The category is 'Memory'
Memory (18)
- All Manufacturers
- Access Time-Max
- I/O Type
- Ihs Manufacturer
- JESD-30 Code
- Memory Density
- Memory IC Type
- Memory Width
- Number of Terminals
- Number of Words
- Number of Words Code
- Output Characteristics
- Supply Current-Max
- Supply Current-Max:
0.26 mA
Image | Part Number | Manufacturer | Datasheet | Availability | Pricing(USD) | Quantity | RoHS | Factory Lead Time | Mount | Package / Case | Surface Mount | Number of Pins | Number of Terminals | Access Time-Max | Clock Frequency-Max (fCLK) | Data Rate Architecture | Ihs Manufacturer | Interface Type | Manufacturer | Manufacturer Part Number | Maximum Clock Frequency | Maximum Clock Rate | Maximum Operating Supply Voltage | Maximum Operating Temperature | Minimum Operating Supply Voltage | Minimum Operating Temperature | Moisture Sensitivity Levels | Mounting | Mounting Styles | Number of I/O Lines | Number of Words | Number of Words Code | Operating Temperature-Max | Operating Temperature-Min | Package Body Material | Package Code | Package Description | Package Equivalence Code | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Reflow Temperature-Max (s) | Risk Rank | RoHS | Rohs Code | Supplier Package | Supply Voltage-Max | Supply Voltage-Min | Supply Voltage-Nom (Vsup) | Timing Type | Typical Operating Supply Voltage | Usage Level | Operating Temperature | Series | JESD-609 Code | Pbfree Code | ECCN Code | Terminal Finish | Max Operating Temperature | Min Operating Temperature | Additional Feature | HTS Code | Subcategory | Technology | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Terminal Pitch | Reach Compliance Code | Time@Peak Reflow Temperature-Max (s) | Pin Count | JESD-30 Code | Qualification Status | Operating Supply Voltage | Supply Voltage-Max (Vsup) | Power Supplies | Temperature Grade | Supply Voltage-Min (Vsup) | Max Supply Voltage | Min Supply Voltage | Memory Size | Number of Ports | Nominal Supply Current | Operating Mode | Supply Current-Max | Access Time | Architecture | Data Bus Width | Organization | Output Characteristics | Seated Height-Max | Memory Width | Address Bus Width | Density | Standby Current-Max | Memory Density | Max Frequency | Screening Level | Parallel/Serial | I/O Type | Memory IC Type | Standby Voltage-Min | Output Enable | Refresh Cycles | Sequential Burst Length | Interleaved Burst Length | Access Mode | Self Refresh | Length | Width | Radiation Hardening | Lead Free |
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 | Mfr Part No CY7C1062AV33-12BGI | Cypress Semiconductor | Datasheet | - | - | Min: 1 Mult: 1 | YES | 119 | 12 ns | CYPRESS SEMICONDUCTOR CORP | Cypress Semiconductor | CY7C1062AV33-12BGI | 3 | 524288 words | 512000 | 85 °C | -40 °C | PLASTIC/EPOXY | BGA | 14 X 22 MM, 2.40 MM HEIGHT, PLASTIC, BGA-119 | BGA119,7X17,50 | RECTANGULAR | GRID ARRAY | Obsolete | BGA | NOT SPECIFIED | 5.54 | No | 3.3 V | e0 | 3A991.B.2.A | Tin/Lead (Sn/Pb) | 8542.32.00.41 | SRAMs | CMOS | BOTTOM | BALL | 220 | 1 | 1.27 mm | not_compliant | 119 | R-PBGA-B119 | Not Qualified | 3.6 V | 3.3 V | INDUSTRIAL | 3 V | ASYNCHRONOUS | 0.26 mA | 512KX32 | 3-STATE | 2.4 mm | 32 | 0.05 A | 16777216 bit | PARALLEL | COMMON | STANDARD SRAM | 3 V | 22 mm | 14 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No MT47H32M8BP-3:B | Micron | Datasheet | - | - | Min: 1 Mult: 1 | Surface Mount | YES | 60 | 60 | 0.45 ns | 333 MHz | MICRON TECHNOLOGY INC | Micron Technology Inc | MT47H32M8BP-3:B | 33554432 words | 32000000 | 85 °C | PLASTIC/EPOXY | TFBGA | TFBGA, BGA60,9X11,32 | BGA60,9X11,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | BGA | 30 | 8.5 | Compliant | Yes | 1.8 V | e1 | Yes | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | 85 °C | 0 °C | AUTO/SELF REFRESH | 8542.32.00.24 | DRAMs | CMOS | BOTTOM | BALL | 260 | 1 | 0.8 mm | unknown | 60 | R-PBGA-B60 | Not Qualified | 1.8 V | 1.9 V | 1.8 V | OTHER | 1.7 V | 1.9 V | 1.7 V | 1 | 190 mA | SYNCHRONOUS | 0.26 mA | 450 ps | 8 b | 32MX8 | 3-STATE | 1.2 mm | 8 | 15 b | 256 Mb | 0.005 A | 268435456 bit | 667 MHz | COMMON | DDR DRAM | 8192 | 4,8 | 4,8 | FOUR BANK PAGE BURST | YES | 12 mm | 8 mm | No | Lead Free | |||||||||||||||||||||||||||||||
| Mfr Part No IS61LF102436B-6.5TQL | ISSI | Datasheet | - | - | Min: 1 Mult: 1 | YES | 100 | 6.5 ns | 133 MHz | INTEGRATED SILICON SOLUTION INC | Miscellaneous | IS61LF102436B-6.5TQL | 1048576 words | 1000000 | 70 °C | PLASTIC/EPOXY | LQFP | LQFP, QFP100,.63X.87 | QFP100,.63X.87 | RECTANGULAR | FLATPACK, LOW PROFILE | Active | QFP | 5.74 | Yes | 3.3 V | 3A991.B.2.A | 8542.32.00.41 | SRAMs | CMOS | QUAD | GULL WING | 1 | 0.65 mm | compliant | 100 | R-PQFP-G100 | Not Qualified | 3.465 V | 2.5/3.3,3.3 V | COMMERCIAL | 3.135 V | SYNCHRONOUS | 0.26 mA | 1MX36 | 3-STATE | 1.6 mm | 36 | 0.115 A | 37748736 bit | PARALLEL | COMMON | CACHE SRAM | 3.14 V | 20 mm | 14 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr Part No IS61VPS12832EC-250B3LI | Integrated Silicon Solution Inc | Datasheet | - | - | Min: 1 Mult: 1 | YES | 165 | 2.6 ns | 250 MHz | INTEGRATED SILICON SOLUTION INC | 3 | 131072 words | 128000 | 85 °C | -40 °C | PLASTIC/EPOXY | TBGA | TBGA, BGA165,11X15,40 | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, THIN PROFILE | Active | BGA | Yes | 2.5 V | e1 | 3A991.B.2.A | Tin/Silver/Copper (Sn/Ag/Cu) | 8542.32.00.41 | BOTTOM | BALL | 260 | 1 | 1 mm | compliant | 10 | 165 | R-PBGA-B165 | Not Qualified | 2.625 V | INDUSTRIAL | 2.375 V | SYNCHRONOUS | 0.26 mA | 128KX32 | 3-STATE | 1.2 mm | 32 | 0.085 A | 4194304 bit | PARALLEL | COMMON | CACHE SRAM | 2.37 V | 15 mm | 13 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No IS41C16256-25KI | Integrated Circuit Solution Inc | Datasheet | - | - | Min: 1 Mult: 1 | YES | 40 | 25 ns | INTEGRATED CIRCUIT SOLUTION INC | 262144 words | 256000 | 85 °C | -40 °C | PLASTIC/EPOXY | SOJ | SOJ, SOJ40,.44 | SOJ40,.44 | RECTANGULAR | SMALL OUTLINE | Transferred | No | 5 V | e0 | EAR99 | Tin/Lead (Sn/Pb) | 8542.32.00.02 | DUAL | J BEND | 1.27 mm | unknown | R-PDSO-J40 | Not Qualified | INDUSTRIAL | 0.26 mA | 256KX16 | 3-STATE | 16 | 0.001 A | 4194304 bit | COMMON | EDO DRAM | 512 | NO | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr Part No HY57V643220DLTP-55I | SK Hynix Inc | Datasheet | - | - | Min: 1 Mult: 1 | YES | 86 | 5 ns | 183 MHz | SK HYNIX INC | 2097152 words | 2000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TSOP2 | TSOP2, TSSOP86,.46,20 | TSSOP86,.46,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | TSOP2 | Yes | 3.3 V | e6 | EAR99 | TIN BISMUTH | AUTO/SELF REFRESH | 8542.32.00.02 | DUAL | GULL WING | 1 | 0.5 mm | compliant | 86 | R-PDSO-G86 | Not Qualified | 3.6 V | INDUSTRIAL | 3 V | 1 | SYNCHRONOUS | 0.26 mA | 2MX32 | 3-STATE | 1.194 mm | 32 | 0.002 A | 67108864 bit | COMMON | SYNCHRONOUS DRAM | 4096 | 1,2,4,8,FP | 1,2,4,8 | FOUR BANK PAGE BURST | YES | 22.238 mm | 10.16 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No SCB25D1G160AF-5BI | Xi'an UniIC Semiconductors Co Ltd | Datasheet | - | - | Min: 1 Mult: 1 | YES | 60 | 0.7 ns | 200 MHz | XIAN UNILC SEMICONDUCTORS CO LTD | 67108864 words | 64000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TFBGA | TFBGA, BGA60,9X12,40/32 | BGA60,9X12,40/32 | RECTANGULAR | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | Contact Manufacturer | 2.5 V | EAR99 | 8542.32.00.32 | BOTTOM | BALL | 1 | 1 mm | unknown | R-PBGA-B60 | 2.7 V | INDUSTRIAL | 2.3 V | 1 | SYNCHRONOUS | 0.26 mA | 64MX16 | 3-STATE | 1.2 mm | 16 | 0.012 A | 1073741824 bit | COMMON | DDR1 DRAM | 2.3 V | 8192 | 2,4,8 | 2,4,8 | DUAL BANK PAGE BURST | YES | 12 mm | 10 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No MCM69P618ATQ6 | Freescale Semiconductor | Datasheet | - | - | Min: 1 Mult: 1 | YES | 100 | 6 ns | MOTOROLA SEMICONDUCTOR PRODUCTS | 65536 words | 64000 | PLASTIC/EPOXY | QFP | QFP, QFP100,.63X.87 | QFP100,.63X.87 | RECTANGULAR | FLATPACK | Obsolete | No | 3.3 V | e0 | Tin/Lead (Sn/Pb) | QUAD | GULL WING | 0.635 mm | unknown | R-PQFP-G100 | Not Qualified | 3.3 V | SYNCHRONOUS | 0.26 mA | 64KX18 | 3-STATE | 18 | 0.04 A | 1179648 bit | PARALLEL | COMMON | STANDARD SRAM | 3.14 V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr Part No H5DU5162EFR-E3I | SK Hynix Inc | Datasheet | - | - | Min: 1 Mult: 1 | YES | 60 | 0.7 ns | 200 MHz | SK HYNIX INC | 33554432 words | 32000000 | 85 °C | -40 °C | PLASTIC/EPOXY | VBGA | VBGA, BGA60,9X12,40/32 | BGA60,9X12,40/32 | RECTANGULAR | GRID ARRAY, VERY THIN PROFILE | Obsolete | BGA | Yes | 2.5 V | e1 | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | AUTO/SELF REFRESH | 8542.32.00.28 | BOTTOM | BALL | 260 | 1 | 1 mm | unknown | 20 | 60 | R-PBGA-B60 | Not Qualified | 2.7 V | INDUSTRIAL | 2.3 V | 1 | SYNCHRONOUS | 0.26 mA | 32MX16 | 3-STATE | 1 mm | 16 | 0.005 A | 536870912 bit | COMMON | DDR1 DRAM | 8192 | 2,4,8 | 2,4,8 | FOUR BANK PAGE BURST | YES | 12 mm | 8 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr Part No CY7B135-25JI | Cypress Semiconductor | Datasheet | - | - | Min: 1 Mult: 1 | YES | 52 | 25 ns | CYPRESS SEMICONDUCTOR CORP | 1 | 4096 words | 4000 | 85 °C | -40 °C | PLASTIC/EPOXY | QCCJ | PLASTIC, LCC-52 | LDCC52,.8SQ | SQUARE | CHIP CARRIER | Obsolete | LCC | No | 5 V | e0 | EAR99 | TIN LEAD | AUTOMATIC POWER-DOWN | 8542.32.00.41 | QUAD | J BEND | 1 | 1.27 mm | not_compliant | 52 | S-PQCC-J52 | Not Qualified | 5.5 V | INDUSTRIAL | 4.5 V | 2 | ASYNCHRONOUS | 0.26 mA | 4KX8 | 3-STATE | 5.08 mm | 8 | 32768 bit | PARALLEL | COMMON | MULTI-PORT SRAM | YES | 19.1262 mm | 19.1262 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No SCB25D1G160AE-5BI | Xi'an UniIC Semiconductors Co Ltd | Datasheet | - | - | Min: 1 Mult: 1 | YES | 66 | 0.7 ns | 200 MHz | XIAN UNILC SEMICONDUCTORS CO LTD | 67108864 words | 64000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TSOP2 | TSOP2, TSSOP66,.46 | TSSOP66,.46 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Contact Manufacturer | 2.5 V | EAR99 | 8542.32.00.32 | DUAL | GULL WING | 1 | 0.65 mm | unknown | R-PDSO-G66 | 2.7 V | INDUSTRIAL | 2.3 V | 1 | SYNCHRONOUS | 0.26 mA | 64MX16 | 3-STATE | 1.2 mm | 16 | 0.012 A | 1073741824 bit | COMMON | DDR1 DRAM | 2.3 V | 8192 | 2,4,8 | 2,4,8 | DUAL BANK PAGE BURST | YES | 22.22 mm | 11.76 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr Part No IS61LV25616-8T | Integrated Silicon Solution Inc | Datasheet | - | - | Min: 1 Mult: 1 | YES | 44 | 8 ns | INTEGRATED SILICON SOLUTION INC | 262144 words | 256000 | 70 °C | PLASTIC/EPOXY | TSOP2 | TSOP2-44 | TSOP44,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | TSOP2 | No | 3.3 V | e0 | 3A991.B.2.A | Tin/Lead (Sn/Pb) | 8542.32.00.41 | DUAL | GULL WING | 1 | 0.8 mm | compliant | 44 | R-PDSO-G44 | Not Qualified | 3.63 V | COMMERCIAL | 3.135 V | ASYNCHRONOUS | 0.26 mA | 256KX16 | 3-STATE | 1.2 mm | 16 | 0.01 A | 4194304 bit | PARALLEL | COMMON | STANDARD SRAM | 3.14 V | 18.41 mm | 10.16 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr Part No IS61LV25616-8T | Integrated Silicon Solution Inc | Datasheet | - | - | Min: 1 Mult: 1 | YES | 44 | 8 ns | INTEGRATED SILICON SOLUTION INC | 262144 words | 256000 | 70 °C | PLASTIC/EPOXY | TSOP2 | TSOP2-44 | TSOP44,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | TSOP2 | No | 3.3 V | e0 | 3A991.B.2.A | Tin/Lead (Sn/Pb) | 8542.32.00.41 | DUAL | GULL WING | 1 | 0.8 mm | compliant | 44 | R-PDSO-G44 | Not Qualified | 3.63 V | COMMERCIAL | 3.135 V | ASYNCHRONOUS | 0.26 mA | 256KX16 | 3-STATE | 1.2 mm | 16 | 0.01 A | 4194304 bit | PARALLEL | COMMON | STANDARD SRAM | 3.14 V | 18.41 mm | 10.16 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No IS41C16256-25KI | Integrated Silicon Solution Inc | Datasheet | - | - | Min: 1 Mult: 1 | YES | 40 | 25 ns | INTEGRATED SILICON SOLUTION INC | 262144 words | 256000 | 85 °C | -40 °C | PLASTIC/EPOXY | SOJ | SOJ, SOJ40,.44 | SOJ40,.44 | RECTANGULAR | SMALL OUTLINE | Active | No | 5 V | e0 | EAR99 | Tin/Lead (Sn/Pb) | 8542.32.00.02 | DUAL | J BEND | 1.27 mm | compliant | R-PDSO-J40 | Not Qualified | INDUSTRIAL | 0.26 mA | 256KX16 | 3-STATE | 16 | 0.001 A | 4194304 bit | COMMON | EDO DRAM | 512 | NO | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No IC61LV5128-12K | Integrated Silicon Solution Inc | Datasheet | - | - | Min: 1 Mult: 1 | YES | 36 | 12 ns | INTEGRATED SILICON SOLUTION INC | 524288 words | 512000 | 70 °C | PLASTIC/EPOXY | SOJ | 0.400 INCH, SOJ-36 | SOJ36,.44 | RECTANGULAR | SMALL OUTLINE | Obsolete | No | 3.3 V | e0 | 3A991.B.2.A | Tin/Lead (Sn/Pb) | 8542.32.00.41 | DUAL | J BEND | 1 | 1.27 mm | compliant | R-PDSO-J36 | Not Qualified | 3.63 V | COMMERCIAL | 2.97 V | ASYNCHRONOUS | 0.26 mA | 512KX8 | 3-STATE | 8 | 0.01 A | 4194304 bit | PARALLEL | COMMON | STANDARD SRAM | 3 V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No IC61LV5128-12K | Integrated Circuit Solution Inc | Datasheet | - | - | Min: 1 Mult: 1 | YES | 36 | 12 ns | INTEGRATED CIRCUIT SOLUTION INC | 524288 words | 512000 | 70 °C | PLASTIC/EPOXY | SOJ | SOJ, SOJ36,.44 | SOJ36,.44 | RECTANGULAR | SMALL OUTLINE | Transferred | No | 3.3 V | e0 | 3A991.B.2.A | Tin/Lead (Sn/Pb) | 8542.32.00.41 | DUAL | J BEND | 1.27 mm | unknown | R-PDSO-J36 | Not Qualified | COMMERCIAL | ASYNCHRONOUS | 0.26 mA | 512KX8 | 3-STATE | 8 | 0.01 A | 4194304 bit | PARALLEL | COMMON | STANDARD SRAM | 3 V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No IS61NVP204836B-200B2LI | Integrated Silicon Solution Inc | Datasheet | - | - | Min: 1 Mult: 1 | YES | 119 | 3.1 ns | 200 MHz | INTEGRATED SILICON SOLUTION INC | 3 | 2097152 words | 2000000 | 85 °C | -40 °C | PLASTIC/EPOXY | BGA | BGA, BGA119,7X17,50 | BGA119,7X17,50 | RECTANGULAR | GRID ARRAY | Active | BGA | Yes | 2.5 V | e1 | 3A991.B.2.A | Tin/Silver/Copper (Sn/Ag/Cu) | 8542.32.00.41 | BOTTOM | BALL | 260 | 1 | 1.27 mm | compliant | 10 | 119 | R-PBGA-B119 | Not Qualified | 2.625 V | INDUSTRIAL | 2.375 V | SYNCHRONOUS | 0.26 mA | 2MX36 | 3-STATE | 3.5 mm | 36 | 75497472 bit | PARALLEL | COMMON | ZBT SRAM | 2.38 V | 22 mm | 14 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No GS8321E36AD-250 | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 8 Weeks | BGA-165 | YES | 165 | 5.5 ns | 250 MHz | SDR | GSI TECHNOLOGY | Parallel | GSI Technology | GS8321E36AD-250 | 250 MHz | 181.8@Flow-Through/250@Pipelined MHz | 2.7, 3.6 V | + 70 C | 2.3, 3 V | 0 C | Surface Mount | SMD/SMT | 36 Bit | 1 MWords | 1000000 | 85 °C | PLASTIC/EPOXY | LBGA | LBGA, BGA165,11X15,40 | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | Active | BGA | NOT SPECIFIED | 4.95 | No | FBGA | 3.6 V | 2.3 V | 2.5 V | Synchronous | 2.5, 3.3 V | Commercial grade | 0 to 85 °C | GS8321E36AD | e0 | No | 3A991.B.2.B | TIN LEAD | IT ALSO OPERATES AT 3 V TO 3.6 V SUPPLY VOLTAGE | SRAMs | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 1 mm | compliant | 165 | R-PBGA-B165 | Not Qualified | 2.7 V | 2.5/3.3 V | OTHER | 2.3 V | 36 Mbit | 4 | SYNCHRONOUS | 0.26 mA | 5.5 ns | Flow-Through/Pipelined | 1MX36 | 3-STATE | 1.4 mm | 36 | 20 Bit | 36 Mbit | 0.03 A | 37748736 bit | Commercial | PARALLEL | COMMON | CACHE SRAM | 2.3 V | 15 mm | 13 mm |
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CY7C1062AV33-12BGI
Cypress Semiconductor
Package:Memory
Price: please inquire
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MT47H32M8BP-3:B
Micron
Package:Memory
Price: please inquire
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IS61LF102436B-6.5TQL
ISSI
Package:Memory
Price: please inquire
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IS61VPS12832EC-250B3LI
Integrated Silicon Solution Inc
Package:Memory
Price: please inquire
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IS41C16256-25KI
Integrated Circuit Solution Inc
Package:Memory
Price: please inquire
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HY57V643220DLTP-55I
SK Hynix Inc
Package:Memory
Price: please inquire
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SCB25D1G160AF-5BI
Xi'an UniIC Semiconductors Co Ltd
Package:Memory
Price: please inquire
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MCM69P618ATQ6
Freescale Semiconductor
Package:Memory
Price: please inquire
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H5DU5162EFR-E3I
SK Hynix Inc
Package:Memory
Price: please inquire
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CY7B135-25JI
Cypress Semiconductor
Package:Memory
Price: please inquire
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SCB25D1G160AE-5BI
Xi'an UniIC Semiconductors Co Ltd
Package:Memory
Price: please inquire
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IS61LV25616-8T
Integrated Silicon Solution Inc
Package:Memory
Price: please inquire
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IS61LV25616-8T
Integrated Silicon Solution Inc
Package:Memory
Price: please inquire
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IS41C16256-25KI
Integrated Silicon Solution Inc
Package:Memory
Price: please inquire
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IC61LV5128-12K
Integrated Silicon Solution Inc
Package:Memory
Price: please inquire
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IC61LV5128-12K
Integrated Circuit Solution Inc
Package:Memory
Price: please inquire
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IS61NVP204836B-200B2LI
Integrated Silicon Solution Inc
Package:Memory
Price: please inquire
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GS8321E36AD-250
GSI Technology
Package:Memory
Price: please inquire