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The category is 'Memory'

Memory (30)

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Access Time-Max
ECCN Code
HTS Code
I/O Type
Ihs Manufacturer
JESD-30 Code
Memory Density
Memory IC Type
Memory Width
Number of Terminals
Number of Words Code
Supply Current-Max

Supply Current-Max:
0.21 mA

Image	Part Number	Manufacturer	Datasheet	Availability	Pricing(USD)	Quantity	RoHS	Mount	Surface Mount	Number of Pins	Number of Terminals	Access Time-Max	Clock Frequency-Max (fCLK)	Ihs Manufacturer	Manufacturer	Manufacturer Part Number	Moisture Sensitivity Levels	Number of Words	Number of Words Code	Operating Temperature-Max	Operating Temperature-Min	Package Body Material	Package Code	Package Description	Package Equivalence Code	Package Shape	Package Style	Part Life Cycle Code	Part Package Code	Reflow Temperature-Max (s)	Risk Rank	RoHS	Rohs Code	Supply Voltage-Nom (Vsup)	JESD-609 Code	Pbfree Code	ECCN Code	Terminal Finish	Max Operating Temperature	Min Operating Temperature	Additional Feature	HTS Code	Subcategory	Technology	Terminal Position	Terminal Form	Peak Reflow Temperature (Cel)	Number of Functions	Terminal Pitch	Reach Compliance Code	Time@Peak Reflow Temperature-Max (s)	Pin Count	JESD-30 Code	Qualification Status	Operating Supply Voltage	Supply Voltage-Max (Vsup)	Power Supplies	Temperature Grade	Supply Voltage-Min (Vsup)	Max Supply Voltage	Min Supply Voltage	Number of Ports	Nominal Supply Current	Operating Mode	Supply Current-Max	Data Bus Width	Organization	Output Characteristics	Seated Height-Max	Memory Width	Address Bus Width	Density	Standby Current-Max	Memory Density	Max Frequency	Parallel/Serial	I/O Type	Memory IC Type	Standby Voltage-Min	Refresh Cycles	Sequential Burst Length	Interleaved Burst Length	Access Mode	Self Refresh	Length	Width	Radiation Hardening	Lead Free
	Mfr Part No IS61VPS25618A-200TQI	Integrated Silicon Solution Inc	Datasheet	-	-	Min: 1 Mult: 1			YES		100	3.1 ns	200 MHz	INTEGRATED SILICON SOLUTION INC			3	262144 words	256000	85 °C	-40 °C	PLASTIC/EPOXY	LQFP	TQFP-100	QFP100,.63X.87	RECTANGULAR	FLATPACK, LOW PROFILE	Obsolete	QFP				No	2.5 V	e0	No	3A991.B.2.A	TIN LEAD			PIPELINED ARCHITECTURE	8542.32.00.41			QUAD	GULL WING		1	0.65 mm	compliant		100	R-PQFP-G100	Not Qualified		2.75 V		INDUSTRIAL	2.375 V					SYNCHRONOUS	0.21 mA		256KX18	3-STATE	1.6 mm	18			0.000075 A	4718592 bit		PARALLEL	COMMON	CACHE SRAM	2.38 V						20 mm	14 mm
	Mfr Part No EDS1232AATA-75TI	Elpida Memory Inc	Datasheet	-	-	Min: 1 Mult: 1			YES		86	5.4 ns	133 MHz	ELPIDA MEMORY INC				4194304 words	4000000	85 °C	-40 °C	PLASTIC/EPOXY	TSSOP	TSSOP, TSSOP86,.46,20	TSSOP86,.46,20	RECTANGULAR	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	Obsolete	TSOP2				No	3.3 V	e0		EAR99	TIN LEAD			AUTO/SELF REFRESH	8542.32.00.02			DUAL	GULL WING		1	0.5 mm	unknown		86	R-PDSO-G86	Not Qualified		3.6 V		INDUSTRIAL	3 V			1		SYNCHRONOUS	0.21 mA		4MX32	3-STATE	1.2 mm	32			0.001 A	134217728 bit			COMMON	SYNCHRONOUS DRAM		4096	1,2,4,8,FP	1,2,4,8	FOUR BANK PAGE BURST	YES	22.22 mm	10.16 mm
	Mfr Part No H5DU2562GFR-E3I	SK Hynix Inc	Datasheet	-	-	Min: 1 Mult: 1			YES		60	0.7 ns	200 MHz	SK HYNIX INC				16777216 words	16000000	85 °C	-40 °C	PLASTIC/EPOXY	VBGA	VBGA, BGA60,9X12,40/32	BGA60,9X12,40/32	RECTANGULAR	GRID ARRAY, VERY THIN PROFILE	Obsolete	BGA				Yes	2.5 V	e1		EAR99	Tin/Silver/Copper (Sn/Ag/Cu)			AUTO/SELF REFRESH	8542.32.00.24			BOTTOM	BALL	260	1	1 mm	unknown	20	60	R-PBGA-B60	Not Qualified		2.7 V		INDUSTRIAL	2.3 V			1		SYNCHRONOUS	0.21 mA		16MX16	3-STATE	1 mm	16			0.004 A	268435456 bit			COMMON	DDR1 DRAM		8192	2,4,8	2,4,8	FOUR BANK PAGE BURST	YES	12 mm	8 mm
	Mfr Part No MT48LC16M4A2TG-75:G	Micron	Datasheet	-	-	Min: 1 Mult: 1			YES		54	5.4 ns	133 MHz	MICRON TECHNOLOGY INC	Micron Technology Inc	MT48LC16M4A2TG-75:G		16777216 words	16000000	70 °C		PLASTIC/EPOXY	TSOP2	0.400 INCH, PLASTIC, TSOP2-54	TSOP54,.46,32	RECTANGULAR	SMALL OUTLINE, THIN PROFILE	Obsolete	TSOP2	30	5.05		No	3.3 V	e0	No	EAR99	Tin/Lead (Sn/Pb)			AUTO/SELF REFRESH	8542.32.00.02	DRAMs	CMOS	DUAL	GULL WING	235	1	0.8 mm	unknown		54	R-PDSO-G54	Not Qualified		3.6 V	3.3 V	COMMERCIAL	3 V			1		SYNCHRONOUS	0.21 mA		16MX4	3-STATE	1.2 mm	4			0.002 A	67108864 bit			COMMON	SYNCHRONOUS DRAM		4096	1,2,4,8,FP	1,2,4,8	FOUR BANK PAGE BURST	YES	22.22 mm	10.16 mm
	Mfr Part No MT48LC4M16A2TG-75:G	Micron	Datasheet	-	-	Min: 1 Mult: 1			YES		54	5.4 ns	133 MHz	MICRON TECHNOLOGY INC	Micron Technology Inc	MT48LC4M16A2TG-75:G		4194304 words	4000000	70 °C		PLASTIC/EPOXY	TSOP2	0.400 INCH, PLASTIC, TSOP2-54	TSOP54,.46,32	RECTANGULAR	SMALL OUTLINE, THIN PROFILE	Obsolete	TSOP2	30	8.25		No	3.3 V	e0	No	EAR99	Tin/Lead (Sn/Pb)			AUTO/SELF REFRESH	8542.32.00.02	DRAMs	CMOS	DUAL	GULL WING	235	1	0.8 mm	unknown		54	R-PDSO-G54	Not Qualified		3.6 V	3.3 V	COMMERCIAL	3 V			1		SYNCHRONOUS	0.21 mA		4MX16	3-STATE	1.2 mm	16			0.002 A	67108864 bit			COMMON	SYNCHRONOUS DRAM		4096	1,2,4,8,FP	1,2,4,8	FOUR BANK PAGE BURST	YES	22.22 mm	10.16 mm
	Mfr Part No MT48LC8M8A2TG-75:G	Micron	Datasheet	-	-	Min: 1 Mult: 1			YES		54	5.4 ns	133 MHz	MICRON TECHNOLOGY INC	Micron Technology Inc	MT48LC8M8A2TG-75:G		8388608 words	8000000	70 °C		PLASTIC/EPOXY	TSOP2	0.400 INCH, PLASTIC, TSOP2-54	TSOP54,.46,32	RECTANGULAR	SMALL OUTLINE, THIN PROFILE	Obsolete	TSOP2	30	7.7		No	3.3 V	e0	No	EAR99	Tin/Lead (Sn/Pb)			AUTO/SELF REFRESH	8542.32.00.02	DRAMs	CMOS	DUAL	GULL WING	235	1	0.8 mm	unknown		54	R-PDSO-G54	Not Qualified		3.6 V	3.3 V	COMMERCIAL	3 V			1		SYNCHRONOUS	0.21 mA		8MX8	3-STATE	1.2 mm	8			0.002 A	67108864 bit			COMMON	SYNCHRONOUS DRAM		4096	1,2,4,8,FP	1,2,4,8	FOUR BANK PAGE BURST	YES	22.22 mm	10.16 mm
	Mfr Part No GS832032GT-133I	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1			YES		100	8.5 ns	133 MHz	GSI TECHNOLOGY	GSI Technology	GS832032GT-133I	3	1048576 words	1000000	85 °C	-40 °C	PLASTIC/EPOXY	LQFP	LQFP, QFP100,.63X.87	QFP100,.63X.87	RECTANGULAR	FLATPACK, LOW PROFILE	Obsolete	QFP	NOT SPECIFIED	5.7		Yes	2.5 V	e3	Yes	3A991.B.2.B	PURE MATTE TIN			FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY	8542.32.00.41	SRAMs	CMOS	QUAD	GULL WING	260	1	0.65 mm	compliant		100	R-PQFP-G100	Not Qualified		2.7 V	2.5/3.3 V	INDUSTRIAL	2.3 V					SYNCHRONOUS	0.21 mA		1MX32	3-STATE	1.6 mm	32			0.08 A	33554432 bit		PARALLEL	COMMON	CACHE SRAM	3.14 V						20 mm	14 mm
	Mfr Part No GS8321Z36GE-133I	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1			YES		165	8.5 ns	133 MHz	GSI TECHNOLOGY	GSI Technology	GS8321Z36GE-133I	3	1048576 words	1000000	85 °C	-40 °C	PLASTIC/EPOXY	LBGA	15 X 17 MM, 1 MM PITCH, FPBGA-165	BGA165,11X15,40	RECTANGULAR	GRID ARRAY, LOW PROFILE	Obsolete	BGA	NOT SPECIFIED	8.41		Yes	2.5 V	e1	Yes	3A991.B.2.B	Tin/Silver/Copper (Sn/Ag/Cu)			FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY	8542.32.00.41	SRAMs	CMOS	BOTTOM	BALL	260	1	1 mm	compliant		165	R-PBGA-B165	Not Qualified		2.7 V	2.5/3.3 V	INDUSTRIAL	2.3 V					SYNCHRONOUS	0.21 mA		1MX36	3-STATE	1.5 mm	36			0.08 A	37748736 bit		PARALLEL	COMMON	ZBT SRAM	2.3 V						17 mm	15 mm
	Mfr Part No MT48LC4M16A2B4-75IT:G	Micron	Datasheet	-	-	Min: 1 Mult: 1		Surface Mount	YES	54	54	5.4 ns	133 MHz	MICRON TECHNOLOGY INC	Micron Technology Inc	MT48LC4M16A2B4-75IT:G		4194304 words	4000000	85 °C	-40 °C	PLASTIC/EPOXY	VFBGA	VFBGA, BGA54,9X9,32	BGA54,9X9,32	SQUARE	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	Obsolete	BGA	30	5.26	Compliant	Yes	3.3 V	e1	Yes	EAR99	Tin/Silver/Copper (Sn/Ag/Cu)	85 °C	-40 °C	AUTO/SELF REFRESH	8542.32.00.02	DRAMs	CMOS	BOTTOM	BALL	260	1	0.8 mm	compliant		54	S-PBGA-B54	Not Qualified	3.3 V	3.6 V	3.3 V	INDUSTRIAL	3 V	3.6 V	3 V	1	140 mA	SYNCHRONOUS	0.21 mA	16 b	4MX16	3-STATE	1 mm	16	14 b	64 Mb	0.002 A	67108864 bit	133 MHz		COMMON	SYNCHRONOUS DRAM		4096	1,2,4,8,FP	1,2,4,8	FOUR BANK PAGE BURST	YES	8 mm	8 mm	No	Lead Free
	Mfr Part No 70V27L25PFG	Integrated Device Technology	Datasheet	-	-	Min: 1 Mult: 1			YES		100	25 ns		INTEGRATED DEVICE TECHNOLOGY INC	Integrated Device Technology Inc	70V27L25PFG	3	32768 words	32000	70 °C		PLASTIC/EPOXY	QFP	QFP, QFP100,.63SQ,20	QFP100,.63SQ,20	SQUARE	FLATPACK	Active	QFP	30	5.19		Yes	3.3 V	e3	Yes	EAR99	Matte Tin (Sn) - annealed				8542.32.00.41	SRAMs	CMOS	QUAD	GULL WING	260	1	0.5 mm	compliant		100	S-PQFP-G100	Not Qualified		3.6 V	3.3 V	COMMERCIAL	3 V			2		ASYNCHRONOUS	0.21 mA		32KX16	3-STATE		16			0.003 A	524288 bit		PARALLEL	COMMON	DUAL-PORT SRAM	3 V

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