The category is 'Memory'
Memory (27)
- All Manufacturers
- I/O Type
- Ihs Manufacturer
- JESD-30 Code
- Memory Density
- Memory IC Type
- Memory Width
- Number of Terminals
- Number of Words
- Number of Words Code
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- Organization
- Supply Current-Max
- Supply Current-Max:
0.29 mA
Image | Part Number | Manufacturer | Datasheet | Availability | Pricing(USD) | Quantity | RoHS | Mount | Mounting Type | Package / Case | Surface Mount | Number of Pins | Supplier Device Package | Number of Terminals | Access Time-Max | Clock Frequency-Max (fCLK) | Ihs Manufacturer | Manufacturer | Manufacturer Part Number | Mfr | Moisture Sensitivity Levels | Number of Words | Number of Words Code | Operating Temperature-Max | Operating Temperature-Min | Package | Package Body Material | Package Code | Package Description | Package Equivalence Code | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Product Status | Reflow Temperature-Max (s) | Risk Rank | RoHS | Rohs Code | Supply Voltage-Nom (Vsup) | Wavelength-dominant | Series | Size / Dimension | JESD-609 Code | Pbfree Code | ECCN Code | Terminal Finish | Max Operating Temperature | Min Operating Temperature | Color | Additional Feature | HTS Code | Subcategory | Technology | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Terminal Pitch | Reach Compliance Code | Pin Count | JESD-30 Code | Qualification Status | Operating Supply Voltage | Supply Voltage-Max (Vsup) | Power Supplies | Temperature Grade | Supply Voltage-Min (Vsup) | Configuration | Max Supply Voltage | Min Supply Voltage | Number of Ports | Nominal Supply Current | Operating Mode | Voltage - Forward (Vf) (Typ) | Viewing Angle | Supply Current-Max | Current - Test | Access Time | Lens Style | Data Bus Width | Organization | Output Characteristics | Lens Size | Seated Height-Max | Memory Width | Address Bus Width | Density | Millicandela Rating | Standby Current-Max | Lens Transparency | Wavelength - Peak | Memory Density | Lens Color | Max Frequency | Parallel/Serial | I/O Type | Memory IC Type | Standby Voltage-Min | Output Enable | Refresh Cycles | Sequential Burst Length | Interleaved Burst Length | Access Mode | Features | Self Refresh | Length | Width | Height (Max) | Radiation Hardening | Lead Free |
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![]() | Mfr Part No MT46V16M16TG-5B IT K | Micron Technology | Datasheet | - | - | Min: 1 Mult: 1 | Surface Mount | Surface Mount | 2-SMD, Flat Lead | YES | 66 | SMD | 66 | 0.7 ns | 200 MHz | MICRON TECHNOLOGY INC | Micron Technology Inc | MT46V16M16TG-5BIT:K | OSRAM Opto (ams OSRAM) | 16777216 words | 16000000 | 85 °C | -40 °C | Tape & Reel (TR) | PLASTIC/EPOXY | TSSOP | 0.40 INCH, PLASTIC, TSOP-66 | TSSOP66,.46 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | Obsolete | TSOP | Obsolete | 30 | 5.68 | Compliant | No | 2.6 V | - | PointLED® | 3.40mm L x 1.90mm W | e0 | No | EAR99 | Tin/Lead (Sn/Pb) | 85 °C | -40 °C | - | AUTO/SELF REFRESH | 8542.32.00.24 | DRAMs | CMOS | DUAL | GULL WING | 235 | 1 | 0.65 mm | unknown | 66 | R-PDSO-G66 | Not Qualified | 2.5 V | 2.7 V | 2.6 V | INDUSTRIAL | 2.5 V | - | 2.7 V | 2.5 V | 1 | 290 mA | SYNCHRONOUS | - | - | 0.29 mA | - | 700 ps | - | 16 b | 16MX16 | 3-STATE | - | 1.2 mm | 16 | 15 b | 256 Mb | - | 0.004 A | - | - | 268435456 bit | - | 400 MHz | COMMON | DDR DRAM | 8192 | 2,4,8 | 2,4,8 | FOUR BANK PAGE BURST | - | YES | 22.22 mm | 10.16 mm | 0.87mm | No | ||||||
![]() | Mfr Part No K4G323222M-PC50 | Samsung Semiconductor | Datasheet | - | - | Min: 1 Mult: 1 | YES | 100 | 4.5 ns | 200 MHz | SAMSUNG SEMICONDUCTOR INC | 1048576 words | 1000000 | 70 °C | PLASTIC/EPOXY | QFP | QFP, QFP100,.7X.9 | QFP100,.7X.9 | RECTANGULAR | FLATPACK | Obsolete | QFP | No | 3.3 V | e0 | EAR99 | TIN LEAD | AUTO/SELF REFRESH | 8542.32.00.02 | QUAD | GULL WING | 1 | 0.65 mm | compliant | 100 | R-PQFP-G100 | Not Qualified | 3.6 V | COMMERCIAL | 3.135 V | 1 | SYNCHRONOUS | 0.29 mA | 1MX32 | 3-STATE | 3 mm | 32 | 0.002 A | 33554432 bit | COMMON | SYNCHRONOUS GRAPHICS RAM | 2048 | 1,2,4,8,FP | 4,8 | DUAL BANK PAGE BURST | YES | 20 mm | 14 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No MCM67A618FN10 | Freescale Semiconductor | Datasheet | - | - | Min: 1 Mult: 1 | YES | 52 | 10 ns | MOTOROLA SEMICONDUCTOR PRODUCTS | 65536 words | 64000 | 70 °C | PLASTIC/EPOXY | QCCJ | QCCJ, LDCC52,.8SQ | LDCC52,.8SQ | SQUARE | CHIP CARRIER | Obsolete | No | 5 V | e0 | Tin/Lead (Sn/Pb) | QUAD | J BEND | 1.27 mm | unknown | S-PQCC-J52 | Not Qualified | 5 V | COMMERCIAL | ASYNCHRONOUS | 0.29 mA | 64KX18 | 3-STATE | 18 | 0.02 A | 1179648 bit | PARALLEL | COMMON | STANDARD SRAM | 4.75 V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No MCM67A618FN10 | Motorola Semiconductor Products | Datasheet | - | - | Min: 1 Mult: 1 | YES | 52 | 10 ns | MOTOROLA INC | 65536 words | 64000 | 70 °C | PLASTIC/EPOXY | QCCJ | PLASTIC, LCC-52 | LDCC52,.8SQ | SQUARE | CHIP CARRIER | Obsolete | No | 5 V | e0 | 3A991.B.2.A | Tin/Lead (Sn/Pb) | BYTE WRITE | 8542.32.00.41 | QUAD | J BEND | 1 | 1.27 mm | unknown | S-PQCC-J52 | Not Qualified | 5.25 V | COMMERCIAL | 4.75 V | 1 | ASYNCHRONOUS | 0.29 mA | 64KX18 | 3-STATE | 4.57 mm | 18 | 0.02 A | 1179648 bit | PARALLEL | COMMON | CACHE TAG SRAM | 4.75 V | YES | 19.1262 mm | 19.1262 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No IS61SF6432-10PQ | Integrated Silicon Solution Inc | Datasheet | - | - | Min: 1 Mult: 1 | YES | 100 | 10 ns | 66 MHz | INTEGRATED SILICON SOLUTION INC | 65536 words | 64000 | 70 °C | PLASTIC/EPOXY | LQFP | PLASTIC, QFP-100 | QFP100,.7X.9 | RECTANGULAR | FLATPACK, LOW PROFILE | Obsolete | QFP | No | 3.3 V | e0 | 3A991.B.2.A | Tin/Lead (Sn/Pb) | SELF-TIMED WRITE; BURST COUNTER; BYTE WRITE; LINEAR/INTERLEAVED BURST SEQUENCE | 8542.32.00.41 | QUAD | GULL WING | 1 | 0.65 mm | unknown | 100 | R-PQFP-G100 | Not Qualified | 3.63 V | COMMERCIAL | 3.135 V | SYNCHRONOUS | 0.29 mA | 64KX32 | 3-STATE | 1.6 mm | 32 | 0.01 A | 2097152 bit | PARALLEL | COMMON | CACHE SRAM | 3.14 V | 20 mm | 14 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No IS61SF6432-10PQ | Integrated Circuit Solution Inc | Datasheet | - | - | Min: 1 Mult: 1 | YES | 100 | 10 ns | 66 MHz | INTEGRATED CIRCUIT SOLUTION INC | 65536 words | 64000 | 70 °C | PLASTIC/EPOXY | QFP | QFP, QFP100,.7X.9 | QFP100,.7X.9 | RECTANGULAR | FLATPACK | Transferred | No | 3.3 V | e0 | 3A991.B.2.A | Tin/Lead (Sn/Pb) | 8542.32.00.41 | QUAD | GULL WING | 0.635 mm | unknown | R-PQFP-G100 | Not Qualified | COMMERCIAL | SYNCHRONOUS | 0.29 mA | 64KX32 | 3-STATE | 32 | 0.01 A | 2097152 bit | PARALLEL | COMMON | STANDARD SRAM | 3.14 V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No AS7C251MPFS18A-166TQC | Alliance Semiconductor Corporation | Datasheet | - | - | Min: 1 Mult: 1 | YES | 100 | 3.5 ns | 166 MHz | ALLIANCE SEMICONDUCTOR CORP | 1048576 words | 1000000 | 70 °C | PLASTIC/EPOXY | LQFP | LQFP, QFP100,.63X.87 | QFP100,.63X.87 | RECTANGULAR | FLATPACK, LOW PROFILE | Transferred | QFP | No | 2.5 V | e0 | 3A991.B.2.A | TIN LEAD | PIPELINED ARCHITECTURE | 8542.32.00.41 | QUAD | GULL WING | 1 | 0.65 mm | unknown | 100 | R-PQFP-G100 | Not Qualified | 2.625 V | COMMERCIAL | 2.375 V | SYNCHRONOUS | 0.29 mA | 1MX18 | 3-STATE | 1.6 mm | 18 | 0.04 A | 18874368 bit | PARALLEL | COMMON | STANDARD SRAM | 2.38 V | 20 mm | 14 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No MT46V16M16P5BITK | Micron Technology | Datasheet | 4 | - | Min: 1 Mult: 1 | Surface Mount | YES | 66 | 66 | 0.7 ns | 200 MHz | MICRON TECHNOLOGY INC | Micron Technology Inc | MT46V16M16P-5BIT:K | 16777216 words | 16000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TSSOP | TSSOP, TSSOP66,.46 | TSSOP66,.46 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | Obsolete | TSOP | 30 | 5.6 | Compliant | Yes | 2.6 V | e3 | Yes | EAR99 | Matte Tin (Sn) | 85 °C | -40 °C | AUTO/SELF REFRESH | 8542.32.00.24 | DRAMs | CMOS | DUAL | GULL WING | 260 | 1 | 0.65 mm | compliant | 66 | R-PDSO-G66 | Not Qualified | 2.5 V | 2.7 V | 2.6 V | INDUSTRIAL | 2.5 V | 2.7 V | 2.5 V | 1 | 290 mA | SYNCHRONOUS | 0.29 mA | 700 ps | 16 b | 16MX16 | 3-STATE | 1.2 mm | 16 | 15 b | 256 Mb | 0.004 A | 268435456 bit | 400 MHz | COMMON | DDR DRAM | 8192 | 2,4,8 | 2,4,8 | FOUR BANK PAGE BURST | YES | 22.22 mm | 10.16 mm | No | Lead Free | |||||||||||||||||||||||||||
![]() | Mfr Part No MCM67J518FN7 | Motorola Mobility LLC | Datasheet | - | - | Min: 1 Mult: 1 | YES | 52 | 7 ns | MOTOROLA INC | 32768 words | 32000 | 70 °C | PLASTIC/EPOXY | QCCJ | QCCJ, LDCC52,.8SQ | LDCC52,.8SQ | SQUARE | CHIP CARRIER | Obsolete | LCC | 5 V | e0 | 3A991.B.2.B | Tin/Lead (Sn/Pb) | OUTPUT REGISTER; SELF-TIMED WRITE; BURST COUNTER; BYTE WRITE | 8542.32.00.41 | QUAD | J BEND | 1 | 1.27 mm | unknown | 52 | S-PQCC-J52 | Not Qualified | 5.25 V | COMMERCIAL | 4.75 V | 1 | SYNCHRONOUS | 0.29 mA | 32KX18 | 3-STATE | 4.57 mm | 18 | 0.075 A | 589824 bit | PARALLEL | COMMON | CACHE SRAM | 4.75 V | YES | 19.1262 mm | 19.1262 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No MCM67J518FN7 | Freescale Semiconductor | Datasheet | - | - | Min: 1 Mult: 1 | YES | 52 | 7 ns | MOTOROLA SEMICONDUCTOR PRODUCTS | 32768 words | 32000 | 70 °C | PLASTIC/EPOXY | QCCJ | QCCJ, LDCC52,.8SQ | LDCC52,.8SQ | SQUARE | CHIP CARRIER | Obsolete | No | 5 V | e0 | Tin/Lead (Sn/Pb) | QUAD | J BEND | 1.27 mm | unknown | S-PQCC-J52 | Not Qualified | 5 V | COMMERCIAL | SYNCHRONOUS | 0.29 mA | 32KX18 | 3-STATE | 18 | 0.075 A | 589824 bit | PARALLEL | COMMON | STANDARD SRAM | 4.75 V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No EDE1108ACSE-8E-E | Elpida Memory Inc | Datasheet | - | - | Min: 1 Mult: 1 | YES | 60 | 0.4 ns | 400 MHz | ELPIDA MEMORY INC | 134217728 words | 128000000 | 85 °C | PLASTIC/EPOXY | TFBGA | TFBGA, BGA60,9X11,32 | BGA60,9X11,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | BGA | Yes | 1.8 V | e1 | EAR99 | TIN SILVER COPPER | AUTO/SELF REFRESH | 8542.32.00.32 | BOTTOM | BALL | 1 | 0.8 mm | unknown | 60 | R-PBGA-B60 | Not Qualified | 1.9 V | OTHER | 1.7 V | 1 | SYNCHRONOUS | 0.29 mA | 128MX8 | 3-STATE | 1.2 mm | 8 | 1073741824 bit | COMMON | SYNCHRONOUS DRAM | 8192 | 4,8 | 4,8 | MULTI BANK PAGE BURST | YES | 11.5 mm | 11 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No MCM67A618AFN10 | Motorola Semiconductor Products | Datasheet | - | - | Min: 1 Mult: 1 | YES | 52 | 10 ns | MOTOROLA INC | 65536 words | 64000 | 70 °C | PLASTIC/EPOXY | QCCJ | PLASTIC, LCC-52 | LDCC52,.8SQ | SQUARE | CHIP CARRIER | Obsolete | No | 5 V | e0 | 3A991.B.2.A | TIN LEAD | BYTE WRITE | 8542.32.00.41 | QUAD | J BEND | 1 | 1.27 mm | unknown | S-PQCC-J52 | Not Qualified | 5.25 V | COMMERCIAL | 4.75 V | 1 | ASYNCHRONOUS | 0.29 mA | 64KX18 | 3-STATE | 4.57 mm | 18 | 0.02 A | 1179648 bit | PARALLEL | COMMON | CACHE SRAM | 4.75 V | YES | 19.1262 mm | 19.1262 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No MT46V16M16P-5B:K | Micron | Datasheet | 12800 | - | Min: 1 Mult: 1 | YES | 66 | 0.7 ns | 200 MHz | MICRON TECHNOLOGY INC | Micron Technology Inc | MT46V16M16P-5B:K | 3 | 16777216 words | 16000000 | 70 °C | PLASTIC/EPOXY | TSSOP | TSSOP, TSSOP66,.46 | TSSOP66,.46 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | Obsolete | TSOP | 30 | 5.58 | Yes | 2.6 V | e3 | Yes | EAR99 | Matte Tin (Sn) | AUTO/SELF REFRESH | 8542.32.00.24 | DRAMs | CMOS | DUAL | GULL WING | 260 | 1 | 0.65 mm | compliant | 66 | R-PDSO-G66 | Not Qualified | 2.7 V | 2.6 V | COMMERCIAL | 2.5 V | 1 | SYNCHRONOUS | 0.29 mA | 16MX16 | 3-STATE | 1.2 mm | 16 | 0.004 A | 268435456 bit | COMMON | DDR DRAM | 8192 | 2,4,8 | 2,4,8 | FOUR BANK PAGE BURST | YES | 22.22 mm | 10.16 mm | |||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No MT46V32M8TG-5B:K | Micron | Datasheet | 14 | - | Min: 1 Mult: 1 | YES | 66 | 0.7 ns | 200 MHz | MICRON TECHNOLOGY INC | Micron Technology Inc | MT46V32M8TG-5B:K | 33554432 words | 32000000 | 70 °C | PLASTIC/EPOXY | TSSOP | 0.40 INCH, PLASTIC, TSOP-66 | TSSOP66,.46 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | Obsolete | TSOP | 30 | 5.62 | No | 2.6 V | e0 | No | EAR99 | Tin/Lead (Sn/Pb) | AUTO/SELF REFRESH | 8542.32.00.24 | DRAMs | CMOS | DUAL | GULL WING | 235 | 1 | 0.65 mm | unknown | 66 | R-PDSO-G66 | Not Qualified | 2.7 V | 2.6 V | COMMERCIAL | 2.5 V | 1 | SYNCHRONOUS | 0.29 mA | 32MX8 | 3-STATE | 1.2 mm | 8 | 0.004 A | 268435456 bit | COMMON | DDR DRAM | 8192 | 2,4,8 | 2,4,8 | FOUR BANK PAGE BURST | YES | 22.22 mm | 10.16 mm | ||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No MT46V16M16TG-5B:K | Micron | Datasheet | 1941 | - | Min: 1 Mult: 1 | YES | 66 | 0.7 ns | 200 MHz | MICRON TECHNOLOGY INC | Micron Technology Inc | MT46V16M16TG-5B:K | 16777216 words | 16000000 | 70 °C | PLASTIC/EPOXY | TSSOP | 0.40 INCH, PLASTIC, TSOP-66 | TSSOP66,.46 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | Obsolete | TSOP | 30 | 5.62 | No | 2.6 V | e0 | No | EAR99 | Tin/Lead (Sn/Pb) | AUTO/SELF REFRESH | 8542.32.00.24 | DRAMs | CMOS | DUAL | GULL WING | 235 | 1 | 0.65 mm | unknown | 66 | R-PDSO-G66 | Not Qualified | 2.7 V | 2.6 V | COMMERCIAL | 2.5 V | 1 | SYNCHRONOUS | 0.29 mA | 16MX16 | 3-STATE | 1.2 mm | 16 | 0.004 A | 268435456 bit | COMMON | DDR DRAM | 8192 | 2,4,8 | 2,4,8 | FOUR BANK PAGE BURST | YES | 22.22 mm | 10.16 mm | ||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No MT41J512M8RA-125:D | Micron | Datasheet | - | - | Min: 1 Mult: 1 | YES | 78 | 0.225 ns | 800 MHz | MICRON TECHNOLOGY INC | Micron Technology Inc | MT41J512M8RA-125:D | 536870912 words | 512000000 | 85 °C | PLASTIC/EPOXY | TFBGA | TFBGA, BGA78,9X13,32 | BGA78,9X13,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | 5.69 | Yes | 1.5 V | AUTO/SELF REFRESH | DRAMs | CMOS | BOTTOM | BALL | 1 | 0.8 mm | unknown | R-PBGA-B78 | Not Qualified | 1.575 V | 1.5 V | OTHER | 1.425 V | 1 | SYNCHRONOUS | 0.29 mA | 512MX8 | 3-STATE | 1.2 mm | 8 | 0.02 A | 4294967296 bit | COMMON | DDR DRAM | 8192 | 8 | 8 | MULTI BANK PAGE BURST | YES | 12 mm | 10.5 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No MT46V32M8P-5B:K | Micron | Datasheet | 8 | - | Min: 1 Mult: 1 | YES | 66 | 0.7 ns | 200 MHz | MICRON TECHNOLOGY INC | Micron Technology Inc | MT46V32M8P-5B:K | 3 | 33554432 words | 32000000 | 70 °C | PLASTIC/EPOXY | TSSOP | TSSOP, TSSOP66,.46 | TSSOP66,.46 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | Obsolete | TSOP | 30 | 8.37 | Yes | 2.6 V | e3 | Yes | EAR99 | Matte Tin (Sn) | AUTO/SELF REFRESH | 8542.32.00.24 | DRAMs | CMOS | DUAL | GULL WING | 260 | 1 | 0.65 mm | compliant | 66 | R-PDSO-G66 | Not Qualified | 2.7 V | 2.6 V | COMMERCIAL | 2.5 V | 1 | SYNCHRONOUS | 0.29 mA | 32MX8 | 3-STATE | 1.2 mm | 8 | 0.004 A | 268435456 bit | COMMON | DDR DRAM | 8192 | 2,4,8 | 2,4,8 | FOUR BANK PAGE BURST | YES | 22.22 mm | 10.16 mm | |||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No MT46V64M4CY-5B:K | Micron | Datasheet | - | - | Min: 1 Mult: 1 | YES | 60 | 0.7 ns | 200 MHz | MICRON TECHNOLOGY INC | Micron Technology Inc | MT46V64M4CY-5B:K | 67108864 words | 64000000 | 70 °C | PLASTIC/EPOXY | TBGA | TBGA, BGA60,9X12,40/32 | BGA60,9X12,40/32 | RECTANGULAR | GRID ARRAY, THIN PROFILE | Obsolete | BGA | 30 | 5.62 | Yes | 2.6 V | e1 | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | AUTO/SELF REFRESH | 8542.32.00.24 | DRAMs | CMOS | BOTTOM | BALL | 260 | 1 | 1 mm | unknown | 60 | R-PBGA-B60 | Not Qualified | 2.7 V | 2.6 V | COMMERCIAL | 2.5 V | 1 | SYNCHRONOUS | 0.29 mA | 64MX4 | 3-STATE | 1.2 mm | 4 | 0.004 A | 268435456 bit | COMMON | DDR DRAM | 8192 | 2,4,8 | 2,4,8 | FOUR BANK PAGE BURST | YES | 12.5 mm | 8 mm | |||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No MT46V16M16CY-5BIT:K | Micron | Datasheet | 2400 | - | Min: 1 Mult: 1 | YES | 60 | 0.7 ns | 200 MHz | MICRON TECHNOLOGY INC | Micron Technology Inc | MT46V16M16CY-5BIT:K | 16777216 words | 16000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TBGA | TBGA, BGA60,9X12,40/32 | BGA60,9X12,40/32 | RECTANGULAR | GRID ARRAY, THIN PROFILE | Obsolete | BGA | 30 | 5.19 | Yes | 2.6 V | e1 | Yes | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | AUTO/SELF REFRESH | 8542.32.00.24 | DRAMs | CMOS | BOTTOM | BALL | 260 | 1 | 1 mm | compliant | 60 | R-PBGA-B60 | Not Qualified | 2.7 V | 2.6 V | INDUSTRIAL | 2.5 V | 1 | SYNCHRONOUS | 0.29 mA | 16MX16 | 3-STATE | 1.2 mm | 16 | 0.004 A | 268435456 bit | COMMON | DDR DRAM | 8192 | 2,4,8 | 2,4,8 | FOUR BANK PAGE BURST | YES | 12.5 mm | 8 mm | |||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No MT46V16M16CV-5B:K | Micron | Datasheet | 2 | - | Min: 1 Mult: 1 | YES | 60 | 0.7 ns | 200 MHz | MICRON TECHNOLOGY INC | Micron Technology Inc | MT46V16M16CV-5B:K | 16777216 words | 16000000 | 70 °C | PLASTIC/EPOXY | TBGA | (8 X 12.5) MM, PLASTIC, FBGA-60 | BGA60,9X12,40/32 | RECTANGULAR | GRID ARRAY, THIN PROFILE | Obsolete | BGA | 30 | 5.19 | No | 2.6 V | e0 | No | EAR99 | Tin/Lead/Silver (Sn/Pb/Ag) | AUTO/SELF REFRESH | 8542.32.00.24 | DRAMs | CMOS | BOTTOM | BALL | 235 | 1 | 1 mm | unknown | 60 | R-PBGA-B60 | Not Qualified | 2.7 V | 2.6 V | COMMERCIAL | 2.5 V | 1 | SYNCHRONOUS | 0.29 mA | 16MX16 | 3-STATE | 1.2 mm | 16 | 0.004 A | 268435456 bit | COMMON | DDR DRAM | 8192 | 2,4,8 | 2,4,8 | FOUR BANK PAGE BURST | YES | 12.5 mm | 8 mm |
MT46V16M16TG-5B IT K
Micron Technology
Package:Memory
Price: please inquire
K4G323222M-PC50
Samsung Semiconductor
Package:Memory
Price: please inquire
MCM67A618FN10
Freescale Semiconductor
Package:Memory
Price: please inquire
MCM67A618FN10
Motorola Semiconductor Products
Package:Memory
Price: please inquire
IS61SF6432-10PQ
Integrated Silicon Solution Inc
Package:Memory
Price: please inquire
IS61SF6432-10PQ
Integrated Circuit Solution Inc
Package:Memory
Price: please inquire
AS7C251MPFS18A-166TQC
Alliance Semiconductor Corporation
Package:Memory
Price: please inquire
MT46V16M16P5BITK
Micron Technology
Package:Memory
Price: please inquire
MCM67J518FN7
Motorola Mobility LLC
Package:Memory
Price: please inquire
MCM67J518FN7
Freescale Semiconductor
Package:Memory
Price: please inquire
EDE1108ACSE-8E-E
Elpida Memory Inc
Package:Memory
Price: please inquire
MCM67A618AFN10
Motorola Semiconductor Products
Package:Memory
Price: please inquire
MT46V16M16P-5B:K
Micron
Package:Memory
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MT46V32M8TG-5B:K
Micron
Package:Memory
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MT46V16M16TG-5B:K
Micron
Package:Memory
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MT41J512M8RA-125:D
Micron
Package:Memory
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MT46V32M8P-5B:K
Micron
Package:Memory
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MT46V64M4CY-5B:K
Micron
Package:Memory
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MT46V16M16CY-5BIT:K
Micron
Package:Memory
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MT46V16M16CV-5B:K
Micron
Package:Memory
Price: please inquire
