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Memory (42)

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Supply Current-Max:
0.3 mA

Part Number	Manufacturer	Datasheet	Availability	Pricing(USD)	Quantity	Factory Lead Time	Package / Case	Surface Mount	Number of Pins	Number of Terminals	Access Time-Max	Clock Frequency-Max (fCLK)	Data Rate Architecture	Ihs Manufacturer	Interface Type	Manufacturer	Manufacturer Part Number	Maximum Clock Frequency	Maximum Clock Rate	Maximum Operating Supply Voltage	Maximum Operating Temperature	Minimum Operating Supply Voltage	Minimum Operating Temperature	Moisture Sensitivity Levels	Mounting	Mounting Styles	Number of I/O Lines	Number of Words	Number of Words Code	Operating Temperature-Max	Operating Temperature-Min	Package Body Material	Package Code	Package Description	Package Equivalence Code	Package Shape	Package Style	Part Life Cycle Code	Part Package Code	Reflow Temperature-Max (s)	Risk Rank	RoHS	Rohs Code	Supplier Package	Supply Voltage-Max	Supply Voltage-Min	Supply Voltage-Nom (Vsup)	Timing Type	Typical Operating Supply Voltage	Usage Level	Operating Temperature	Series	JESD-609 Code	Pbfree Code	ECCN Code	Terminal Finish	Max Operating Temperature	Min Operating Temperature	Additional Feature	HTS Code	Subcategory	Technology	Terminal Position	Terminal Form	Peak Reflow Temperature (Cel)	Number of Functions	Terminal Pitch	Reach Compliance Code	Frequency	Time@Peak Reflow Temperature-Max (s)	Pin Count	JESD-30 Code	Qualification Status	Operating Supply Voltage	Supply Voltage-Max (Vsup)	Power Supplies	Temperature Grade	Supply Voltage-Min (Vsup)	Memory Size	Number of Ports	Operating Mode	Supply Current-Max	Access Time	Architecture	Data Bus Width	Organization	Output Characteristics	Seated Height-Max	Memory Width	Address Bus Width	Density	Standby Current-Max	Memory Density	Max Frequency	Screening Level	Parallel/Serial	I/O Type	Memory IC Type	Standby Voltage-Min	Refresh Cycles	Sequential Burst Length	Interleaved Burst Length	Access Mode	Self Refresh	Length	Width	Radiation Hardening	Lead Free
Mfr Part No MT47H64M8B6-25E:D	Micron	Datasheet	-	-	Min: 1 Mult: 1			YES		60	0.4 ns	400 MHz		MICRON TECHNOLOGY INC		Micron Technology Inc	MT47H64M8B6-25E:D											67108864 words	64000000	85 °C		PLASTIC/EPOXY	TFBGA	TFBGA, BGA60,9X11,32	BGA60,9X11,32	SQUARE	GRID ARRAY	Obsolete	BGA	30	5.59		Yes				1.8 V						e1		EAR99	Tin/Silver/Copper (Sn/Ag/Cu)			AUTO/SELF REFRESH	8542.32.00.28	DRAMs	CMOS	BOTTOM	BALL	260	1	0.8 mm	not_compliant			60	S-PBGA-B60	Not Qualified		1.9 V	1.8 V	OTHER	1.7 V		1	SYNCHRONOUS	0.3 mA				64MX8	3-STATE	1.2 mm	8			0.007 A	536870912 bit				COMMON	DDR DRAM		8192	4,8	4,8	FOUR BANK PAGE BURST	YES	10 mm	10 mm
Mfr Part No GS832218AB-333	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1	8 Weeks	BGA-119	YES		119	4.5 ns	333 MHz	SDR	GSI TECHNOLOGY	Parallel	GSI Technology	GS832218AB-333	333 MHz	222@Flow-Through/333@Pipelined MHz	2.7, 3.6 V	+ 70 C	2.3, 3 V	0 C		Surface Mount	SMD/SMT	18 Bit	2 MWords	2000000	70 °C		PLASTIC/EPOXY	BGA	BGA, BGA119,7X17,50	BGA119,7X17,50	RECTANGULAR	GRID ARRAY	Active	BGA	NOT SPECIFIED	5.11		No	FBGA	3.6 V	2.3 V	2.5 V	Synchronous	2.5, 3.3 V	Commercial grade	0 to 85 °C	GS832218AB	e0	No	3A991.B.2.B	Tin/Lead (Sn/Pb)			ALSO OPERATES AT 3.3V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH	8542.32.00.41	SRAMs	CMOS	BOTTOM	BALL	NOT SPECIFIED	1	1.27 mm	compliant			119	R-PBGA-B119	Not Qualified		2.7 V	2.5/3.3 V	COMMERCIAL	2.3 V	36 Mbit	2	SYNCHRONOUS	0.3 mA	4.5 ns	Flow-Through/Pipelined		2MX18	3-STATE	1.99 mm	18	21 Bit	36 Mbit	0.03 A	37748736 bit		Commercial	PARALLEL	COMMON	CACHE SRAM	2.3 V						22 mm	14 mm
Mfr Part No W9425G6EH5I	Winbond Electronics Corporation	Datasheet	-	-	Min: 1 Mult: 1			YES		66	0.7 ns	200 MHz		WINBOND ELECTRONICS CORP		Winbond Electronics Corp	W9425G6EH-5I											16777216 words	16000000	85 °C	-40 °C	PLASTIC/EPOXY	TSOP2	TSOP2, TSSOP66,.46	TSSOP66,.46	RECTANGULAR	SMALL OUTLINE, THIN PROFILE	Obsolete	TSOP2	NOT SPECIFIED	5.19		Yes				2.5 V								EAR99				AUTO/SELF REFRESH	8542.32.00.24	DRAMs	CMOS	DUAL	GULL WING	NOT SPECIFIED	1	0.65 mm	unknown			66	R-PDSO-G66	Not Qualified		2.7 V	2.5 V	INDUSTRIAL	2.3 V		1	SYNCHRONOUS	0.3 mA				16MX16	3-STATE	1.2 mm	16			0.02 A	268435456 bit				COMMON	DDR DRAM		8192	2,4,8	2,4,8	FOUR BANK PAGE BURST	YES	22.22 mm	10.16 mm
Mfr Part No GS832218AB-375	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1	8 Weeks		YES		119	4.2 ns	375 MHz	SDR	GSI TECHNOLOGY		GSI Technology	GS832218AB-375		238@Flow-Through/375@Pipelined MHz	2.7, 3.6 V		2.3, 3 V			Surface Mount		18 Bit	2 MWords	2000000	70 °C		PLASTIC/EPOXY	BGA	BGA, BGA119,7X17,50	BGA119,7X17,50	RECTANGULAR	GRID ARRAY	Active	BGA	NOT SPECIFIED	5.11		No	FBGA			2.5 V	Synchronous	2.5, 3.3 V	Commercial grade	0 to 85 °C		e0	No	3A991.B.2.B	Tin/Lead (Sn/Pb)			ALSO OPERATES AT 3.3V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH	8542.32.00.41	SRAMs	CMOS	BOTTOM	BALL	NOT SPECIFIED	1	1.27 mm	compliant			119	R-PBGA-B119	Not Qualified		2.7 V	2.5/3.3 V	COMMERCIAL	2.3 V		2	SYNCHRONOUS	0.3 mA		Flow-Through/Pipelined		2MX18	3-STATE	1.99 mm	18	21 Bit	36 Mbit	0.03 A	37748736 bit		Commercial	PARALLEL	COMMON	CACHE SRAM	2.3 V						22 mm	14 mm
Mfr Part No CY7C09279-12AC	Cypress Semiconductor	Datasheet	-	-	Min: 1 Mult: 1			YES		100	25 ns	50 MHz		CYPRESS SEMICONDUCTOR CORP		Cypress Semiconductor	CY7C09279-12AC											32768 words	32000	70 °C		PLASTIC/EPOXY	LFQFP	PLASTIC, TQFP-100	QFP100,.63SQ,20	SQUARE	FLATPACK, LOW PROFILE, FINE PITCH	Obsolete	QFP	NOT SPECIFIED	5.8		No				5 V						e0		EAR99	Tin/Lead (Sn/Pb)			FLOW-THROUGH OR PIPELINED ARCHITECTURE	8542.32.00.41	SRAMs	CMOS	QUAD	GULL WING	NOT SPECIFIED	1	0.5 mm	not_compliant			100	S-PQFP-G100	Not Qualified		5.5 V	5 V	COMMERCIAL	4.5 V		2	SYNCHRONOUS	0.3 mA				32KX16	3-STATE	1.6 mm	16			0.0005 A	524288 bit			PARALLEL	COMMON	DUAL-PORT SRAM	4.5 V						14 mm	14 mm
Mfr Part No GS8321Z36E-250	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1			YES		165	6.5 ns	250 MHz		GSI TECHNOLOGY		GSI Technology	GS8321Z36E-250							3				1048576 words	1000000	70 °C		PLASTIC/EPOXY	LBGA	15 X 17 MM, 1 MM PITCH, FPBGA-165	BGA165,11X15,40	RECTANGULAR	GRID ARRAY, LOW PROFILE	Obsolete	BGA	NOT SPECIFIED	5.68		No				2.5 V							No	3A991.B.2.B				FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY	8542.32.00.41	SRAMs	CMOS	BOTTOM	BALL	NOT SPECIFIED	1	1 mm	compliant			165	R-PBGA-B165	Not Qualified		2.7 V	2.5/3.3 V	COMMERCIAL	2.3 V			SYNCHRONOUS	0.3 mA				1MX36	3-STATE	1.5 mm	36			0.06 A	37748736 bit			PARALLEL	COMMON	ZBT SRAM	2.3 V						17 mm	15 mm
Mfr Part No K4H560838H-UCCC	Samsung	Datasheet	800 In Stock	-	Min: 1 Mult: 1			YES	60	66	0.65 ns	200 MHz		SAMSUNG SEMICONDUCTOR INC		Samsung Semiconductor	K4H560838H-UCCC							3				33554432 words	32000000	70 °C		PLASTIC/EPOXY	TSSOP		TSSOP66,.46	RECTANGULAR	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	Obsolete		NOT SPECIFIED	5.82	Compliant	Yes				2.5 V						e6	Yes		Tin/Bismuth (Sn97Bi3)	70 °C	0 °C			DRAMs	CMOS	DUAL	GULL WING	260		0.635 mm	unknown	200 MHz			R-PDSO-G66	Not Qualified	2.6 V		2.5 V	COMMERCIAL					0.3 mA	550 ps		8 b	32MX8	3-STATE		8	15 b	256 Mb	0.004 A	268435456 bit	400 MHz			COMMON	DDR DRAM		8192	2,4,8	2,4,8					No	Lead Free
Mfr Part No K4H560838H-ZCCC	Samsung	Datasheet	-	-	Min: 1 Mult: 1			YES		60		200 MHz		SAMSUNG SEMICONDUCTOR INC		Samsung Semiconductor	K4H560838H-ZCCC							3				33554432 words	32000000	70 °C		PLASTIC/EPOXY	BGA	BGA, BGA60,9X12,40/32	BGA60,9X12,40/32	RECTANGULAR	GRID ARRAY	Obsolete		NOT SPECIFIED	5.84		Yes				2.6 V						e1	Yes		Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)					DRAMs	CMOS	BOTTOM	BALL	260		0.8 mm	unknown				R-PBGA-B60	Not Qualified			2.6 V	COMMERCIAL					0.3 mA				32MX8	3-STATE		8			0.004 A	268435456 bit				COMMON	DDR DRAM		8192	2,4,8	2,4,8
Mfr Part No IS61SF6432-9TQ	Integrated Silicon Solution Inc	Datasheet	-	-	Min: 1 Mult: 1			YES		100	9 ns	77 MHz		INTEGRATED SILICON SOLUTION INC														65536 words	64000	70 °C		PLASTIC/EPOXY	LQFP	TQFP-100	QFP100,.63X.87	RECTANGULAR	FLATPACK, LOW PROFILE	Obsolete	QFP				No				3.3 V						e0		3A991.B.2.A	Tin/Lead (Sn/Pb)			SELF-TIMED WRITE; BURST COUNTER; BYTE WRITE; LINEAR/INTERLEAVED BURST SEQUENCE	8542.32.00.41			QUAD	GULL WING		1	0.65 mm	unknown			100	R-PQFP-G100	Not Qualified		3.63 V		COMMERCIAL	3.135 V			SYNCHRONOUS	0.3 mA				64KX32	3-STATE	1.6 mm	32			0.01 A	2097152 bit			PARALLEL	COMMON	CACHE SRAM	3.14 V						20 mm	14 mm
Mfr Part No EDE5104AGSE-6E-E	Elpida Memory Inc	Datasheet	-	-	Min: 1 Mult: 1			YES		60	0.45 ns	333 MHz		ELPIDA MEMORY INC														134217728 words	128000000	85 °C		PLASTIC/EPOXY	TFBGA	TFBGA, BGA60,9X11,32	BGA60,9X11,32	RECTANGULAR	GRID ARRAY, THIN PROFILE, FINE PITCH	Obsolete	BGA				Yes				1.8 V						e1		EAR99	TIN SILVER COPPER			AUTO/SELF REFRESH	8542.32.00.28			BOTTOM	BALL		1	0.8 mm	unknown			60	R-PBGA-B60	Not Qualified		1.9 V		OTHER	1.7 V		1	SYNCHRONOUS	0.3 mA				128MX4	3-STATE	1.2 mm	4			0.01 A	536870912 bit				COMMON	DDR2 DRAM		8192	4,8	4,8	FOUR BANK PAGE BURST	YES	11.5 mm	11 mm
Mfr Part No TC55V4366FF-133	Toshiba America Electronic Components	Datasheet	-	-	Min: 1 Mult: 1			YES		100	4 ns	133 MHz		TOSHIBA CORP														131072 words	128000	70 °C		PLASTIC/EPOXY	LQFP	LQFP, QFP100,.63X.87	QFP100,.63X.87	RECTANGULAR	FLATPACK, LOW PROFILE	Obsolete	QFP								3.3 V						e0		3A991.B.2.A	TIN LEAD			PIPELINED ARCHITECTURE	8542.32.00.41			QUAD	GULL WING		1	0.65 mm	unknown			100	R-PQFP-G100	Not Qualified		3.6 V		COMMERCIAL	3.1 V			SYNCHRONOUS	0.3 mA				128KX36	3-STATE	1.7 mm	36			0.002 A	4718592 bit			PARALLEL	COMMON	CACHE SRAM	3.1 V						20 mm	14 mm
Mfr Part No IS61NLP25636A-250TQI	Integrated Silicon Solution Inc	Datasheet	-	-	Min: 1 Mult: 1			YES		100	2.6 ns	250 MHz		INTEGRATED SILICON SOLUTION INC														262144 words	256000	85 °C	-40 °C	PLASTIC/EPOXY	LQFP	TQFP-100	QFP100,.63X.87	RECTANGULAR	FLATPACK, LOW PROFILE	Obsolete	QFP				No				3.3 V						e0	No	3A991.B.2.A	TIN LEAD			PIPELINED ARCHITECTURE	8542.32.00.41			QUAD	GULL WING		1	0.65 mm	compliant			100	R-PQFP-G100	Not Qualified		3.465 V		INDUSTRIAL	3.135 V			SYNCHRONOUS	0.3 mA				256KX36	3-STATE	1.6 mm	36			0.05 A	9437184 bit			PARALLEL	COMMON	ZBT SRAM	3.14 V						20 mm	14 mm
Mfr Part No HY5PS561621BFP-16	SK Hynix Inc	Datasheet	-	-	Min: 1 Mult: 1			YES		84	0.25 ns	625 MHz		SK HYNIX INC														16777216 words	16000000	85 °C		PLASTIC/EPOXY	TFBGA	TFBGA, BGA84,9X15,32	BGA84,9X15,32	RECTANGULAR	GRID ARRAY, THIN PROFILE, FINE PITCH	Obsolete	BGA				Yes				2 V						e1		EAR99	TIN SILVER COPPER			AUTO/SELF REFRESH	8542.32.00.24			BOTTOM	BALL	260	1	0.8 mm	unknown		20	84	R-PBGA-B84	Not Qualified		2.1 V		OTHER	1.9 V		1	SYNCHRONOUS	0.3 mA				16MX16	3-STATE	1.2 mm	16			0.008 A	268435456 bit				COMMON	DDR2 DRAM		8192	4,8	4,8	FOUR BANK PAGE BURST	YES	13 mm	8 mm
Mfr Part No MCM69P536ATQ7	Freescale Semiconductor	Datasheet	-	-	Min: 1 Mult: 1			YES		100	7 ns			MOTOROLA SEMICONDUCTOR PRODUCTS														32768 words	32000			PLASTIC/EPOXY	QFP	QFP, QFP100,.63X.87	QFP100,.63X.87	RECTANGULAR	FLATPACK	Obsolete					No				3.3 V						e0			Tin/Lead (Sn/Pb)							QUAD	GULL WING			0.635 mm	unknown				R-PQFP-G100	Not Qualified			3.3 V					SYNCHRONOUS	0.3 mA				32KX36	3-STATE		36			0.045 A	1179648 bit			PARALLEL	COMMON	STANDARD SRAM	3.14 V
Mfr Part No EDS2532AABH-6B-E	Elpida Memory Inc	Datasheet	-	-	Min: 1 Mult: 1			YES		90	5.4 ns	166 MHz		ELPIDA MEMORY INC														8388608 words	8000000	70 °C		PLASTIC/EPOXY	TFBGA	TFBGA, BGA90,9X15,32	BGA90,9X15,32	RECTANGULAR	GRID ARRAY, THIN PROFILE, FINE PITCH	Obsolete	BGA				Yes				3.3 V						e1		EAR99	TIN SILVER COPPER			AUTO/SELF REFRESH	8542.32.00.24			BOTTOM	BALL		1	0.8 mm	unknown			90	R-PBGA-B90	Not Qualified		3.6 V		COMMERCIAL	3 V		1	SYNCHRONOUS	0.3 mA				8MX32		1.14 mm	32			0.002 A	268435456 bit				COMMON	SYNCHRONOUS DRAM		4096	1,2,4,8,FP	1,2,4,8	FOUR BANK PAGE BURST	YES	13 mm	8 mm
Mfr Part No HY57V121620T-H	SK Hynix Inc	Datasheet	7984 In Stock	-	Min: 1 Mult: 1			YES		54	5.4 ns	133 MHz		SK HYNIX INC														33554432 words	32000000	70 °C		PLASTIC/EPOXY	TSOP2	TSOP2, TSOP54,.46,32	TSOP54,.46,32	RECTANGULAR	SMALL OUTLINE, THIN PROFILE	Obsolete	TSOP2								3.3 V						e6		EAR99	TIN BISMUTH			AUTO/SELF REFRESH	8542.32.00.28			DUAL	GULL WING		1	0.8 mm	compliant			54	R-PDSO-G54	Not Qualified		3.6 V		COMMERCIAL	3 V		1	SYNCHRONOUS	0.3 mA				32MX16	3-STATE	1.2 mm	16			0.002 A	536870912 bit				COMMON	SYNCHRONOUS DRAM		8192	1,2,4,8,FP	1,2,4,8	FOUR BANK PAGE BURST	YES	22.22 mm	10.16 mm
Mfr Part No IS42R32160D-7BLI	Integrated Silicon Solution Inc	Datasheet	-	-	Min: 1 Mult: 1			YES		90	5.4 ns	143 MHz		INTEGRATED SILICON SOLUTION INC														16777216 words	16000000	85 °C	-40 °C	PLASTIC/EPOXY	TFBGA	TFBGA, BGA90,9X15,32	BGA90,9X15,32	RECTANGULAR	GRID ARRAY, THIN PROFILE, FINE PITCH	Active	DSBGA				Yes				2.5 V								EAR99				AUTO/SELF REFRESH	8542.32.00.28			BOTTOM	BALL		1	0.8 mm	compliant			90	R-PBGA-B90	Not Qualified		2.7 V		INDUSTRIAL	2.3 V		1	SYNCHRONOUS	0.3 mA				16MX32	3-STATE	1.2 mm	32			0.004 A	536870912 bit				COMMON	SYNCHRONOUS DRAM		8192	1,2,4,8,FP	1,2,4,8	FOUR BANK PAGE BURST	YES	13 mm	8 mm
Mfr Part No IBM041814PQKB-9	IBM	Datasheet	-	-	Min: 1 Mult: 1			YES		100	9 ns			IBM MICROELECTRONICS														65536 words	64000	70 °C		PLASTIC/EPOXY	LQFP	LQFP, QFP100,.63X.87	QFP100,.63X.87	RECTANGULAR	FLATPACK, LOW PROFILE	Obsolete	QFP								3.3 V								3A991.B.2.A					8542.32.00.41			QUAD	GULL WING		1	0.65 mm	unknown			100	R-PQFP-G100	Not Qualified		3.465 V		COMMERCIAL	3.135 V			SYNCHRONOUS	0.3 mA				64KX18	3-STATE	1.6 mm	18			0.025 A	1179648 bit			PARALLEL	COMMON	STANDARD SRAM	3.14 V						20 mm	14 mm
Mfr Part No IS46R32800F-6BLA1	Integrated Silicon Solution Inc	Datasheet	-	-	Min: 1 Mult: 1			YES		144	0.7 ns	166 MHz		INTEGRATED SILICON SOLUTION INC														8388608 words	8000000	85 °C	-40 °C	PLASTIC/EPOXY	LFBGA	LFBGA, BGA144,12X12,32	BGA144,12X12,32	SQUARE	GRID ARRAY, LOW PROFILE, FINE PITCH	Active									2.5 V								EAR99					8542.32.00.24			BOTTOM	BALL	260	1	0.8 mm	unknown				S-PBGA-B144			2.7 V		INDUSTRIAL	2.3 V		1	SYNCHRONOUS	0.3 mA				8MX32	3-STATE	1.4 mm	32			0.035 A	268435456 bit				COMMON	DDR1 DRAM			2,4,8	2,4,8	FOUR BANK PAGE BURST	YES	12 mm	12 mm
Mfr Part No IC61LV5128-8K	Integrated Silicon Solution Inc	Datasheet	-	-	Min: 1 Mult: 1			YES		36	8 ns			INTEGRATED SILICON SOLUTION INC														524288 words	512000	70 °C		PLASTIC/EPOXY	SOJ	0.400 INCH, SOJ-36	SOJ36,.44	RECTANGULAR	SMALL OUTLINE	Obsolete					No				3.3 V						e0		3A991.B.2.A	Tin/Lead (Sn/Pb)				8542.32.00.41			DUAL	J BEND		1	1.27 mm	compliant				R-PDSO-J36	Not Qualified		3.63 V		COMMERCIAL	2.97 V			ASYNCHRONOUS	0.3 mA				512KX8	3-STATE		8			0.01 A	4194304 bit			PARALLEL	COMMON	STANDARD SRAM	3 V

Memory (42)