The category is 'Memory'
Memory (27)
- All Manufacturers
- I/O Type
- Ihs Manufacturer
- JESD-30 Code
- Memory Density
- Memory IC Type
- Memory Width
- Number of Terminals
- Number of Words
- Number of Words Code
- Operating Mode
- Organization
- Supply Current-Max
- Supply Current-Max:
0.29 mA
Image | Part Number | Manufacturer | Datasheet | Availability | Pricing(USD) | Quantity | RoHS | Factory Lead Time | Surface Mount | Number of Terminals | Access Time-Max | Clock Frequency-Max (fCLK) | Ihs Manufacturer | Manufacturer | Manufacturer Part Number | Moisture Sensitivity Levels | Number of Words | Number of Words Code | Operating Temperature-Max | Operating Temperature-Min | Package Body Material | Package Code | Package Description | Package Equivalence Code | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Reflow Temperature-Max (s) | Risk Rank | RoHS | Rohs Code | Supply Voltage-Nom (Vsup) | JESD-609 Code | Pbfree Code | ECCN Code | Terminal Finish | Max Operating Temperature | Min Operating Temperature | Additional Feature | HTS Code | Subcategory | Technology | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Terminal Pitch | Reach Compliance Code | Pin Count | JESD-30 Code | Qualification Status | Operating Supply Voltage | Supply Voltage-Max (Vsup) | Power Supplies | Temperature Grade | Supply Voltage-Min (Vsup) | Number of Ports | Operating Mode | Supply Current-Max | Organization | Output Characteristics | Seated Height-Max | Memory Width | Address Bus Width | Density | Standby Current-Max | Memory Density | Parallel/Serial | I/O Type | Memory IC Type | Standby Voltage-Min | Refresh Cycles | Sequential Burst Length | Interleaved Burst Length | Access Mode | Self Refresh | Length | Width | Radiation Hardening |
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![]() | Mfr Part No MT46V32M8CY5B:K | Micron | Datasheet | - | - | Min: 1 Mult: 1 | YES | 60 | 0.7 ns | 200 MHz | MICRON TECHNOLOGY INC | Micron Technology Inc | MT46V32M8CY-5B:K | 33554432 words | 32000000 | 70 °C | PLASTIC/EPOXY | TBGA | TBGA, BGA60,9X12,40/32 | BGA60,9X12,40/32 | RECTANGULAR | GRID ARRAY, THIN PROFILE | Obsolete | BGA | 30 | 5.6 | Yes | 2.6 V | e1 | Yes | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | AUTO/SELF REFRESH | 8542.32.00.24 | DRAMs | CMOS | BOTTOM | BALL | 260 | 1 | 1 mm | compliant | 60 | R-PBGA-B60 | Not Qualified | 2.7 V | 2.6 V | COMMERCIAL | 2.5 V | 1 | SYNCHRONOUS | 0.29 mA | 32MX8 | 3-STATE | 1.2 mm | 8 | 0.004 A | 268435456 bit | COMMON | DDR DRAM | 8192 | 2,4,8 | 2,4,8 | FOUR BANK PAGE BURST | YES | 12.5 mm | 8 mm | |||||||||||||
![]() | Mfr Part No MT41K512M8RA-125:D | Micron | Datasheet | 800 | - | Min: 1 Mult: 1 | YES | 78 | 800 MHz | MICRON TECHNOLOGY INC | Micron Technology Inc | MT41K512M8RA-125:D | 536870912 words | 512000000 | 95 °C | PLASTIC/EPOXY | TFBGA | TFBGA, BGA78,9X13,32 | BGA78,9X13,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | 5.6 | Yes | 1.35 V | EAR99 | AUTO/SELF REFRESH | 8542.32.00.36 | DRAMs | CMOS | BOTTOM | BALL | 1 | 0.8 mm | unknown | R-PBGA-B78 | Not Qualified | 1.45 V | 1.35 V | OTHER | 1.283 V | 1 | SYNCHRONOUS | 0.29 mA | 512MX8 | 3-STATE | 1.2 mm | 8 | 0.02 A | 4294967296 bit | COMMON | DDR DRAM | 8192 | 8 | 8 | MULTI BANK PAGE BURST | YES | 12 mm | 10.5 mm | |||||||||||||||||||||
![]() | Mfr Part No GS840H32AGT-150I | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 8 Weeks | YES | 100 | 10 ns | 150 MHz | GSI TECHNOLOGY | GSI Technology | GS840H32AGT-150I | 3 | 131072 words | 128000 | 85 °C | -40 °C | PLASTIC/EPOXY | LQFP | LQFP, QFP100,.63X.87 | QFP100,.63X.87 | RECTANGULAR | FLATPACK, LOW PROFILE | Active | QFP | NOT SPECIFIED | 5.35 | Compliant | Yes | 3.3 V | e3 | Yes | 3A991.B.2.B | PURE MATTE TIN | 85 °C | -40 °C | FLOW-THROUGH OR PIPELINED ARCHITECTURE | 8542.32.00.41 | SRAMs | CMOS | QUAD | GULL WING | 260 | 1 | 0.65 mm | compliant | 100 | R-PQFP-G100 | Not Qualified | 3.3 V | 3.6 V | 2.5/3.3,3.3 V | INDUSTRIAL | 3 V | 4 | SYNCHRONOUS | 0.29 mA | 128KX32 | 3-STATE | 1.6 mm | 32 | 17 b | 4 Mb | 0.03 A | 4194304 bit | PARALLEL | COMMON | CACHE SRAM | 3.14 V | 20 mm | 14 mm | No | ||||||
![]() | Mfr Part No GS840H18AGT-150I | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 8 Weeks | YES | 100 | 10 ns | 150 MHz | GSI TECHNOLOGY | GSI Technology | GS840H18AGT-150I | 3 | 262144 words | 256000 | 85 °C | -40 °C | PLASTIC/EPOXY | LQFP | LQFP, QFP100,.63X.87 | QFP100,.63X.87 | RECTANGULAR | FLATPACK, LOW PROFILE | Active | QFP | NOT SPECIFIED | 5.45 | Yes | 3.3 V | e3 | Yes | 3A991.B.2.B | PURE MATTE TIN | FLOW-THROUGH OR PIPELINED ARCHITECTURE | 8542.32.00.41 | SRAMs | CMOS | QUAD | GULL WING | 260 | 1 | 0.65 mm | compliant | 100 | R-PQFP-G100 | Not Qualified | 3.6 V | 2.5/3.3,3.3 V | INDUSTRIAL | 3 V | SYNCHRONOUS | 0.29 mA | 256KX18 | 3-STATE | 1.6 mm | 18 | 0.03 A | 4718592 bit | PARALLEL | COMMON | CACHE SRAM | 3.14 V | 20 mm | 14 mm | ||||||||||||||
![]() | Mfr Part No GS840H36AB-150I | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 8 Weeks | YES | 119 | 10 ns | 150 MHz | GSI TECHNOLOGY | GSI Technology | GS840H36AB-150I | 3 | 131072 words | 128000 | 85 °C | -40 °C | PLASTIC/EPOXY | BGA | BGA, BGA119,7X17,50 | BGA119,7X17,50 | RECTANGULAR | GRID ARRAY | Active | BGA | NOT SPECIFIED | 5.21 | Compliant | No | 3.3 V | e0 | No | 3A991.B.2.B | Tin/Lead (Sn/Pb) | 85 °C | -40 °C | FLOW-THROUGH OR PIPELINED ARCHITECTURE | 8542.32.00.41 | SRAMs | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 1.27 mm | compliant | 119 | R-PBGA-B119 | Not Qualified | 3.3 V | 3.6 V | 2.5/3.3,3.3 V | INDUSTRIAL | 3 V | 4 | SYNCHRONOUS | 0.29 mA | 128KX36 | 3-STATE | 2.19 mm | 36 | 17 b | 4.5 Mb | 0.03 A | 4.5 | PARALLEL | COMMON | CACHE SRAM | 3.14 V | 22 mm | 14 mm | No | ||||||
![]() | Mfr Part No GS84032AGB-150I | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | YES | 119 | 10 ns | 150 MHz | GSI TECHNOLOGY | GSI Technology | GS84032AGB-150I | 3 | 131072 words | 128000 | 85 °C | -40 °C | PLASTIC/EPOXY | BGA | BGA, BGA153,9X17,50 | BGA153,9X17,50 | RECTANGULAR | GRID ARRAY | Obsolete | BGA | NOT SPECIFIED | 5.67 | Yes | 3.3 V | e1 | Yes | 3A991.B.2.B | TIN SILVER COPPER | FLOW-THROUGH OR PIPELINED ARCHITECTURE | 8542.32.00.41 | SRAMs | CMOS | BOTTOM | BALL | 260 | 1 | 1.27 mm | compliant | 119 | R-PBGA-B119 | Not Qualified | 3.6 V | 2.5/3.3,3.3 V | INDUSTRIAL | 3 V | SYNCHRONOUS | 0.29 mA | 128KX32 | 3-STATE | 2.19 mm | 32 | 0.03 A | 4194304 bit | PARALLEL | COMMON | CACHE SRAM | 3.14 V | 22 mm | 14 mm | |||||||||||||||
![]() | Mfr Part No GS84018AB-150I | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | YES | 119 | 10 ns | 150 MHz | GSI TECHNOLOGY | GSI Technology | GS84018AB-150I | 3 | 262144 words | 256000 | 85 °C | -40 °C | PLASTIC/EPOXY | BGA | BGA, BGA119,7X17,50 | BGA119,7X17,50 | RECTANGULAR | GRID ARRAY | Obsolete | BGA | NOT SPECIFIED | 5.68 | No | 3.3 V | e0 | No | 3A991.B.2.B | Tin/Lead (Sn/Pb) | FLOW-THROUGH OR PIPELINED ARCHITECTURE | 8542.32.00.41 | SRAMs | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 1.27 mm | compliant | 119 | R-PBGA-B119 | Not Qualified | 3.6 V | 2.5/3.3,3.3 V | INDUSTRIAL | 3 V | SYNCHRONOUS | 0.29 mA | 256KX18 | 3-STATE | 2.19 mm | 18 | 0.03 A | 4718592 bit | PARALLEL | COMMON | CACHE SRAM | 3.14 V | 22 mm | 14 mm |
MT46V32M8CY5B:K
Micron
Package:Memory
Price: please inquire
MT41K512M8RA-125:D
Micron
Package:Memory
Price: please inquire
GS840H32AGT-150I
GSI Technology
Package:Memory
Price: please inquire
GS840H18AGT-150I
GSI Technology
Package:Memory
Price: please inquire
GS840H36AB-150I
GSI Technology
Package:Memory
Price: please inquire
GS84032AGB-150I
GSI Technology
Package:Memory
Price: please inquire
GS84018AB-150I
GSI Technology
Package:Memory
Price: please inquire
