The category is 'Memory'
Memory (1)
- All Manufacturers
- Access Time-Max
- Address Bus Width (bit)
- Automotive
- Chip Density (bit)
- Clock Frequency-Max (fCLK)
- DRAM Type
- Data Bus Width (bit)
- ECCN (US)
- EU RoHS
- HTS
- Ihs Manufacturer
- Supply Current-Max
- Supply Current-Max:
0.2359 mA
Image | Part Number | Manufacturer | Datasheet | Availability | Pricing(USD) | Quantity | RoHS | Surface Mount | Number of Terminals | Access Time-Max | Address Bus Width (bit) | Automotive | Chip Density (bit) | Clock Frequency-Max (fCLK) | Data Bus Width (bit) | DRAM Type | ECCN (US) | EU RoHS | HTS | Ihs Manufacturer | Interface Type | Lead Shape | Manufacturer | Manufacturer Part Number | Maximum Access Time (ns) | Maximum Clock Rate (MHz) | Maximum Operating Supply Voltage (V) | Maximum Operating Temperature (°C) | Minimum Operating Supply Voltage (V) | Minimum Operating Temperature (°C) | Mounting | Number of Bits/Word (bit) | Number of I/O Lines (bit) | Number of Internal Banks | Number of Words per Bank | Operating Current (mA) | Operating Temperature-Max | Package Body Material | Package Code | Package Description | Package Equivalence Code | Package Height | Package Length | Package Shape | Package Style | Package Width | Part Life Cycle Code | PCB changed | PPAP | Risk Rank | Rohs Code | Standard Package Name | Supplier Package | Supplier Temperature Grade | Supply Voltage-Nom (Vsup) | Typical Operating Supply Voltage (V) | Part Status | Subcategory | Technology | Terminal Position | Terminal Form | Terminal Pitch | Reach Compliance Code | Pin Count | JESD-30 Code | Qualification Status | Power Supplies | Temperature Grade | Supply Current-Max | Organization | Output Characteristics | Standby Current-Max | Memory Density | I/O Type | Memory IC Type | Refresh Cycles | Sequential Burst Length | Interleaved Burst Length |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() | Mfr Part No K4A8G045WB-BCRC | Samsung Semiconductor | Datasheet | 24000 |
| Min: 1 Mult: 1 | YES | 78 | 0.175 ns | 19 | No | 8G | 1200 MHz | 4 | DDR4 SDRAM | EAR99 | Compliant | 8542.32.00.36 | SAMSUNG SEMICONDUCTOR INC | POD | Ball | Samsung Semiconductor | K4A8G045WB-BCRC | 0.175 | 2400 | 1.26 | 95 | 1.14 | 0 | Surface Mount | 4 | 4 | 16 | 128M | 93 | 85 °C | PLASTIC/EPOXY | FBGA | FBGA, BGA78,9X13,32 | BGA78,9X13,32 | 0.73 | 11 | RECTANGULAR | GRID ARRAY, FINE PITCH | 7.5 | Obsolete | 78 | No | 5.8 | Yes | BGA | FBGA | Commercial | 1.2 V | 1.2 | Active | DRAMs | CMOS | BOTTOM | BALL | 0.8 mm | compliant | 78 | R-PBGA-B78 | Not Qualified | 1.2 V | OTHER | 0.2359 mA | 2Gx4 | 3-STATE | 0.015 A | 8589934592 bit | COMMON | DDR DRAM | 8192 | 4,8 | 4,8 |

