The category is 'Memory'
Memory (2)
- All Manufacturers
- Access Mode
- Access Time-Max
- Additional Feature
- Clock Frequency-Max (fCLK)
- ECCN Code
- I/O Type
- Ihs Manufacturer
- Interleaved Burst Length
- JESD-30 Code
- Length
- Memory IC Type
- Supply Current-Max
- Supply Current-Max:
0.251 mA
Image | Part Number | Manufacturer | Datasheet | Availability | Pricing(USD) | Quantity | RoHS | Surface Mount | Number of Terminals | Access Time-Max | Clock Frequency-Max (fCLK) | Ihs Manufacturer | Manufacturer | Manufacturer Part Number | Moisture Sensitivity Levels | Number of Words | Number of Words Code | Operating Temperature-Max | Operating Temperature-Min | Package Body Material | Package Code | Package Description | Package Equivalence Code | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Reflow Temperature-Max (s) | Risk Rank | Rohs Code | Supply Voltage-Nom (Vsup) | ECCN Code | Additional Feature | HTS Code | Subcategory | Technology | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Terminal Pitch | Reach Compliance Code | Pin Count | JESD-30 Code | Qualification Status | Supply Voltage-Max (Vsup) | Power Supplies | Temperature Grade | Supply Voltage-Min (Vsup) | Number of Ports | Operating Mode | Supply Current-Max | Organization | Output Characteristics | Seated Height-Max | Memory Width | Standby Current-Max | Memory Density | I/O Type | Memory IC Type | Refresh Cycles | Sequential Burst Length | Interleaved Burst Length | Access Mode | Self Refresh | Length | Width |
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![]() | Mfr Part No HYI18T1G800C2C-25F | Qimonda AG | Datasheet | - | - | Min: 1 Mult: 1 | YES | 60 | 0.4 ns | 400 MHz | QIMONDA AG | 1 | 134217728 words | 128000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TFBGA | TFBGA, BGA60,9X11,32 | BGA60,9X11,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | BGA | No | 1.8 V | EAR99 | AUTO/SELF REFRESH | 8542.32.00.32 | BOTTOM | BALL | 1 | 0.8 mm | unknown | 60 | R-PBGA-B60 | Not Qualified | 1.9 V | INDUSTRIAL | 1.7 V | 1 | SYNCHRONOUS | 0.251 mA | 128MX8 | 3-STATE | 1.2 mm | 8 | 1073741824 bit | COMMON | DDR2 DRAM | 8192 | 4,8 | 4,8 | MULTI BANK PAGE BURST | YES | 12.5 mm | 8 mm | ||||||||||
![]() | Mfr Part No NT5CB64M16GP-FL | Nanya | Datasheet | - | - | Min: 1 Mult: 1 | YES | 96 | 0.18 ns | 1066 MHz | NANYA TECHNOLOGY CORP | Nanya Technology Corporation | NT5CB64M16GP-FL | 67108864 words | 64000000 | 85 °C | PLASTIC/EPOXY | VFBGA | VFBGA, BGA96,9X16,32 | BGA96,9X16,32 | RECTANGULAR | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | Active | NOT SPECIFIED | 5.66 | Yes | 1.5 V | EAR99 | AUTO/SELF REFRESH | DRAMs | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 0.8 mm | compliant | R-PBGA-B96 | Not Qualified | 1.575 V | 1.5 V | OTHER | 1.425 V | 1 | SYNCHRONOUS | 0.251 mA | 64MX16 | 3-STATE | 1 mm | 16 | 0.012 A | 1073741824 bit | COMMON | DDR DRAM | 8192 | 8 | 8 | MULTI BANK PAGE BURST | YES | 13 mm | 8 mm |


