The category is 'Memory'
Memory (24)
- All Manufacturers
- Access Time-Max
- I/O Type
- Ihs Manufacturer
- JESD-30 Code
- Memory Density
- Memory IC Type
- Memory Width
- Number of Terminals
- Number of Words
- Number of Words Code
- Organization
- Supply Current-Max
- Supply Current-Max:
0.23 mA
Image | Part Number | Manufacturer | Datasheet | Availability | Pricing(USD) | Quantity | RoHS | Lifecycle Status | Mount | Surface Mount | Number of Pins | Number of Terminals | Access Time-Max | Clock Frequency-Max (fCLK) | Ihs Manufacturer | Manufacturer | Manufacturer Package Code | Manufacturer Part Number | Moisture Sensitivity Levels | Number of Words | Number of Words Code | Operating Temperature-Max | Operating Temperature-Min | Package Body Material | Package Code | Package Description | Package Equivalence Code | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Reflow Temperature-Max (s) | Risk Rank | RoHS | Rohs Code | Supply Voltage-Nom (Vsup) | JESD-609 Code | Pbfree Code | ECCN Code | Terminal Finish | Max Operating Temperature | Min Operating Temperature | Additional Feature | HTS Code | Subcategory | Technology | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Terminal Pitch | Reach Compliance Code | Frequency | Time@Peak Reflow Temperature-Max (s) | Pin Count | JESD-30 Code | Qualification Status | Brand Name | Operating Supply Voltage | Supply Voltage-Max (Vsup) | Power Supplies | Temperature Grade | Supply Voltage-Min (Vsup) | Max Supply Voltage | Min Supply Voltage | Number of Ports | Nominal Supply Current | Operating Mode | Supply Current-Max | Access Time | Data Bus Width | Organization | Output Characteristics | Seated Height-Max | Memory Width | Address Bus Width | Density | Standby Current-Max | Memory Density | Max Frequency | Parallel/Serial | I/O Type | Sync/Async | Word Size | Memory IC Type | Standby Voltage-Min | Refresh Cycles | Sequential Burst Length | Interleaved Burst Length | Access Mode | Self Refresh | Length | Width | Thickness | Radiation Hardening | Lead Free |
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![]() | Mfr Part No MT47H64M4BP-5E:B | Micron | Datasheet | - | - | Min: 1 Mult: 1 | YES | 60 | 0.6 ns | 200 MHz | MICRON TECHNOLOGY INC | Micron Technology Inc | MT47H64M4BP-5E:B | 67108864 words | 64000000 | 85 °C | PLASTIC/EPOXY | TFBGA | TFBGA, BGA60,9X11,32 | BGA60,9X11,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | BGA | 30 | 5.82 | Yes | 1.8 V | e1 | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | AUTO/SELF REFRESH | 8542.32.00.24 | DRAMs | CMOS | BOTTOM | BALL | 260 | 1 | 0.8 mm | not_compliant | 60 | R-PBGA-B60 | Not Qualified | 1.9 V | 1.8 V | OTHER | 1.7 V | 1 | SYNCHRONOUS | 0.23 mA | 64MX4 | 3-STATE | 1.2 mm | 4 | 0.005 A | 268435456 bit | COMMON | DDR DRAM | 8192 | 4,8 | 4,8 | FOUR BANK PAGE BURST | YES | 12 mm | 8 mm | ||||||||||||||||||||||||||||||
![]() | Mfr Part No HYB18T512160BF-3.7 | Qimonda | Datasheet | - | - | Min: 1 Mult: 1 | YES | 84 | 0.5 ns | 266 MHz | QIMONDA AG | Qimonda AG | HYB18T512160BF-3.7 | 3 | 33554432 words | 32000000 | 95 °C | PLASTIC/EPOXY | TFBGA | TFBGA, BGA84,9X15,32 | BGA84,9X15,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | BGA | 40 | 5.68 | Yes | 1.8 V | EAR99 | AUTO/SELF REFRESH | 8542.32.00.28 | DRAMs | CMOS | BOTTOM | BALL | 260 | 1 | 0.8 mm | unknown | 84 | R-PBGA-B84 | Not Qualified | 1.9 V | 1.8 V | OTHER | 1.7 V | 1 | SYNCHRONOUS | 0.23 mA | 32MX16 | 3-STATE | 1.2 mm | 16 | 0.007 A | 536870912 bit | COMMON | DDR DRAM | 8192 | 4,8 | 4,8 | FOUR BANK PAGE BURST | YES | 12.5 mm | 10 mm | |||||||||||||||||||||||||||||||
![]() | Mfr Part No MT47H64M16HR-3L:H | Micron | Datasheet | - | - | Min: 1 Mult: 1 | Obsolete (Last Updated: 2 years ago) | Surface Mount | YES | 84 | 84 | 0.45 ns | 333 MHz | MICRON TECHNOLOGY INC | Micron Technology Inc | MT47H64M16HR-3L:H | 67108864 words | 64000000 | 85 °C | PLASTIC/EPOXY | TFBGA | TFBGA, BGA84,9X15,32 | BGA84,9X15,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | BGA | 30 | 5.15 | Compliant | Yes | 1.8 V | e1 | Yes | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | 85 °C | 0 °C | AUTO/SELF REFRESH | 8542.32.00.32 | DRAMs | CMOS | BOTTOM | BALL | 260 | 1 | 0.8 mm | compliant | 84 | R-PBGA-B84 | Not Qualified | 1.8 V | 1.9 V | 1.8 V | OTHER | 1.7 V | 1.9 V | 1.7 V | 1 | 135 mA | SYNCHRONOUS | 0.23 mA | 450 ps | 16 b | 64MX16 | 3-STATE | 1.2 mm | 16 | 16 b | 1 Gb | 0.007 A | 1073741824 bit | 667 MHz | COMMON | DDR DRAM | 8192 | 4,8 | 4,8 | MULTI BANK PAGE BURST | YES | 12.5 mm | 8 mm | No | Lead Free | ||||||||||||
![]() | Mfr Part No W9812G2GH-6 | Winbond | Datasheet | - | - | Min: 1 Mult: 1 | Surface Mount | YES | 86 | 86 | 5 ns | 166 MHz | WINBOND ELECTRONICS CORP | Winbond Electronics Corp | W9812G2GH-6 | 4194304 words | 4000000 | 70 °C | PLASTIC/EPOXY | TSOP2 | TSOP2, TSSOP86,.46,20 | TSSOP86,.46,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | TSOP2 | NOT SPECIFIED | 5.7 | Compliant | Yes | 3.3 V | EAR99 | 70 °C | 0 °C | AUTO/SELF REFRESH | 8542.32.00.02 | DRAMs | CMOS | DUAL | GULL WING | NOT SPECIFIED | 1 | 0.5 mm | compliant | 86 | R-PDSO-G86 | Not Qualified | 3.3 V | 3.6 V | 3.3 V | COMMERCIAL | 3 V | 1 | SYNCHRONOUS | 0.23 mA | 32 b | 4MX32 | 3-STATE | 1.2 mm | 32 | 14 b | 128 Mb | 0.002 A | 134217728 bit | 166 MHz | COMMON | SYNCHRONOUS DRAM | 4096 | 1,2,4,8,FP | 1,2,4,8 | FOUR BANK PAGE BURST | YES | 22.22 mm | 10.16 mm | No | |||||||||||||||||||||
![]() | Mfr Part No MT48LC4M16A2TG-7E:G | Micron | Datasheet | - | - | Min: 1 Mult: 1 | YES | 54 | 5.4 ns | 143 MHz | MICRON TECHNOLOGY INC | Micron Technology Inc | MT48LC4M16A2TG-7E:G | 4194304 words | 4000000 | 70 °C | PLASTIC/EPOXY | TSOP2 | 0.400 INCH, PLASTIC, TSOP2-54 | TSOP54,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | TSOP2 | 30 | 8.47 | No | 3.3 V | e0 | No | EAR99 | Tin/Lead (Sn/Pb) | AUTO/SELF REFRESH | 8542.32.00.02 | DRAMs | CMOS | DUAL | GULL WING | 235 | 1 | 0.8 mm | unknown | 54 | R-PDSO-G54 | Not Qualified | 3.6 V | 3.3 V | COMMERCIAL | 3 V | 1 | SYNCHRONOUS | 0.23 mA | 4MX16 | 3-STATE | 1.2 mm | 16 | 0.002 A | 67108864 bit | COMMON | SYNCHRONOUS DRAM | 4096 | 1,2,4,8,FP | 1,2,4,8 | FOUR BANK PAGE BURST | YES | 22.22 mm | 10.16 mm | |||||||||||||||||||||||||||||
![]() | Mfr Part No IC41C16256-35KG | Integrated Silicon Solution Inc | Datasheet | - | - | Min: 1 Mult: 1 | YES | 40 | 35 ns | INTEGRATED SILICON SOLUTION INC | 262144 words | 256000 | 70 °C | PLASTIC/EPOXY | SOJ | SOJ, SOJ40,.44 | SOJ40,.44 | RECTANGULAR | SMALL OUTLINE | Obsolete | Yes | 5 V | e3 | EAR99 | MATTE TIN | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | 8542.32.00.02 | DUAL | J BEND | 260 | 1 | 1.27 mm | compliant | 10 | R-PDSO-J40 | Not Qualified | 5.5 V | COMMERCIAL | 4.5 V | 1 | ASYNCHRONOUS | 0.23 mA | 256KX16 | 3-STATE | 16 | 0.001 A | 4194304 bit | COMMON | EDO DRAM | 512 | EDO PAGE | NO | ||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No IS42R32160F-7BL | Integrated Silicon Solution Inc | Datasheet | - | - | Min: 1 Mult: 1 | YES | 90 | 5.4 ns | 143 MHz | INTEGRATED SILICON SOLUTION INC | 16777216 words | 16000000 | 70 °C | PLASTIC/EPOXY | TFBGA | TFBGA, BGA90,9X15,32 | BGA90,9X15,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Active | Yes | 2.5 V | EAR99 | PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH | 8542.32.00.28 | BOTTOM | BALL | 1 | 0.8 mm | compliant | R-PBGA-B90 | Not Qualified | 3.6 V | COMMERCIAL | 2.3 V | 1 | SYNCHRONOUS | 0.23 mA | 16MX32 | 3-STATE | 1.2 mm | 32 | 0.004 A | 536870912 bit | COMMON | SYNCHRONOUS DRAM | 8192 | 1,2,4,8,FP | 1,2,4,8 | FOUR BANK PAGE BURST | YES | 13 mm | 8 mm | ||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No IS61LPS25636T-133TQ | Integrated Silicon Solution Inc | Datasheet | - | - | Min: 1 Mult: 1 | YES | 100 | 4 ns | 133 MHz | INTEGRATED SILICON SOLUTION INC | 262144 words | 256000 | 70 °C | PLASTIC/EPOXY | LQFP | TQFP-100 | QFP100,.63X.87 | RECTANGULAR | FLATPACK, LOW PROFILE | Obsolete | QFP | No | 3.3 V | e0 | No | 3A991.B.2.A | TIN LEAD | 8542.32.00.41 | QUAD | GULL WING | 1 | 0.65 mm | compliant | 100 | R-PQFP-G100 | Not Qualified | 3.63 V | COMMERCIAL | 3.135 V | SYNCHRONOUS | 0.23 mA | 256KX36 | 3-STATE | 1.6 mm | 36 | 0.04 A | 9437184 bit | PARALLEL | COMMON | CACHE SRAM | 3.14 V | 20 mm | 14 mm | ||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No K4H1G0838A-UCB0 | Samsung Semiconductor | Datasheet | - | - | Min: 1 Mult: 1 | YES | 66 | 0.75 ns | 133 MHz | SAMSUNG SEMICONDUCTOR INC | 3 | 134217728 words | 128000000 | 70 °C | PLASTIC/EPOXY | TSSOP | TSSOP, TSSOP66,.46 | TSSOP66,.46 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | Obsolete | Yes | 2.5 V | e6 | Yes | EAR99 | TIN BISMUTH | 8542.32.00.32 | DUAL | GULL WING | 260 | 0.635 mm | compliant | R-PDSO-G66 | Not Qualified | COMMERCIAL | 0.23 mA | 128MX8 | 3-STATE | 8 | 0.015 A | 1073741824 bit | COMMON | DDR1 DRAM | 8192 | 2,4,8 | 2,4,8 | ||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No HYB18TC256800BF-3.7 | Qimonda AG | Datasheet | - | - | Min: 1 Mult: 1 | YES | 60 | 0.5 ns | 266 MHz | QIMONDA AG | 3 | 33554432 words | 32000000 | 85 °C | PLASTIC/EPOXY | TFBGA | TFBGA, BGA60,9X11,32 | BGA60,9X11,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | BGA | Yes | 1.8 V | Yes | EAR99 | AUTO/SELF REFRESH | 8542.32.00.24 | BOTTOM | BALL | 1 | 0.8 mm | unknown | 60 | R-PBGA-B60 | Not Qualified | 1.9 V | OTHER | 1.7 V | 1 | SYNCHRONOUS | 0.23 mA | 32MX8 | 3-STATE | 1.2 mm | 8 | 0.007 A | 268435456 bit | COMMON | DDR1 DRAM | 8192 | 4,8 | 4,8 | FOUR BANK PAGE BURST | YES | 10.5 mm | 10 mm | ||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No H5PS1G83EFR-S5 | SK Hynix Inc | Datasheet | - | - | Min: 1 Mult: 1 | YES | 60 | 0.4 ns | 400 MHz | SK HYNIX INC | 134217728 words | 128000000 | 85 °C | PLASTIC/EPOXY | TFBGA | TFBGA, BGA60,9X11,32 | BGA60,9X11,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | BGA | Yes | 1.8 V | e1 | EAR99 | Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5) | AUTO/SELF REFRESH | 8542.32.00.32 | BOTTOM | BALL | 260 | 1 | 0.8 mm | unknown | 20 | 60 | R-PBGA-B60 | Not Qualified | 1.9 V | OTHER | 1.7 V | 1 | SYNCHRONOUS | 0.23 mA | 128MX8 | 3-STATE | 1.2 mm | 8 | 1073741824 bit | COMMON | DDR2 DRAM | 8192 | 4,8 | 4,8 | MULTI BANK PAGE BURST | YES | 11.4 mm | 8 mm | |||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No 70V9159L9BF | Renesas | Datasheet | - | - | Min: 1 Mult: 1 | Surface Mount | YES | 100 | 100 | 9 ns | 66.7 MHz | INTEGRATED DEVICE TECHNOLOGY INC | Integrated Device Technology Inc | BF100 | 70V9159L9BF | 3 | 8000 | 8000 | 70 °C | PLASTIC/EPOXY | LFBGA | 10 X 10 MM, 1.4 MM HEIGHT, 0.8 MM PITCH, FBGA-100 | BGA100,10X10,32 | SQUARE | GRID ARRAY, LOW PROFILE, FINE PITCH | Obsolete | CABGA | NOT SPECIFIED | 5.9 | Compliant | No | 3.3 V | e0 | No | EAR99 | Tin/Lead (Sn63Pb37) | 70 °C | 0 °C | FLOW-THROUGH OR PIPELINED ARCHITECTURE | 8542.32.00.41 | SRAMs | CMOS | BOTTOM | BALL | 225 | 1 | 0.8 mm | not_compliant | 40 MHz | 100 | S-PBGA-B100 | Not Qualified | Integrated Device Technology | 3.3 V | 3.6 V | 3.3 V | COMMERCIAL | 3 V | 3.6 V | 3 V | 2 | 230 mA | SYNCHRONOUS | 0.23 mA | 20 ns | 8KX9 | 3-STATE | 1.4 mm | 9 | 13 b | 72 kb | 0.003 A | 73728 bit | PARALLEL | COMMON | Synchronous | 9 b | DUAL-PORT SRAM | 3 V | 10 mm | 10 mm | 1.4 mm | No | Contains Lead | |||||||||||
![]() | Mfr Part No M5M54R08AJ-10 | Mitsubishi Electric | Datasheet | - | - | Min: 1 Mult: 1 | YES | 36 | 10 ns | MITSUBISHI ELECTRIC CORP | 524288 words | 512000 | 70 °C | PLASTIC/EPOXY | SOJ | SOJ, SOJ36,.44 | SOJ36,.44 | RECTANGULAR | SMALL OUTLINE | Obsolete | SOJ | No | 3.3 V | e0 | 3A991.B.2.A | TIN LEAD | 8542.32.00.41 | DUAL | J BEND | 1 | 1.27 mm | unknown | 36 | R-PDSO-J36 | Not Qualified | 3.6 V | COMMERCIAL | 3 V | ASYNCHRONOUS | 0.23 mA | 512KX8 | 3-STATE | 3.55 mm | 8 | 0.01 A | 4194304 bit | PARALLEL | COMMON | STANDARD SRAM | 3.14 V | 23.49 mm | 10.16 mm | ||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No IC41C16256-35KG | Integrated Circuit Solution Inc | Datasheet | - | - | Min: 1 Mult: 1 | YES | 40 | 35 ns | INTEGRATED CIRCUIT SOLUTION INC | 262144 words | 256000 | 70 °C | PLASTIC/EPOXY | SOJ | SOJ, SOJ40,.44 | SOJ40,.44 | RECTANGULAR | SMALL OUTLINE | Transferred | Yes | 5 V | EAR99 | 8542.32.00.02 | DUAL | J BEND | 1.27 mm | unknown | R-PDSO-J40 | Not Qualified | COMMERCIAL | 0.23 mA | 256KX16 | 3-STATE | 16 | 0.001 A | 4194304 bit | COMMON | EDO DRAM | 512 | NO | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No IS42R32160F-7BLI | Integrated Silicon Solution Inc | Datasheet | - | - | Min: 1 Mult: 1 | YES | 90 | 5.4 ns | 143 MHz | INTEGRATED SILICON SOLUTION INC | 16777216 words | 16000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TFBGA | TFBGA, BGA90,9X15,32 | BGA90,9X15,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Active | Yes | 2.5 V | EAR99 | PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH | 8542.32.00.28 | BOTTOM | BALL | 1 | 0.8 mm | compliant | R-PBGA-B90 | Not Qualified | 3.6 V | INDUSTRIAL | 2.3 V | 1 | SYNCHRONOUS | 0.23 mA | 16MX32 | 3-STATE | 1.2 mm | 32 | 0.004 A | 536870912 bit | COMMON | SYNCHRONOUS DRAM | 8192 | 1,2,4,8,FP | 1,2,4,8 | FOUR BANK PAGE BURST | YES | 13 mm | 8 mm | |||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No KM616V4002BTI-12 | Samsung Semiconductor | Datasheet | - | - | Min: 1 Mult: 1 | YES | 44 | 12 ns | SAMSUNG SEMICONDUCTOR INC | 262144 words | 256000 | 85 °C | -40 °C | PLASTIC/EPOXY | TSOP2 | TSOP2, TSOP44,.46,32 | TSOP44,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | TSOP2 | No | 3.3 V | e0 | No | 3A991.B.2.A | TIN LEAD | 8542.32.00.41 | DUAL | GULL WING | 1 | 0.8 mm | unknown | 44 | R-PDSO-G44 | Not Qualified | 3.6 V | INDUSTRIAL | 3 V | ASYNCHRONOUS | 0.23 mA | 256KX16 | 3-STATE | 1.2 mm | 16 | 0.01 A | 4194304 bit | PARALLEL | COMMON | STANDARD SRAM | 3 V | 18.41 mm | 10.16 mm | ||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No K4H511638G-LCB3T | Samsung Semiconductor | Datasheet | - | - | Min: 1 Mult: 1 | YES | 66 | 0.7 ns | 166 MHz | SAMSUNG SEMICONDUCTOR INC | 3 | 33554432 words | 32000000 | 70 °C | PLASTIC/EPOXY | TSSOP | TSSOP66,.46 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | Obsolete | Yes | 2.5 V | e6 | Yes | EAR99 | TIN BISMUTH | 8542.32.00.28 | DUAL | GULL WING | 260 | 0.635 mm | unknown | R-PDSO-G66 | Not Qualified | COMMERCIAL | 0.23 mA | 32MX16 | 3-STATE | 16 | 0.005 A | 536870912 bit | COMMON | DDR1 DRAM | 8192 | 2,4,8 | 2,4,8 | |||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No T35L6432A-6Q | TM Technology Inc | Datasheet | - | - | Min: 1 Mult: 1 | YES | 100 | 6 ns | 83 MHz | TM TECHNOLOGY INC | 65536 words | 64000 | 70 °C | PLASTIC/EPOXY | QFP | QFP, QFP100,.7X.9 | QFP100,.7X.9 | RECTANGULAR | FLATPACK | Contact Manufacturer | 3.3 V | 3A991.B.2.A | 8542.32.00.41 | QUAD | GULL WING | 1 | 0.65 mm | unknown | R-PQFP-G100 | Not Qualified | 3.6 V | COMMERCIAL | 3.1 V | SYNCHRONOUS | 0.23 mA | 64KX32 | 3-STATE | 3.302 mm | 32 | 0.005 A | 2097152 bit | PARALLEL | COMMON | STANDARD SRAM | 3.14 V | 20 mm | 14 mm | ||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No MT48LC4M16A2B4-7E:G | Micron | Datasheet | - | - | Min: 1 Mult: 1 | YES | 54 | 5.4 ns | 143 MHz | MICRON TECHNOLOGY INC | Micron Technology Inc | MT48LC4M16A2B4-7E:G | 4194304 words | 4000000 | 70 °C | PLASTIC/EPOXY | VFBGA | VFBGA, BGA54,9X9,32 | BGA54,9X9,32 | SQUARE | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | Obsolete | BGA | 30 | 5.42 | Yes | 3.3 V | e1 | Yes | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | AUTO/SELF REFRESH | 8542.32.00.02 | DRAMs | CMOS | BOTTOM | BALL | 260 | 1 | 0.8 mm | compliant | 54 | S-PBGA-B54 | Not Qualified | 3.6 V | 3.3 V | COMMERCIAL | 3 V | 1 | SYNCHRONOUS | 0.23 mA | 4MX16 | 3-STATE | 1 mm | 16 | 0.002 A | 67108864 bit | COMMON | SYNCHRONOUS DRAM | 4096 | 1,2,4,8,FP | 1,2,4,8 | FOUR BANK PAGE BURST | YES | 8 mm | 8 mm | |||||||||||||||||||||||||||||
![]() | Mfr Part No W9812G2IH-6 | Winbond | Datasheet | - | - | Min: 1 Mult: 1 | YES | 86 | 5 ns | 166 MHz | WINBOND ELECTRONICS CORP | Winbond Electronics Corp | W9812G2IH-6 | 4194304 words | 4000000 | 70 °C | PLASTIC/EPOXY | TSOP2 | TSOP2, TSSOP86,.46,20 | TSSOP86,.46,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | TSOP2 | NOT SPECIFIED | 5.71 | Yes | 3.3 V | EAR99 | AUTO/SELF REFRESH | 8542.32.00.02 | DRAMs | CMOS | DUAL | GULL WING | NOT SPECIFIED | 1 | 0.5 mm | unknown | 86 | R-PDSO-G86 | Not Qualified | 3.6 V | 3/3.3 V | COMMERCIAL | 2.7 V | 1 | SYNCHRONOUS | 0.23 mA | 4MX32 | 3-STATE | 1.2 mm | 32 | 0.002 A | 134217728 bit | COMMON | SYNCHRONOUS DRAM | 4096 | 1,2,4,8,FP | 1,2,4,8 | FOUR BANK PAGE BURST | YES | 22.22 mm | 10.16 mm |
MT47H64M4BP-5E:B
Micron
Package:Memory
Price: please inquire
HYB18T512160BF-3.7
Qimonda
Package:Memory
Price: please inquire
MT47H64M16HR-3L:H
Micron
Package:Memory
Price: please inquire
W9812G2GH-6
Winbond
Package:Memory
Price: please inquire
MT48LC4M16A2TG-7E:G
Micron
Package:Memory
Price: please inquire
IC41C16256-35KG
Integrated Silicon Solution Inc
Package:Memory
Price: please inquire
IS42R32160F-7BL
Integrated Silicon Solution Inc
Package:Memory
Price: please inquire
IS61LPS25636T-133TQ
Integrated Silicon Solution Inc
Package:Memory
Price: please inquire
K4H1G0838A-UCB0
Samsung Semiconductor
Package:Memory
Price: please inquire
HYB18TC256800BF-3.7
Qimonda AG
Package:Memory
Price: please inquire
H5PS1G83EFR-S5
SK Hynix Inc
Package:Memory
Price: please inquire
70V9159L9BF
Renesas
Package:Memory
Price: please inquire
M5M54R08AJ-10
Mitsubishi Electric
Package:Memory
Price: please inquire
IC41C16256-35KG
Integrated Circuit Solution Inc
Package:Memory
Price: please inquire
IS42R32160F-7BLI
Integrated Silicon Solution Inc
Package:Memory
Price: please inquire
KM616V4002BTI-12
Samsung Semiconductor
Package:Memory
Price: please inquire
K4H511638G-LCB3T
Samsung Semiconductor
Package:Memory
Price: please inquire
T35L6432A-6Q
TM Technology Inc
Package:Memory
Price: please inquire
MT48LC4M16A2B4-7E:G
Micron
Package:Memory
Price: please inquire
W9812G2IH-6
Winbond
Package:Memory
Price: please inquire
