The category is 'Memory'
Memory (1)
- All Manufacturers
- Access Mode
- Access Time-Max
- Additional Feature
- Address Bus Width (bit)
- Automotive
- Chip Density (bit)
- Clock Frequency-Max (fCLK)
- DRAM Type
- Data Bus Width (bit)
- ECCN (US)
- EU RoHS
- Supply Current-Max
- Supply Current-Max:
0.219 mA
Image | Part Number | Manufacturer | Datasheet | Availability | Pricing(USD) | Quantity | RoHS | Surface Mount | Number of Terminals | Access Time-Max | Address Bus Width (bit) | Automotive | Chip Density (bit) | Clock Frequency-Max (fCLK) | Data Bus Width (bit) | DRAM Type | ECCN (US) | EU RoHS | Ihs Manufacturer | Interface Type | Manufacturer | Manufacturer Part Number | Maximum Access Time (ns) | Maximum Clock Rate (MHz) | Maximum Operating Supply Voltage (V) | Maximum Operating Temperature (°C) | Minimum Operating Supply Voltage (V) | Minimum Operating Temperature (°C) | Mounting | Number of Bits/Word (bit) | Number of I/O Lines (bit) | Number of Internal Banks | Number of Words | Number of Words Code | Number of Words per Bank | Operating Current (mA) | Operating Temperature-Max | Package Body Material | Package Code | Package Description | Package Equivalence Code | Package Length | Package Shape | Package Style | Package Width | Part Life Cycle Code | PCB changed | PPAP | Risk Rank | RoHS | Rohs Code | Supplier Package | Supplier Temperature Grade | Supply Voltage-Nom (Vsup) | Typical Operating Supply Voltage (V) | Part Status | ECCN Code | Additional Feature | Subcategory | Technology | Terminal Position | Terminal Form | Number of Functions | Terminal Pitch | Reach Compliance Code | Pin Count | JESD-30 Code | Qualification Status | Supply Voltage-Max (Vsup) | Power Supplies | Temperature Grade | Supply Voltage-Min (Vsup) | Number of Ports | Operating Mode | Supply Current-Max | Organization | Output Characteristics | Seated Height-Max | Memory Width | Standby Current-Max | Memory Density | I/O Type | Memory IC Type | Refresh Cycles | Sequential Burst Length | Interleaved Burst Length | Access Mode | Self Refresh | Length | Width |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() | Mfr Part No K4B2G1646Q-BCK0000 | Samsung Semiconductor | Datasheet | - | - | Min: 1 Mult: 1 | YES | 96 | 0.225 ns | 17 | No | 2G | 800 MHz | 16 | DDR3 SDRAM | EAR99 | Compliant | SAMSUNG SEMICONDUCTOR INC | SSTL_1.5 | Samsung Semiconductor | K4B2G1646Q-BCK0000 | 0.225 | 1600 | 1.575 | 95 | 1.425 | 0 | Surface Mount | 16 | 16 | 8 | 134217728 words | 128000000 | 16M | 159 | 85 °C | PLASTIC/EPOXY | TFBGA | TFBGA, BGA96,9X16,32 | BGA96,9X16,32 | 13.3 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | 7.5 | Obsolete | 96 | No | 5.83 | Compliant | Yes | FBGA | Commercial | 1.5 V | 1.5 | Obsolete | EAR99 | AUTO/SELF REFRESH | DRAMs | CMOS | BOTTOM | BALL | 1 | 0.8 mm | compliant | 96 | R-PBGA-B96 | Not Qualified | 1.575 V | 1.5 V | OTHER | 1.425 V | 1 | SYNCHRONOUS | 0.219 mA | 128Mx16 | 3-STATE | 1.2 mm | 16 | 0.011 A | 2147483648 bit | COMMON | DDR DRAM | 8192 | 8 | 8 | MULTI BANK PAGE BURST | YES | 13.3 mm | 7.5 mm |

