The category is 'Memory'
Memory (18)
- All Manufacturers
- Clock Frequency-Max (fCLK)
- ECCN Code
- HTS Code
- I/O Type
- Ihs Manufacturer
- JESD-30 Code
- Memory Density
- Memory IC Type
- Memory Width
- Number of Terminals
- Number of Words Code
- Supply Current-Max
- Supply Current-Max:
0.285 mA
Image | Part Number | Manufacturer | Datasheet | Availability | Pricing(USD) | Quantity | RoHS | Factory Lead Time | Lifecycle Status | Mount | Surface Mount | Number of Pins | Number of Terminals | Access Time-Max | Clock Frequency-Max (fCLK) | Data Rate Architecture | Ihs Manufacturer | Manufacturer | Manufacturer Part Number | Maximum Clock Rate | Maximum Operating Supply Voltage | Minimum Operating Supply Voltage | Moisture Sensitivity Levels | Mounting | Number of I/O Lines | Number of Words | Number of Words Code | Operating Temperature-Max | Operating Temperature-Min | Package Body Material | Package Code | Package Description | Package Equivalence Code | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Reflow Temperature-Max (s) | Risk Rank | RoHS | Rohs Code | Supplier Package | Supply Voltage-Nom (Vsup) | Timing Type | Typical Operating Supply Voltage | Usage Level | Operating Temperature | Packaging | JESD-609 Code | Pbfree Code | ECCN Code | Terminal Finish | Max Operating Temperature | Min Operating Temperature | Additional Feature | HTS Code | Subcategory | Technology | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Terminal Pitch | Reach Compliance Code | Frequency | Time@Peak Reflow Temperature-Max (s) | Pin Count | JESD-30 Code | Qualification Status | Operating Supply Voltage | Supply Voltage-Max (Vsup) | Power Supplies | Temperature Grade | Supply Voltage-Min (Vsup) | Max Supply Voltage | Min Supply Voltage | Memory Size | Number of Ports | Nominal Supply Current | Operating Mode | Supply Current-Max | Access Time | Architecture | Data Bus Width | Organization | Output Characteristics | Seated Height-Max | Memory Width | Address Bus Width | Density | Standby Current-Max | Memory Density | Max Frequency | Screening Level | Parallel/Serial | I/O Type | Memory IC Type | Standby Voltage-Min | Refresh Cycles | Sequential Burst Length | Interleaved Burst Length | Access Mode | Self Refresh | Length | Width | Radiation Hardening | Lead Free |
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![]() | Mfr Part No MT48LC32M8A2FB-7E:D | Micron | Datasheet | 4816 | - | Min: 1 Mult: 1 | YES | 60 | 5.4 ns | 143 MHz | MICRON TECHNOLOGY INC | Micron Technology Inc | MT48LC32M8A2FB-7E:D | 33554432 words | 32000000 | 70 °C | PLASTIC/EPOXY | TFBGA | 8 X 16 MM, FBGA-60 | BGA60,8X15,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | BGA | 30 | 5.64 | No | 3.3 V | e0 | No | EAR99 | Tin/Lead/Silver (Sn/Pb/Ag) | AUTO/SELF REFRESH | 8542.32.00.24 | DRAMs | CMOS | BOTTOM | BALL | 235 | 1 | 0.8 mm | unknown | 60 | R-PBGA-B60 | Not Qualified | 3.6 V | 3.3 V | COMMERCIAL | 3 V | 1 | SYNCHRONOUS | 0.285 mA | 32MX8 | 3-STATE | 1.2 mm | 8 | 0.002 A | 268435456 bit | COMMON | SYNCHRONOUS DRAM | 8192 | 1,2,4,8,FP | 1,2,4,8 | FOUR BANK PAGE BURST | YES | 16 mm | 8 mm | ||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No W971GG6JB-18 | Winbond | Datasheet | 64 | - | Min: 1 Mult: 1 | YES | 84 | 0.35 ns | 533 MHz | WINBOND ELECTRONICS CORP | Winbond Electronics Corp | W971GG6JB-18 | 67108864 words | 64000000 | 85 °C | PLASTIC/EPOXY | TFBGA | TFBGA, BGA84,9X15,32 | BGA84,9X15,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | BGA | NOT SPECIFIED | 5.46 | Yes | 1.8 V | EAR99 | AUTO/SELF REFRESH | 8542.32.00.32 | DRAMs | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 0.8 mm | compliant | 84 | R-PBGA-B84 | Not Qualified | 1.9 V | 1.8 V | OTHER | 1.7 V | 1 | SYNCHRONOUS | 0.285 mA | 64MX16 | 3-STATE | 1.2 mm | 16 | 0.01 A | 1073741824 bit | COMMON | DDR DRAM | 8192 | 4,8 | 4,8 | MULTI BANK PAGE BURST | YES | 12.5 mm | 8 mm | |||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No MT48LC16M16A2P-7E | Micron Technology | Datasheet | 216 | - | Min: 1 Mult: 1 | YES | 54 | 5.4 ns | 143 MHz | MICRON TECHNOLOGY INC | Micron Technology Inc | MT48LC16M16A2P-7E | 16777216 words | 16000000 | 70 °C | PLASTIC/EPOXY | TSOP2 | TSOP2, TSOP54,.46,32 | TSOP54,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | TSOP2 | 30 | 5.55 | Yes | 3.3 V | e3 | Yes | EAR99 | Matte Tin (Sn) | AUTO/SELF REFRESH | 8542.32.00.24 | DRAMs | CMOS | DUAL | GULL WING | 260 | 1 | 0.8 mm | compliant | 54 | R-PDSO-G54 | Not Qualified | 3.6 V | 3.3 V | COMMERCIAL | 3 V | 1 | SYNCHRONOUS | 0.285 mA | 16MX16 | 3-STATE | 1.2 mm | 16 | 0.002 A | 268435456 bit | COMMON | SYNCHRONOUS DRAM | 8192 | 1,2,4,8,FP | 1,2,4,8 | FOUR BANK PAGE BURST | YES | 22.22 mm | 10.16 mm | ||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No IS64LPS12832EC-250TQLA3 | Integrated Silicon Solution Inc | Datasheet | - | - | Min: 1 Mult: 1 | YES | 100 | 2.6 ns | 250 MHz | INTEGRATED SILICON SOLUTION INC | 3 | 131072 words | 128000 | 125 °C | -40 °C | PLASTIC/EPOXY | LQFP | LQFP, QFP100,.63X.87 | QFP100,.63X.87 | RECTANGULAR | FLATPACK, LOW PROFILE | Active | QFP | Yes | 3.3 V | e3 | 3A991.B.2.A | Matte Tin (Sn) | 8542.32.00.41 | QUAD | GULL WING | 260 | 1 | 0.65 mm | compliant | 10 | 100 | R-PQFP-G100 | Not Qualified | 3.465 V | AUTOMOTIVE | 3.135 V | SYNCHRONOUS | 0.285 mA | 128KX32 | 3-STATE | 1.6 mm | 32 | 0.1 A | 4194304 bit | AEC-Q100 | PARALLEL | COMMON | CACHE SRAM | 3.14 V | 20 mm | 14 mm | |||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No M12L64322A-7TG | Elite Semiconductor Memory Technology Inc | Datasheet | - | - | Min: 1 Mult: 1 | YES | 86 | 6 ns | 143 MHz | ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC | 2097152 words | 2000000 | 70 °C | PLASTIC/EPOXY | TSSOP | TSSOP, TSSOP86,.46,20 | TSSOP86,.46,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | Active | TSOP2 | Yes | 3.3 V | EAR99 | AUTO/SELF REFRESH | 8542.32.00.02 | DUAL | GULL WING | 1 | 0.5 mm | unknown | 86 | R-PDSO-G86 | Not Qualified | 3.6 V | COMMERCIAL | 3 V | 1 | SYNCHRONOUS | 0.285 mA | 2MX32 | 3-STATE | 1.2 mm | 32 | 0.002 A | 67108864 bit | COMMON | SYNCHRONOUS DRAM | 2048 | 1,2,4,8,FP | 1,2,4,8 | FOUR BANK PAGE BURST | YES | 22.22 mm | 10.16 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No IS64NLP12836EC-250B3LA3 | Integrated Silicon Solution Inc | Datasheet | - | - | Min: 1 Mult: 1 | YES | 165 | 2.6 ns | 250 MHz | INTEGRATED SILICON SOLUTION INC | 3 | 131072 words | 128000 | 125 °C | -40 °C | PLASTIC/EPOXY | TBGA | TBGA, BGA165,11X15,40 | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, THIN PROFILE | Active | BGA | Yes | 3.3 V | e1 | 3A991.B.2.A | Tin/Silver/Copper (Sn/Ag/Cu) | 8542.32.00.41 | BOTTOM | BALL | 260 | 1 | 1 mm | compliant | 10 | 165 | R-PBGA-B165 | Not Qualified | 3.465 V | AUTOMOTIVE | 3.135 V | SYNCHRONOUS | 0.285 mA | 128KX36 | 3-STATE | 1.2 mm | 36 | 0.1 A | 4718592 bit | AEC-Q100 | PARALLEL | COMMON | ZBT SRAM | 3.14 V | 15 mm | 13 mm | |||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No M12L64322A-7T | Elite Semiconductor Memory Technology Inc | Datasheet | - | - | Min: 1 Mult: 1 | YES | 86 | 6 ns | 143 MHz | ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC | 2097152 words | 2000000 | 70 °C | PLASTIC/EPOXY | TSSOP | TSSOP, TSSOP86,.46,20 | TSSOP86,.46,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | Obsolete | 3.3 V | EAR99 | 8542.32.00.02 | DUAL | GULL WING | 0.5 mm | unknown | R-PDSO-G86 | Not Qualified | COMMERCIAL | 0.285 mA | 2MX32 | 3-STATE | 32 | 0.002 A | 67108864 bit | COMMON | SYNCHRONOUS DRAM | 4096 | 1,2,4,8,FP | 1,2,4,8 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No IS64VPS12832EC-250B3LA3 | Integrated Silicon Solution Inc | Datasheet | - | - | Min: 1 Mult: 1 | YES | 165 | 2.6 ns | 250 MHz | INTEGRATED SILICON SOLUTION INC | 3 | 131072 words | 128000 | 125 °C | -40 °C | PLASTIC/EPOXY | TBGA | TBGA, BGA165,11X15,40 | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, THIN PROFILE | Active | BGA | Yes | 2.5 V | e1 | 3A991.B.2.A | Tin/Silver/Copper (Sn/Ag/Cu) | 8542.32.00.41 | BOTTOM | BALL | 260 | 1 | 1 mm | compliant | 10 | 165 | R-PBGA-B165 | Not Qualified | 2.625 V | AUTOMOTIVE | 2.375 V | SYNCHRONOUS | 0.285 mA | 128KX32 | 3-STATE | 1.2 mm | 32 | 0.1 A | 4194304 bit | AEC-Q100 | PARALLEL | COMMON | CACHE SRAM | 2.37 V | 15 mm | 13 mm | |||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No IDT71V546S117PFI | Integrated Device Technology Inc | Datasheet | - | - | Min: 1 Mult: 1 | YES | 100 | 4.5 ns | 117 MHz | INTEGRATED DEVICE TECHNOLOGY INC | 3 | 131072 words | 128000 | 85 °C | -40 °C | PLASTIC/EPOXY | LQFP | 14 X 20 MM, PLASTIC, TQFP-100 | QFP100,.63X.87 | RECTANGULAR | FLATPACK, LOW PROFILE | Obsolete | QFP | No | 3.3 V | e0 | No | 3A991.B.2.A | Tin/Lead (Sn85Pb15) | 8542.32.00.41 | QUAD | GULL WING | 225 | 1 | 0.65 mm | not_compliant | 20 | 100 | R-PQFP-G100 | Not Qualified | 3.465 V | INDUSTRIAL | 3.135 V | SYNCHRONOUS | 0.285 mA | 128KX36 | 3-STATE | 1.6 mm | 36 | 0.045 A | 4718592 bit | PARALLEL | COMMON | ZBT SRAM | 3.14 V | 20 mm | 14 mm | |||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No IS64NVP12832EC-250TQLA3 | Integrated Silicon Solution Inc | Datasheet | - | - | Min: 1 Mult: 1 | YES | 100 | 2.6 ns | 250 MHz | INTEGRATED SILICON SOLUTION INC | 3 | 131072 words | 128000 | 125 °C | -40 °C | PLASTIC/EPOXY | LQFP | LQFP, QFP100,.63X.87 | QFP100,.63X.87 | RECTANGULAR | FLATPACK, LOW PROFILE | Active | QFP | Yes | 2.5 V | e3 | 3A991.B.2.A | Matte Tin (Sn) | 8542.32.00.41 | QUAD | GULL WING | 260 | 1 | 0.65 mm | compliant | 10 | 100 | R-PQFP-G100 | Not Qualified | 2.625 V | AUTOMOTIVE | 2.375 V | SYNCHRONOUS | 0.285 mA | 128KX32 | 3-STATE | 1.6 mm | 32 | 0.1 A | 4194304 bit | AEC-Q100 | PARALLEL | COMMON | ZBT SRAM | 2.37 V | 20 mm | 14 mm | |||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No IS64NLF12836EC-6.5B2LA3 | Integrated Silicon Solution Inc | Datasheet | - | - | Min: 1 Mult: 1 | YES | 119 | 6.5 ns | 133 MHz | INTEGRATED SILICON SOLUTION INC | 131072 words | 128000 | 125 °C | -40 °C | PLASTIC/EPOXY | HBGA | HBGA, BGA119,7X17,50 | BGA119,7X17,50 | RECTANGULAR | GRID ARRAY, HEAT SINK/SLUG | Active | Yes | 3.3 V | 3A991.B.2.A | 8542.32.00.41 | BOTTOM | BALL | 1 | 1.27 mm | compliant | R-PBGA-B119 | Not Qualified | 3.465 V | AUTOMOTIVE | 3.135 V | SYNCHRONOUS | 0.285 mA | 128KX36 | 3-STATE | 3.5 mm | 36 | 0.06 A | 4718592 bit | AEC-Q100 | PARALLEL | COMMON | ZBT SRAM | 3.14 V | 22 mm | 14 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No MT41J256M16RE-15E:D | Micron | Datasheet | 2400 | - | Min: 1 Mult: 1 | YES | 96 | 0.255 ns | 667 MHz | MICRON TECHNOLOGY INC | Micron Technology Inc | MT41J256M16RE-15E:D | 268435456 words | 256000000 | 85 °C | PLASTIC/EPOXY | TFBGA | TFBGA, BGA96,9X16,32 | BGA96,9X16,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | BGA | 30 | 8.47 | Yes | 1.5 V | e1 | Yes | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | AUTO/SELF REFRESH | 8542.32.00.36 | DRAMs | CMOS | BOTTOM | BALL | 260 | 1 | 0.8 mm | compliant | 96 | R-PBGA-B96 | Not Qualified | 1.575 V | 1.5 V | OTHER | 1.425 V | 1 | SYNCHRONOUS | 0.285 mA | 256MX16 | 3-STATE | 1.2 mm | 16 | 0.02 A | 4294967296 bit | COMMON | DDR DRAM | 8192 | 8 | 8 | MULTI BANK PAGE BURST | YES | 14 mm | 10 mm | ||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No MT48LC64M4A2TG-7E:D | Micron | Datasheet | 800 | - | Min: 1 Mult: 1 | Obsolete (Last Updated: 2 years ago) | Surface Mount | YES | 54 | 54 | 5.4 ns | 143 MHz | MICRON TECHNOLOGY INC | Micron Technology Inc | MT48LC64M4A2TG-7E:D | 67108864 words | 64000000 | 70 °C | PLASTIC/EPOXY | TSOP2 | 0.400 INCH, PLASTIC, TSOP2-54 | TSOP54,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | TSOP2 | 30 | 5.6 | Non-Compliant | No | 3.3 V | Bulk | e0 | No | EAR99 | Tin/Lead (Sn/Pb) | 70 °C | 0 °C | AUTO/SELF REFRESH | 8542.32.00.24 | DRAMs | CMOS | DUAL | GULL WING | 235 | 1 | 0.8 mm | unknown | 143 MHz | 54 | R-PDSO-G54 | Not Qualified | 3.3 V | 3.6 V | 3.3 V | COMMERCIAL | 3 V | 3.6 V | 3 V | 244.1 MB | 1 | 135 mA | SYNCHRONOUS | 0.285 mA | 5.4 ns | 4 b | 64MX4 | 3-STATE | 1.2 mm | 4 | 15 b | 256 Mb | 0.002 A | 268435456 bit | 143 MHz | COMMON | SYNCHRONOUS DRAM | 8192 | 1,2,4,8,FP | 1,2,4,8 | FOUR BANK PAGE BURST | YES | 22.22 mm | 10.16 mm | No | Contains Lead | ||||||||||||||||||||
![]() | Mfr Part No MT48LC16M16A2TG-7EIT:D | Micron | Datasheet | 296 | - | Min: 1 Mult: 1 | YES | 54 | 5.4 ns | 143 MHz | MICRON TECHNOLOGY INC | Micron Technology Inc | MT48LC16M16A2TG-7EIT:D | 16777216 words | 16000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TSOP2 | 0.400 INCH, PLASTIC, TSOP2-54 | TSOP54,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | TSOP2 | 30 | 8.13 | No | 3.3 V | e0 | No | EAR99 | Tin/Lead (Sn/Pb) | AUTO/SELF REFRESH | 8542.32.00.24 | DRAMs | CMOS | DUAL | GULL WING | 235 | 1 | 0.8 mm | unknown | 54 | R-PDSO-G54 | Not Qualified | 3.6 V | 3.3 V | INDUSTRIAL | 3 V | 1 | SYNCHRONOUS | 0.285 mA | 16MX16 | 3-STATE | 1.2 mm | 16 | 0.002 A | 268435456 bit | COMMON | SYNCHRONOUS DRAM | 8192 | 1,2,4,8,FP | 1,2,4,8 | FOUR BANK PAGE BURST | YES | 22.22 mm | 10.16 mm | |||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No MT48LC16M16A2TG-7E:D | Micron | Datasheet | 1600 | - | Min: 1 Mult: 1 | YES | 54 | 5.4 ns | 143 MHz | MICRON TECHNOLOGY INC | Micron Technology Inc | MT48LC16M16A2TG-7E:D | 16777216 words | 16000000 | 70 °C | PLASTIC/EPOXY | TSOP2 | 0.400 INCH, PLASTIC, TSOP2-54 | TSOP54,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | TSOP2 | 30 | 8.09 | No | 3.3 V | e0 | No | EAR99 | Tin/Lead (Sn/Pb) | AUTO/SELF REFRESH | 8542.32.00.24 | DRAMs | CMOS | DUAL | GULL WING | 235 | 1 | 0.8 mm | unknown | 54 | R-PDSO-G54 | Not Qualified | 3.6 V | 3.3 V | COMMERCIAL | 3 V | 1 | SYNCHRONOUS | 0.285 mA | 16MX16 | 3-STATE | 1.2 mm | 16 | 0.002 A | 268435456 bit | COMMON | SYNCHRONOUS DRAM | 8192 | 1,2,4,8,FP | 1,2,4,8 | FOUR BANK PAGE BURST | YES | 22.22 mm | 10.16 mm | ||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No MT48LC32M8A2TG-7E:D | Micron | Datasheet | 8 | - | Min: 1 Mult: 1 | YES | 54 | 5.4 ns | 143 MHz | MICRON TECHNOLOGY INC | Micron Technology Inc | MT48LC32M8A2TG-7E:D | 33554432 words | 32000000 | 70 °C | PLASTIC/EPOXY | TSOP2 | 0.400 INCH, PLASTIC, TSOP2-54 | TSOP54,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | TSOP2 | 30 | 8.57 | No | 3.3 V | e0 | No | EAR99 | Tin/Lead (Sn/Pb) | AUTO/SELF REFRESH | 8542.32.00.24 | DRAMs | CMOS | DUAL | GULL WING | 235 | 1 | 0.8 mm | unknown | 54 | R-PDSO-G54 | Not Qualified | 3.6 V | 3.3 V | COMMERCIAL | 3 V | 1 | SYNCHRONOUS | 0.285 mA | 32MX8 | 3-STATE | 1.2 mm | 8 | 0.002 A | 268435456 bit | COMMON | SYNCHRONOUS DRAM | 8192 | 1,2,4,8,FP | 1,2,4,8 | FOUR BANK PAGE BURST | YES | 22.22 mm | 10.16 mm | ||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No MT41K256M16RE-15E:D | Micron | Datasheet | 800 | - | Min: 1 Mult: 1 | YES | 96 | 667 MHz | MICRON TECHNOLOGY INC | Micron Technology Inc | MT41K256M16RE-15E:D | 268435456 words | 256000000 | 95 °C | PLASTIC/EPOXY | TFBGA | TFBGA, BGA96,9X16,32 | BGA96,9X16,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | 5.66 | Yes | 1.35 V | EAR99 | AUTO/SELF REFRESH | 8542.32.00.36 | DRAMs | CMOS | BOTTOM | BALL | 1 | 0.8 mm | unknown | R-PBGA-B96 | Not Qualified | 1.45 V | 1.35 V | OTHER | 1.283 V | 1 | SYNCHRONOUS | 0.285 mA | 256MX16 | 3-STATE | 1.2 mm | 16 | 0.02 A | 4294967296 bit | COMMON | DDR DRAM | 8192 | 8 | 8 | MULTI BANK PAGE BURST | YES | 14 mm | 10 mm | ||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No GS8644Z18E-133I | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 8 Weeks | YES | 165 | 8.5 ns | 133 MHz | SDR | GSI TECHNOLOGY | GSI Technology | GS8644Z18E-133I | 117.6@Flow-Through/133@Pipelined MHz | 2.7, 3.6 V | 2.3, 3 V | 3 | Surface Mount | 18 Bit | 4 MWords | 4000000 | 85 °C | -40 °C | PLASTIC/EPOXY | BGA | BGA, BGA165,11X15,40 | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY | Active | BGA | NOT SPECIFIED | 5.14 | No | FBGA | 2.5 V | Synchronous | 2.5, 3.3 V | Industrial grade | -40 to 85 °C | No | 3A991.B.2.B | ALSO OPERATES AT 3.3V SUPPLY; PIPELINED OR FLOW-THROUGH ARCHITECTURE | 8542.32.00.41 | SRAMs | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 1 mm | compliant | 165 | R-PBGA-B165 | Not Qualified | 2.7 V | 2.5/3.3 V | INDUSTRIAL | 2.3 V | 2 | SYNCHRONOUS | 0.285 mA | Flow-Through/Pipelined | 4MX18 | 3-STATE | 1.5 mm | 18 | 22 Bit | 72 Mbit | 0.16 A | 75497472 bit | Industrial | PARALLEL | COMMON | ZBT SRAM | 2.3 V | 17 mm | 15 mm |
MT48LC32M8A2FB-7E:D
Micron
Package:Memory
Price: please inquire
W971GG6JB-18
Winbond
Package:Memory
Price: please inquire
MT48LC16M16A2P-7E
Micron Technology
Package:Memory
Price: please inquire
IS64LPS12832EC-250TQLA3
Integrated Silicon Solution Inc
Package:Memory
Price: please inquire
M12L64322A-7TG
Elite Semiconductor Memory Technology Inc
Package:Memory
Price: please inquire
IS64NLP12836EC-250B3LA3
Integrated Silicon Solution Inc
Package:Memory
Price: please inquire
M12L64322A-7T
Elite Semiconductor Memory Technology Inc
Package:Memory
Price: please inquire
IS64VPS12832EC-250B3LA3
Integrated Silicon Solution Inc
Package:Memory
Price: please inquire
IDT71V546S117PFI
Integrated Device Technology Inc
Package:Memory
Price: please inquire
IS64NVP12832EC-250TQLA3
Integrated Silicon Solution Inc
Package:Memory
Price: please inquire
IS64NLF12836EC-6.5B2LA3
Integrated Silicon Solution Inc
Package:Memory
Price: please inquire
MT41J256M16RE-15E:D
Micron
Package:Memory
Price: please inquire
MT48LC64M4A2TG-7E:D
Micron
Package:Memory
Price: please inquire
MT48LC16M16A2TG-7EIT:D
Micron
Package:Memory
Price: please inquire
MT48LC16M16A2TG-7E:D
Micron
Package:Memory
Price: please inquire
MT48LC32M8A2TG-7E:D
Micron
Package:Memory
Price: please inquire
MT41K256M16RE-15E:D
Micron
Package:Memory
Price: please inquire
GS8644Z18E-133I
GSI Technology
Package:Memory
Price: please inquire
