The category is 'Memory'
Memory (42)
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- Supply Current-Max:
0.3 mA
Image | Part Number | Manufacturer | Datasheet | Availability | Pricing(USD) | Quantity | RoHS | Factory Lead Time | Mount | Mounting Type | Package / Case | Surface Mount | Number of Pins | Supplier Device Package | Number of Terminals | Access Time-Max | Base Product Number | Clock Frequency-Max (fCLK) | Data Rate Architecture | Ihs Manufacturer | Interface Type | Manufacturer | Manufacturer Part Number | Maximum Clock Frequency | Maximum Clock Rate | Maximum Operating Supply Voltage | Maximum Operating Temperature | Memory Types | Mfr | Minimum Operating Supply Voltage | Minimum Operating Temperature | Moisture Sensitivity Levels | Mounting | Mounting Styles | Number of I/O Lines | Number of Words | Number of Words Code | Operating Temperature-Max | Operating Temperature-Min | Package | Package Body Material | Package Code | Package Description | Package Equivalence Code | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Product Status | Reflow Temperature-Max (s) | Risk Rank | RoHS | Rohs Code | Supplier Package | Supply Voltage-Max | Supply Voltage-Min | Supply Voltage-Nom (Vsup) | Timing Type | Typical Operating Supply Voltage | Usage Level | Operating Temperature | Series | JESD-609 Code | Pbfree Code | ECCN Code | Terminal Finish | Max Operating Temperature | Min Operating Temperature | Additional Feature | HTS Code | Subcategory | Technology | Voltage - Supply | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Terminal Pitch | Reach Compliance Code | Frequency | Time@Peak Reflow Temperature-Max (s) | Pin Count | JESD-30 Code | Qualification Status | Operating Supply Voltage | Supply Voltage-Max (Vsup) | Power Supplies | Temperature Grade | Supply Voltage-Min (Vsup) | Max Supply Voltage | Min Supply Voltage | Memory Size | Number of Ports | Nominal Supply Current | Operating Mode | Clock Frequency | Supply Current-Max | Access Time | Memory Format | Memory Interface | Architecture | Organization | Output Characteristics | Seated Height-Max | Memory Width | Write Cycle Time - Word, Page | Address Bus Width | Density | Standby Current-Max | Memory Density | Screening Level | Parallel/Serial | I/O Type | Sync/Async | Word Size | Memory IC Type | Standby Voltage-Min | Output Enable | Refresh Cycles | Sequential Burst Length | Interleaved Burst Length | Access Mode | Self Refresh | Memory Organization | Length | Width | Radiation Hardening |
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 | Mfr Part No IDT7025S55JI | Integrated Device Technology (IDT) | Datasheet | - | - | Min: 1 Mult: 1 | YES | 84 | 55 ns | INTEGRATED DEVICE TECHNOLOGY INC | Integrated Device Technology Inc | IDT7025S55JI | 1 | 8192 words | 8000 | 85 °C | -40 °C | PLASTIC/EPOXY | QCCJ | PLASTIC, LCC-84 | LDCC84,1.2SQ | SQUARE | CHIP CARRIER | Obsolete | LCC | 20 | 5.07 | No | 5 V | e0 | No | EAR99 | Tin/Lead (Sn85Pb15) | BATTERY BACK UP | 8542.32.00.41 | SRAMs | CMOS | QUAD | J BEND | 225 | 1 | 1.27 mm | not_compliant | 84 | S-PQCC-J84 | Not Qualified | 5.5 V | 5 V | INDUSTRIAL | 4.5 V | 2 | ASYNCHRONOUS | 0.3 mA | 8KX16 | 3-STATE | 4.57 mm | 16 | 0.03 A | 131072 bit | PARALLEL | COMMON | DUAL-PORT SRAM | 4.5 V | 29.3116 mm | 29.3116 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr Part No IS61LV25616-10KI | Integrated Silicon Solution Inc | Datasheet | - | - | Min: 1 Mult: 1 | YES | 44 | 10 ns | INTEGRATED SILICON SOLUTION INC | 262144 words | 256000 | 85 °C | -40 °C | PLASTIC/EPOXY | SOJ | 0.400 INCH, SOJ-44 | SOJ44,.44 | RECTANGULAR | SMALL OUTLINE | Obsolete | SOJ | No | 3.3 V | e0 | No | 3A991.B.2.A | TIN LEAD | TTL COMPATIBLE INTERFACE LEVELS | 8542.32.00.41 | DUAL | J BEND | 1 | 1.27 mm | compliant | 44 | R-PDSO-J44 | Not Qualified | 3.63 V | INDUSTRIAL | 3.135 V | ASYNCHRONOUS | 0.3 mA | 256KX16 | 3-STATE | 3.76 mm | 16 | 0.015 A | 4194304 bit | PARALLEL | COMMON | STANDARD SRAM | 3.14 V | 28.58 mm | 10.16 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr Part No CY7C1372DV25-200BZC | Cypress Semiconductor | Datasheet | - | - | Min: 1 Mult: 1 | YES | 165 | 3 ns | 200 MHz | CYPRESS SEMICONDUCTOR CORP | 3 | 1048576 words | 1000000 | 70 °C | PLASTIC/EPOXY | LBGA | 13 X 15 MM, 1.40 MM HEIGHT, MO-216, FBGA-165 | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | Obsolete | BGA | No | 2.5 V | e0 | 3A991.B.2.A | Tin/Lead (Sn/Pb) | PIPELINED ARCHITECTURE | 8542.32.00.41 | BOTTOM | BALL | NOT SPECIFIED | 1 | 1 mm | not_compliant | NOT SPECIFIED | 165 | R-PBGA-B165 | Not Qualified | 2.625 V | COMMERCIAL | 2.375 V | SYNCHRONOUS | 0.3 mA | 1MX18 | 3-STATE | 1.4 mm | 18 | 0.07 A | 18874368 bit | PARALLEL | COMMON | ZBT SRAM | 2.38 V | 15 mm | 13 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No IS61SF6432-10PQI | Integrated Circuit Solution Inc | Datasheet | - | - | Min: 1 Mult: 1 | YES | 100 | 10 ns | 66 MHz | INTEGRATED CIRCUIT SOLUTION INC | 65536 words | 64000 | 85 °C | -40 °C | PLASTIC/EPOXY | QFP | QFP, QFP100,.7X.9 | QFP100,.7X.9 | RECTANGULAR | FLATPACK | Transferred | No | 3.3 V | e0 | 3A991.B.2.A | Tin/Lead (Sn/Pb) | 8542.32.00.41 | QUAD | GULL WING | 0.635 mm | unknown | R-PQFP-G100 | Not Qualified | INDUSTRIAL | SYNCHRONOUS | 0.3 mA | 64KX32 | 3-STATE | 32 | 0.02 A | 2097152 bit | PARALLEL | COMMON | STANDARD SRAM | 3.14 V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr Part No IS61SF6432-10PQI | Integrated Silicon Solution Inc | Datasheet | - | - | Min: 1 Mult: 1 | YES | 100 | 10 ns | 66 MHz | INTEGRATED SILICON SOLUTION INC | 65536 words | 64000 | 85 °C | -40 °C | PLASTIC/EPOXY | LQFP | PLASTIC, QFP-100 | QFP100,.7X.9 | RECTANGULAR | FLATPACK, LOW PROFILE | Obsolete | QFP | No | 3.3 V | e0 | 3A991.B.2.A | Tin/Lead (Sn/Pb) | SELF-TIMED WRITE; BURST COUNTER; BYTE WRITE; LINEAR/INTERLEAVED BURST SEQUENCE | 8542.32.00.41 | QUAD | GULL WING | 1 | 0.65 mm | unknown | 100 | R-PQFP-G100 | Not Qualified | 3.63 V | INDUSTRIAL | 3.135 V | SYNCHRONOUS | 0.3 mA | 64KX32 | 3-STATE | 1.6 mm | 32 | 0.02 A | 2097152 bit | PARALLEL | COMMON | CACHE SRAM | 3.14 V | 20 mm | 14 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No IS61SF6432-9TQ | Integrated Circuit Solution Inc | Datasheet | - | - | Min: 1 Mult: 1 | YES | 100 | 9 ns | 76.9 MHz | INTEGRATED CIRCUIT SOLUTION INC | 65536 words | 64000 | 70 °C | PLASTIC/EPOXY | QFP | QFP, QFP100,.63X.87 | QFP100,.63X.87 | RECTANGULAR | FLATPACK | Transferred | No | 3.3 V | e0 | 3A991.B.2.A | Tin/Lead (Sn/Pb) | 8542.32.00.41 | QUAD | GULL WING | 0.635 mm | unknown | R-PQFP-G100 | Not Qualified | COMMERCIAL | SYNCHRONOUS | 0.3 mA | 64KX32 | 3-STATE | 32 | 0.01 A | 2097152 bit | PARALLEL | COMMON | STANDARD SRAM | 3.14 V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr Part No HY5DS283222BFP-36 | SK Hynix Inc | Datasheet | - | - | Min: 1 Mult: 1 | YES | 144 | 0.6 ns | 277 MHz | SK HYNIX INC | 4194304 words | 4000000 | 70 °C | PLASTIC/EPOXY | LFBGA | LFBGA, BGA144,12X12,32 | BGA144,12X12,32 | SQUARE | GRID ARRAY, LOW PROFILE, FINE PITCH | Obsolete | BGA | Yes | 1.8 V | e1 | EAR99 | TIN SILVER COPPER | AUTO/SELF REFRESH | 8542.32.00.02 | BOTTOM | BALL | 1 | 0.8 mm | unknown | 144 | S-PBGA-B144 | Not Qualified | 2.1 V | COMMERCIAL | 1.75 V | 1 | SYNCHRONOUS | 0.3 mA | 4MX32 | 3-STATE | 1.21 mm | 32 | 0.025 A | 134217728 bit | COMMON | DDR1 DRAM | 4096 | 2,4,8 | 2,4,8 | FOUR BANK PAGE BURST | YES | 12 mm | 12 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No IDT71V3548S133PF | Integrated Device Technology Inc | Datasheet | - | - | Min: 1 Mult: 1 | YES | 100 | 4.2 ns | 133 MHz | INTEGRATED DEVICE TECHNOLOGY INC | 3 | 262144 words | 256000 | 70 °C | PLASTIC/EPOXY | LQFP | 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100 | QFP100,.63X.87 | RECTANGULAR | FLATPACK, LOW PROFILE | Obsolete | QFP | No | 3.3 V | e0 | 3A991.B.2.A | Tin/Lead (Sn85Pb15) | PIPELINED ARCHITECTURE | 8542.32.00.41 | QUAD | GULL WING | 225 | 1 | 0.65 mm | not_compliant | 20 | 100 | R-PQFP-G100 | Not Qualified | 3.465 V | COMMERCIAL | 3.135 V | SYNCHRONOUS | 0.3 mA | 256KX18 | 3-STATE | 1.6 mm | 18 | 0.04 A | 4718592 bit | PARALLEL | COMMON | ZBT SRAM | 3.14 V | 20 mm | 14 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No 71V2546S133PF | Integrated Device Technology Inc | Datasheet | - | - | Min: 1 Mult: 1 | YES | 100 | 4.2 ns | 133 MHz | INTEGRATED DEVICE TECHNOLOGY INC | 3 | 131072 words | 128000 | 70 °C | -40 °C | PLASTIC/EPOXY | LQFP | 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, MO-136DJ, TQFP-100 | QFP100,.63X.87 | RECTANGULAR | FLATPACK, LOW PROFILE | Obsolete | QFP | No | 3.3 V | e0 | 3A991.B.2.A | TIN LEAD | PIPELINED ARCHITECTURE | 8542.32.00.41 | QUAD | GULL WING | 225 | 1 | 0.65 mm | not_compliant | 20 | 100 | R-PQFP-G100 | Not Qualified | 3.465 V | OTHER | 3.135 V | SYNCHRONOUS | 0.3 mA | 128KX36 | 3-STATE | 1.6 mm | 36 | 0.04 A | 4718592 bit | PARALLEL | COMMON | ZBT SRAM | 3.14 V | 20 mm | 14 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr Part No IS42R32160D-7BL | Integrated Silicon Solution Inc | Datasheet | - | - | Min: 1 Mult: 1 | YES | 90 | 5.4 ns | 143 MHz | INTEGRATED SILICON SOLUTION INC | 16777216 words | 16000000 | 70 °C | PLASTIC/EPOXY | TFBGA | TFBGA, BGA90,9X15,32 | BGA90,9X15,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Active | DSBGA | Yes | 2.5 V | EAR99 | AUTO/SELF REFRESH | 8542.32.00.28 | BOTTOM | BALL | 1 | 0.8 mm | compliant | 90 | R-PBGA-B90 | Not Qualified | 2.7 V | COMMERCIAL | 2.3 V | 1 | SYNCHRONOUS | 0.3 mA | 16MX32 | 3-STATE | 1.2 mm | 32 | 0.004 A | 536870912 bit | COMMON | SYNCHRONOUS DRAM | 8192 | 1,2,4,8,FP | 1,2,4,8 | FOUR BANK PAGE BURST | YES | 13 mm | 8 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No IC61LV5128-8K | Integrated Circuit Solution Inc | Datasheet | - | - | Min: 1 Mult: 1 | YES | 36 | 8 ns | INTEGRATED CIRCUIT SOLUTION INC | 524288 words | 512000 | 70 °C | PLASTIC/EPOXY | SOJ | SOJ, SOJ36,.44 | SOJ36,.44 | RECTANGULAR | SMALL OUTLINE | Transferred | No | 3.3 V | e0 | 3A991.B.2.A | Tin/Lead (Sn/Pb) | 8542.32.00.41 | DUAL | J BEND | 1.27 mm | unknown | R-PDSO-J36 | Not Qualified | COMMERCIAL | ASYNCHRONOUS | 0.3 mA | 512KX8 | 3-STATE | 8 | 0.01 A | 4194304 bit | PARALLEL | COMMON | STANDARD SRAM | 3 V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No IDT7005S55JB | Integrated Device Technology Inc | Datasheet | - | - | Min: 1 Mult: 1 | YES | 68 | 55 ns | INTEGRATED DEVICE TECHNOLOGY INC | 1 | 8192 words | 8000 | 125 °C | -55 °C | PLASTIC/EPOXY | QCCJ | QCCJ, LDCC68,1.0SQ | LDCC68,1.0SQ | SQUARE | CHIP CARRIER | Transferred | LCC | No | 5 V | e0 | No | 3A001.A.2.C | TIN LEAD | 8542.32.00.41 | QUAD | J BEND | 225 | 1 | 1.27 mm | not_compliant | 20 | 68 | S-PQCC-J68 | Not Qualified | 5.5 V | MILITARY | 4.5 V | 2 | ASYNCHRONOUS | 0.3 mA | 8KX8 | 3-STATE | 4.572 mm | 8 | 0.03 A | 65536 bit | PARALLEL | COMMON | MULTI-PORT SRAM | 4.5 V | 24.2062 mm | 24.2062 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No IS46R32400E-6BLA1 | Integrated Silicon Solution Inc | Datasheet | - | - | Min: 1 Mult: 1 | YES | 144 | 0.7 ns | 167 MHz | INTEGRATED SILICON SOLUTION INC | 4194304 words | 4000000 | 85 °C | -40 °C | PLASTIC/EPOXY | LFBGA | LFBGA, BGA144,12X12,32 | BGA144,12X12,32 | SQUARE | GRID ARRAY, LOW PROFILE, FINE PITCH | Active | Yes | 2.5 V | EAR99 | AUTO/SELF REFRESH | 8542.32.00.02 | BOTTOM | BALL | 1 | 0.8 mm | compliant | S-PBGA-B144 | Not Qualified | 2.7 V | INDUSTRIAL | 2.3 V | 1 | SYNCHRONOUS | 0.3 mA | 4MX32 | 3-STATE | 1.4 mm | 32 | 0.005 A | 134217728 bit | AEC-Q100 | COMMON | DDR1 DRAM | 4096 | 2,4,8 | 2,4,8 | FOUR BANK PAGE BURST | YES | 12 mm | 12 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No IS61C12816-12TI | Integrated Silicon Solution Inc | Datasheet | - | - | Min: 1 Mult: 1 | YES | 44 | 12 ns | INTEGRATED SILICON SOLUTION INC | 131072 words | 128000 | 85 °C | -40 °C | PLASTIC/EPOXY | TSOP2 | PLASTIC, TSOP2-44 | TSOP44,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | TSOP2 | No | 5 V | e0 | 3A991.B.2.A | TIN LEAD | CONFIGURABLE AS 128K X 16 | 8542.32.00.41 | DUAL | GULL WING | 1 | 0.8 mm | compliant | 44 | R-PDSO-G44 | Not Qualified | 5.25 V | INDUSTRIAL | 4.75 V | ASYNCHRONOUS | 0.3 mA | 128KX16 | 3-STATE | 1.2 mm | 16 | 0.000015 A | 2097152 bit | PARALLEL | COMMON | STANDARD SRAM | 4.75 V | 18.41 mm | 10.16 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No MCM69P536ATQ7 | Motorola Mobility LLC | Datasheet | - | - | Min: 1 Mult: 1 | YES | 100 | 7 ns | MOTOROLA INC | 32768 words | 32000 | 110 °C | 20 °C | PLASTIC/EPOXY | LQFP | LQFP, QFP100,.63X.87 | QFP100,.63X.87 | RECTANGULAR | FLATPACK, LOW PROFILE | Obsolete | QFP | No | 3.3 V | e0 | No | 3A991.B.2.A | TIN LEAD | BURST COUNTER | 8542.32.00.41 | QUAD | GULL WING | 1 | 0.65 mm | unknown | 100 | R-PQFP-G100 | Not Qualified | 3.6 V | OTHER | 3.135 V | 1 | SYNCHRONOUS | 0.3 mA | 32KX36 | 3-STATE | 1.6 mm | 36 | 0.045 A | 1179648 bit | PARALLEL | COMMON | CACHE SRAM | 3.14 V | YES | 20 mm | 14 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No CY7C1370C-200BZI | Cypress Semiconductor | Datasheet | - | - | Min: 1 Mult: 1 | Surface Mount | YES | 165 | 165 | 3 ns | 200 MHz | CYPRESS SEMICONDUCTOR CORP | Cypress Semiconductor | CY7C1370C-200BZI | 3 | 512000 | 512000 | 85 °C | -40 °C | PLASTIC/EPOXY | TBGA | TBGA, BGA165,11X15,40 | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, THIN PROFILE | Obsolete | BGA | NOT SPECIFIED | 5.69 | Compliant | No | 3.3 V | e0 | 3A991.B.2.A | Tin/Lead (Sn/Pb) | 85 °C | -40 °C | PIPELINED ARCHITECTURE | 8542.32.00.41 | SRAMs | CMOS | BOTTOM | BALL | 220 | 1 | 1 mm | not_compliant | 200 MHz | 165 | R-PBGA-B165 | Not Qualified | 3.3 V | 3.63 V | 2.5/3.3,3.3 V | INDUSTRIAL | 3.135 V | 3.465 V | 3.135 V | 1 | 300 mA | SYNCHRONOUS | 0.3 mA | 3 ns | 512KX36 | 3-STATE | 1.2 mm | 36 | 19 b | 18 Mb | 0.06 A | 18874368 bit | PARALLEL | COMMON | Synchronous | 36 b | ZBT SRAM | 3.14 V | 15 mm | 13 mm | No | ||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No GS832272C-166I | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 8 Weeks | BGA-209 | YES | 209 | 8 ns | 166 MHz | SDR | GSI TECHNOLOGY | Parallel | GSI Technology | GS832272C-166I | 166 MHz | 125@Flow-Through/166@Pipelined MHz | 2.7, 3.6 V | + 85 C | 2.3, 3 V | - 40 C | 3 | Surface Mount | SMD/SMT | 72 Bit | 512 kWords | 512000 | 85 °C | -40 °C | PLASTIC/EPOXY | LBGA | LBGA, BGA209,11X19,40 | BGA209,11X19,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | Active | BGA | NOT SPECIFIED | 5.14 | Compliant | No | FBGA | 3.6 V | 2.3 V | 2.5 V | Synchronous | 2.5, 3.3 V | Industrial grade | -40 to 85 °C | GS832272C | No | 3A991.B.2.B | 85 °C | -40 °C | FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY | 8542.32.00.41 | SRAMs | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 1 mm | compliant | 209 | R-PBGA-B209 | Not Qualified | 2.7 V | 2.5/3.3 V | INDUSTRIAL | 2.3 V | 36 Mbit | 8 | SYNCHRONOUS | 0.3 mA | 8 ns | Flow-Through/Pipelined | 512KX72 | 3-STATE | 1.7 mm | 72 | 19 Bit | 36 Mbit | 0.08 A | 37748736 bit | Industrial | PARALLEL | COMMON | CACHE SRAM | 2.38 V | 22 mm | 14 mm | No | ||||||||||||||||||||||||||||||||
| Mfr Part No CY7C0851AV-167BBC | Cypress Semiconductor | Datasheet | 2368 |
| Min: 1 Mult: 1 | 1 Week | Surface Mount | 172-LBGA | YES | 172-FBGA (15x15) | 172 | 4 ns | CY7C0851 | 167 MHz | CYPRESS SEMICONDUCTOR CORP | Cypress Semiconductor | CY7C0851AV-167BBC | Volatile | Cypress Semiconductor Corp | 3 | 65536 words | 64000 | 70 °C | Bulk | PLASTIC/EPOXY | LBGA | 15 X 15 MM, 1.25 MM HEIGHT, 1 MM PITCH, FBGA-172 | BGA172,14X14,40 | SQUARE | GRID ARRAY, LOW PROFILE | Active | BGA | Active | 30 | 5.63 | No | 3.3 V | 0°C ~ 70°C (TA) | - | e0 | No | 3A991.B.2.A | Tin/Lead (Sn/Pb) | PIPELINED ARCHITECTURE | 8542.32.00.41 | SRAMs | SRAM - Dual Port, Synchronous | 3.135V ~ 3.465V | BOTTOM | BALL | 240 | 1 | 1 mm | compliant | 172 | S-PBGA-B172 | Not Qualified | 3.465 V | 3.3 V | COMMERCIAL | 3.135 V | 2Mbit | 2 | SYNCHRONOUS | 167 MHz | 0.3 mA | SRAM | Parallel | 64KX36 | 3-STATE | 1.25 mm | 36 | - | 0.075 A | 2359296 bit | PARALLEL | COMMON | DUAL-PORT SRAM | 3.14 V | 64K x 36 | 15 mm | 15 mm | ||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No MT47H128M8BT3:A | Micron | Datasheet | - | - | Min: 1 Mult: 1 | YES | 92 | 0.45 ns | 333 MHz | MICRON TECHNOLOGY INC | Micron Technology Inc | MT47H128M8BT-3:A | 134217728 words | 128000000 | 85 °C | PLASTIC/EPOXY | TFBGA | TFBGA, BGA92,9X21,32 | BGA92,9X21,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | BGA | 30 | 5.59 | Yes | 1.8 V | e1 | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | AUTO/SELF REFRESH | 8542.32.00.32 | DRAMs | CMOS | BOTTOM | BALL | 260 | 1 | 0.8 mm | unknown | 92 | R-PBGA-B92 | Not Qualified | 1.9 V | 1.8 V | OTHER | 1.7 V | 1 | SYNCHRONOUS | 0.3 mA | 128MX8 | 3-STATE | 1.2 mm | 8 | 1073741824 bit | COMMON | DDR DRAM | 8192 | 4,8 | 4,8 | MULTI BANK PAGE BURST | YES | 19 mm | 11 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No CY7C1370C-200BGC | Cypress Semiconductor | Datasheet | - | - | Min: 1 Mult: 1 | YES | 119 | 3 ns | 200 MHz | CYPRESS SEMICONDUCTOR CORP | Cypress Semiconductor | CY7C1370C-200BGC | 3 | 524288 words | 512000 | 70 °C | PLASTIC/EPOXY | BGA | 14 X 22 MM, 2.40 MM HEIGHT, PLASTIC, BGA-119 | BGA119,7X17,50 | RECTANGULAR | GRID ARRAY | Obsolete | BGA | NOT SPECIFIED | 5.74 | No | 3.3 V | e0 | 3A991.B.2.A | Tin/Lead (Sn/Pb) | PIPELINED ARCHITECTURE | 8542.32.00.41 | SRAMs | CMOS | BOTTOM | BALL | 220 | 1 | 1.27 mm | not_compliant | 119 | R-PBGA-B119 | Not Qualified | 3.63 V | 2.5/3.3,3.3 V | COMMERCIAL | 3.135 V | SYNCHRONOUS | 0.3 mA | 512KX36 | 3-STATE | 2.4 mm | 36 | 0.06 A | 18874368 bit | PARALLEL | COMMON | ZBT SRAM | 3.14 V | 22 mm | 14 mm |
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IDT7025S55JI
Integrated Device Technology (IDT)
Package:Memory
Price: please inquire
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IS61LV25616-10KI
Integrated Silicon Solution Inc
Package:Memory
Price: please inquire
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CY7C1372DV25-200BZC
Cypress Semiconductor
Package:Memory
Price: please inquire
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IS61SF6432-10PQI
Integrated Circuit Solution Inc
Package:Memory
Price: please inquire
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IS61SF6432-10PQI
Integrated Silicon Solution Inc
Package:Memory
Price: please inquire
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IS61SF6432-9TQ
Integrated Circuit Solution Inc
Package:Memory
Price: please inquire
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HY5DS283222BFP-36
SK Hynix Inc
Package:Memory
Price: please inquire
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IDT71V3548S133PF
Integrated Device Technology Inc
Package:Memory
Price: please inquire
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71V2546S133PF
Integrated Device Technology Inc
Package:Memory
Price: please inquire
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IS42R32160D-7BL
Integrated Silicon Solution Inc
Package:Memory
Price: please inquire
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IC61LV5128-8K
Integrated Circuit Solution Inc
Package:Memory
Price: please inquire
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IDT7005S55JB
Integrated Device Technology Inc
Package:Memory
Price: please inquire
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IS46R32400E-6BLA1
Integrated Silicon Solution Inc
Package:Memory
Price: please inquire
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IS61C12816-12TI
Integrated Silicon Solution Inc
Package:Memory
Price: please inquire
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MCM69P536ATQ7
Motorola Mobility LLC
Package:Memory
Price: please inquire
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CY7C1370C-200BZI
Cypress Semiconductor
Package:Memory
Price: please inquire
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GS832272C-166I
GSI Technology
Package:Memory
Price: please inquire
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CY7C0851AV-167BBC
Cypress Semiconductor
Package:Memory
172.237867
-
MT47H128M8BT3:A
Micron
Package:Memory
Price: please inquire
-
CY7C1370C-200BGC
Cypress Semiconductor
Package:Memory
Price: please inquire