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The category is 'Memory'

Memory (12)

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Access Time-Max
I/O Type
Ihs Manufacturer
JESD-30 Code
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Number of Words Code
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Supply Current-Max

Supply Current-Max:
0.24 mA

Image	Part Number	Manufacturer	Datasheet	Availability	Pricing(USD)	Quantity	RoHS	Mount	Surface Mount	Number of Pins	Number of Terminals	Access Time-Max	Clock Frequency-Max (fCLK)	Ihs Manufacturer	Manufacturer	Manufacturer Part Number	Moisture Sensitivity Levels	Number of Words	Number of Words Code	Operating Temperature-Max	Operating Temperature-Min	Package Body Material	Package Code	Package Description	Package Equivalence Code	Package Shape	Package Style	Part Life Cycle Code	Part Package Code	Reflow Temperature-Max (s)	Risk Rank	RoHS	Rohs Code	Supply Voltage-Nom (Vsup)	JESD-609 Code	Pbfree Code	ECCN Code	Terminal Finish	Max Operating Temperature	Min Operating Temperature	Additional Feature	HTS Code	Subcategory	Technology	Terminal Position	Terminal Form	Peak Reflow Temperature (Cel)	Number of Functions	Terminal Pitch	Reach Compliance Code	Frequency	Time@Peak Reflow Temperature-Max (s)	Pin Count	JESD-30 Code	Qualification Status	Operating Supply Voltage	Supply Voltage-Max (Vsup)	Power Supplies	Temperature Grade	Supply Voltage-Min (Vsup)	Max Supply Voltage	Min Supply Voltage	Number of Ports	Nominal Supply Current	Operating Mode	Supply Current-Max	Access Time	Data Bus Width	Organization	Output Characteristics	Seated Height-Max	Memory Width	Address Bus Width	Density	Standby Current-Max	Memory Density	Max Frequency	Screening Level	Parallel/Serial	I/O Type	Memory IC Type	Standby Voltage-Min	Output Enable	Refresh Cycles	Sequential Burst Length	Interleaved Burst Length	Access Mode	Self Refresh	Length	Width	Radiation Hardening	Lead Free
	Mfr Part No MT47H64M8CF-3:F	Micron	Datasheet	-	-	Min: 1 Mult: 1		Surface Mount	YES	60	60	0.45 ns	333 MHz	MICRON TECHNOLOGY INC	Micron Technology Inc	MT47H64M8CF-3:F		67108864 words	64000000	85 °C		PLASTIC/EPOXY	TFBGA	TFBGA, BGA60,9X11,32	BGA60,9X11,32	RECTANGULAR	GRID ARRAY, THIN PROFILE, FINE PITCH	Obsolete	BGA	30	5.58	Compliant	Yes	1.8 V	e1		EAR99	Tin/Silver/Copper (Sn/Ag/Cu)	85 °C	0 °C	AUTO/SELF REFRESH	8542.32.00.28	DRAMs	CMOS	BOTTOM	BALL	260	1	0.8 mm	unknown			60	R-PBGA-B60	Not Qualified	1.8 V	1.9 V	1.8 V	OTHER	1.7 V	1.9 V	1.7 V	1	180 mA	SYNCHRONOUS	0.24 mA	450 ps	8 b	64MX8	3-STATE	1.2 mm	8	16 b	512 Mb	0.007 A	536870912 bit	667 MHz			COMMON	DDR DRAM			8192	4,8	4,8	FOUR BANK PAGE BURST	YES	10 mm	8 mm	No	Lead Free
	Mfr Part No TC55VL818FF-83	Toshiba America Electronic Components	Datasheet	-	-	Min: 1 Mult: 1			YES		100	9 ns	83 MHz	TOSHIBA CORP				524288 words	512000	70 °C		PLASTIC/EPOXY	LQFP	LQFP, QFP100,.63X.87	QFP100,.63X.87	RECTANGULAR	FLATPACK, LOW PROFILE	Obsolete	QFP				No	3.3 V	e0		3A991.B.2.A	Tin/Lead (Sn/Pb)				8542.32.00.41			QUAD	GULL WING		1	0.65 mm	unknown			100	R-PQFP-G100	Not Qualified		3.465 V		COMMERCIAL	3.135 V					SYNCHRONOUS	0.24 mA			512KX18	3-STATE	1.7 mm	18			0.01 A	9437184 bit			PARALLEL	COMMON	STANDARD SRAM	3.14 V							20 mm	14 mm
	Mfr Part No IDT7133L70GB	Integrated Device Technology Inc	Datasheet	-	-	Min: 1 Mult: 1			NO		68	70 ns		INTEGRATED DEVICE TECHNOLOGY INC				2048 words	2000	125 °C	-55 °C	CERAMIC, METAL-SEALED COFIRED	PGA	CAVITY-UP, CERAMIC, PGA-68	PGA68,11X11	SQUARE	GRID ARRAY	Obsolete	PGA				No	5 V	e0	Yes	3A001.A.2.C	TIN LEAD			AUTOMATIC POWER-DOWN	8542.32.00.41			PERPENDICULAR	PIN/PEG		1	2.54 mm	not_compliant			68	S-CPGA-P68	Not Qualified		5.5 V		MILITARY	4.5 V			2		ASYNCHRONOUS	0.24 mA			2KX16	3-STATE	5.207 mm	16			0.004 A	32768 bit		38535Q/M;38534H;883B	PARALLEL	COMMON	MULTI-PORT SRAM	2 V	YES						29.464 mm	29.464 mm
	Mfr Part No K4H560438E-TCA2	Samsung Semiconductor	Datasheet	-	-	Min: 1 Mult: 1			YES		66	0.75 ns	133 MHz	SAMSUNG SEMICONDUCTOR INC				67108864 words	64000000	70 °C		PLASTIC/EPOXY	TSOP2	TSOP2, TSSOP66,.46	TSSOP66,.46	RECTANGULAR	SMALL OUTLINE, THIN PROFILE	Obsolete	TSOP2				No	2.5 V	e0		EAR99	TIN LEAD			AUTO/SELF REFRESH	8542.32.00.24			DUAL	GULL WING		1	0.65 mm	compliant			66	R-PDSO-G66	Not Qualified		2.7 V		COMMERCIAL	2.3 V			1		SYNCHRONOUS	0.24 mA			64MX4	3-STATE	1.2 mm	4			0.003 A	268435456 bit				COMMON	DDR1 DRAM			8192	2,4,8	2,4,8	FOUR BANK PAGE BURST	YES	22.22 mm	10.16 mm
	Mfr Part No HM10474-8	Hitachi Ltd	Datasheet	-	-	Min: 1 Mult: 1			NO		24	8 ns		HITACHI LTD				1024 words	1000	75 °C		CERAMIC, GLASS-SEALED	DIP	DIP, DIP24,.4	DIP24,.4	RECTANGULAR	IN-LINE	Obsolete	DIP				No		e0	No	EAR99	TIN LEAD				8542.32.00.41			DUAL	THROUGH-HOLE		1	2.54 mm	unknown			24	R-GDIP-T24	Not Qualified				COMMERCIAL EXTENDED				1		ASYNCHRONOUS	0.24 mA			1KX4	OPEN-EMITTER	5.8 mm	4				4096 bit			PARALLEL	SEPARATE	STANDARD SRAM		NO						30.3 mm	10.16 mm
	Mfr Part No IDT7133L70XCB	Integrated Device Technology Inc	Datasheet	-	-	Min: 1 Mult: 1			NO		68	70 ns		INTEGRATED DEVICE TECHNOLOGY INC				2048 words	2000	125 °C	-55 °C	CERAMIC, METAL-SEALED COFIRED	SDIP	0.600 INCH, 0.070 INCH PITCH, SIDE BRAZED, SDIP-68	SDIP68,.6	RECTANGULAR	IN-LINE, SHRINK PITCH	Obsolete	DIP				No	5 V	e0	No	3A001.A.2.C	TIN LEAD			AUTOMATIC POWER-DOWN	8542.32.00.41			DUAL	THROUGH-HOLE		1	1.778 mm	not_compliant			68	R-CDIP-T68	Not Qualified		5.5 V		MILITARY	4.5 V			2		ASYNCHRONOUS	0.24 mA			2KX16	3-STATE	4.826 mm	16			0.004 A	32768 bit		38535Q/M;38534H;883B	PARALLEL	COMMON	MULTI-PORT SRAM	2 V	YES						61.214 mm	15.24 mm
	Mfr Part No HY5DU561622DF-J	SK Hynix Inc	Datasheet	-	-	Min: 1 Mult: 1			YES		60	0.7 ns	166 MHz	SK HYNIX INC				16777216 words	16000000	70 °C		PLASTIC/EPOXY	TBGA	TBGA, BGA60,9X12,40/32	BGA60,9X12,40/32	RECTANGULAR	GRID ARRAY, THIN PROFILE	Obsolete	BGA				Yes	2.5 V			EAR99				AUTO/SELF REFRESH	8542.32.00.24			BOTTOM	BALL	NOT SPECIFIED	1	1 mm	unknown		NOT SPECIFIED	60	R-PBGA-B60	Not Qualified		2.7 V		COMMERCIAL	2.3 V			1		SYNCHRONOUS	0.24 mA			16MX16	3-STATE	1.17 mm	16			0.01 A	268435456 bit				COMMON	DDR1 DRAM			8192	2,4,8	2,4,8	FOUR BANK PAGE BURST	YES	13 mm	8 mm
	Mfr Part No IDT7M4048S55CB	Integrated Device Technology Inc	Datasheet	-	-	Min: 1 Mult: 1			NO		32	55 ns		INTEGRATED DEVICE TECHNOLOGY INC				524288 words	512000	125 °C	-55 °C	UNSPECIFIED	DIP		DIP32,.6	RECTANGULAR	MICROELECTRONIC ASSEMBLY	Obsolete					No	5 V	e0		3A001.A.2.C	TIN LEAD				8542.32.00.41			DUAL	THROUGH-HOLE		1	2.54 mm	not_compliant				R-XDMA-T32	Not Qualified		5.5 V		MILITARY	4.5 V			1		ASYNCHRONOUS	0.24 mA			512KX8	3-STATE		8			0.06 A	4194304 bit		MIL-STD-883 Class B (Modified)	PARALLEL	COMMON	SRAM MODULE	4.5 V	YES
	Mfr Part No MT47H64M8CF-3IT:F	Micron	Datasheet	-	-	Min: 1 Mult: 1		Surface Mount	YES	60	60	0.45 ns	333 MHz	MICRON TECHNOLOGY INC	Micron Technology Inc	MT47H64M8CF-3IT:F		67108864 words	64000000	85 °C	-40 °C	PLASTIC/EPOXY	TFBGA	TFBGA, BGA60,9X11,32	BGA60,9X11,32	RECTANGULAR	GRID ARRAY, THIN PROFILE, FINE PITCH	Obsolete	BGA	30	5.6	Compliant	Yes	1.8 V	e1		EAR99	Tin/Silver/Copper (Sn/Ag/Cu)	85 °C	-40 °C	AUTO/SELF REFRESH	8542.32.00.28	DRAMs	CMOS	BOTTOM	BALL	260	1	0.8 mm	unknown			60	R-PBGA-B60	Not Qualified	1.8 V	1.9 V	1.8 V	INDUSTRIAL	1.7 V	1.9 V	1.7 V	1	180 mA	SYNCHRONOUS	0.24 mA	450 ps	8 b	64MX8	3-STATE	1.2 mm	8	16 b	512 Mb	0.007 A	536870912 bit	667 MHz			COMMON	DDR DRAM			8192	4,8	4,8	FOUR BANK PAGE BURST	YES	10 mm	8 mm	No	Lead Free
	Mfr Part No MT47H128M4B6-3:D	Micron	Datasheet	-	-	Min: 1 Mult: 1			YES		60	0.45 ns	333 MHz	MICRON TECHNOLOGY INC	Micron Technology Inc	MT47H128M4B6-3:D		134217728 words	128000000	85 °C		PLASTIC/EPOXY	TFBGA	TFBGA, BGA60,9X11,32	BGA60,9X11,32	SQUARE	GRID ARRAY	Obsolete	BGA	30	5.62		Yes	1.8 V	e1		EAR99	Tin/Silver/Copper (Sn/Ag/Cu)			AUTO/SELF REFRESH	8542.32.00.28	DRAMs	CMOS	BOTTOM	BALL	260	1	0.8 mm	unknown			60	S-PBGA-B60	Not Qualified		1.9 V	1.8 V	OTHER	1.7 V			1		SYNCHRONOUS	0.24 mA			128MX4	3-STATE	1.2 mm	4			0.007 A	536870912 bit				COMMON	DDR DRAM			8192	4,8	4,8	FOUR BANK PAGE BURST	YES	10 mm	10 mm
	Mfr Part No MT47H64M8B6-3IT:D	Micron	Datasheet	-	-	Min: 1 Mult: 1			YES		60	0.45 ns	333 MHz	MICRON TECHNOLOGY INC	Micron Technology Inc	MT47H64M8B6-3IT:D		67108864 words	64000000	85 °C	-40 °C	PLASTIC/EPOXY	TFBGA	TFBGA, BGA60,9X11,32	BGA60,9X11,32	SQUARE	GRID ARRAY	Obsolete	BGA	30	5.61		Yes	1.8 V	e1		EAR99	Tin/Silver/Copper (Sn/Ag/Cu)			AUTO/SELF REFRESH	8542.32.00.28	DRAMs	CMOS	BOTTOM	BALL	260	1	0.8 mm	not_compliant			60	S-PBGA-B60	Not Qualified		1.9 V	1.8 V	INDUSTRIAL	1.7 V			1		SYNCHRONOUS	0.24 mA			64MX8	3-STATE	1.2 mm	8			0.007 A	536870912 bit				COMMON	DDR DRAM			8192	4,8	4,8	FOUR BANK PAGE BURST	YES	10 mm	10 mm
	Mfr Part No K4H1G0838A-UCB3	Samsung	Datasheet	-	-	Min: 1 Mult: 1			YES		66	0.7 ns	166 MHz	SAMSUNG SEMICONDUCTOR INC	Samsung Semiconductor	K4H1G0838A-UCB3	3	134217728 words	128000000	70 °C		PLASTIC/EPOXY	TSSOP	TSSOP, TSSOP66,.46	TSSOP66,.46	RECTANGULAR	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	Obsolete		NOT SPECIFIED	5.84	Non-Compliant	Yes	2.5 V	e6	Yes		Tin/Bismuth (Sn97Bi3)					DRAMs	CMOS	DUAL	GULL WING	260		0.635 mm	compliant	166 MHz			R-PDSO-G66	Not Qualified			2.5 V	COMMERCIAL							0.24 mA			128MX8	3-STATE		8			0.015 A	1073741824 bit				COMMON	DDR DRAM			8192	2,4,8	2,4,8						Lead Free