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The category is 'Memory'

Memory (9)

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Access Time-Max
Additional Feature
ECCN Code
HTS Code
I/O Type
Ihs Manufacturer
JESD-30 Code
Length
Memory Density
Memory IC Type
Number of Functions
Supply Current-Max

Supply Current-Max:
0.255 mA

Image	Part Number	Manufacturer	Datasheet	Availability	Pricing(USD)	Quantity	RoHS	Factory Lead Time	Package / Case	Surface Mount	Number of Terminals	Access Time-Max	Clock Frequency-Max (fCLK)	Data Rate Architecture	Ihs Manufacturer	Interface Type	Manufacturer	Manufacturer Part Number	Maximum Clock Frequency	Maximum Clock Rate	Maximum Operating Supply Voltage	Maximum Operating Temperature	Memory Types	Minimum Operating Supply Voltage	Minimum Operating Temperature	Moisture Sensitivity Levels	Mounting	Mounting Styles	Number of I/O Lines	Number of Words	Number of Words Code	Operating Temperature-Max	Operating Temperature-Min	Package Body Material	Package Code	Package Description	Package Equivalence Code	Package Shape	Package Style	Part Life Cycle Code	Part Package Code	Reflow Temperature-Max (s)	Risk Rank	RoHS	Rohs Code	Supplier Package	Supply Voltage-Max	Supply Voltage-Min	Supply Voltage-Nom (Vsup)	Timing Type	Typical Operating Supply Voltage	Usage Level	Operating Temperature	Series	JESD-609 Code	Pbfree Code	ECCN Code	Terminal Finish	Max Operating Temperature	Min Operating Temperature	Gender	Additional Feature	HTS Code	Subcategory	Technology	Terminal Position	Terminal Form	Peak Reflow Temperature (Cel)	Number of Functions	Terminal Pitch	Reach Compliance Code	Pin Count	JESD-30 Code	Qualification Status	Supply Voltage-Max (Vsup)	Power Supplies	Contact Style	Temperature Grade	Supply Voltage-Min (Vsup)	Interface	Memory Size	Number of Ports	Operating Mode	Supply Current-Max	Access Time	Architecture	Organization	Output Characteristics	Seated Height-Max	Memory Width	Address Bus Width	Density	Standby Current-Max	Memory Density	Screening Level	Parallel/Serial	I/O Type	Memory IC Type	Standby Voltage-Min	Output Enable	Refresh Cycles	Sequential Burst Length	Interleaved Burst Length	Access Mode	Self Refresh	Length	Width	Radiation Hardening
	Mfr Part No GS816036BGT-200	GSI Technology	Datasheet	14 In Stock	-	Min: 1 Mult: 1				YES	100	6.5 ns	200 MHz		GSI TECHNOLOGY		GSI Technology	GS816036BGT-200								3				524288 words	512000	70 °C		PLASTIC/EPOXY	LQFP	LQFP, QFP100,.63X.87	QFP100,.63X.87	RECTANGULAR	FLATPACK, LOW PROFILE	Obsolete	QFP	NOT SPECIFIED	8.45	Compliant	Yes				2.5 V						e3	Yes	3A991.B.2.B	PURE MATTE TIN	70 °C	0 °C		FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY	8542.32.00.41	SRAMs	CMOS	QUAD	GULL WING	260	1	0.65 mm	compliant	100	R-PQFP-G100	Not Qualified	2.7 V	2.5/3.3 V		COMMERCIAL	2.3 V			4	SYNCHRONOUS	0.255 mA			512KX36	3-STATE	1.6 mm	36	19 b	18 Mb	0.04 A	18874368 bit		PARALLEL	COMMON	CACHE SRAM	2.3 V							20 mm	14 mm	No
	Mfr Part No MT48LC64M8A2TG-75:C	Micron	Datasheet	12 In Stock	-	Min: 1 Mult: 1				YES	54	5.4 ns	133 MHz		MICRON TECHNOLOGY INC		Micron Technology Inc	MT48LC64M8A2TG-75:C												67108864 words	64000000	70 °C		PLASTIC/EPOXY	TSOP2	0.400 INCH, PLASTIC, TSOP2-54	TSOP54,.46,32	RECTANGULAR	SMALL OUTLINE, THIN PROFILE	Obsolete	TSOP2	30	5.5		No				3.3 V						e0	No	EAR99	Tin/Lead (Sn/Pb)				AUTO/SELF REFRESH	8542.32.00.28	DRAMs	CMOS	DUAL	GULL WING	245	1	0.8 mm	unknown	54	R-PDSO-G54	Not Qualified	3.6 V	3.3 V		COMMERCIAL	3 V			1	SYNCHRONOUS	0.255 mA			64MX8	3-STATE	1.2 mm	8			0.0035 A	536870912 bit			COMMON	SYNCHRONOUS DRAM			8192	1,2,4,8,FP	1,2,4,8	FOUR BANK PAGE BURST	YES	22.22 mm	10.16 mm
	Mfr Part No IDT7007L35PF	Renesas	Datasheet	-	-	Min: 1 Mult: 1				YES	80	35 ns			INTEGRATED DEVICE TECHNOLOGY INC		Integrated Device Technology Inc	IDT7007L35PF					RAM, SRAM			3				32768 words	32000	70 °C		PLASTIC/EPOXY	LQFP	14 X 14 MM, 1.40 MM HEIGHT, TQFP-80	QFP80,.64SQ	SQUARE	FLATPACK, LOW PROFILE	Obsolete	QFP	20	5.1	Non-Compliant	No				5 V						e0	No	EAR99	Tin/Lead (Sn85Pb15)	70 °C	0 °C		INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN	8542.32.00.41	SRAMs	CMOS	QUAD	GULL WING	240	1	0.65 mm	not_compliant	80	S-PQFP-G80	Not Qualified	5.5 V	5 V		COMMERCIAL	4.5 V	Parallel		2	ASYNCHRONOUS	0.255 mA			32KX8	3-STATE	1.6 mm	8			0.005 A	262144 bit		PARALLEL	COMMON	DUAL-PORT SRAM	4.5 V	YES						14 mm	14 mm
	Mfr Part No IDT7027L35PF	Renesas	Datasheet	-	-	Min: 1 Mult: 1				YES	100	35 ns			INTEGRATED DEVICE TECHNOLOGY INC		Integrated Device Technology Inc	IDT7027L35PF					RAM, SRAM			3				32768 words	32000	70 °C		PLASTIC/EPOXY	LFQFP	TQFP-100	QFP100,.63SQ,20	SQUARE	FLATPACK, LOW PROFILE, FINE PITCH	Obsolete	QFP	20	5.14	Non-Compliant	No				5 V						e0	No	EAR99	Tin/Lead (Sn85Pb15)	70 °C	0 °C		INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN; LOW POWER STANDBY MODE	8542.32.00.41	SRAMs	CMOS	QUAD	GULL WING	240	1	0.5 mm	not_compliant	100	S-PQFP-G100	Not Qualified	5.5 V	5 V		COMMERCIAL	4.5 V	Parallel		2	ASYNCHRONOUS	0.255 mA			32KX16	3-STATE	1.6 mm	16			0.015 A	524288 bit		PARALLEL	COMMON	DUAL-PORT SRAM	4.5 V	YES						14 mm	14 mm
	Mfr Part No MT48V8M32LFB5-75	Micron Technology	Datasheet	-	-	Min: 1 Mult: 1				YES	90	6 ns	133 MHz		MICRON TECHNOLOGY INC		Micron Technology Inc	MT48V8M32LFB5-75												8388608 words	8000000	70 °C		PLASTIC/EPOXY	VFBGA	VFBGA, BGA90,9X15,32	BGA90,9X15,32	RECTANGULAR	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	Obsolete	BGA	30	5.82		Yes				2.5 V						e1	Yes	EAR99	Tin/Silver/Copper (Sn/Ag/Cu)			Female	AUTO/SELF REFRESH	8542.32.00.24	DRAMs	CMOS	BOTTOM	BALL	260	1	0.8 mm	compliant	90	R-PBGA-B90	Not Qualified	2.7 V	2.5 V	Socket	COMMERCIAL	2.3 V			1	SYNCHRONOUS	0.255 mA			8MX32		1 mm	32			0.00001 A	268435456 bit			COMMON	SYNCHRONOUS DRAM			4096	1,2,4,8,FP	1,2,4,8	FOUR BANK PAGE BURST	YES	13 mm	8 mm
	Mfr Part No HYB18TC256800BF-2.5	Qimonda AG	Datasheet	-	-	Min: 1 Mult: 1				YES	60	0.4 ns	400 MHz		QIMONDA AG											3				33554432 words	32000000	85 °C		PLASTIC/EPOXY	TFBGA	TFBGA, BGA60,9X11,32	BGA60,9X11,32	RECTANGULAR	GRID ARRAY, THIN PROFILE, FINE PITCH	Obsolete	BGA				Yes				1.8 V							Yes	EAR99					AUTO/SELF REFRESH	8542.32.00.24			BOTTOM	BALL		1	0.8 mm	unknown	60	R-PBGA-B60	Not Qualified	1.9 V			OTHER	1.7 V			1	SYNCHRONOUS	0.255 mA			32MX8	3-STATE	1.2 mm	8			0.007 A	268435456 bit			COMMON	DDR1 DRAM			8192	4,8	4,8	FOUR BANK PAGE BURST	YES	10.5 mm	10 mm
	Mfr Part No GS816032BGT-200	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1				YES	100	6.5 ns	200 MHz		GSI TECHNOLOGY		GSI Technology	GS816032BGT-200								3				524288 words	512000	70 °C		PLASTIC/EPOXY	LQFP	LQFP, QFP100,.63X.87	QFP100,.63X.87	RECTANGULAR	FLATPACK, LOW PROFILE	Obsolete	QFP	NOT SPECIFIED	5.67		Yes				2.5 V						e3	Yes	3A991.B.2.B	PURE MATTE TIN				FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY	8542.32.00.41	SRAMs	CMOS	QUAD	GULL WING	260	1	0.65 mm	compliant	100	R-PQFP-G100	Not Qualified	2.7 V	2.5/3.3 V		COMMERCIAL	2.3 V				SYNCHRONOUS	0.255 mA			512KX32	3-STATE	1.6 mm	32				16777216 bit		PARALLEL	COMMON	CACHE SRAM	2.3 V							20 mm	14 mm
	Mfr Part No GS832272C-133I	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		8 Weeks	BGA-209	YES	209	8.5 ns	133 MHz	SDR	GSI TECHNOLOGY	Parallel	GSI Technology	GS832272C-133I	133 MHz	117.6@Flow-Through/133@Pipelined MHz	2.7, 3.6 V	+ 85 C		2.3, 3 V	- 40 C	3	Surface Mount	SMD/SMT	72 Bit	512 kWords	512000	85 °C	-40 °C	PLASTIC/EPOXY	LBGA	LBGA, BGA209,11X19,40	BGA209,11X19,40	RECTANGULAR	GRID ARRAY, LOW PROFILE	Active	BGA	NOT SPECIFIED	5.13		No	FBGA	3.6 V	2.3 V	2.5 V	Synchronous	2.5, 3.3 V	Industrial grade	-40 to 85 °C	GS832272C		No	3A991.B.2.B					FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY	8542.32.00.41	SRAMs	CMOS	BOTTOM	BALL	NOT SPECIFIED	1	1 mm	compliant	209	R-PBGA-B209	Not Qualified	2.7 V	2.5/3.3 V		INDUSTRIAL	2.3 V		36 Mbit	8	SYNCHRONOUS	0.255 mA	8.5 ns	Flow-Through/Pipelined	512KX72	3-STATE	1.7 mm	72	19 Bit	36 Mbit	0.08 A	37748736 bit	Industrial	PARALLEL	COMMON	CACHE SRAM	2.38 V							22 mm	14 mm
	Mfr Part No MT48LC32M16A2TG-75IT	Micron	Datasheet	5 In Stock	-	Min: 1 Mult: 1				YES	54	5.4 ns	133 MHz		MICRON TECHNOLOGY INC		Micron Technology Inc	MT48LC32M16A2TG-75IT								3				33554432 words	32000000	85 °C	-40 °C	PLASTIC/EPOXY	TSOP2	0.400 INCH, PLASTIC, TSOP2-54	TSOP54,.46,32	RECTANGULAR	SMALL OUTLINE, THIN PROFILE	Obsolete	TSOP2	30	5.84		No				3.3 V						e0	No	EAR99	Tin/Lead (Sn/Pb)				AUTO/SELF REFRESH	8542.32.00.28	DRAMs	CMOS	DUAL	GULL WING	235	1	0.8 mm	unknown	54	R-PDSO-G54	Not Qualified	3.6 V	3.3 V		INDUSTRIAL	3 V			1	SYNCHRONOUS	0.255 mA			32MX16	3-STATE	1.2 mm	16			0.0035 A	536870912 bit			COMMON	SYNCHRONOUS DRAM			8192	1,2,4,8,FP	1,2,4,8	FOUR BANK PAGE BURST	YES	22.22 mm	10.16 mm