The category is 'Memory'
Memory (5)
- All Manufacturers
- Access Time-Max
- Clock Frequency-Max (fCLK)
- ECCN Code
- HTS Code
- I/O Type
- Ihs Manufacturer
- JESD-30 Code
- Memory Density
- Memory IC Type
- Memory Width
- Number of Terminals
- Supply Current-Max
- Supply Current-Max:
0.215 mA
Image | Part Number | Manufacturer | Datasheet | Availability | Pricing(USD) | Quantity | RoHS | Surface Mount | Number of Terminals | Access Time-Max | Clock Frequency-Max (fCLK) | Ihs Manufacturer | Manufacturer | Manufacturer Part Number | Moisture Sensitivity Levels | Number of Words | Number of Words Code | Operating Temperature-Max | Operating Temperature-Min | Package Body Material | Package Code | Package Description | Package Equivalence Code | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Reflow Temperature-Max (s) | Risk Rank | RoHS | Rohs Code | Supply Voltage-Nom (Vsup) | JESD-609 Code | Pbfree Code | ECCN Code | Terminal Finish | Additional Feature | HTS Code | Subcategory | Technology | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Terminal Pitch | Reach Compliance Code | Pin Count | JESD-30 Code | Qualification Status | Supply Voltage-Max (Vsup) | Power Supplies | Temperature Grade | Supply Voltage-Min (Vsup) | Number of Ports | Operating Mode | Supply Current-Max | Organization | Output Characteristics | Seated Height-Max | Memory Width | Standby Current-Max | Memory Density | Parallel/Serial | I/O Type | Memory IC Type | Standby Voltage-Min | Refresh Cycles | Sequential Burst Length | Interleaved Burst Length | Access Mode | Self Refresh | Length | Width |
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![]() | Mfr Part No GS816032BGT-150I | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | YES | 100 | 7.5 ns | 150 MHz | GSI TECHNOLOGY | GSI Technology | GS816032BGT-150I | 3 | 524288 words | 512000 | 85 °C | -40 °C | PLASTIC/EPOXY | LQFP | LQFP, QFP100,.63X.87 | QFP100,.63X.87 | RECTANGULAR | FLATPACK, LOW PROFILE | Obsolete | QFP | NOT SPECIFIED | 5.69 | Yes | 2.5 V | e3 | Yes | 3A991.B.2.B | PURE MATTE TIN | FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY | 8542.32.00.41 | SRAMs | CMOS | QUAD | GULL WING | 260 | 1 | 0.65 mm | compliant | 100 | R-PQFP-G100 | Not Qualified | 2.7 V | 2.5/3.3 V | INDUSTRIAL | 2.3 V | SYNCHRONOUS | 0.215 mA | 512KX32 | 3-STATE | 1.6 mm | 32 | 16777216 bit | PARALLEL | COMMON | CACHE SRAM | 2.3 V | 20 mm | 14 mm | |||||||||
![]() | Mfr Part No K4T51043QE-ZCF7 | Samsung Semiconductor | Datasheet | - | - | Min: 1 Mult: 1 | YES | 60 | 0.4 ns | 400 MHz | SAMSUNG SEMICONDUCTOR INC | 3 | 134217728 words | 128000000 | 95 °C | PLASTIC/EPOXY | FBGA | FBGA, BGA60,9X11,32 | BGA60,9X11,32 | RECTANGULAR | GRID ARRAY, FINE PITCH | Obsolete | Yes | 1.8 V | Yes | EAR99 | 8542.32.00.28 | BOTTOM | BALL | 260 | 0.8 mm | compliant | R-PBGA-B60 | Not Qualified | OTHER | 0.215 mA | 128MX4 | 3-STATE | 4 | 0.008 A | 536870912 bit | COMMON | DDR2 DRAM | 8192 | 4,8 | 4,8 | |||||||||||||||||||||||||||
![]() | Mfr Part No HYB25D128800CE-6 | Infineon | Datasheet | - | - | Min: 1 Mult: 1 | YES | 66 | 0.7 ns | 166 MHz | QIMONDA AG | Qimonda AG | HYB25D128800CE-6 | 1 | 16777216 words | 16000000 | 70 °C | PLASTIC/EPOXY | TSOP2 | TSOP2, TSSOP66,.46 | TSSOP66,.46 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | TSOP2 | 40 | 5.17 | Yes | 2.5 V | e3 | EAR99 | Matte Tin (Sn) | AUTO/SELF REFRESH | 8542.32.00.02 | DRAMs | CMOS | DUAL | GULL WING | 260 | 1 | 0.65 mm | unknown | 66 | R-PDSO-G66 | Not Qualified | 2.7 V | 2.5 V | COMMERCIAL | 2.3 V | 1 | SYNCHRONOUS | 0.215 mA | 16MX8 | 3-STATE | 1.2 mm | 8 | 0.0045 A | 134217728 bit | COMMON | DDR DRAM | 4096 | 2,4,8 | 2,4,8 | FOUR BANK PAGE BURST | YES | 22.22 mm | 10.16 mm | ||||||
![]() | Mfr Part No GS816036BGT-150I | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | YES | 100 | 7.5 ns | 150 MHz | GSI TECHNOLOGY | GSI Technology | GS816036BGT-150I | 3 | 524288 words | 512000 | 85 °C | -40 °C | PLASTIC/EPOXY | LQFP | LQFP, QFP100,.63X.87 | QFP100,.63X.87 | RECTANGULAR | FLATPACK, LOW PROFILE | Obsolete | QFP | NOT SPECIFIED | 5.69 | Yes | 2.5 V | e3 | Yes | 3A991.B.2.B | PURE MATTE TIN | FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY | 8542.32.00.41 | SRAMs | CMOS | QUAD | GULL WING | 260 | 1 | 0.65 mm | unknown | 100 | R-PQFP-G100 | Not Qualified | 2.7 V | 2.5/3.3 V | INDUSTRIAL | 2.3 V | SYNCHRONOUS | 0.215 mA | 512KX36 | 3-STATE | 1.6 mm | 36 | 0.05 A | 18874368 bit | PARALLEL | COMMON | CACHE SRAM | 2.3 V | 20 mm | 14 mm | ||||||||
![]() | Mfr Part No GS816032BT-150I | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | YES | 100 | 7.5 ns | 150 MHz | GSI TECHNOLOGY | GSI Technology | GS816032BT-150I | 3 | 524288 words | 512000 | 85 °C | -40 °C | PLASTIC/EPOXY | LQFP | LQFP, QFP100,.63X.87 | QFP100,.63X.87 | RECTANGULAR | FLATPACK, LOW PROFILE | Obsolete | QFP | NOT SPECIFIED | 5.74 | Non-Compliant | No | 2.5 V | No | 3A991.B.2.B | FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY | 8542.32.00.41 | SRAMs | CMOS | QUAD | GULL WING | NOT SPECIFIED | 1 | 0.65 mm | compliant | 100 | R-PQFP-G100 | Not Qualified | 2.7 V | 2.5/3.3 V | INDUSTRIAL | 2.3 V | SYNCHRONOUS | 0.215 mA | 512KX32 | 3-STATE | 1.6 mm | 32 | 16777216 bit | PARALLEL | COMMON | CACHE SRAM | 2.3 V | 20 mm | 14 mm |
GS816032BGT-150I
GSI Technology
Package:Memory
Price: please inquire
K4T51043QE-ZCF7
Samsung Semiconductor
Package:Memory
Price: please inquire
HYB25D128800CE-6
Infineon
Package:Memory
Price: please inquire
GS816036BGT-150I
GSI Technology
Package:Memory
Price: please inquire
GS816032BT-150I
GSI Technology
Package:Memory
Price: please inquire
