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The category is 'Memory'

Memory (31)

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Access Time-Max
I/O Type
Ihs Manufacturer
JESD-30 Code
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Supply Current-Max

Supply Current-Max:
0.27 mA

Image	Part Number	Manufacturer	Datasheet	Availability	Pricing(USD)	Quantity	RoHS	Factory Lead Time	Mount	Mounting Type	Package / Case	Surface Mount	Number of Pins	Supplier Device Package	Number of Terminals	Access Time-Max	Base Product Number	Clock Frequency-Max (fCLK)	Data Rate Architecture	Ihs Manufacturer	Manufacturer	Manufacturer Part Number	Maximum Clock Rate	Maximum Operating Supply Voltage	Memory Types	Mfr	Minimum Operating Supply Voltage	Moisture Sensitivity Levels	Mounting	Number of I/O Lines	Number of Words	Number of Words Code	Operating Temperature-Max	Operating Temperature-Min	Package	Package Body Material	Package Code	Package Description	Package Equivalence Code	Package Shape	Package Style	Part Life Cycle Code	Part Package Code	Product Status	Reflow Temperature-Max (s)	Risk Rank	RoHS	Rohs Code	Supplier Package	Supply Voltage-Nom (Vsup)	Timing Type	Typical Operating Supply Voltage	Usage Level	Operating Temperature	Packaging	Series	JESD-609 Code	Pbfree Code	ECCN Code	Terminal Finish	Max Operating Temperature	Min Operating Temperature	Additional Feature	HTS Code	Subcategory	Technology	Voltage - Supply	Terminal Position	Terminal Form	Peak Reflow Temperature (Cel)	Number of Functions	Terminal Pitch	Reach Compliance Code	Frequency	Pin Count	JESD-30 Code	Qualification Status	Operating Supply Voltage	Supply Voltage-Max (Vsup)	Power Supplies	Temperature Grade	Supply Voltage-Min (Vsup)	Max Supply Voltage	Min Supply Voltage	Memory Size	Number of Ports	Nominal Supply Current	Operating Mode	Clock Frequency	Supply Current-Max	Access Time	Memory Format	Memory Interface	Architecture	Data Bus Width	Organization	Output Characteristics	Seated Height-Max	Memory Width	Write Cycle Time - Word, Page	Address Bus Width	Density	Standby Current-Max	Memory Density	Max Frequency	Screening Level	Parallel/Serial	I/O Type	Memory IC Type	Standby Voltage-Min	Refresh Cycles	Sequential Burst Length	Interleaved Burst Length	Access Mode	Self Refresh	Memory Organization	Length	Width	Radiation Hardening	Lead Free
	Mfr Part No MT46V16M16CV-6:K	Micron	Datasheet	-	-	Min: 1 Mult: 1						YES			60	0.7 ns		167 MHz		MICRON TECHNOLOGY INC	Micron Technology Inc	MT46V16M16CV-6:K									16777216 words	16000000	70 °C			PLASTIC/EPOXY	TBGA	(8 X 12.5) MM, PLASTIC, FBGA-60	BGA60,9X12,40/32	RECTANGULAR	GRID ARRAY, THIN PROFILE	Obsolete	BGA		30	5.44		No		2.5 V							e0	No	EAR99	Tin/Lead/Silver (Sn/Pb/Ag)			AUTO/SELF REFRESH	8542.32.00.24	DRAMs	CMOS		BOTTOM	BALL	235	1	1 mm	unknown		60	R-PBGA-B60	Not Qualified		2.7 V	2.5 V	COMMERCIAL	2.3 V				1		SYNCHRONOUS		0.27 mA						16MX16	3-STATE	1.2 mm	16				0.004 A	268435456 bit				COMMON	DDR DRAM		8192	2,4,8	2,4,8	FOUR BANK PAGE BURST	YES		12.5 mm	8 mm
	Mfr Part No MT47H128M8HV-37E:E	Micron	Datasheet	-	-	Min: 1 Mult: 1						YES			60	0.5 ns		267 MHz		MICRON TECHNOLOGY INC	Micron Technology Inc	MT47H128M8HV-37E:E									134217728 words	128000000	85 °C	-40 °C		PLASTIC/EPOXY	TFBGA	8 X 11.50 MM, FBGA-60	BGA60,9X11,32	RECTANGULAR	GRID ARRAY, THIN PROFILE, FINE PITCH	Obsolete	BGA		30	5.61		No		1.8 V							e0		EAR99	Tin/Lead/Silver (Sn/Pb/Ag)			AUTO/SELF REFRESH	8542.32.00.32	DRAMs	CMOS		BOTTOM	BALL	235	1	0.8 mm	unknown		60	R-PBGA-B60	Not Qualified		1.9 V	1.8 V	INDUSTRIAL	1.7 V				1		SYNCHRONOUS		0.27 mA						128MX8	3-STATE	1.2 mm	8					1073741824 bit				COMMON	DDR DRAM		8192	4,8	4,8	MULTI BANK PAGE BURST	YES		11.5 mm	8 mm
	Mfr Part No MT46V16M16P-6T:K	Micron	Datasheet	-	-	Min: 1 Mult: 1						YES			66	0.7 ns		167 MHz		MICRON TECHNOLOGY INC	Micron Technology Inc	MT46V16M16P-6T:K						3			16777216 words	16000000	70 °C			PLASTIC/EPOXY	TSSOP	TSSOP, TSSOP66,.46	TSSOP66,.46	RECTANGULAR	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	Obsolete	TSOP		30	5.58		Yes		2.6 V							e3	Yes	EAR99	Matte Tin (Sn)			AUTO/SELF REFRESH	8542.32.00.24	DRAMs	CMOS		DUAL	GULL WING	260	1	0.65 mm	compliant		66	R-PDSO-G66	Not Qualified		2.7 V	2.5 V	COMMERCIAL	2.5 V				1		SYNCHRONOUS		0.27 mA						16MX16	3-STATE	1.2 mm	16				0.004 A	268435456 bit				COMMON	DDR DRAM		8192	2,4,8	2,4,8	FOUR BANK PAGE BURST	YES		22.22 mm	10.16 mm
	Mfr Part No MT48LC32M8A2TG-75:D	Micron	Datasheet	-	-	Min: 1 Mult: 1						YES			54	5.4 ns		133 MHz		MICRON TECHNOLOGY INC	Micron Technology Inc	MT48LC32M8A2TG-75:D									33554432 words	32000000	70 °C			PLASTIC/EPOXY	TSOP2	0.400 INCH, PLASTIC, TSOP2-54	TSOP54,.46,32	RECTANGULAR	SMALL OUTLINE, THIN PROFILE	Obsolete	TSOP2		30	8.59		No		3.3 V							e0	No	EAR99	Tin/Lead (Sn/Pb)			AUTO/SELF REFRESH	8542.32.00.24	DRAMs	CMOS		DUAL	GULL WING	235	1	0.8 mm	unknown		54	R-PDSO-G54	Not Qualified		3.6 V	3.3 V	COMMERCIAL	3 V				1		SYNCHRONOUS		0.27 mA						32MX8	3-STATE	1.2 mm	8				0.002 A	268435456 bit				COMMON	SYNCHRONOUS DRAM		8192	1,2,4,8,FP	1,2,4,8	FOUR BANK PAGE BURST	YES		22.22 mm	10.16 mm
	Mfr Part No MT48LC64M4A2BB-75:D	Micron	Datasheet	-	-	Min: 1 Mult: 1						YES			60	5.4 ns		133 MHz		MICRON TECHNOLOGY INC	Micron Technology Inc	MT48LC64M4A2BB-75:D									67108864 words	64000000	70 °C			PLASTIC/EPOXY	TFBGA	TFBGA, BGA60,8X15,32	BGA60,8X15,32	RECTANGULAR	GRID ARRAY, THIN PROFILE, FINE PITCH	Obsolete	BGA		30	5.61	Compliant	Yes		3.3 V					Bulk		e1		EAR99	Tin/Silver/Copper (Sn/Ag/Cu)	70 °C	0 °C	AUTO/SELF REFRESH	8542.32.00.24	DRAMs	CMOS		BOTTOM	BALL	260	1	0.8 mm	unknown	133 MHz	60	R-PBGA-B60	Not Qualified	3.3 V	3.6 V	3.3 V	COMMERCIAL	3 V			244.1 MB	1		SYNCHRONOUS		0.27 mA	133 µs				4 b	64MX4	3-STATE	1.2 mm	4		15 b	256 Mb	0.002 A	268435456 bit	133 MHz			COMMON	SYNCHRONOUS DRAM		8192	1,2,4,8,FP	1,2,4,8	FOUR BANK PAGE BURST	YES		16 mm	8 mm	No	Lead Free
	Mfr Part No MT46V16M16TG-6TIT:K	Micron	Datasheet	-	-	Min: 1 Mult: 1						YES			66	0.7 ns		167 MHz		MICRON TECHNOLOGY INC	Micron Technology Inc	MT46V16M16TG-6TIT:K									16777216 words	16000000	85 °C	-40 °C		PLASTIC/EPOXY	TSSOP	0.40 INCH, PLASTIC, TSOP-66	TSSOP66,.46	RECTANGULAR	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	Obsolete	TSOP		30	5.64		No		2.6 V							e0	No	EAR99	Tin/Lead (Sn/Pb)			AUTO/SELF REFRESH	8542.32.00.24	DRAMs	CMOS		DUAL	GULL WING	235	1	0.65 mm	unknown		66	R-PDSO-G66	Not Qualified		2.7 V	2.5 V	INDUSTRIAL	2.5 V				1		SYNCHRONOUS		0.27 mA						16MX16	3-STATE	1.2 mm	16				0.004 A	268435456 bit				COMMON	DDR DRAM		8192	2,4,8	2,4,8	FOUR BANK PAGE BURST	YES		22.22 mm	10.16 mm
	Mfr Part No MT47H128M8HQ-37E:E	Micron	Datasheet	-	-	Min: 1 Mult: 1						YES			60	0.5 ns		267 MHz		MICRON TECHNOLOGY INC	Micron Technology Inc	MT47H128M8HQ-37E:E									134217728 words	128000000	85 °C	-40 °C		PLASTIC/EPOXY	TFBGA	TFBGA, BGA60,9X11,32	BGA60,9X11,32	RECTANGULAR	GRID ARRAY, THIN PROFILE, FINE PITCH	Obsolete	BGA		30	8.37		Yes		1.8 V							e1		EAR99	Tin/Silver/Copper (Sn/Ag/Cu)			AUTO/SELF REFRESH	8542.32.00.32	DRAMs	CMOS		BOTTOM	BALL	260	1	0.8 mm	not_compliant		60	R-PBGA-B60	Not Qualified		1.9 V	1.8 V	INDUSTRIAL	1.7 V				1		SYNCHRONOUS		0.27 mA						128MX8	3-STATE	1.2 mm	8					1073741824 bit				COMMON	DDR DRAM		8192	4,8	4,8	MULTI BANK PAGE BURST	YES		11.5 mm	8 mm
	Mfr Part No MT47H256M4HQ-37E:E	Micron	Datasheet	-	-	Min: 1 Mult: 1						YES			60	0.5 ns		267 MHz		MICRON TECHNOLOGY INC	Micron Technology Inc	MT47H256M4HQ-37E:E									268435456 words	256000000	85 °C	-40 °C		PLASTIC/EPOXY	TFBGA	TFBGA, BGA60,9X11,32	BGA60,9X11,32	RECTANGULAR	GRID ARRAY, THIN PROFILE, FINE PITCH	Obsolete	BGA		30	5.59		Yes		1.8 V							e1		EAR99	Tin/Silver/Copper (Sn/Ag/Cu)			AUTO/SELF REFRESH	8542.32.00.32	DRAMs	CMOS		BOTTOM	BALL	260	1	0.8 mm	not_compliant		60	R-PBGA-B60	Not Qualified		1.9 V	1.8 V	INDUSTRIAL	1.7 V				1		SYNCHRONOUS		0.27 mA						256MX4	3-STATE	1.2 mm	4					1073741824 bit				COMMON	DDR DRAM		8192	4,8	4,8	MULTI BANK PAGE BURST	YES		11.5 mm	8 mm
	Mfr Part No MT48LC32M8A2FB-75L:D	Micron	Datasheet	-	-	Min: 1 Mult: 1						YES			60	5.4 ns		133 MHz		MICRON TECHNOLOGY INC	Micron Technology Inc	MT48LC32M8A2FB-75L:D									33554432 words	32000000	70 °C			PLASTIC/EPOXY	TFBGA	8 X 16 MM, FBGA-60	BGA60,8X15,32	RECTANGULAR	GRID ARRAY, THIN PROFILE, FINE PITCH	Obsolete	BGA		30	5.63		No		3.3 V							e0	No	EAR99	Tin/Lead/Silver (Sn/Pb/Ag)			AUTO/SELF REFRESH	8542.32.00.24	DRAMs	CMOS		BOTTOM	BALL	235	1	0.8 mm	unknown		60	R-PBGA-B60	Not Qualified		3.6 V	3.3 V	COMMERCIAL	3 V				1		SYNCHRONOUS		0.27 mA						32MX8	3-STATE	1.2 mm	8				0.002 A	268435456 bit				COMMON	SYNCHRONOUS DRAM		8192	1,2,4,8,FP	1,2,4,8	FOUR BANK PAGE BURST	YES		16 mm	8 mm
	Mfr Part No MT48LC64M4A2TG-75:D	Micron	Datasheet	-	-	Min: 1 Mult: 1			Surface Mount			YES	54		54	5.4 ns		133 MHz		MICRON TECHNOLOGY INC	Micron Technology Inc	MT48LC64M4A2TG-75:D									67108864 words	64000000	70 °C			PLASTIC/EPOXY	TSOP2	0.400 INCH, PLASTIC, TSOP2-54	TSOP54,.46,32	RECTANGULAR	SMALL OUTLINE, THIN PROFILE	Obsolete	TSOP2		30	5.63	Compliant	No		3.3 V							e0	No	EAR99	Tin/Lead (Sn/Pb)	70 °C	0 °C	AUTO/SELF REFRESH	8542.32.00.24	DRAMs	CMOS		DUAL	GULL WING	235	1	0.8 mm	unknown		54	R-PDSO-G54	Not Qualified	3.3 V	3.6 V	3.3 V	COMMERCIAL	3 V	3.6 V	3 V		1	135 mA	SYNCHRONOUS		0.27 mA					4 b	64MX4	3-STATE	1.2 mm	4		15 b	256 Mb	0.002 A	268435456 bit	133 MHz			COMMON	SYNCHRONOUS DRAM		8192	1,2,4,8,FP	1,2,4,8	FOUR BANK PAGE BURST	YES		22.22 mm	10.16 mm	No
	Mfr Part No GS8320Z36AGT-250I	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		8 Weeks		Surface Mount	100-LQFP	YES		100-TQFP (20x14)	100	5.5 ns	GS8320Z	250 MHz	SDR	GSI TECHNOLOGY	GSI Technology	GS8320Z36AGT-250I	181.8@Flow-Through/250@Pipelined MHz	2.7, 3.6 V	Volatile	GSI Technology Inc.	2.3, 3 V		Surface Mount	36 Bit	1 MWords	1000000	85 °C	-40 °C	Tray	PLASTIC/EPOXY	LQFP	LQFP, QFP100,.63X.87	QFP100,.63X.87	RECTANGULAR	FLATPACK, LOW PROFILE	Active	QFP	Active	NOT SPECIFIED	4.85	Compliant	Yes	TQFP	2.5 V	Synchronous	2.5, 3.3 V	Industrial grade	-40 to 100 °C	Bulk	-			3A991.B.2.B		100 °C	-40 °C	IT ALSO OPERATES AT 3 V TO 3.6 V SUPPLY VOLTAGE		SRAMs	SRAM - Synchronous, ZBT	2.3V ~ 2.7V, 3V ~ 3.6V	QUAD	GULL WING	NOT SPECIFIED	1	0.65 mm	compliant		100	R-PQFP-G100	Not Qualified		2.7 V	2.5/3.3 V	INDUSTRIAL	2.3 V			36Mbit	4		SYNCHRONOUS	250 MHz	0.27 mA		SRAM	Parallel	Flow-Through/Pipelined		1MX36	3-STATE	1.6 mm	36	-	20 Bit	36 Mbit	0.04 A	37748736 bit		Industrial	PARALLEL	COMMON	ZBT SRAM	2.3 V						1M x 36	20 mm	14 mm	No

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