The category is 'Memory'
Memory (30)
- All Manufacturers
- Access Time-Max
- ECCN Code
- HTS Code
- I/O Type
- Ihs Manufacturer
- JESD-30 Code
- Memory Density
- Memory IC Type
- Memory Width
- Number of Terminals
- Number of Words Code
- Supply Current-Max
- Supply Current-Max:
0.21 mA
Image | Part Number | Manufacturer | Datasheet | Availability | Pricing(USD) | Quantity | RoHS | Mount | Surface Mount | Number of Pins | Number of Terminals | Access Time-Max | Clock Frequency-Max (fCLK) | Ihs Manufacturer | Manufacturer | Manufacturer Part Number | Moisture Sensitivity Levels | Number of Words | Number of Words Code | Operating Temperature-Max | Operating Temperature-Min | Package Body Material | Package Code | Package Description | Package Equivalence Code | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Reflow Temperature-Max (s) | Risk Rank | RoHS | Rohs Code | Supply Voltage-Nom (Vsup) | JESD-609 Code | Pbfree Code | ECCN Code | Terminal Finish | Max Operating Temperature | Min Operating Temperature | Additional Feature | HTS Code | Subcategory | Technology | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Terminal Pitch | Reach Compliance Code | Time@Peak Reflow Temperature-Max (s) | Pin Count | JESD-30 Code | Qualification Status | Operating Supply Voltage | Supply Voltage-Max (Vsup) | Power Supplies | Temperature Grade | Supply Voltage-Min (Vsup) | Max Supply Voltage | Min Supply Voltage | Number of Ports | Nominal Supply Current | Operating Mode | Supply Current-Max | Data Bus Width | Organization | Output Characteristics | Seated Height-Max | Memory Width | Address Bus Width | Density | Standby Current-Max | Memory Density | Max Frequency | Parallel/Serial | I/O Type | Memory IC Type | Standby Voltage-Min | Refresh Cycles | Sequential Burst Length | Interleaved Burst Length | Access Mode | Self Refresh | Length | Width | Radiation Hardening | Lead Free |
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![]() | Mfr Part No M11B416256A-25J | Elite Semiconductor Memory Technology Inc | Datasheet | - | - | Min: 1 Mult: 1 | YES | 40 | 25 ns | ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC | 262144 words | 256000 | 70 °C | PLASTIC/EPOXY | SOJ | SOJ, SOJ40,.44 | SOJ40,.44 | RECTANGULAR | SMALL OUTLINE | Contact Manufacturer | 5 V | EAR99 | 8542.32.00.02 | DUAL | J BEND | 1.27 mm | unknown | R-PDSO-J40 | Not Qualified | COMMERCIAL | 0.21 mA | 256KX16 | 3-STATE | 16 | 0.002 A | 4194304 bit | COMMON | EDO DRAM | 512 | NO | ||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No H57V1262GTR-50C | SK Hynix Inc | Datasheet | - | - | Min: 1 Mult: 1 | YES | 54 | 4.5 ns | 200 MHz | SK HYNIX INC | 8388608 words | 8000000 | 70 °C | PLASTIC/EPOXY | TSOP2 | TSOP2, TSOP54,.46,32 | TSOP54,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | TSOP2 | Yes | 3.3 V | e6 | EAR99 | Tin/Bismuth (Sn/Bi) | AUTO/SELF REFRESH | 8542.32.00.02 | DUAL | GULL WING | 260 | 1 | 0.8 mm | unknown | 20 | 54 | R-PDSO-G54 | Not Qualified | 3.6 V | COMMERCIAL | 3 V | 1 | SYNCHRONOUS | 0.21 mA | 8MX16 | 3-STATE | 1.194 mm | 16 | 0.002 A | 134217728 bit | COMMON | SYNCHRONOUS DRAM | 4096 | 1,2,4,8,FP | 1,2,4,8 | FOUR BANK PAGE BURST | YES | 22.238 mm | 10.16 mm | ||||||||||||||||||||||||||||
![]() | Mfr Part No NT5CC256M8FN-DII | Nanya Technology Corporation | Datasheet | - | - | Min: 1 Mult: 1 | YES | 78 | 0.225 ns | 800 MHz | NANYA TECHNOLOGY CORP | 268435456 words | 256000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TFBGA | TFBGA, BGA78,9X13,32 | BGA78,9X13,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | Yes | 1.35 V | EAR99 | AUTO/SELF REFRESH | 8542.32.00.36 | BOTTOM | BALL | NOT SPECIFIED | 1 | 0.8 mm | compliant | NOT SPECIFIED | R-PBGA-B78 | Not Qualified | 1.45 V | INDUSTRIAL | 1.283 V | 1 | SYNCHRONOUS | 0.21 mA | 256MX8 | 3-STATE | 1.2 mm | 8 | 0.003 A | 2147483648 bit | COMMON | DDR3L DRAM | 8192 | 4,8 | 4,8 | MULTI BANK PAGE BURST | YES | 10.5 mm | 8 mm | |||||||||||||||||||||||||||||||
![]() | Mfr Part No MT48LC16M4A2TG-75:G | Micron | Datasheet | - | - | Min: 1 Mult: 1 | YES | 54 | 5.4 ns | 133 MHz | MICRON TECHNOLOGY INC | Micron Technology Inc | MT48LC16M4A2TG-75:G | 16777216 words | 16000000 | 70 °C | PLASTIC/EPOXY | TSOP2 | 0.400 INCH, PLASTIC, TSOP2-54 | TSOP54,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | TSOP2 | 30 | 5.05 | No | 3.3 V | e0 | No | EAR99 | Tin/Lead (Sn/Pb) | AUTO/SELF REFRESH | 8542.32.00.02 | DRAMs | CMOS | DUAL | GULL WING | 235 | 1 | 0.8 mm | unknown | 54 | R-PDSO-G54 | Not Qualified | 3.6 V | 3.3 V | COMMERCIAL | 3 V | 1 | SYNCHRONOUS | 0.21 mA | 16MX4 | 3-STATE | 1.2 mm | 4 | 0.002 A | 67108864 bit | COMMON | SYNCHRONOUS DRAM | 4096 | 1,2,4,8,FP | 1,2,4,8 | FOUR BANK PAGE BURST | YES | 22.22 mm | 10.16 mm | |||||||||||||||||||||
![]() | Mfr Part No MT48LC4M16A2TG-75:G | Micron | Datasheet | - | - | Min: 1 Mult: 1 | YES | 54 | 5.4 ns | 133 MHz | MICRON TECHNOLOGY INC | Micron Technology Inc | MT48LC4M16A2TG-75:G | 4194304 words | 4000000 | 70 °C | PLASTIC/EPOXY | TSOP2 | 0.400 INCH, PLASTIC, TSOP2-54 | TSOP54,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | TSOP2 | 30 | 8.25 | No | 3.3 V | e0 | No | EAR99 | Tin/Lead (Sn/Pb) | AUTO/SELF REFRESH | 8542.32.00.02 | DRAMs | CMOS | DUAL | GULL WING | 235 | 1 | 0.8 mm | unknown | 54 | R-PDSO-G54 | Not Qualified | 3.6 V | 3.3 V | COMMERCIAL | 3 V | 1 | SYNCHRONOUS | 0.21 mA | 4MX16 | 3-STATE | 1.2 mm | 16 | 0.002 A | 67108864 bit | COMMON | SYNCHRONOUS DRAM | 4096 | 1,2,4,8,FP | 1,2,4,8 | FOUR BANK PAGE BURST | YES | 22.22 mm | 10.16 mm | |||||||||||||||||||||
![]() | Mfr Part No MT48LC8M8A2TG-75:G | Micron | Datasheet | - | - | Min: 1 Mult: 1 | YES | 54 | 5.4 ns | 133 MHz | MICRON TECHNOLOGY INC | Micron Technology Inc | MT48LC8M8A2TG-75:G | 8388608 words | 8000000 | 70 °C | PLASTIC/EPOXY | TSOP2 | 0.400 INCH, PLASTIC, TSOP2-54 | TSOP54,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | TSOP2 | 30 | 7.7 | No | 3.3 V | e0 | No | EAR99 | Tin/Lead (Sn/Pb) | AUTO/SELF REFRESH | 8542.32.00.02 | DRAMs | CMOS | DUAL | GULL WING | 235 | 1 | 0.8 mm | unknown | 54 | R-PDSO-G54 | Not Qualified | 3.6 V | 3.3 V | COMMERCIAL | 3 V | 1 | SYNCHRONOUS | 0.21 mA | 8MX8 | 3-STATE | 1.2 mm | 8 | 0.002 A | 67108864 bit | COMMON | SYNCHRONOUS DRAM | 4096 | 1,2,4,8,FP | 1,2,4,8 | FOUR BANK PAGE BURST | YES | 22.22 mm | 10.16 mm | |||||||||||||||||||||
![]() | Mfr Part No GS832032GT-133I | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | YES | 100 | 8.5 ns | 133 MHz | GSI TECHNOLOGY | GSI Technology | GS832032GT-133I | 3 | 1048576 words | 1000000 | 85 °C | -40 °C | PLASTIC/EPOXY | LQFP | LQFP, QFP100,.63X.87 | QFP100,.63X.87 | RECTANGULAR | FLATPACK, LOW PROFILE | Obsolete | QFP | NOT SPECIFIED | 5.7 | Yes | 2.5 V | e3 | Yes | 3A991.B.2.B | PURE MATTE TIN | FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY | 8542.32.00.41 | SRAMs | CMOS | QUAD | GULL WING | 260 | 1 | 0.65 mm | compliant | 100 | R-PQFP-G100 | Not Qualified | 2.7 V | 2.5/3.3 V | INDUSTRIAL | 2.3 V | SYNCHRONOUS | 0.21 mA | 1MX32 | 3-STATE | 1.6 mm | 32 | 0.08 A | 33554432 bit | PARALLEL | COMMON | CACHE SRAM | 3.14 V | 20 mm | 14 mm | |||||||||||||||||||||||
![]() | Mfr Part No GS8321Z36GE-133I | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | YES | 165 | 8.5 ns | 133 MHz | GSI TECHNOLOGY | GSI Technology | GS8321Z36GE-133I | 3 | 1048576 words | 1000000 | 85 °C | -40 °C | PLASTIC/EPOXY | LBGA | 15 X 17 MM, 1 MM PITCH, FPBGA-165 | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | Obsolete | BGA | NOT SPECIFIED | 8.41 | Yes | 2.5 V | e1 | Yes | 3A991.B.2.B | Tin/Silver/Copper (Sn/Ag/Cu) | FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY | 8542.32.00.41 | SRAMs | CMOS | BOTTOM | BALL | 260 | 1 | 1 mm | compliant | 165 | R-PBGA-B165 | Not Qualified | 2.7 V | 2.5/3.3 V | INDUSTRIAL | 2.3 V | SYNCHRONOUS | 0.21 mA | 1MX36 | 3-STATE | 1.5 mm | 36 | 0.08 A | 37748736 bit | PARALLEL | COMMON | ZBT SRAM | 2.3 V | 17 mm | 15 mm | |||||||||||||||||||||||
![]() | Mfr Part No MT48LC4M16A2B4-75IT:G | Micron | Datasheet | - | - | Min: 1 Mult: 1 | Surface Mount | YES | 54 | 54 | 5.4 ns | 133 MHz | MICRON TECHNOLOGY INC | Micron Technology Inc | MT48LC4M16A2B4-75IT:G | 4194304 words | 4000000 | 85 °C | -40 °C | PLASTIC/EPOXY | VFBGA | VFBGA, BGA54,9X9,32 | BGA54,9X9,32 | SQUARE | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | Obsolete | BGA | 30 | 5.26 | Compliant | Yes | 3.3 V | e1 | Yes | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | 85 °C | -40 °C | AUTO/SELF REFRESH | 8542.32.00.02 | DRAMs | CMOS | BOTTOM | BALL | 260 | 1 | 0.8 mm | compliant | 54 | S-PBGA-B54 | Not Qualified | 3.3 V | 3.6 V | 3.3 V | INDUSTRIAL | 3 V | 3.6 V | 3 V | 1 | 140 mA | SYNCHRONOUS | 0.21 mA | 16 b | 4MX16 | 3-STATE | 1 mm | 16 | 14 b | 64 Mb | 0.002 A | 67108864 bit | 133 MHz | COMMON | SYNCHRONOUS DRAM | 4096 | 1,2,4,8,FP | 1,2,4,8 | FOUR BANK PAGE BURST | YES | 8 mm | 8 mm | No | Lead Free | |||||
![]() | Mfr Part No 70V27L25PFG | Integrated Device Technology | Datasheet | - | - | Min: 1 Mult: 1 | YES | 100 | 25 ns | INTEGRATED DEVICE TECHNOLOGY INC | Integrated Device Technology Inc | 70V27L25PFG | 3 | 32768 words | 32000 | 70 °C | PLASTIC/EPOXY | QFP | QFP, QFP100,.63SQ,20 | QFP100,.63SQ,20 | SQUARE | FLATPACK | Active | QFP | 30 | 5.19 | Yes | 3.3 V | e3 | Yes | EAR99 | Matte Tin (Sn) - annealed | 8542.32.00.41 | SRAMs | CMOS | QUAD | GULL WING | 260 | 1 | 0.5 mm | compliant | 100 | S-PQFP-G100 | Not Qualified | 3.6 V | 3.3 V | COMMERCIAL | 3 V | 2 | ASYNCHRONOUS | 0.21 mA | 32KX16 | 3-STATE | 16 | 0.003 A | 524288 bit | PARALLEL | COMMON | DUAL-PORT SRAM | 3 V |
M11B416256A-25J
Elite Semiconductor Memory Technology Inc
Package:Memory
Price: please inquire
H57V1262GTR-50C
SK Hynix Inc
Package:Memory
Price: please inquire
NT5CC256M8FN-DII
Nanya Technology Corporation
Package:Memory
Price: please inquire
MT48LC16M4A2TG-75:G
Micron
Package:Memory
Price: please inquire
MT48LC4M16A2TG-75:G
Micron
Package:Memory
Price: please inquire
MT48LC8M8A2TG-75:G
Micron
Package:Memory
Price: please inquire
GS832032GT-133I
GSI Technology
Package:Memory
Price: please inquire
GS8321Z36GE-133I
GSI Technology
Package:Memory
Price: please inquire
MT48LC4M16A2B4-75IT:G
Micron
Package:Memory
Price: please inquire
70V27L25PFG
Integrated Device Technology
Package:Memory
Price: please inquire
