The category is 'Memory'
Memory (4)
- All Manufacturers
- Access Time-Max
- Additional Feature
- ECCN Code
- HTS Code
- I/O Type
- Ihs Manufacturer
- JESD-30 Code
- JESD-609 Code
- Length
- Memory Density
- Memory Width
- Supply Current-Max
- Supply Current-Max:
0.305 mA
Image | Part Number | Manufacturer | Datasheet | Availability | Pricing(USD) | Quantity | RoHS | Surface Mount | Number of Terminals | Access Time-Max | Clock Frequency-Max (fCLK) | Ihs Manufacturer | Manufacturer | Manufacturer Part Number | Memory Types | Moisture Sensitivity Levels | Number of Words | Number of Words Code | Operating Temperature-Max | Package Body Material | Package Code | Package Description | Package Equivalence Code | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Reflow Temperature-Max (s) | Risk Rank | RoHS | Rohs Code | Supply Voltage-Nom (Vsup) | JESD-609 Code | Pbfree Code | ECCN Code | Terminal Finish | Max Operating Temperature | Min Operating Temperature | Additional Feature | HTS Code | Subcategory | Technology | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Terminal Pitch | Reach Compliance Code | Time@Peak Reflow Temperature-Max (s) | Pin Count | JESD-30 Code | Qualification Status | Supply Voltage-Max (Vsup) | Power Supplies | Temperature Grade | Supply Voltage-Min (Vsup) | Interface | Number of Ports | Operating Mode | Supply Current-Max | Organization | Output Characteristics | Seated Height-Max | Memory Width | Standby Current-Max | Memory Density | Parallel/Serial | I/O Type | Memory IC Type | Standby Voltage-Min | Output Enable | Refresh Cycles | Sequential Burst Length | Interleaved Burst Length | Access Mode | Self Refresh | Length | Width |
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 | Mfr Part No IDT7007S25PF | Renesas | Datasheet | - | - | Min: 1 Mult: 1 | YES | 80 | 25 ns | INTEGRATED DEVICE TECHNOLOGY INC | Integrated Device Technology Inc | IDT7007S25PF | RAM, SRAM | 3 | 32768 words | 32000 | 70 °C | PLASTIC/EPOXY | LQFP | 14 X 14 MM, 1.40 MM HEIGHT, TQFP-80 | QFP80,.64SQ | SQUARE | FLATPACK, LOW PROFILE | Obsolete | QFP | 20 | 7.68 | Non-Compliant | No | 5 V | e0 | No | EAR99 | Tin/Lead (Sn85Pb15) | 70 °C | 0 °C | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN | 8542.32.00.41 | SRAMs | CMOS | QUAD | GULL WING | 240 | 1 | 0.65 mm | not_compliant | 80 | S-PQFP-G80 | Not Qualified | 5.5 V | 5 V | COMMERCIAL | 4.5 V | Parallel | 2 | ASYNCHRONOUS | 0.305 mA | 32KX8 | 3-STATE | 1.6 mm | 8 | 0.015 A | 262144 bit | PARALLEL | COMMON | DUAL-PORT SRAM | 4.5 V | YES | 14 mm | 14 mm | ||||||||
| Mfr Part No H5PS2G83AFR-S5 | SK Hynix Inc | Datasheet | - | - | Min: 1 Mult: 1 | YES | 60 | 0.4 ns | 400 MHz | SK HYNIX INC | 268435456 words | 256000000 | 85 °C | PLASTIC/EPOXY | TFBGA | TFBGA, BGA60,9X11,32 | BGA60,9X11,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | BGA | Yes | 1.8 V | e1 | EAR99 | Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5) | AUTO/SELF REFRESH | 8542.32.00.36 | BOTTOM | BALL | 260 | 1 | 0.8 mm | unknown | 20 | 60 | R-PBGA-B60 | Not Qualified | 1.9 V | OTHER | 1.7 V | 1 | SYNCHRONOUS | 0.305 mA | 256MX8 | 3-STATE | 1.2 mm | 8 | 0.012 A | 2147483648 bit | COMMON | DDR2 DRAM | 8192 | 4,8 | 4,8 | MULTI BANK PAGE BURST | YES | 11 mm | 9.5 mm | ||||||||||||||||||
 | Mfr Part No IS61NF12836-8.5TQ | Integrated Silicon Solution Inc | Datasheet | - | - | Min: 1 Mult: 1 | YES | 100 | 8.5 ns | 100 MHz | INTEGRATED SILICON SOLUTION INC | 131072 words | 128000 | 70 °C | PLASTIC/EPOXY | LQFP | TQFP-100 | QFP100,.63X.87 | RECTANGULAR | FLATPACK, LOW PROFILE | Obsolete | QFP | No | 3.3 V | e0 | No | 3A991.B.2.A | TIN LEAD | FLOW-THROUGH ARCHITECTURE | 8542.32.00.41 | QUAD | GULL WING | 1 | 0.65 mm | compliant | 100 | R-PQFP-G100 | Not Qualified | 3.465 V | COMMERCIAL | 3.135 V | SYNCHRONOUS | 0.305 mA | 128KX36 | 3-STATE | 1.6 mm | 36 | 0.01 A | 4718592 bit | PARALLEL | COMMON | ZBT SRAM | 3.14 V | 20 mm | 14 mm | |||||||||||||||||||||||
| Mfr Part No GS816036BGT-250 | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | YES | 100 | 5.5 ns | 250 MHz | GSI TECHNOLOGY | GSI Technology | GS816036BGT-250 | 3 | 524288 words | 512000 | 70 °C | PLASTIC/EPOXY | LQFP | LQFP, QFP100,.63X.87 | QFP100,.63X.87 | RECTANGULAR | FLATPACK, LOW PROFILE | Obsolete | QFP | NOT SPECIFIED | 5.67 | Yes | 2.5 V | e3 | Yes | 3A991.B.2.B | PURE MATTE TIN | FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY | 8542.32.00.41 | SRAMs | CMOS | QUAD | GULL WING | 260 | 1 | 0.65 mm | compliant | 100 | R-PQFP-G100 | Not Qualified | 2.7 V | 2.5/3.3 V | COMMERCIAL | 2.3 V | SYNCHRONOUS | 0.305 mA | 512KX36 | 3-STATE | 1.6 mm | 36 | 0.04 A | 18874368 bit | PARALLEL | COMMON | CACHE SRAM | 2.3 V | 20 mm | 14 mm |