | Memory Density | Max Frequency | Parallel/Serial | I/O Type | Memory IC Type | Standby Voltage-Min | Output Enable | Refresh Cycles | Sequential Burst Length | Interleaved Burst Length | Access Mode | Self Refresh | Length | Width | Radiation Hardening | Lead Free |
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![]() | Mfr Part No MT48LC4M16A2TG-75IT:G | Micron | Datasheet | - | - | Min: 1 Mult: 1 | YES | 54 | 5.4 ns | 133 MHz | MICRON TECHNOLOGY INC | Micron Technology Inc | MT48LC4M16A2TG-75IT:G | 4194304 words | 4000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TSOP2 | 0.400 INCH, PLASTIC, TSOP2-54 | TSOP54,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | TSOP2 | 30 | 5.39 | No | 3.3 V | e0 | No | EAR99 | Tin/Lead (Sn/Pb) | AUTO/SELF REFRESH | 8542.32.00.02 | DRAMs | CMOS | DUAL | GULL WING | 235 | 1 | 0.8 mm | unknown | 54 | R-PDSO-G54 | Not Qualified | 3.6 V | 3.3 V | INDUSTRIAL | 3 V | 1 | SYNCHRONOUS | 0.21 mA | 4MX16 | 3-STATE | 1.2 mm | 16 | 0.002 A | 67108864 bit | COMMON | SYNCHRONOUS DRAM | 4096 | 1,2,4,8,16 | 1,2,4,8 | FOUR BANK PAGE BURST | YES | 22.22 mm | 10.16 mm | |||||||||||||||||||||||
![]() | Mfr Part No W9425G6JH-4 | Winbond | Datasheet | 234 | - | Min: 1 Mult: 1 | YES | 66 | 0.7 ns | 250 MHz | WINBOND ELECTRONICS CORP | Winbond Electronics Corp | W9425G6JH-4 | 16777216 words | 16000000 | 70 °C | PLASTIC/EPOXY | TSOP2 | TSOP2, TSSOP66,.46 | TSSOP66,.46 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | TSOP2 | NOT SPECIFIED | 5.18 | Yes | 2.5 V | EAR99 | AUTO/SELF REFRESH | 8542.32.00.24 | DRAMs | CMOS | DUAL | GULL WING | NOT SPECIFIED | 1 | 0.65 mm | unknown | 66 | R-PDSO-G66 | Not Qualified | 2.7 V | 2.6 V | COMMERCIAL | 2.4 V | 1 | SYNCHRONOUS | 0.21 mA | 16MX16 | 3-STATE | 1.2 mm | 16 | 0.005 A | 268435456 bit | COMMON | DDR DRAM | 8192 | 2,4,8 | 2,4,8 | FOUR BANK PAGE BURST | YES | 22.22 mm | 10.16 mm | |||||||||||||||||||||||||||
![]() | Mfr Part No IDT7005L35J | Renesas | Datasheet | - | - | Min: 1 Mult: 1 | YES | 68 | 35 ns | INTEGRATED DEVICE TECHNOLOGY INC | Integrated Device Technology Inc | IDT7005L35J | RAM, SRAM | 1 | 8192 words | 8000 | 70 °C | PLASTIC/EPOXY | QCCJ | 0.950 X 0.950 INCH, 0.120 INCH HEIGHT, PLASTIC, LCC-68 | LDCC68,1.0SQ | SQUARE | CHIP CARRIER | Obsolete | LCC | 30 | 5.04 | Non-Compliant | No | 5 V | e0 | No | EAR99 | Tin/Lead (Sn85Pb15) | 70 °C | 0 °C | INTERRUPT FLAG; AUTOMATIC POWER-DOWN; SEMAPHORE; BATTERY BACKUP | 8542.32.00.41 | SRAMs | CMOS | QUAD | J BEND | 225 | 1 | 1.27 mm | not_compliant | 68 | S-PQCC-J68 | Not Qualified | 5.5 V | 5 V | COMMERCIAL | 4.5 V | Parallel | 2 | ASYNCHRONOUS | 0.21 mA | 8KX8 | 3-STATE | 4.572 mm | 8 | 0.0015 A | 65536 bit | PARALLEL | COMMON | DUAL-PORT SRAM | 2 V | YES | 24.2062 mm | 24.2062 mm | |||||||||||||||||||||
![]() | Mfr Part No HY57V281620FTP-5I | SK Hynix Inc | Datasheet | - | - | Min: 1 Mult: 1 | YES | 54 | 4.5 ns | 200 MHz | SK HYNIX INC | 8388608 words | 8000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TSOP | TSOP, TSOP54,.46,32 | TSOP54,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | Yes | 3.3 V | EAR99 | 8542.32.00.02 | DUAL | GULL WING | 0.8 mm | unknown | R-PDSO-G54 | Not Qualified | INDUSTRIAL | 0.21 mA | 8MX16 | 3-STATE | 16 | 0.002 A | 134217728 bit | COMMON | SYNCHRONOUS DRAM | 4096 | 1,2,4,8,FP | 1,2,4,8 | |||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No K4S281632C-NC1H | Samsung Semiconductor | Datasheet | - | - | Min: 1 Mult: 1 | YES | 54 | 6 ns | 100 MHz | SAMSUNG SEMICONDUCTOR INC | 3 | 8388608 words | 8000000 | 70 °C | PLASTIC/EPOXY | TSSOP | TSSOP54,.46,16 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | Obsolete | No | 3.3 V | e0 | No | EAR99 | TIN LEAD | 8542.32.00.02 | DUAL | GULL WING | 0.4 mm | unknown | R-PDSO-G54 | Not Qualified | COMMERCIAL | 0.21 mA | 8MX16 | 3-STATE | 16 | 0.001 A | 134217728 bit | COMMON | SYNCHRONOUS DRAM | 4096 | 1,2,4,8,FP | 1,2,4,8 | |||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No EDS1232AASE-75L-E | Elpida Memory Inc | Datasheet | - | - | Min: 1 Mult: 1 | YES | 90 | 5.4 ns | 133 MHz | ELPIDA MEMORY INC | 4194304 words | 4000000 | 70 °C | PLASTIC/EPOXY | TFBGA | TFBGA, BGA90,9X15,32 | BGA90,9X15,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | BGA | Yes | 3.3 V | e1 | EAR99 | TIN SILVER COPPER | AUTO/SELF REFRESH | 8542.32.00.02 | BOTTOM | BALL | 1 | 0.8 mm | unknown | 90 | R-PBGA-B90 | Not Qualified | 3.6 V | COMMERCIAL | 3 V | 1 | SYNCHRONOUS | 0.21 mA | 4MX32 | 3-STATE | 1.14 mm | 32 | 0.001 A | 134217728 bit | COMMON | SYNCHRONOUS DRAM | 4096 | 1,2,4,8,FP | 1,2,4,8 | FOUR BANK PAGE BURST | YES | 13 mm | 8 mm | |||||||||||||||||||||||||||||||||
![]() | Mfr Part No IS61NW6432-7TQ | Integrated Circuit Solution Inc | Datasheet | - | - | Min: 1 Mult: 1 | YES | 100 | 7 ns | INTEGRATED CIRCUIT SOLUTION INC | 65536 words | 64000 | 70 °C | PLASTIC/EPOXY | QFP | QFP, QFP100,.63X.87 | QFP100,.63X.87 | RECTANGULAR | FLATPACK | Transferred | No | 3.3 V | e0 | 3A991.B.2.A | Tin/Lead (Sn/Pb) | 8542.32.00.41 | QUAD | GULL WING | 0.635 mm | unknown | R-PQFP-G100 | Not Qualified | COMMERCIAL | SYNCHRONOUS | 0.21 mA | 64KX32 | 3-STATE | 32 | 0.06 A | 2097152 bit | PARALLEL | COMMON | ZBT SRAM | 3.14 V | |||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No IS61NW6432-7TQ | Integrated Silicon Solution Inc | Datasheet | - | - | Min: 1 Mult: 1 | YES | 100 | 7 ns | INTEGRATED SILICON SOLUTION INC | 65536 words | 64000 | 70 °C | PLASTIC/EPOXY | LQFP | TQFP-100 | QFP100,.63X.87 | RECTANGULAR | FLATPACK, LOW PROFILE | Obsolete | QFP | No | 3.3 V | e0 | 3A991.B.2.A | TIN LEAD | SELF-TIMED WRITE; BURST COUNTER; BYTE WRITE; LINEAR/INTERLEAVED BURST SEQUENCE | 8542.32.00.41 | QUAD | GULL WING | 1 | 0.65 mm | compliant | 100 | R-PQFP-G100 | Not Qualified | 3.63 V | COMMERCIAL | 3.135 V | SYNCHRONOUS | 0.21 mA | 64KX32 | 3-STATE | 1.6 mm | 32 | 0.06 A | 2097152 bit | PARALLEL | COMMON | ZBT SRAM | 3.14 V | 20 mm | 14 mm | ||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No M11B416256A-25JP | Elite Semiconductor Memory Technology Inc | Datasheet | - | - | Min: 1 Mult: 1 | YES | 40 | 12 ns | ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC | 262144 words | 256000 | 70 °C | PLASTIC/EPOXY | SOP | SOP, SOJ40,.44 | SOJ40,.44 | RECTANGULAR | SMALL OUTLINE | Contact Manufacturer | SOJ | Yes | 5 V | EAR99 | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | 8542.32.00.02 | DUAL | GULL WING | 1 | 1.27 mm | unknown | 40 | R-PDSO-G40 | Not Qualified | 5.5 V | COMMERCIAL | 4.5 V | 1 | ASYNCHRONOUS | 0.21 mA | 256KX16 | 3-STATE | 3.76 mm | 16 | 0.002 A | 4194304 bit | COMMON | EDO DRAM | 512 | FAST PAGE WITH EDO | NO | 26.04 mm | 10.16 mm | ||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No H5DU2562GFR-E3L | SK Hynix Inc | Datasheet | - | - | Min: 1 Mult: 1 | YES | 60 | 0.7 ns | 200 MHz | SK HYNIX INC | 16777216 words | 16000000 | 70 °C | PLASTIC/EPOXY | VBGA | VBGA, BGA60,9X12,40/32 | BGA60,9X12,40/32 | RECTANGULAR | GRID ARRAY, VERY THIN PROFILE | Obsolete | BGA | Yes | 2.5 V | e1 | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | AUTO/SELF REFRESH | 8542.32.00.24 | BOTTOM | BALL | 260 | 1 | 1 mm | unknown | 20 | 60 | R-PBGA-B60 | Not Qualified | 2.7 V | COMMERCIAL | 2.3 V | 1 | SYNCHRONOUS | 0.21 mA | 16MX16 | 3-STATE | 1 mm | 16 | 0.004 A | 268435456 bit | COMMON | DDR1 DRAM | 8192 | 2,4,8 | 2,4,8 | FOUR BANK PAGE BURST | YES | 12 mm | 8 mm | |||||||||||||||||||||||||||||||
![]() | Mfr Part No IS61VPS12836A-200B3I | Integrated Silicon Solution Inc | Datasheet | - | - | Min: 1 Mult: 1 | YES | 165 | 3.1 ns | 200 MHz | INTEGRATED SILICON SOLUTION INC | 131072 words | 128000 | 85 °C | -40 °C | PLASTIC/EPOXY | TBGA | TBGA, BGA165,11X15,40 | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, THIN PROFILE | Active | BGA | No | 2.5 V | e0 | No | 3A991.B.2.A | TIN LEAD | PIPELINED ARCHITECTURE | 8542.32.00.41 | BOTTOM | BALL | 1 | 1 mm | compliant | 165 | R-PBGA-B165 | Not Qualified | 2.75 V | INDUSTRIAL | 2.375 V | SYNCHRONOUS | 0.21 mA | 128KX36 | 3-STATE | 1.2 mm | 36 | 0.075 A | 4718592 bit | PARALLEL | COMMON | CACHE SRAM | 2.38 V | 15 mm | 13 mm | |||||||||||||||||||||||||||||||||||
![]() | Mfr Part No IS61LPS12832A-200TQI | Integrated Silicon Solution Inc | Datasheet | - | - | Min: 1 Mult: 1 | YES | 100 | 3.1 ns | 200 MHz | INTEGRATED SILICON SOLUTION INC | 3 | 131072 words | 128000 | 85 °C | -40 °C | PLASTIC/EPOXY | LQFP | TQFP-100 | QFP100,.63X.87 | RECTANGULAR | FLATPACK, LOW PROFILE | Obsolete | QFP | No | 3.3 V | e0 | No | 3A991.B.2.A | TIN LEAD | PIPELINED ARCHITECTURE | 8542.32.00.41 | QUAD | GULL WING | 1 | 0.65 mm | compliant | 100 | R-PQFP-G100 | Not Qualified | 3.465 V | INDUSTRIAL | 3.135 V | SYNCHRONOUS | 0.21 mA | 128KX32 | 3-STATE | 1.6 mm | 32 | 0.075 A | 4194304 bit | PARALLEL | COMMON | CACHE SRAM | 3.14 V | 20 mm | 14 mm | ||||||||||||||||||||||||||||||||||
![]() | Mfr Part No MT48LC4M16A2B4-75:G | Micron | Datasheet | - | - | Min: 1 Mult: 1 | Surface Mount | YES | 54 | 54 | 5.4 ns | 133 MHz | MICRON TECHNOLOGY INC | Micron Technology Inc | MT48LC4M16A2B4-75:G | 4194304 words | 4000000 | 70 °C | PLASTIC/EPOXY | VFBGA | VFBGA, BGA54,9X9,32 | BGA54,9X9,32 | SQUARE | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | Obsolete | BGA | 30 | 5.39 | Compliant | Yes | 3.3 V | e1 | Yes | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | 70 °C | 0 °C | AUTO/SELF REFRESH | 8542.32.00.02 | DRAMs | CMOS | BOTTOM | BALL | 260 | 1 | 0.8 mm | compliant | 54 | S-PBGA-B54 | Not Qualified | 3.3 V | 3.6 V | 3.3 V | COMMERCIAL | 3 V | 3.6 V | 3 V | 1 | 140 mA | SYNCHRONOUS | 0.21 mA | 16 b | 4MX16 | 3-STATE | 1 mm | 16 | 14 b | 64 Mb | 0.002 A | 67108864 bit | 133 MHz | COMMON | SYNCHRONOUS DRAM | 4096 | 1,2,4,8,FP | 1,2,4,8 | FOUR BANK PAGE BURST | YES | 8 mm | 8 mm | No | Lead Free | |||||||||
![]() | Mfr Part No H57V1262GTR-50C | SK Hynix Inc | Datasheet | - | - | Min: 1 Mult: 1 | YES | 54 | 4.5 ns | 200 MHz | SK HYNIX INC | 8388608 words | 8000000 | 70 °C | PLASTIC/EPOXY | TSOP2 | TSOP2, TSOP54,.46,32 | TSOP54,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | TSOP2 | Yes | 3.3 V | e6 | EAR99 | Tin/Bismuth (Sn/Bi) | AUTO/SELF REFRESH | 8542.32.00.02 | DUAL | GULL WING | 260 | 1 | 0.8 mm | unknown | 20 | 54 | R-PDSO-G54 | Not Qualified | 3.6 V | COMMERCIAL | 3 V | 1 | SYNCHRONOUS | 0.21 mA | 8MX16 | 3-STATE | 1.194 mm | 16 | 0.002 A | 134217728 bit | COMMON | SYNCHRONOUS DRAM | 4096 | 1,2,4,8,FP | 1,2,4,8 | FOUR BANK PAGE BURST | YES | 22.238 mm | 10.16 mm | |||||||||||||||||||||||||||||||
![]() | Mfr Part No M12L128168A-6T | Elite Semiconductor Memory Technology Inc | Datasheet | - | - | Min: 1 Mult: 1 | YES | 54 | 5.4 ns | 166 MHz | ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC | 8388608 words | 8000000 | 70 °C | PLASTIC/EPOXY | TSOP | TSOP, TSOP54,.46,32 | TSOP54,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | No | 3.3 V | e0 | EAR99 | Tin/Lead (Sn/Pb) | 8542.32.00.02 | DUAL | GULL WING | 0.8 mm | unknown | R-PDSO-G54 | Not Qualified | COMMERCIAL | 0.21 mA | 8MX16 | 3-STATE | 16 | 0.002 A | 134217728 bit | COMMON | SYNCHRONOUS DRAM | 4096 | 1,2,4,8,FP | 1,2,4,8 | ||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No M11B416256A-25J | Elite Semiconductor Memory Technology Inc | Datasheet | - | - | Min: 1 Mult: 1 | YES | 40 | 25 ns | ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC | 262144 words | 256000 | 70 °C | PLASTIC/EPOXY | SOJ | SOJ, SOJ40,.44 | SOJ40,.44 | RECTANGULAR | SMALL OUTLINE | Contact Manufacturer | 5 V | EAR99 | 8542.32.00.02 | DUAL | J BEND | 1.27 mm | unknown | R-PDSO-J40 | Not Qualified | COMMERCIAL | 0.21 mA | 256KX16 | 3-STATE | 16 | 0.002 A | 4194304 bit | COMMON | EDO DRAM | 512 | NO | |||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No NT5CC256M8FN-DII | Nanya Technology Corporation | Datasheet | - | - | Min: 1 Mult: 1 | YES | 78 | 0.225 ns | 800 MHz | NANYA TECHNOLOGY CORP | 268435456 words | 256000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TFBGA | TFBGA, BGA78,9X13,32 | BGA78,9X13,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | Yes | 1.35 V | EAR99 | AUTO/SELF REFRESH | 8542.32.00.36 | BOTTOM | BALL | NOT SPECIFIED | 1 | 0.8 mm | compliant | NOT SPECIFIED | R-PBGA-B78 | Not Qualified | 1.45 V | INDUSTRIAL | 1.283 V | 1 | SYNCHRONOUS | 0.21 mA | 256MX8 | 3-STATE | 1.2 mm | 8 | 0.003 A | 2147483648 bit | COMMON | DDR3L DRAM | 8192 | 4,8 | 4,8 | MULTI BANK PAGE BURST | YES | 10.5 mm | 8 mm | ||||||||||||||||||||||||||||||||||
![]() | Mfr Part No H5DU2582GTR-E3L | SK Hynix Inc | Datasheet | - | - | Min: 1 Mult: 1 | YES | 66 | 0.7 ns | 200 MHz | SK HYNIX INC | 33554432 words | 32000000 | 70 °C | PLASTIC/EPOXY | TSSOP | TSSOP, TSSOP66,.46 | TSSOP66,.46 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | Obsolete | TSOP2 | Yes | 2.5 V | e6 | EAR99 | Tin/Bismuth (Sn/Bi) | AUTO/SELF REFRESH | 8542.32.00.24 | DUAL | GULL WING | 260 | 1 | 0.65 mm | unknown | 20 | 66 | R-PDSO-G66 | Not Qualified | 2.7 V | COMMERCIAL | 2.3 V | 1 | SYNCHRONOUS | 0.21 mA | 32MX8 | 3-STATE | 1.194 mm | 8 | 0.004 A | 268435456 bit | COMMON | DDR1 DRAM | 8192 | 2,4,8 | 2,4,8 | FOUR BANK PAGE BURST | YES | 22.225 mm | 10.155 mm | |||||||||||||||||||||||||||||||
![]() | Mfr Part No UPD4811650GF-A12-9BT | Renesas Electronics Corporation | Datasheet | - | - | Min: 1 Mult: 1 | YES | 100 | 11 ns | 83 MHz | RENESAS ELECTRONICS CORP | 524288 words | 512000 | 70 °C | PLASTIC/EPOXY | QFP | TQFP100,.7X.9,25 | RECTANGULAR | FLATPACK | Obsolete | No | 3.3 V | e0 | EAR99 | Tin/Lead (Sn/Pb) | 8542.32.00.02 | QUAD | GULL WING | 0.635 mm | unknown | R-PQFP-G100 | Not Qualified | COMMERCIAL | 0.21 mA | 512KX32 | 3-STATE | 32 | 0.003 A | 16777216 bit | COMMON | SYNCHRONOUS DRAM | 2048 | 1,2,4,8,FP | 1,2,4,8 | |||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No K4S560832A-TC75 | Samsung Semiconductor | Datasheet | - | - | Min: 1 Mult: 1 | YES | 54 | 5.4 ns | 133 MHz | SAMSUNG SEMICONDUCTOR INC | 33554432 words | 32000000 | 70 °C | PLASTIC/EPOXY | TSOP2 | TSOP2, TSOP54,.46,32 | TSOP54,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | TSOP2 | No | 3.3 V | e0 | No | EAR99 | TIN LEAD | AUTO/SELF REFRESH | 8542.32.00.24 | DUAL | GULL WING | 1 | 0.8 mm | unknown | 54 | R-PDSO-G54 | Not Qualified | 3.6 V | COMMERCIAL | 3 V | 1 | SYNCHRONOUS | 0.21 mA | 32MX8 | 3-STATE | 1.2 mm | 8 | 0.002 A | 268435456 bit | COMMON | SYNCHRONOUS DRAM | 8192 | 1,2,4,8,FP | 1,2,4,8 | FOUR BANK PAGE BURST | YES | 22.22 mm | 10.16 mm |
MT48LC4M16A2TG-75IT:G
Micron
Package:Memory
Price: please inquire
W9425G6JH-4
Winbond
Package:Memory
Price: please inquire
IDT7005L35J
Renesas
Package:Memory
Price: please inquire
HY57V281620FTP-5I
SK Hynix Inc
Package:Memory
Price: please inquire
K4S281632C-NC1H
Samsung Semiconductor
Package:Memory
Price: please inquire
EDS1232AASE-75L-E
Elpida Memory Inc
Package:Memory
Price: please inquire
IS61NW6432-7TQ
Integrated Circuit Solution Inc
Package:Memory
Price: please inquire
IS61NW6432-7TQ
Integrated Silicon Solution Inc
Package:Memory
Price: please inquire
M11B416256A-25JP
Elite Semiconductor Memory Technology Inc
Package:Memory
Price: please inquire
H5DU2562GFR-E3L
SK Hynix Inc
Package:Memory
Price: please inquire
IS61VPS12836A-200B3I
Integrated Silicon Solution Inc
Package:Memory
Price: please inquire
IS61LPS12832A-200TQI
Integrated Silicon Solution Inc
Package:Memory
Price: please inquire
MT48LC4M16A2B4-75:G
Micron
Package:Memory
Price: please inquire
H57V1262GTR-50C
SK Hynix Inc
Package:Memory
Price: please inquire
M12L128168A-6T
Elite Semiconductor Memory Technology Inc
Package:Memory
Price: please inquire
M11B416256A-25J
Elite Semiconductor Memory Technology Inc
Package:Memory
Price: please inquire
NT5CC256M8FN-DII
Nanya Technology Corporation
Package:Memory
Price: please inquire
H5DU2582GTR-E3L
SK Hynix Inc
Package:Memory
Price: please inquire
UPD4811650GF-A12-9BT
Renesas Electronics Corporation
Package:Memory
Price: please inquire
K4S560832A-TC75
Samsung Semiconductor
Package:Memory
Price: please inquire
